JP2001319919A - Method and apparatus for manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method and apparatus for manufacturing a semiconductor device, which can manufacture a semiconductor device without using a surface polishing equipment (CMP) which scrapes off the surface of a plated layer by mechanically polishing the surface. SOLUTION: In order to scrape off the surface of the plated layer formed relatively thick on a wafer W, such a mechanism is employed wherein the surface of the plated layer is chemically removed by supplying an etchant from a chemical nozzle 303 of a washing treatment unit (SRD) provided with the chemical nozzle 303 for special purpose for supplying an etchant, without mechanically polishing the surface polishing equipment (CMP).

Description

DETAILED DESCRIPTION OF THE INVENTION

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing technique, and more particularly, to forming a copper wiring layer by plating a substrate to be processed, such as a silicon wafer, or cutting this wiring layer. The present invention relates to a method for manufacturing a semiconductor device and the like and a processing apparatus used for the manufacturing.

2. Description of the Related Art Conventionally, semiconductor devices such as LSIs have been manufactured by forming thin layers of conductors, semiconductors, and insulators on a silicon wafer (hereinafter simply referred to as a "wafer"). At this time, since silicon, which is a material of a wafer as a substrate of a semiconductor device, is an insulator, a conductive layer such as copper is formed by plating or the like to form a wiring layer. More specifically, since fine irregularities are formed on the surface of the wafer, a barrier metal layer is first formed, and copper or the like is deposited thereon to form a conductor layer called a seed layer. By performing electrolytic plating through the layers, a plating layer to be a wiring layer is formed of copper. A thin copper layer is formed by shaving the resulting plating layer with a surface polishing apparatus called CMP as shown in FIG. 11, and various layers are formed using this layer to manufacture a semiconductor device. FIG. 11 is a schematic vertical sectional view of a surface polishing apparatus (CMP). This surface polishing apparatus includes a rotary table 202 that is horizontally rotated by a motor 221 via a vertical rotary shaft 222, a polishing cloth 203 that is a polishing layer attached to the surface of the rotary table 202, and a polishing target. The polishing apparatus includes a wafer holding unit 204 that holds a certain wafer W and makes contact with the polishing cloth 203 at a predetermined pressure, and a polishing liquid supply nozzle 205 that supplies a polishing liquid to the surface of the polishing cloth 203. The wafer holding unit 204 includes, for example, a vacuum chuck mechanism, and suction-holds the wafer W at a position displaced from the center of the rotary table 202 so that the surface to be polished faces down. The motor 241 rotates horizontally via a vertical rotation shaft 272. This motor 2
Reference numeral 41 is attached to an elevating body 246 that can be moved up and down via an elevating shaft 245 by an elevating unit 244 attached to a fixed plate 243. The polishing liquid supply nozzle 205 is configured to supply a chemical polishing material having a chemical polishing action from the polishing liquid supply source 267, for example, a polishing liquid containing a fluorine compound, for example, near the rotation center of the polishing pad 203. Have been.

However, this surface polishing apparatus (CMP) is a dedicated apparatus for mechanically polishing and removing a plating layer, and is incorporated in a system only for removing the surface. However, there is a problem that it takes time and labor such as manufacturing cost and maintenance management. Further, when this surface polishing apparatus (CMP) is installed outside the system, there is a problem that the occupied area of the semiconductor manufacturing apparatus becomes large, and the footprint and throughput are reduced. The present invention has been made to solve the above-mentioned conventional problems. That is, an object of the present invention is to provide a semiconductor device manufacturing method and a processing device capable of manufacturing a semiconductor device without using a surface polishing apparatus (CMP) for mechanically polishing and shaving the surface of a plating layer. I do.

According to a first aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: plating a substrate to be processed in a first processing apparatus to close fine irregularities on the surface of the substrate; A step of forming a plating layer covering the entire surface of the substrate, a step of transporting the substrate to be processed to a second processing apparatus, and a step of supplying an etching agent to the plating layer to etch back and remove an excess plating layer. And a step. In the method of manufacturing a semiconductor device according to claim 1, an etching agent is supplied to the plating layer to etch back and remove an extra plating layer.
It is possible to omit a mechanical polishing device dedicated to polishing as described above. 3. The processing apparatus according to claim 2, further comprising: means for rotatably holding the substrate to be processed; And a first nozzle for supplying a processing agent for removing the metal layer on the surface of the substrate to be processed to the surface of the substrate to be processed. 2 nozzles. The processing apparatus according to claim 2, further comprising a second nozzle for supplying a processing agent for removing a metal layer on the surface of the substrate to be processed, on the surface of the substrate to be processed, such as a surface polishing apparatus (CMP). A mechanical polishing apparatus dedicated to polishing can be omitted. A processing apparatus according to a third aspect is the processing apparatus according to the second aspect, further comprising means for detecting an end point of the metal layer to be removed. According to a third aspect of the present invention, there is provided the processing apparatus according to the second aspect, further comprising means for detecting an end point of the metal layer to be removed. Therefore, the final thickness of the plating layer, and thus, a high-quality semiconductor device can be manufactured with high yield.

DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) Hereinafter, a plating system for copper plating according to a first embodiment of the present invention will be described. FIG. 1 is a perspective view of the plating system according to the present embodiment, FIG. 2 is a plan view of the plating system, FIG. 3 is a front view of the plating system, and FIG. FIG. As shown in FIGS. 1 to 4, the plating system 1 includes a carrier station 2 for loading and unloading and transporting the wafer W, and a process station 3 for actually processing the wafer W. The carrier station 2 accesses the mounting table 21 for storing the wafers W and the carrier cassette C mounted on the mounting table 21 to take out the wafers W stored therein, and stores the processed wafers W. And a sub arm 22 as a second transfer means. Carrier cassette C
A plurality of, for example, 25 wafers W are accommodated in a vertical direction while being kept horizontally at equal intervals. For example, four carrier cassettes C are arranged on the mounting table 21 in the X direction in the figure. The sub arm 22 has a structure capable of moving on rails arranged in the X direction in the figure, ascending and descending in a vertical direction (Z direction), that is, a direction perpendicular to the plane of the paper in the figure, and rotatable in a horizontal plane. The user accesses the carrier cassette C placed on the carrier 21 to take out an unprocessed wafer W from the carrier cassette C,
The processed wafer W is stored in the carrier cassette C. The sub-arm 22 also transfers wafers W before and after processing to and from a process station 3 described later. The process station 3 has a rectangular or cubic box-shaped appearance as shown in FIGS. 1 to 4, and the entire periphery thereof is made of a corrosion-resistant material such as resin or a metal plate whose surface is coated with resin. The housing 31 is covered. The inside of the process station 3 has a substantially cubic or rectangular box-like configuration as shown in FIGS. 1 and 4, and a processing space S is formed inside. The processing space S is a rectangular parallelepiped processing chamber as shown in FIGS. 1 and 4, and a bottom plate 33 is attached to the bottom of the processing space S. In the processing space S, a plurality of processing units, for example, four plating units M1 to M4 are disposed around the main arm 35 described below in the processing space chamber S, for example. As shown in FIGS. 1 and 2, a main arm 35 as a first transfer means for transferring a wafer is disposed substantially at the center of the bottom plate 33. The main arm 35 is vertically movable and rotatable in a horizontal plane. The main arm 35 further includes two upper and lower wafer holding members that can expand and contract in a substantially horizontal plane. Wafers W before and after processing can be taken in and out of processing units disposed around 35. Further, the main arm 35 moves vertically so that it can enter and exit the upper processing unit.
The wafer W can be carried from the lower processing unit to the upper processing unit, and conversely, the wafer W can be carried from the upper processing unit to the lower processing unit. Further, the main arm 35 has a function of turning the held wafer W upside down, and has a structure capable of turning the wafer W upside down while transferring the wafer W from one processing unit to another processing unit. The function of reversing the wafer W is not an essential function of the main arm 35. On the upper side, another processing unit such as the second
Cleaning unit (SRD) 27 as a liquid processing device
Numerals 0 are disposed, for example, on the side closer to the two carrier stations, that is, above the plating units M1 and M2. Since the plurality of processing units are vertically arranged in multiple stages, the area efficiency of the liquid processing system can be improved. Of the housing 31 of the process station 3, a housing 31 a provided at a position facing the carrier station 2 is provided with three openable and closable openings G <b> 1 to G <b> 3 as shown in FIG. 3. Among these, G1 is an opening corresponding to the position of the relay mounting table 36 disposed between the plating units M1 and M2 disposed on the lower side, and the opening G1 is not removed by the sub arm 22 from the carrier cassette C. It is used when a processing wafer W is loaded into the process station 3.
At the time of loading, the opening G1 is opened, the sub-arm 22 holding the unprocessed wafer W extends the wafer holding member into the processing space S, accesses the processing space S, and places the wafer W on the relay mounting table 36. The main arm 35 accesses the relay mounting table 36, holds the wafer W mounted on the relay mounting table 36, and carries the wafer W into a processing unit such as the plating units M1 to M4. The remaining openings G2 and G3 are arranged at positions corresponding to the SRDs arranged on the side closer to the carrier station 2 in the processing space S, and these openings G2 and G3 are provided.
The sub-arm accesses the processing space S via 3, and can directly access the SRD disposed on the upper side to receive the processed wafer W. Therefore, it is possible to prevent the wafer W cleaned by the SRD from being contaminated by touching the dirty main arm. Also,
A downward airflow is formed in the processing space S from above in FIG. 4, and clean air supplied from outside the system is supplied from the upper part of the processing space S, and is supplied to the cleaning processing unit and the plating processing units M1 to M4. The gas flows downward, is exhausted from the bottom of the processing space S, and is exhausted outside the system. By flowing clean air through the processing space S from the top to the bottom, air does not flow from the plating units M1 to M4 on the lower side to the cleaning device on the upper side. Therefore, the cleaning processing unit side is always kept in a clean atmosphere. Further, the inside of each processing unit such as the plating units M1 to M4 and the cleaning unit is maintained at a lower pressure than the processing space S of the system, and the flow of air flows from the processing space S to the inside of each processing unit. The air flows from each processing unit to the outside of the system. For this reason, the diffusion of dirt from the processing unit to the processing space S is prevented. FIG. 5 is a vertical sectional view of the plating unit M1. As shown in FIG. 5, in the plating unit M1, the entire unit is covered with a housing 41 having a closed structure. The housing 41 is also made of a corrosion-resistant material such as a resin. Housing 4
The inside of 1 has a structure divided roughly into upper and lower two stages,
The separator 7 having a built-in exhaust path allows the separator 7
A first processing unit A located on the upper side of
And a second processing unit B located below the second processing unit B. Therefore, the diffusion of dirt from the second processing unit B side to the upper first processing unit A side is prevented. A through hole 74 is provided at the center of the separator 72, and a wafer W held by a driver 61 described later passes between the first processing unit A and the second processing unit B via the through hole 74. You can go back and forth. An opening and a gate valve 73 that opens and closes the opening are provided in the housing at the boundary between the processing unit A and the processing unit B. When the gate valve 73 is closed, the inside of the plating unit M1 is separated from the outside processing space S, so that the diffusion of dirt from the plating unit M1 into the outside processing space S is prevented. Also, plating units M1 to M4
Can be operated independently and independently, and each is configured to be detachable from the processing system. Therefore, when the operation cannot be performed, for example, during the maintenance management of one plating unit, another plating unit can be used instead, and the maintenance can be easily performed.
The first processing section A is provided with a driver 61 as a substrate holding mechanism for holding and rotating the wafer W substantially horizontally. The driver 61 includes a holder 62 for holding the wafer W.
And a motor 63 for rotating the wafer W in a substantially horizontal plane together with the holder 62. A support beam 67 for supporting the driver 61 is attached to a jacket of the motor 63. The end of the support beam 67 is attached to the inner wall of the housing 41 via a guide rail 68 so as to be able to move up and down. The support beam 67 is further attached to the housing 41 via a cylinder 69.
, The position of the driver 61 can be moved up and down. Specifically, as shown in FIG. 5, the position of the driver 61 is a transfer position (I) for loading / unloading the wafer W, and a cleaning position (II) for cleaning the surface to be processed on the lower surface side of the wafer W. A spin dry position (IV) for performing spin dry and a plating position (V) for performing plating while the wafer W is immersed in a plating solution are moved up and down mainly between four different heights. The driver 61
A lifting mechanism (not shown) for raising and lowering only the wafer W is disposed inside the device. By operating this lifting mechanism, only the height of the wafer W is changed without changing the height of the driver 61 ( Up to III) can be changed inside the driver 61. This elevating mechanism is operated when the wafer W is brought into contact with or separated from a contact called a cathode contact 64 for applying a voltage by contacting the outer peripheral edge of the lower surface of the wafer W. W is raised to expose the contact surface and facilitate washing with water sprayed from the nozzle. Second processing unit B
Is provided with a plating bath 42 for containing a plating solution for copper plating such as copper sulfate. Plating bath 42
Has a double structure, and an outer tank 42 is provided outside the inner tank 42a.
b is disposed substantially coaxially. The plating bath 42 is disposed directly below the driver 61, and when the inner bath 42a is filled with the plating solution, the level of the plating solution is stopped at the plating position (V). Inner tank 42a at a height where the plating solution level is higher than
Has been fixed. An ejection pipe 43 for ejecting the plating solution from the bottom to the upper surface is provided inside the inner tank 42a.
An electrode 44 that functions as an anode at the time of electrolytic plating is provided around the center of the bottom of the inner tank 42a and substantially in the depth direction of the inner tank 42a.
A diaphragm 45 is provided between the outer periphery of the end of the ejection pipe 43 and the inner tank 42a.
Is provided to prevent foreign substances mixed in from the electrode 44 during electrolytic plating from floating on the surface of the plating liquid and causing an obstacle to plating. A circulating pipe 4717 for circulating the plating solution is provided at a position eccentric from the center of the bottom of the inner tank 42a. The plating solution is circulated by a pump (not shown), and the plating solution sucked by the circulating pipe 47 is circulated by the circulating pipe. 46. The outer tank 42b forms a flow path 42 through which the plating solution flows between the outer tank 42b and the outer wall surface of the inner tank 42a. Further, a pipe 48 for returning the plating solution flowing into the flow path 42 to the inside of the inner tank 42a is connected to the bottom of the outer tank 42b. The pipe 48 is connected to the jet pipe 43 via a pump 49. By operating the pump 49, the plating solution that has overflowed from the inner tank 42 a and flowed into the flow path 42 and the pipe 48 is returned to the inner tank 42 a. And can be ejected toward the surface to be processed on the lower surface side of the wafer W. Below the separator 72, a second processing unit is formed. The second processing section B is a space formed separately and independently from the first processing section A, and air flowing through the first processing section A flows into the second processing section B, The air in the processing section B does not flow into the first processing section A. By preventing air from flowing from the processing section B to the processing section A in this way, the inside of the processing section A is maintained in a clean atmosphere. An exhaust port 71 is provided below the separator 72. The exhaust port 71 is connected to an exhaust system (not shown). The exhaust port 71 sucks fine particles of the plating solution scattered in the air of the second processing section B through the exhaust port 71 and exhausts the exhausted gas to the outside of the plating system. By discharging the fine particles contained in the air of the processing section B to the outside of the plating system, the inside of the plating unit and the inside of the plating system are maintained in a clean atmosphere. A plurality of cleaning nozzles 70, 70,... Are provided in the lower part of the inner wall of the through-hole 74 through which the driver 61 enters and leaves the separator 72. For example, pure water is directed toward the lower surface of the wafer W stopped at the cleaning position. They are spouted and washed. In addition, it is also possible to form a horizontal air curtain at the portion of the through-hole 74. For example, there is a method in which clean air is blown out from one side of the separator 72 in a planar shape, while an air inlet is provided on the opposite side of the air outlet to suck air that has passed above the plating bath 42 and exhaust the air outside the system. . By forming the air curtain at the boundary between the processing unit A and the processing unit B in this manner, it is possible to prevent the mist containing the plating solution from the plating bath 42 from diffusing to the processing unit A side. Further, a temperature controller and a humidity controller can be provided in the plating unit M1. In that case, since the inside of the plating unit M1 is controlled to maintain a predetermined temperature and humidity,
The generation of mist such as a plating solution can be prevented, and the air in the plating unit M1 is prevented from being contaminated. 6 and 7 are a plan view and a cross-sectional view illustrating the configuration of the annealing unit according to the present embodiment.
In FIG. 7, the horizontal shielding plate 112 is omitted for illustration. The processing chamber 110 of this annealing unit is formed by both side walls 111 and a horizontal shielding plate 112,
The front side (main arm 35 side) and the back side of 10 have openings 170A and 170B, respectively. A circular opening 113 is formed at the center of the shielding plate 112, and a disk-shaped susceptor 120 is provided in the opening 113. The susceptor 120 is provided with, for example, three through-holes 121, and a support pin 122 is inserted in each through-hole 121 in a loosely fitted state. When the wafer W is loaded and unloaded, each support pin 122 is connected to the susceptor 120. The wafer W is projected or raised above the surface to transfer the wafer W to and from the holding member 35a of the main arm 35. On the outer periphery of the susceptor 120, there is provided a shutter 126 formed of a ring-shaped strip having a large number of ventilation holes 12 formed at intervals of 2 ° in the circumferential direction. Although the shutter 126 is normally retracted to a position below the susceptor 120, it rises to a position higher than the upper surface of the susceptor 120 as shown in FIG. A ring-shaped side wall is formed between them, and an inert gas such as a downflow air or a nitrogen gas sent from a gas supply system (not shown) is caused to flow evenly in the circumferential direction from the vent hole 124. An exhaust port 128a for exhausting gas generated from the surface of the wafer W during the heat treatment is provided at the center of the cover 128, and the exhaust pipe 128
0 is connected. The exhaust pipe 130 communicates with a duct (not shown) on the front side of the apparatus (the main arm 35 side). Below the shielding plate 112, the shielding plate 112, both side walls 1
A machine chamber 115 is formed by 11 and the bottom plate 114, and a susceptor support plate 116, a shutter arm 117, a support pin arm 118, a shutter arm up / down drive cylinder 119, and a support pin arm up / down drive cylinder 125 are provided in the room. . As shown in FIG. 6, a plurality of, for example, four wafer W guide support protrusions 131 are provided on the surface of the susceptor 120 on which the outer peripheral edge of the wafer W is to be placed. An electric heater (not shown) such as a nichrome wire is provided inside the susceptor 120, and the susceptor 120 is maintained at a predetermined temperature by heating the electric heater. FIG. 8 is a vertical sectional view schematically showing the structure of the cleaning unit (SRD) 270 according to the present embodiment. In this cleaning processing unit 270, a fixed cup 27 is placed in a substantially rectangular box-shaped housing 271.
2 is provided, and a rotating cup 273 and a lifter 274 are provided inside the fixed cup 272. An opening 277 facing the main arm 35 is provided in the housing 271, and a gate valve 278 for opening and closing the opening 277 is provided. By closing the gate valve 278, the cleaning processing unit 270 is shut off from the processing space S, so that dirty air does not diffuse from the inside of the cleaning processing unit 270 to the processing space S outside the cleaning processing unit 270. Further, a pressure control device for maintaining the pressure at a negative pressure from the outside thereof, a device for controlling the temperature and humidity, and the like may be provided in the cleaning processing unit 270. By keeping the internal pressure at a lower pressure than the processing space S, the diffusion of the contamination from the cleaning processing unit 70 to the outside is prevented. In addition, by controlling the temperature and the humidity, the generation of mist containing a pollution source is prevented. The rotating cup 273 rotates while holding the wafer W, and cleans the wafer W by supplying a cleaning liquid to the upper and lower surfaces of the held wafer W. As shown in the small circle of FIG. 8, the chuck member 292 is inclined on the side wall of the rotating cup 273. When the rotating cup 273 is at rest, the tip end 292a has the outer peripheral edge of the wafer W as shown by the small circle A. The wafer W is detachably placed on the rotating cup 2
At the time of rotation of 73, the tip 292a presses the outer peripheral edge of the wafer W inward in the radial direction by centrifugal force as shown by the small circle B, and is firmly fixed. An edge nozzle 301 as a first nozzle is horizontally moved in a radial direction of a circle around the rotation axis 300 of the rotation cup 273 above the rotation cup 273, and a chuck member is provided in the rotation cup 273. The outer peripheral edge of the wafer W fixed by 292 is cleaned. That is, as shown in FIG. 8, when cleaning the outer peripheral edge of the wafer W, the edge nozzle 301 approaches the outer peripheral edge of the wafer W fixed by the chuck member 292 in the rotating cup 273 and the wafer W A cleaning liquid or water is discharged to the outer peripheral edge to clean the outer peripheral edge of the wafer W. Above the rotating cup 273, two nozzles, a washing water nozzle 302 and a chemical nozzle 303 as a second nozzle, are attached with their openings vertically downward. These are both mounted so as to be able to move horizontally in the radial direction from the center of the wafer W held by the rotating cup 273, and can be moved horizontally by a moving mechanism (not shown). Further, a washing water supply pipe for supplying washing water from the washing water tank tank is attached to the washing water nozzle 302, and a chemical solution supply pipe for supplying a chemical solution from the chemical solution tank is attached to the chemical nozzle 303. Cleaning water or chemical solution can be supplied toward the wafer W from the opening at the tip. When cleaning the wafer W with the cleaning processing unit 270,
With the rotating cup 273 rotated, the washing water nozzle 30 is rotated.
By supplying the cleaning water from 2, the surface of the wafer W is cleaned. Particularly, in order to clean the outer peripheral edge of the wafer W, a chemical solution or cleaning water is supplied obliquely from the edge nozzle 301 toward the outer peripheral edge of the wafer W while the rotating cup 273 is rotated, The outer peripheral edge is cleaned while supplying cleaning water to the surface of W. By doing so, the cleaning water and the chemical liquid scattered at the outer peripheral edge can flow off to the outside of the wafer W, so that the surface of the wafer W can always be kept clean. A liquid flow path and a lifter 284 having a plurality of shower-head-shaped through holes are opposed to the lower surface side of the wafer W placed on the rotating cup 273. By supplying water, the back side can be cleaned. Further, in the cleaning processing unit 270, an etching solution can be supplied from the chemical solution nozzle 303. By supplying the etching liquid from the chemical liquid nozzle 303 while rotating the rotating cup 273, the wet etching back of the wafer W can be performed. That is, an etching solution is supplied onto the surface of the rotating wafer W, and the metal layer on the surface is etched to remove an extra plating layer. Here, the extra plating layer is a plating layer other than the plating layer embedded in the groove or the hole. Therefore, since an extra plating layer can be removed by performing a wet etch back in the cleaning processing unit 270, use of a device such as a surface polishing device (CMP) for mechanically polishing the surface of the plating layer, or mechanical polishing The processing can be omitted. Next, each step of the method for manufacturing a semiconductor device according to the present embodiment will be described. FIG. 9 is a flowchart illustrating a manufacturing process flow of the semiconductor device according to the present embodiment, and FIG. 10 is a vertical cross-sectional view schematically illustrating the manufacturing process of the semiconductor device according to the present embodiment. As shown in FIG. 9, when the plating system is started up by turning on the power, the sub arm 22 accesses the carrier cassette C mounted on the mounting table 21 and the unprocessed The wafer W is taken out and delivered to the main arm 35. At this time, as shown in a vertical sectional view of FIG. 10A, the wafer W has a thin seed layer 403a formed in a groove on the surface. The main arm 35 accesses the inside of the plating unit M1 and delivers the wafer W to the holder 62 therein.
The loading of the wafer W is completed (Step 1). Next, a first plating process is performed in the plating unit M1 (step 2). When the first plating process is completed in this way, as shown in FIG.
Is formed. When the plating process is completed, the main arm 35 accesses the plating unit M1, takes out the processed wafer W, transfers it to the cleaning unit 270, and cleans it therein (step 3). When the cleaning process is completed, the wafer W is transferred to the annealing processing unit, where the wafer W is annealed (Step 4). Next, when the annealing process is completed, the wafer W is transferred into the cleaning unit 270 again, and wet etching is performed in the cleaning unit 270 (step 5). Step 35 may be performed simultaneously. That is, as shown in FIG. 8, while rotating the rotating cup 273 on which the wafer W is placed, an etching solution is supplied from the chemical solution nozzle 303 toward the wafer W to remove an excessive plating layer on the surface of the wafer W. . FIG. 10C schematically shows this state. As shown in FIG. 10C, the etching solution 404 supplied from the chemical solution nozzle 303 flows down while etching the upper surface of the plating layer 403. By performing wet etch-back while supplying an etching solution for a predetermined time, FIG.
As shown in (d), an extra plating layer is removed from the surface of the wafer W. When the wet etch back is completed, the wafer W is unloaded from the cleaning processing unit 270 (Step 6),
A series of processing steps is completed. As described above, in the present invention, the surface polishing apparatus CMP for mechanically polishing to remove an excess portion of the plating layer formed on the surface of the wafer W
Instead of using an etching solution, a cleaning unit (SRD) having a chemical solution nozzle 303 as a dedicated nozzle for supplying an etching solution is used, and the etching solution is supplied from the chemical solution nozzle 303 to chemically remove the etching solution. Mechanical surface polishing device (CM
A semiconductor device can be manufactured without using P). The present invention is not limited to the range described in the above embodiment. For example, in this embodiment, the case of plating on a silicon wafer has been described.
It goes without saying that the present invention can be applied to substrates other than silicon wafers such as glass substrates for CDs. (Second Embodiment) In this embodiment, when the plating layer is wet-etched back by the cleaning apparatus in the first embodiment, a means for detecting the end point of the plating layer to be wet-etched back is further provided. I have it. FIG. 12 shows a schematic configuration of an apparatus according to the present embodiment. As shown in FIG. 12, in the apparatus according to the present embodiment, a device for detecting the surface state of the plating layer, for example, optically monitoring the surface of the plating layer such as a CCD and detecting the reflected light to detect the surface state It has a mechanism to detect changes in According to the apparatus according to the present embodiment, since the means for detecting the end point of the wet etchback is provided, the final thickness of the plating layer can be detected with high accuracy. Therefore, a high-quality semiconductor device can be manufactured with high yield. The edge removal may be omitted.

According to the liquid processing system of the present invention, a semiconductor device can be manufactured without using a mechanical surface polishing apparatus (CMP).

[Brief description of the drawings]

FIG. 1 is a perspective view of a plating system according to the present invention.

FIG. 2 is a plan view of a plating system according to the present invention.

FIG. 3 is a front view of a plating system according to the present invention.

FIG. 4 is a side view of the plating system according to the present invention.

FIG. 5 is a vertical sectional view of a plating unit according to the present invention.

FIG. 6 is a plan view of an annealing processing unit according to the present invention.

FIG. 7 is a vertical sectional view of an annealing processing unit according to the present invention.

FIG. 8 is a vertical sectional view of a surface polishing processing unit according to the present invention.

FIG. 9 is a flowchart showing a manufacturing process of the semiconductor device according to the present invention.

FIG. 10 is a vertical sectional view showing the process of manufacturing the semiconductor device according to the present invention.

FIG. 11 is a vertical sectional view of a processing apparatus according to a second embodiment of the present invention.

FIG. 12 is a vertical sectional view of a conventional mechanical surface polishing apparatus CMP.

[Explanation of symbols]

 W: Wafer (substrate to be processed), M1 to M4: Plating unit, 270: Cleaning unit, 273: Rotating cup (holding means) 301: Edge nozzle (first nozzle), 302: Cleaning water nozzle, 303 … Chemical liquid nozzle (second nozzle) 403… plating layer 403 a… seed layer

Claims (3)

[Claims] A step of plating a substrate to be processed in a first processing apparatus to form a plating layer that covers fine irregularities on the surface of the substrate to be processed and covers the entire surface of the substrate to be processed; Manufacturing a semiconductor device, comprising: transporting a processing substrate to a second processing apparatus; and supplying an etchant to the plating layer to etch back and remove an excess plating layer. Method. 2. A means for rotatably holding a substrate to be processed, and supplying a processing agent to the outer peripheral edge of the rotating substrate to be processed in a direction radially outward of the substrate to be processed and in a direction inclined to the plate surface. A first nozzle for removing a metal layer on the outer peripheral edge surface of the substrate to be processed, and a second nozzle for supplying a processing agent for removing the metal layer on the surface of the substrate to the surface of the substrate to be processed And a processing device comprising: 3. The processing apparatus according to claim 2, further comprising: means for detecting an end point of the metal layer to be removed.