JP2001298043A - Semiconductor device and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enhance connection reliability of electrode pads on a semiconductor substrate with respect to an insulating circuit board. SOLUTION: Electrode pads 1 on a semiconductor substrate 3 are mounted to face the terminal electrodes 15 on the back face trough openings 23 in an insulated circuit board 11 and connected with the terminal electrodes 15 by means of connection conductors 5 passing through the openings 23.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a technology for mounting a semiconductor substrate on an insulated circuit board. More specifically, the present invention relates to a semiconductor device in which electrode pads on a semiconductor substrate and terminal electrodes on an insulated circuit board are connected by connection conductors through through holes provided in the insulated circuit board, and a method of manufacturing the same.

[0002]

2. Description of the Related Art FIG. 8 is a cross-sectional view showing the vicinity of a connection portion where a semiconductor substrate is mounted on an insulated circuit board in a conventional semiconductor device. 8, reference numeral 3 denotes a semiconductor substrate, 1 denotes an electrode pad of the semiconductor substrate 3, 25 denotes a base metal film for connection provided on the electrode pad 1, 7 denotes a protective insulating film of the semiconductor substrate 3, 1
1 is an insulated circuit board, 15 is a terminal electrode of the insulated circuit board 11, 31 is a bump (eutectic solder) for electrically connecting the electrode pad 1 and the terminal electrode 11, and 21 is a space between the semiconductor substrate 1 and the insulated circuit board 11. The sealing resin for sealing, 27 indicates a solder resist, and 30 'indicates a conventional semiconductor device including these.

Referring to FIG. 8, a conventional semiconductor device 3
0 ′, the connection base metal film 25 provided on the electrode pad 1 of the semiconductor substrate 3 and the terminal electrode 15 on the insulated circuit board 11
After the bumps 31 (eutectic solder) provided thereon are positioned so as to correspond to each other, the bumps 31 are welded and joined to the connection base metal film 25. After that, the space between the insulating circuit board 11 and the semiconductor substrate 3 is sealed with a sealing resin 21.

[0004]

In such a semiconductor device, when the pitch of the electrode pads 1 on the semiconductor substrate 3 is reduced with the increase in the degree of integration of the device, the gap between the semiconductor substrate 3 and the insulating circuit substrate 11 is increased. Narrows. Therefore, there is a possibility that a mismatch in thermal expansion between the semiconductor substrate 3 and the insulated circuit board 11 may occur, and there is a problem that stress generated in the bumps 31 increases.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems, and connects an electrode pad on a semiconductor substrate to a terminal electrode of an insulated circuit board by using a through hole provided in the insulated circuit board. It realizes a device structure for connection via a conductor for use. Thereby, the connection reliability of the electrode pads on the semiconductor substrate with respect to the insulating circuit substrate can be improved. At the same time, the connection reliability of the electrode pads on the semiconductor substrate with respect to the insulated circuit board can be ensured even when the pitch of the electrode pads is reduced due to the high integration of semiconductor devices.

[0006]

According to a first aspect of the present invention, there is provided a semiconductor device comprising: a semiconductor substrate on which an electrode pad is formed;
Having a main surface and a back surface, the main surface is disposed to face the electrode pad of the semiconductor substrate, and at a position corresponding to the electrode pad, a terminal electrode is formed between the main surface and the back surface or on the back surface. An insulating circuit board having an opening extending from the main surface to the terminal electrode, and a connection conductor that passes through the opening and connects between an electrode pad of the semiconductor substrate and a terminal electrode of the insulating circuit board. , Is provided.

According to a second aspect of the present invention, there is provided a semiconductor device having a semiconductor substrate on which electrode pads are formed, a main surface and a back surface, wherein the main surface is arranged to face the electrode pads of the semiconductor substrate. An opening is formed at a position corresponding to the electrode pad, an insulated circuit board having a terminal electrode formed on an inner wall surface of the opening, and an electrode pad of the semiconductor substrate and a terminal electrode of the insulated circuit board passing through the opening. And a connection conductor for connecting between them.

According to a third aspect of the present invention, there is provided a semiconductor device having a semiconductor substrate on which electrode pads are formed, a main surface and a back surface, wherein the main surface is disposed so as to face the electrode pads of the semiconductor substrate. An insulating circuit board in which an opening is formed at a position corresponding to the electrode pad, and a terminal electrode is formed around the opening in contact with the opening on an intermediate plane between the main surface and the back surface or on the back surface And a connection conductor that passes through the opening and connects between the electrode pad of the semiconductor substrate and the terminal electrode of the insulated circuit board.

A semiconductor device according to a fourth aspect of the present invention has a semiconductor substrate on which electrode pads are formed, a main surface and a back surface, wherein the main surface is disposed so as to face the electrode pads of the semiconductor substrate. An opening is formed at a position corresponding to the electrode pad, an insulated circuit board having a terminal electrode formed near the opening on the back surface, and through the opening, the electrode pad of the semiconductor substrate and the insulated circuit board. And a connection conductor for connecting between the terminal electrodes.

A semiconductor device according to a fifth aspect of the present invention is the semiconductor device according to any one of the first to fourth aspects, wherein the insulating circuit board has a main surface, a back surface, or an intermediate layer between the main surface and the back surface. In total, two or more wiring layers are provided.

According to a sixth aspect of the present invention, in the semiconductor device according to the fifth aspect, two or more wiring layers of the main surface or the intermediate layer are electrically connected to the connection conductor at the opening. Connected.

According to a seventh aspect of the present invention, in the semiconductor device according to any one of the first to fourth aspects, the connecting conductor is formed of a continuous body of the same material.

According to an eighth aspect of the present invention, in the semiconductor device according to any one of the first to fourth aspects, the connection conductor is formed by laminating two or more kinds of materials.

A semiconductor device according to a ninth aspect of the present invention is the semiconductor device according to the fourth aspect, wherein the connecting conductor is formed of a lump-shaped first conductor portion joined to an electrode pad of the semiconductor substrate. A linear second conductor portion extending from one conductive portion to the terminal electrode of the insulated circuit board.

According to a tenth aspect of the present invention, a semiconductor device comprises:
The device according to claim 4, further comprising a sealing resin for sealing the connection conductor from the back side of the insulated circuit board.

A semiconductor device according to the invention of claim 11 is:
The opening according to any one of claims 1 to 4, wherein the opening is formed in a desired shape including a circular shape, an elliptical shape, and a substantially rectangular shape.

According to a twelfth aspect of the present invention, there is provided a semiconductor device comprising:
5. The connection conductor according to claim 1, wherein the connection conductor is formed so as to be at least partially in contact with an inner surface of the opening, or is formed so as not to be in contact with the inner surface of the opening.

According to a thirteenth aspect of the present invention, there is provided a semiconductor device comprising:
13. The device according to claim 12, wherein a gap between the opening and the connection conductor is a gap or a non-conductive resin is provided.

According to a fourteenth aspect of the present invention, there is provided a semiconductor device comprising:
5. A non-conductive resin according to claim 1, wherein a non-conductive resin is provided between said semiconductor substrate and said insulated circuit board.

According to a fifteenth aspect of the present invention, there is provided a semiconductor device comprising:
5. The semiconductor device according to claim 1, wherein said semiconductor substrate and said insulated circuit board are fixed by said non-conductive resin.

According to a sixteenth aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising the steps of: connecting an insulating circuit substrate having a main surface and a back surface to a terminal electrode disposed between the main surface and the back surface or between the main surface and the back surface; Forming an opening to reach, and mounting the semiconductor substrate on the insulated circuit board such that the electrode pad and the opening correspond to the semiconductor substrate on which the electrode pad is formed; and Connecting the terminal electrode with a connection conductor passing through the opening.

According to a seventeenth aspect of the present invention, in the manufacturing method of the sixteenth aspect, a step of previously forming the connection conductor on an electrode pad of the semiconductor substrate; And installing a conductive resin on the insulated circuit board in advance.

According to a eighteenth aspect of the present invention, in the manufacturing method of the sixteenth aspect, a part of the connection conductor is formed in advance on an electrode pad of the semiconductor substrate, and The method includes a step of forming another part of the connection conductor in advance in the opening of the insulated circuit board, and a step of previously installing the non-conductive resin on the insulated circuit board.

According to a nineteenth aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising the steps of: forming a connecting conductor on an electrode pad of a semiconductor substrate; Providing an opening in the substrate, and mounting the semiconductor substrate on the insulated circuit board such that the connection conductor on the electrode pad is located in the opening on the main surface side of the insulated circuit board; The method includes a step of electrically connecting the connection conductor and the terminal electrode through the opening, and a step of resin-sealing the connection conductor and the terminal electrode from the back surface of the insulated circuit board.

According to a twentieth aspect of the present invention, in the manufacturing method of the sixteenth or nineteenth aspect, the connecting conductor on the electrode pad contacts an inner wall of the opening of the insulated circuit board. The semiconductor substrate is mounted on the insulated circuit board so as to be fixed.

According to a twenty-first aspect of the present invention, in the manufacturing method of the sixteenth or nineteenth aspect, the connecting conductor on the electrode pad does not contact the inner wall of the opening of the insulated circuit board. And mounting the semiconductor substrate on the insulated circuit board.

[0027]

Embodiments of the present invention will be described below in detail with reference to the drawings. In the drawings, the same or corresponding portions are denoted by the same reference characters, and description thereof will be simplified or omitted as appropriate. Embodiment 1 FIG. Hereinafter, a first embodiment of the present invention will be described in detail with reference to the drawings. FIGS. 1A to 1D are cross-sectional views showing the vicinity of a connection portion between a semiconductor substrate and an insulated circuit board in a semiconductor device according to a first embodiment of the present invention. FIG. 1E generally shows a conceptual diagram of a top view of the semiconductor device of FIGS. 1A to 1D. FIG. 1 (a)-
3D, reference numeral 3 denotes a semiconductor substrate, reference numeral 1 denotes an electrode pad of the semiconductor substrate 3, and reference numeral 7 denotes a protective insulating film of the semiconductor substrate 3. The protective film 7 includes, for example, a glass coat film 7a and a polyimide film 7
Although it is formed as a laminated film with b, it is not limited to such a configuration. Further, 11 is an insulated circuit board, 13 is a wiring layer of the insulated circuit board 11, 15 is a terminal electrode of the insulated circuit board 11, 17 is an external terminal electrode of the insulated circuit board 11, 19 is an external terminal, and 23 is an insulated circuit board 11 shows an opening (through hole in this example) provided at 11. Reference numeral 5 denotes a connection conductor provided in the through hole 23;
Is a non-conductive resin provided between the semiconductor substrate 3 and the insulated circuit board 11, and 30 indicates a semiconductor device including these.

As shown in FIG. 1A, in a semiconductor device 30 according to a first example of the present embodiment, an electrode pad 1 is provided on a surface of a semiconductor substrate 3, and a protective insulating film 7 is provided around the electrode pad 1.
Covered with. The insulated circuit board 11 has a wiring layer 13 on the front surface (main surface) facing the semiconductor substrate 3 and on the back surface (rear surface) on the opposite side. In addition, the semiconductor substrate 3
A through hole 23 is provided at a position corresponding to the electrode pad 1, and a terminal electrode 15 is formed at the bottom of the through hole 23, that is, on the back surface of the insulated circuit board 11. Such a semiconductor substrate 3 is mounted on the insulated circuit board 11, and the electrode pads 1 of the semiconductor substrate 3 and the terminal electrodes 15 of the insulated circuit board 11 are electrically connected via the connection conductor 5 provided in the through hole 23. are doing. Further, a non-conductive resin 9 is provided in a gap between the semiconductor substrate 3 and the insulated circuit board 11 and sealed.

As shown in FIG. 1A, in the semiconductor device 30, a terminal electrode 15 is provided on the opposite side (back surface) of the insulated circuit board 11 from the surface on which the semiconductor substrate 3 is mounted. A through hole 23 is provided in the insulated circuit board 11 at the position 15. The electrode pad 1 of the semiconductor substrate 3 and the terminal electrode 15 of the insulated circuit board 11 are connected by a connection conductor passing through the through hole 23. Thereby, the height of the connection conductor 5 can be ensured by the thickness of the insulating circuit board 11. at the same time,
It is possible to reduce the stress in the connection conductor 5 which is mainly caused by the thermal expansion mismatch between the semiconductor substrate 3 and the insulating circuit board 11. Note that the connection conductor 5 may be formed of a continuum of the same material, or may be configured such that a plurality of types of materials are added depending on the manufacturing method. That is, a laminated structure may be used. The connection between the connection conductor 5 and the terminal electrode 15 of the insulated circuit board 11 is not intended for heat radiation. Therefore,
The terminal electrode 15 connected to the connection conductor 5 is connected to the external terminal 19.
It does not need to be thermally conductively connected. Further, the terminal electrode 15 need not be exposed, and may be covered with a protective film or the like.

Further, as shown in FIG. 1A, in the semiconductor device 30, the wiring layers 13 are formed on the front and back two layers of the insulating circuit board 11, so that the wiring layers 1
3 degrees of freedom can be improved. Further, as shown at the left end of FIG. 1A, the semiconductor substrate 3 side (main surface) of the insulated circuit board 11
In addition, an external terminal electrode 17 is provided, and an external terminal 19 is connected through a through hole. Further, a non-conductive resin 9 is arranged between the semiconductor substrate 3 and the insulating circuit board 11. Thereby, the semiconductor substrate 3 and the insulated circuit board 1
The stress caused by the thermal expansion mismatch of No. 1 can be reduced.

Next, as shown in FIG. 1B, in the second example of the present embodiment, the insulating circuit board 11 is composed of a plurality of boards, Thus, the terminal electrode 15 is provided between the layers of the substrate. And
The insulated circuit board 11 has an opening (via hole in this case) 23 extending to the intermediate terminal electrode 15. Then, the electrode pads 1 of the semiconductor substrate 3 and the insulating circuit board 11
Is connected to the terminal electrode 15 at the intermediate position by the connection conductor 5 provided in the via hole 23. in this way,
Even when the insulated circuit board 11 is composed of two or more layers, the same operation and effect as in the case of FIG. 1A can be realized. That is, the present embodiment can be applied to the insulated circuit board 11 having a multilayer structure of two or more layers, and can reduce the stress generated in the connection conductor 5 for electrically connecting the semiconductor substrate 3 and the insulated circuit board 11. it can.

Next, as shown in FIG. 1C, in a third example of the present embodiment, the insulating circuit board 11 is composed of two layers, and the wiring layer 13 is formed on each surface. I have. A terminal electrode 15 is provided on the opposite side (back surface) of the insulated circuit board 11 from the semiconductor substrate 3 side, and a through hole 23 reaching the terminal electrode 15 is formed. The electrode pad 1 of the semiconductor substrate 3 and the electrode terminal 15 of the insulated circuit board 11 are electrically connected by the connection conductor 5 provided in the through hole 23. At this time, the wiring 13 of the intermediate layer of the insulated circuit board 11
Are also electrically connected to the connection conductor 5. That is, the two wiring layers of the insulated circuit board 11 are connected using the through holes 23. Even with such a structure, FIG.
The same operation and effect as the case shown in FIG.

Next, as shown in FIG. 1D, in a fourth example of the present embodiment, a connection through the through hole 23 of the insulated circuit board 11 as shown in FIG. Conductor 5
And a normal connection conductor 5 that does not penetrate through holes. The electrode pad 1 is mainly composed of Al (aluminum), and the periphery of the electrode pad 1 is covered with an insulating resin (PI). In the above embodiment, the gap between the inner surface of the through hole 23 and the connection conductor 5 may be an air gap or a non-conductive resin may be arranged. Moreover, the mixture may be sufficient. Further, the connection conductor 5 may be in contact with the inner surface of the through hole 23 only in a part. The stress exerted on the connection conductor 5 can be reduced as compared with the case where the connection conductor 5 fills and fixes the through hole 23.

Next, FIG. 1E is a plan view of the semiconductor device 30 of this embodiment as viewed from the back side of the insulated circuit board 11. Terminal electrodes 15 are arranged substantially on the center line of the insulated circuit board 11, and substrate electrodes 19 are arranged on both sides thereof.
Both are connected by a wiring 13. In the present embodiment, the insulated circuit board 11 may be a multi-layer insulated circuit board in which one or more boards each having a wiring layer 13 on both surfaces are laminated together with another board.

Next, a method of manufacturing the semiconductor device according to the first embodiment of the present invention will be described. FIGS. 2 (a) and 2 (b)
FIG. 5 is a diagram for explaining the method for manufacturing the semiconductor device according to the first embodiment of the present invention, which is a cross-sectional view near the connection between the semiconductor substrate and the insulating circuit substrate in the semiconductor device.

In the first example of the method of manufacturing a semiconductor device according to the present embodiment, as shown in FIG. 2A, the connection conductor 5 is formed only on the electrode pad 1 provided on the surface of the semiconductor substrate 3. Then, a non-conductive resin 9 is provided on the insulating circuit board 11 to fill a gap between the insulating circuit board 11 and the semiconductor substrate 3, and then heat-pressed so that the connection conductors 5 and the terminal electrodes 15 correspond to each other. I do. The arrow shown in the figure indicates the semiconductor substrate 3 from above.
Is pressed in the direction of the insulated circuit board 11. At this time, the connection conductor 5 is not joined to the wall surface of the through hole 23 of the insulated circuit board 11 but is joined to the terminal electrode 15. The connecting conductor 5 has a structure that is higher by the amount of the insulating circuit board 11 than in the case where there is no through hole 23.

Next, as shown in FIG. 2B, in the second example of the method of manufacturing a semiconductor device according to the present embodiment, the electrode pad 1 provided on the surface of the semiconductor substrate 3 and the insulating circuit The connection conductors 5 are respectively formed on the terminal electrodes 15 of the substrate 11, that is, in the through holes 23, and heat compression is performed so that both connection conductors 5 correspond with the nonconductive resin 9 interposed therebetween. Thereby, the electrode pad 1 and the terminal electrode 15
Are connected via the connection conductor 5. In addition, in such a manufacturing method, the material of the connection conductor 5 formed on each of the electrode pad 1 and the terminal electrode 15 can be changed.

Normally, as the pitch of the electrode pads 1 becomes narrower, the diameter of the connecting conductors 5 that can be formed on the electrode pads 1 on the semiconductor substrate 3 becomes smaller and the height thereof becomes smaller. In the present embodiment, one of the connection conductors 5 is also formed in advance in the through hole 23 of the insulated circuit board 11 and then crimped to the connection conductor 5 on the electrode pad 1 of the semiconductor substrate 3. The terminal electrode 15 is connected to the pad 1. Thereby, the height of the connecting conductor 5 can be secured, and the stability of the connection can be improved.

As a method of forming the connection conductor 5 on the electrode pad 1, bump stud bonding using eutectic solder, Au (gold), or the like, a film forming technique, or the like can be applied. Further, as a method of forming the through holes 23 in the insulated circuit board 11, laser processing or the like can be applied. As a technique for filling the gap between the insulating circuit board 11 and the semiconductor substrate 3, a technique of heating and pressing the non-conductive resin 9 supplied in the form of an epoxy resin film can be applied. Further, a multilayer thin film may be formed on at least one of the surfaces of the electrode pad 1 and the terminal electrode 15 in consideration of the bonding property of the connection conductor 5.

As described above, according to the first embodiment, the height of the connection conductor 5 can be increased by using the opening 23 (through hole or via hole) provided in the insulated circuit board 11. Further, by connecting the connection conductor 5 to the terminal electrode 15 on the back surface of the insulated circuit board 11 remote from the semiconductor substrate 3 via the opening 23, an increase in stress of the connection conductor 5 can be avoided. Also, through hole 2
By making the gap between the connection conductor 3 and the connection conductor 5 loose, the stress applied to the connection conductor 5 can be suppressed. On the other hand, when the wall surface of the through hole 23 is used as the bonding area, the bonding strength between the semiconductor substrate 3 and the insulating circuit substrate 11 can be increased. As a result, the connection reliability of the electrode pads 1 on the semiconductor substrate 3 to the insulated circuit board 11 can be improved. At the same time, the connection reliability between the insulated circuit board 11 and the electrode pads 1 on the semiconductor substrate 3 can be ensured even when the pitch of the electrode pads 1 is reduced due to the high integration of semiconductor devices.

Embodiment 2 Hereinafter, a second embodiment of the present invention will be described with reference to the drawings. 3 (a) to 3 (f)
Is a semiconductor device according to the second embodiment of the present invention.
It is sectional drawing of the vicinity of the connection part of a semiconductor substrate and an insulated circuit board. 3A to 3F, 3 is a semiconductor substrate, 1
Denotes an electrode pad of the semiconductor substrate 3, and 7 denotes a protective insulating film of the semiconductor substrate 3. The protective film 7 is, for example, a glass coat film 7a.
And a polyimide film 7b, but the invention is not limited to such a configuration. Also,
Reference numeral 11 denotes an insulated circuit board, 13 denotes a wiring layer of the insulated circuit board 11, 15 denotes a terminal electrode of the insulated circuit board 11, and 23 denotes an opening (through hole or via hole) provided in the insulated circuit board 11. Reference numeral 5 denotes a connection conductor provided in the opening 23, reference numeral 9 denotes a non-conductive resin filled between the semiconductor substrate 3 and the insulated circuit board 11, and reference numeral 30 denotes a semiconductor device including these.

As shown in FIG. 3A, in the semiconductor device 30 of the first example of the present embodiment, the terminal electrode 15 formed on the wall surface of the through hole 23 of the insulated circuit board 11 is Is connected to the electrode pad 1 via a connection conductor 5. Thereby, the joining area of the terminal electrode 15 can be increased, the height of the connecting conductor 5 can be increased, and the joining reliability can be improved.

Next, as shown in FIG. 3B, in the second embodiment of the present embodiment, the connection conductor 5 bonded to the electrode pad 1 of the semiconductor substrate 3 and the terminal electrode of the insulated circuit board 11 1
5 is formed of a different material from the connection conductor 5 joined to
The connecting conductor 5 as a whole may be formed in a form in which a plurality of types of materials are laminated and joined. Next, as shown in FIG. 3C, in a third example of the present embodiment, the terminal electrodes 15 of the insulated circuit board 11 are formed around the through holes 23 on the front and back surfaces of the insulated circuit board 11. However, it is not formed on the inner surface of the through hole 23. As described above, in consideration of productivity, a structure in which the wall surface of the through hole 23 is not used as a bonding area may be adopted.

In the structure shown in FIGS. 3A, 3B, and 3C, the semiconductor substrate 3 is mounted on the insulated circuit board 11 using only the connection conductor 5. That is, the semiconductor substrate 3 covered with the protective film 7 is in direct contact with the insulated circuit board 11, and no non-conductive resin is interposed therebetween. Also,
In the structure shown in FIGS. 3A and 3C, the semiconductor substrate 3
The fixing of the semiconductor substrate 3 and the insulating circuit board 11 may be performed by using a jig or by using the adhesion between the semiconductor substrate 3 and the insulating circuit board 11.

In the device structure shown in FIG. 3B, the semiconductor substrate 3 and the insulated circuit board are formed in the same manner as described above, or by using a projection (for example, the connection conductor 5) formed on the semiconductor substrate 3. 11 is fixed. In many cases, the semiconductor substrate 3 and the insulated circuit board 11 are fixed using the contact between the connection conductor 5 formed on the electrode pad 1 and the through hole 23.

Next, as shown in FIGS. 3D and 3E, in the fourth and fifth examples of the present embodiment, a non-conductive material is provided between the semiconductor substrate 3 and the insulated circuit board 11. The structure is filled with the conductive resin 9. In FIG. 3D, the terminal electrode 15 of the insulated circuit board 11 is provided on the inner surface of the through hole 23, and the through hole 23 penetrates. FIG.
In (e), the terminal electrode 15 is formed on the back surface of the insulated circuit board 11 so as to cover the bottom surface of the through hole 23.

Next, as shown in FIG. 3F, in the sixth example of the present embodiment, the insulating circuit board 11 is formed from a plurality of boards, and the terminal electrodes 15 and the wiring layers 13 are provided at intermediate positions. Is formed. Then, a via hole 23 reaching the terminal electrode 15 at the intermediate position is formed, and the connection conductor 5 is provided in the via hole 23 to connect the electrode pad 1 to the terminal electrode 15. In addition, the plurality of wiring layers 13 of the insulated circuit board 11 are connected to the connection conductors 5 by this. 3 (d) to 3 (f), the connection conductor 5 extends from the electrode pad 1 of the semiconductor substrate 3 to the terminal electrode 15 in the opening of the insulated circuit board 11. At the position of the non-conductive resin 9, it protrudes partly outside the extension of the opening and is securely fixed and connected to the connection conductor 5. Also,
In this case, the non-conductive resin 9 does not need to be a photosensitive resin, but may be a resin having general adhesive properties. In the present embodiment, the insulated circuit board 11 may be a multilayered insulated circuit board in which a board provided with the terminal electrodes 15 and another board are stacked.

Next, a method for manufacturing a semiconductor device according to the second embodiment of the present invention will be described. FIG. 4 is a cross-sectional view of the vicinity of a connection portion between a semiconductor substrate and an insulated circuit board for describing a method of manufacturing a semiconductor device according to a second embodiment of the present invention. In the drawing, the arrow in the left-hand drawing indicates that the semiconductor substrate 3 is pressed toward the insulated circuit board 11.
The middle arrows in the left and right diagrams indicate that the process proceeds from the left state to the right state.

As shown in FIG. 4A, in the first example of the method for manufacturing a semiconductor device according to the second embodiment of the present invention, the electrode pad 1 provided on the surface of the semiconductor By positioning the through-holes 11 and the terminal electrodes 15 so as to correspond to each other, and inserting the connection conductor 5 into the through-holes 23, FIG.
Has been realized.

Next, as shown in FIG. 4B, in the second example of the manufacturing method of the present embodiment, the connection conductor 5 is bonded on the electrode pad 1 on the surface of the semiconductor substrate 3. After positioning the connection conductor 5 so as to correspond to the through hole 23 of the insulating circuit board 11, the connection conductor 5 is inserted into the through hole 23. Thus, the connection conductor 5 and the terminal electrode 15 are joined, and the semiconductor substrate 3 and the insulated circuit board 11 are fixed, thereby realizing the device structure shown in FIG.

Next, as shown in FIG. 4C, in the third example of the manufacturing method according to the present embodiment, the connection conductor 5 is bonded on the electrode pad 1 on the surface of the semiconductor substrate 3. After positioning the connection conductor 5 and the through hole 23 of the insulating circuit board 11, the connection conductor 5 is inserted into the through hole 23 and is brought into contact with the terminal electrode 15 on the bottom surface of the through hole 23. Thereby, the connection conductor 5 and the terminal electrode 15 are joined. Further, the semiconductor substrate 3 and the insulating circuit board 11
A non-conductive resin is filled in between them, and the semiconductor substrate 3 and the insulated circuit board 11 are fixed, thereby realizing the device structure shown in FIG.

Next, as shown in FIG. 4D, in the fourth example of the manufacturing method of the present embodiment, the connection conductor 5 is bonded on the electrode pad 1 on the surface of the semiconductor substrate 3. on the other hand,
Non-conductive resin 9 (film) is placed on the insulating circuit board 11
I will put. After positioning the connection conductor 5 so as to correspond to the through hole 23 of the insulated circuit board 11, the connection conductor 5 is brought into contact with the position of the through hole 23 of the non-conductive resin 9, heated and pressed. Thus, the connection between the connection conductor 5 and the terminal electrode 15 is achieved, and the semiconductor substrate 3 and the insulated circuit board 11 are fixed, thereby realizing the device structure shown in FIG.

Next, as shown in FIG. 4E, in the fifth example of the manufacturing method of the present embodiment, the connection conductor 5 is bonded onto the electrode pad 1 provided on the surface of the semiconductor substrate 3. Keep it. On the other hand, the non-conductive resin 9
(Film). After positioning the connection conductor 5 so as to correspond to the through hole 23 of the insulated circuit board 11, the connection conductor 5 is brought into contact with the position of the through hole 23 of the non-conductive resin 9, heated and pressed. in this case,
If the amount of the connection conductor 5 is reduced, the connection conductor 5 will not fill the entire through hole 23. Then, another connecting conductor 5 is inserted into the through hole 23 from the opposite side of the insulated circuit board 11 and joined to the connecting conductor 5 on the semiconductor substrate 3 side. Thereby, the connection conductor 5 and the electrode terminal 15 are joined. Further, the semiconductor substrate 3 and the insulating circuit board 11 are fixed by the non-conductive resin 9. In this case, two different materials may be used for the connection conductor 5.

In the manufacturing method of the present embodiment, a method in which the connecting conductor 5 is provided in the through hole 23 in advance is also possible. According to the above-described method, etching at a position corresponding to the through-hole 23 of the non-conductive resin 9 is omitted, and the non-conductive resin 9 can be manufactured relatively easily. In the above embodiment, the gap between the inner surface of the through hole 23 and the connection conductor 5 may be an air gap or a non-conductive resin may be arranged. Moreover, the mixture may be sufficient. Further, the connection conductor 5 may be in contact with the inner surface of the through hole 23 only in a part. The stress exerted on the connection conductor 5 can be reduced as compared with the case where the connection conductor 5 fills and fixes the through hole 23.

Embodiment 3 Hereinafter, a third embodiment of the present invention will be described with reference to the drawings. 5 (a) to 5 (c)
FIG. 13 is a cross-sectional view near a connection portion between a semiconductor substrate and an insulated circuit board in a semiconductor device according to a third embodiment of the present invention. 5A to 5C, 3 is a semiconductor substrate, 1 is an electrode pad of the semiconductor substrate 3, and 7 is a semiconductor substrate 3.
3 shows a protective insulating film. The protective film 7 is formed, for example, as a laminated film of a glass coat film 7a and a polyimide film 7b, but is not limited to such a configuration. Reference numeral 11 denotes an insulated circuit board; 23, an opening provided in the insulated circuit board 11 (in this case, a through hole); 2 shows the terminal electrodes of the insulated circuit board 11 arranged in FIG. Further, 5a is a connection conductor joined to the electrode pad 1, 5c is a connection conductor joined to the connection conductor 5a, 5b is a connection conductor 5a or 5c and the terminal electrode 1
5 and 5a, 5b, and 5c. The connection conductor 5b
Is connected to the terminal electrode 15 near the opening 23 over the wiring 13. Reference numeral 9 denotes a non-conductive resin filled between the semiconductor substrate 3 and the insulating circuit board 11, and reference numeral 21 denotes a sealing resin that fills the through holes 23 and seals the connection conductors 5a and 5b and the terminal electrodes 15. , 30 indicate semiconductor devices including these.

As shown in FIG. 5A, in the semiconductor device 30 of the first embodiment of the present embodiment, the connecting conductor 5a is joined on the electrode pad 1 of the semiconductor substrate 3, and the insulating circuit board 11 It faces the position of the through hole 23. The insulated circuit board 11 includes the terminal electrode 15 near the through hole 23 on the side opposite to the side on which the semiconductor substrate 3 is mounted, that is, on the surface (back surface) farther from the semiconductor substrate 3. Then, the non-conductive resin 9 is applied to the semiconductor substrate 3 and the insulating circuit board 1.
1 and the two are fixed. The connection conductor 5a and the terminal electrode 15 are connected to the through-hole 23 through the flexible connection conductor 5b, and the connection conductors 5a and 5b and the terminal electrode 15 are sealed with the sealing resin 21. Thereby, the electrode pads 1 to the connection conductors 5a, 5
The bonding reliability between the terminal b and the terminal electrode 15 can be improved.
Further, by optimizing the connection conductor 5b by changing the length, the design of the wiring layer 13 in the insulated circuit board 11 becomes easy.

Next, as shown in FIG. 5B, in the semiconductor device 30 of the second example of the present embodiment, the through holes 23
Then, an intermediate connecting member 5c is inserted between and connected to the connecting conductor 5a through the flexible connecting conductor 5b.
The other parts are the same as those in FIG.

Next, as shown in FIG. 5C, the semiconductor device 30 of the third example of the present embodiment has a structure similar to that of FIG. The non-conductive resin 9 filled between 11 and the sealing resin 21 for sealing the connection conductors 5a to 5c are integrally formed. This is a structure in which the semiconductor substrate 3 and the insulating circuit board 11 are temporarily fixed, and the space between the semiconductor substrate 3 and the insulating circuit board 11 is fixed by filling the sealing resin 21. With such a structure, the same operation and effect as those of FIGS. 2A and 2B can be obtained.

Next, a method of manufacturing a semiconductor device according to the third embodiment of the present invention will be described. FIG. 6 is a cross-sectional view of the vicinity of a connection portion between a semiconductor substrate and an insulated circuit board for describing a method of manufacturing a semiconductor device according to a third embodiment of the present invention. In the drawing, the arrow in the left-hand drawing indicates that the semiconductor substrate 3 is pressed toward the insulated circuit board 11.
The middle arrows in the left and right diagrams indicate that the process proceeds from the left state to the right state.

As shown in FIG. 6A, in the first example of the method of manufacturing a semiconductor device according to the present embodiment, first, the connection conductor 5a is joined to the electrode pad 1 on the semiconductor substrate 3. The connecting conductor 5a is connected to the through-hole 23 of the insulated circuit board 11.
The connection conductor 5 is inserted from the semiconductor substrate 3 side into the non-conductive resin 9 placed on the insulated circuit board 11 and penetrated therethrough.
Is mounted on the insulated circuit board 11. Then, the flexible connection conductor 5b is connected to the connection conductor 5a via the connection member 5c.
And the other end is electrically connected to the terminal electrode 15. Thereafter, the connection conductors 5a, 5b, 5c are sealed with the sealing resin 21 to realize the device structure shown in FIG. 5B.

In this manufacturing method, specifically, after positioning the insulated circuit board 11 and the semiconductor substrate 3, the wire-shaped connecting conductor 5 b is connected to the connecting conductor 5 b in the through hole 23 of the insulated circuit board 11. 5a is a method of wire bonding. Thereby, the one having the shape shown in FIG. 5A can be manufactured. If a massive member such as the connection member 5c is formed in the bonding portion depending on the method of wire bonding, the bonding becomes strong. Further, after positioning the insulating circuit board 11 and the semiconductor substrate 3, the connecting conductor 5c is placed on the connecting conductor 5a over the insulating circuit board 11.
After the formation, the connection conductor 5b may be connected to the connection conductor 5c from the back of the insulated circuit board 11. With this manufacturing method, the one having the shape shown in FIG. 5B can be manufactured.

As shown in FIG. 6B, in the second example of the method of manufacturing a semiconductor device according to the present embodiment, the connection conductor 5 formed on the electrode pad 1 on the semiconductor substrate 3 is connected to an insulating circuit. The semiconductor substrate 3 and the insulating circuit board 1 are positioned so as to correspond to the through holes 23 of the substrate 11, and the connection conductors 5 are inserted into the through holes 23 from the semiconductor substrate 3 side.
1 is temporarily fixed. Then, the flexible connection conductor 5b is connected to the connection conductor 5a using the connection member 5c, and the other end is connected to the terminal electrode 15. Thereafter, the space between the semiconductor substrate 3 and the insulated circuit board 11 is filled with the non-conductive resin 21 through the through hole 23, and the connection conductors 5a, 5b, 5c are sealed, thereby obtaining the structure shown in FIG.
Has been realized. According to the manufacturing method of this embodiment described above, wire bonding or the like is performed not on the pad electrode 1 but on the connection conductor 5a or 5c bonded on the pad electrode 1 in the through hole 23. Since the connection conductors 5b may be connected by any method, the connection work is facilitated. Therefore, the connection work is easy even if the diameter of the through hole 23 is small.

In the present embodiment, as a method for holding the semiconductor substrate 3 and the insulating circuit board 11, a method of filling the non-conductive resin 9 between the semiconductor substrate 3 and the insulating circuit board 11 or a jig is used. For example, a method using the adhesive force between the semiconductor substrate 3 and the insulating circuit substrate 11, such as a method using a protrusion formed on the semiconductor substrate 3, can be used. In the method using the protrusions formed on the semiconductor substrate 3, in many cases, the contact between the connection conductor 5 formed on the electrode pad 1 of the semiconductor substrate 3 and the through hole 23 is used.

Embodiment 4 Hereinafter, a fourth embodiment of the present invention will be described with reference to the drawings. FIGS. 7A to 7D
FIG. 13 is a sectional view showing a relationship between an insulating circuit board and a connecting conductor in a semiconductor device according to a fourth embodiment of the present invention. FIGS. 7A to 7D are cross-sectional views of the vicinity of the through hole 23 taken along a plane parallel to the insulated circuit board 11. FIGS. 7A and 7B show the presence or absence of contact between the through hole 23 and the connection conductor 5. FIGS. 7C and 7D show the relationship between the shape of the through hole 23 and the size of the connection conductor 5. 7A to 7D, reference numeral 5 denotes a connection conductor, 11 denotes an insulated circuit board, 23 denotes a through hole, and 24 denotes a gap between the through hole 23 and the connection conductor 5 or a non-conductive member provided in the gap. 2 shows a conductive resin.

As shown in FIG. 7A, in the first example of the present embodiment, the connecting conductor 5 is partially in contact with the inner surface of the through hole 23, specifically, at four points. When the contact portion exists as described above, the semiconductor substrate 3 and the insulating circuit board 11 can be held in the process by using the contact between the connection conductor 5 and the insulating circuit board 11.

Next, as shown in FIG. 7B, in the second example of this embodiment, the diameter of the connecting conductor 5 is
3, the connecting conductor 5 is not in contact with the inner surface of the through hole 23. When there is no contact portion as described above, the semiconductor substrate 3 and the insulating circuit board 11 are held in the process by using an adhesion force using a projection portion or the like between the two or a fixing method using a jig. As in this example, when the connecting conductor 5 is not in contact with the through-hole 23, the connecting conductor 5 does not receive the binding force of the through-hole 23, and there is an advantage that the stress concentration point can be eliminated. Note that the gap between the through hole 23 and the connection conductor 5 may be an air gap or may be filled with a non-conductive resin. The elasticity can prevent the connection conductor 5 from being stressed.

Next, as shown in FIG. 7C, in the third example of the present embodiment, the shape of the through hole 23 is elongated in the direction in which the pitch of the connecting conductors 5 is wide. The planar shape of the through hole 23 determines the restraining force in the immediate vicinity of the connection conductor 5. When the connection conductor 5 spreads over the terminal electrode 15 in the through hole 23, the area of the through hole 23 is increased to some extent in the direction in which the pitch is wide in order to increase the bonding area. In addition, the direction in which the through hole 23 is lengthened may be a direction in which the thermal stress applied to the connection conductor 5 is reduced. As in this example, the stress applied to the connection conductor 5 can be reduced when the connection conductor 5 does not contact the inner surface of the through hole 23 but contacts the sealing resin 21.

Next, as shown in FIG. 7D, in the fourth example of the present embodiment, the shape of the through-hole 23 is elongated so that two connection conductors 5 are connected to one through-hole 23. Through it. Thus, when the pitch of the connecting conductors 5 is narrow, two or more connecting conductors 5 may be connected through one through hole 23. Thereby, even if the through hole 23 is formed in the isolated electrode pad 1,
Alternatively, a shape that can flexibly cope with a plurality of electrode pads 1 in close proximity can be used. In the above example, the case where the cross-sectional shape of the through-hole 23 is a circle and a rectangle is shown. However, the cross-sectional shape can be selected to a desired shape such as a square or an ellipse as needed. As described above, the relationship between the through hole 23 and the connection conductor 5 described in the present embodiment can be applied to the semiconductor devices of the first to third embodiments as necessary.

It should be noted that the present invention is not limited to the above embodiments, and it is clear that each embodiment can be appropriately changed within the scope of the technical idea of the present invention. Further, the number, position, shape, and the like of the constituent members are not limited to the above-described embodiment, and can be set to numbers, positions, shapes, and the like suitable for carrying out the present invention.

[0070]

The present invention is configured as described above.
When the semiconductor substrate 3 is mounted on the insulated circuit board 11, the connection conductor 5 is connected through a through hole 23 to a terminal electrode formed on the surface of the insulated circuit board 11 opposite to the side on which the semiconductor substrate 3 is mounted. Thereby, the height of the connection conductor can be increased by utilizing the through hole. Also,
Since the through holes are used, an increase in stress of the connecting conductor can be avoided. In addition, by setting the wall surface of the through hole as the bonding area, the bonding strength between the semiconductor substrate and the insulating circuit substrate can be increased. As a result, the connection reliability of the electrode pads on the semiconductor substrate to the insulated circuit board can be improved. Also,
Even when the pitch of the electrode pads is reduced with the increase in the degree of integration of the semiconductor device, the connection reliability of the electrode pads on the semiconductor substrate with respect to the insulating circuit substrate can be ensured.

[Brief description of the drawings]

FIG. 1 is a sectional view of the vicinity of a connection portion between a semiconductor substrate and an insulated circuit board in a semiconductor device according to a first embodiment of the present invention;

FIG. 2 is a cross-sectional view of the vicinity of a connection portion between the semiconductor substrate and the insulated circuit board for explaining the method of manufacturing the semiconductor device according to the first embodiment of the present invention;

FIG. 3 is a cross-sectional view of the vicinity of a connection portion between a semiconductor substrate and an insulated circuit board in a semiconductor device according to a second embodiment of the present invention;

FIG. 4 is a sectional view of the vicinity of a connection portion between a semiconductor substrate and an insulated circuit board for describing a method of manufacturing a semiconductor device according to a second embodiment of the present invention;

FIG. 5 is a sectional view of the vicinity of a connection portion between a semiconductor substrate and an insulated circuit board in a semiconductor device according to a third embodiment of the present invention;

FIG. 6 is a sectional view of the vicinity of a connection portion between a semiconductor substrate and an insulated circuit board for describing a method of manufacturing a semiconductor device according to a third embodiment of the present invention.

FIG. 7 is a top view of the vicinity of a through hole cut by a plane parallel to the insulated circuit board of the semiconductor device according to the fourth embodiment of the present invention;

FIG. 8 is a sectional view of the vicinity of a connection portion between the semiconductor substrate and the insulating circuit board in a conventional semiconductor device in which the semiconductor substrate is mounted on the insulating circuit board.

[Explanation of symbols]

1 electrode pad, 3 semiconductor substrate, 5, 5a, 5
b, 5c connection conductor, 7 protective insulating film, 9 non-conductive resin, 11 insulated circuit board, 13 wiring layer, 1
5 terminal electrode, 17 external terminal electrode, 19 external terminal, 21 sealing resin, 23 opening (through hole or via hole), 25 base metal film for connection, 30
Semiconductor device, 31 bump (eutectic solder).

Claims (21)

[Claims] A semiconductor substrate on which an electrode pad is formed, a main surface and a back surface, wherein the main surface is arranged to face the electrode pad of the semiconductor substrate, and the main surface is located at a position corresponding to the electrode pad. An insulated circuit board having a terminal electrode formed between the surface and the back surface or on the back surface, and an opening extending from the main surface to the terminal electrode; and an electrode pad of the semiconductor substrate passing through the opening and the insulating substrate. A connection conductor for connecting a terminal electrode of a circuit board to the semiconductor device. 2. A semiconductor substrate having an electrode pad formed thereon, a main surface and a back surface, wherein the main surface is arranged to face the electrode pad of the semiconductor substrate, and an opening is formed at a position corresponding to the electrode pad. An insulating circuit board formed with a terminal electrode formed on an inner wall surface of the opening; and a connection conductor passing through the opening and connecting between an electrode pad of the semiconductor substrate and a terminal electrode of the insulating circuit board. A semiconductor device comprising: 3. A semiconductor substrate having an electrode pad formed thereon, a main surface and a back surface, wherein the main surface is disposed to face the electrode pad of the semiconductor substrate, and an opening is formed at a position corresponding to the electrode pad. Formed, at a plane intermediate between the main surface and the back surface,
Or an insulated circuit board in which a terminal electrode is formed around the opening in contact with the opening on a back surface, and between the electrode pad of the semiconductor substrate and the terminal electrode of the insulated circuit board passing through the opening. And a connection conductor for connecting the semiconductor device. 4. A semiconductor substrate having an electrode pad formed thereon, a main surface and a back surface, wherein the main surface is arranged to face the electrode pad of the semiconductor substrate, and an opening is formed at a position corresponding to the electrode pad. An insulated circuit board formed with a terminal electrode near the opening on the back surface; and a connection passing through the opening to connect between an electrode pad of the semiconductor substrate and a terminal electrode of the insulated circuit board. And a conductor for use in the semiconductor device. 5. The insulated circuit board according to claim 1, further comprising two or more wiring layers in a main surface, a back surface, or an intermediate layer between the main surface and the back surface. 13. A semiconductor device according to claim 1. 6. The semiconductor device according to claim 5, wherein two or more wiring layers of the main surface or the intermediate layer are electrically connected to the connection conductor at the opening. 7. The semiconductor device according to claim 1, wherein said connection conductor is formed of a continuum of the same material. 8. The semiconductor device according to claim 1, wherein said connection conductor is formed by laminating two or more kinds of materials. 9. The semiconductor device according to claim 1, wherein the connection conductor is a lump-shaped first conductor portion bonded to an electrode pad of the semiconductor substrate, and a linear first conductor portion extending from the first conductive portion to a terminal electrode of the insulated circuit board. 5. The semiconductor device according to claim 4, comprising two conductor portions. 10. The semiconductor device according to claim 4, further comprising a sealing resin for sealing the connection conductor from the back side of the insulated circuit board. 11. The semiconductor device according to claim 1, wherein said opening has a desired cross-sectional shape including a circle, an ellipse, and a substantially quadrangle. 12. The connection conductor according to claim 1, wherein the connection conductor is formed so as to be at least partially in contact with an inner surface of the opening, or is formed so as not to be in contact with the inner surface of the opening. 3. The semiconductor device according to claim 1. 13. The semiconductor device according to claim 12, wherein a gap between the opening and the connection conductor is a gap or a non-conductive resin is provided. 14. The semiconductor device according to claim 1, wherein a non-conductive resin is provided between said semiconductor substrate and said insulated circuit board. 15. The semiconductor device according to claim 1, wherein said semiconductor substrate and said insulated circuit board are fixed by said non-conductive resin. 16. A step of forming an opening from a main surface side to a rear surface or a terminal electrode disposed between the main surface and the rear surface in an insulated circuit board having a main surface and a back surface, and forming an electrode pad. Mounting the semiconductor substrate on the insulated circuit board such that the electrode pad and the opening correspond to each other, and connecting the electrode pad and the terminal electrode with a connection conductor passing through the opening. Connecting the semiconductor device to the semiconductor device. 17. The method according to claim 16, wherein the connecting conductor is previously formed on an electrode pad of the semiconductor substrate, and the non-conductive resin is previously provided on the insulating circuit board. And a method of manufacturing a semiconductor device. 18. The method according to claim 16, wherein a part of the connection conductor is previously formed on an electrode pad of the semiconductor substrate, and another part of the connection conductor is previously formed in the insulating circuit. A method for manufacturing a semiconductor device, comprising: a step of forming the non-conductive resin in an opening of a substrate; and a step of previously installing the non-conductive resin on the insulated circuit board. 19. A step of forming a connection conductor on an electrode pad of a semiconductor substrate, a step of providing an opening in an insulated circuit board having a main surface and a back surface and having a terminal electrode on the back surface, Mounting the semiconductor substrate on the insulated circuit board such that the connection conductor is located in the opening on the main surface side of the insulated circuit board; and connecting the connection conductor and the terminal electrode to the opening. A method of manufacturing a semiconductor device, comprising the steps of: electrically connecting the terminal and the terminal electrode via the back surface of the insulated circuit board; 20. The insulating circuit board according to claim 16, wherein the connecting substrate on the electrode pad is fixed in contact with an inner wall of an opening of the insulating circuit board. A method of manufacturing a semiconductor device, wherein the method is mounted on a semiconductor device. 21. The method according to claim 16, wherein the semiconductor substrate is mounted on the insulated circuit board such that a connection conductor on the electrode pad does not contact an inner wall of an opening of the insulated circuit board. A method for manufacturing a semiconductor device, comprising: