JP2001316868A - カソード用シート、電解メッキ装置及び電解メッキ方法 - Google Patents
カソード用シート、電解メッキ装置及び電解メッキ方法Info
- Publication number
- JP2001316868A JP2001316868A JP2000135242A JP2000135242A JP2001316868A JP 2001316868 A JP2001316868 A JP 2001316868A JP 2000135242 A JP2000135242 A JP 2000135242A JP 2000135242 A JP2000135242 A JP 2000135242A JP 2001316868 A JP2001316868 A JP 2001316868A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- plating
- semiconductor wafer
- sheet
- electrolytic plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009713 electroplating Methods 0.000 title claims description 60
- 238000000034 method Methods 0.000 title claims description 18
- 238000007747 plating Methods 0.000 claims abstract description 68
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 230000002093 peripheral effect Effects 0.000 claims description 18
- 238000007789 sealing Methods 0.000 claims description 8
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 abstract description 67
- 230000007547 defect Effects 0.000 abstract description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 23
- 229910052802 copper Inorganic materials 0.000 description 22
- 239000010949 copper Substances 0.000 description 22
- 239000000758 substrate Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910000365 copper sulfate Inorganic materials 0.000 description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000001174 ascending effect Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Electroplating Methods And Accessories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000135242A JP2001316868A (ja) | 2000-05-08 | 2000-05-08 | カソード用シート、電解メッキ装置及び電解メッキ方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000135242A JP2001316868A (ja) | 2000-05-08 | 2000-05-08 | カソード用シート、電解メッキ装置及び電解メッキ方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001316868A true JP2001316868A (ja) | 2001-11-16 |
| JP2001316868A5 JP2001316868A5 (enExample) | 2007-06-14 |
Family
ID=18643356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000135242A Pending JP2001316868A (ja) | 2000-05-08 | 2000-05-08 | カソード用シート、電解メッキ装置及び電解メッキ方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001316868A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007169773A (ja) * | 2005-11-22 | 2007-07-05 | Electroplating Eng Of Japan Co | めっき装置 |
-
2000
- 2000-05-08 JP JP2000135242A patent/JP2001316868A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007169773A (ja) * | 2005-11-22 | 2007-07-05 | Electroplating Eng Of Japan Co | めっき装置 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070215 |
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| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070215 |
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| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070420 |
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| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20090416 |
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| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090512 |
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| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20090929 |