JP7008928B1 - Substrate cleaning vacuum drying equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To shorten the cleaning time by cleaning the substrate 11 in one processing chamber 2 while maintaining the cleanliness with a device capable of cleaning and vacuum drying, and to shorten the drying time by clean vacuum drying without residual cleaning liquid. The purpose is to obtain a substrate cleaning vacuum drying device that can be used efficiently without contamination. SOLUTION: When a substrate 11 in a processing chamber 2 is filled with nitrogen gas or the like from a gas nozzle 28 in a conical shape, cleanliness is maintained and the time of the cleaning step is shortened. Further, the shape of the inner 48 of the processing chamber cover 4 is a cone, and the cleaning liquid that is inclined by tilting the center 54 of the base to a medium height is inclined and flows into the drainage groove 53, and the drainage groove 53 is also inclined and flows into the drainage port 15. The vacuum exhaust port 23, which facilitates the flow of gas from the substrate 11, is located higher than the substrate 11, and if the vacuum exhaust port 23 is provided inside 48 of the processing chamber cover 4, the drying time is shortened. It constitutes a substrate cleaning vacuum drying device that can efficiently shorten the cleaning and vacuum drying time without contamination. [Selection diagram] Fig. 1

Description

The present invention relates to a substrate cleaning vacuum drying apparatus for cleaning and drying precision substrates such as semiconductor substrates.

Conventionally, as a device for rotating and cleaning semiconductor substrates one by one and vacuum-drying them as described in Patent Document 1, FIG. 1 (hereinafter, reference numerals and reference numerals in the description in the conventional example are the contents described in Patent Document 1. ) And the cleaning device 1 shown in FIG. Both FIGS. 1 and 4 of these cleaning devices 1 perform cleaning treatment and drying treatment in one processing chamber surrounded by a container. The device is provided with an exhaust port on the upper part of the container, which discharges the steam generated from the cleaning liquid or the N2 atmosphere for replacement through the switching valve on the upper part of the container. Then, the switching valve is opened to introduce N2 into the processing chamber provided with the N2 supply port inside the cover under the processing chamber in the sealed container by shutting off the outside air, and then the table is replaced with the N2 atmosphere. The semiconductor substrate supported by the is rotated and cleaned with a high-frequency liquid injector. After that, the cover is lowered without moving the semiconductor substrate, and the table and the semiconductor substrate are closed with an airtight seal at the lower end of the cover to create a sealed space, and then a supply port is provided at the bottom of the processing chamber via a switching valve. The semiconductor substrate was vacuum-dried by reducing the pressure with a vacuum pump.

However, regarding the conventional cleaning and vacuum drying of Patent Document 1, in both the cleaning apparatus 1 shown in FIGS. 1 and 4, the inside of the container is shut off from the outside air and the cleaning treatment and the drying treatment are performed in a closed room. Then, after the completion, the semiconductor substrate is carried out by the transfer robot waiting from the opening / closing door for taking in and out the semiconductor board mounted on the table, and then the semiconductor board to be cleaned is carried in. Then, since the outside air enters the container, the semiconductor substrate is washed after the gas in the container is discharged from the switching valve and replaced with the N2 atmosphere while the opening / closing door is closed and N2 is continuously introduced through the switching valve. Since it takes time to introduce N2 before and replace it with the N2 atmosphere, there is a problem that a waiting time for washing is required and the time of the washing step becomes long. Further, there is a problem that the cleaning liquid remains on the flat floor surface and the drainage groove during vacuum drying, and the drying time becomes long. Further, the vacuum exhaust port is on the floor surface and below the semiconductor substrate, and the inside of the pattern groove of the semiconductor substrate is indirect suction, which is inefficient and prolongs the drying time. With high aspect ratio (pattern depth / pattern width) due to miniaturization in some memories, for example, flash memory (nonvolatile memory) has an aspect ratio of more than 10 times and the depth of the pattern groove is deeper than other memories. It becomes difficult to suck efficiently without causing the pattern to collapse. In the drying, spin drying (rotational drying) using IPA (isopropyl alcohol) as a rinsing liquid is the mainstream. In addition, since the cover inside the container is moved up and down in the direction perpendicular to the table by the air cylinder and the operating mechanism, metal etc. may be contaminated inside the container due to the sliding friction of the moving part and the operating mechanism part of the air cylinder that moves up and down the cover. There is a problem that the particle invades the processing chamber and adheres to the semiconductor substrate.

Japanese Patent No. 4902091

In view of the above-mentioned conventional drawbacks, in the present invention, the metal rotating shaft conventionally attached via a flange (with an O-ring) whose central portion is sealed on a flat surface recessed from the peripheral portion is a processing chamber. The table exposed inside, its moving parts, and the bolts that tighten the flange (with O-ring) are made of chemical-compatible resin. Therefore, a rotating shaft 4 with a flange (with an O-ring) is fixed to the center of the lower surface of the table from above the inside of the processing chamber. The flange (with O-ring) can prevent leakage of cleaning liquid and vacuum, but the rotating shaft 4 is fixed via the flange (with O-ring), and the tightening bolt is tightened with a resin bolt that is not affected by the cleaning liquid containing the chemical solution. Since the drive motor is attached to the rotating shaft, there is vibration, and resin bolts may loosen, which is insufficient in terms of strength. Therefore, if the flange A attached to the rotating portion main body is installed under the processing chamber base with a metal mounting bolt at the lower part of the processing chamber base, the strength is reinforced and loosening does not occur.

Further, although the conventional semiconductor substrate is washed in the processing chamber, it is washed in an N2 atmosphere including the connected container. And drying is done in the processing room. Since the container has a large volume , there is a problem that it takes time to replace it with an N2 atmosphere before cleaning. Therefore, in the processing chamber 2, the partition wall 8 is joined to the processing chamber base 3, the partition wall lid 9 is fixed to the partition wall 8, and the processing chamber is surrounded by the processing chamber cover 4 which moves up and down with a gap between the processing chamber lid 9 and the partition wall lid 9. Cleaning after replacing the inside of the chamber 2 with nitrogen gas has a small volume, so the waiting time for replacement with nitrogen gas before cleaning is shortened. Therefore, it is an object of the present invention to provide a substrate cleaning vacuum drying apparatus capable of eliminating the waiting time before cleaning by cleaning the substrate 11 while comprehensively injecting nitrogen gas onto the substrate 11 so as to hit the entire surface of the substrate 11. ..

In addition, a conventional semiconductor substrate is opened and closed in a container at the entrance and exit, and a sealable and expensive square vacuum gate valve for the substrate is installed in the door. Therefore, a substrate entrance / exit 41 through which the substrate 11 passes is provided, and the opening / closing door 42 and the upper / lower cylinder 43 of the door that moves it up and down are used to clean the substrate with a simple structure that leaks from the gap between the opening / closing door 42 due to the pressure of nitrogen gas in the processing chamber 2. It is intended to provide a vacuum drying device.

Further, in the conventional vacuum drying, the semiconductor substrate is vacuum dried in a place where the cover of the processing chamber is lowered and cleaned in the container. Therefore, in vacuum drying, the processing chamber cover 4 is lowered in the processing chamber 2 surrounded by the processing chamber cover 4, the partition wall 8 and the partition wall lid 9 at the washed place, and the processing chamber base 3 side is mounted on the processing chamber base O. The substrate 11 is vacuum-dried in the vacuum chamber 50 formed by the ring 18 being squeezed. It is an object of the present invention to provide a substrate cleaning vacuum drying apparatus capable of performing cleaning and vacuum drying by reducing the volume surrounded by one of the processing chambers 2.

Furthermore, since the floor surface of the treatment chamber inside the conventional container is flat, the cleaning liquid does not easily flow into the drainage ditch, and once it is collected in the drainage ditch, the switching valve is opened and the cleaning liquid is discharged, so it stands by. In addition, vacuum drying with the cleaning liquid remaining also increases the time required for the drying process. Therefore, the volume of the vacuum chamber 50 is reduced by setting the center 54 of the base 3 of the processing chamber base 3 in the processing chamber 2 to a medium height, and the cleaning liquid scattered due to the inclination of the medium height is quickly drained to the drainage groove 53 and the drainage port. It is an object of the present invention to provide a substrate cleaning vacuum drying apparatus capable of shortening the time of the drying step of the substrate 11 by discharging the substrate 11 to eliminate the residual cleaning liquid.

Furthermore, in the past, the aspect ratio (pattern depth / pattern width) of a general memory pattern of a semiconductor substrate that was vacuum-dried was three to four times, but in recent years flash memory (nonvolatile memory) has become finer. The high aspect ratio (pattern depth / pattern width) exceeds 10 times and further evolves, and the groove becomes deeper. Therefore, in order to dry the pattern so that it does not fall over, the function of the dried part is improved and a rinse liquid with a surface tension that matches the pattern is used. Therefore, there is a problem that the conventional vacuum exhaust port is located at a lower position than the semiconductor substrate and is located on the floor surface, and the gas collides with the side surface and is refracted to flow to generate resistance, resulting in poor exhaust efficiency. Therefore, in order to convert the rinse liquid into steam and gas and efficiently suck it from the initial stage, it is an object of the present invention to provide a substrate cleaning vacuum drying device provided so as to flow directly to the vacuum exhaust port 23 at a position higher than the substrate 11. There is.

In order to achieve the above object, the invention of claim 1 of the substrate cleaning vacuum drying apparatus of the present invention
Outside the processing chamber 2, a metal rotating part main body 10 is attached from the lower side of the processing chamber base 3 via a flange A51 of a resin for chemicals such as fluororesin or vinyl chloride resin, and the processing chamber base 3 is attached from the flange A51. A metal mounting bolt 52 is attached to the lower side to reinforce the strength of the mounting bolt 52 and prevent corrosion, and the partition 8 is joined to the processing chamber base 3 in the processing chamber 2 so that the partition lid 9 is a partition. In the processing chamber 2 surrounded by the processing chamber cover 4 fixed to 8 and moving with a gap between the partition wall lid 9, nitrogen gas hits the entire surface of the substrate 11 from the concave inner side 48 of the processing chamber cover 4. As described above, the gas nozzle 28 is used to inject the gas, the partition 8 is provided with the substrate inlet / outlet 41, and the opening / closing tobira 42 is opened / closed by the upper and lower cylinders 43 of the tobira. The processing chamber cover 4 is lowered to the O-ring 18 for the processing chamber base mounted on the processing chamber base 3 side after the substrate 11 gripped by the shaft 14 is rotationally cleaned by the nozzle 37 attached to the swirling shaft 38 that swings. A means for depressurizing the vacuum chamber 50 by the vacuum pump 26 via the vacuum switching valve 24 in the closed vacuum chamber 50 is also provided in the processing chamber 2.

Further, in the invention of claim 2 of the substrate cleaning vacuum drying apparatus of the present invention, the shape of the inner 48 of the processing chamber cover 4 made of the resin of the processing chamber 2 is made into a cone or a sphere, and the shape is made into a cone or a sphere from the center to the inner circumference. When lowered, the wall thickness of the inner peripheral portion of the inner 48 is increased to suppress the dent in the central portion by vacuum pressure, and the volume is reduced. The volume of the vacuum chamber 50 is further reduced, and the cleaning liquid scattered at the middle and high inclinations of the base center 54 quickly flows into the drainage groove 53 and is quickly discharged to the drainage port 15, so that the cleaning liquid does not remain on the substrate. It is characterized by providing a means for drying the eleven.

Further, in the invention of claim 3 of the substrate cleaning vacuum drying apparatus of the present invention, in order to vacuum dry the inside of the vacuum chamber 50, the liquid in the deep pattern groove of the substrate 11 is vaporized from the steam, so that the vacuum is efficiently vacuumed from the initial stage. In order to suck into the exhaust port 23, the flow of steam and gas is made to flow toward the upper part of the substrate 11, and the vacuum exhaust port 23 is located higher than the substrate 11 and the vacuum exhaust port 23 is provided inside 48 of the processing chamber cover 4. It is characterized by being provided.

As is clear from the above explanation, in the present invention, the effect of row fisting can be obtained next.
In the invention of claim 1, washing and vacuum drying are performed in the processing chamber 2 of FIGS. 1, 2, and 3. A metal rotating portion main body 10 is attached from the lower side of the processing chamber base 3 via a flange A51 of a resin for dealing with chemicals. Since the flange A51 is configured by a metal mounting bolt 52 on the lower side of the processing chamber base 3, it is configured to be able to reinforce looseness and strength and prevent corrosion.
Further, when nitrogen gas is injected in a conical shape from the concave inner 48 gas nozzle 28 of the processing chamber cover 4, the cleaning nozzle 37 directly hits the entire surface of the substrate 11 and the upper surface of the substrate 11 is surrounded by the nitrogen gas . Although the substrate 11 is cleaned, the upper surface of the substrate 11 is cleaned while the processing chamber 2 having a small volume of nitrogen gas is replaced from the middle of the cleaning. It is possible to prevent the adhesion of the natural oxide film. Further, since the inside of the processing chamber 2 is configured to be cleaned without waiting for being replaced with nitrogen gas , the time of the cleaning step can be shortened.
Further, the partition wall 8 is provided with a substrate inlet / outlet 41, and a guide groove for opening / closing the resin plate opening / closing cylinder 42 and one air slide table upper / lower cylinder 43 is provided in the partition wall 8 so that the substrate inlet / outlet 41 can be opened and closed. Because it is cheap, it can be done.
In addition, in the past, the treatment chamber was surrounded by a tightly closed container, but in this method, the treatment chamber has a smaller volume and can be washed and vacuum dried, so the placement area can be reduced and further. Vacuum drying is such that it can be dried with pure water without using IPA (isopropyl alcohol) as the rinsing liquid, so it is possible to regulate the emission of volatile organic compounds (VOC).

In the invention of claim 2, the shape of the inner 48 of the processing chamber cover 4 of FIGS. The pressure resistance due to the vacuum pressure suppresses the dent in the central part and the volume becomes smaller, and the volume of the vacuum chamber 50 becomes smaller because the base center 54 of the processing chamber base 3 is made medium and high. The splattered cleaning liquid quickly flows toward the drainage groove 53, and the drainage groove 53 can be quickly discharged by tilting toward the drainage port 15, so that the splattered cleaning liquid is configured to have no residue. The drying time can be shortened.

In the invention of claim 3, in order to vacuum dry the substrate 11 in the vacuum chamber 50 of FIGS. 1 and 3, the vacuum exhaust port 23 is set higher than the substrate 11 and flows without obstacles by utilizing the vacuum function. Since the vacuum exhaust port 23 is arranged inside 48 of the processing chamber cover 4 so as to efficiently suck the inside of the pattern groove of the substrate 11 without dew condensation, the drying time can be shortened.

It is sectional drawing of the front of the substrate cleaning vacuum drying apparatus of the best 1st embodiment for carrying out this invention. It is a partial cross-sectional view of the right side surface of the substrate washing vacuum drying apparatus of the best 2nd embodiment for carrying out this invention. It is sectional drawing at the time of forming the vacuum chamber of the substrate cleaning vacuum drying apparatus of the best 4th embodiment for carrying out this invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(Example 1)
In Example 1 of the substrate cleaning vacuum drying apparatus of the present invention, FIGS. 1, 2, and 3 are cross-sectional views of a vacuum chamber, and cleaning and vacuum drying are performed in the processing chamber 2 of the apparatus. This device is a metal mounting bolt with a tensile strength of about 500 MPa and a mounting bolt 52 that is five times stronger than a resin bolt. By tightening with the metal mounting bolt 52, normal operation can be performed without loosening. The flange A51 can prevent cleaning liquid leakage and vacuum leakage by the rotating O-ring 19. Further, at the time of maintenance of the rotating portion main body 10, the rotating portion main body 10 can be removed without disassembling the slide shaft 6 attached to the arm 5 that raises and lowers the processing chamber cover 4, the lot 56 of the cylinder 39, and the like. Since the maintenance lid 47 is removed and the mounting parts of the board gripping shaft 14 are removed and then the mounting bolt 52 on the lower side of the processing chamber base 3 is removed, contamination inside the processing chamber 2 is suppressed and maintenance is easy.

Further, the partition 8 is joined to the processing chamber base 3, and the partition lid 9 is fixed to the partition 8 and is surrounded by the processing chamber cover 4 which moves with a gap between the partition lid 9 and the partition lid 9. When a gas nozzle 28 mounted in the center of the inner 48 of the substrate is used to inject a filled cone, the nitrogen gas directly hits the entire surface of the substrate 11, and the upper surface of the substrate 11 is surrounded by the nitrogen gas . The cleaning nozzle 37 (described in Patent No. 5610360 and Patent No. 4368351) is ultrasonically cleaned at room temperature, and the cleaning angle is automatically changed according to the situation of the substrate 11 to perform cleaning. Can be cleaned by removing the adhesion of gas. Then, the substrate 11 is carried into the processing chamber 2 by providing a substrate inlet / outlet 41, opening the opening / closing door 42 along the guide groove of the partition wall 8 with the door upper / lower cylinder 43, inserting the substrate 11 into the board gripping shaft 14, and then opening / closing the door 42. When the gas nozzle 28 injects the gas into the substrate 11 in a conical shape after the gas is closed by the upper and lower cylinders 43 of the door, the nitrogen gas directly hits the entire surface of the substrate 11 and the upper surface of the substrate 11 is surrounded by the nitrogen gas , and the substrate 11 is rotated. The drive motor 20 installed in the enabled rotating part main body 10 is operated, and then the swivel shaft 38 is moved by the drive motor (not shown) to move the cleaning nozzle 37 from the origin position to the standby position, and then the cup cylinder. After moving the cup 12 from the bottom to the top in 13, the cleaning liquid is sprayed from the cleaning nozzle 37 to perform cleaning from the standby position toward the center of the substrate 11, and the cleaning is performed from the center to the folded standby position. If there is no next cleaning, the cleaning process is completed when the swivel shaft 38 is moved to the origin position by the drive motor (not shown).

After that, the cylinder 39 with screws on the head side, the slide shaft 6, and the arm 5 are moved so that the processing chamber cover 4 moves laterally and moves up and down vertically without contaminating the inside of the processing chamber 2 with dust rubbed against the partition wall lid 9. When the processing chamber cover 4 connected to the connection lot 49 is lowered to the tip position where the L-shaped arm 5 attached to the center is directed toward the center, the processing chamber base O-ring 18 is attached to the processing chamber base 3 side. Since the O-ring 18 for use is on the lower side, it does not float and is more closely attached, and is ready for vacuum drying in the vacuum chamber 50. To vacuum dry the substrate 11 in the vacuum chamber 50, select non-rotational vacuum drying or rotary vacuum drying of the substrate 11 and then energize the solenoid valve B25. Nitrogen gas is emitted from the gas nozzle 28 until the vacuum switching valve 24 opens. Is sprayed. The vacuum switching valve 24 is opened by the energization, the pressure is reduced by the vacuum pump 26, the substrate 11 is vacuum dried without using IPA (isopropyl alcohol), and the rinse liquid is pure water. The vacuum drying performed can be performed. Then, when the pattern becomes finer and has a high aspect ratio, cleaning is performed using a rinse solution having a low surface tension that matches the pattern.

Further, the partition wall lid 9 is attached to the partition wall 8, and the inner diameter of the partition wall lid 9 is shaped to fit the processing chamber cover 4 to maintain a gap. The gap is formed in the processing chamber 2 by injection from a gas nozzle 28. 2 When the inside of 2 rises above the atmospheric pressure, it is naturally released from the gap. Further, it is naturally discharged from the gap of the opening / closing door 42 of the substrate entrance / exit 41. Then, the gas in the processing chamber 2 is replaced by opening the exhaust solenoid valve 34 from the exhaust port 33 via the solenoid valve D35 and forcibly discharging the gas by the exhaust fan 36 as needed. In addition, cleaning and vacuum drying can be performed in the processing chamber 2.

(Example 2)
Further, as shown in FIGS. 2 and 3, in order to further shorten the drying time in the vacuum chamber 50, the shape of the inner 48 of the processing chamber cover 4 made of resin is made conical and is directed from the center to the inner circumference. When lowered, the wall thickness of the inner peripheral portion of the inner 48 becomes thicker, and the pressure resistance due to the vacuum eliminates the dent in the central portion and reduces the volume. Further, the volume of the vacuum chamber 50 is further reduced by setting the base center 54 of the processing chamber base 3 to a medium height. The cleaning liquid scattered on the inclined portion due to the middle height of the base center 54 quickly flows into the drainage groove 53 and is inclined from the drainage groove 53 toward the drainage port 15, so that the drainage liquid can be discharged more quickly. It is possible to shorten the drying time of the substrate 11 because it is discharged to the mouth 15 and the cleaning liquid does not remain.

(Example 3)
Further, as shown in FIGS. 1 and 3, when the vacuum chamber 50 is vacuum-dried, the pattern of the substrate 11 becomes deeper as the aspect ratio (pattern depth / pattern width) increases. Since the liquid in the pattern groove becomes steam and gas, in order to suck efficiently from the initial stage, vacuum dry using the surface tension force and the function of the device using a surface tension rinse liquid that matches the pattern. do. Therefore, the vacuum exhaust port 23 can efficiently suck the inside 48 of the processing chamber cover 4 from the vacuum exhaust port 23 at a position higher than the substrate 11 to shorten the drying time of the substrate 11.

The present invention is used in the industry of manufacturing devices for cleaning and drying semiconductor substrates.

1 Substrate cleaning vacuum drying device 2 Processing chamber 3 Processing chamber base 4 Processing chamber cover 5 Arm 6 Slide shaft 7 Vacuum hose 8 Partition 9 Partition lid 10 Rotating part main body 11 Board 12 Cup 13 Cup cylinder 14 Board grip shaft 15 Drainage port 16 Drainage switching valve 17 Solenoid valve A
18 O-ring for processing chamber base 19 O-ring for rotating part 20 Drive motor 21 O-ring for vacuum 22 O-ring for drainage 23 Vacuum exhaust port 24 Vacuum switching valve 25 Solenoid valve B
26 Vacuum pump 27 Air source 28 Gas nozzle 29 Gas introduction source 30 Switching valve 31 Solenoid valve C
32 O-ring for gas 33 Exhaust port 34 Exhaust switching valve 35 Solenoid valve D
36 Exhaust fan 37 Cleaning nozzle 38 Swing shaft 39 Head side screwed cylinder 40 Vacuum flange 41 Board entrance / exit 42 Opening / closing Tobira 43 Tobira upper / lower cylinder 44 Upper slide guide 45 Lower slide guide 46 Drainage treatment tank 47 Maintenance lid 48 Inner 49 Connection lot 50 Vacuum chamber 51 Flange A
52 Mounting bolt 53 Drainage groove 54 Base center 55 Threaded part 56 Lot

Claims (3)

Outside the processing chamber 2, a metal rotating part main body 10 is attached from the lower side of the processing chamber base 3 via a flange A51 of a resin for chemicals such as fluororesin or vinyl chloride resin, and the processing chamber base 3 is attached from the flange A51. A metal mounting bolt 52 is mounted on the lower side to reinforce the strength of the mounting bolt 52 and prevent corrosion, and the partition wall 8 is joined to the processing chamber base 3 in the processing chamber 2 so that the partition wall lid 9 is a partition wall. In the processing chamber 2 surrounded by the processing chamber cover 4 fixed to 8 and moving with a gap between the partition wall lid 9, nitrogen gas hits the entire surface of the substrate 11 from the concave inner side 48 of the processing chamber cover 4. As described above, the gas nozzle 28 is used to inject the gas, the partition wall 8 is provided with the substrate inlet / outlet 41, and the opening / closing door 42 is opened / closed by the door upper / lower cylinder 43. The processing chamber cover 4 is lowered to the O-ring 18 for the processing chamber base mounted on the processing chamber base 3 side after the substrate 11 gripped by the shaft 14 is rotationally cleaned by the nozzle 37 attached to the swirling shaft 38 that swings. A substrate cleaning vacuum drying apparatus, characterized in that a means for depressurizing the vacuum chamber 50 by a vacuum pump 26 via a vacuum switching valve 24 in the closed vacuum chamber 50 is also provided in the processing chamber 2. When the shape of the inner 48 of the processing chamber cover 4 made of the resin of the processing chamber 2 is made into a cone or a sphere and lowered from the center toward the inner circumference, the wall thickness of the inner peripheral portion of the inner 48 becomes thicker and vacuum pressure is applied. Suppressing the dent in the central part and reducing the volume, making the base center 54 of the processing chamber base 3 in the processing chamber 2 medium and high to further reduce the volume of the vacuum chamber 50, and making the volume of the vacuum chamber 50 medium and high. The first aspect of claim 1, wherein the cleaning liquid scattered due to the inclination quickly flows into the drainage groove 53 and is quickly discharged to the drainage port 15 to eliminate the residual cleaning liquid, so that a means for drying the substrate 11 is provided. Substrate cleaning Vacuum drying equipment. To vacuum dry the inside of the vacuum chamber 50, the liquid in the deep pattern groove of the substrate 11 is vaporized from the steam, so to efficiently suck it into the vacuum exhaust port 23 from the initial stage, steam and gas are directed toward the upper part of the substrate 11. The substrate cleaning vacuum drying according to claim 1 or 2, wherein the vacuum exhaust port 23 is provided on the inner side 48 of the processing chamber cover 4 at a position higher than the substrate 11. Device.

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