JP2001330861A5 - - Google Patents

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JP2001330861A5
JP2001330861A5 JP2001070364A JP2001070364A JP2001330861A5 JP 2001330861 A5 JP2001330861 A5 JP 2001330861A5 JP 2001070364 A JP2001070364 A JP 2001070364A JP 2001070364 A JP2001070364 A JP 2001070364A JP 2001330861 A5 JP2001330861 A5 JP 2001330861A5
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electro
optical device
scanning line
substrate
thin film
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【発明の名称】電気光学装置及びプロジェクタPatent application title: Electro-optical device and projector

Claims (15)

一対の第１及び第２基板間に電気光学物質が挟持されてなり、該第１基板上に、
マトリクス状に配置された画素電極と、
該画素電極を駆動する薄膜トランジスタと、
該薄膜トランジスタに接続されており相交差するデータ線及び走査線と
を備えており、
前記薄膜トランジスタを構成する半導体層の少なくともチャネル領域は、前記データ線と前記走査線とが交差する平面領域内に配置され、
前記データ線は、遮光性の材料からなり、前記少なくともチャネル領域を前記第２基板の側から見て覆うと共に前記走査線に交わる方向に伸びる主配線部と、前記チャネル領域毎に前記走査線に沿って突出する突出部とを有することを特徴とする電気光学装置。An electro-optical material is sandwiched between a pair of first and second substrates, and on the first substrate,
Pixel electrodes arranged in a matrix,
A thin film transistor for driving the pixel electrode;
Data lines and scanning lines connected to the thin film transistor and intersecting each other;
At least a channel region of a semiconductor layer constituting the thin film transistor is disposed in a planar region where the data line and the scanning line intersect.
The data line is made of a light shielding material, covers at least the channel region as viewed from the second substrate side, and extends in a direction intersecting the scanning line, and the scanning line for each channel region. An electro-optical device comprising: a protruding portion protruding along the same. 前記走査線は、平面的に見て前記走査線に交わる方向に相隣接する画素電極間の間隙に設けられており、
前記突出部は、平面的に見て前記間隙内に突出していることを特徴とする請求項１に記載の電気光学装置。The scan line is provided in a gap between adjacent pixel electrodes in a direction intersecting the scan line in a plan view.
The electro-optical device according to claim 1, wherein the protrusion protrudes in the gap in a plan view. 前記走査線は、ポリシリコン膜からなり、前記データ線は、金属を含有した導電性の遮光膜からなることを特徴とする請求項１又は２に記載の電気光学装置。3. The electro-optical device according to claim 1, wherein the scanning line is formed of a polysilicon film, and the data line is formed of a conductive light shielding film containing a metal. 前記データ線は、前記チャネル領域に加えて当該チャネル領域に隣接する前記半導体層のチャネル隣接領域を覆うことを特徴とする請求項１から３のいずれか一項に記載の電気光学装置。The electro-optical device according to any one of claims 1 to 3, wherein the data line covers a channel adjacent region of the semiconductor layer adjacent to the channel region in addition to the channel region. 前記薄膜トランジスタはＬＤＤ（Lightly Doped Drain）構造あるいはオフセット構造を備えた薄膜トランジスタからなり、前記チャネル隣接領域は、ＬＤＤ領域あるいはオフセット領域を含むことを特徴とする請求項４に記載の電気光学装置。5. The electro-optical device according to claim 4, wherein the thin film transistor is a thin film transistor having a lightly doped drain (LDD) structure or an offset structure, and the channel adjacent region includes an LDD region or an offset region. 一対の第１及び第２基板間に電気光学物質が挟持されてなり、
該第１基板上に、マトリクス状に配置された画素電極と、該画素電極を駆動する薄膜トランジスタと、該薄膜トランジスタに接続されており相交差するデータ線及び走査線とを備えており、
前記第２基板上に、前記画素電極と対向する対向電極を備えており、
前記データ線は、前記走査線に交わる方向に伸びる主配線部と、該主配線部から前記走査線に沿って突出する突出部とを有し、
前記画素電極の下地面は、前記突出部上と比べて前記主配線部上で平坦化されており且つ前記主配線部上と比べて前記突出部上で盛り上がっており、
前記画素電極及び前記対向電極は、前記走査線に沿って配列された画素電極群毎に反転駆動されることを特徴とする電気光学装置。An electro-optical material is sandwiched between a pair of first and second substrates,
The first substrate comprises pixel electrodes arranged in a matrix, thin film transistors for driving the pixel electrodes, and data lines and scanning lines connected to the thin film transistors and intersecting each other.
A counter electrode facing the pixel electrode is provided on the second substrate,
The data line has a main wiring portion extending in a direction intersecting the scanning line, and a protrusion protruding from the main wiring portion along the scanning line.
The lower ground of the pixel electrode is planarized on the main wiring portion compared to the protrusion, and raised on the protrusion compared to the main wiring portion.
2. The electro-optical device according to claim 1, wherein the pixel electrode and the counter electrode are reversely driven for each pixel electrode group arranged along the scanning line. 前記突出部は、平面的に見て相隣接する画素電極間においてその半分以上を占めるように配置されていることを特徴とする請求項６に記載の電気光学装置。7. The electro-optical device according to claim 6, wherein the projecting portion is arranged to occupy half or more of the adjacent pixel electrodes in plan view. 前記第１基板並びに前記薄膜トランジスタを構成する半導体層、前記走査線及び前記データ線をなす各層の間に夫々介在する層間絶縁膜を更に備えており、
前記層間絶縁膜及び前記第１基板のうち少なくとも一方には、前記主配線部に対向する位置に溝が形成されており、
前記突出部に対向する位置には前記溝が形成されていないことを特徴とする請求項６又は７に記載の電気光学装置。The semiconductor device further comprises: a semiconductor layer constituting the first substrate and the thin film transistor; and an interlayer insulating film interposed between layers forming the scanning line and the data line.
A groove is formed in at least one of the interlayer insulating film and the first substrate at a position facing the main wiring portion,
The electro-optical device according to claim 6, wherein the groove is not formed at a position facing the protrusion. 前記第１基板上に、少なくとも前記チャネル領域を前記第１基板の側から見て覆う位置に遮光膜を設けたことを特徴とする請求項１から８のいずれか一項に記載の電気光学装置。The electro-optical device according to any one of claims 1 to 8, wherein a light shielding film is provided on the first substrate at a position covering at least the channel region as viewed from the side of the first substrate. . 前記遮光膜は、前記走査線に沿って縞状に形成されていることを特徴とする請求項９に記載の電気光学装置。10. The electro-optical device according to claim 9, wherein the light shielding film is formed in a stripe shape along the scanning line. 前記遮光膜は、前記走査線及び前記データ線に沿って格子状に形成されていることを特徴とする請求項９に記載の電気光学装置。10. The electro-optical device according to claim 9, wherein the light shielding film is formed in a lattice shape along the scanning line and the data line. 前記第２基板上に、前記データ線及び前記走査線の少なくとも一部を前記第２基板の側から見て覆う位置に配置されており各画素の開口領域を少なくとも部分的に規定する他の遮光膜を更に備えたことを特徴とする請求項１から１０のいずれか一項に記載の電気光学装置。Another light shield is disposed on the second substrate so as to cover at least a part of the data line and the scanning line as viewed from the side of the second substrate and at least partially define the opening region of each pixel The electro-optical device according to any one of claims 1 to 10, further comprising a film. 前記突出部は、平面的に見て走査線の半分以上を覆うように配置されていることを特徴とする請求項６に記載の電気光学装置。7. The electro-optical device according to claim 6, wherein the protrusion is arranged to cover a half or more of the scanning line in plan view. 前記データ線は、下層が低反射導電膜、上層が遮光性導電膜からなることを特徴とする請求項１から１３のいずれか一項に記載の電気光学装置。The electro-optical device according to any one of claims 1 to 13, wherein the lower layer of the data line is a low reflection conductive film, and the upper layer is a light shielding conductive film. 請求項１から１４のいずれか一項に記載の電気光学装置をライトバルブとして用いることを特徴とするプロジェクタ。A projector using the electro-optical device according to any one of claims 1 to 14 as a light valve.
JP2001070364A 2000-03-13 2001-03-13 Electro-optical device and projector Expired - Fee Related JP4066607B2 (en)

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JP2000-69413 2000-03-13
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JP2001330861A5 true JP2001330861A5 (en) 2004-12-24
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JP4193792B2 (en) 2004-11-30 2008-12-10 エプソンイメージングデバイス株式会社 LCD panel
JP4475238B2 (en) 2006-01-13 2010-06-09 セイコーエプソン株式会社 ELECTRO-OPTICAL DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE
CN109343287B (en) * 2018-11-23 2022-03-25 昆山龙腾光电股份有限公司 Array substrate, liquid crystal display device and driving method

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JPH0572562A (en) * 1991-09-18 1993-03-26 Seiko Epson Corp Active matrix type display device
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JP3751681B2 (en) * 1996-06-11 2006-03-01 ソニー株式会社 Liquid crystal display device and manufacturing method thereof
JP3669082B2 (en) * 1996-10-17 2005-07-06 ソニー株式会社 Thin film transistor array for liquid crystal display elements
US6850292B1 (en) * 1998-12-28 2005-02-01 Seiko Epson Corporation Electric-optic device, method of fabricating the same, and electronic apparatus
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