JP2001319915A - System and method for liquid treatment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a system and method for liquid treatment which has high area efficiency, can control the environment in the system and in each liquid treatment unit and can be easily maintained. SOLUTION: Each plating unit is covered with a closed housing, and a plating liquid atmosphere in each plating bath is enclosed to prevent the interference by a plating bath atmosphere of the adjacent plating units. The plating units are disposed in multiple stages around a main arm 35. The space in each treatment unit is divided into two sections. In the upper first section A, clean air is circulated and wafers W are carried in and out in the clean atmosphere. The plating bath exhausts the air from the lower second section B to prevent drops of a plating liquid from entering the first section A. The plating closed units M1-M4 are disposed on the lower stage of a treatment space S inside a process station and units for after treatments, such as washing treatment units 70, which require a cleaner atmosphere are disposed on the upper stage side of the treatment space S, to increase the area efficiency and create and maintain a clean atmosphere.

Description

DETAILED DESCRIPTION OF THE INVENTION

The present invention relates to liquid processing of a substrate to be processed such as a semiconductor wafer, and more particularly to a liquid processing system using a plurality of liquid processing apparatuses and a liquid processing method.

2. Description of the Related Art Conventionally, as a method of forming a metal layer on the surface of a substrate to be processed such as a semiconductor wafer, a method of performing a gas phase such as a sputtering method and a liquid processing method of performing a liquid phase such as a plating method have been known. However, a plating method using a liquid layer is often used because higher resolution can be obtained. When a metal layer is formed by a plating method, a plating solution tank containing a plating solution is prepared, and a substrate to be processed is immersed in the plating solution tank to perform a plating process. Therefore, a plating solution tank is essential. By the way, as the structure of a semiconductor element formed on a semiconductor wafer becomes more complicated, a plurality of plating solutions having different compositions have been used, and the number of plating solution tanks to be used has been increasing. Further, since a large number of wafers W need to be processed at one time in order to reduce the manufacturing cost of the semiconductor, the number of plating baths inevitably increases.

However, arranging a large number of plating solution tanks requires a large work space, and thus has a problem that the occupied area of the apparatus is increased and the production cost is increased. Further, when a plating solution tank is provided in the opened processing chamber, there is a problem that mist containing the plating solution diffuses from the plating solution tank, contaminates the entire processing chamber, and deteriorates the quality of the plating layer. Further, when a large number of plating solution tanks are provided in a large processing chamber, it becomes difficult to control the state of each plating solution tank, and there is a problem that the quality of the obtained metal layer is reduced. In addition, when the plating solution tanks having different compositions are arranged adjacent to each other, there is a possibility that the plating solution may be mixed from one plating solution tank to another plating solution tank, so that different types of plating solution tanks cannot be arranged in a small area. There's a problem. The present invention has been made to solve the above-mentioned conventional problems. That is, an object of the present invention is to provide a liquid processing system and a liquid processing system that have high area efficiency and can reduce the manufacturing cost of a semiconductor device as a product. Another object of the present invention is to provide a liquid processing system and a liquid processing method that can individually control the atmosphere of a liquid processing system and each liquid processing apparatus. Still another object of the present invention is to provide a liquid processing system and a liquid processing method that can easily perform maintenance management. It is another object of the present invention to provide a liquid processing system and a liquid processing system capable of performing high-efficiency processing by arranging liquid processing apparatuses using different types of processing liquids at high density.

According to a first aspect of the present invention, there is provided a liquid processing system configured to perform a first liquid processing on a substrate to be processed and to contain a first processing liquid containing at least metal ions. A first liquid processing apparatus, a second liquid processing apparatus that performs a second liquid processing on a substrate to be processed that has been subjected to the liquid processing by the first liquid processing apparatus, and a first liquid processing apparatus. A first transport unit configured to be capable of transporting the substrate to be processed to and from the second liquid processing apparatus and to be movable in a vertical direction, wherein the first liquid processing apparatus and the second Wherein the liquid processing apparatuses are arranged in multiple stages around the first transfer means. In the liquid processing system according to claim 1, the first
Since the liquid processing apparatus and the second liquid processing apparatus are arranged in multiple stages, the footprint in the liquid processing system can be reduced. The liquid processing system according to claim 2 is
A first liquid processing apparatus configured to perform a first liquid processing on a processing surface of a substrate to be processed and to contain a first processing liquid containing at least a metal ion; and the first liquid processing. A second liquid processing apparatus for performing a second liquid processing on a processing surface of the substrate to be processed which has been subjected to the liquid processing by the apparatus, and a second liquid processing on the other surface of the substrate to be processed, and the first liquid processing A first transport unit configured to be capable of transporting a substrate to be processed between the apparatus and the second liquid processing apparatus, and to be movable in a vertical direction, wherein the first liquid processing apparatus and the first A second liquid processing apparatus is provided in multiple stages around the first transfer means. The liquid processing system according to claim 2 includes a first liquid processing apparatus that performs liquid processing on one surface of the substrate to be processed, and a second liquid processing apparatus that performs liquid processing on the other surface of the substrate. In addition, both surfaces of the substrate to be processed can be respectively processed, and the processing efficiency is improved. The liquid processing system according to claim 3 performs the first liquid processing on the substrate to be processed,
A first liquid processing apparatus configured to be capable of containing a first processing liquid containing at least metal ions, and a substrate to be processed that has been subjected to liquid processing by the first liquid processing apparatus,
A second liquid processing apparatus for performing the liquid processing described above, and the substrate to be processed can be transported between the first liquid processing apparatus and the second liquid processing apparatus and can be moved in the vertical direction. A first transporting means, and a first gas supply means for supplying a purified gas into the liquid processing system, wherein the first liquid processing apparatus and The second liquid processing device is disposed in multiple stages around the first transfer means, and the second liquid processing device is located upstream of the first liquid processing device in the direction of movement of the clean air. It is characterized by being arranged on the side. The liquid processing system according to claim 3, further comprising a first gas supply unit that supplies a purified gas into the liquid processing system, wherein the second liquid processing apparatus is provided with a first gas supply unit. Also, the second liquid processing side can be kept clean at all times since it is also arranged on the upstream side in the direction of movement of the clean air. Claim 4
A first liquid processing apparatus configured to perform a first liquid processing on a substrate to be processed and to contain a first processing liquid containing at least a metal ion; and For the substrate to be processed, which has been subjected to the liquid treatment by the processing device,
A second liquid processing apparatus for performing a second liquid processing, and a first liquid processing apparatus disposed adjacent to and accessible to the first liquid processing apparatus and the second liquid processing apparatus arranged in multiple stages. A transporting means, and at least a second transporting means configured to be accessible to the second liquid processing apparatus, wherein the substrate to be processed, which has been subjected to the liquid processing by the second liquid processing apparatus, comprises: 2
And is carried out of the second liquid processing apparatus only by the transfer means. The liquid processing system according to claim 4, wherein the substrate to be processed, which has been subjected to the liquid processing by the second liquid processing apparatus, is carried out of the second liquid processing apparatus only by the second transfer means. The second
The first substrate is placed on the substrate to be processed, which has been completely processed by the liquid processing apparatus.
Is prevented from touching the transfer means. A liquid processing system according to a fifth aspect is the liquid processing system according to any one of the first to fourth aspects, wherein the first
Is disposed below the second liquid processing apparatus. In the liquid processing system according to claim 5, the first liquid processing apparatus is disposed below the second liquid processing apparatus. For example, a plating processing apparatus is disposed as the first liquid processing apparatus. By arranging the cleaning device as the second liquid processing device, it is possible to prevent the second liquid processing device from being contaminated by the atmosphere of the first liquid processing device. The liquid processing system according to claim 6 is the liquid processing system according to any one of claims 1 to 5, wherein the first transporting unit is configured to remove the object transferred from the first liquid processing apparatus. The liquid crystal display further includes a reversing function of reversing the processing substrate upside down and carrying the substrate into the second liquid processing apparatus. In the liquid processing system according to the sixth aspect, since the first transfer unit has a function of reversing the substrate to be processed, the first liquid processing apparatus can be quickly moved from the first liquid processing apparatus to the second liquid processing apparatus. The substrate to be processed can be conveyed. The liquid processing system according to claim 7, wherein the liquid processing system according to any one of claims 1 to 6, wherein the liquid processing system performs the liquid processing before or after the liquid processing in the first liquid processing apparatus. A third liquid processing apparatus for performing the third liquid processing is further provided. In the liquid processing system according to claim 7, the third liquid processing is performed by a third liquid processing system.
Since the liquid processing apparatus is further provided, a third liquid processing of a different type can be performed in addition to the first liquid processing apparatus and the second liquid processing apparatus. The liquid processing system according to claim 8 is the liquid processing system according to any one of claims 1 to 7, wherein the substrate to be processed after being subjected to the liquid processing by the first liquid processing apparatus is heated. A heating device for applying a ring is further provided. The liquid processing system according to claim 8, further comprising a heating device for performing a heating process on the substrate to be processed after being subjected to the liquid processing in the first liquid processing apparatus, so that the heating device is formed on the substrate to be processed, for example. A heat treatment such as an annealing treatment for modifying the copper plating layer can be performed. A liquid processing system according to a ninth aspect is the liquid processing system according to any one of the first to eighth aspects, further comprising an exhaust unit configured to reduce the pressure inside the system to a pressure lower than the pressure outside the system. It is characterized by the following. In the liquid processing system according to the ninth aspect, since the system further includes an exhaust means for reducing the pressure inside the system to a pressure lower than the pressure outside the system, contaminated air flows out of the liquid processing system to the outside of the liquid processing system. This prevents contamination from spreading outside the system. A liquid processing system according to a tenth aspect is the liquid processing system according to any one of the first to ninth aspects, further comprising a temperature control unit that controls a temperature in the liquid processing system. I do. Claim 1
The liquid processing system of No. 0 further includes a temperature control means for controlling the temperature in the liquid processing system, so that the temperature rise in the system can be suppressed, thereby preventing the generation of mist of the processing liquid. be able to. Claim 11
The liquid processing system according to any one of claims 1 to 10, wherein a second gas supply unit that supplies a purified gas into the first liquid processing apparatus. Is further provided. In the liquid processing system according to claim 11, since the first liquid processing apparatus further includes a second gas supply unit that supplies a purified gas, the inside of the first liquid processing apparatus is controlled. You can always keep a clean atmosphere. A liquid processing system according to a twelfth aspect is the liquid processing system according to any one of the first to eleventh aspects, wherein the first liquid processing apparatus can maintain an internal atmosphere in a substantially airtight state. It is characterized by having a configured box. In the liquid processing system according to the twelfth aspect, the first liquid processing apparatus has a box configured to maintain the internal atmosphere of the first liquid processing apparatus in a substantially airtight state. Contamination of the external atmosphere can be prevented. The liquid processing system according to claim 13 is the liquid processing system according to any one of claims 1 to 12, wherein the first liquid processing device is provided in a space that houses the first liquid processing device. And a temperature control means for controlling the temperature of the first control means. In the liquid processing system according to claim 13, the first
Since the liquid processing apparatus of (1) includes temperature control means for controlling the temperature in the space accommodating the first liquid processing apparatus,
Mist can be prevented from being generated. A liquid processing system according to a fourteenth aspect is the liquid processing system according to any one of the first to thirteenth aspects, wherein the first liquid processing apparatus and the second liquid processing apparatus are independent of each other. Characterized in that a detachable unit is formed. In the liquid processing system according to the fourteenth aspect, the first liquid processing apparatus and the second liquid processing apparatus are disposed so as to be detachable from the liquid processing system. The efficiency of maintenance management is improved. In addition, since the first liquid processing apparatus and the second liquid processing apparatus form independent units, when the processing capacity of one unit is reduced and it becomes necessary to replace the unit, another operation is performed. Can proceed with the unit. The liquid processing method according to claim 15, wherein the first liquid processing apparatus is configured to be capable of storing a first processing liquid containing at least metal ions, and the processing target that has been subjected to the liquid processing by the first liquid processing apparatus. The second
A second liquid processing apparatus for performing the liquid processing described above, and a first transfer unit configured to transfer a substrate to be processed between the first liquid processing apparatus and the second liquid processing apparatus. A liquid processing method performed by using a liquid processing system provided, wherein a substrate to be processed, which has been processed by a first liquid processing apparatus, is transferred to the second liquid processing apparatus using the first transport unit. When transporting,
The substrate is transported in a state where the surface of the substrate has moisture attached thereto. In the liquid processing method according to claim 15, when the substrate to be processed processed by the first liquid processing apparatus is transferred to the second liquid processing apparatus using the first transfer means, Since the substrate is transported with moisture attached to the surface of the substrate, the processing of the first liquid processing apparatus attached to the substrate to be processed during the transportation from the first liquid processing apparatus to the second liquid processing apparatus The liquid is prevented from drying and forming particles. 17. The liquid processing system according to claim 16, wherein the first liquid processing apparatus is configured to be capable of storing a first processing liquid containing at least metal ions, and the liquid processing apparatus has been subjected to the liquid processing by the first liquid processing apparatus. A second liquid processing apparatus for performing a second liquid processing on the substrate; and a first liquid processing apparatus configured to be capable of transporting the substrate to be processed between the first liquid processing apparatus and the second liquid processing apparatus. A liquid processing system comprising: a first liquid processing apparatus, the first liquid processing apparatus comprising:
Carrying out the liquid processing, and carrying out the substrate to be processed from the first liquid processing apparatus by the first transfer means.
Carrying out the second liquid processing on the processing surface of the substrate to be processed and the other surface in the second liquid processing apparatus; The substrate to be processed is turned over after unloading the substrate to be processed from the liquid processing apparatus or before loading the substrate to be processed into the second liquid processing apparatus. Claim 16
In the liquid processing method, since the substrate to be processed is inverted after the substrate to be processed is unloaded from the first liquid processing apparatus or before the substrate to be processed is loaded into the second liquid processing apparatus, The substrate to be processed can be transported quickly.

DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment)
The plating system for copper plating according to the first embodiment of the present invention
The stem will be described. FIG. 1 shows a message according to this embodiment.
FIG. 2 is a perspective view of a plating system, and FIG.
FIG. 3 is a plan view of the stem, and FIG.
FIG. 4 is a front view, and FIG. 4 is a side view of the plating system.
is there. As shown in FIG. 1 to FIG.
The system 1 is a carrier for transferring wafers W in and out and carrying them.
Process for actually processing the station 2 and the wafer W
Station 3. Career staple
2 is a mounting table 21 for accommodating the wafer W and on the mounting table 21.
Access the carrier cassette C placed in the
The wafer W contained in the wafer is taken out or the processing is completed.
A sub as a second transfer means for accommodating the wafer W or the like
And an arm 22. Carrier cassette C
A plurality of wafers W, for example, 25 wafers W
It is housed vertically with it kept flat
You. For example, four carriers are mounted on the mounting table 21 in the X direction in the figure.
An cassette A is provided. The sub arm 22 is shown in the figure.
Moving on the rails arranged in the X direction and vertical
Up and down in the direction (Z direction), that is, the direction perpendicular to the paper
It has a structure that is rotatable in the horizontal plane.
To access the carrier cassette C placed in the
Removal of the processing wafer W from the carrier cassette C,
Store processed wafers W in carrier cassette C
It is supposed to. This sub arm 22 will be described later.
Before and after processing with the process station 3
Eha W is to be delivered. Process
3 is a rectangular parallelepiped or a cube as shown in FIGS.
With a box-shaped exterior, the entire periphery of which is corrosion resistant
Material, for example resin or metal whose surface is coated with resin
It is covered with a housing 31 made of a plate or the like. Process
The inside of the station 3 is substantially as shown in FIGS.
It has a cubic or rectangular box shape,
Has a processing space S formed therein. The processing space S is shown in FIG.
As shown in FIG. 4, the processing chamber is a rectangular parallelepiped processing chamber and has a processing space.
A bottom plate 33 is attached to the bottom of S. Processing space
S has a plurality of processing units, for example, four plating processes
The units M1 to M4 are, for example, in the processing space chamber S.
Around the main arm 35 to be
You. As shown in FIG. 1 and FIG.
Main as first transfer means for transferring wafers
An arm 35 is provided. This main arm 35
It can be moved up and down and rotatable in the horizontal plane.
Equipped with upper and lower two wafer holding members that can expand and contract in the horizontal plane
By expanding and contracting these wafer holding members,
Processing unit disposed around the main arm 35
Wafer W before and after processing can be taken in and out
ing. The main arm 35 moves vertically and moves up.
It is also possible to enter and exit the processing unit on the side,
The wafer is transferred from the lower processing unit to the upper processing unit.
C to carry the w, or vice versa
The wafer W to the processing unit on the side
Has become. Further, the main arm 35 holds the held wafer.
A function to invert W up and down is provided.
During transfer of the wafer W from the cartridge to another processing unit.
It has a structure that allows the eha W to be turned upside down. This c
The function to invert the Eha W is an essential machine for the main arm 35
No. On the upper side, another processing unit such as the second
Cleaning unit (SRD) 70 as a liquid processing apparatus
Is, for example, the side close to the two carrier stations,
The plating units M1 and M2 are respectively disposed above the plating units M1 and M2.
Have been. In this way, multiple processing units
The multi-stage arrangement increases the area efficiency of the liquid treatment system.
Can be improved. C of process station 3
Facing the carrier station 2 in the housing 31
The housing 31a disposed at the position shown in FIG.
So that three openable and closable openings G1 to G3 are provided.
I have. Among these, G1 is a plating process disposed on the lower side.
Mounting table 3 disposed between the logical units M1 and M2
6 is an opening corresponding to the position of the carrier cassette C
The unprocessed wafer W taken out by the sub arm 22 from the
It is used when carrying into the process station 3. Carrying
Upon entry, the opening G1 is opened to hold the unprocessed wafer W
Sub-arm 22 places the wafer holding member in the processing space S.
Extend and access, place wafer W on relay mounting table 36
Good. The main arm 35 accesses the relay mounting table 36
Then, while holding the wafer W mounted on the relay mounting table 36,
In the processing units such as the plating units M1 to M4
Carry by. The remaining openings G2 and G3 are
Compatible with SRDs located near the rear station 2
The openings G2, G3
The sub-arm accesses the processing space S through the
The process is completed by directly accessing the SRD
The received wafer W can be received.
Therefore, the wafer W cleaned by the SRD becomes dirty.
To prevent contamination by touching the Also processing
In the space S, a downward airflow is formed from above in FIG.
Clean air supplied from outside the system
Supplied from the top of space S, cleaning unit, plating
It flows down toward the processing units M1 to M4, and the processing space S
Exhaust from bottom and out of system
ing. In this manner, the clean space in the processing space S is seen from top to bottom.
By flowing air, the lower plating unit M1
-No air flows from M4 to the upper cleaning device
Swelling. Therefore, the cleaning unit always
It is kept in a clean atmosphere. In addition, the plating unit
In each processing unit such as M1 to M4 and cleaning processing unit
Is maintained at a lower pressure than the processing space S of the system,
The air flow is directed from the processing space S side into each processing unit.
And is exhausted from each processing unit to the outside of the system.
Therefore, dirt spreads from the processing unit side to the processing space S side.
Scattering is prevented. FIG. 5 shows a plating unit M1.
FIG. As shown in FIG.
In the physical unit M1, the whole unit has a sealed housing
Ring 41. This housing 41 is also made of resin or the like.
It is made of corrosion-resistant material. Housing 41
The inside has a structure that is roughly divided into upper and lower stages, and exhaust
Of the separator 42 by the separator 42 having a built-in path.
The first processing unit A located on the upper side and the lower part of the separator 42
And the second processing section B located on the side
You. Therefore, the first processing unit on the upper side from the second processing unit B side
Dirt is prevented from diffusing to the part A side. Separator 4
2, a through hole 65 is provided at the center thereof.
Wafer held by a driver 48 described later via
W moves between the first processing unit A and the second processing unit B
I am able to do it. At the boundary between processing unit A and processing unit B
Opening and opening / closing this opening in the housing
A gate valve 66 is provided. This gate bar
When the lube 66 is closed, the inside of the plating unit M1 is
Because it is a space isolated from the processing space S on the side, plating
Spread of dirt from the processing unit M1 into the outer processing space S
Scattering is prevented. The plating units M1 to M4 are
Each can operate independently and independently, processing system
Are each configured to be detachable. That
During maintenance of one plating unit
If it cannot be operated, substitute another plating unit.
It can be replaced and maintenance can be easily performed. No.
The first processing unit A holds the wafer W substantially horizontally and rotates it.
A driver 48 as a substrate holding mechanism is provided.
You. The driver 48 includes a holding unit 49 for holding the wafer W.
And the wafer W together with the holder 49 is rotated in a substantially horizontal plane.
And a motor 50 to be driven.
A support beam 51 for supporting the driver 48 is attached to the hood.
Have been killed. The end of the support beam 51 is the inner wall of the housing 41
Can be moved up and down through the guide rail 52
Have been. The support beam 51 is further connected via a cylinder 53 to c.
The cylinder 53 is attached to the housing 41.
And the position of the driver 48 by driving the motor 50.
It can be moved up and down. Specifically, FIG.
As described above, the position of the driver 48 carries the wafer W in and out.
Position (I) for transfer and the surface to be processed on the lower surface side of the wafer W
Cleaning position (II) Spin dry described later
Spin dry position (III) for wafer and wafer W
Plating position where plating is performed while immersed in plating solution
(IV) Move up and down mainly between four different heights.
Note that only the wafer W is moved up and down inside the driver 48.
A lifting mechanism (not shown) is provided.
Changing the height of the driver 48 by activating the structure
Only the height of the wafer W can be changed inside the driver 48
Can be. The elevating mechanism contacts the outer peripheral edge of the lower surface of the wafer W.
Cathode contact to apply voltage by touching (not shown)
Activated when contacting and separating the contact called wafer
To clean the cathode contact, for example.
When the wafer W is lifted to expose the contact surface, the nozzle
Makes it easier to wash with water sprayed from. Second processing
In part B, a plating solution for copper plating, such as copper sulfate, is used.
A plating bath 54 for accommodating the plating bath is provided. Plating bath
54 has a double structure, and an outer tank is provided outside the inner tank 54a.
54b are disposed substantially coaxially. The plating bath 54
It is disposed directly below the driver 48 described above, and is plated.
When the inner tank 54a is filled with the solution, the level of the plating solution is
Held by the driver 48 stopped at the key position (IV).
Inner tank at a height where the level of the plating solution is higher than the wafer W
54a is fixed. Plating inside the inner tank 54a
An ejection pipe 55 for ejecting the liquid from the bottom toward the top is provided inside.
Approximately in the depth direction of the inner tank 54a from substantially the center of the bottom of the tank 54a
Electroplating around the spouting tube 55
An electrode 56 functioning as an anode during processing is provided.
I have. There is a gap between the outer periphery of the end of the ejection pipe 55 and the inner tank 54a.
A film 57 is provided, and is provided from the electrode 56 during electrolytic plating.
Foreign matter entering the surface of the plating solution rises to the plating solution
It is preventing from becoming. Eccentric from center of bottom of inner tank 54a
A circulation pipe 5 for circulating the plating solution
8, 59 are provided, and the pump is not shown.
The plating solution is circulated and the plating solution is sucked through the circulation pipe 59.
Is supplied from the circulation pipe 58. Outer tub 5
4b is a flow of the plating solution flowing between the inner tank 54a and the outer wall surface.
A path 62 is formed. Further, a channel is provided at the bottom of the outer tank 54b.
For returning the plating solution flowing into the inner tank 54a.
A pipe 61 is connected. This pipe 61 is the jet pipe
55 and a pump 60.
0, the water overflows from the inner tank 54a.
The plating solution flowing into the passage 62 and the pipe 61 is again supplied to the inner tank 54.
a and sprayed toward the surface to be processed on the lower surface side of the wafer W.
You can get out. The first processing section A
A mechanism that circulates a clean air flow like a room
It is arranged. That is, the top of the housing 41
1 for blowing air downward to the processing section A
An outlet 43 is provided.
An air supply pipe 44 for supplying air is connected.
You. The upstream side of the air moving method of the air supply pipe 44 is
Connected to the air passage 45 buried at the uppermost side in the
ing. Air is taken into the upper surface of the separator 42.
Air inlet 46 is formed in the first processing unit A
It is designed to take in the air that has flowed down. Also
In the middle of the air supply pipe 44, there is a fan for moving air.
Fan (not shown) and a compressor 47
And the air taken in through the air intake port 46 is supplied to the air supply pipe 4.
4 to the air outlet 43. To the air outlet 43
Is a filter 47 for removing dust and dirt from the air.
The separator 42 is provided from the air outlet 43.
The inside of the first processing section A faces downward toward the air intake port 46
To form a downflow of clean air flowing through. This
Purify the air inside like this clean air
Flows downward in the figure to make the inside of the processing section A clean.
I keep it. On the other hand, a second process is provided below the separator 42.
The processing part is formed. The second processing unit B is provided with the first processing unit
Is a space formed separately and independently from the processing section A of the first embodiment.
The air flowing through the processing section A of the second flowed into the second processing section B
As a result, the air of the second processing unit B flows into the first processing unit A.
Never. In this way, the space from the processing unit B side to the processing unit A side is empty.
A clean atmosphere in the processing section A by preventing air from flowing
I keep it. An exhaust port 64 is provided below the separator 42.
It is arranged. This exhaust port 64 is connected to an exhaust system (not shown).
Connected to the air in the second processing section B.
This exhaust port 64 sucks fine particles of the liquid and exhausts it.
It is discharged out of the plating system. Process like this
Fine particles contained in the air in part B are removed from the plating system
To the plating process unit and the plating process.
Maintains a clean atmosphere in the physical system. Separee
Of the through hole 65 through which the driver 48 enters and exits.
A plurality of cleaning nozzles 162, 162,...
And facing the lower surface of the wafer W stopped at the cleaning position.
Then, for example, pure water is spouted for cleaning.
Note that a horizontal air curtain is
It is also possible to form For example, the separator 42
While blowing clean air from one side of the
Pass through the top of the plating bath 54 by providing an intake port on the opposite side of
How to suck in the air that has come and exhaust it out of the system.
No. Thus, at the boundary between the processing unit A and the processing unit B,
By forming an air curtain, the plating bath 54
The mist containing these plating solutions diffuses to the processing section A side.
Can be prevented. Also, this plating unit
A temperature control device and a humidity control device should be
Both are possible. In that case, the plating unit M1
It is controlled to maintain a predetermined temperature and humidity inside
This prevents the generation of mist such as plating solution.
The air in the plating unit M1 is contaminated.
Preventing. 6 and 7 show a cleaning process according to this embodiment.
Vertical diagram schematically showing the structure of the logical unit (SRD) 70
It is sectional drawing. In this cleaning processing unit 70, a substantially rectangular parallelepiped
A fixed cup 72 is disposed in a box-shaped housing 71 of
The rotating cup 73 and the lifter 7 are provided inside the fixed cup 72.
4 is provided. In the housing 71
Are the opening 75 facing the main arm 35 and the sub
An opening 77 facing the arm 22 is provided.
Gate bars for opening and closing the respective openings 75 and 77
Lubes 76 and 78 are provided respectively. These games
By closing the heat valve, the cleaning processing unit 70
It is shut off from the processing space S,
So that dirty air does not diffuse into the processing space S outside
It has become. Also, in this cleaning processing unit 70,
Pressure control to keep the pressure more negative than outside, temperature
A device for controlling humidity and humidity may be provided. Internal pressure
By keeping the force at a negative pressure from the processing space S, the cleaning process
Contamination is prevented from spreading from the knit 70 to the outside.
You. In addition, by controlling temperature and humidity, contamination sources are included.
The generation of mist is prevented. The rotating cup 73 is
C to rotate while holding W
By supplying the cleaning liquid to the upper and lower surfaces of the wafer W, the wafer W
Wash. The side wall of the rotating cup 73 is shown in a small circle in FIG.
As described above, the chuck member 92 is inclined,
When the rotating cup 73 is stationary, as shown in the small circle A, the tip
92a is detachable from the outer peripheral edge of the wafer W to attach and detach the wafer W
When the rotating cup 73 rotates, it is indicated by a small circle B.
As described above, the distal end portion 92a moves the outer peripheral edge of the wafer W by centrifugal force.
Press inward in the radial direction to firmly secure. Again
An edge remover 101 is provided above the transfer cup 73 with a rotating power.
Water in the radial direction of a circle centered on the rotation axis 100 of the
It is designed to move flat and to the edge remover 101
The outer peripheral edge of the sandwiched wafer W is cleaned. That is, FIG.
As shown in the above, when cleaning the outer peripheral edge of the wafer W,
Edge remover 10 is applied to wafer W lifted by lifter 74.
Are sandwiched in close proximity to the outer peripheral edge of the wafer W,
Hydrofluoric acid water is supplied from piping 103 arranged inside.
On the other hand, suction by another pipe 104
Clean the periphery. 8 and 9 according to the present embodiment.
Plan view and sectional view showing the configuration of the annealing unit
It is. In FIG. 8, the horizontal shielding plate 11 is illustrated for illustration.
2 is omitted. Processing room of this annealing unit
110 is formed by both side walls 111 and a horizontal shielding plate 112.
And the front side (main arm 35 side) of the processing chamber 110 and
And the back side are openings 110A and 110B, respectively.
I have. A circular opening 113 is formed at the center of the shielding plate 112.
In the opening 113, a disc-shaped susceptor 120 is provided.
Is provided. The susceptor 120 has three through holes, for example.
121 are provided, and a support pin 12 is provided in each through hole 121.
2 is inserted in a loose fit state, and the loading of the wafer W is performed.
During loading and unloading, each support pin 122
Project above or rise above the surface of the
Transfer of the wafer W to and from the holding member 35a of the
It is supposed to do. On the outer periphery of the susceptor 120,
A large number of ventilation holes 124 are formed at intervals of 2 ° in the circumferential direction.
A shutter 126 made of a ring-shaped strip formed is provided.
Have been. The shutter 126 is normally provided with the susceptor 12.
Although it is retracted to a position below 0, such as annealing
During heat treatment, as shown in FIG.
Susceptor 120 and cover body
A ring-shaped side wall is formed between
Air and nitrogen gas from the body supply system
Inert gas such as gas flows evenly in the circumferential direction from the ventilation holes 124.
It is made to enter. In the center of the cover 128
Discharges gas generated from the surface of wafer W during heat treatment
Exhaust port 128a is provided for the exhaust port 128a.
Is connected to an exhaust pipe 130. This exhaust pipe 130
Is a duct on the front side of the apparatus (the side of the main arm 35)
(Omitted). Under the shielding plate 112, the shielding plate 1
12, machine room 1 by both side walls 111 and bottom plate 114
A susceptor support plate 11 is formed in the chamber.
6, shutter arm 117, support pin arm 118,
Cutter 119 for raising and lowering the arm, supporting pin arm
A cylinder elevating drive cylinder 125 is provided. In FIG.
As shown, the susceptor 1 on which the outer peripheral edge of the wafer W is to be placed
A plurality of, for example, four wafer W guide supports
A holding projection 131 is provided. Inside the susceptor 120
Is equipped with an electric heater (not shown) such as a nichrome wire.
The susceptor is heated by heating this electric heater.
120 is maintained at a predetermined temperature. FIG.
Is a flow chart showing the flow of the entire plating system
It is. As shown in FIG.
Start up the processing system and place the unprocessed
Carrier in which one lot, for example, 25 wafers W are stored
Place the cassette C using a transfer robot (not shown)
Then, the unprocessed wafer W is set in the sub arm 22.
Move to the front of carrier cassette C and
Insert the EHA holder 22a into the carrier cassette C
Take out the unprocessed wafer W accommodated in the
The wafer W is placed in the relay mounting table 3 in the process station.
6 is once placed. In addition, the alignment near the mounting table 21
A device for adjusting the alignment (not shown)
Adjust the direction (alignment) of the wafer W with the
After that, the wafer W is placed on the sub arm 22 and the relay mounting table 36.
You may make it convey. Unprocessed on relay mounting table 36
When the processing wafer W is mounted, the main arm 35
Recognizes the placement of W and starts operation, and
Access is made up to this point to receive the unprocessed wafer W. Unprocessed
The main arm 35 that has received the processing wafer W is now processed
Plating unit disposed on the lower side of space S, for example
If the plating unit M1 is accessed,
The unprocessed wafer W is loaded into the processing unit M1. Less than
Below, the processing flow in the plating unit M1 is described.
11 and FIGS. 13 to 24 will be described. FIG.
1 is a plating process performed in the plating unit M1
12 is a flowchart illustrating the flow of FIG.
23 is a view schematically showing each step of the plating process.
The main unit that receives the unprocessed wafer W from the relay mounting table 36
Arm 35 accesses the plating unit M1.
You. That is, in the plating unit M1, the gate valve 6
6 is opened and the main arm is held while holding the unprocessed wafer W.
The program 35 enters the first processing section A, as shown in FIG.
The driver 48 waiting at the transfer position (I) has not been processed.
The control wafer W is delivered (step 2 (1)). In addition,
At this time, the plating bath 54 is filled with the plating solution until it becomes full.
Add At this time, the inside of the plating unit M1 is processed.
Since the pressure is maintained at a lower pressure than in the space S, the gate valve
Even if 66 is opened, the air is still plated from the processing space S side.
It flows into the knit M1 and the plating unit M1
The mist containing the plating solution flows out to the processing space S side and becomes dirty.
The dye is not diffused. Dry unprocessed wafer W
After setting in the holding portion 49 of the bus 48, the gate valve
66 is closed, and the cylinder 53 is driven to drive the cylinder 53 as shown in FIG.
Lower the driver 48 to the plating position (IV)
(Step 2 (2)). This lowering operation causes the holding portion 49
The processing surface on the lower surface side of the wafer W held by the plating bath 5
4. Contact with the plating liquid level in 4, but in contact with this liquid level
At this time, air bubbles are easily formed on the surface of the wafer W. Air bubbles
When plating is performed with the wafer adhered to the surface of the wafer W
The plating layer formed on the surface of the wafer W becomes non-uniform.
Then, as shown in FIG. 14, the wafer W is
The motor 50 of the driver 48 is operated in the contact state.
The wafer W in a substantially horizontal plane
Defoaming of the W surface is performed (step 2 (3)). Defoamer
When the motor 50 is
The rotation speed is reduced, and the wafer W and the anode in the plating bath 54 are removed.
To start plating by applying a voltage between the
Step 2 (4)). After a certain time, plating of sufficient thickness
Once the layer is formed on the wafer W, stop applying the voltage
Stop formation of plating layer, open valve V1 and pump
Activate the discharge pump 67 to put the plating solution into the tank 68
And lower the liquid level in the plating bath 54 as shown in FIG.
(Step 2 (5)). Raise the holder and
The wafer W is moved to the spin dry position (III).
In this state, the motor 50 is operated to move the wafer W in the horizontal plane.
And spin dry (Step 2)
(6)). Plating solution from wafer W by spin drying
When most of the driver 4 is removed, as shown in FIG.
8 to the washing position (II) described above (step
Step 2 (7)). Next, as shown in FIG.
Nozzle 50 while driving wafer 50 to rotate wafer W.
Pure water is spouted from 62, 162,.
Then, the lower surface of the wafer W is cleaned (Step 2 (8)). C
When the cleaning of the lower surface of the Eha W is completed, as shown in FIG.
The height of the driver 48 is maintained, and an elevator (not shown)
Only the wafer W in the driver 48 is slightly raised
The pure water spouted from the nozzles 162 and 162
This is a contact point between the lower surface of the wafer W and the holding unit, and is electrically connected.
Up to the height of the cathode contact (not shown)
Raise it. In this state, the nozzles 162, 162,.
Cleaning the cathode contact surface by squirting water
(Step 2 (9)). Cleaning of cathode contact is complete
Upon completion, the wafer W is again brought into contact with the electrical contacts as shown in FIG.
Lower to the contact height (FIG. 20, step 2 (1
0)), as shown in FIG.
Remove water by pin drying (Step 2 (1
1)). When the spin dry is completed, as shown in FIG.
Then, raise the driver 48 to the transport position (I) (step
2 (12)), as shown in FIG.
Open the gate valve 66 while holding the main arm 35
And the processing in the plating unit M1 is completed.
The unloaded wafer W is carried out (step 2 (13)). The foam
When the wafer W comes in contact with or separates from the plating solution during punching or plating
Plating solution during spin dry, washing, etc.
The plating bath 54 is scattered outside
The air in the processing section B is constantly exhausted during the processing time.
Therefore, the plating solution scattered from the plating bath 54 is mixed with air.
Both are exhausted, and the processing part B is filled with plating solution mist.
Or plating from processing part B to processing part A or processing space S side
The mist containing the liquid does not diffuse. Note that the above
In the subsequent spin-drying, the wafer W is not completely dried.
The plating process unit M
The state in which the surface of the wafer W is slightly wet with water even when the wafer W is unloaded from
To be transported. As a result, the wafer W dries and
The generation of particles on the surface of the wafer W is prevented.
The plating process in the plating unit M1 has been completed.
Transfer the wafer W to the processing unit that performs the subsequent processing
I do. For example, the composition is different from the plating unit M1.
Other plating units M2 to M using plating solutions
When performing another plating process in step 4,
Into the processing units M2 to M4 and
A subsequent plating process is performed. Plating unit M
1 to other subsequent processing units, for example, a plating unit
M2 to M4 and a cleaning unit as a second processing unit.
During transfer to a knit, etc., the wafer W may be
Upside down while being held by the arm 35. For example,
The plating layer is formed on the lower surface side of the wafer W by the processing unit M1.
After formation, the surface where the plating layer was formed by the cleaning unit
For example, and cleaning. Thus the wafer
The wafer W is turned upside down on the main arm 35 during the transfer of W
Since there is no waste in the process,
The transport of W and the upside-down can be performed simultaneously. one
When the plating process is completed, the last plating process
The main arm 35 accesses the knits M1 to M4
The wafer W after the plating process is taken out. After a while
The main arm 35 holds the wafer W while holding the same.
35a is moved to the upper part of the processing space S, and the plating unit
Cleaning unit installed on the upper side of
It is carried into the cassette 70. At this time, the processing space S
Down where clean air flows downward from above
Since the flow is formed, the lower plating unit
The cleaning processing unit 70 in the upper stage from the units M1 to M4
No air flows to the side. Therefore, in the processing space S
The atmosphere near the cleaning unit 70 is always plated.
The atmosphere is kept cleaner than the atmosphere near the units M1 to M4.
Hereinafter, the inside of the cleaning processing unit 70 as the second processing apparatus will be described.
The cleaning process performed in the step will be described. FIG. 24 shows the cleaning process.
A flow chart showing the flow of the cleaning process performed in the unit 70.
5 is a chart (flow chart 3). Plating process
Holder of main arm 35 holding completed wafer W
35a is close to the main arm 35 of the cleaning unit 70.
When approaching the other gate valve 76, the gate valve 7
6 is opened and the opening 75 of the housing 71 appears. This
The main arm 35 through the opening 75 of the cleaning unit.
The wafer W is lifted by the lift plate of the lifter 74.
Proceed to the position just above 93. In this state, the lifter 74
When the lift plate 93 moves up and moves,
The lift plate 93 receives the wafer W from the holding unit 35a.
(Step 3 (1)). In this state, the main arm 35
When the holding portion 35a is pulled in, the main arm 35 is washed.
Loading of the wafer W into the processing unit 70 is completed. Ue
When the wafer W is loaded, the gate valve 76 is opened.
The inside of the processing unit 70 is more negative than the processing space S outside thereof.
From the inside of the cleaning processing unit 70
Air flows out to the space S side, and dirt diffuses to the processing space S side.
Never. The main arm 35 is the cleaning unit 7
0, the lift plate 93 further rises and
Upper member 103 and lower member 104 of the jig remover 101
(Step 3)
(2)). In this state, the edge remover 101 moves the wafer W
And moves closer to the center of the wafer W (step
Step 3 (3)). Edge remover 101 is outside wafer W
When approaching the position to sandwich the peripheral edge, use the edge remover.
101 is stopped, and the lower member 104 is turned obliquely outward.
The cleaning liquid from the buried pipe
Suction is performed by a pipe buried in the material 103. Riff in this state
When the heater 74 is rotated, the cleaning liquid is supplied only to the edge of the wafer W.
So that a so-called edge cleaning is performed (step
3 (4)). A hanging that schematically depicts the state of this edge cleaning
FIG. 7 is a straight sectional view. Once edge cleaning is completed,
Stop the rotation of the lid 74, and place the edge remover 101 on the wafer.
Move radially outward of W and separate from wafer W
(Step 3 (5)). Next, lower the lifter 74 to the bottom.
Down and housed in the rotating cup 73 (step 3
(6)). When the lifter 74 is lowered,
The wafer W placed on the upper part is the upper opening of the rotating cup 73.
(Step 3)
(7)). However, as described above, the rotation cup 73 side
A plurality of chuck members 92 arranged on the wall portion
In the state before the step, as shown in the small circle A in FIG.
The outer peripheral edge of the wafer W is pressed.
There is no such movement. Therefore, on the rotating cup 73
The held wafer W is only placed on the end,
If a vertical upward force acts on the lid 74,
It can be lifted. Next, the wafer W
Shower placed above wafer W while rotating pump
Pure water is supplied from a nozzle (not shown) to clean the upper surface of the wafer W.
Wash with pure water (Step 3 (8)). At this time,
The chuck member 92 is turned into a small circle B in FIG.
The upper part is tilted inward as shown in
Wafer W exerts a radially inward pressing force by the tip of material 92.
Therefore, the wafer W is firmly fixed to the rotating cup 73.
Is determined. When the pure water cleaning of the upper surface of the wafer W is completed,
Stop the water injection from the work nozzle, and then lifter 7
4 is supplied with a cleaning liquid. This cleaning liquid is contained in the lifter 74.
Through the through-holes 93a, 93a,
Are supplied to the lower surface side of the wafer W through the cleaning liquid.
The lower side of the wafer W is further cleaned with a chemical solution (step
3 (9)). When the chemical cleaning of the lower surface of the wafer W is completed,
The supply of the cleaning liquid to the lid 74 is stopped.
Rotating the tip 73 at a high speed to remove the washing liquid and water.
A so-called spin dry is performed (step 3 (10)).
When the spin drying is completed, the rotation of the rotating cup 73 is stopped.
Stop, lifter 74 is raised, and wafer W that has been
Is lifted to the transport position (step 3 (11)). This
Here, in the cleaning operation, the cleaning is performed in the cleaning processing unit 70.
Although water and cleaning liquid are scattered, the inside of the cleaning processing unit 70 is constantly
Exhaust air outside the system,
The cleaning solution is discharged out of the system together with the air, and the cleaning process is performed.
The inside of the unit 70 is filled with the mist of the washing water or the washing liquid scattered.
These mist will not be filled
Diffusion into the processing space S outside of 70 is also prevented.
In this state, the game on the main arm 35 side of the housing 71 is
The valve 76 is opened. Open and open gate valve 76
After the part 75 appears, the main arm 35 is cleaned.
The main arm 35 and the holding portion 35a of the main arm 35.
Is extended to the lower side of the lift plate 93 that lifts the wafer W.
Let Then, when the lifter 74 is lowered, the wafer W
It is delivered from the lift plate 93 to the main arm 35 side.
Next, the main arm 35 holding the wafer W is washed.
By removing the wafer W from the cleaning unit 70,
Is carried out (step 3 (12)). Cleaning process
When the cleaning processing by the unit 70 is completed, the subsequent processing
For example, an annealing process as a third process is performed.
U. This annealing process is performed by placing the wafer W on a so-called hot platen.
For a predetermined time. In reality, Figure 8 and
A heat treatment unit as a third treatment unit as shown in FIG.
Place the wafer W on the knit susceptor 120 for a predetermined time
By doing That is, when placing the wafer W
Main arm holding wafer W directly above susceptor 120
Lift pin 1 with holding portion 35a of
22 raises the heat from the main arm 35 side.
Transfer to processing unit side, main arm from heat treatment side
To transfer the wafer W to the 35 side,
Make a delivery. After annealing is completed,
The arm 35 receives the processed wafer W, and the
36 or through the cleaning unit 70
Is transferred from the main arm 35 to the sub arm 22
You. The processed wafer W transferred to the sub arm 22 is
It is stored in the carrier cassette C through a path opposite to the above.
Then, a series of processing is completed. As explained above,
In the plating unit according to the embodiment, the process stay
Are arranged in multiple stages, and multiple processes are
Processing unit is installed, so that
The plating process with high area efficiency
Management system can be provided. Further, the processing space S
In which the plating units M1 to M4 are closed
And housed in the jing 41 for independent airflow.
Each plating process is kept in an isolated atmosphere
The processing atmosphere does not interfere with each other between the units.
Therefore, many plating units are installed in a narrow processing chamber.
It can be installed to increase the area efficiency of the system.
Wear. In addition, the atmosphere where each plating unit is isolated
The plating solution with different composition is stored.
Adjacent to the plating unit using the key bath
Various plating processes in a small space
be able to. Furthermore, within each plating unit,
The inside of the knit is roughly divided into upper and lower processing units, and a plating bath
Is disposed on the lower side, and the second processing unit B is disposed on the upper side.
The first processing section A is provided with an opening for conveyance, and
Processing section A is clean by circulating
The wafer W in this clean atmosphere.
I did it. On the other hand, an environment where the plating solution is
The first processing unit B is confined in the second processing unit B below the
The air flow is circulated separately from the processing section A.
Therefore, the first processing unit A transfers the dirty particles from the second processing unit B to the second processing unit B.
There is no danger of mixing with children. In addition, the present invention
It is not limited to the form. For example, in the above embodiment, the wafer W
Although only one side is plated,
A liquid treatment tank is arranged,
Different processing is performed on the front and back surfaces of the wafer W
You can also. Further, the first processing section A contains fine particles.
Although the structure only has a filter to be removed,
Chemical fill to remove acids, organics and alkali ions
May be provided or provided side by side. Change
In addition, nitrogen gas is added near the loading / unloading port of each of the above processing units.
Alternatively, an air curtain may be formed by using an air curtain. Also, the first
Flow circulating through the processing chamber A and the second processing chamber B
The air may be an airflow with controlled temperature and humidity.
No. Further, the main arm 35 moves the wafer W during the transfer.
May have the function of reversing the upper and lower surfaces of
No. In the above embodiment, the upper side of the processing space S
In addition to the cleaning unit as the second processing unit,
When an annealing unit as a processing device is installed
Was explained, but processing other than the annealing unit
Unit, for example, surface treatment of wafer W before plating
Pre-processing unit for processing and processing wafers W after plating
The post-processing unit to be installed as the third processing device
Good. Further, in the above embodiment, the wafer W is described as an example.
However, the present invention provides a plating system for an LCD glass substrate.
It can also be applied as a stem. In the above embodiment, the menu is
Although the jack processing unit is arranged on the lower side,
If it is a processing unit that performs processing in the phase,
Needless to say, processing units other than knits can be used.
Nor. (Second Embodiment) Hereinafter, a second embodiment of the present invention will be described.
The plating system will be described. This implementation
In the plating system according to the embodiment, the first embodiment
The description of the same content as the form is omitted. This implementation
In the plating system according to the form, the upper side of the processing space
Has a structure in which only the cleaning processing unit 70 is provided,
The unloading of the wafer W after the completion of the cleaning process is performed by the sub arm 22.
Directly accesses the inside of the cleaning processing unit 70 to
Is carried out. With such a configuration,
And the cleaned wafer W after the cleaning process is completed.
Without passing through the lower side of the processing space S which is easily contaminated again.
Since it is delivered to the sub arm 22, it is processed when unloading.
There is no concern that dirt will adhere to the subsequent wafer W
The effect of is obtained.

According to the liquid processing system of the present invention, the first
And the second liquid processing apparatus are arranged in multiple stages, so that the area efficiency is improved, the area occupied by the liquid processing apparatus in the semiconductor manufacturing equipment is reduced, and the semiconductor manufacturing cost is reduced. can do. Further, by controlling the atmosphere in the system and the liquid processing unit, contamination of the liquid processing atmosphere can be prevented, and the yield of semiconductor products can be improved by lowering the defect rate. Further, since the maintenance management is easy, the stop time of the apparatus at the time of maintenance and inspection can be reduced as much as possible, and the throughput is improved.

[Brief description of the drawings]

FIG. 1 is a perspective view of a plating system according to the present invention.

FIG. 2 is a plan view of a plating system according to the present invention.

FIG. 3 is a front view of a plating system according to the present invention.

FIG. 4 is a front view of a plating system according to the present invention.

FIG. 5 is a vertical sectional view of a plating unit according to the present invention.

FIG. 6 is a vertical sectional view of a cleaning unit (SRD) according to the present invention.

FIG. 7 is a vertical sectional view of a cleaning unit (SRD) according to the present invention.

FIG. 8 is a plan view of the annealing unit according to the present invention.

FIG. 9 is a vertical sectional view of the annealing unit according to the present invention.

FIG. 10 is a flowchart showing a flow of the entire plating system according to the present invention.

FIG. 11 is a flowchart showing a flow of a plating process performed in a plating unit.

FIG. 12 is a view schematically showing each step of a plating process.

FIG. 13 is a diagram schematically showing each step of a plating process.

FIG. 14 is a diagram schematically showing each step of a plating process.

FIG. 15 is a diagram schematically showing each step of a plating process.

FIG. 16 is a diagram schematically showing each step of a plating process.

FIG. 17 is a view schematically showing each step of a plating process.

FIG. 18 is a view schematically showing each step of a plating process.

FIG. 19 is a view schematically showing each step of a plating process.

FIG. 20 is a diagram schematically showing each step of a plating process.

FIG. 21 is a diagram schematically showing each step of a plating process.

FIG. 22 is a diagram schematically showing each step of a plating process.

FIG. 23 is a view schematically showing each step of a plating process.

FIG. 24 is a flowchart illustrating a flow of a cleaning process performed in the cleaning unit.

[Explanation of symbols]

W: Wafer (substrate to be processed), S: Processing space, M1 to M4: Plating unit (first liquid processing unit), 70: Cleaning unit (second liquid processing unit), 35: Main arm (No. Reference numeral 22 denotes a sub-arm (second transfer unit), reference numeral 21 denotes a mounting table, reference numerals G2 and G3 denotes gate valves, reference numeral 73 denotes a rotating cup, reference numeral 92 denotes a chuck member, reference numeral 74 denotes a lifter, reference numeral 101 denotes an edge remover, and reference numeral 47 denotes an filter.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) C25D 7/12 C25D 7/12 19/00 19/00 B H01L 21/288 H01L 21/288 E (72) Inventor Takenobu Matsuo 1-2-4, Machiya, Shiroyama-cho, Tsukui-gun, Kanagawa Prefecture In-house (72) Inventor Tameyasu Momozuka 1-2-41, Machiya, Shiroyama-cho, Tsukui-gun, Kanagawa Prefecture Tokyo Electron E-E Co., Ltd. In-house (72) Inventor Yasushi Yasuji Yagi 1-2-41, Shiroyama-cho Machiya, Tsukui-gun, Kanagawa Prefecture Tokyo Electron E-E Co., Ltd. In-house (72) Inventor Yoshiyuki Harima 1-chome, Shiroyama-Machiya, Tsukui-gun, Kanagawa No. 2 41 Tokyo Electron E.E., Ltd. In-house (72) Inventor Jun Yamauchi, Shiroyama Machiya, Tsukui-gun, Kanagawa Prefecture 1-2-141 Tokyo Electron E.E. Stock Company In-house (72) Inventor Hiromi Taniyama 1375, Nishishinmachi, Tosu-shi, Saga Prefecture Tokyo Electron Kyushu Co., Ltd. F-term (reference) 4K024 AA09 AB01 BA11 BB12 BC06 CA15 CA16 CB02 CB03 CB04 CB09 CB13 CB19 DA04 DB10 GA16 4M104 BB04 DD52 HH20

Claims (16)

[Claims] A first liquid processing apparatus configured to perform a first liquid processing on a substrate to be processed and to contain a first processing liquid containing at least metal ions; and the first liquid processing. A second liquid processing apparatus that performs a second liquid processing on the substrate to be processed that has been subjected to the liquid processing by the apparatus; and a processing target between the first liquid processing apparatus and the second liquid processing apparatus. A first transport unit configured to be able to transport a substrate and to be movable in a vertical direction, wherein the first liquid processing apparatus and the second liquid processing apparatus are arranged around the first transport unit. A liquid treatment system, wherein the liquid treatment system is arranged in multiple stages. 2. A first liquid processing apparatus configured to perform a first liquid processing on a processing surface of a substrate to be processed and to contain a first processing liquid containing at least a metal ion; A second liquid processing apparatus that performs a second liquid processing on the processing surface of the substrate to be processed that has been subjected to the liquid processing by the first liquid processing apparatus, and the other surface of the processing substrate; A first transfer unit configured to transfer a substrate to be processed between the first liquid processing apparatus and the second liquid processing apparatus and to be movable in a vertical direction; A liquid processing system, wherein a liquid processing apparatus and the second liquid processing apparatus are arranged in multiple stages around the first transfer means. 3. A first liquid processing apparatus configured to perform a first liquid processing on a substrate to be processed and to contain a first processing liquid containing at least metal ions, and the first liquid processing. A second liquid processing apparatus that performs a second liquid processing on the substrate to be processed that has been subjected to the liquid processing by the apparatus; and a processing target between the first liquid processing apparatus and the second liquid processing apparatus. A first transfer unit configured to transfer a substrate and to be movable in a vertical direction, wherein a first gas for supplying a purified gas into the liquid processing system is provided. Wherein the first liquid processing apparatus and the second liquid processing apparatus are arranged in multiple stages around the first transfer means, and wherein the second liquid processing apparatus comprises: It is characterized in that it is disposed upstream of the first liquid processing apparatus in the direction of movement of the clean air. Liquid processing systems that. 4. A first liquid processing apparatus configured to perform a first liquid processing on a substrate to be processed and to contain a first processing liquid containing at least a metal ion, and the first liquid processing. A second liquid processing apparatus that performs a second liquid processing on a substrate to be processed that has been subjected to the liquid processing by the apparatus; and a first liquid processing apparatus and a second liquid processing apparatus that are arranged in multiple stages. An adjoining and accessible first transfer unit, and at least a second transfer unit configured to be accessible to the second liquid processing apparatus, wherein the second liquid processing apparatus is provided. The substrate to be processed, which has been subjected to the liquid processing according to (1), is carried out of the second liquid processing apparatus only by the second transfer means. 5. The liquid processing system according to claim 1, wherein the first liquid processing device is disposed below the second liquid processing device. A liquid treatment system characterized by the above-mentioned. 6. The liquid processing system according to claim 1, wherein the first transport unit vertically moves the substrate to be processed unloaded from the first liquid processing apparatus. A liquid processing system, further comprising a reversing function of reversing and carrying the liquid into the second liquid processing apparatus. 7. The liquid processing system according to claim 1, wherein a third liquid is applied to the substrate to be processed before or after the liquid is processed by the first liquid processing apparatus. A liquid processing system further comprising a third liquid processing device for performing processing. 8. The liquid processing system according to claim 1, wherein a heating process is performed on the substrate to be processed after being subjected to the liquid processing by the first liquid processing apparatus. A liquid processing system, further comprising: 9. The liquid processing system according to claim 1, further comprising an exhaust unit configured to set the inside of the system to a pressure lower than the pressure outside the system. Liquid treatment system. 10. The liquid processing system according to claim 1, further comprising a temperature control unit that controls a temperature in the liquid processing system. . 11. The liquid processing system according to claim 1, wherein a second gas supply unit that supplies a purified gas into the first liquid processing apparatus is provided. A liquid processing system, further comprising: 12. The liquid processing system according to claim 1, wherein the first liquid processing apparatus comprises:
A liquid processing system comprising a box configured to maintain its internal atmosphere in a substantially airtight state. 13. The liquid processing system according to claim 1, wherein the first liquid processing apparatus comprises:
A liquid processing system, comprising: a temperature control unit that controls a temperature in a space accommodating the first liquid processing apparatus. 14. The liquid processing system according to claim 1, wherein the first liquid processing apparatus and the second liquid processing apparatus are independently detachable. A liquid processing system comprising a unit. 15. A first liquid processing apparatus configured to be able to store a first processing liquid containing at least metal ions, and a substrate to be processed that has been subjected to liquid processing by the first liquid processing apparatus. A second liquid processing apparatus for performing a second liquid processing; a first transfer unit configured to transfer a substrate to be processed between the first liquid processing apparatus and the second liquid processing apparatus; ,
A liquid processing method performed using a liquid processing system provided with: a substrate to be processed, which has been processed by a first liquid processing apparatus using the first transport unit, is processed by the second liquid processing apparatus. A liquid processing method, wherein the substrate is transported with moisture attached to the surface of the substrate to be transported. 16. A first liquid processing apparatus configured to be capable of storing a first processing liquid containing at least metal ions, and a substrate to be processed that has been subjected to liquid processing by the first liquid processing apparatus. A second liquid processing apparatus for performing a second liquid processing; a first transfer unit configured to transfer a substrate to be processed between the first liquid processing apparatus and the second liquid processing apparatus; ,
A liquid processing method performed by using a liquid processing system including: a step of performing a first liquid processing on a processing surface of a substrate to be processed in the first liquid processing apparatus; Means for unloading the substrate to be processed from the first liquid processing apparatus and loading the substrate into the second liquid processing apparatus by means; and, in the second liquid processing apparatus, the processing surface of the substrate to be processed and the other. Performing a second liquid treatment on the surface of the substrate, after unloading the substrate to be processed from the first liquid processing apparatus, or loading the substrate to be processed into the second liquid processing apparatus. A liquid processing method, wherein the substrate to be processed is inverted before the liquid is processed.