JP2003282514A - Substrate treatment equipment and substrate treatment method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide substrate treatment equipment and a substrate treatment method wherein a method in which treatment is preformed by rotating an upper surface member together with a wafer and a method in which a treatment solution supply nozzle is moved to the treatment surface of a wafer and a treatment solution is supplied is performed. <P>SOLUTION: In the substrate treatment equipment 12 wherein the treatment solution is supplied to a substrate W and treatment is performed, a spin chuck 60 for holding the substrate W, and the upper surface member 90 which approaches the substrate W and covers the upper surface of the substrate are installed. The upper surface member 90 is made detachable to the spin chuck 60. As a result, the upper surface member 90 is engaged with the spin chuck 60, and they are rotated as a unit. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus and a substrate processing method for cleaning a substrate such as a semiconductor wafer or glass for LCD substrate.

[0002]

2. Description of the Related Art In a semiconductor device manufacturing process, for example, a processing system is used which performs processing such as cleaning and removal of a resist film on the surface of a semiconductor wafer (hereinafter referred to as "wafer"). As a substrate processing apparatus provided in such a processing system, there is known a single wafer processing apparatus that supplies a processing liquid to a wafer held horizontally and performs processing. A conventional single-wafer processing apparatus has a plate-shaped upper surface member close to the wafer upper surface during wafer processing, from the viewpoints of preventing wafer contamination due to particle adhesion and reducing processing fluid consumption. Was treated with the upper surface member covered. That is, a narrow gap is formed between the upper surface member and the wafer upper surface during processing,
If the gap is filled with a processing fluid such as a chemical solution or a dry gas, the upper surface of the wafer can be processed by supplying a small amount of the processing fluid. In this way, the amount of processing fluid consumed was suppressed.

[0003]

In the above substrate processing apparatus, it is conceivable to make the upper surface member rotatable. This has the effect of improving the performance of wafer cleaning and drying processes. However, if a rotary drive mechanism for rotating the upper surface member is installed in addition to the rotary drive mechanism for rotating the wafer, there is a problem of increased cost. Further, when the rotation driving mechanism for rotating the upper surface member is arranged above the wafer processing position, there is a concern that particles generated from the rotation driving mechanism may enter the periphery of the substrate. Further, if a method of processing by moving the processing fluid supply nozzle with respect to the upper surface of the wafer is desired, a cylinder for raising and lowering the upper surface member and the rotation driving mechanism is also generated from the cylinder if it is arranged above the processing position of the wafer. There is a concern that particles will enter the periphery of the wafer. Also,
When a method of supplying the processing fluid to the upper surface of the wafer is desired when the upper surface member is close to the wafer, the processing liquid cannot be supplied to the wafer unless the rotary shaft of the rotary drive mechanism is penetrated. There are challenges.

Accordingly, an object of the present invention is to provide a method for processing by rotating the upper surface member together with the wafer, and processing in a state where the upper surface member and the wafer are separated from each other, for example, moving a processing fluid supply nozzle to the processing surface of the wafer. It is an object of the present invention to provide a substrate processing apparatus and a substrate processing method capable of implementing a method for supplying a processing fluid.

[0005]

In order to solve the above problems, according to the present invention, there is provided a substrate processing apparatus for supplying a processing fluid to a substrate for processing, wherein a spin chuck for holding the substrate and a substrate are provided. An upper surface member is provided in close proximity to cover the upper surface, and the upper surface member is detachable from the spin chuck.
There is provided a substrate processing apparatus, characterized in that the upper surface member is engaged with the spin chuck to integrally rotate the upper surface member and the spin chuck.
In such a substrate processing apparatus, it is possible to perform a process in which the upper surface member is brought close to the upper surface of the wafer to rotate with the wafer and a process in which the upper surface member and the wafer are separated from each other.

In this substrate processing apparatus, the upper surface member is movable up and down with respect to the spin chuck, and one of the upper surface member and the spin chuck is provided with an engaging concave portion and the other is provided with an engaging convex portion. A structure in which the engaging concave portion and the engaging convex portion are engaged when the upper surface member is lowered with respect to the spin chuck, and the engaging concave portion and the engaging convex portion are disengaged when the upper surface member is raised. It is preferable that the engaging concave portion and / or the engaging convex portion be provided with a taper portion for facilitating the insertion of the engaging convex portion. In this case, the upper surface member can be supported by the spin chuck by its own weight. Further, when the engaging projection is engaged with the engaging recess from above or below, the engaging projection and the engaging recess should be kept engaged even when the spin chuck rotates in the horizontal plane. You can

Further, the substrate processing apparatus is provided with an upper surface member elevating mechanism for lowering the upper surface member to a position where it is engaged with the spin chuck and a position where it is lifted and lifted to a position where it is detached from the spin chuck. It is preferable. Further, the upper surface member elevating mechanism includes a support member that supports the upper surface member separated from the spin chuck, and the upper surface member is provided with an engaging portion that can be engaged with and disengaged from the support member. The engagement portion and the support member may be disengaged from each other in a state of being engaged with the spin chuck.

The engagement and disengagement of the support member is preferably performed by integrally rotating the upper surface member and the spin chuck. In this case, since the engaging portion and the supporting member are engaged and disengaged using the rotation driving mechanism of the spin chuck, it is not necessary to separately install a driving mechanism for the engaging and disengaging. On the other hand, the upper surface member elevating mechanism may include a clamp mechanism that holds the upper surface member.

Further, according to the present invention, a supply hole may be provided at the center of the upper surface member to allow a processing fluid supplied to the substrate to pass therethrough. In this case, the processing fluid can be supplied to the gap in a state where the upper surface member is brought close to the wafer to form the gap.

Further, one or more processing fluid supply nozzles for discharging the processing fluid to be supplied to the substrate are provided, and an arm for moving the processing fluid supply nozzle above the substrate at least from the center to the peripheral edge of the substrate is provided. Is preferred. Then, when the upper surface member is separated from the spin chuck, the processing fluid supply nozzle can be moved between the upper surface of the wafer and the upper surface member while rotating the wafer by the spin chuck. Therefore, for example, the processing liquid can be supplied to the entire upper surface of the wafer by ejecting the processing liquid from the processing fluid supply nozzle that moves above the rotating wafer. Further, at least one processing fluid supply nozzle that mixes the processing liquid with gas and discharges it onto the substrate may be provided.

Further, it is preferable that the arm can move the processing fluid supply nozzle from at least the center to the peripheral edge of the substrate. Furthermore, it is preferable that the arm moves the processing fluid supply nozzle above the substrate in a state where the upper surface member is separated from the spin chuck. That is, the processing fluid can be supplied to the entire upper surface of the wafer by rotating the wafer while discharging the processing fluid from the processing fluid supply nozzle.

Further, according to the present invention, a chamber surrounding the substrate, the spin chuck and the upper surface member,
A processing fluid supply nozzle storage unit for hermetically storing the processing fluid supply nozzle is provided, and an opening / closing opening for moving the processing fluid supply nozzle from the processing fluid supply nozzle storage unit into the chamber is provided. May be.

Further, it is preferable to provide a lower surface member which relatively rises and approaches the back surface of the substrate and lowers and separates from the back surface of the substrate.

Further, according to the present invention, there is provided a substrate processing method for supplying a processing fluid to a substrate for processing, wherein the substrate is held by a spin chuck while the upper surface member is raised, and the upper surface member is lowered. Then, the substrate, the spin chuck, and the upper surface member are brought close to the surface of the substrate and brought into engagement with the spin chuck, and a processing fluid is supplied to a gap formed between the upper surface member and the substrate, The substrate and the spin chuck are integrally rotated to process the substrate, the rotation of the substrate, the spin chuck, and the upper surface member is stopped, and the upper surface member is lifted and separated from the spin chuck to integrally form the substrate and the spin chuck. A substrate processing method is characterized in that the substrate is rotated to process the substrate, the rotation of the substrate and the spin chuck is stopped, and the holding of the spin chuck on the substrate is released. It is subjected.

Further, according to the present invention, after stopping the rotation of the substrate and the spin chuck, the upper surface member is lowered again to be brought close to the surface of the substrate and brought into a state of being engaged with the spin chuck. Processing liquid is supplied to a gap formed between the upper surface member and the substrate, the substrate, the spin chuck, and the upper surface member are rotated integrally to process the substrate, and the substrate, the spin chuck, and the upper surface member are processed. There is provided a substrate processing method, characterized in that the rotation is stopped, the upper surface member is lifted to be separated from the spin chuck, and then the holding of the spin chuck on the substrate is released.

When processing the substrate by integrally rotating the substrate and the spin chuck in a state where the upper surface member is lifted and separated from the spin chuck, a processing fluid is supplied between the upper surface member and the substrate. It is preferable that the nozzle is moved from at least the center to the peripheral edge of the substrate and the processing fluid is supplied from the processing fluid supply nozzle to the rotating substrate. In this case, the processing fluid can be supplied to the entire upper surface of the wafer.

When supplying the processing fluid to the gap formed between the upper surface member and the substrate, it is preferable that the upper surface member is brought into contact with the processing fluid supplied to the surface of the substrate. Further, when supplying the processing fluid to the gap formed between the upper surface member and the substrate, the upper surface member may not be brought into contact with the processing fluid supplied to the surface of the substrate.

When the substrate is processed, the lower surface member is further raised to be close to the back surface of the substrate, and the processing fluid is supplied to the gap formed between the lower surface member and the substrate, It is preferred to treat the back side.

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION A preferred embodiment of the present invention will be described below on the basis of a substrate cleaning unit as a substrate processing apparatus for cleaning a wafer as an example of a substrate. Figure 1
Is the substrate cleaning unit 12, 1 according to the present embodiment.
It is a top view of cleaning processing system 1 incorporating 3,14,15. FIG. 2 is a side view thereof. The cleaning processing system 1 includes a cleaning processing unit 2 that performs cleaning processing on the wafer W and thermal processing after the cleaning processing, and a loading / unloading unit 3 that loads / unloads the wafer W to / from the cleaning processing unit 2. .

The loading / unloading section 3 is provided with an in / out table provided with a mounting table 6 for mounting a container (carrier C) capable of accommodating a plurality of, for example, 25 wafers W substantially horizontally at a predetermined interval. It comprises a port 4 and a wafer transfer section 5 provided with a wafer transfer device 7 for transferring wafers between the carrier C mounted on the mounting table 6 and the cleaning processing section 2.

The wafer W is loaded and unloaded through one side surface of the carrier C, and the side surface of the carrier C is provided with an openable / closable lid. In addition, a shelf plate for holding the wafer W at a predetermined interval is provided on the inner wall, and a shelf plate 2 for accommodating the wafer W is provided.
Five slots are formed. The wafers W are accommodated one by one in each slot with the front surface (the surface on which the semiconductor device is formed) being the upper surface (the upper surface when the wafer W is held horizontally).

On the mounting table 6 of the in / out port 4,
For example, three carriers can be arranged in the Y direction on the horizontal plane and placed at a predetermined position. The carrier C is placed with the side surface provided with the lid facing the boundary wall 8 side between the in / out port 4 and the wafer transfer unit 5. A window 9 is formed on the boundary wall 8 at a position corresponding to the mounting location of the carrier C, and a window opening / closing mechanism for opening / closing the window 9 with a shutter or the like is provided on the wafer transfer unit 5 side of the window 9. 10 are provided. The window opening / closing mechanism 10 can also open / close the lid provided on the carrier C.

The wafer transfer device 7 provided in the wafer transfer section 5 is movable in the Y and Z directions, and X-
It is configured to be rotatable in the Y plane (θ direction). Further, the wafer transfer device 7 has a take-out and storage arm 11 for holding the wafer W, and the take-out and storage arm 11 is slidable in the X direction. In this way, the wafer transfer device 7 accesses the slots at any height of all the carriers C mounted on the mounting table 6, and the upper and lower two wafer transfer units 16 disposed in the cleaning processing unit 2 are arranged. , 17
The wafer W can be transferred from the side of the in / out port 4 to the side of the cleaning processing section 2 and vice versa, from the side of the cleaning processing section 2 to the side of the in / out port 4.

The cleaning processing unit 2 includes a main wafer transfer device 18
And wafer transfer units 16 and 17 on which the wafer W is temporarily placed in order to transfer the wafer W to and from the wafer transfer unit 5, and the four substrate cleaning units 12 and 13 according to the present embodiment. , 14, 15 and a heating / cooling unit 19 including three heating units that heat-treat the wafer W after cleaning and a cooling unit that cools the heated wafer W. The main wafer transfer device 18 includes the wafer transfer units 16 and 17, the substrate cleaning unit 1
All units 2, 3, 14, 15 and heating / cooling unit 19 are arranged so as to be accessible.

The cleaning processing unit 2 is an electric equipment unit 23 which is a power source for operating the entire cleaning processing system 1.
And a machine control unit 24 for controlling the operation of the various devices arranged in the cleaning processing system 1 and the cleaning processing system 1 and a predetermined processing liquid to be sent to the substrate cleaning units 12, 13, 14, 15. Chemical liquid storage unit 25 for storage
And are provided. The electrical unit 23 is connected to a main power source (not shown). A fan filter unit (FFU) for downflowing clean air to each unit and the main wafer transfer device 18 is provided on the ceiling of the cleaning processing unit 2.
26 are provided.

Each of the wafer transfer units 16 and 17 temporarily mounts the wafer W in order to transfer the wafer W to and from the wafer transfer section 5, and these wafer transfer units 16 and 17 are provided. They are arranged in a two-tier stack. For example, the lower wafer transfer unit 17 is used to place a wafer W to be transferred from the in / out port 4 side to the cleaning processing section 2 side,
The upper wafer transfer unit 16 can be used to place the wafer W to be transferred from the cleaning processing unit 2 side to the in / out port 4 side.

The main wafer transfer device 18 includes a cylindrical support 30 rotatable by a rotational driving force of a motor (not shown),
The wafer carrier 31 is provided so as to be movable up and down in the Z direction along the inside of the cylindrical support 30. The wafer carrier 31 is configured to rotate integrally with the rotation of the tubular support 30, and three carrier arms 34 arranged in multiple stages that can independently move back and forth. ，
35 and 36 are provided.

Substrate cleaning units 12, 13, 14, 15
As shown in FIG. 2, two units are arranged in each of the upper and lower stages. As shown in FIG. 1, the substrate cleaning unit 1
The substrate cleaning units 1 and 2 and the substrate cleaning units 14 and 15 have a symmetrical structure with respect to the wall surface 41 forming the boundary thereof, except that they are symmetrical.
2, 13, 14, and 15 have substantially the same configuration.
Therefore, the structure of the substrate cleaning unit 12 will be described in detail below as an example.

FIG. 3 is a plan view of the substrate cleaning unit 12, and FIG. 4 is a vertical sectional view thereof. In the unit chamber 45 of the substrate cleaning unit 12, an outer chamber 46 for accommodating the wafer W and processing it with a processing fluid is provided.
Is provided. An opening 50 is formed in the unit chamber 45, an opening 52 is formed in the side wall 46 a of the outer chamber 46, and the opening 50 and the opening 52 are formed in the opening 47.
Are in communication with each other. Further, a mechanical shutter 53 that opens and closes the opening 52 by moving up and down by a cylinder drive mechanism 54 such as an air cylinder is provided. For example, the mechanical shutter 53 is opened when the wafer W is carried in and out of the outer chamber 46 from the opening 47 by the carrier arm 34. The mechanical shutter 53 opens and closes the opening 52 from the inside of the outer chamber 46. That is, even if the pressure inside the outer chamber 46 becomes positive, the atmosphere inside the outer chamber 46 does not leak outside.

As shown in FIG. 4, the outer chamber 4
A spin chuck 60 that holds the wafer W in a substantially horizontal state is arranged in the unit 6. The wafer W is held by the spin chuck 60 at the peripheral portion with the front surface, which is a processing surface on which semiconductor devices are formed, as the upper surface.

As shown in FIG. 5, the spin chuck 60 is composed of a chuck plate 65, a rotary cylinder 67 connected to the bottom of the chuck plate 65, and three holding members 70 that come into contact with the peripheral edge of the wafer. Further, the motor 72 connected to the lower portion of the rotary cylinder 67 rotates the rotary cylinder 67, thereby rotating the entire spin chuck 60. The wafer W held by the spin chuck 60 rotates in a horizontal plane together with the spin chuck 60.

As shown in FIG. 3, the holding members 70 are arranged at three locations around the chuck plate 65 with the central angle of 120 ° around the center of the substantially disk-shaped wafer W. The wafer W is held from the peripheral edge by the inner surfaces of the three holding members 70. Further, the chuck plate 65 is provided with three support pins 71 for supporting the wafer W at a height at which the wafer W is held. As shown in FIG. 3, the three support pins 71 are in contact with the back surface of the wafer W so that the center angle is 120 °.
It is located in the place. In addition, as shown in FIG. 6, the inner surface of the holding member 70 is formed with an upper slope 70a and a lower slope 70b that are inclined toward the center of the wafer W in directions away from each other. Wafer W
When the peripheral edge of the wafer W is sandwiched and held from the outside, the peripheral edge of the wafer W is sandwiched and held between the upper slope 70a and the lower slope 70b. In this case, the peripheral portion of the wafer W can be reliably held from above and below.

When loading the wafer W into the substrate cleaning unit 12, first, as shown in FIG.
Supports the peripheral portion of the wafer W from the back surface. At this time, the upper portions of the three holding members 70 are separated from each other and moved outward, and stand by at a position where they do not contact the wafer W transferred from the transfer arm 34 to the support pins 71. When the wafer W is supported by the three support pins 71, the
As shown in (b), the three holding members 70 are moved inward so that the peripheral edge portion of the wafer W is moved to the upper slope 70a and the lower slope 70b.
Hold it in between. At this time, the wafer W is lifted from the support pins 71. When the wafer W is unloaded from the substrate cleaning unit 12, the three holding members 70 are first moved to the outside to release the holding of the holding members 70. Then, the wafer W is placed on the support pins 71. Thus, the wafer W supported by the support pins 71 is transferred to the transfer arm 34.

As shown in FIG. 5, the motor 72 is arranged inside a drive mechanism housing chamber 74 formed below the wafer W held by the spin chuck 60. The drive mechanism housing chamber 74 surrounds the periphery and upper portion of the motor 72 and prevents particles generated from the motor 72 from entering the wafer W side.

The outer chamber 46 surrounds the wafer W held by the spin chuck 60 from above and around. That is, the outer chamber 46
Is provided with an annular side wall 46a that surrounds the periphery of the wafer W and a ceiling portion 46b that covers the upper surface of the wafer W. Isolate.

The side wall 46 of the outer chamber 46
a is a wafer W held by the spin chuck 60.
The inclined portion 46c is formed at the height where is located, and the wafer W is surrounded by the inclined portion 46c. Since the inclined portion 46c is inclined outward from above the height at which the wafer W is located, droplets of the processing liquid scattered around the wafer W hit the inclined portion 46c and fall downward. Further, the openings 50 and 52 are formed in the spin chuck 6
The wafer W held by 0 is opened at a position where the wafer W is positioned, and the mechanical shutter 53 is a part of the inclined portion 46c. For example, when the wafer W is transferred to and from the spin chuck 60 by the transfer arm 34, the mechanical shutter 53 is opened and the wafer W and the transfer arm 34 are horizontally moved from the opening 47.

As shown in FIGS. 3 and 4, in the unit chamber 45, a nozzle storage chamber 77 having a closed structure adjacent to the outer chamber 46 is installed. An arm 79, a processing fluid supplier 80, and an arm rotating device 82 are housed in the nozzle storage chamber 77. Further, an opening 84 is provided between the nozzle storage chamber 77 and the outer chamber 46, and further, a mechanical shutter 86 for the nozzle storage chamber that allows the opening 84 to be opened and closed from inside the nozzle storage chamber 77 is provided. . The nozzle shutter chamber mechanical shutter 86 is driven by a rotation drive mechanism 88 including a motor and the like installed in the nozzle storage chamber 77.

The processing fluid feeder 80 is attached to the tip of an arm 79, and an arm rotating device 82 having a motor (not shown) is attached to the base end of the arm 79. The arm 79 rotates in a horizontal plane about the arm rotating device 82 by the drive of a motor (not shown), moves into the outer chamber 46 from the opening 84, and the processing fluid supply unit 80 moves at least above the center of the wafer W. It can be rotated to where it is located. In this way, by rotating the arm 79, the processing fluid supplier 80 is moved from at least the center to the peripheral edge of the wafer W in the outer chamber 46. The processing fluid supply device 80 uses, as processing fluid for processing the wafer W, a chemical liquid such as SC-1 liquid (a mixed solution of ammonia water, hydrogen peroxide solution and pure water), N 2 gas, pure water (DIW), It is also possible to discharge a mixed fluid of N2 gas and pure water.

As shown in FIG. 4, the outer chamber 4
Above the position where the wafer W is held by the spin chuck 60 in FIG. The top plate 90 is formed in a size capable of covering the upper surface of the wafer W held by the spin chuck 60.

As shown in FIGS. 7 and 8, the lower surface of the top plate 90 is formed to cover the entire upper surface of the wafer W.
A surface 91 protruding downward is formed. The peripheral portion (edge) 91 ′ of the surface 91 is formed slightly outside the peripheral edge portion of the upper surface of the wafer W. Also, the top plate 90
Engaging convex members 95 are provided at two locations facing each other around the center of the top plate 90 on the periphery of the. The engaging convex member 95 is a columnar member that is vertically connected to the top plate 90, and engages with an engaging concave member 97 described later at the lower end thereof. Also, the top plate 90
Is arranged above the wafer W, a sufficient gap is formed between each engaging convex member 95 and the peripheral edge of the wafer W held by the spin chuck 60. Even when the top plate 90 moves up and down with respect to the wafer W held by the spin chuck 60 and the spin chuck 60, the engaging convex members 95 are arranged so as not to interfere with the spin chuck 60 and the wafer W.

On the other hand, the engaging recessed material 97 is fixed to two places around the chuck plate 65. Each engaging recess material 9
Reference numeral 7 denotes a member having a concave portion 98 that opens upward as shown in FIG. 9, and is arranged so that the lower ends of the engaging convex members 95 are inserted into the concave portions 98 from above. Further, each engagement recess member 97 is arranged below the height of the peripheral portion of the wafer W held by the spin chuck 60. Further, the inner side surface of the recess 98 is a tapered surface that spreads from the lower side to the upper side, and the lower end of each prism-shaped engaging convex member 95 can be smoothly inserted from above.

When the lower surface of each engaging convex member 95 is brought into contact with the lower surface of each concave portion 98, each engaging convex member 95 can be supported and engaged by each engaging concave member 97. Since the engaging convex members 95 and the engaging concave members 97 engage with each other at two locations facing each other around the center of the top plate 90, the top plate 90 is stably above the wafer W held by the spin chuck 60. Supported.
In this way, the top plate 90 is engaged with the spin chuck 60 by utilizing the own weight of the top plate 90. Further, the top plate 90 is configured to be freely engageable with and disengageable from the spin chuck 60.

The top plate 90 is attached to the spin chuck 60.
When the spin chuck 60 is rotated by the motor 72 described above, the top plate 90 can be rotated integrally with the spin chuck 60. Also,
When the spin chuck 60 holds the wafer W,
Spin chuck 60, wafer W, and top plate 9
0 rotates integrally. In this way, the top plate 9
0 is rotated by the motor 72, and it is not necessary to separately install a rotation drive mechanism such as a motor for rotating the top plate 90 in addition to the motor 72. That is, compared with the case where the top plate 90 and the rotation drive mechanism of the spin chuck 60 are separately provided, the cost required for the rotation drive mechanism can be significantly reduced. In addition, particles generated from the motor are reduced. Then, a rotation drive mechanism for rotating the top plate 90 is provided above the processing position (holding position) of the wafer W, for example, in the outer chamber 4.
6 is not installed on the upper part (upper surface of the ceiling part 46b) or the like, there is no concern that particles generated from the rotation drive mechanism will enter the periphery of the wafer, and the influence of the particles on the wafer W can be prevented.

As shown in FIG. 10, on the outside of the outer chamber 46, a top plate 90 is moved down to a position where the top plate 90 is lowered to engage with the spin chuck 60 and a position where the top plate 90 is raised to be removed from the spin chuck 60. A lifting mechanism 100 is provided. The top plate elevating mechanism 100 includes a top plate elevating cylinder 102, an elevating rod 104, and a supporting rod 1 which will be described below.
06, lifting member 108, top plate lifting support member 1
It consists of 10. The top plate lifting mechanism 1
Even if particles are generated by driving 00, they do not enter the periphery of the wafer W housed inside the outer chamber 46.

The top plate elevating cylinder 102 is arranged in the lower part of the unit chamber 45, and the elevating rod 104 arranged beside the outer chamber 46.
Up and down in the longitudinal direction. Also, the outer chamber 4
A support rod 106 is provided at a position facing the elevating rod 104 with the 6 interposed therebetween. The support rod 106 is
The inside of the rod guide 107 provided on the outer surface of the outer chamber 46 is configured to be movable up and down. An elevating member 108 whose both ends are supported by the upper end of the elevating rod 104 and the upper end of the supporting rod 106 is disposed above the outer chamber 46. That is, the lifting member 108 moves up and down between the ceiling surface of the unit chamber 45 and the ceiling portion 46 b of the outer chamber 46 by driving the top plate lifting cylinder 102. Also, from the ceiling portion 46b to the outer chamber 4
Two top plate lifting support members 110 penetrate through the inside of the 6 and two top plate lifting support members 110
Are arranged such that their upper ends are fixed to the elevating member 108, and their lower ends move up and down inside the outer chamber 46.

Two top plate lifting support members 110
Collars 111 as shown in FIG. On the other hand, on the upper surface of the top plate 90,
As shown in FIGS. 7 and 8, two top plate side engaging portions 113 which are respectively engageable with and disengageable from each collar 111 are provided. The pair of top plate side engaging portions 113
And the top plate lifting support member 110, a flange 111 at the lower end
Are configured to be engaged with each other at positions facing each other with the center of the upper surface of the top plate 90 as the center, and the top plate 90 can be stably supported. When the top plate 90 is engaged with the top plate lifting support member 110, the top plate lifting cylinder 102 is driven to move the top plate 90 to the lifting rod 104, the support rod 106, the lifting member 108, and the top plate lifting support member 110. It can be raised and lowered as a unit.

A rotary drive mechanism for rotating the top plate 90 is not installed above the outer chamber 46. Further, the top plate lifting cylinder 102 is arranged in the lower part of the unit chamber 45, and the top plate 9 is located above the processing position of the wafer W.
The rotation drive mechanism of the top plate 90 and the particles generated from the cylinders are generated around the wafer as compared with the case where the rotation drive mechanism of 0 and the top plate 90 and the cylinder for vertically elevating the rotation drive mechanism of the top plate 90 are arranged. It is possible to suppress the influence of particles on the wafer W without worrying about entering the wafer W.

As shown in FIG. 11, the top plate 90
A hole 121 into which the collar 111 is inserted is provided on the upper surface of the. The hole 121 is formed in such a size that the collar 111 can be relatively moved inside in the rotation direction of the top plate 90. At the top of the hole 121, the hole 12
The lid 123 that covers a part of 1 is fixed. Further, a notch portion 124 is provided which penetrates the lid portion 123 from the upper surface to the lower surface. An inlet / outlet 126 is formed on a side surface of the lid portion 123 so that the collar 111 and the top plate elevating / lowering support member 110 can be relatively inserted into and removed from the notch portion 124. Both sides of the entrance / exit 126 are tapered portions 131 that spread outward from inside the entrance / exit 126.
The collar 111 can be easily inserted into the notch portion 124 from 26.

Further, a fitting groove 128 for fitting the side surface of the top plate elevating and lowering support member 110 is formed in the back of the notch 124. Below the fitting groove 128, a flange fitting groove 133 into which the flange 111 is fitted is provided.
For example, the collar 111 is inserted from the entrance / exit 126 into the notch 124.
And after inserting the top plate lifting support member 110,
The collar 111 is lowered into the hole 121, and the spin chuck 6
When the top plate 90 is rotated counterclockwise by rotating 0, the top plate lifting support member 11
0 moves clockwise relative to the fitting groove 128,
It fits in the fitting groove 128. After that, when the collar 111 is raised, the collar 111 is fitted into the collar fitting groove 133. Fit the top plate lift support member 110 into the fitting groove 1
When the top plate elevating and lowering support member 110 is lifted with the flange 111 fitted in the flange fitting groove 133, the fitting groove 128 has a size that does not allow the flange 111 to pass through. The upper surface of is engaged with the upper surface of the collar fitting groove 133.

The above two top plate side engaging portions 113
Are holes 121, lids 123, and notches 12, respectively.
4, an inlet / outlet 126, a fitting groove 128, a taper portion 131, and a flange fitting groove 133. Hereinafter, a method of engaging and disengaging the top plate lifting support member 110 and the top plate side engaging portion 113 will be described.

When engaging the top plate lifting support member 110 and the top plate side engaging portion 113, first,
Each top plate lifting support member 110 is made to stand by at the front position on the counterclockwise (CCW) side of each engaging top plate side engaging portion 113, that is, the front position of each inlet / outlet 126. That is, the spin chuck 60 and the top plate 90 are stopped so that each top plate side engaging portion 113 waits at a predetermined position, each top plate elevating and lowering supporting member 110 is lowered, and the lower surface of each collar 111 is top plate. 90 Close to the upper surface. Then, by rotating the spin chuck 60 and the top plate 90 integrally in the counterclockwise direction by a predetermined amount, the collars 111 and the top plate lifting support members 110 are relatively moved with respect to the top plate side engaging portions 113. It is moved in the clockwise direction (CW) and relatively inserted into each notch 124 from each inlet / outlet 126. Furthermore, each top plate lifting support member 11
By lowering 0, each collar 111 is lowered into each hole 121. After that, when the spin chuck 60 and the top plate 90 are further rotated slightly counterclockwise,
Each of the collars 111 relatively moves in the holes 121 in the clockwise direction, and each of the top plate elevating and lowering support members 110 moves in the clockwise direction relative to each of the fitting grooves 128 to be fitted therein. Then, when each top plate elevating / lowering support member 110 is raised, each collar 111 is raised from within each hole 121 and fits into each collar fitting groove 133. As a result, the top plate side engaging portions 113 and the top plate elevating / lowering support members 110 are engaged with each other, and the top plate 90 can be raised. In addition, the top plate elevating and lowering support member 110 and the collar 111 are lowered from above the notch portion 124,
You may make it insert in each hole 121.

Further, the top plate 90 is engaged with the spin chuck 60, and the top plate lifting support member 110
And when disengaging the top plate side engaging portion 113,
First, the top plate 90 is engaged with the spin chuck 60. That is, the rotation of the spin chuck 60 moves each engagement concave member 97 to a predetermined engagement position, and the top plate 90 supported by the top plate elevating / lowering support member 110.
Is lowered to engage each engaging convex member 95 with each engaging concave member 97. Then, the top plate lifting support member 110
The brim 111 is lowered into the hole 121 to release the fitting.
Then, each collar 111 is relatively moved into each hole 121 in the opposite direction to the engagement. That is, for example, by integrally rotating the spin chuck 60 and the top plate 90 in the slightly clockwise direction, each collar 111 is made to have each hole 1.
The top plate lifting / lowering support members 110 move in the counterclockwise direction relative to each other in the counterclockwise direction and move in the counterclockwise direction with respect to the fitting grooves 128 to release the fitting.
Then, by driving the top plate lifting mechanism 100,
The top plate lifting support member 110 and the collar 111 are provided with holes 1
It is raised from inside 21 to the inside of the notch 124, and as it is, rises above the notch 124 and retreats. In this way, each top plate lifting support member 110 and each top plate side engaging portion 113 can be disengaged. When the top plate lifting support member 110 and the brim 111 are retracted from the notch 124, the spin chuck 6
0 and the top plate 90 may be further rotated in the clockwise direction so as to relatively pass through the inlets / outlets 126 in the counterclockwise direction.

As described above, the top plate elevating / lowering support member 110 is configured to be engageable with and disengageable from the top plate 90. In addition, each top plate lifting support member 1
The engagement and disengagement of 10 with each top plate side engaging portion 113 can be performed by engaging the spin chuck 60 and the top plate 90 and rotating the spin chuck 60 and the top plate 90 integrally.

Top plate elevating mechanism 1 by engaging top plate elevating support member 110 and top plate 90.
When 00 is driven, the top plate 90 can be moved up and down with respect to the spin chuck 60. Further, when the top plate 90 is moved up and down with respect to the spin chuck 60 while the spin chuck 60 holds the wafer W, the top plate 90 is lowered to a position close to the wafer W (dashed line) and raised. Let the wafer W
Can be moved up and down to a position (solid line) separated from. Further, as the top plate 90 is moved up and down, the engaging convex members 95 are inserted into and removed from the concave portions 98 of the engaging concave material 97. That is, the top plate 90 and the spin chuck 60 can be engaged and disengaged.

A method for engaging and disengaging the top plate 90 and the spin chuck 60 will be described below. When engaging the top plate 90 and the spin chuck 60, first, the engagement concave members 97 are moved below the engagement convex members 95 raised by the top plate elevating mechanism 100. That is, by rotating the spin chuck 60,
Each engagement recess member 97 is moved to a predetermined engagement position. Then, when the top plate 90 is lowered, the lower ends of the respective engaging convex members 95 can be inserted into the concave portions 98 of the respective engaging concave members 97. In this way, each engaging convex member 9
5 and each engagement recess member 97 are engaged. That is, the top plate 90 is engaged with the spin chuck 60. On the other hand, when the top plate 90 and the spin chuck 60 are disengaged, first, the top plate lifting support members 110 and the top plate side engaging portions 113 are engaged with each other. Then, when the top plate 90 is moved up by driving the top plate elevating mechanism 100, each engaging convex member 95 retreats from each concave portion 98, and each engaging convex member 95 and each engaging concave member 97 can be separated. it can. That is, the top plate 90 is separated from the spin chuck 60.

The top plate 90 is attached to the spin chuck 60.
To the top plate lifting support member 11
When 0 is disengaged from each top plate side engaging portion 113, the top plate 90 is supported only by the spin chuck 60. When the spin chuck 60 is rotated in this state, the top plate 90 and the spin chuck 60 can be integrally rotated. On the other hand, the top plate 90
In the state in which the
Spin chuck 60 without rotating top plate 90
The wafer W can be integrally rotated.

When the top plate 90 is engaged with the spin chuck 60 while the spin chuck 60 holds the wafer W, the top plate 90 comes close to the upper surface of the wafer W. At this time, a narrow gap of, for example, about 1 mm is formed between the lower surface of the top plate 90 and the upper surface of the wafer W. On the other hand, when the top plate 90 is detached from the spin chuck 60 and the top plate 90 is raised, the lower surface of the top plate 90 is separated from the upper surface of the wafer W. At this time, between the lower surface of the top plate 90 and the upper surface of the wafer W, for example, 10
A space having a height of about 0 mm is formed. Thus, by forming a sufficient space between the lower surface of the top plate 90 and the upper surface of the wafer W, the processing fluid supply unit 80 is moved between the lower surface of the top plate 90 and the upper surface of the wafer W, and the upper surface of the wafer W is moved. A processing fluid can be provided. In addition, when the wafer W is transferred to and from the spin chuck 60 by any one of the transfer arms 34, 35, or 36, the wafer W can be transferred to the spin chuck 60 with a sufficient margin.
Can be given and received.

The processing fluid feeder 80 and the arm 79
When moving the wafer W above the wafer W, for example, as shown in FIG. 3, the arm 79 can rotate above the wafer W from between the two engaging convex members 95 facing each other at the peripheral edge of the wafer W. As described above, the engaging convex member 95 and the engaging concave member 9
Place 7. That is, by rotating the top plate 90 and the spin chuck 60, the engaging convex member 95 and the engaging concave member 97 are moved to a position where they do not contact the processing fluid feeder 80 and the arm 79, and after the rotation is stopped, the top plate 90 is spun. The two engaging convex members 95 are released from the chuck 60.
The processing fluid supply device 80 is moved above the wafer W from between the stop positions. Further, the processing fluid supplier 80
Also, the two engaging convex members 95 may be raised to a height where they do not contact the arm 79. Similarly, when the wafer W is transferred to and from the spin chuck 60, the engaging convex member 95 or the engaging concave member 97 is arranged at a position that does not contact the transfer arms 34, 35 or 36 and the transferred wafer W. .

As shown in FIGS. 7 and 8, at the center of the top plate 90, a supply hole 140 for passing a processing fluid to be supplied to the wafer W is provided. That is, the wafer W
When the processing fluid is supplied to the wafer W, the processing fluid can be supplied from above the supply hole 140 to the vicinity of the center of the wafer W. Around the supply hole 140, a taper portion 142 that is inclined downward from the center side of the top plate 90 toward the outer peripheral side is formed.

When a processing fluid such as a chemical solution or pure water is supplied from the processing fluid supplier 80 to the upper surface of the wafer W, the processing fluid discharged from the processing fluid supplier 80 is supplied from the supply hole 140 to the wafer W.
While the spin chuck 60, the top plate 90 engaged with the spin chuck 60, and the wafer W held on the spin chuck 60 are integrally rotated while being supplied to the vicinity of the central portion of the spin chuck 60. That is, the processing fluid is caused to flow from the vicinity of the central portion of the wafer W toward the outer circumference by the centrifugal force generated by the rotation of the wafer W. Since the top plate 90 is engaged with the spin chuck 60 in the state where a narrow gap is formed between the lower surface of the top plate 90 and the upper surface of the wafer W, only the processing fluid can be interposed in the gap. Therefore, the wafer W can be processed with a small amount of processing fluid. In this case, if the peripheral edge portion 91 ′ of the surface 91 formed on the lower surface of the top plate 90 is formed so as to be positioned slightly outside the peripheral edge portion of the wafer W, the liquid film of the chemical solution is formed on the peripheral edge portion of the wafer W. It has the effect of being easy to form.

As shown in FIG. 12, the processing fluid supply device 80 includes processing liquid supply nozzles 151 for supplying a chemical liquid and a rinse liquid, a two-fluid mixing nozzle 155 for supplying a mixed fluid, and a drying device. Gas supply nozzle 157
It has and. The treatment liquid supply nozzle 151, the fluid mixing nozzle 155, the dry gas supply nozzle 157 are the arms 7.
It is supported at the tip of 9.

The processing liquid supply nozzle 151 supplies, for example, SC-1 liquid (a mixed solution of ammonia, hydrogen peroxide and water) as a chemical liquid. Further, for example, pure water is supplied as the rinse liquid. The processing liquid supplied by the processing liquid supply nozzle 151 is
Either SC-1 or pure water is switched by a switching means (not shown). Further, the processing liquid supply nozzle 151 moves above the wafer W or above the top plate 90 by the rotation of the arm 79. When supplying the chemical liquid or the rinse liquid to the wafer W, as shown in FIG. 13, the processing liquid supply nozzle 151 is moved above the supply hole 140 in a state where the top plate 90 is lowered, and the processing liquid supply nozzle 151 is moved to the vicinity of the central portion of the wafer W. The treatment liquid supply nozzle 151 ejects the chemical liquid or the rinse liquid.

Inside the two-fluid mixing nozzle 155, a pure water feed passage 161 for passing pure water is provided, and at the tip of the two-fluid mixing nozzle 65, a discharge port 162 is provided. The pure water sent from the pure water supply passage 161 is discharged downward from the discharge port 162. Further, inside the two-fluid mixing nozzle 155, an N
An N2 gas delivery passage 164 for delivering two gases is provided. A portion where the pure water feed passage 161 and the N2 gas feed passage 164 are connected is a mixing portion for mixing the pure water and the N2 gas. Here, pressure is applied to the pure water by the N2 gas, so , N2 gas and pure water pressurized by N2 gas are mixed and discharged. That is, the pure water can be supplied from the discharge port 162 so as to be sprayed with pure water. The two-fluid mixing nozzle 155 has an arm 7
The rotation of 9 moves the wafer W upward. Note that CO ₂ may be dissolved in the pure water supplied from the pure water supply passage 161. In this case, there is an effect of reducing static electricity.

When the wafer W is processed using the mixed fluid, as shown in FIG. 14, the top plate 90 is detached from the spin chuck 60 and the wafer W is rotated integrally with the spin chuck 60 while the arm 79 is being rotated. The rotation of moves the two-fluid mixing nozzle 155 from at least the center of the wafer W to the peripheral edge, and supplies the mixed fluid to the entire upper surface of the wafer W. In this way, by supplying the mixed fluid so that it is sprayed over the entire upper surface of the wafer W, the particles on the upper surface of the wafer W are blown away by the mixed fluid and are effectively removed.

The two-fluid mixing nozzle 155 and the treatment liquid supply nozzle 151 are arranged in this order from the peripheral side of the wafer W toward the outside in a state where the arm 79 is housed in the nozzle storage chamber 77. There is. That is, when the arm 79 rotates from the center side of the wafer W to the peripheral side, the two-fluid mixing nozzle 155 causes the processing liquid supply nozzle 15 to move.
1 is configured to move. Thus, for example, when the rinse liquid is supplied from the processing liquid supply nozzle 151 to be processed and then the rinse liquid, particles and the like are removed from the wafer W by the mixed fluid supplied from the two-fluid mixing nozzle 155, during the processing with the mixed fluid. Even if the processing liquid such as the rinse liquid drops from the processing liquid supply nozzle 151, the dropped processing liquid can be blown off to the outside of the wafer W by the mixed fluid. Therefore, the dropped processing liquid is prevented from adhering to and remaining on the wafer W.

The dry gas supply nozzle 157 supplies, for example, N 2 gas as a dry gas. Further, the dry gas supply nozzle 157 moves above the wafer W by the rotation of the arm 79.

In this substrate cleaning unit 12, a process is performed in which a narrow gap is formed between the top plate 90 and the upper surface of the wafer W, and a process fluid is supplied to the gap, and the process fluid supplier 80 rotates the wafer W. Can be moved above the upper surface of the wafer W to supply the processing fluid.

The upper surface of the wafer W is covered with the top plate 90 except for the supply hole 140. After the SC-1 supply or the pure water supply as the rinse liquid, the SC-1 or the pure water remains in the treatment liquid supply nozzle 151, and the treatment liquid supply nozzle 151 is retreating from above the supply hole 140 during the movement. From the processing liquid supply nozzle 151 to SC-
1 or pure water droplets may fall, but these droplets are received on the upper surface of the top plate 90 and the wafer W
Will not adhere to. Especially around the supply hole 140,
The top plate 90 with the periphery of the supply hole 140 as a high position
Since the taper portion 142 inclines downward toward the outer periphery of the top plate 90, for example, when a droplet drops on the upper surface of the taper portion 142, the droplet is directed along the taper portion 142 toward the outer periphery of the top surface of the top plate 90. It flows down. Therefore,
There is no risk that liquid droplets will enter the supply hole 140. In addition, the liquid droplets are formed on the outside of the tapered portion 142 by the top plate 90.
Even if it falls on the upper surface of the
Since it is formed in a convex shape so as to surround 0, the liquid droplet does not enter the supply hole 140. Further, SC-1 and pure water that have dropped onto the top of the top plate 90 flow to the outer peripheral side of the top plate 90 when the top plate 90 rotates and are discharged to the periphery of the top plate 90.

As shown in FIG. 4, below the wafer W held by the spin chuck 60, an under plate 170 as a lower surface member that is close to the wafer W from below and covers the lower surface (back surface) of the wafer W is arranged. Set up. In addition, as shown in FIG.
The under plate 17 is inserted through the cavity provided inside 7.
An under plate shaft 171 that supports 0 is provided. The under plate shaft 171 is fixed to the upper surface of the horizontal plate 174, and the horizontal plate 174 is
It is vertically moved up and down integrally with the under plate shaft 171 by an under plate lifting mechanism 175 including an air cylinder or the like. Therefore, the under plate 170 moves downward to stand by while being separated from the lower surface of the wafer W held by the spin chuck 60, and moves upward to a position where the lower surface of the wafer W held by the spin chuck 60 is processed. It can be moved up and down. The under plate lifting mechanism 175 is arranged below the outer chamber 46, and there is no concern that particles generated from the under plate lifting mechanism 175 will enter the periphery of the wafer.

A peripheral portion (edge) 170 ′ on the upper surface of the under plate 170 is formed so as to be located slightly outside the peripheral edge portion of the wafer W held by the spin chuck 60. That is, the upper surface of the under plate 170 may cover the entire lower surface of the wafer W. Further, as shown in FIG. 6, a slightly concave relief portion 177 is formed on the peripheral edge of the upper surface of the under plate 170. Figure 6
As shown in (b), when the upper surface of the under plate 170 comes close to the lower surface of the wafer W, the support pins 71 are provided with the escape portions 177.
So that it does not come into contact with the under plate 170. Therefore, the gap between the upper surface of the under plate 170 and the lower surface of the wafer W can be made narrower. In addition, the escape portion 177 is formed by the under plate 1
It is formed along the entire peripheral edge of the upper surface 70, and the support pins 71 do not come into contact with the under plate 170 even when the under plate 170 and the wafer W are relatively rotated.

The under plate 170 is, for example, SC
A lower surface supply passage 178 is provided to supply a chemical liquid such as -1, HF, pure water, N 2 gas as a drying gas, etc. to the lower surface of the wafer W as a processing fluid. Lower surface supply path 178
Are provided so as to penetrate through the under plate shaft 171 and the under plate 170. Bottom supply path 1
When the chemical liquid is supplied from 78 and the wafer W is rotated, the chemical liquid can be diffused between the upper surface of the under plate 170 and the lower surface of the wafer W to form a liquid film. In this case, if the peripheral portion 170 ′ of the under plate 170 is formed to be located slightly outside the peripheral edge portion of the wafer W, a liquid film of the chemical liquid is formed to the peripheral portion of the wafer W by the surface tension of the chemical liquid. There is an effect that it is easy to do.

Further, below the under plate 170, there is provided an N 2 gas supply passage 180 for supplying N 2 gas for purging as an inert gas. The N 2 gas supply passage 180 is provided so as to penetrate through the under plate shaft 171. The N 2 gas supply path 180 is provided in the space between the upper surface of the chuck plate 65 and the lower surface of the under plate 170, and in the cavity provided inside the rotary cylinder 67.
Gas is supplied and these spaces are purged by filling with N2 gas. As a result, when the wafer W is rotated, the chuck plate 65 and the under plate 1
The atmosphere between 70 and 70 is prevented from becoming negative pressure, and the particles generated by the rotational driving of the motor 72 pass through the cavity inside the rotary cylinder 67 and between the chuck plate 65 and the under plate 170. You can prevent intrusion.

As shown in FIG. 4, the outer chamber 4
A gas nozzle 1 for purging for supplying an inert gas such as N 2 gas or air into the outer chamber 46 is provided on the upper portion of the nozzle 6.
82 is provided. The purge gas nozzle 182 is
It is arranged at a plurality of positions on the upper portion of the side wall 46a and the ceiling portion 46b, and when the top plate 90 is descending, an inert gas such as N2 gas or a gas such as air is discharged to the upper portion of the top plate 90. , Downflow is formed in the outer chamber 46. Also, the top plate 90
The space between the upper surface and the outer chamber 46 is filled with a gas such as N 2 gas or air and purged. Thereby, for example, the evaporated processing liquid is prevented from flowing from the periphery of the top plate 90 into the upper space. As described above, when the processing liquid is supplied to the wafer W or during the processing of the wafer W, the downflow (purge) gas is supplied from the purging gas nozzle 182, so that the chemical atmosphere in the upper part of the outer chamber 46 is It is possible to prevent the processing liquid atmosphere such as the steam atmosphere from remaining.

The purging gas nozzle 182 uses N 2 as a downflow gas when processing the hydrophobic wafer W.
Supply gas. In this case, there is an effect of preventing a watermark from being generated on the surface of the hydrophobic wafer W.
On the other hand, when processing the hydrophilic wafer W, air may be supplied to reduce the cost of the downflow gas. Further, the purging gas nozzle 182a provided directly above the supply hole 140 of the top plate 90 is arranged so as to pass through the supply hole 140 and project below the top plate 90 when the top plate 90 rises. It is set up. Further, a purge gas nozzle 182b is arranged above the side wall 46a at a position where gas is discharged below the top plate 90 when the top plate 90 rises. Therefore, even when the top plate 90 rises, a downflow is formed in the outer chamber 46 and the space between the lower surface of the top plate 90 and the wafer W is filled with a gas such as an inert gas or air.

As shown in FIG. 4, the outer chamber 4
An inner cup 185 that surrounds the wafer W is provided inside the unit 6. In addition, an outer chamber discharge port 190 that opens below the height of the rotating wafer W, an outer chamber discharge pipe 193 that discharges droplets inside the outer chamber 46, and an inner that discharges droplets inside the inner cup 185. A cup discharge pipe 195 is provided.

The inner cup 185 descends so that the spin chuck 60 projects above the upper end of the inner cup 185 to transfer the wafer W, and rises to surround the wafer W and supply it to both surfaces of the wafer W. It can be moved up and down to a position that prevents liquid and the like from splashing around.

The outer chamber discharge port 190 is opened at the side wall 46a of the outer chamber 46 at two locations around the wafer W, and is a process that flows toward the periphery of the wafer W by the rotation of the wafer W, the chuck plate 65, and the top plate 90. Liquid atmosphere, N2 gas for drying,
The atmosphere of downflow gas, N2 gas for purging, etc. is smoothly discharged. Outer chamber discharge pipe 193
The processing liquid discharged between the side wall 46a of the outer chamber 46 and the outer wall of the inner cup 185 is discharged from the bottom of the outer chamber 46. The inner cup discharge pipe 195 discharges the processing liquid from the inner cup 185.

As shown in FIG. 15, when the wafer W is surrounded by the inner cup 185 (solid line),
The upper sloping portion of the inner cup 185 is close to the sloping portion 46c of the outer chamber 46, and liquid droplets falling from the peripheral edge of the wafer W, the processing liquid atmosphere, the processing fluid, the downflow gas, the N2 gas for purging, etc. Cup 185
Flows downwards inside and is discharged by the inner cup discharge pipe 195. Meanwhile, place the wafer W on the inner cup 18
5, the droplets, the treatment liquid atmosphere, the treatment fluid, the downflow gas, the purge N2 gas, and the like descend outside the inner cup 185 and the outer chamber. It is discharged by the discharge pipe 193. Further, when the wafer W rotates at a high speed, the atmosphere of the processing liquid blown toward the side wall 46a of the outer chamber 46, the processing fluid, the drying N2 gas, the downflow gas, the purging N2 gas, or the like is the outer chamber. The gas is exhausted through the discharge port 190.

The above is the configuration of the substrate cleaning unit 12, but the other substrate cleaning units 13, 14, 15 provided in the cleaning processing system 1 also have the same configuration as the substrate cleaning unit 12, and both sides of the wafer W are cleaned. Can be washed at the same time.

Now, in this cleaning processing system 1,
First, a carrier C, which stores, for example, 25 wafers W each not cleaned yet, is placed on the in / out port 4 by a transfer robot (not shown). And this in
The wafers W are taken out one by one from the carrier C placed on the outport 4 by the taking-out and storing arm 11, and the wafers W are transferred from the taking-out and storing arm 11 to the main wafer transfer device 18. Then, the wafer W is transferred to the substrate cleaning units 12, 13, 14, 15 by the transfer arm 34, for example.
Then, the contaminants such as particles attached to the wafer W are washed and removed. The wafer W which has undergone the predetermined cleaning process is again processed by the main wafer transfer device 1.
Each substrate cleaning unit 12, 13, 14, 15 by 8
Are appropriately carried out from, are delivered to the take-out and storage arm 11, and are again stored in the carrier C.

Here, the cleaning in the substrate cleaning unit 12 will be described as a representative. As shown in FIG. 4, first, the mechanical shutter 53 of the substrate cleaning unit 12 is opened. Then, the transfer arm 34 holding the wafer W enters into the outer chamber 46. At this time, the top plate 9
0 rises in advance and is separated from the position where the wafer W is held by the spin chuck 60. That is, the top plate 90 is supported by the top plate lifting support member 110,
The wafer W is separated from the spin chuck 60, and the wafer W is placed between the lower surface of the top plate 90 and the upper portion of the spin chuck 60.
Sufficient space is formed for the transfer of. Further, the inner cup 185 is lowered so that the upper portion of the spin chuck 60 is projected upward. The under plate 170 descends in advance and is separated from the position where the wafer W is held by the spin chuck 60. A space sufficient to transfer the wafer W is formed between the upper surface of the under plate 170 and the upper portion of the spin chuck 60. The processing fluid supplier 80 is housed in the nozzle storage chamber 77.

The main wafer transfer device 18 includes a transfer arm 34.
Is horizontally moved to transfer the wafer W to the support pins 71. The support pins 71 support the wafer W with the surface of the wafer W on which the semiconductor device is formed as an upper surface. At this time, the top plate 90 and the under plate 170 are separated from the position (height) of the wafer W to be supported, and the top plate 9 and the under plate 170 are separated from each other.
The two engaging convex members 95 at the 0 peripheral edge have moved to positions where they do not contact the transfer arm 34 and the wafer W to be loaded.
Therefore, the transfer arm 34 can transfer the wafer W to the support pins 71 with a margin. Wafer W supporting pin 71
After the transfer, the transfer arm 34 exits from the inside of the outer chamber 46, and after exiting, the mechanical shutter 53 is closed.

Then, the holding member 70 lifts and holds the peripheral edge of the wafer W supported by the support pins 71. Further, the top plate elevating mechanism 100 lowers the top plate 90 to bring it close to the wafer W. At this time, since the engagement concave member 97 has been moved to the engagement position in advance, the engagement convex member 95 can descend from above the engagement position and engage with the engagement concave member 97. A gap of, for example, about 1 mm is formed between the top plate 90 moved to the close position and the upper surface of the held wafer W. When the engaging convex member 95 and the engaging concave member 97 are engaged, the spin chuck 6
0 is rotated slightly and the top plate lifting support member 11
0 and the top plate side engaging portion 113 are disengaged. In this way, after the top plate 90 is transferred to the spin chuck 60, the top plate elevating / lowering support member 110 is lifted by the drive of the top plate elevating / lowering mechanism 100 and separated from the top plate 90.

On the other hand, the under plate 170 is the wafer W.
To a position close to. The under plate 170 moved to the close position and the lower surface of the wafer W held (wafer W
A gap of, for example, about 1 mm is formed between the back surfaces). Further, the inner cup 185 rises and surrounds the wafer W held by the spin chuck 60.

First, the chemical treatment of the wafer W using the SC-1 liquid is performed. By the rotation of the arm 79, the processing fluid supply unit 80 moves from inside the nozzle storage chamber 77 to above the top plate 90. Then, as shown in FIG.
The SC-1 liquid is discharged as the chemical liquid from the processing liquid supply nozzle 151 toward the vicinity of the central portion of the wafer W. The chemical solution is supplied to the vicinity of the central portion of the wafer W through the supply hole 140.
On the other hand, the spin chuck 60, the wafer W held by the spin chuck 60, and the top plate 90 are integrally rotated at a low speed. The chemical liquid supplied to the vicinity of the central portion of the wafer W flows in the outer peripheral direction of the wafer W by the centrifugal force generated by the rotation of the wafer W. In addition, S from the lower surface supply passage 178 is also used as a chemical liquid.
The C-1 liquid is supplied to the wafer W. Top plate 90
Since a narrow gap is formed between the upper surface of the wafer W and the upper surface of the wafer W, and between the lower plate 170 and the lower surface of the wafer W, only the chemical liquid can be interposed therebetween. In this way, a liquid film of the chemical liquid is formed on both surfaces of the wafer W, the chemical liquid supply from the processing fluid supply unit 80 and the lower surface supply passage 178 is stopped, and the wafer W is rotated at a low speed for a predetermined time so that the liquid film is not broken. In this case, the wafer W can be processed with a small amount of chemical solution.

When the chemical solution treatment on both sides of the wafer W is completed, the chemical solution is shaken off from the spin chuck 60, the wafer W, the top plate 90 and the under plate 170 by rotation.
It is discharged into the inner cup 185. When the chemical solution is shaken off after the chemical solution treatment, N2 gas may be supplied from the dry gas supply nozzle 157 and the lower surface supply path 178 to flush and discharge the chemical solution.

Next, the inner cup 185 is lowered,
Rinse processing on both sides of the wafer W is started. The processing liquid supply nozzle 151 discharges pure water toward the supply hole 140, and the pure water supplied from the supply hole 140 to the vicinity of the central portion of the upper surface of the wafer W is caused to flow in the outer peripheral direction of the wafer W by centrifugal force. Pure water is also supplied from the lower surface supply path 178 to perform a rinse process on both surfaces of the wafer W. Since the narrow gaps are formed between the top plate 90 and the wafer W and between the under plate 170 and the wafer W, only pure water can be interposed between these and the wafer W can be made with a small amount of pure water. Can be processed. Also, at the same time as the wafer W rinse processing,
The bottom surface of the top plate 90 and the top surface of the under plate 170 can be washed with pure water. In the rinse process, the spin chuck 60, the wafer W, and the top plate 90 are rotated at a higher speed than in the chemical solution process.

When the rinsing process on both sides of the wafer W is completed,
The discharge of pure water from the processing liquid supply nozzle 151 and the lower surface supply passage 178 is stopped, and the processing fluid supply device 80 is retracted into the nozzle storage chamber 77. And the spin chuck 6
The pure water is shaken off from the spin chuck 60, the wafer W, the top plate 90, and the under plate 170 by the rotation of 0, and is discharged into the outer chamber 46.

Next, the two-fluid mixing nozzle 1 is placed on the upper surface of the wafer W.
Top plate 90 to supply mixed fluid from 55
Then, the spin chuck 60 is removed. First, the wafer W,
The rotation of the spin chuck 60 and the top plate 90 is stopped. Then, each top plate lifting support member 110
Are lowered with respect to the top plate 90, and each top plate side engaging portion 113 and each top plate lifting support member 1
Engage 10. Then, the top plate 90 is lifted together with the top plate lifting support member 110. Further, as the top plate 90 rises, each engaging convex member 9
5 rises and is disengaged from each engagement recess member 97. That is, the top plate 90 is raised and separated from the wafer W. Thus, a sufficient space for moving the two-fluid mixing nozzle 155 is formed between the lower surface of the top plate 90 and the upper portion of the spin chuck 60.

Then, the two-fluid mixing nozzle 155 is moved above the wafer W. Then, as shown in FIG.
While discharging the mixed fluid from the fluid mixing nozzle 155,
The spin chuck 60 and the wafer W are integrally rotated. The two-fluid mixing nozzle 155 moves from at least the center to the periphery of the upper surface of the rotating wafer W. On the other hand, pure water is supplied to the lower surface of the wafer W from the lower surface supply passage 178.

After the treatment using the mixed fluid, a drying treatment using N2 gas for drying is performed. Dry gas supply nozzle 157
The dry gas supply nozzle 157 is moved from at least the center to the peripheral edge of the rotating wafer W while discharging the dry N 2 gas from. On the other hand, the N 2 gas for drying is supplied to the lower surface of the wafer W from the lower surface supply passage 178. During the drying process,
The wafer W is rotated at a higher speed than during the rinse process. In addition,
Before the supply of the N2 gas for drying is started, the N2 gas may be supplied as a purge gas by the purge gas nozzle 182 in advance, and the inside of the outer chamber 46 may be kept in the N2 gas atmosphere. When such drying of purifying pure water from the central portion of the wafer W to the peripheral portion by using the scanning of the N2 gas for drying is performed in the N2 gas atmosphere, it is possible to prevent the generation of the watermark. of course,
The supply of N2 gas from the purging gas nozzle 182 is not limited to during the drying process, and is continuously performed during each process such as the chemical solution process and the rinse process before the drying process, and the N2 gas is constantly lowered in the outer chamber 46. It is preferred to form a flow or purge.

When the drying process is completed, the rotation of the wafer W, the spin chuck 60 and the top plate 90 is stopped, the processing fluid supplier 80 is retracted into the nozzle storage chamber 77, and the under plate 170 is lowered to the retracted position. Then, the wafer W is removed from the substrate cleaning unit 12.
Carry out. The mechanical shutter 53 is opened, and the main wafer transfer device 18 moves the transfer arm 34 into the outer chamber 46 to support the lower surface of the wafer W. On the other hand, the holding of the wafer W by the holding member 70 is released, and the lower surface of the wafer W is supported by the support pins 71. Then, the transfer arm 34 receives the wafer W away from the support pin 71. Thus, the holding of the wafer W on the spin chuck 60 is released. After that, the transfer arm 34 holding the wafer W exits from the inside of the apparatus.

According to the substrate cleaning unit 12, the wafer W and the top plate 9 are moved by the spin chuck 60.
Since 0 is rotated integrally, it is not necessary to install a rotation drive mechanism for rotating the top plate 90 in addition to the motor 72. Therefore, particles generated from the rotary drive mechanism are reduced as compared with the conventional substrate processing apparatus. In addition, the cost required for the rotary drive mechanism can be significantly reduced. Further, since the rotation drive mechanism and the lifting mechanism such as the cylinder are not installed above the holding position of the wafer W, the influence of particles on the wafer W can be suppressed.

Further, when the top plate 90 is lowered, the gap between the wafer W and the top plate 90 can be narrowed and stably formed, so that efficient processing can be performed. Furthermore, the processing fluid feeder 8
A processing fluid such as a chemical solution or a rinse solution is prevented from dropping from 0 to the upper surface of the wafer W. When the top plate 90 is separated from the spin chuck 60, the spin chuck 60 and the wafer W are integrally rotated, and the processing liquid supply nozzles 151 and the two fluids are mixed between the upper surface of the wafer W and the lower surface of the top plate 90. The nozzle 155 can be moved. A method of rotating the top plate 90 together with the wafer W for processing and a method of moving the processing liquid supply nozzle 151 and the two-fluid mixing nozzle 155 above the wafer to supply the processing fluid can be implemented.

Although an example of the preferred embodiment of the present invention has been described above, the present invention is not limited to the embodiment described here. For example, the present invention is not limited to the substrate cleaning apparatus to which the processing liquid is supplied, and the substrate may be subjected to other processing other than cleaning using various other processing liquids.
The substrate is not limited to the semiconductor wafer, and may be other glass for LCD substrate, CD substrate, printed circuit board, ceramic substrate, or the like.

In the present embodiment, the engaging convex member 95
And the case where two engaging recessed members 97 are provided respectively, three or more engaging protruding members 95 and the same number of engaging recessed members 97 as the engaging protruding members 95 are installed at three or more locations. May be engaged. Then, the engagement between the spin chuck 60 and the top plate 90 can be further stabilized, and the integral rotation of the spin chuck 60 and the top plate 90 can be further stabilized.

Top plate 90 and spin chuck 60
The engaging concave portion and the engaging convex portion for engaging and disengaging the
It suffices to provide an engaging concave portion on one of 0 and the spin chuck 60 and an engaging convex portion on the other. For example,
6, the engaging recessed member 201 is provided on the lower surface of the top plate 90, and the engaging protruding member 202 is attached to the plurality of holding members 7.
If each is provided on the upper surface of 0, the gap between the upper surface of the wafer W and the lower surface of the top plate 90 can be formed narrower.

The top plate 90 is attached to the spin chuck 60.
A magnet may be used for the structure for engaging with. For example,
The lower surface of each engaging convex member 95 and the concave portion 9 of each engaging concave member 97
A magnet is provided on the lower surface of 8, so that each engaging convex member 95 can be engaged with each engaging concave member 97 to support the top plate 90. Further, a sensor for detecting that the top plate 90 is engaged with the spin chuck 60 may be provided. For example, a sensor is provided for detecting that the lower surface of each engaging convex member 95 and the lower surface of the concave portion 98 of each engaging concave member 97 are provided, whereby the engaging convex member 95 and each engaging concave member 97 are detected. Engagement can be reliably performed.

The engaging recess member 97 is attached to the chuck plate 65.
By providing a plurality of engaging recessed material groups that engage with the engaging convex members 95 at different heights and selecting one of the engaging recessed material groups that engages with the engaging convex members 95, the top plate The width of the gap formed between the lower surface of 90 and the upper surface of the wafer W may be adjustable to a plurality of heights. For example, at the two peripheral edges of the chuck plate 65, the second engaging member 95 is engaged with each engaging convex member 95 at a position higher than the engaging concave member 97.
An engaging recess material is provided. That is, a first group of engaging recess members made up of two engaging member members 97 and a second group of engaging member members made of two second engaging member members are arranged. The height of the gap when the engaging concave members 97 are engaged with the engaging convex members 95 is, for example, about 1 mm, and the height of the gap when the second engaging concave members are engaged with each other. Is, for example, about 5 mm. That is, when the respective second engaging concave members are engaged with the respective engaging convex members 95, the top plate is more engaged than when the respective engaging concave members 97 are engaged with the respective engaging convex members 95. The width (height) of the gap formed between the lower surface of 90 and the upper surface of the wafer W increases. By making the height of the gap adjustable in this way, for example,
It is possible to perform processing of bringing the lower surface of the top plate 90 into contact with the upper surface of the liquid film formed by the chemical solution supplied to the upper surface of the wafer W, and processing of not contacting the lower surface of the top plate 90 with the upper surface of the liquid film. When high temperature processing is performed, there is a concern that the temperature will drop when in contact with the top plate 90. However, in such processing that is likely to occur, the engaging convex member 95 and the second engaging concave member are engaged and As shown, a gap is formed between the top plate 90 and the liquid film. That is, by forming, for example, an air layer between the top plate 90 and the liquid film, the temperature drop of the liquid film can be prevented. Also,
By bringing the top plate 90 close to the liquid film, there is an effect of preventing evaporation of the chemical liquid.

The top plate 90 is provided with a plurality of engaging convex member groups formed in a columnar shape having a length different from that of the engaging convex member 95, and any engaging convex member to be engaged with each engaging concave member 97 is used. Alternatively, the width of the gap formed between the lower surface of the top plate 90 and the upper surface of the wafer W may be adjusted to a plurality of heights by selecting either of them. For example, a second engaging convex member formed in a columnar shape longer than the engaging convex member 95 is arranged at two locations on the periphery of the top plate 90, and the engaging convex members 95 are engaged with the engaging concave members 97, respectively. In this case, the height of the gap is
For example, the height of the gap is about 1 mm, and the height of the gap when the second engaging convex members are engaged with each other is, for example, about 5 mm. Also in this case, it is possible to perform the process of bringing the lower surface of the top plate 90 into contact with the liquid film formed by the chemical solution supplied to the upper surface of the wafer W, and the process of not bringing the lower surface of the top plate 90 into contact with the liquid film.

Further, the top plate lifting mechanism 100 may be provided with the clamp mechanism 205. The clamp mechanism 205 shown in FIG. 16 includes a protrusion 20 provided on the top plate 90.
6 is gripped and lifted by the top plate lift mechanism 100. Further, when the top plate 90 is engaged with the spin chuck 60, the top plate 90
The clamp mechanism 205 is gripped and released from the convex portion 206 provided on the. In addition, a cylindrical wall surface that surrounds the periphery of the supply port 140 and is perpendicular to the upper surface of the top plate 90 is formed, and this cylindrical portion is formed as a convex portion 206, and the clamp mechanism 205 is brought into contact with the outer wall of the cylindrical portion to form a convex portion. It may be configured to hold the portion 206.

The treatment liquid supply nozzle 151 may be provided in an inclined state with respect to the top plate 90. in this case,
The lowest point of the tip of the processing liquid supply nozzle 151 is the tapered portion 14.
2 is stopped so that the processing liquid is obliquely ejected, so that the processing liquid is passed through the supply hole 140 and supplied to the central portion of the wafer W. Then, after stopping the supply of the chemical liquid or the rinse liquid, the processing liquid supply nozzle 151 is connected to the supply hole 14
Even if the processing liquid remaining inside the processing liquid supply nozzle 151 drops from the lowest point before moving from above 0, it is possible to receive the dropped liquid droplets in the tapered portion 142 around the supply hole 140.

Further, the processing liquid supply nozzle 151 may be adapted to supply hydrofluoric acid (HF), and the processing liquid to be discharged may be switched to either SC-1, pure water or HF by a switching means (not shown). good. Hereinafter, the cleaning process of the wafer W using SC-1 liquid as the first chemical liquid and HF as the second chemical liquid will be described.

First, the wafer W is processed using the SC-1 solution. As shown in FIG. 13, the top plate 90 and the under plate 170 are brought close to both sides of the wafer W,
The SC-1 liquid is supplied from the processing liquid supply nozzle 151 to the supply hole 140 to form the SC-1 liquid film on both surfaces of the wafer W.
The wafer W is rotated at a low speed for a predetermined time. S on both sides of wafer W
When the C-1 process is completed, the spin chuck 6 is rotated by rotation.
0, the wafer W, the top plate 90, the SC-1 from the under plate 170, the inner cup 185
Discharge inside. Next, the inner cup 185 is lowered to perform a rinse process on both surfaces of the wafer W using pure water supplied from the processing liquid supply nozzle 151 to the supply hole 140. Then, the spin chuck 6 is rotated to rotate the spin chuck 6
Pure water is shaken off from 0, the wafer W, the top plate 90, and the under plate 170, and is discharged into the outer chamber 46. After that, the rotation of the wafer W, the spin chuck 60, and the top plate 90 is stopped, and as shown in FIG. 14, the top plate 90 is lifted and separated from the spin chuck 60. Then, the two-fluid mixing nozzle 155
The mixed fluid is supplied to the upper surface of the wafer W rotating from the above to process. The mixed fluid used for processing the wafer W is discharged into the outer chamber 46.

After that, a process using HF is performed. First,
As shown in FIG. 13, the wafer W and the spin chuck 60 are
Is stopped, the top plate 90 is lowered, and is engaged with the spin chuck 60 while being close to the wafer W. Next, the top plate lifting support member 110 is separated from the top plate 90 and retracted. On the other hand, the under plate 170 is close to the wafer W. Then, the processing fluid supply device 80 moves from the inside of the nozzle storage chamber 77 to above the top plate 90, and HF is discharged as a chemical liquid from the processing liquid supply nozzle 151. The HF passes through the supply hole 140 and is supplied to the vicinity of the central portion of the wafer W. Meanwhile, the spin chuck 60, the wafer W held by the spin chuck 60, and the top plate 90 are integrally rotated.
The HF supplied near the center of the wafer W flows in the outer peripheral direction of the wafer W due to the centrifugal force generated by the rotation of the wafer W. Also,
HF is also supplied as a chemical liquid from the lower surface supply passage 178 to form an HF liquid film on both surfaces of the wafer W. Then, the HF supply from the processing fluid supplier 80 and the lower surface supply passage 178 is stopped, and the wafer W is rotated at a low speed for a predetermined time such that the liquid film is not broken. After that, the spin chuck 60, the wafer W, the top plate 90,
HF is shaken off from the under plate 170 and discharged into the outer chamber 46.

Next, a rinsing process is performed on both surfaces of the wafer W using pure water supplied from the processing liquid supply nozzle 151 to the supply hole 140. Then, the spin chuck 60, the wafer W, the top plate 90 are rotated by integrally rotating the spin chuck 60, the wafer W, and the top plate 90 at a high speed.
Shake off pure water from the under plate 170. That is, the wafer W is dried by rotating it at a high speed. After that, the top plate 90 is raised and the spin chuck 6
The under plate 170 is moved down from 0, and the under plate 170 is lowered. Then, the wafer W is unloaded from the substrate cleaning unit 12.

A liquid film of a chemical liquid such as SC-1 or HF is formed on the wafer W.
At the time of formation, the entire wafer W is wrapped in the chemical solution between the top plate 90 and the under plate 170. That is, the chemical liquid supplied to both sides of the wafer W is made to wrap around to the side surface (outer peripheral surface) of the wafer W, and as shown in FIG. In this case, the side surface of the wafer W can be processed with the chemical solution, and the processing quality can be further improved. In addition, the surface 91 formed on the lower surface of the top plate 90
Edge portion 91 ′ of the wafer W is located slightly outside the peripheral edge portion of the upper surface of the wafer W, and the peripheral edge portion 17 of the upper surface of the under plate 170 is
When 0 ′ is formed so as to be located slightly outside the lower surface peripheral portion of the wafer W, the peripheral portion 91 ′ and the peripheral portion 17 are formed.
Since the liquid film of the chemical liquid can be formed between 0 and 0 ′, there is an effect that the liquid film can be easily formed so as to surround the peripheral portion of the wafer W.
Further, even after the liquid film is formed, the processing fluid supplier 80 and the lower surface supply passage 1
The chemical solution may be supplied from 78 and the chemical solution may be processed while forming a liquid film that flows from the center to the outer periphery on both surfaces of the wafer W.

The liquid film of the chemical liquid such as SC-1 and HF on the upper surface of the wafer W can be formed with the top plate 90 separated from the upper surface of the wafer W. For example, the processing fluid supply unit 80 is moved above the wafer W in a state where the top plate 90 is separated from the upper surface of the wafer W. And
By gently rotating the wafer W integrally with the spin chuck 60 and moving the processing liquid supply nozzle 151 from at least the center to the peripheral edge of the wafer W, SC-1 ejected from the processing liquid supply nozzle 151 is entirely over the upper surface of the wafer W. Supply to. After the SC-1 liquid film is formed on the upper surface of the wafer W in this manner, the processing fluid supply unit 80 is retracted from above the wafer W, and the top plate 90 is lowered. Then, by bringing the lower surface of the top plate 90 into contact with the liquid film, SC- is formed between the top plate 90 and the upper surface of the wafer W.
Only one can be interposed. Further, the lower surface of the top plate 90 may be brought into close proximity with the upper surface of the liquid film by forming a gap as shown in FIG. At that time, the top plate 90 has an effect of preventing the evaporation of the chemical liquid.

The rinsing process and the drying process can also be performed with the top plate 90 separated from the upper surface of the wafer W. For example, while rotating the wafer W integrally with the spin chuck 60, the two-fluid mixing nozzle 155 may rotate the wafer W.
Of at least the center of the wafer W to supply the pure water or N2 gas for drying to the entire upper surface of the wafer W.

[0110]

According to the substrate processing apparatus and the substrate processing method of the present invention, a method of engaging the upper surface member with the spin chuck and rotating the upper surface member integrally with the spin chuck and the substrate for processing, and the upper surface member Can be removed from the spin chuck, and the processing fluid supply nozzle can be moved between the upper surface member and the substrate to supply the processing fluid.

[Brief description of drawings]

FIG. 1 is a plan view of a cleaning processing system.

FIG. 2 is a side view of the cleaning processing system.

FIG. 3 is a plan view of the substrate cleaning unit according to the embodiment of the present invention.

FIG. 4 is a vertical sectional view of a substrate cleaning unit.

FIG. 5 is a vertical cross-sectional view of a substrate cleaning unit illustrating the configuration around the spin chuck.

FIG. 6 is an explanatory diagram illustrating operations of a holding member and a support pin.

FIG. 7 is a plan view of a top plate.

FIG. 8 is an elevational view of the top plate.

FIG. 9 is an explanatory view for explaining the engagement between the engaging convex member and the engaging concave member.

FIG. 10 is a vertical cross-sectional view of the substrate cleaning unit for explaining the lifting and lowering of the top plate.

FIG. 11 is an explanatory view for explaining the engagement between the top plate lifting support member and the top plate side engaging portion.

FIG. 12 is an explanatory diagram illustrating configurations of a processing liquid supply nozzle, a two-fluid mixing nozzle, and a drying gas supply nozzle.

FIG. 13 is an explanatory diagram illustrating a state in which a top plate is brought close to a wafer and a processing fluid is supplied from a supply port.

FIG. 14 is an explanatory diagram illustrating a state in which the top plate is separated from the wafer and the processing fluid is supplied while moving the two-fluid mixing nozzle.

FIG. 15 is an explanatory diagram for explaining the lifting and lowering of the inner cup and the flow of drainage or exhaust.

FIG. 16 is an explanatory diagram illustrating a clamp mechanism provided in a top plate lifting mechanism according to another embodiment, and an engaging concave portion and an engaging convex portion.

FIG. 17 is an explanatory diagram illustrating a processing method for forming a gap between a top plate and a liquid film.

[Explanation of symbols]

C carrier W wafer 1 Cleaning system 12 Substrate cleaning unit 46 Outer chamber 60 Processing fluid feeder 70 Spin chuck 79 arms 90 top plate 97 Top plate lifting mechanism 95 Engaging convex member 97 Engagement recess material 110 Top plate lifting support member 113 Top plate side engaging part 151 Treatment liquid supply nozzle 155 2-fluid mixing nozzle 170 Under plate

Claims (18)

[Claims] 1. A substrate processing apparatus for supplying a processing fluid to a substrate for processing, comprising: a spin chuck for holding the substrate;
An upper surface member that is close to the substrate and covers the upper surface is provided, the upper surface member is detachable from the spin chuck, and the upper surface member is engaged with the spin chuck to integrally form the upper surface member and the spin chuck. A substrate processing apparatus characterized in that the substrate processing apparatus is configured to rotate. 2. The upper surface member is movable up and down with respect to the spin chuck, and one of the upper surface member and the spin chuck is provided with an engaging concave portion and the other is provided with an engaging convex portion, and the upper surface member is the spin member. When the engaging concave portion and the engaging convex portion are engaged with each other when descending with respect to the chuck, and the engaging concave portion and the engaging convex portion are separated when ascending,
The substrate processing apparatus according to claim 1, wherein the engagement concave portion and / or the engagement convex portion is provided with a taper portion for facilitating insertion of the engagement convex portion. 3. An upper surface member elevating mechanism for lowering and elevating the upper surface member to a position where it is engaged with the spin chuck and a position where it is raised to a position where it is disengaged from the spin chuck. Or the substrate processing apparatus according to 2. 4. The upper surface member elevating mechanism includes a support member that supports the upper surface member separated from the spin chuck, and the upper surface member is provided with an engaging portion that is detachable from the support member. The substrate processing apparatus according to claim 3, wherein the engagement portion and the support member are engaged and disengaged while the upper surface member is engaged with the spin chuck. 5. The substrate processing apparatus according to claim 4, wherein engagement and disengagement of the engagement portion and the support member is performed by integrally rotating the upper surface member and the spin chuck. . 6. The substrate processing apparatus according to claim 3, wherein the upper surface member elevating mechanism includes a clamp mechanism that holds the upper surface member. 7. The substrate processing apparatus according to claim 1, wherein a supply hole for allowing a processing fluid to be supplied to the substrate to pass through is provided at the center of the upper surface member. . 8. A processing fluid supply nozzle for discharging a processing fluid to be supplied to a substrate is provided, and one or more processing fluid supply nozzles are provided, and an arm for moving the processing fluid supply nozzle above at least the center of the substrate to the peripheral edge is provided. The substrate processing apparatus according to claim 1, 2, 3, 4, 5, 6 or 7. 9. The substrate processing apparatus according to claim 8, further comprising at least one processing fluid supply nozzle which mixes a processing liquid with a gas and discharges the gas onto the substrate. 10. The arm moves the processing fluid supply nozzle above the substrate in a state where the upper surface member is separated from the spin chuck. Substrate processing equipment. 11. A chamber surrounding the substrate, the spin chuck, and the upper surface member, and a processing fluid supply nozzle storage unit for sealingly storing the processing fluid supply nozzle, the processing fluid supply nozzle supplying the processing fluid supply nozzle. The substrate processing apparatus according to claim 8, 9 or 10, characterized in that an opening capable of opening and closing is provided for moving the nozzle storage portion into the chamber. 12. The substrate processing according to claim 1, further comprising a lower surface member which is relatively raised and approached with respect to the back surface of the substrate, and is lowered and separated from each other. apparatus. 13. A substrate processing method for supplying a processing fluid to a substrate for processing, wherein the substrate is held by a spin chuck in a state where the upper surface member is raised, and the upper surface member is lowered to remove the surface of the substrate. In a state of being engaged with the spin chuck, supplying a processing fluid to a gap formed between the upper surface member and the substrate, and rotating the substrate, the spin chuck and the upper surface member integrally. Processing the substrate, stopping the rotation of the substrate, the spin chuck, and the upper surface member, processing the substrate by rotating the substrate and the spin chuck integrally while raising the upper surface member and separating it from the spin chuck. Then, the rotation of the substrate and the spin chuck is stopped, and the holding of the spin chuck on the substrate is released. 14. After stopping the rotation of the substrate and the spin chuck, the upper surface member is lowered again to be brought close to the surface of the substrate and brought into a state of being engaged with the spin chuck. A processing fluid is supplied to a gap formed between the substrate, the spin chuck, and the upper surface member to rotate the substrate integrally to process the substrate, and the rotation of the substrate, the spin chuck, and the upper surface member is stopped. 14. The substrate processing method according to claim 13, wherein the upper surface member is lifted to be separated from the spin chuck, and the holding of the spin chuck on the substrate is released. 15. The upper surface member is brought into contact with the processing fluid supplied to the surface of the substrate when the processing fluid is supplied to the gap formed between the upper surface member and the substrate. Item 13. The substrate processing method according to Item 13 or 14. 16. The upper surface member is not brought into contact with the processing fluid supplied to the surface of the substrate when the processing fluid is supplied to the gap formed between the upper surface member and the substrate. Item 13. The substrate processing method according to Item 13 or 14. 17. When processing the substrate by integrally rotating the substrate and the spin chuck in a state where the upper surface member is lifted and separated from the spin chuck, a processing is performed between the upper surface member and the substrate. The fluid supply nozzle is moved from at least the center to the peripheral edge of the substrate to supply the processing fluid to the rotating substrate from the processing fluid supply nozzle.
5. The substrate processing method according to 5 or 16. 18. When processing the substrate, further comprising:
Characterized in that the lower surface member is raised to be close to the back surface of the substrate, and a processing fluid is supplied to a gap formed between the lower surface member and the substrate to process the back surface of the substrate.
The substrate processing method according to claim 13, 14, 15, 16 or 17.