JP2001330861A - Electrooptical device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To increase a performance for shielding the incident light or returning light in the channel region or its adjacent region of a TFT in a pixel part by using a rather simple structure, with respect to an electrooptical device. SOLUTION: The electrooptical device has a liquid crystal layer (50) held between a pair of substrates and has pixel electrodes (9a) formed in a matrix in a TFT array substrate (10). The data line (6) consists of a light-shielding material and has the main wiring part (6a) which covers the channel region (1a') of the TFT and its adjacent region when the substrate is observed from the counter substrate (20) side, and a protruding part (6b) protruding from the main wiring part along the scanning line.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plurality of pixel electrodes arranged in a matrix and a plurality of thin film transistors (hereinafter referred to as T
FT) (which is referred to as FT) and belongs to the technical field of an electro-optical device of a TFT active matrix driving type.

[0002]

2. Description of the Related Art In an electro-optical device of a TFT active matrix driving type, when incident light is applied to a channel region of a pixel switching TFT provided in each pixel, a current is generated by excitation by light and the characteristics of the TFT change. I do. In particular, in the case of an electro-optical device for a light valve of a projector, since the intensity of incident light is high, it is important to shield the TFT channel region and its peripheral region from incident light. Conventionally, the channel region and its peripheral region are shielded from light by a light shielding film that defines an opening region of each pixel provided on the opposite substrate or a data line on the TFT array substrate. Further, a position facing the pixel switching TFT on the TFT array substrate (that is, T
A light-shielding film made of, for example, a refractory metal may also be provided on the lower side of the FT. If a light-shielding film is also provided below the TFT as described above, reflection on the back surface from the TFT array substrate 10 side,
When a plurality of electro-optical devices are combined via a prism or the like to constitute one optical system, it is necessary to prevent projection light that penetrates the prism or the like from another electro-optical device from being incident on the TFT of the electro-optical device. Can be prevented.

On the other hand, in general, in this type of electro-optical device,
To prevent degradation of electro-optical material due to application of DC voltage, and to prevent crosstalk and flicker in displayed images,
An inversion driving method of inverting the potential polarity applied to each pixel electrode according to a predetermined rule is employed. If the 1H inversion driving method in which the pixel electrodes of the same row are driven by the same polarity potential and the potential polarity is reversed for each row in a frame or field cycle, if the control is relatively easy and high quality image display is possible, This is used as an inversion driving method.

[0004]

However, the above-described various light-shielding techniques have the following problems. That is,
Normally, the data lines are arranged in a stripe shape so as to intersect with the scanning lines in a plan view. Therefore, when the incident light intensity is extremely high as in the projector application described above, the incident light from the counter substrate side intersects the scanning line including the gate electrode facing the channel region having a certain width. It is basically difficult to sufficiently shield light with a data line that extends. Furthermore, the light-shielding film provided on the counter substrate side and the channel region or the semiconductor layer are considerably separated from each other via a liquid crystal layer, an electrode, an interlayer insulating film, or the like when viewed three-dimensionally. It is not sufficient to shield the light incident on the substrate with the light shielding film on the counter substrate side. Above all, the light-shielding film for shielding incident light from the counter substrate side, the data line, and the light-shielding film for shielding return light from the back surface are generally formed of a metal film due to the relationship with the high-temperature process of the TFT. And has a certain degree of reflectance. Therefore, even if a light shielding film is formed so as to block incident light to the channel region of the TFT and its peripheral region, actually,
Light that enters the electro-optical device from an area without a light-shielding film,
After being reflected by the inner surface of the opposite light-shielding film, the reflected light or the multiple reflected light that is further reflected by the inner surface of the opposite light-shielding film finally reaches the channel region of the TFT and its peripheral region, A current due to light is generated. As described above, according to the conventional light shielding technology, there is a first problem that flicker or the like occurs due to a change in the transistor characteristics of the TFT, and the quality of a displayed image is reduced.

On the other hand, the 1H inversion driving technique described above has the following problems. That is, when the potential of the image signal applied to the pixel electrodes adjacent to each other on the TFT array substrate has the opposite polarity as in the 1H inversion driving method,
A horizontal electric field is generated between adjacent pixel electrodes. Therefore, an electro-optical material such as a liquid crystal, which is originally assumed to be driven by a vertical electric field in a direction perpendicular to the substrate, causes a reverse tilt due to the influence of the horizontal electric field and causes light leakage. As a result, the contrast ratio is reduced. On the other hand, it is possible to cover a region where a horizontal electric field is generated with a light-shielding film. However, in this case, an opening region of a pixel is narrowed in accordance with a width of a region where a horizontal electric field is generated. In particular, as the distance between adjacent pixel electrodes is reduced due to the miniaturization of the pixel pitch, such a lateral electric field is increased. Therefore, these problems become more serious as the definition of the electro-optical device becomes higher. I will. As described above, according to the conventional 1H inversion driving technique, there is a second problem that the quality of a display image is deteriorated due to the generation of a lateral electric field.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned first problem, and has a relatively simple structure. Therefore, even if the present invention is used in an environment where the light intensity of incident light or return light is high, the pixel switching TFT can be used. A first object is to provide a TFT active matrix driving electro-optical device capable of displaying a high-quality image with almost no change in characteristics.

Further, the present invention has been made in view of the above-mentioned second problem. By using a relatively simple structure and reducing the operation failure of the electro-optical material due to the transverse electric field, the aperture ratio of the pixel is increased. A second object is to provide an electro-optical device such as a liquid crystal device of a TFT active matrix driving system which can display a high-contrast, bright, high-quality image.

[0008]

According to a first aspect of the present invention, there is provided a first electro-optical device comprising a pair of first and second substrates sandwiching an electro-optical material. A semiconductor comprising a pixel electrode arranged in a matrix on a substrate, a thin film transistor for driving the pixel electrode, and a data line and a scanning line connected to the thin film transistor and intersecting with each other; At least a channel region of a layer is arranged in a plane region where the data line and the scanning line intersect, and the data line is:
A main wiring portion made of a light-shielding material and covering at least the channel region as viewed from the side of the second substrate and extending in a direction intersecting the scanning line; and a projection projecting along the scanning line for each channel region. And a part.

According to the first electro-optical device of the present invention, at least a channel region of a semiconductor layer constituting a thin film transistor connected to each pixel electrode is arranged in a plane region where a data line and a scanning line intersect. . Here, the data line is made of a light-shielding material, and the main wiring portion of the data line covers at least the channel region when viewed from the second substrate side and extends in a direction intersecting the scanning line. The protruding portion of the data line protrudes along the scanning line from a portion of the main wiring portion facing the channel region. Therefore, the channel region of the thin film transistor is viewed from the side of the second substrate,
It is wide in both the direction along the scanning line and the direction along the data line, and is covered by the main wiring portion and the protruding portion. As a result, it is possible to shield the channel region from not only the projection light vertically incident on the first substrate but also the projection light obliquely incident thereon, and the characteristic change in the thin film transistor due to imperfect light shielding. Can be prevented.

[0010] In particular, if such data lines at least partially define the opening area of each pixel above the thin film transistor on the first substrate, the opening area of the pixel on the second substrate is defined. It is also possible to configure so as not to provide a lattice-shaped or band-shaped light-shielding film. With the configuration in which the light-shielding film is not provided on the second substrate in this manner, it is not necessary to increase the width of the light-shielding film on the second substrate in consideration of a shift when the two substrates are bonded to each other. This is advantageous in increasing the aperture ratio of each pixel.

In one aspect of the first electro-optical device of the present invention, the scanning line is provided in a gap between pixel electrodes adjacent to each other in a direction intersecting the scanning line when viewed in a plan view. The portion projects into the gap as viewed in plan.

According to this aspect, since the protruding portion protrudes into the gap between the pixel electrodes, the parasitic capacitance generated between the pixel electrode and the data line having the protruding portion can be reduced.

The edge of the scanning line may be slightly overlapped with the edge of the pixel electrode in a plan view, and the edge of the protrusion may be slightly overlapped with the edge of the pixel electrode. In particular, from the viewpoint of preventing light leakage between adjacent pixel electrodes, the edge of the protruding portion may be slightly overlapped with the edge of the pixel electrode.

In another aspect of the first electro-optical device of the present invention, the scanning lines are made of a polysilicon film, and the data lines are made of a light-shielding conductive film containing a metal.

According to this aspect, the scanning line is formed of a light-transmitting polysilicon film, but the main wiring portion and the projecting portion of the data line are formed of a light-shielding conductive film containing a metal such as an opaque aluminum film. By virtue of the above, it is possible to surely prevent a situation where incident light is obliquely incident via the scanning line and reaches a channel region in a plane region where the scanning line and the data line intersect.

In another aspect of the first electro-optical device of the present invention, the data line covers, in addition to the channel region, a channel adjacent region of the semiconductor layer adjacent to the channel region.

Therefore, not only the channel region but also the channel adjacent region of the thin film transistor is wide in both the direction along the scanning line and the direction along the data line when viewed from the second substrate side, and the main wiring portion and the protrusion portion are formed. Will be covered by As a result, a change in characteristics of the thin film transistor due to imperfect light shielding can be prevented.

In this embodiment, the thin film transistor is L
The thin film transistor includes a thin film transistor having a DD structure or an offset structure, and the channel adjacent region may include an LDD region or an offset region.

According to this structure, since the thin film transistor has the LDD structure or the offset structure, the off current can be reduced and stable switching characteristics can be obtained. At this time, since the LDD region or the offset region is shielded from light by the main wiring portion and the protruding portion of the data line, it is possible to suppress generation of a current in the LDD region or the offset region due to excitation by light.

In order to solve the second problem, the second electro-optical device according to the present invention comprises an electro-optical material sandwiched between a pair of first and second substrates, and a matrix-like material is provided on the first substrate. A pixel electrode, a thin film transistor that drives the pixel electrode, and a data line and a scanning line that are connected to the thin film transistor and intersect with each other. The pixel electrode faces the pixel electrode on the second substrate. The data line has a main wiring portion extending in a direction intersecting the scanning line, and a protruding portion protruding from the main wiring portion along the scanning line. The lower ground is flattened on the main wiring portion as compared with the protrusion, and is raised on the protrusion as compared with the main wiring portion, and the pixel electrode and the counter electrode are Images arranged along scan lines Is inversion driving for every electrode group.

According to the second electro-optical device of the present invention, since the protruding portion protrudes from the main wiring portion along the scanning line, the lower ground of the pixel electrode is higher on the protruding portion than on the main wiring portion. It is excited at. Therefore, in the raised portion, the vertical electric field generated between the pixel electrode and the counter electrode and substantially in inverse proportion to the distance between the two electrodes is relatively strengthened as compared with the non-lifted portion. On the other hand, the pixel electrode and the counter electrode are driven to be inverted for each pixel electrode group arranged along the scanning line. That is, the above-described 1H inversion driving is performed. Therefore, a horizontal electric field is generated in a gap region between pixel electrodes adjacent to each other in a direction intersecting the scanning line when viewed in a plan view. However, in the present invention, the gap region where the lateral electric field is generated is nothing but the region where the ground below the pixel electrode is raised as described above. Therefore, since the vertical electric field is strengthened in the region where the horizontal electric field is generated, the adverse effect of the horizontal electric field should be reduced by the strong vertical electric field in the electro-optical device which is supposed to be driven by the vertical electric field. Becomes possible. As a result, the malfunction of the electro-optical material due to the adverse effect of the lateral electric field is reduced.

Further, since the lower ground of the pixel electrode is flattened on the main wiring portion of the data line, the vertical electric field is not particularly strengthened in the gap region between the pixel electrodes adjacent to each other in the direction intersecting the data line. However, in this region, no horizontal electric field is generated in the above-described 1H inversion driving. Therefore, in this region, it is not necessary to prevent the adverse effect of the lateral electric field. vice versa,
In this region, the operation failure of the electro-optical material generally caused by a step on the lower ground of the pixel electrode is reduced by flattening.

As a result, it is possible to prevent a decrease in the contrast ratio due to an operation failure of the electro-optical material due to a lateral electric field or a step, and finally, it is possible to display a high-quality image.

In one aspect of the second electro-optical device according to the present invention, the projecting portions are arranged so as to occupy at least half of the pixel electrodes adjacent to each other in plan view.

According to this aspect, since the projecting portion is arranged so as to occupy most of the area occupied by the pixel electrodes,
As described above, the vertical electric field can be increased in most of the region where the horizontal electric field is generated due to the presence of the protrusion. However, since operation is not possible if adjacent data lines are short-circuited, it is necessary to at least slightly separate two projecting portions in the same pixel electrode gap. In addition, for example, if a contact hole that electrically connects a pixel electrode and a thin film transistor intersects with a protruding portion, operation becomes impossible, so that if such a contact hole is opened, avoid this. The projections are arranged in a plane.

In another aspect of the second electro-optical device according to the present invention, the first substrate and the semiconductor layer forming the thin film transistor, and the interlayer insulating films interposed between the layers forming the scanning lines and the data lines, respectively, are formed. And at least one of the interlayer insulating film and the first substrate,
A groove is formed at a position facing the main wiring portion, and the groove is not formed at a position facing the projecting portion.

According to this aspect, the main wiring portion is buried directly or via the interlayer insulating film in a groove formed in at least one of the interlayer insulating film and the first substrate.
The lower ground of the pixel electrode on the main wiring portion is flattened. In comparison with this, since the protrusion is not buried in the groove, the lower ground of the pixel electrode on the protrusion is relatively raised.

In another aspect of the first or second electro-optical device of the present invention, a light-shielding film is provided on the first substrate at a position covering at least the channel region when viewed from the first substrate side.

According to this aspect, the light-shielding film is provided at a position that covers at least the channel region of the thin film transistor when viewed from the first substrate side (ie, below the thin film transistor on the first substrate). Therefore, the channel region of the thin film transistor is shielded from the return light emitted from the first substrate by the light shielding film, so that a change in characteristics due to light irradiation on the thin film transistor can be prevented.

In this aspect, the light shielding film may be formed in a stripe shape along the scanning line.

With this configuration, the thin-film transistor blocks the return light and the like from the first substrate by the stripe-shaped light-shielding film. In this case, it is also possible to use a light-shielding film formed in stripes along the scanning lines as wiring, and further connect the light-shielding film to a constant-potential wiring or a constant-potential source, for example, by drawing the light-shielding film out of the image display area. This makes it possible to relatively easily set the light shielding film to a constant potential. By setting the light-shielding film facing the channel region of the thin film transistor to a constant potential in this way, it is possible to prevent a situation in which a change in the potential of the light-shielding film adversely affects the characteristics of the thin film transistor. Alternatively, the light-shielding film can function as a redundant wiring for another wiring.

In this case, the light-shielding film is formed so as to cover at least the channel region and extend along the scanning line, and to be formed in a grid along the scanning line and the data line. You may.

According to this structure, the light-shielding region extending along the scanning line and the light-shielding region extending along the data line more reliably shields the return light and the like from the first substrate. I can do it.

In another aspect of the first or second electro-optical device of the present invention, a position where at least a part of the data lines and the scanning lines overlaps on the second substrate as viewed from the side of the second substrate. , And further includes another light-shielding film that at least partially defines an opening region of each pixel.

According to this aspect, another light-shielding film which is disposed on the second substrate and defines an opening area of each pixel is provided at a position at least partially overlapping the data line and the scanning line. Therefore, the channel region is shielded from incident light by the light-shielding film on the second substrate side and the data lines on the first substrate side. Further, the opening area of each pixel is defined by the data lines and the light-shielding film on the second substrate side.

In one aspect of the second electro-optical device according to the present invention, the projecting portion is arranged so as to cover at least half of the scanning line in plan view.

According to this aspect, since the protruding portion is arranged so as to occupy most of the area occupied by the scanning line portion between the pixel electrodes, scanning is performed in most of the area where the horizontal electric field is generated as described above. The vertical electric field can be enhanced by the step of the line and the presence of the protrusion. However, since operation is not possible if adjacent data lines are short-circuited, it is necessary to at least slightly separate two protruding portions overlapping the scanning line portion in the same gap. In addition, for example, if a contact hole that electrically connects a pixel electrode and a thin film transistor intersects with a protruding portion, operation becomes impossible, so that if such a contact hole is opened, avoid this. The projections are arranged in a plane.

In another aspect of the first or second electro-optical device of the present invention, the lower layer of the data line is made of a low-reflection conductive film, and the upper layer is made of a light-shielding conductive film.

According to this aspect, the data line is formed by forming the upper layer to be irradiated with the incident light from a light-shielding conductive film and forming the lower layer into a multilayer by a low-reflection conductive film or the like, so that the obliquely incident incident light is formed. In contrast, since the light can be absorbed by the protruding portion of the data line, it is possible to minimize the light reflected on the light-shielding film or the like from reaching the channel region 1a 'and its adjacent region.

The operation and other advantages of the present invention will become more apparent from the embodiments explained below.

[0041]

Embodiments of the present invention will be described below with reference to the drawings. In addition, each embodiment described below,
The electro-optical device according to the invention is applied to a liquid crystal device.

(First Embodiment of Electro-Optical Device) A first embodiment of an electro-optical device according to the present invention will be described with reference to FIGS. Here, FIG. 1 is an equivalent circuit of various elements, wirings, and the like in a plurality of pixels formed in a matrix and constituting an image display area of the electro-optical device. FIG. 2 is a plan view of a plurality of adjacent pixel groups on a TFT array substrate on which data lines, scanning lines, pixel electrodes, and the like are formed.
FIG. 4 is a sectional view taken along line AA ′ of FIG. 2, and FIG.
It is B 'sectional drawing. In FIGS. 3 and 4, the scale of each layer and each member is made different so that each layer and each member have a size recognizable in the drawings.

In FIG. 1, a plurality of pixels formed in a matrix and constituting an image display area of the electro-optical device according to the present embodiment have TFTs for controlling a pixel electrode 9a.
The data line 6 to which an image signal is supplied is electrically connected to the source of the TFT 30. Image signals S1, S2,..., S to be written to the data lines 6
n may be supplied line-sequentially in this order, or may be supplied to a plurality of adjacent data lines 6 for each group. Further, the scanning line 3a is electrically connected to the gate of the TFT 30, and the scanning signal G1, G2,...
Gm is configured to be applied line-sequentially in this order. The pixel electrode 9a is electrically connected to the drain of the TFT 30. By closing the switch of the TFT 30, which is a switching element, for a certain period, the image signals S1, S2,. Write at a predetermined timing. The image signals S1, S2,... Of a predetermined level written in the liquid crystal via the pixel electrode 9a
Sn is held for a certain period between a counter electrode (to be described later) formed on a counter substrate (to be described later). The liquid crystal modulates light by changing the orientation and order of the molecular assembly according to the applied voltage level, thereby enabling gray scale display.
In the normally white mode, the incident light cannot be passed according to the applied voltage. In the normally black mode, the incident light can be passed according to the applied voltage. Light having a contrast corresponding to the image signal is emitted from the optical device. Here, in order to prevent the held image signal from leaking, a storage capacitor 70 is added in parallel with a liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode.

In FIG. 2, a plurality of transparent pixel electrodes 9 are arranged in a matrix on a TFT array substrate of an electro-optical device.
a (the outline is indicated by a dotted line portion 9a ′), and the data line 6, the scanning line 3a, and the capacitor line 3b are provided along the vertical and horizontal boundaries of the pixel electrode 9a.
The data line 6 is electrically connected to a source region, which will be described later, of the semiconductor layer 1a made of a polysilicon film or the like via the contact hole 5, and the pixel electrode 9a is connected to the semiconductor layer 1a via the contact hole 8. Of these, it is electrically connected to a drain region described later. In addition, the scanning line 3a is arranged so as to face the channel region 1a '(the hatched region on the lower right in the figure) of the semiconductor layer 1a.
Functions as a gate electrode. Thus, the scanning line 3a
Each of the TFTs 30 where the scanning lines 3a are opposed to each other as gate electrodes in the channel region 1a 'is provided at the intersections of the data lines 6 with the data lines 6.

The capacitance line 3b has a main line portion extending substantially linearly along the scanning line 3a, and a protruding portion protruding forward (upward in the figure) along the data line 6 from a location intersecting the data line 6. And

Further, the scanning lines 3a and T are respectively provided in regions substantially overlapping the scanning lines 3a and the capacitance lines 3b indicated by bold lines in FIG.
The first light shielding film 11a is provided so as to pass under the FT 30. More specifically, in FIG. 2, the first light-shielding film 11a is formed in a stripe shape along the scanning line 3a and the capacitance line 3b, and a portion intersecting with the data line 6 is formed to protrude downward. The channel region 1a 'of each TFT 30 and its adjacent region are provided at positions that cover the channel region 1a' of each TFT 30 and its adjacent region when viewed from the TFT array substrate side. Note that the first light-shielding film 11a is
a and may be formed in a lattice shape extending along the data line 6. With such a configuration, the light-shielding property of the electro-optical device is further enhanced, which is advantageous.

In the present embodiment, in particular, the data line 6 indicated by the diagonally left-downward slant in FIG. 2 includes a main wiring portion 6a extending in a direction orthogonal to the scanning line 3a, and a line extending from the main wiring portion 6a along the scanning line 3a. And a protruding portion 6b that protrudes. That is, FIG.
In the middle, the channel region 1a 'and its adjacent region
b, the width of the data line 6 that is formed wide allows not only the incident light perpendicularly incident on the substrate surface,
In FIG. 2, incident light obliquely incident from above, below, left and right is shielded. As described above, the data line 6 having the main wiring portion 6a and the protruding portion 6b is made of, for example, an existing metal thin film such as Al (aluminum) having excellent light-shielding properties, extensibility, and conductivity. In this case, the data line 6 is obliquely incident by forming the upper layer to be irradiated with the incident light from a light-shielding Al film and the lower layer from a multi-layer of a low reflection film TiN (titanium nitride) film or the like. The incoming light can be absorbed by the protrusion 6b of the data line 6, so that light reflected on the first light-shielding film 11a and the like reaches the channel region 1a 'and its adjacent region as much as possible. Can be suppressed. The degree of protrusion of the protruding portion 6b (that is, the main wiring portion 6) depends on the device specifications such as the angle of incident light and the thickness of the liquid crystal layer, and the device performance such as the required contrast ratio and brightness.
The distance protruding from a) may be individually and specifically set based on experiments, experiences, simulations, theoretical calculations, and the like.

Next, FIGS. 3 and 4 respectively show AA 'of FIG.
As shown in the cross-sectional view and the BB ′ cross-sectional view, the electro-optical device includes a TFT array substrate 1 which is an example of a first substrate.
0 and an opposing substrate 20 that is an example of a second substrate that is disposed to oppose it. TFT array substrate 10
Is composed of, for example, a quartz substrate, a glass substrate, and a silicon substrate, and the counter substrate 20 is composed of, for example, a glass substrate or a quartz substrate. The pixel electrode 9a is provided on the TFT array substrate 10, and an alignment film 16 on which a predetermined alignment process such as a rubbing process is performed is provided above the pixel electrode 9a. The pixel electrode 9a is made of, for example, a transparent conductive film such as an ITO (Indium Tin Oxide) film. The alignment film 16 is made of, for example, an organic film such as a polyimide film.

On the other hand, a counter electrode 21 is provided on the entire surface of the counter substrate 20, and an alignment film 22 on which a predetermined alignment process such as a rubbing process is performed is provided below the counter electrode 21. I have. The counter electrode 21 is made of, for example, a transparent conductive film such as an ITO film. The alignment film 22 is made of an organic film such as a polyimide film.

Each pixel electrode 9 is provided on the TFT array substrate 10.
A pixel switching TFT 30 that controls switching of each pixel electrode 9a is provided at a position adjacent to the pixel electrode 9a.

The opposing substrate 20 is provided with a second light-shielding film 23 for defining at least a part of the opening area of each pixel. Therefore, it is possible to prevent the incident light from entering the channel region 1a 'of the semiconductor layer 1a of the pixel switching TFT 30 and the adjacent region from the side of the counter substrate 20 together with the data line 6 having the light shielding function as described above. . Further, the second light-shielding film 23 has a function of improving contrast, preventing color mixture of color materials when using a color filter, and the like. However, when giving priority to improving the brightness by increasing the aperture ratio of each pixel, the second light-shielding on the opposing substrate 20 is taken into consideration in consideration of a margin when the TFT array substrate 10 and the opposing substrate 20 are bonded. It is advantageous to remove the membrane 23. In this case, it goes without saying that the light shielding means is provided on the TFT array substrate 10. Further, in order to avoid a rise in the temperature of the electro-optical device due to incident light, a thin second light-shielding film 23 may be provided.

Between the TFT array substrate 10 and the opposing substrate 20 having the above-described structure and the pixel electrode 9a and the opposing electrode 21 arranged so as to face each other, a liquid crystal is filled in a space surrounded by a sealing material described later. Is sealed, and the liquid crystal layer 50 is formed. The liquid crystal layer 50 assumes a predetermined alignment state by the alignment films 16 and 22 when no electric field is applied from the pixel electrode 9a. The liquid crystal layer 50 is made of, for example, a liquid crystal in which one or several kinds of nematic liquid crystals are mixed. The sealing material is
An adhesive made of, for example, a photocurable resin or a thermosetting resin for bonding the TFT array substrate 10 and the opposing substrate 20 around the periphery thereof, and a glass fiber or a glass fiber for setting a distance between the two substrates to a predetermined value. Gap material such as glass beads is mixed.

Further, as shown in FIG. 3, a first light-shielding film 11a is provided between the TFT array substrate 10 and each pixel switching TFT 30 at a position facing each of the pixel switching TFTs 30. First light shielding film 1
1a is preferably a non-transparent high melting point metal such as Ti (titanium), Cr (chromium), W (tungsten), Ta
(Tantalum), Mo (molybdenum), Pb (lead), and the like, including a metal simple substance, an alloy, a metal silicide, or the like. With such a material, the first light-shielding film 11a is not broken or melted by high-temperature processing in the step of forming the pixel switching TFT 30 performed after the step of forming the first light-shielding film 11a on the TFT array substrate 10. I can do it. First light shielding film 11a
Is formed, it is possible to prevent returning light from the side of the TFT array substrate 10 and the like from being incident on the channel region 1a 'of the pixel switching TFT 30 and the adjacent region thereof. Does not change the characteristics of the pixel switching TFT 30.

Further, as shown in FIGS. 3 and 4, a first interlayer insulating film 12 is provided between the first light shielding film 11a and the plurality of pixel switching TFTs 30. The first interlayer insulating film 12 is provided to electrically insulate the semiconductor layer 1a constituting the pixel switching TFT 30 from the first light shielding film 11a. Further, since the first interlayer insulating film 12 is formed on the entire surface of the TFT array substrate 10, it also has a function as a base film for the pixel switching TFT 30. That is, the TFT array substrate 10
It has a function of preventing a change in the characteristics of the pixel switching TFT 30 due to roughness at the time of polishing the surface, dirt remaining after cleaning, and the like. The first interlayer insulating film 12 is, for example, NSG
(Non-doped silicate glass), PSG (phosphorus silicate glass), BSG (boron silicate glass),
It is made of a highly insulating glass such as BPSG (boron phosphorus silicate glass), a silicon oxide film, a silicon nitride film, or the like. The first interlayer insulating film 12 can prevent the first light-shielding film 11a from contaminating the pixel switching TFT 30 and the like.

In this embodiment, the insulating thin film 2 is connected to the scanning line 3a.
The first storage capacitor electrode 1f is provided by extending the semiconductor film 1a from a position facing the first storage capacitor electrode 1f, and a part of the capacitor line 3b facing the first storage capacitor electrode 1f is a second storage capacitor electrode. Thus, the storage capacitor 70 is configured. More specifically, the high-concentration drain region 1e of the semiconductor layer 1a
The capacitor line 3b extends below the data line 6 and the scanning line 3a, and is also opposed to the capacitor line 3b extending along the data line 6 and the scanning line 3a with the insulating thin film 2 interposed therebetween. Have been. In particular, the insulating thin film 2 as a dielectric of the storage capacitor 70 is nothing but the gate insulating film of the TFT 30 formed on the polysilicon film by high-temperature oxidation.
It is possible to form a thin and high withstand voltage insulating film, and the storage capacitance 7
0 can be configured as a large-capacity storage capacitor with a relatively small area.

In FIG. 3, the pixel switching TFT
Reference numeral 30 denotes a scanning line 3a, a channel region 1a 'of the semiconductor layer 1a in which a channel is formed by an electric field from the scanning line 3a, a scanning line 3a and the semiconductor layer 1.
a, the insulating thin film 2, the data line 6, the semiconductor layer 1a
Lightly doped source region 1b and lightly doped drain region 1c,
The semiconductor layer 1a includes a high-concentration source region 1d and a high-concentration drain region 1e. A corresponding one of the plurality of pixel electrodes 9a is connected to the high-concentration drain region 1e. The low-concentration source region 1b and the high-concentration source region 1d and the low-concentration drain region 1c and the high-concentration drain region 1e have a predetermined concentration of n-type with respect to the semiconductor layer 1a depending on whether an n-type or p-type channel is formed. And p-type impurities. On the scanning line 3a, the insulating thin film 2, and the first interlayer insulating film 12,
A second interlayer insulating film 4 is formed in which a contact hole 5 leading to the high concentration source region 1d and a contact hole 8 leading to the high concentration drain region 1e are formed. The data line 6 is electrically connected to the high-concentration source region 1d via the contact hole 5. Further, the data line 6
And a high concentration drain region 1 on the second interlayer insulating film 4.
A third interlayer insulating film 7 in which a contact hole 8 to e is formed. The pixel electrode 9a is electrically connected to the high-concentration drain region 1e via the contact hole 8. The pixel electrode 9a has the third configuration as described above.
It is provided on the upper surface of the interlayer insulating film 7. The pixel electrode 9
a and the high-concentration drain region 1e are electrically connected to each other by relaying the same Al film as the data line 6 or the same polysilicon film as the scanning line 3b, or exclusively through a relay conductive film. It may be.

The pixel switching TFT 30 preferably has an LDD structure as described above, but may have an offset structure in which impurities are not implanted into the low-concentration source region 1b and the low-concentration drain region 1c. 3
A self-aligned TFT in which impurity ions are implanted at a high concentration using the gate electrode, which is a part of a, as a mask to form high-concentration source and drain regions in a self-aligned manner may be used.

In this embodiment, a single gate structure is employed in which only one gate electrode, which is a part of the scanning line 3a of the pixel switching TFT 30, is disposed between the high-concentration source region 1d and the high-concentration drain region 1e. Two or more gate electrodes may be arranged between them. At this time, the same signal is applied to each gate electrode. When a TFT is formed with a dual gate or a triple gate or more as described above, a leak current at a junction between a channel and a source / drain region can be prevented, and a current in an off state can be reduced. If at least one of these gate electrodes has an LDD structure or an offset structure, the off-state current can be further reduced, and a stable switching element can be obtained.

As shown in FIGS. 2 to 4, in the first embodiment, in particular, the channel region 1a 'of the semiconductor layer 1a constituting the TFT 30 and its adjacent region are located in a plane region where the data line 6 and the scanning line 3a intersect. An area is arranged. Here, assuming that the projection 6b of the data line 6 does not exist, since the scanning line 3a and the capacitance line 3b are formed of a polysilicon film having a low light-shielding property, the incident light obliquely incident on the data line 6 has an Depending on the thickness of the liquid crystal layer 50 and the like, the light may enter the channel region 1a 'and the adjacent region via the scanning line 3a and the capacitance line 3b. However, in the present invention, the light-shielding property A
The presence of the protruding portion 6b extending from the data line 6 made of a light-shielding conductive film containing a metal such as l can surely block incident light that is obliquely incident. Furthermore, the first
Since the light-shielding film 11a is provided at a position covering the channel region 1a 'of the TFT 30 and its adjacent region as viewed from below the TFT 30, the channel region 1a' and its adjacent region enter from the TFT array substrate 10 side. For example, the first light-shielding film 11a protects against back-reflected light and return light such as projection light from another electro-optical device that penetrates the combined optical system when a plurality of electro-optical devices are used in combination. Since the light is shielded, it is possible to prevent a change in characteristics of the TFT 30 due to return light or the like. Accordingly, the light shielding of the channel region 1a 'of the TFT 30 and its adjacent region is not shown in FIG.
For the middle and upper parts, the main wiring portion 6a of the light-shielding data line 6
And the protrusion 6b and the second light-shielding film 23 on the counter substrate 20
In FIG. 3, the lower side is formed by a first light-shielding film 11a.
The light shielding is reliably performed by enclosing the region a ′ and the adjacent region from above and below. In addition, it is possible to effectively prevent the multiple reflection light generated in the electro-optical device from being incident on the channel region 1a ′ and its adjacent region.

Furthermore, as in the present embodiment, if the opening area of each pixel is partially defined above the TFT 30 on the TFT array substrate 10 by the data line 6, the opposite substrate 2
It is advantageous that a grid-like or band-like second light-shielding film 23 for defining an opening area of a pixel is provided in a smaller area on 0.

In addition, in this embodiment, the scanning line 3a is provided in the gap between the pixel electrodes 9a adjacent to each other in the direction intersecting the scanning line 3a when viewed in plan, and the projection 6b is Seen, it protrudes into this gap. Therefore, the parasitic capacitance generated between the pixel electrode 9a and the protrusion 6b can be reduced. As shown in FIG. 2, the edge of the scanning line 3a slightly overlaps with the edge of the pixel electrode 9a in plan view, and the edge of the protrusion 6b slightly overlaps with the edge of the pixel electrode 9a. Have been. From the viewpoint of preventing light leakage between adjacent pixel electrodes 9a, the edge of the protruding portion 6b is
It is better to slightly overlap the edge of a. Overlapping the projection 6a protruding from the data line 6 and the pixel electrode 9a in this manner leads to the generation of a parasitic capacitance between the data line 6 and the pixel electrode 9a. It is preferred that they overlap slightly.

In the present embodiment described above,
The first light shielding film 11a may be electrically connected to a constant potential source. With this configuration, the potential fluctuation of the first light-shielding film 11a does not adversely affect the pixel switching TFT 30 that is disposed to face the first light-shielding film 11a. Further, by setting the capacitance line 3b to a constant potential, the capacitor line 3b can function well as the second storage capacitor electrode of the storage capacitor 70. in this case,
As the constant potential source, a constant potential source such as a negative power supply or a positive power supply supplied to a peripheral circuit (for example, a scanning line driving circuit, a data line driving circuit, or the like) for driving the electro-optical device, a ground power supply, A constant potential source supplied to the electrode 21 is exemplified.

As described in detail above, according to the electro-optical device of the present embodiment, the channel region 1a 'of the TFT 30 in the pixel portion and the light-shielding function in the region adjacent thereto are high, so that a high-quality image display can be achieved with good TFT characteristics. Since the pixel aperture ratio is hardly reduced by the light-shielding film, a bright image can be displayed.

(Second Embodiment of Electro-Optical Device) A second embodiment of the electro-optical device according to the present invention will be described with reference to FIGS. FIG. 5 is a plan view of a plurality of adjacent pixel groups of a TFT array substrate on which data lines, scanning lines, pixel electrodes, and the like are formed, and FIG. 6 is a cross-sectional view taken along line AA ′ of FIG. FIG. 7 is a schematic plan view of a pixel electrode showing a potential polarity and a region where a lateral electric field is generated in each electrode in the 1H inversion driving method. The sectional view taken along the line BB ′ of FIG. 5 in the second embodiment is the same as that shown in FIG. 4 in the first embodiment. In the second embodiment shown in FIGS. 5 and 6, the same components as those in the first embodiment shown in FIGS. 1 to 4 are denoted by the same reference numerals, and description thereof will be omitted. 5 and 6, in order to make each layer and each member a size recognizable in the drawings,
The scale is different for each layer and each member.

As shown in FIGS. 5 and 6, in the second embodiment, the protruding portion 6b 'of the data line 6' has a region occupied by adjacent pixel electrodes 9a and a scanning line 3a. Are arranged so as to occupy more than half of each area. Further, the electro-optical device according to the second embodiment is driven by a 1H inversion driving method of inverting the potential polarity applied to the liquid crystal layer 50 for each group of the pixel electrodes 9a along the same scanning line 3a. Other configurations are the same as in the first embodiment.

Referring now to FIG. 7, adjacent pixel electrodes 9 in the 1H inversion driving method employed in this embodiment.
The relationship between the potential polarity of a and the region where the lateral electric field is generated will be described.

That is, as shown in FIG. 7A, during the period of displaying the image signal of the nth (where n is a natural number) field or frame, the liquid crystal indicated by + or-for each pixel electrode 9a. The polarity of the drive voltage is not inverted, and the pixel electrodes 9a are driven with the same polarity for each row. Thereafter, as shown in FIG. 7B, when displaying the image signal of the (n + 1) th field or one frame, the potential polarity of the liquid crystal driving voltage in each pixel electrode 9a is inverted, and the (n + 1) th field or one frame of the one frame is displayed. During the period of displaying the image signal, the polarity of the liquid crystal drive voltage indicated by + or-is not inverted for each pixel electrode 9a, and the pixel electrodes 9a are driven with the same polarity for each row. Then, the states shown in FIGS. 7A and 7B are repeated at a cycle of one field or one frame, and the driving by the 1H inversion driving method in the present embodiment is performed. As a result, according to the present embodiment, image display with reduced crosstalk and flicker can be performed while avoiding deterioration of the liquid crystal due to the application of the DC voltage. According to the 1H inversion driving method, the liquid crystal layer 50 is provided for each pixel electrode 9a in the column direction.
This is advantageous in that there is almost no crosstalk in the column direction as compared with the 1S inversion driving method in which the polarity of the potential applied to the pixel is inverted.

As can be seen from FIGS. 7A and 7B, in the 1H inversion driving method, the horizontal electric field generation region C1 always has the gap between the pixel electrodes 9a adjacent in the column direction (Y direction). It will be near.

Therefore, as shown in FIGS. 5 and 6, in the present embodiment, the protruding portions 6
A configuration is adopted in which the distance between the pixel electrode 9a and the counter electrode 21 is reduced as compared with other regions by forming b and raising the lower ground of the pixel electrode 9a. As a result, the vertical electric field is relatively strengthened and the horizontal electric field is weakened.
The adverse effect of the lateral electric field on zero is reduced.

In particular, according to the second embodiment, at least half of the region where the lateral electric field is generated as described above,
Can enhance the vertical electric field. However, the pixel electrode 9a
Contact hole 8 for electrically connecting the TFT 30
And the protruding part 6b intersects, it becomes impossible to operate.
When the contact hole 8 is opened, the protruding portion 6b is arranged in a plane so as to avoid this. Moreover, since the lower ground of the pixel electrode 9a is flattened on the main wiring portion 6a of the data line 6, poor alignment of the liquid crystal generally caused by a step on the lower ground of the pixel electrode 9a is reduced by the flattening. I have.

As a result, according to the second embodiment, it is possible to prevent a decrease in the contrast ratio due to light leakage due to poor alignment of the liquid crystal due to a lateral electric field or a step, and finally a high-quality image is obtained. Display becomes possible.

Incidentally, as described above, the main wiring portion 6a of the data line 6 is formed.
In order to planarize the pixel electrode 9a along the first line, at least one of the first interlayer insulating film 12, the second interlayer insulating film 4, the third interlayer insulating film 7, and the TFT array substrate 10
A groove may be formed at a position opposing to a, and a main wiring portion 6a may be buried in the groove without forming a groove at a position opposing the protruding portion 6b. By partially flattening in this manner, a high contrast ratio can be realized.

(Overall Configuration of Electro-Optical Device) The overall configuration of each embodiment of the electro-optical device configured as described above is shown in FIG.
This will be described with reference to FIG. FIG. 8 is a plan view of the TFT array substrate 10 together with the components formed thereon viewed from the counter substrate 20 side. FIG. It is H 'sectional drawing.

In FIG. 8, a sealing material 52 is provided on the TFT array substrate 10 along the edge thereof.
A third light-shielding film 53 as a picture frame made of the same or different material as the second light-shielding film 23 is provided in parallel with the inside. In a region outside the sealing material 52, a data line driving circuit 101 for driving the data line 6 by supplying an image signal to the data line 6 at a predetermined timing and an external circuit connection terminal 102 are arranged along one side of the TFT array substrate 10. A scanning line driving circuit 104 for driving the scanning line 3a by supplying a scanning signal to the scanning line 3a at a predetermined timing is provided along two sides adjacent to this one side. If the delay of the scanning signal supplied to the scanning line 3a does not matter, it goes without saying that the scanning line driving circuit 104 may be provided on only one side. Further, the data line driving circuits 101 may be arranged on both sides along the side of the image display area. Further, on one remaining side of the TFT array substrate 10, the scanning line driving circuits 1 provided on both sides of the image display area are provided.
A plurality of wirings 105 are provided to connect between the wirings 04. In at least one of the corners of the opposing substrate 20, an upper / lower conductive material 106 for electrically connecting the TFT array substrate 10 and the opposing substrate 20 is provided. Then, as shown in FIG. 9, the counter substrate 20 having substantially the same contour as the sealing material 52 shown in FIG. 8 is fixed to the TFT array substrate 10 by the sealing material 52. Note that, on the TFT array substrate 10, in addition to the data line driving circuit 101, the scanning line driving circuit 104, etc., a sampling circuit 103 for applying an image signal to a plurality of data lines 6 at a predetermined timing, a plurality of data A precharge circuit for supplying a precharge signal of a predetermined voltage level to the line 6 in advance of the image signal, an inspection circuit for inspecting the quality, defects, and the like of the electro-optical device during manufacturing or shipping are formed. You may.

The electro-optical device according to each of the embodiments described above is applied to a projector for color display.
Three electro-optical devices are used as RGB light valves, and light of each color separated through a dichroic mirror for RGB color separation is incident on each light valve as projection light. . Therefore, in each embodiment, the opposing substrate 20 is not provided with a color filter. However, an RGB color filter may be formed on the opposing substrate 20 in a predetermined area facing the pixel electrode 9a where the second light-shielding film 23 is not formed, together with the protective film. Further, a microlens may be formed on the counter substrate 20 so as to correspond to one pixel so as to improve the light collection efficiency of the incident light. Furthermore, in order to improve brightness, a dichroic filter that creates RGB colors using light interference is formed by depositing a number of interference layers having different refractive indexes on the counter substrate 20. Is also good.

In the electro-optical device according to each of the embodiments described above, incident light is made to enter from the side of the counter substrate 20 as in the related art. However, since the first light shielding film 11a is provided, the TFT array substrate 10 Incident light from the side of
The light may be emitted from the counter substrate 20 side. That is, even when the electro-optical device is attached to the projector in this manner, it is possible to prevent light from being incident on the channel region of the pixel switching TFT 30 and the region adjacent thereto.
It is possible to display a high quality image. Also, TF
By forming the first light-shielding film 11a on the T-array substrate 10, an AR-coated polarizing plate or AR film is used to prevent reflection on the back side of the TFT array substrate 10, or the TFT array substrate 10 There is no need to use a processed substrate. Therefore, according to each embodiment, the material cost can be reduced, and when attaching the polarizing plate,
This is very advantageous because the yield is not reduced due to dust, scratches, and the like. In addition, since light resistance is excellent, even if a bright light source is used or polarization conversion is performed by a polarization beam splitter to improve light use efficiency, image quality deterioration such as crosstalk due to light does not occur.

The switching element provided in each pixel has been described as a normal stagger type or coplanar type polysilicon TFT.
Embodiments are also effective for other types of TFTs such as TFTs and amorphous silicon TFTs.

The present invention is not limited to the above-described embodiments, but can be appropriately modified without departing from the spirit and spirit of the invention which can be read from the claims and the entire specification. Such an electro-optical device is also included in the technical scope of the present invention.

[Brief description of the drawings]

FIG. 1 is an equivalent circuit of various elements, wirings, and the like provided in a plurality of pixels in a matrix forming an image display area in an embodiment of an electro-optical device.

FIG. 2 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes, and the like are formed in the first embodiment of the electro-optical device.

FIG. 3 is a sectional view taken along line A-A 'of FIG.

FIG. 4 is a sectional view taken along line B-B 'of FIG.

FIG. 5 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes, and the like are formed in a second embodiment of the electro-optical device.

FIG. 6 is a sectional view taken along line A-A ′ of FIG. 5;

FIG. 7 is a schematic plan view of a pixel electrode showing a potential polarity and a region where a lateral electric field is generated in each electrode in the 1H inversion driving method used in the second embodiment.

FIG. 8 is a plan view of the TFT array substrate in the embodiment of the electro-optical device together with the components formed thereon viewed from the counter substrate side.

FIG. 9 is a sectional view taken along the line H-H 'of FIG.

[Description of Signs] 1a: semiconductor layer 1a ': channel region 1b: low-concentration source region 1c: low-concentration drain region 1d: high-concentration source region 1e: high-concentration drain region 1f: first storage capacitor electrode 2: insulating thin film 3a ... Scanning line 3b Capacitance line 4 Second interlayer insulating film 5 Contact hole 6 Data line 6a Main wiring 6b Projection 7 Third interlayer insulating film 8 Contact hole 9a Pixel electrode 10 TFT array Substrate 11a First light-shielding film 12 First interlayer insulating film 16 Alignment film 20 Counter substrate 21 Counter electrode 22 Alignment film 23 Second light-shielding film 30 TFT 50 Liquid crystal layer 52 Seal material 53 3 light-shielding film 70: storage capacitor 101: data line driving circuit 104: scanning line driving circuit

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 29/78 617A 619B

Claims (14)

[Claims] An electro-optical material is sandwiched between a pair of first and second substrates, and pixel electrodes arranged in a matrix on the first substrate; a thin film transistor for driving the pixel electrodes; A data line and a scanning line connected to the thin film transistor and intersecting with each other, and at least a channel region of a semiconductor layer forming the thin film transistor is arranged in a plane region where the data line and the scanning line intersect. The data line is made of a light-shielding material, covers the at least the channel region when viewed from the second substrate side, and extends in a direction intersecting with the scanning line. An electro-optical device, comprising: a protrusion protruding along a line. 2. The scanning line is provided in a gap between pixel electrodes adjacent to each other in a direction intersecting the scanning line when viewed in a plan view, and the protrusion is provided in the gap when viewed in a plan view. The electro-optical device according to claim 1, wherein the electro-optical device protrudes. 3. The electro-optical device according to claim 1, wherein the scanning line is made of a polysilicon film, and the data line is made of a conductive light-shielding film containing a metal. 4. The electric device according to claim 1, wherein the data line covers a channel adjacent region of the semiconductor layer adjacent to the channel region in addition to the channel region. Optical device. 5. The thin film transistor includes an LDD (Light
y Doped Drain) structure or a thin film transistor having an offset structure, wherein the channel adjacent region is
The electro-optical device according to claim 4, comprising an LDD region or an offset region. 6. An electro-optic material sandwiched between a pair of first and second substrates, a pixel electrode arranged in a matrix on the first substrate, a thin film transistor for driving the pixel electrode, A data line and a scanning line connected to the thin film transistor and crossing each other; and a counter electrode facing the pixel electrode on the second substrate, wherein the data line is connected to the scanning line. A main wiring portion extending in an intersecting direction, and a protruding portion protruding from the main wiring portion along the scanning line, wherein a lower ground surface of the pixel electrode is on the main wiring portion than on the protruding portion. The pixel electrode and the counter electrode are flattened and swelled on the protruding portion as compared with the main wiring portion, and the pixel electrode and the counter electrode are driven to be inverted for each pixel electrode group arranged along the scanning line. Electro-optical device characterized by the following: . 7. The electro-optical device according to claim 6, wherein the protruding portions are arranged so as to occupy at least half of adjacent pixel electrodes in a plan view. 8. The semiconductor device according to claim 1, further comprising: a semiconductor layer forming the first substrate and the thin film transistor; and an interlayer insulating film interposed between the respective layers forming the scanning lines and the data lines. 7. A groove is formed in at least one of the substrates at a position facing the main wiring portion, and the groove is not formed at a position facing the protruding portion. 8. The electro-optical device according to 7. 9. The light-emitting device according to claim 1, wherein a light-shielding film is provided on the first substrate at a position covering at least the channel region when viewed from the side of the first substrate. An electro-optical device according to claim 1. 10. The electro-optical device according to claim 9, wherein the light shielding film is formed in a stripe shape along the scanning line. 11. The electro-optical device according to claim 9, wherein the light shielding film is formed in a grid along the scanning lines and the data lines. 12. The pixel is arranged on the second substrate at a position covering at least a part of the data lines and the scanning lines when viewed from the side of the second substrate, and at least partially covers an opening area of each pixel. The electro-optical device according to claim 1, further comprising another prescribed light-shielding film. 13. The electro-optical device according to claim 6, wherein the projecting portion is arranged so as to cover at least half of the scanning line when viewed in plan. 14. The electro-optical device according to claim 1, wherein the lower layer of the data line is made of a low-reflection conductive film, and the upper layer is made of a light-shielding conductive film.