JP2001308472A - Ceramic circuit board - Google Patents
Ceramic circuit boardInfo
- Publication number
- JP2001308472A JP2001308472A JP2000124680A JP2000124680A JP2001308472A JP 2001308472 A JP2001308472 A JP 2001308472A JP 2000124680 A JP2000124680 A JP 2000124680A JP 2000124680 A JP2000124680 A JP 2000124680A JP 2001308472 A JP2001308472 A JP 2001308472A
- Authority
- JP
- Japan
- Prior art keywords
- circuit board
- ceramic substrate
- metal
- ceramic
- metal circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Manufacturing Of Printed Wiring (AREA)
- Structure Of Printed Boards (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、セラミック基板に
金属回路板をロウ付けにより接合したセラミック回路基
板に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic circuit board in which a metal circuit board is joined to a ceramic substrate by brazing.
【0002】[0002]
【従来の技術】近年、パワーモジュール用基板やスイッ
チングモジュール用基板等の回路基板として、セラミッ
ク基板上に被着させたメタライズ金属層に銀−銅合金等
のロウ材を介して銅等から成る金属回路板を接合させた
セラミック回路基板が用いられている。2. Description of the Related Art In recent years, as a circuit board such as a power module board or a switching module board, a metallized metal layer adhered on a ceramic substrate is formed of a metal such as copper through a brazing material such as a silver-copper alloy. A ceramic circuit board to which a circuit board is bonded is used.
【0003】かかるセラミック回路基板は、一般に酸化
アルミニウム質焼結体から成るセラミック基板の表面に
メタライズ金属層を被着させておき、該メタライズ金属
層に銅等の金属材料から成る金属回路板を銀ロウ等のロ
ウ材を介しロウ付けすることによって形成されており、
具体的には、例えば、酸化アルミニウム、酸化珪素、酸
化マグネシウム、酸化カルシウム等の原料粉末に適当な
有機バインダー、可塑剤、溶剤等を添加混合して泥漿状
と成すとともにこれを従来周知のドクターブレード法や
カレンダーロール法等のテープ成形技術を採用して複数
のセラミックグリーンシートを得、次に前記セラミック
グリーンシート上にタングステンやモリブデン等の高融
点金属粉末に適当な有機バインダー、溶剤を添加混合し
て得た金属ペーストをスクリーン印刷法等の印刷技術を
採用することによって所定パターンに印刷塗布し、次に
前記金属ペーストが所定パターンに印刷塗布されたセラ
ミックグリーンシートを必要に応じて上下に積層すると
ともに還元雰囲気中、約1600℃の温度で焼成し、セ
ラミックグリーンシートと金属ペーストを焼結一体化さ
せて表面にメタライズ金属層を有する酸化アルミニウム
質焼結体から成るセラミック基板を形成し、最後に前記
セラミック基板表面のメタライズ金属層上に銅等から成
る所定パターンの金属回路板を間に銀ロウ等のロウ材を
挟んで載置させるとともにこれを還元雰囲気中、約90
0℃の温度に加熱してロウ材を溶融させ、該溶融したロ
ウ材でメタライズ金属層と金属回路板とを接合すること
によって製作される。In such a ceramic circuit board, a metallized metal layer is generally adhered to the surface of a ceramic substrate made of an aluminum oxide sintered body, and a metal circuit board made of a metal material such as copper is applied to the metallized metal layer. It is formed by brazing through a brazing material such as brazing,
More specifically, for example, a raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide is mixed with a suitable organic binder, a plasticizer, a solvent, and the like to form a slurry, which is then mixed with a conventionally known doctor blade. A plurality of ceramic green sheets are obtained by adopting a tape forming technique such as a method or a calendar roll method, and then an appropriate organic binder and a solvent are added to the high melting point metal powder such as tungsten and molybdenum on the ceramic green sheets and mixed. The obtained metal paste is printed and applied in a predetermined pattern by employing a printing technique such as a screen printing method, and then the ceramic green sheets in which the metal paste is printed and applied in a predetermined pattern are vertically laminated as necessary. And firing in a reducing atmosphere at a temperature of about 1600 ° C. A metal substrate and a metal paste are sintered and integrated to form a ceramic substrate made of an aluminum oxide sintered body having a metallized metal layer on the surface, and finally a predetermined metal plate made of copper or the like is formed on the metallized metal layer on the surface of the ceramic substrate. The metal circuit board of the pattern is placed with a brazing material such as silver brazing interposed therebetween, and the metal circuit board is placed in a reducing atmosphere for about 90 minutes.
It is manufactured by heating to a temperature of 0 ° C. to melt the brazing material and joining the metallized metal layer and the metal circuit board with the molten brazing material.
【0004】[0004]
【発明が解決しようとする課題】しかしながら、この従
来のセラミック回路基板においては、一般にセラミック
基板が酸化アルミニウム質焼結体により形成されてお
り、該酸化アルミニウム質焼結体は熱伝達率が20W/
m・Kと小さいため金属回路板上に載置固定された電子
部品の作動時に発生する熱をセラミック基板を介して外
部に効率よく放散させることができず、その結果、電子
部品が該電子部品の発する熱によって高温となり、電子
部品に熱破壊や特性に劣化を招来して電子部品を安定
に、かつ信頼性よく作動させることができないという問
題点を有していた。However, in this conventional ceramic circuit board, the ceramic substrate is generally formed of an aluminum oxide sintered body, and the aluminum oxide sintered body has a heat transfer coefficient of 20 W /
m · K, the heat generated during the operation of the electronic component mounted and fixed on the metal circuit board cannot be efficiently dissipated to the outside via the ceramic substrate. As a result, the electronic component becomes Has caused a problem that the electronic component is heated to a high temperature, which causes thermal destruction and deterioration of characteristics of the electronic component, so that the electronic component cannot be operated stably and reliably.
【0005】そこで上記問題点を解決するために、セラ
ミック基板を熱伝達率が60W/m・K以上と非常に高
い窒化珪素質焼結体で形成することが考えられる。In order to solve the above problems, it is conceivable to form the ceramic substrate from a silicon nitride sintered body having a very high heat transfer coefficient of 60 W / m · K or more.
【0006】かかるセラミック基板を窒化珪素質焼結体
で形成した場合、窒化珪素質焼結体は固相焼結であり、
ガラス質をあまり含有しておらずメタライズ金属層の強
固な被着が困難であるため窒化珪素質焼結体からなるセ
ラミック基板への金属回路板の取着は窒化珪素質焼結体
と直接反応して接合するチタン、ジルコニウム、ハフニ
ウム及び/またはそれらの水素化物を少なくとも1種含
有させた活性金属ロウ材を使用しなければならない。When such a ceramic substrate is formed of a silicon nitride-based sintered body, the silicon nitride-based sintered body is solid-phase sintered,
Since it does not contain much vitreous material and it is difficult to apply a metallized metal layer firmly, the attachment of a metal circuit board to a ceramic substrate made of silicon nitride-based sintered body reacts directly with the silicon nitride-based sintered body. An active metal brazing material containing at least one of titanium, zirconium, hafnium and / or a hydride thereof must be used.
【0007】しかしながら、窒化珪素質焼結体は固相焼
結を容易に行うために内部に焼結助剤が多量に含有さ
れ、その一部が窒化珪素質焼結体の表面に15〜20%
程度の面積で存在しており、かかる焼結助剤は活性金属
ロウ材と濡れ性が悪いため窒化珪素質焼結体からなるセ
ラミック基板に活性金属ロウ材を介して金属回路板を強
固に接合させることはできずセラミック回路基板として
の信頼性が低いものとなる欠点を誘発する。However, the silicon nitride-based sintered body contains a large amount of a sintering aid in order to easily perform solid-phase sintering, and a part of the sintering aid is added to the surface of the silicon nitride-based sintered body by 15 to 20 parts. %
Since the sintering aid has poor wettability with the active metal brazing material, the metal circuit board is firmly bonded to the ceramic substrate made of silicon nitride sintered body via the active metal brazing material. It cannot be performed, and causes a disadvantage that the reliability as the ceramic circuit board is low.
【0008】本発明は上記欠点に鑑み案出されたもの
で、その目的はセラミック基板と金属回路板との接合を
強固とし、かつ搭載される電子部品の発生する熱を外部
に効率よく放散することができるセラミック回路基板を
提供することにある。The present invention has been devised in view of the above-mentioned drawbacks, and has as its object to strengthen the bonding between a ceramic substrate and a metal circuit board, and to efficiently dissipate heat generated by mounted electronic components to the outside. It is to provide a ceramic circuit board which can be used.
【0009】[0009]
【課題を解決するための手段】本発明は、セラミック基
板の表面に活性金属ロウ材を介して金属回路板を取着し
て成るセラミック回路基板であって、前記セラミック基
板は主成分としての窒化珪素と焼結助剤とで形成されて
いる窒化珪素質焼結体から成り、かつ金属回路板の取着
される表面の面積に対し、該表面に露出している焼結助
剤の面積が5%以下であることを特徴とするものであ
る。SUMMARY OF THE INVENTION The present invention is a ceramic circuit board comprising a ceramic substrate and a metal circuit board attached to the surface of the ceramic substrate via an active metal brazing material. It is made of a silicon nitride sintered body formed of silicon and a sintering aid, and the area of the surface of the sintering aid that is exposed on the surface relative to the area of the surface to which the metal circuit board is attached. It is characterized by being 5% or less.
【0010】本発明のセラミック回路基板によれば、セ
ラミック基板を熱伝達率が60W/m・K以上と非常に
高い窒化珪素質焼結体で形成したことから、金属回路板
に載置固定された電子部品が作動時に大量の熱を発生し
たとしてもその熱は金属回路板およびセラミック基板を
介して大気中に良好に放散され、その結果、電子部品は
適温となり、電子部品を常に安定、かつ正常に作動させ
ることが可能となる。According to the ceramic circuit board of the present invention, since the ceramic substrate is formed of a silicon nitride sintered body having a very high heat transfer coefficient of 60 W / m · K or more, it is mounted and fixed on a metal circuit board. Even if the electronic components generate a large amount of heat during operation, the heat is satisfactorily dissipated into the atmosphere through the metal circuit board and the ceramic substrate. It is possible to operate normally.
【0011】また、本発明のセラミック回路基板によれ
ば、金属回路板の取着されるセラミック基板表面の面積
に対し、該表面に露出している焼結助剤の面積を5%以
下としたことからセラミック基板と活性金属ロウ材との
接合面積が広いものとなり、その結果、セラミック基板
に対する金属回路板の取着を極めて強固となすことが可
能となる。Further, according to the ceramic circuit board of the present invention, the area of the sintering aid exposed on the surface of the ceramic substrate surface on which the metal circuit board is attached is set to 5% or less. Therefore, the bonding area between the ceramic substrate and the active metal brazing material becomes large, and as a result, the attachment of the metal circuit board to the ceramic substrate can be made extremely strong.
【0012】[0012]
【発明の実施の形態】次に、本発明を添付図面に示す実
施例に基づき詳細に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail based on embodiments shown in the accompanying drawings.
【0013】図1は、本発明のセラミック回路基板の一
実施例を示し、1はセラミック基板、2は活性金属ロウ
材、3は金属回路板である。FIG. 1 shows an embodiment of a ceramic circuit board according to the present invention, wherein 1 is a ceramic board, 2 is an active metal brazing material, and 3 is a metal circuit board.
【0014】前記セラミック基板1は四角形状をなし、
その上面に活性金属ロウ材2を介して金属回路板3がロ
ウ付けされている。The ceramic substrate 1 has a square shape,
A metal circuit board 3 is brazed to the upper surface via an active metal brazing material 2.
【0015】前記セラミック基板1は金属回路板3を支
持する支持部材として作用し、窒化珪素質焼結体で形成
されている。The ceramic substrate 1 functions as a supporting member for supporting the metal circuit board 3, and is formed of a silicon nitride sintered body.
【0016】前記窒化珪素質焼結体から成るセラミック
基板1はその熱伝達率が60W/m・K以上であり、熱
を伝え易いことから金属回路板3に電子部品を載置固定
し、該電子部品が多量の熱を発生したとしてもその熱は
金属回路板3およびセラミック基板1を介して大気中に
良好に放散され、その結果、電子部品は適温となり、電
子部品を常に安定、かつ正常に作動させることができ
る。The ceramic substrate 1 made of the silicon nitride sintered body has a heat transfer coefficient of 60 W / m · K or more and is easy to conduct heat. Even if the electronic components generate a large amount of heat, the heat is satisfactorily dissipated into the atmosphere via the metal circuit board 3 and the ceramic substrate 1, and as a result, the electronic components have an appropriate temperature, and the electronic components are always stable and normal. Can be operated.
【0017】前記窒化珪素質焼結体から成るセラミック
基板1は、窒化珪素、酸化アルミニウム、酸化マグネシ
ウム等の原料粉末と酸化イットリウム、酸化セシウム、
酸化サマリウム、酸化エルビウム、酸化イッテリビウ
ム、酸化ルテニウム等の希土類元素から成る焼結助剤粉
末に適当な有機バインダー、可塑剤、溶剤を添加混合し
て泥漿状となすとともに該泥漿物を従来周知のドクター
ブレード法やカレンダーロール法を採用することによっ
てセラミックグリーンシート(セラミック生シート)を
形成し、次に前記セラミックグリーンシートに適当な打
ち抜き加工を施し、所定形状となすとともに必要に応じ
て複数枚を積層して成形体となし、しかる後、これを窒
素雰囲気等の非酸化性雰囲気中、1600乃至2000
℃の高温で焼成することによって製作される。The ceramic substrate 1 made of the silicon nitride-based sintered body includes raw material powders such as silicon nitride, aluminum oxide, and magnesium oxide, yttrium oxide, cesium oxide, and the like.
An appropriate organic binder, a plasticizer, and a solvent are added to a sintering aid powder composed of a rare earth element such as samarium oxide, erbium oxide, ytterbium oxide, and ruthenium oxide to form a slurry and mix the slurry with a conventionally known doctor. A ceramic green sheet (ceramic green sheet) is formed by employing a blade method or a calendar roll method, and then the ceramic green sheet is subjected to an appropriate punching process to form a predetermined shape, and a plurality of sheets are laminated as necessary. Then, it is formed into a molded body.
It is manufactured by firing at a high temperature of ° C.
【0018】また前記窒化珪素質焼結体から成るセラミ
ック基板1は、その上面に金属回路板3が活性金属ロウ
材2を介してロウ付け取着されている。A ceramic circuit board 3 made of a silicon nitride sintered body has a metal circuit board 3 attached to the upper surface thereof by brazing via an active metal brazing material 2.
【0019】前記金属回路板3は銅やアルミニウム等の
金属材料から成り、銅やアルミニウム等のインゴット
(塊)に圧延加工法や打ち抜き加工法等、従来周知の金
属加工法を施すことによって、例えば、厚さが500μ
mで、所定パターン形状に製作される。The metal circuit board 3 is made of a metal material such as copper or aluminum. By applying a conventionally known metal working method such as a rolling method or a punching method to an ingot of copper or aluminum, for example, , Thickness 500μ
m, it is manufactured in a predetermined pattern shape.
【0020】前記金属回路板3は銅から成る場合、金属
回路板3を無酸素銅で形成しておくと、該無酸素銅はロ
ウ付けの際に銅の表面が銅中に存在する酸素により酸化
されることなく活性金属ロウ材2との濡れ性が良好とな
り、セラミック基板1への活性金属ロウ材2を介しての
接合が強固となる。従って、前記金属回路板3はこれを
無酸素銅で形成しておくことが好ましい。In the case where the metal circuit board 3 is made of copper, if the metal circuit board 3 is formed of oxygen-free copper, the surface of the copper during the brazing is reduced by the oxygen existing in the copper. The wettability with the active metal brazing material 2 is improved without being oxidized, and the bonding to the ceramic substrate 1 via the active metal brazing material 2 is strengthened. Therefore, it is preferable that the metal circuit board 3 is formed of oxygen-free copper.
【0021】また前記金属回路板3はその表面にニッケ
ルから成る良導電性で、かつ耐蝕性及び活性金属ロウ材
2との濡れ性が良好な金属をメッキ法により被着させて
おくと、金属回路板3と外部電気回路との電気的接続を
良好と成すとともに金属回路板3に半導体素子等の電子
部品を半田を介して強固に接着させることができる。従
って、前記金属回路板3はその表面にニッケルから成る
良導電性で、かつ耐蝕性及び活性金属ロウ材2との濡れ
性が良好な金属をメッキ法により被着させておくことが
好ましい。When the metal circuit board 3 is coated with a metal having good conductivity and good corrosion resistance and good wettability with the active metal brazing material 2 by plating on the surface thereof, the metal A good electrical connection between the circuit board 3 and an external electric circuit can be achieved, and an electronic component such as a semiconductor element can be firmly bonded to the metal circuit board 3 via solder. Therefore, it is preferable that the metal circuit board 3 be coated with a metal made of nickel and having good conductivity, good corrosion resistance and good wettability with the active metal brazing material 2 by plating.
【0022】更に前記金属回路板3の表面にニッケルか
ら成るメッキ層を被着させる場合、内部に燐を8〜15
重量%含有させてニッケル−燐のアモルファス合金とし
ておくとニッケルから成るメッキ層の表面酸化を良好に
防止して活性金属ロウ材2との濡れ性等を長く維持する
ことができる。従って、前記金属回路板3の表面にニッ
ケルから成るメッキ層を被着させる場合、内部に燐を8
〜15重量%含有させてニッケル−燐のアモルファス合
金としておくことが好ましい。Further, when a plating layer made of nickel is applied to the surface of the metal circuit board 3, phosphorus is added in an amount of 8 to 15 μm.
When the nickel-phosphorus amorphous alloy is contained in an amount of about 0.5% by weight, the surface oxidation of the plating layer made of nickel can be prevented well, and the wettability with the active metal brazing material 2 can be maintained for a long time. Therefore, when a plating layer made of nickel is applied to the surface of the metal circuit board 3, phosphorous is added to the inside thereof.
It is preferable that the content of the nickel-phosphorus amorphous alloy is set to be contained in an amount of about 15% by weight.
【0023】なお、前記金属回路板3の表面にニッケル
−燐のアモルファス合金からなるメッキ層を被着させる
場合、ニッケルに対する燐の含有量が8重量%未満、あ
るいは15重量%を超えたときニッケル−燐のアモルフ
ァス合金を形成するのが困難となってメッキ層に半田を
強固に接着させることができなくなる危険性がある。従
って、前記金属回路板3の表面にニッケル−燐のアモル
ファス合金からなるメッキ層を被着させる場合いはニッ
ケルに対する燐の含有量を8〜15重量%の範囲として
おくことが好ましく、好適には10〜15重量%の範囲
がよい。When a plating layer made of a nickel-phosphorus amorphous alloy is deposited on the surface of the metal circuit board 3, when the content of phosphorus with respect to nickel is less than 8% by weight or more than 15% by weight, There is a danger that it becomes difficult to form an amorphous alloy of phosphorus and the solder cannot be firmly bonded to the plating layer. Therefore, when a plating layer made of a nickel-phosphorus amorphous alloy is applied to the surface of the metal circuit board 3, the content of phosphorus with respect to nickel is preferably set in the range of 8 to 15% by weight, and more preferably. The range of 10 to 15% by weight is good.
【0024】また、前記金属回路板3の表面に被着され
るニッケルから成るメッキ層は、その厚みが1.5μm
未満の場合、金属回路板3の表面をニッケルから成るメ
ッキ層で完全に被覆することができず、金属回路板3の
酸化腐蝕を有効に防止することができなくなる危険性が
あり、また3μmを超えるとニッケルから成るメッキ層
の内部に内在する内在応力が大きくなってセラミック基
板1に反りや割れ等が発生してしまう。特にセラミック
基板1の厚さが700μm以下の薄いものになった場合
にはこのセラミック基板1の反りや割れ等が顕著となっ
てしまう。従って、前記金属回路板3の表面に被着され
るニッケルから成るメッキ層はその厚みを1.5μm〜
3μmの範囲としておくことが好ましい。The plating layer made of nickel, which is deposited on the surface of the metal circuit board 3, has a thickness of 1.5 μm.
If it is less than 3, the surface of the metal circuit board 3 cannot be completely covered with the plating layer made of nickel, and there is a risk that oxidation corrosion of the metal circuit board 3 cannot be effectively prevented. If it exceeds, the intrinsic stress existing inside the plating layer made of nickel becomes large, and the ceramic substrate 1 will be warped or cracked. In particular, when the thickness of the ceramic substrate 1 is as thin as 700 μm or less, warpage or cracking of the ceramic substrate 1 becomes remarkable. Therefore, the thickness of the plating layer made of nickel deposited on the surface of the metal circuit board 3 is 1.5 μm to
It is preferable to set the range to 3 μm.
【0025】更に前記セラミック基板1に金属回路板3
をロウ付け取着する活性金属ロウ材2はセラミック基板
1と金属回路板3とを接合する接合材として作用し、例
えば、銀ロウ材(銀:72重量%、銅:28重量%)や
アルミニウムロウ材(アルミニウム:88重量%、シリ
コン:12重量%)等から成るロウ材にチタン、タング
ステン、ハフニウム及び/またはその水素化物の少なく
とも1種を2乃至5重量%添加したものが好適に使用さ
れる。Further, a metal circuit board 3 is provided on the ceramic substrate 1.
The active metal brazing material 2 for brazing is used as a bonding material for bonding the ceramic substrate 1 and the metal circuit board 3, and for example, silver brazing material (silver: 72% by weight, copper: 28% by weight) or aluminum A brazing material made of a brazing material (aluminum: 88% by weight, silicon: 12% by weight) or the like is preferably used in which at least one of titanium, tungsten, hafnium and / or a hydride thereof is added in an amount of 2 to 5% by weight. You.
【0026】前記活性金属ロウ材2によるセラミック基
板1への金属回路板3の取着は、セラミック基板1上に
金属回路板3を間に活性金属ロウ材2を挟んで載置し、
次にこれを真空中もしくは中性、還元雰囲気中、所定温
度(銀ロウ材の場合は約900℃、アルミニウムロウ材
の場合は約600℃)で加熱処理し、活性金属ロウ材2
を溶融せしめるとともにセラミック基板1の上面と金属
回路板3の下面とに接合させることによって行われる。The attachment of the metal circuit board 3 to the ceramic substrate 1 by the active metal brazing material 2 involves placing the metal circuit board 3 on the ceramic substrate 1 with the active metal brazing material 2 interposed therebetween.
Next, this is heat-treated in a vacuum or in a neutral or reducing atmosphere at a predetermined temperature (about 900 ° C. for silver brazing material or about 600 ° C. for aluminum brazing material) to obtain an active metal brazing material 2.
Is melted and bonded to the upper surface of the ceramic substrate 1 and the lower surface of the metal circuit board 3.
【0027】本発明においては金属回路板3が取着され
るセラミック基板1の表面面積に対し、該表面に露出し
ている焼結助剤の面積を5%以下としておくことが重要
である。In the present invention, it is important that the area of the sintering aid exposed on the surface of the ceramic substrate 1 on which the metal circuit board 3 is attached is set to 5% or less.
【0028】前記金属回路板3が取着されるセラミック
基板1表面の焼結助剤面積を5%以下としておくとセラ
ミック基板1に金属回路板3を活性金属ロウ材2を介し
て取着する際、セラミック基板1と活性金属ロウ材2と
の接合面積が広いものとなり、その結果、セラミック基
板1に対する金属回路板3の取着を極めて強固となすこ
とができる。When the area of the sintering aid on the surface of the ceramic substrate 1 to which the metal circuit board 3 is attached is set to 5% or less, the metal circuit board 3 is attached to the ceramic substrate 1 via the active metal brazing material 2. In this case, the bonding area between the ceramic substrate 1 and the active metal brazing material 2 becomes large, and as a result, the attachment of the metal circuit board 3 to the ceramic substrate 1 can be made extremely strong.
【0029】前記セラミック基板1は、その表面の焼結
助剤面積が5%を超えると、セラミック基板1と活性金
属ロウ材2との接合面積が小さくなってセラミック基板
1と活性金属ロウ材2との接合強度が弱いものとなって
しまう。従って、前記セラミック基板1の金属回路板3
が取着される表面の焼結助剤面積は5%以下の範囲に特
定される。When the area of the sintering aid on the surface of the ceramic substrate 1 exceeds 5%, the bonding area between the ceramic substrate 1 and the active metal brazing material 2 decreases, and the ceramic substrate 1 and the active metal brazing material 2 And the bonding strength with the metal is weak. Therefore, the metal circuit board 3 of the ceramic substrate 1
Is specified in the range of 5% or less.
【0030】なお、前記セラミック基板1の表面に露出
する焼結助剤の面積を5%以下とするにはセラミック基
板1を形成する窒化珪素に比べ焼結助剤が柔らかいこと
を利用し、セラミック基板1の表面に特殊なブラスト処
理を施こし、焼結助剤を選択的に除去することによって
行われる。In order to reduce the area of the sintering aid exposed on the surface of the ceramic substrate 1 to 5% or less, the sintering aid is softer than the silicon nitride forming the ceramic substrate 1 and the ceramic sintering aid is used. This is performed by subjecting the surface of the substrate 1 to a special blasting treatment and selectively removing the sintering aid.
【0031】また前記特殊なブラスト処理としては、具
体的には、粒径20〜250μmのアルミナ球状粉末等
の研磨剤を適量添加した水等の溶液を0.1〜0.5M
Paの吹きつけ圧力でセラミック基板1の上面に1〜1
0分間吹き付けることによって実施され、このブラスト
処理によりセラミック基板1表面の焼結助剤面積は5%
以下となる。As the special blast treatment, specifically, a solution of water or the like to which an appropriate amount of an abrasive such as alumina spherical powder having a particle diameter of 20 to 250 μm is added is 0.1 to 0.5M.
1 to 1 on the upper surface of the ceramic substrate 1 with a blowing pressure of Pa
The blasting process is performed by spraying for 0 minute, and the sintering aid area on the surface of the ceramic substrate 1 is 5%
It is as follows.
【0032】前記ブラスト処理において、アルミナ球状
粉末の粒径が20μm未満となるとセラミック基板1の
表面に露出する焼結助剤を効率よく除去するのが困難と
なって露出する焼結助剤の面積を5%以下にするのがで
きなくなる危険性があり、また250μmを超えるとセ
ラミック基板1の表面に20MPaを超える残留応力が
内在し、セラミック基板1に金属回路板3を安定して強
固に接合させることができなくなる危険性がある。従っ
て、前記アルミナ球状粉末の粒径は20〜250μmの
範囲としておくことが好ましい。In the blasting process, when the particle diameter of the alumina spherical powder is less than 20 μm, it is difficult to efficiently remove the sintering aid exposed on the surface of the ceramic substrate 1 and the area of the exposed sintering aid is reduced. If the thickness exceeds 250 μm, residual stress exceeding 20 MPa is present on the surface of the ceramic substrate 1, and the metal circuit board 3 is stably and firmly joined to the ceramic substrate 1. There is a risk of not being able to do so. Therefore, it is preferable that the particle diameter of the alumina spherical powder is in the range of 20 to 250 μm.
【0033】また前記吹きつけ圧力は0.1MPa未満
となるとセラミック基板1の表面に露出する焼結助剤を
効率よく除去するのが困難となって露出する焼結助剤の
面積を5%以下にするのができなくなる危険性があり、
また0.5MPaを超えるとセラミック基板1の表面に
20MPaを超える残留応力が内在し、セラミック基板
1に金属回路板3を安定して強固に接合させることがで
きなくなる危険性がある。従って、前記吹きつけ圧力は
0.1〜0.5MPaの範囲としておくことが好まし
い。When the blowing pressure is less than 0.1 MPa, it is difficult to efficiently remove the sintering agent exposed on the surface of the ceramic substrate 1 and the area of the exposed sintering agent is 5% or less. There is a danger that you will not be able to
If it exceeds 0.5 MPa, residual stress exceeding 20 MPa is present on the surface of the ceramic substrate 1, and there is a risk that the metal circuit board 3 cannot be stably and firmly joined to the ceramic substrate 1. Therefore, it is preferable that the spray pressure be in the range of 0.1 to 0.5 MPa.
【0034】かくして、上述のセラミック回路基板によ
れば、金属回路板3の上面に半田を間に挟んで電子部品
の電極を当接させ、しかる後、これを所定温度(約18
0℃)に加熱し、半田を溶融させるとともに該溶融した
半田を金属回路板3及び電子部品の電極に接合させるこ
とによって電子部品は金属回路板3に電気的に接続さ
れ、金属回路板3を外部電気回路に接続すれば電子部品
は金属回路板3を介して外部電気回路に電気的に接続さ
れることとなる。Thus, according to the above-described ceramic circuit board, the electrodes of the electronic component are brought into contact with the upper surface of the metal circuit board 3 with the solder interposed therebetween, and then the electrode is brought to a predetermined temperature (about 18).
0 ° C.) to melt the solder and join the melted solder to the metal circuit board 3 and the electrodes of the electronic component, whereby the electronic component is electrically connected to the metal circuit board 3 and the metal circuit board 3 When connected to an external electric circuit, the electronic component is electrically connected to the external electric circuit via the metal circuit board 3.
【0035】なお、本発明は上述の実施例に限定される
ものではなく、本発明の趣旨を逸脱しない範囲であれば
種々の変更は可能であり、例えば、上述の実施例ではセ
ラミック基板1の表面に研磨剤を含有した溶液を吹き付
けるブラスト処理を施すことによってセラミック基板1
の表面に露出する焼結助剤を選択的に除去したが、これ
に限定されるものではなく、水とアルミナ粉末から成る
メディアが収容されている容器内にセラミック基板1を
投入し、しかる後、前記容器を回転、或いは振動させメ
ディアをセラミック基板1の表面の露出する焼結助剤に
接触させて除去する、いわゆる、回転バレル処理や振動
バレル処理等の方法を用いてもよい。It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. The ceramic substrate 1 is subjected to a blast process of spraying a solution containing an abrasive on the surface.
The sintering aid exposed on the surface of the substrate was selectively removed. However, the present invention is not limited to this. The ceramic substrate 1 is put into a container containing a medium made of water and alumina powder, and then Alternatively, the container may be rotated or vibrated to remove the medium by bringing the medium into contact with a sintering aid that exposes the surface of the ceramic substrate 1, that is, a method such as a so-called rotary barrel treatment or vibration barrel treatment may be used.
【0036】[0036]
【発明の効果】本発明のセラミック回路基板によれば、
セラミック基板を熱伝達率が60W/m・K以上と非常
に高い窒化珪素質焼結体で形成したことから、金属回路
板に載置固定された電子部品が作動時に大量の熱を発生
したとしてもその熱は金属回路板およびセラミック基板
を介して大気中に良好に放散され、その結果、電子部品
は適温となり、電子部品を常に安定、かつ正常に作動さ
せることが可能となる。According to the ceramic circuit board of the present invention,
Since the ceramic substrate is formed of a silicon nitride sintered body having a very high heat transfer coefficient of 60 W / m · K or more, the electronic components mounted and fixed on the metal circuit board generate a large amount of heat during operation. Also, the heat is satisfactorily dissipated into the atmosphere via the metal circuit board and the ceramic substrate. As a result, the electronic component is at an appropriate temperature, and the electronic component can always be operated stably and normally.
【0037】また、本発明のセラミック回路基板によれ
ば、金属回路板の取着されるセラミック基板表面の面積
に対し、該表面に露出している焼結助剤の面積を5%以
下としたことからセラミック基板と活性金属ロウ材との
接合面積が広いものとなり、その結果、セラミック基板
に対する金属回路板の取着を極めて強固となすことが可
能となる。According to the ceramic circuit board of the present invention, the area of the sintering aid exposed on the surface of the ceramic substrate on which the metal circuit board is attached is set to 5% or less. Therefore, the bonding area between the ceramic substrate and the active metal brazing material becomes large, and as a result, the attachment of the metal circuit board to the ceramic substrate can be made extremely strong.
【図1】本発明のセラミック回路基板の一実施例を示す
断面図である。FIG. 1 is a sectional view showing one embodiment of a ceramic circuit board of the present invention.
1・・・・セラミック基板 2・・・・活性金属ロウ材 3・・・・金属回路板 1. Ceramic substrate 2. Active metal brazing material 3. Metal circuit board
Claims (1)
介して金属回路板を取着して成るセラミック回路基板で
あって、前記セラミック基板は主成分としての窒化珪素
と焼結助剤とで形成されている窒化珪素質焼結体から成
り、かつ金属回路板の取着される表面の面積に対し、該
表面に露出している焼結助剤の面積が5%以下であるこ
とを特徴とするセラミック回路基板。1. A ceramic circuit board comprising a ceramic circuit board and a metal circuit board attached to the surface thereof via an active metal brazing material, wherein said ceramic board comprises silicon nitride as a main component and a sintering aid. The surface of the sintering aid exposed to the surface is 5% or less with respect to the area of the surface to which the metal circuit board is attached, which is formed of the formed silicon nitride-based sintered body. Ceramic circuit board.
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JP2000124680A JP3758939B2 (en) | 2000-04-25 | 2000-04-25 | Ceramic circuit board |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2000124680A JP3758939B2 (en) | 2000-04-25 | 2000-04-25 | Ceramic circuit board |
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Publication Number | Publication Date |
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JP2001308472A true JP2001308472A (en) | 2001-11-02 |
JP3758939B2 JP3758939B2 (en) | 2006-03-22 |
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JP (1) | JP3758939B2 (en) |
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2000
- 2000-04-25 JP JP2000124680A patent/JP3758939B2/en not_active Expired - Fee Related
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