JP2003031538A - Wafer processing apparatus and method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a wafer processing apparatus and a wafer processing method where atmosphere being generated from a supply means in standby does not affect a wafer that has been treated, and wafer processing atmosphere and atmosphere being generated from other supply means do not contaminate the supply means. SOLUTION: In the wafer processing apparatus having a retention means 59 for retaining a wafer W, and a supply means 50 for supplying processing liquid or a treatment gas to the wafer W being retained by the retention means 59, an outer chamber 43 for surrounding the retention means 59 is provided, a supply means 50 is provided outside the outer chamber 43, and an opening 48' is provided at the outer chamber 43, where the opening 48' can be opened and closed to allow the supply means 50 to carry it in and carry it out.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus and a substrate processing method for cleaning a substrate such as a semiconductor wafer or glass for LCD substrate.

[0002]

2. Description of the Related Art For example, in a semiconductor device manufacturing process, a semiconductor wafer (hereinafter referred to as "wafer").
There is used a cleaning system that cleans the wafer with a cleaning solution such as a chemical solution or pure water to remove contaminants such as particles, organic contaminants, and metal impurities attached to the wafer.
As a substrate cleaning processing apparatus provided in such a cleaning system, various types of substrate cleaning processing apparatuses such as a batch type and a single-wafer type are known, and one example thereof is JP-A-8-
The substrate cleaning processing apparatus disclosed in Japanese Patent No. 78368 is known. In the substrate cleaning processing apparatus disclosed in Japanese Unexamined Patent Publication No. 8-78368, the plate is brought close to the surface of the wafer, and the processing liquid or the processing gas is supplied to the gap between the wafer surface and the plate to perform the cleaning processing. Therefore, there is an advantage that the consumption of the processing liquid and the processing gas can be saved.

[0003]

However, in the conventional substrate cleaning processing apparatus, the means for supplying the processing liquid or the processing gas to the substrate is arranged in the same atmosphere as the substrate processing area for performing the substrate processing. It was Therefore, the atmosphere generated from the supply means for supplying the processing liquid or the processing gas diffuses,
There is a concern that the processed substrate may be adversely affected. In addition, there is a concern that the atmosphere of the processing liquid or the processing gas may diffuse during the processing of the substrate and may contaminate the supply means during standby. Further, when a plurality of supply means for supplying different treatment liquids are provided, there is a concern that the supply means may adversely affect each other.

Therefore, it is an object of the present invention to prevent the atmosphere generated from the supply means during standby from adversely affecting the processed substrate, and to use the supply means in a substrate processing atmosphere or an atmosphere generated from another supply means. It is an object of the present invention to provide a substrate processing apparatus and a substrate processing method that are free from the risk of contamination.

[0005]

In order to solve the above-mentioned problems, according to the present invention, a holding means for holding a substrate and a supply for supplying a processing liquid or a processing gas to the substrate held by the holding means. In the substrate processing apparatus including the means, an outer chamber surrounding the holding means is provided, the supply means is provided outside the outer chamber, and an openable / closable opening through which the supply means enters and leaves is provided in the outer chamber. A featured substrate processing apparatus is provided.

In the present invention, the substrate is exemplified by a substrate such as a semiconductor wafer or a glass for an LCD substrate, and may be a CD substrate, a printed substrate, a ceramic substrate or the like. The processing liquid or the processing gas includes, for example, a cleaning liquid such as various chemical liquids or pure water, as well as various processing liquids and processing gases for performing various kinds of processing on the substrate. Substrate processing equipment
For example, it is embodied as a substrate cleaning apparatus that supplies a cleaning liquid to a wafer or the like to perform cleaning processing.

In the substrate processing apparatus of the present invention, for example, the substrate is held while the supply means is on standby outside the outer chamber. After that, the opening is opened to move the supply means to the inside of the outer chamber, and the processing liquid or the processing gas is supplied to the substrate by the supply means. When the supply is completed, the supply means is moved to the outside of the outer chamber and the opening is closed. In this way, the area where the supply means stands by and the area where the substrate processing is performed can be separated.

Further, according to the present invention, there is provided a substrate processing apparatus comprising a holding means for holding a substrate and a plurality of supply means for supplying a processing liquid or a processing gas to the substrate held by the holding means, A plurality of supply means storage units for respectively sealingly storing a plurality of supply means are provided, and openable and closable openings into and from which the plurality of supply means enter and exit the plurality of supply means storage units, respectively. Provided is a substrate processing apparatus characterized by being provided. Further, an outer chamber surrounding the holding means may be provided.

In this case, for example, the substrate is held in a state where each supply means is stored in each supply means storage section. After that, first, the opening of the supply means storing section in which the supply means for supplying the processing liquid or the processing gas to the substrate is stored is opened, and the supply means is moved into the outer chamber, and the processing solution is applied to the substrate by the supply means. Alternatively, the processing gas is supplied. At this time, the other supply means are made to stand by in the respective storage means storage units, and the respective openings are closed to seal the supply means storage units. When the first supply is completed, the first supply means is moved to the supply means storage section and the opening is closed. After that, the opening of the supply means storing portion in which the supply means for supplying the processing liquid or the processing gas to the substrate is stored is opened next. In the same manner, the same operation is performed for the supply means and the opening of the supply means storing section for supplying the processing liquid or the processing gas in sequence. In this way, even if the atmosphere diffuses from the supply means, the processing liquid atmosphere or the processing gas is prevented from contaminating other supply means.

The substrate processing apparatus of the present invention may have a structure provided with an inner cup surrounding the holding means. Also,
A configuration may be provided that includes a top plate that relatively moves between a processing position close to the upper surface of the substrate held by the holding unit and a position apart from the upper surface of the substrate held by the holding unit. Further, it may be configured to include an under plate that relatively moves between a processing position close to the lower surface of the substrate held by the holding means and a position apart from the lower surface of the substrate held by the holding means.
A unit chamber surrounding the holding means and the supply means may be provided. Such a substrate processing apparatus can preferably carry out a substrate processing method in which a chemical solution is applied to a substrate and processed, and then a treatment with a rinse liquid is performed.

Further, according to the present invention, there is provided a method of processing a substrate by supplying a processing liquid or a processing gas to the substrate held inside the outer chamber by a supply means.
A substrate processing method is provided, wherein the supply unit is moved to the outside of the outer chamber, and the supply unit is cleaned in a state of being isolated from the atmosphere inside the outer chamber. In this case, by cleaning the supply means, it is possible to supply the processing liquid with high cleanliness to the substrate. Furthermore, the cleaning liquid atmosphere generated when cleaning the supply means is prevented from affecting the substrate in the outer chamber.

In this substrate cleaning method, it is preferable that the supply means is stored inside the supply means storage portion and cleaned. Further, another process may be performed inside the outer chamber during the cleaning of the supply means. In this case, since the supply means can be cleaned even while other steps are being performed in the outer chamber, it is possible to constantly supply the processing liquid with high cleanliness to the substrate.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION A preferred embodiment of the present invention will be described below on the basis of a substrate cleaning unit as a substrate processing apparatus configured to clean both surfaces of a wafer as an example of a substrate. FIG. 1 is a plan view of a cleaning system 1 incorporating the substrate cleaning units 12, 13, 14, 15 according to this embodiment. FIG. 2 is a side view thereof. The cleaning system 1 includes a cleaning processing unit 2 that performs cleaning processing on the wafer W and thermal processing after the cleaning processing, and a loading / unloading unit 3 that loads / unloads the wafer W into / from the cleaning processing unit 2.

The loading / unloading unit 3 is provided with an in / out unit provided with a mounting table 6 for mounting a container (carrier C) capable of accommodating a plurality of, for example, 25 wafers W substantially horizontally at a predetermined interval. It comprises a port 4 and a wafer transfer section 5 provided with a wafer transfer device 7 for transferring wafers between the carrier C mounted on the mounting table 6 and the cleaning processing section 2.

In the carrier C, the wafer W is loaded and unloaded through one side surface of the carrier C, and an openable / closable lid is provided on this side surface. Further, a shelf plate for holding the wafers W at predetermined intervals is provided on the inner wall,
There are formed 25 slots for receiving the. The wafers W are accommodated one by one in each slot with the front surface (the surface on which the semiconductor device is formed) being the upper surface (the upper surface when the wafer W is held horizontally).

On the mounting table 6 of the in / out port 4,
For example, three carriers can be arranged in the Y direction on the horizontal plane and placed at a predetermined position. The carrier C is placed with the side surface provided with the lid facing the boundary wall 8 side between the in / out port 4 and the wafer transfer section. A window 9 is formed on the boundary wall 8 at a position corresponding to the mounting location of the carrier C, and a window opening / closing mechanism for opening / closing the window 9 with a shutter or the like is provided on the wafer transfer unit 5 side of the window 9. 10 are provided.

The window opening / closing mechanism 10 can also open and close the lid provided on the carrier C, and at the same time when the window 9 is opened and closed, the lid of the carrier C is opened and closed. Window opening / closing mechanism 10
It is preferable to provide an interlock so that the carrier C does not operate when the carrier C is not mounted at a predetermined position on the mounting table. When the window 9 is opened so that the wafer loading / unloading port of the carrier C and the wafer transfer unit 5 are communicated with each other, the wafer transfer device 7 disposed in the wafer transfer unit can access the carrier C and transfer the wafer W. Can be performed. A wafer detection device (not shown) is provided above the window 9 and the wafer W stored in the carrier C is provided.
It is possible to detect the number of sheets and the state of each slot for each slot. Such a wafer detection device can be attached to the window opening / closing mechanism 10.

The wafer transfer device 7 provided in the wafer transfer section 5 is movable in the Y and Z directions, and X-
It is configured to be rotatable in the Y plane (θ direction). Further, the wafer transfer device 7 has a take-out and storage arm 11 for holding the wafer W, and the take-out and storage arm 11 is slidable in the X direction. In this way, the wafer transfer device 7 accesses the slots at any height of all the carriers C mounted on the mounting table 6, and also the upper and lower two wafer transfer units 16 arranged in the cleaning processing unit 2. , 17
The wafer W can be transferred from the side of the in / out port 4 to the side of the cleaning processing section 2 and vice versa, from the side of the cleaning processing section 2 to the side of the in / out port 4.

The cleaning processing section 2 includes a main wafer transfer device 18
, Two wafer transfer units 16 and 17, and four substrate cleaning units 12 and 13 according to the present embodiment.
14 and 15, three heating units 19, 20 and 21 for heating and drying the wafer W, and a cooling unit 22 for cooling the heated wafer W. The main wafer transfer device 18 is arranged to be accessible to all of the wafer transfer units 16 and 17, the substrate cleaning units 12, 13, 14, and 15, the heating units 19, 20, and 21, and the cooling unit 22. The wafer transfer units 16 and 17 temporarily mount the wafer W in order to transfer the wafer W to and from the wafer transfer section 5.

The cleaning processing section 2 includes an electric unit 23 which is a power source for operating the entire cleaning system 1,
A machine control unit 24 for controlling the operation of various devices arranged in the cleaning system 1 and the entire cleaning system 1, and a chemical liquid storage unit for storing a predetermined cleaning liquid to be sent to the substrate cleaning units 12, 13, 14, 15. And 25 are provided. The electrical unit 23 is connected to a main power source (not shown). A fan filter unit (FFU) 26 for downflowing clean air is provided in each unit and the main wafer transfer device 18 on the ceiling of the cleaning processing unit 2.

Electrical equipment unit 23 and chemical liquid storage unit 25
By installing the machine control unit 24 outside the cleaning processing unit 2 or by pulling it out to the outside,
Wafer transfer units 16 and 1 from this surface (Y direction)
7, main wafer transfer device 18, heating units 19, 20,
21 and the cooling unit 22 can be easily maintained.

FIG. 3 shows the wafer transfer unit 16, 1
7, the main wafer transfer device 18 and the heating units 19 and 2 which are adjacent to the wafer transfer units 16 and 17 in the X direction.
It is sectional drawing which shows the schematic arrangement of 0, 21, and the cooling unit 22. The wafer transfer units 16 and 17 are arranged so as to be vertically stacked in two stages. For example, the lower wafer transfer unit 17 mounts a wafer W to be transferred from the in / out port 4 side to the cleaning processing unit 2 side. The upper wafer transfer unit 16 can be used for mounting the wafer W transferred from the cleaning processing section 2 side to the in / out port 4 side.

Fan filter unit (FFU) 26
Part of the down flow from the wafer transfer unit 16 and 17 passes through the wafer transfer units 16 and 17 and the space above it.
It has a structure that flows toward. As a result, invasion of particles and the like from the wafer transfer section 5 into the cleaning processing section 2 is prevented, and the cleanliness of the cleaning processing section 2 is maintained.

The main wafer transfer device 18 includes vertical walls 27, 28 arranged in the Z direction and the side opening 2 between them.
And a tubular support 30 having a tubular support 3 inside thereof.
The wafer carrier 31 is provided so as to be movable up and down in the Z direction along the direction 0. The cylindrical support 30 is rotatable by the rotational driving force of the motor 32, and the wafer transfer body 31 is also rotated integrally therewith.

The wafer carrier 31 is equipped with a carrier base 33 and three carrier arms 34, 35, 36 which are movable back and forth along the carrier base 33.
The reference numerals 5 and 36 are large enough to pass through the side opening 29 of the tubular support 30. These transfer arms 34, 3
The motors 5 and 36 can be moved back and forth independently by a motor and a belt mechanism built in the transport base 33. The wafer carrier 31 is moved up and down by driving a belt 38 with a motor 37. Reference numeral 39 is a drive pulley and 40 is a driven pulley.

Cooling unit 2 for forcibly cooling the wafer W
Three heating units 19, 20, and 21 are stacked and arranged on the second unit. The cooling unit 22 and the heating units 19, 20, 21 can be provided in the space above the wafer transfer units 16, 17.
In this case, the positions of the cooling unit 22 and the heating units 19, 20, 21 shown in FIG. 1 can be used as other utility spaces.

Substrate cleaning units 12, 13, 14, 15
Are arranged in two stages, one on the upper side and one on the lower side. As shown in FIG. 1, the substrate cleaning units 12 and 13 and the substrate cleaning units 14 and 15 have a symmetrical structure with respect to the wall surface 41 forming the boundary between them. Except for each substrate cleaning unit 12, 13, 14, 1
5 has substantially the same configuration. Therefore, the structure of the substrate cleaning unit 12 will be described in detail below as an example.

FIG. 4 is a plan view of the substrate cleaning unit 12. Unit chamber 42 of substrate cleaning unit 12
Inside, there is provided an outer chamber 43 having a hermetically sealed structure for containing the wafer W, a chemical solution arm storage section 44, and a rinse drying arm storage section 45. Unit chamber 42
An opening 46 'is formed in the opening 46', and a mechanical shutter 46 for a unit chamber that opens and closes the opening 46 'by an opening / closing mechanism (not shown) is provided. The wafer W is loaded into and unloaded from the opening 46' by the transfer arm. The mechanical shutter 46 for the unit chamber is adapted to open at the time of opening. The mechanical shutter 46 for the unit chamber is configured to open and close the opening 46 ′ from the inside of the unit chamber 42, so that even if the inside of the unit chamber 42 becomes a positive pressure, the atmosphere inside the unit chamber 42 leaks to the outside. Does not appear.

An opening 47 'is formed in the outer chamber 43, and the opening 47' is opened and closed by a cylinder drive mechanism (not shown).
7 is provided, for example, by the transfer arm 34 from the opening 47 ′ to the outer chamber 43 through the wafer W.
The outer chamber mechanical shutter 47 is opened when the sheet is loaded and unloaded. The mechanical shutter 47 for the outer chamber may be opened / closed by an opening / closing mechanism common to the mechanical shutter 46 for the unit chamber. The outer chamber mechanical shutter 47 has an opening 47 ′ from the inside of the outer chamber 43.
It is designed to open and close the outer chamber 43
Even if the inside becomes positive pressure, the atmosphere inside the outer chamber 43 does not leak to the outside. Further, an opening 48 'is formed in the chemical liquid arm storage portion 44, and a chemical liquid arm storage portion shutter 48 for opening and closing the opening 48' by a drive mechanism (not shown) is provided. When the chemical solution arm storage section 44 is separated from the outer chamber 43 by the atmosphere, the chemical solution arm storage section shutter 48 is closed.
An opening 49 'is formed in the rinse drying arm storage section 45, and a rinse drying arm storage section shutter 49 for opening and closing the opening 49' by a drive mechanism (not shown) is provided. When the rinse drying arm storage unit 45 is separated from the outer chamber 43 by the atmosphere, the rinse drying arm storage unit shutter 49 is closed.

In the chemical solution arm storage section 44, the chemical solution / N
2, a chemical liquid supply system arm 50 capable of discharging two systems of IPA / pure water is stored. The chemical solution supply arm 50 is housed in the outer chamber 43 and can scan at least the center to the peripheral edge of the wafer W held by the spin chuck 59 described later. Chemical supply arm 5
0 is saved in the chemical liquid arm storage unit 44 except during processing. Since the chemical solution arm storage portion 44 is always in the chemical solution atmosphere, corrosion resistant parts are used. The chemical liquid supply system arm 50 includes a chemical liquid supply nozzle 51 and a rinse nozzle 52. The chemical liquid supply nozzle 51 discharges the chemical liquid 1 and N2 gas, and the rinse nozzle 52 discharges IPA and pure water. A chemical solution supply nozzle capable of discharging the chemical solution 2 may be provided as appropriate. When the chemical liquid supply system arm 50 moves from the opening 48 'into the outer chamber 43, the chemical liquid arm storage unit shutter 48 is opened.

In the rinse drying arm storage unit 45, N
2, a rinse drying arm 53 capable of discharging two systems of IPA / pure water is stored. The rinse drying arm 53 is housed in the outer chamber 43 and can scan at least the center to the peripheral edge of the wafer W held by the spin chuck 59 described later. Rinse drying arm 5
No. 3 is saved in the rinse drying arm storage unit 45 except during processing. Although the rinse drying arm storage unit 45 is not in a chemical liquid atmosphere, corrosion resistant parts may be used. The rinse drying arm 53 includes an N2 supply nozzle 54 and a rinse nozzle 55, and the N2 supply nozzle 54 discharges N2 gas,
The rinse nozzle 55 discharges IPA and pure water. The rinse drying arm 53 is opened from the opening 49 ′ to the outer chamber 43.
When moving in, the shutter 49 for the rinsing / drying arm storage is opened.

The chemical liquid arm storage unit 44 is provided with a chemical liquid supply system arm cleaning device 56 so that the chemical liquid supply system arm 50 can be appropriately cleaned. When cleaning the chemical solution supply arm 50, the chemical solution arm shutter 48 is closed to prevent the cleaning solution atmosphere from leaking to the unit chamber 42 and the outer chamber 43. Further, the rinse drying arm storage unit 45 is provided with a rinse drying arm cleaning device 57, and the rinse drying arm 53 is provided.
Can be washed appropriately. When the rinse drying arm 53 is cleaned, the rinse drying arm storage shutter 49 is closed to prevent the cleaning liquid atmosphere from leaking to the unit chamber 42 and the outer chamber 43.

As shown in FIG. 5, the outer chamber 4
An inner cup 58 for accommodating the wafer W and
In the inner cup 58, for example, with respect to the upper surface of the wafer W, the spin chuck 59 as a supporting means for rotatably supporting the wafer W, and the upper surface of the wafer W (the front surface of the wafer W) supported by the spin chuck 59. And a top plate 60 that moves relatively. In the outer chamber 43, an inclined portion 43 ′ is formed at a height where the wafer W supported by the spin chuck 59 is located, and the wafer W is surrounded by the inclined portion 43 ′. Also, the mechanical shutter 47 for the outer chamber
The upper part of the is a part of the inclined part 43 '. in this case,
When the wafer W is transferred to and from the spin chuck 57, the outer chamber mechanical shutter 47 is opened,
All that is required is to move the wafer W horizontally.

The spin chuck 59 comprises a chuck body 61 for supporting the wafer W, and a rotary cylinder 62 connected to the bottom of the chuck body 61. Chuck body 61
Inside the wafer W supported by the spin chuck 59.
An under plate 63 that moves relative to the lower surface (back surface of the wafer W) is arranged.

On the upper part of the chuck body 61, support pins (not shown) for holding the peripheral edge of the wafer W at a plurality of places and holding members 64 are mounted. Rotating cylinder 6
A belt 65 is wound around the outer peripheral surface of 2, and the entire spin chuck 59 is rotated by rotating the belt 64 by a motor 66. Each holding member 64 is provided with a weight, and the upper side of each holding member 64 is moved inward by the centrifugal force when the spin chuck 59 rotates, and the peripheral portion of the wafer W is held from the outside. When the spin chuck 59 is stationary, the wafer W is supported by the support pins, and when the spin chuck 59 is rotating, the wafer W is held by the holding member 64.

The under plate 63 is the chuck body 6
It is connected to an under plate shaft 67 that penetrates through the inside of 1 and the inside of the rotary cylinder 62. The under plate shaft 67 is fixed to the upper surface of a horizontal plate 68, and the horizontal plate 68 is vertically moved up and down integrally with the under plate shaft 67 by an elevating mechanism 69 such as an air cylinder. Therefore, the under plate 63
13 is a state in which it descends downward in the chuck body 61 as shown in FIG. 5 and stands by apart from the lower surface of the wafer W supported by the spin chuck 59 (retracted position).
As shown in FIG. 3, the upper surface of the chuck body 61 can be moved upward and downward, and the wafer W supported by the spin chuck 59 can be vertically moved to a state (processing position) where the cleaning processing is performed. While fixing the under plate 63 to a predetermined height, an elevating mechanism (not shown) is connected to the rotary cylinder 62 to elevate and lower the entire spin chuck 59 in the vertical direction, so that the under plate 63 is retracted from the processing position. The position may be freely moved up and down.

The top plate 60 is connected to the lower end of the top plate rotating shaft 70 and is rotated by a rotating shaft motor 72 installed on a horizontal plate 71. The top plate rotating shaft 70 is rotatably supported on the lower surface of a horizontal plate 71, and the horizontal plate 71 is vertically moved up and down by a rotating shaft elevating mechanism 73 such as an air cylinder fixed to the upper part of the outer chamber. Therefore, the top plate 60
When the rotating shaft elevating mechanism 73 is operated, as shown in FIG. 5, the spin chuck 59 is separated from the upper surface of the wafer W and is on standby (retracted position), and as shown in FIG. Wafer W supported by
It can be moved up and down while the upper surface is being cleaned (processing position).

The inner cup 58 is lowered to the position shown in FIG. 5, and the spin chuck 59 is projected above the upper end of the inner cup 58 to transfer the wafer W, and is raised to the position shown in FIG. Spin chuck 59
Also, the wafer W is vertically movable so as to surround the wafer W and prevent the cleaning liquid or the like supplied to both surfaces of the wafer W from scattering around.

When the inner cup 58 is lowered to the position shown in FIG. 5 to transfer the wafer W to and from the spin chuck 59, the under plate 63 is placed in the retracted position and the top plate 60 is placed in the retracted position. deep.
Then, the under plate 63 and the spin chuck 5
A sufficient gap is formed between the wafer W and the position of the wafer W supported by 9. Also, a sufficient gap is formed between the top plate 60 and the position of the upper surface of the wafer W. In this way, the wafer W is transferred to and from the spin chuck 59 smoothly.

As shown in FIG. 6, the under plate 63
A lower surface supply passage 75 for supplying a cleaning liquid such as a chemical liquid or pure water or a dry gas is provided in the under plate shaft 67.
It is provided penetrating inside. As shown in FIG. 7, the chemical solution /
Lower surface discharge ports 76 to 80 for discharging IPA / pure water / N2 are provided. The central lower surface ejection port 80 is directed upward in the center of the wafer W, and the lower surface ejection port 76 in the peripheral portion is located.
˜79 are inclined toward the periphery of the wafer W.

As shown in FIG. 8, the top plate 60 has an upper surface supply passage 85 for supplying, for example, pure water or dry gas.
Is provided so as to penetrate through the top plate rotating shaft 70. An N2 gas supply means 86 for discharging N2 gas is provided between the upper surface of the top plate 60 and the inside of the outer chamber at the upper part of the outer chamber 43.

As shown in FIG. 9, an inner cup discharge pipe 87 for discharging the liquid droplets inside the inner cup 58 is connected to the bottom of the inner cup 58. The inner cup discharge pipe 87 is vertically movable within a through-hole 88 provided at the bottom of the outer chamber 43. The lower end of the inner cup discharge pipe 87 is inserted into the inner cup mist trap 89. The inner cup mist trap 89 removes bubbles and the like from the liquid droplets discharged from the inner cup 58. The removed bubbles are exhausted to the outside by an inner cup mist trap exhaust pipe 90 connected to the inner cup mist trap 89. The liquid droplets from which the bubbles have been removed are recovered by the inner cup drainage recovery line 92 connected to the inner cup mist trap 89.

An outer chamber discharge pipe 93 for discharging the liquid droplets in the outer chamber 43 is connected to the bottom of the outer chamber 43. The outer chamber mist trap 9 is attached to the outer chamber discharge pipe 93.
4 is provided to remove bubbles and the like from the liquid droplets drained by the outer chamber mist trap 94. The removed bubbles are exhausted to the outside by an outer chamber mist trap exhaust pipe 95 connected to the outer chamber mist trap 94. The liquid droplets from which the air bubbles have been removed are recovered by the outer chamber drainage recovery line 96 connected to the outer chamber mist trap 94.

When the inner cup 58 descends, as shown in FIG.
As shown in FIG. 5, the spin chuck 59 and the wafer W held by the spin chuck 59 are projected above the upper end of the inner cup 58. In this case, the outer chamber 4
The liquid droplets in 3 descend outside the inner cup 58 and are discharged by the outer chamber discharge pipe 93. On the other hand, as shown in FIG.
The inner cup 58, the spin chuck 5
9 and the wafer W are surrounded so that the cleaning liquid and the like supplied to both surfaces of the wafer W are prevented from being scattered around. In this case, the upper portion of the inner cup 58 approaches the inner wall of the outer chamber 43, and the liquid droplets inside the inner cup 58 are discharged by the inner cup discharge pipe 87.

FIG. 11 is an explanatory view of the circulation mechanism of the processing liquid and IPA. An inner cup drainage recovery line 92 connected to the inner cup mist trap 89 is connected to a drainage pipe 98 or a chemicals recovery path 99 via a switching valve 97, and the chemicals recovery path 99 is connected to the tank 101 in the chemicals circulation unit 100. It is connected to the. The tank 101 is the drain pipe 10.
2 and the chemical liquid circulation path 103, and the chemical liquid circulation path 103 is provided with a pump 104 and a filter 105. The chemical solution circulation path 103 is connected to the chemical solution supply path 106. The chemical liquid supply passage 106 includes the chemical liquid supply nozzle 51 and the lower surface supply passage 75.
It is connected to the. The chemical liquid supply path 106 is provided with a temperature adjuster 108 that controls the temperature of the chemical liquid by a heater 107, for example. Thus, the temperature of the chemical liquid supplied to the wafer W is adjusted, and the chemical liquid recovered by the chemical liquid circulation unit 100 is reused.

The outer chamber drainage recovery line 96 connected to the outer chamber mist trap 94 is
It is connected to the drain pipe 110 or the IPA recovery path 111 via the switching valve 109, and the IPA recovery path 111 is connected to the tank 113 in the IPA circulation unit 112. The tank 113 has a drain pipe 114 and an IPA circulation path 115,
A pump 116 and a filter 11 are provided in the IPA circuit 115.
7 is provided. The IPA circulation path 115 is connected to the rinse nozzle 52 and the rinse nozzle 55 via the supply switching valve 118.
And the lower surface supply path 75. The IPA thus recovered by the IPA circulation unit 112 is reused. The IPA used for processing the wafer W is the unused IPA (pur) supplied from the IPA supply path 120 by the supply switching valve 118 and the IPA circulation unit 112.
It is possible to switch to the IPA (rec) collected by. The unused IPA (pur) supplied from the IPA supply path 120 is supplied to the rinse nozzle 55 and recovered by the IPA circulation unit 112.
PA (rec) is supplied to the rinse nozzle 52. Both the unused IPA (pur) supplied from the IPA supply path 120 and the IPA (rec) recovered by the IPA circulation unit 112 can be supplied to the lower surface supply path 75. Further, by switching the supply switching valve 118, the pure water supplied from the pure water supply passage 121 can be supplied to the rinse nozzle 52, the rinse nozzle 55, and the lower surface supply passage 75.

The other substrate cleaning units 13, 14, 15 provided in the cleaning system 1 also have the same structure as the substrate cleaning unit 12 and can simultaneously clean both surfaces of the wafer W with the cleaning liquid.

In the cleaning system 1, first, a carrier C containing, for example, 25 wafers W each of which has not been cleaned by a transfer robot (not shown) is installed.
Placed on Outport 4. Then, the wafers W are taken out one by one from the carrier C placed on the in / out port 4 by the taking-out and storing arm 11, and the wafers W are transferred from the taking-out and storing arm 3 to the main wafer transfer device 7. Then, the wafer W is appropriately carried into the substrate cleaning units 12, 13, 14, 15 by the transfer arm 34, and contaminants such as particles attached to the wafer W are cleaned and removed. The wafer W for which the predetermined cleaning process has been completed is appropriately unloaded from each substrate cleaning unit 12 by the main wafer transfer device 7 again, transferred to the unloading / accommodating arm 11, and stored in the carrier C again.

Here, the cleaning in the substrate cleaning unit 12 will be described as a representative. As shown in FIG. 5, first, the unit chamber mechanical shutter 46 of the substrate cleaning unit 12 is opened, and the outer chamber mechanical shutter 47 of the outer chamber 43 is opened. Then, for example, the transfer arm 34 holding the wafer W is advanced into the apparatus. The inner cup 58 descends and the chuck body 6
1 is relatively projected upward. As shown in FIG. 5, the under plate 63 has descended in advance and is located at the retracted position in the chuck body 61. The top plate 60 is raised in advance and positioned at the retracted position. Further, the chemical solution arm storage unit shutter 48 and the rinse drying arm storage unit shutter 49 are closed.

The main wafer transfer device 18 includes a transfer arm 34.
And the wafer W is transferred to the holding member 64, and the spin chuck 59 supports the wafer W with the surface of the wafer W on which the semiconductor device is formed as the upper surface by the support pins (not shown). In this case, the under plate 63 is located at the retracted position and is sufficiently separated from the position (height) of the wafer W supported by the spin chuck 59.
4 can transfer the wafer W to the spin chuck 59 with a margin. After transferring the wafer W to the spin chuck 59, the transfer arm 34 exits from the inside of the outer chamber 43 and the unit chamber mechanical shutter 46, and after exiting, the unit chamber mechanical shutter 46 of the substrate cleaning unit 12 and the outer chamber 43.
The outer chamber mechanical shutter 47 is closed. Further, the inner cup 58 rises, and the chuck body 61 and the wafer W are surrounded.

Next, the under plate 63 moves up to the processing position in the chuck body 61. As shown in FIG. 12, the lower surface of the wafer W supported by the under plate 63 moved to the processing position and the spin chuck 59 (wafer W
Between the back surface), for example, a gap L1 of about 0.5 to 3 mm
Is formed. On the other hand, the lower surface supply path 75 supplies the chemical liquid between the under plate 63 and the lower surface of the wafer W. In this case, the temperature of the chemical liquid is regulated by the temperature regulator 108 to a predetermined temperature. On the under plate 63, the lower surface supply path 7
The chemical solution is gently exuded from 5, for example, and the chemical solution is supplied to the gap L1. In the narrow gap L1, the chemical solution is spread over the entire lower surface of the wafer W to form a liquid film of the chemical solution that uniformly contacts the entire lower surface of the wafer W. When the liquid film of the chemical liquid is formed on the entire gap L1, the supply of the chemical liquid is stopped and the lower surface of the wafer W is cleaned. Forming a liquid film by pouring the chemical liquid in the gap L1 can prevent the liquid film of the chemical liquid from deforming due to surface tension. For example, if the shape of the liquid film of the chemical liquid is broken, a non-contact portion may be generated on the lower surface of the wafer W or the liquid film of the chemical liquid may cause bubbles to be mixed in the liquid film, resulting in poor cleaning. As described above, by filling the chemical liquid in the narrow gap L1 between the under plate 63 and the lower surface of the wafer W, it is possible to maintain the shape of the liquid film of the chemical liquid and prevent cleaning failure.

In this case, the spin chuck 59 rotates the wafer W at a relatively low rotation speed (for example, about 10 to 30 rpm) at which the shape of the liquid film of the chemical liquid is not broken.
Due to the rotation of the wafer W, a liquid flow is generated in the liquid film of the chemical liquid, and this liquid flow prevents stagnation in the liquid film of the chemical liquid and improves cleaning efficiency. Further, the rotation of the wafer W may be performed intermittently. For example, after rotating the wafer W for a predetermined time or a predetermined number of rotations, the rotation operation of the spin chuck 59 is stopped for a predetermined time to stop the wafer W, and then the wafer W is rotated again. By repeating the rotation and the rotation stop of the wafer W in this manner, the chemical liquid can be easily diffused over the entire lower surface of the wafer W. Of course, it is possible to perform the cleaning process while keeping the wafer W stationary without rotating it. Further, it is not necessary to supply a new chemical solution after forming the liquid film. As long as the shape of the liquid film of the chemical solution is not broken, the entire lower surface of the wafer W is already under plate 63.
This is because the cleaning can be performed with the chemical solution supplied between the lower surface of the wafer W and the lower surface of the wafer W. On the other hand, when the shape of the liquid film of the chemical liquid is about to collapse, a new liquid is supplied to appropriately restore the shape of the liquid film of the chemical liquid. In this way, the consumption of chemicals is saved. In addition,
The rotation of the wafer W causes the liquid film of the chemical liquid to drop from the peripheral edge of the under plate 63, while the lower surface supply path 75
By continuously supplying the chemical liquid by means of the above, it is possible to always replace the inside of the liquid film of the chemical liquid with a fresh chemical liquid and perform a suitable chemical liquid treatment. Also in this case, it is advisable to supply the new solution as gently as possible to save the chemical solution.

While the lower surface of the wafer W is thus cleaned, the chemical solution arm storage unit shutter 48 is opened and the chemical solution supply system arm 50 is rotated above the wafer W. The chemical solution supply arm 50 scans at least the center to the peripheral edge of the wafer W held by the spin chuck 59, and supplies the chemical solution. Also in this case, the temperature of the chemical liquid is adjusted to the predetermined temperature by the temperature adjuster 108. Further, the wafer W is rotated by the spin chuck 59 and the chemical liquid is deposited on the upper surface of the wafer W to form a uniform liquid film of the chemical liquid. During this time, the rinse drying arm storage section shutter 49 is kept closed to keep the rinse drying arm storage section 45 in a sealed state, thereby preventing the chemical solution from contaminating the rinse drying arm 53.

When the liquid film of the chemical liquid is formed on the upper surface of the wafer W, as shown in FIG. 13, the chemical liquid supply system arm 50 moves into the chemical liquid arm storing portion 44, and the chemical liquid arm storing portion shutter 48 is closed. . The top plate 60 is a wafer W
It moves to a position that is not in contact with the liquid film of the chemical liquid formed on the upper surface and is close to the upper surface of the wafer W. For example, a gap L2 is formed between the top plate 60 moved to a position close to the upper surface of the wafer W and the liquid film of the chemical liquid formed on the upper surface of the wafer W supported by the spin chuck 59. The top plate 60 supplies new liquid to appropriately restore the shape of the liquid film of the chemical liquid when the shape of the liquid film of the chemical liquid on the upper surface of the wafer W is about to collapse.
The chemical solution treatment on the upper surface of the wafer W is performed by the chemical solution already supplied from the chemical solution supply arm 50, and after the liquid film is formed, the supply of the new solution is stopped to save the consumption of the chemical solution. It should be noted that the wafer W is rotated to drop liquid crystal liquid film droplets from the peripheral edge of the upper surface of the wafer W, while the chemical liquid is continuously supplied from the top plate 60, whereby the liquid chemical liquid film on the upper surface of the wafer W May be always replaced with a fresh chemical solution to carry out a suitable chemical solution treatment. Thus, by covering the upper part of the wafer W with the top plate 60, it is possible to prevent the chemical liquid from evaporating from the liquid film of the chemical liquid. Further, the top plate 58 and the liquid film of the chemical solution may be brought into contact with each other. in this case,
A liquid film of the chemical liquid can be reliably formed between the top plate 58 and the upper surface of the wafer W.

During the chemical treatment, N 2 gas is supplied to the upper part of the top plate 60 by the N 2 gas supply means 86 provided in the upper part of the outer chamber 43 to form a downflow. Since the space between the upper surface of the top plate 60 and the outer chamber 43 is filled with N 2 gas, the chemical atmosphere that evaporates from the liquid film of the chemical liquid and rises from the periphery of the top plate 60 does not flow into the space above the top plate 60. . Therefore, it is possible to prevent the chemical solution from remaining in the upper portion of the outer chamber 43 after the chemical solution treatment. Further, there is an effect that it is difficult to form a watermark on the surface of the wafer W.

When the chemical treatment on both sides of the wafer W is completed, the top plate 60 is raised while rotating. That is, the chemical liquid adhering to the top plate 60 is shaken off by rotating. The droplet is discharged to the inner cup discharge pipe 87. After the top plate 60 moves to the retracted position, the spin chuck 59 rotates at 2000 rpm for 5 seconds, for example. That is, the chemical liquid puddle on the wafer W is shaken off and discharged to the inner cup discharge pipe 87. The liquid droplets of the chemical liquid are discharged by the inner cup discharge pipe 87, and then collected and reused by the chemical liquid circulation unit 100. As a result, a chemical-saving solution is achieved.

After that, the shutter 4 for storing the chemical liquid arm
8 is opened, and the chemical solution supply arm 50 is rotated above the wafer W again. The chemical solution supply arm 50 scans at least the center of the wafer W from the periphery while
N2 gas is supplied for 0 seconds. By doing this,
The chemical liquid droplets can be discharged to the outer periphery of the wafer W.
On the other hand, the lower surface supply path 75 supplies N 2 gas between the under plate 63 and the lower surface of the wafer W for, for example, 10 seconds, and discharges the chemical atmosphere below the wafer W. In this way, by supplying the N 2 gas, it is possible to remove the droplets of the chemical liquid from the front and back surfaces of the wafer W. The liquid droplets of the chemical liquid are discharged by the inner cup discharge pipe 87, and then collected and reused by the chemical liquid circulation unit 100. As a result, a chemical-saving solution is achieved.

Then, as shown in FIG. 14, the inner cup 58 is lowered, and the chemical solution supply system arm 50 is again moved to the wafer W.
Rotate above. The chemical solution supply arm 50 scans the radius of the wafer W and supplies IPA (rec) to the upper surface of the wafer W for 10 seconds, for example. Further, the lower surface supply path 75 supplies IPA (rec) between the under plate 63 and the lower surface of the wafer W for, for example, 10 seconds. IPA
(Rec) is drained by the outer chamber discharge pipe 93. After the end of the IPA (rec) supply, the chemical solution supply system arm 50 moves into the chemical solution arm storage section 44, and the chemical solution arm storage section shutter 48 closes.

Next, the shutter 49 for the rinsing / drying arm storage section is opened, and the rinsing / drying arm 53 is rotated above the wafer W. The chemical solution arm storage unit shutter 48 is kept closed to keep the chemical solution arm storage unit 44 in a sealed state, and the chemical solution atmosphere generated from the chemical solution supply system arm 50 (chemical solution supply nozzle 51) contaminates the wafer W and the rinse drying arm 53. Prevent. Rinse drying arm 53 is 1000r
While scanning at least the center to the periphery of the wafer W rotating at pm, IPA (pur) is supplied to the upper surface of the wafer W at 1 liter / min for 1 second, for example. In addition, the lower surface supply path 75 is provided between the under plate 63 and the lower surface of the wafer W, for example, 1 liter / m for 1 second.
Supply in IPA (pur). IPA (pur)
Is drained by the outer chamber discharge pipe 93, and then recovered by the IPA circulation unit 112.
It is reused as A (rec).

Next, the rinse drying arm 53 scans the upper surface of the wafer W, for example, for 1 second for 2 seconds.
/ Min of pure water is supplied. Further, the wafer W is rotated at a higher speed (for example, about 500 to 1000 rpm) than when the chemical solution is processed. By supplying pure water to the wafer W rotating at a high speed, the supplied pure water can be uniformly diffused over the entire upper surface of the wafer W. Also, the bottom surface supply path 7
5 is on the lower surface of the wafer W, for example, for 2 seconds, 1 liter / m
In pure water is supplied. The under plate 63 is kept in the processing position. Wafer W rotating at high speed
In addition, by supplying pure water through the gap L1, the supplied pure water can be diffused uniformly over the entire lower surface of the wafer W. Further, the under plate 63 itself can be washed. In this way, both sides of the wafer W are rinsed,
The chemical solution is washed away from the wafer W. The pure water used for the treatment is drained by the outer chamber drain pipe 93. The rinse treatment using pure water as described above may be omitted depending on the properties of the chemical liquid.

After the rinsing process, the wafer W is spin-dried at a higher speed (for example, about 1500 rpm) than when the rinsing process is performed. In this case, N2 gas is supplied to the upper surface of the wafer W by the rinse drying arm 53. Further, the lower surface supply path 75 supplies N 2 gas to the lower surface of the wafer W. At this time, the under plate 63 is also dried at the same time. Thus, both surfaces of the wafer W are spin dried.

After the drying process, the rinse drying arm 53 is moved into the rinse drying arm storage unit 44, and the rinse drying arm storage unit shutter 49 is closed. Then, the wafer W is unloaded from the substrate cleaning unit 12. That is, the mechanical shutter 4 for the unit chamber of the substrate cleaning unit 12
6, the outer chamber mechanical shutter 47 of the outer chamber 43 opens. Then, the wafer transfer device 18 advances the transfer arm 34 into the device to support the lower surface of the wafer W. Then, the transfer arm 34 is lifted to lift the wafer W from the support pins of the spin chuck 59.
To release the device from the device. in this case,
Since the under plate 63 is located at the retracted position,
A sufficient gap is formed between the under plate 63 and the position of the wafer W supported by the spin chuck 59, as in the case of loading, and the transfer arm 3
4 can receive the wafer W from the spin chuck 59 with a sufficient margin.

The cleaning of the chemical liquid supply system arm 50 can be appropriately performed by the chemical liquid supply system arm cleaning device 56 when the chemical liquid supply system arm 50 is stored in the chemical liquid arm storage section 44. IPA for wafer W, for example
After the supply of (rec) is completed, the chemical liquid supply system arm 50 moves into the chemical liquid arm storage unit 44, and the chemical liquid arm storage unit shutter 48 is closed. The chemical liquid supply system arm 50 moves to a predetermined position and is cleaned by the chemical liquid supply system arm cleaning device 56. During the cleaning of the chemical liquid supply system arm 50, the chemical liquid arm storage unit shutter 48 is kept closed to keep the chemical liquid arm storage unit 44 in a sealed state, and the cleaning liquid atmosphere is prevented from leaking to the unit chamber 42 and the outer chamber 43. Therefore, even if the wafer W is stored in the outer chamber 43, the chemical liquid supply system arm 50 can be cleaned. For example, if the chemical liquid supply system arm 50 is washed during the rinse process, the throughput can be improved. The cleaning of the rinse drying arm 53 can be appropriately performed by the rinse drying arm cleaning device 57 when the rinse drying arm 53 is stored in the rinse drying arm storage unit 45. For example, for wafer W, N
After the supply of the two gases is completed, the rinse drying arm 53 moves into the rinse drying arm storage unit 45, and the rinse drying arm storage unit shutter 49 is closed. The rinse drying arm 53 moves to a predetermined position, and the rinse drying arm cleaning device 57 moves.
Washed by. During the cleaning of the rinse drying arm 53, the rinse drying arm storage section shutter 49 is kept closed to keep the rinse drying arm storage section 45 in a sealed state, thereby preventing the cleaning liquid atmosphere from leaking to the unit chamber 42 and the outer chamber 43. Therefore, even if the wafer W is stored in the outer chamber 43, the rinse drying arm 53 can be cleaned. For example,
Throughput can be improved by cleaning the rinse drying arm 53 during the chemical treatment.

According to the substrate processing apparatus 12, the chemical liquid arm storage unit shutter 48 and the rinse drying arm storage unit shutter 49 store the chemical liquid supply system arm 50 having each supply nozzle and the rinse drying arm 53 on standby. Section and outer chamber 4 for processing the wafer W
Since the atmospheres of No. 3 are separated, there is no fear that the atmosphere generated from each supply nozzle in standby or the cleaning liquid atmosphere generated when cleaning each supply nozzle in standby influences the wafer W after processing. In addition, the chemical solution supply arm 50 on standby
There is no concern that the rinse drying arm 53 is contaminated by the chemical atmosphere generated during the wafer W processing or the chemical atmosphere during the wafer W processing.

An example of the preferred embodiment of the present invention has been described above, but the present invention is not limited to the embodiment described here. For example, as shown in FIG. 15, the unit chamber 4
The FFU 122 may be provided in the upper part and the exhaust mechanism 123 may be provided in the lower part. In this case, even if the processing liquid atmosphere in the outer chamber 43 leaks, it is discharged from the unit chamber 42 by the downflow formed by the FFU 122 and the exhaust mechanism 123. Therefore, when the processed wafer W is unloaded, there is less concern that the processing liquid atmosphere will contaminate the wafer W, and there is less concern that the processing liquid atmosphere will leak out of the unit chamber 42. Further, for example, the chemical solution arm storage unit 44 and the rinse drying arm storage unit 45 may each be provided with an exhaust mechanism.

As shown in FIGS. 16 and 17, a plurality of rectifying plates 130 may be provided on the inner wall of the outer chamber 43. When the spin chuck 59 or the top plate 60 rotates, an airflow is generated toward the inner wall of the outer chamber 43. When a plurality of straightening vanes 130 are provided in this manner, the straightening vanes 130 direct the airflow downward, so that the processing liquid or the processing atmosphere is smoothly discharged downward. Similarly, a plurality of flow straightening plates 131 may be provided on the inner wall of the inner cup 58. Also in this case, since the sloping plate 131 of the inner cup 58 directs the airflow downward, the processing liquid or the processing atmosphere is smoothly discharged downward.

As shown in FIG. 18, the under plate 6
A lower surface supply path 140 capable of supplying a treatment liquid such as a chemical solution or IPA or N2 is provided at the center of 3, and a lower surface supply path capable of supplying IPA, pure water, N2, or the like to the center of the under plate 63 and several peripheral portions. The structure may be provided with 141.
For example, as shown in FIG. 19, a discharge port 142 capable of discharging a chemical solution, IPA, N2, etc. is disposed in the center of the under plate 63, and discharge ports 143a, 143b, 143c capable of discharging IPA, pure water, N2, etc. May be appropriately dispersed and arranged at the center of the under plate 63, a position spaced apart from the center by 1/3 of the radius, a position spaced apart by 2/3 of the radius from the center, or the like. In addition, the discharge ports 143a, 143
It may be configured to be able to control the timing of ejection from b and 143c. Then, the discharge ports 143a, 143a, 1
From 43b and 143c, it is possible to gradually discharge chemicals, pure water, IPA, N2, etc. at different times.
For example, when pure water is discharged from the discharge ports 143a, 143b, 143c, the pure water discharged from the discharge port 143a at the center of the under plate 63 is 1/3 of the radius from the center.
Pure water discharged from the four discharge ports 143b arranged at distant positions is flushed toward the outer periphery of the wafer W. Four discharge ports 1 located at a position 1/3 of the radius away from the center
The pure water discharged from 43b pushes the pure water discharged from the discharge port 143c arranged at a position ⅔ of the radius away from the center in the outer peripheral direction of the wafer W. In this way, it is possible to control the pure water discharged from the discharge ports arranged on the inner side to push the pure water discharged from the discharge ports arranged on the outer side from the center of the wafer W to the outer periphery. Therefore, even when the wafer W is stopped, pure water can be efficiently swept away, and the same effect as when the wafer W is rotated can be enjoyed. When the wafer W is rotated, pure water can be more efficiently swept away, and the same effect as when the wafer W is rotated at a higher speed can be enjoyed. In this case, it is suitable for processing in which high-speed rotation cannot be performed.

Further, for example, the discharge ports 143a, 143b,
When N2 is discharged from 143c, first, the discharge port 143
a starts discharging, and the central surface of the wafer W is dried. After the drying process by the discharge port 143a is completed, the discharge port 143b arranged at a position apart from the center by ⅓ of the radius becomes N
Start discharging 2. At this time, if the discharge of N2 from the discharge port 143b is started at the time when the drying process is completed up to the position inside the discharge port 143b, the droplets attached to the outside of the discharge port 143b flow into the central surface. Since it does not exist, the drying process can be performed efficiently. And the discharge port 143
2/3 of the radius from the center after finishing the drying process by b.
The discharge port 143c arranged at a distant position starts discharging N2. Also at this time, if the discharge of N2 is started from the discharge port 143c at the time when the drying process is completed up to the position inside the discharge port 143c, the surface dried by the discharge ports 143a and 143b and the outer side of the discharge port 143c are discharged. Since the adhered droplets do not flow in, the drying process can be performed efficiently. Therefore, even if the wafer W is stopped, the drying process can be efficiently performed, and the same effect as when the wafer W is rotated can be obtained. When the wafer W is rotated, the drying process can be performed more efficiently, and the same effect as when the wafer W is rotated at a higher speed can be obtained. In this case, it is suitable for processing in which high-speed rotation cannot be performed.

The present invention is not limited to the substrate cleaning apparatus to which the cleaning liquid is supplied, but the substrate may be subjected to a process other than cleaning using various other process liquids. Also, the substrate is not limited to a semiconductor wafer, and other LC
It may be glass for D substrate, CD substrate, printed circuit board, ceramic substrate, or the like.

[0070]

According to the substrate processing apparatus of the present invention, the area where the supply means stands by and the area where the substrate processing is performed can be separated. Even if the processing liquid atmosphere or the processing gas diffuses from the supply means, the processing liquid atmosphere or the processing gas does not contaminate the other supply means stored in the supply means storage unit. Further, according to the substrate processing method of the present invention, it is possible to supply the processing liquid having high cleanliness to the substrate by cleaning the supply means. Further, the cleaning liquid atmosphere for cleaning the supply means is prevented from affecting the substrate in the outer chamber. It is possible to always supply a highly clean processing liquid to the substrate.

[Brief description of drawings]

FIG. 1 is a plan view of a cleaning system.

FIG. 2 is a side view of the cleaning system.

FIG. 3 is a cross-sectional view showing a schematic arrangement of a wafer transfer unit, a main wafer transfer device, a heating unit, and a cooling unit of the cleaning system.

FIG. 4 is a plan view of the substrate cleaning unit according to the exemplary embodiment of the present invention.

FIG. 5 is a cross-sectional view of the cleaning system according to the embodiment of the present invention.

FIG. 6 is an explanatory diagram of an under plate and an under plate shaft.

FIG. 7 is a plan view of an under plate.

FIG. 8 is a vertical cross-sectional view showing an enlarged upper portion of the outer chamber.

FIG. 9 is an explanatory diagram of a process of discharging the liquid droplets in the inner cup to a mist trap.

FIG. 10 is an explanatory diagram of a process of discharging the liquid droplets in the outer chamber to a mist trap.

FIG. 11 is an explanatory diagram of an IPA circulation unit and a processing liquid circulation unit.

FIG. 12 is an explanatory diagram of a process of piling a chemical solution on both surfaces of the wafer W.

FIG. 13 is an explanatory diagram of a step of cleaning both surfaces of the wafer W with a chemical solution.

FIG. 14 is an explanatory diagram of a process of supplying N2 to both surfaces of the wafer W.

FIG. 15 is an explanatory diagram in the case where an FFU and an exhaust mechanism are provided in the substrate cleaning unit according to the embodiment of the present invention.

FIG. 16 is a vertical cross-sectional view when a current plate is provided on the inner walls of the outer chamber and the inner cup.

FIG. 17 is an explanatory diagram when a current plate is provided on the inner walls of the outer chamber and the inner cup.

FIG. 18 is an explanatory diagram showing a modified example of the underplate and the underplate shaft.

FIG. 19 is a plan view showing a modified example of the under plate.

[Explanation of symbols]

C Carrier C W wafer 1 cleaning system 2 Cleaning section 3 loading / unloading section 4 in / out port 5 Wafer transfer section 7 Wafer transfer device 11 Extraction storage arm 12, 13, 14, 15 Substrate cleaning unit 18 Main wafer transfer device 34, 35, 36 transfer arms 42 unit chamber 43 Outer chamber 44 Chemical arm storage 45 Rinse drying arm storage 46 Mechanical shutter for unit chamber 46 'aperture 47 Mechanical shutter for outer chamber 47 'aperture 48 Shutter for chemical arm storage 48 'opening 49 Rinse drying arm shutter for storage 49 'opening 50 Chemical supply arm 53 Rinse drying arm 56 Chemical supply arm cleaning device 57 Rinse drying arm cleaning device 58 Inner cup 59 Spin chuck 60 top plate 61 chuck body 63 Under plate 86 N2 gas supply means 87 Inner cup discharge pipe 89 Inner cup mist trap 90 Inner cup mist trap exhaust pipe 92 Inner cup drainage recovery line 93 Outer chamber discharge pipe 94 Outer chamber mist trap 95 Outer chamber mist trap exhaust pipe 96 Outer chamber drainage recovery line

   ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 2H088 FA21 FA30 HA01                 2H090 JC19                 3B201 AA01 AB01 AB08 AB23 AB33                       AB42 AB44 BB21 BB92 BB93                       BB95 BB98 CA03 CC01 CC12                       CD11 CD22 CD33

Claims (10)

[Claims] 1. A substrate processing apparatus comprising a holding means for holding a substrate and a supply means for supplying a processing liquid or a processing gas to the substrate held by the holding means, wherein an outer chamber surrounding the holding means is provided. A substrate processing apparatus, characterized in that the supply means is provided outside the outer chamber, and an openable and closable opening through which the supply means comes in and out is provided in the outer chamber. 2. A substrate processing apparatus comprising: holding means for holding a substrate; and a plurality of supplying means for supplying a processing liquid or a processing gas to the substrate held by the holding means, each of the plurality of supplying means being provided. A substrate processing apparatus, comprising: a plurality of supply means storage units that are hermetically sealed and stored; and openable and closable openings through which the supply means are inserted and removed, respectively. 3. The substrate processing apparatus according to claim 2, further comprising an outer chamber surrounding the holding means. 4. The substrate processing apparatus according to claim 1, wherein an inner cup surrounding the holding means is provided inside the outer chamber. 5. A top plate relatively moving between a processing position close to the upper surface of the substrate held by said holding means and a position apart from the upper surface of the substrate held by said holding means. The substrate processing apparatus according to any one of claims 1 to 4. 6. An under plate which is relatively movable between a processing position close to the lower surface of the substrate held by said holding means and a position apart from the lower surface of the substrate held by said holding means. The substrate processing apparatus according to any one of claims 1 to 5. 7. A unit chamber surrounding the holding means and the supply means is provided.
6. The substrate processing apparatus according to item 6. 8. A method of processing a substrate by supplying a processing liquid or a processing gas to a substrate held inside an outer chamber by a supplying means, wherein the supplying means is moved to the outside of the outer chamber, A substrate processing method comprising: cleaning the supply means in a state of being isolated from the atmosphere inside the outer chamber. 9. The substrate processing method according to claim 8, wherein the supply unit is stored in the supply unit storage unit and cleaned. 10. The substrate processing method according to claim 8, wherein another step is performed inside the outer chamber during the cleaning of the supply unit.