JP2001297944A - Thin film laminate, capacitor, and methods and devices for manufacturing them - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a capacitor composed of a thin film laminated formed by alterna tively laminating thin metallic films and thin resin films upon another and which can prevent the exposure of the thin metallic films on the cut surfaces of the laminate as much as possible, by avoiding the cutting of the thin metallic films as much as possible at the time of manufacturing the capacitor. SOLUTION: At the time of alternately laminating thin resin films 12 and thin metallic films 11a and 11b upon another, the metallic films 11a and 11b are formed in such a way that the films 11a and 11b are retreated from the peripheral edges of the resin films 12. Through holes 13a and 13b are made through the laminated body in the laminating direction and respectively filled with conductive materials 14a and 14b which are respectively connected electrically to the metallic films 11a and 11b. Since the metallic films 11a and 11b are not exposed on the outer periphery of the laminated body, the films 11a and 11b hardly corrode. In addition, the cutting of the films 11a and 11b can be avoided in the manufacturing process of the capacitor. Moreover, the capacitor can be mounted at high density, because the capacitor can be connected by using the conductive materials 14a and 14b packed in the through holes 13a and 13b.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a thin film laminate in which a resin thin film and a metal thin film are laminated, and a capacitor using the same.
And a production method and a production apparatus suitable for the production thereof.

[0002]

2. Description of the Related Art A process of laminating a resin thin film and a process of laminating a metal thin film are defined as a unit, and are repeated on a circling support to form a thin film lamination in which the resin thin film and the metal thin film are alternately laminated. The method of manufacturing the body, and the method of obtaining an electronic component such as a capacitor from the obtained thin film laminate,
For example, it is known in Japanese Patent Application Laid-Open No. Hei 10-237623.

An example of a method for manufacturing a thin film laminate of a resin thin film and a metal thin film will be described with reference to the drawings.

FIG. 15 is a cross-sectional view schematically showing an example of a manufacturing apparatus for carrying out a conventional method of manufacturing a thin film laminate.

In FIG. 15, reference numeral 915 denotes a vacuum chamber;
Is a vacuum pump that maintains the inside of the vacuum chamber 915 at a predetermined degree of vacuum, 911 is a cylindrical can roller installed in the vacuum chamber 915 and rotates in the direction of the arrow in the drawing, 912 is a resin thin film forming apparatus, and 913 is Patterning material applying device, 9
14 is a metal thin film forming device, 917 is a patterning material removing device, 918 is a resin curing device, 919 is a surface treatment device, 920a and 920b are partitions for distinguishing a metal thin film forming region from other regions, and 922 is a partition 920a, 920
An opening 923 provided in b is a shielding plate for closing the opening 922 in order to prevent a metal thin film from being formed when it is not necessary.

[0006] The resin thin film forming apparatus 912 heats or vaporizes or atomizes a resin material for forming a resin thin film and discharges the resin material toward the outer peripheral surface of the can roller 911. Since the can roller 911 is cooled to a predetermined temperature, the resin material is cooled and deposited on the outer peripheral surface of the can roller 911 in a film form.

[0007] The deposited resin material is irradiated with an electron beam or an ultraviolet ray by a resin curing device 918 as required to be cured to a desired hardness.

Next, the formed resin thin film is subjected to an oxygen plasma treatment or the like by a surface treatment device 919 as necessary, so that the surface of the resin thin film is activated.

The patterning material applying device 913 is a device for patterning the metal thin film into a predetermined shape by forming a margin portion in the metal thin film by a method called an oil patterning method. If a thin metal film is formed by vapor deposition after forming a thin patterning material in advance on a resin thin film, the thin metal film is not formed on the patterning material, and a margin portion is formed. The metal thin film thus formed is formed in a state where the patterning portion is removed, and a metal thin film having a desired pattern can be formed. The patterning material is vaporized in the patterning material applying device 913, and is discharged from a fine hole formed at a predetermined position toward the outer peripheral surface of the can roller 911. A plurality of fine holes are usually arranged at predetermined intervals substantially in parallel with the rotation axis direction of the can roller 911. As a result, a patterning material is thinly applied to the surface on which the metal thin film is to be formed in advance in a plurality of strips. For example, a fluorine-based oil is used as the patterning material.

Thereafter, a metal thin film is formed by a metal thin film forming apparatus 914 by vapor deposition or the like.

Thereafter, a patterning material removing device 917 is provided.
As a result, excess patterning material is removed.

According to the manufacturing apparatus 900 described above, the shielding plate 9
When the opening 922 is opened with the 23 retracted, the resin thin film formed by the resin thin film forming device 912 and the metal thin film formed by the metal thin film forming device 914 are alternately stacked on the outer peripheral surface of the rotating can roller 911. In a state where the body is manufactured and the shielding plate 923 covers the opening 922, a laminated body in which the resin thin film is continuously laminated by the resin thin film forming apparatus 912 on the outer peripheral surface of the rotating can roller 911 is manufactured. You. Further, by moving the patterning material applying device 913 in a direction parallel to the rotation axis of the can roller 911 (for example, reciprocating) in synchronization with the rotation of the can roller 911, it is possible to form metal thin films having different pattern positions.

In this way, a cylindrical multilayer laminate composed of a metal thin film and a resin thin film is formed on the outer peripheral surface of the can roller 911, and then the laminate is cut in the radial direction and removed from the can roller 911. By performing flat plate pressing, a laminated mother element 930 as shown in FIG. 16, for example, can be obtained. In FIG. 16, 931 is a metal thin film, 9
32 is a resin thin film, 933 is a margin portion (a region where a metal thin film is not formed), and an arrow 938 matches the running direction of the outer peripheral surface of the can roller 911. Laminated body element 93 of FIG.
0 is the layer 936a and the layer 935 on the can roller 911.
a, a layer 934, a layer 935b, and a layer 936b. Here, layers 936a and 936b
Is a layer in which the shielding plate 923 is closed and only the resin thin film is continuously laminated, and the layer 934 and the layers 935a and 935b
32 are alternately stacked. In addition, the layer 934 is
Each time the can roller 911 makes one rotation, the patterning material attachment position is changed and stacked.

By cutting the laminated body element 930 at, for example, cut surfaces 939a and 939b and forming external electrodes on the cut surface 939a, a number of chip capacitors 940 as shown in FIG. 17 can be obtained. In FIG. 17, reference numerals 941a and 941b denote external electrodes formed to be electrically connected to the metal thin film 931.

The capacitor obtained by the above-described method can be a small-sized and large-capacity capacitor because the thickness of the resin thin film serving as the dielectric layer can be extremely reduced.

[0016]

However, the production of electronic components such as capacitors by the above method has the following problems.

First, the laminated body element 930 is cut along a cut surface 939.
When cutting at a, 939b, the metal thin film 931 is always cut. Cutting is performed by shearing using, for example, a blade. At this time, burrs and chips of the metal thin film 931 are generated on the cut surface. These may short-circuit upper and lower metal thin films sandwiching the resin thin film. This causes a decrease in withstand voltage and insulation resistance of the obtained capacitor.

Further, in order to cut a metal thin film, a much larger cutting force is required than when cutting a resin thin film. Therefore, if the cutting conditions are not appropriate, the laminate may be deformed near the cut surface due to the cutting of the metal thin film, or the metal thin film may be pulled and the metal thin film may be broken inside the laminate. The deformation of the outer shape of the laminate, when used as an electronic component, reduces the mountability when mounted on a circuit board. In addition, the fracture of the metal thin film inside the laminate is
The characteristics of the electronic component are deteriorated, and the yield is reduced.

Further, cutting the metal thin film means that the metal thin film is exposed on the cut surface. When the metal thin film is exposed on the cut surface, corrosion such as oxidation and rust of the metal thin film proceeds from the cut surface. When the metal thin film functioning as an electrode is corroded, the reliability of the obtained electronic component is significantly reduced.
In order to prevent this, it is necessary to perform exterior processing such as resin coating on the cut surface, which leads to an increase in the number of steps and an increase in cost.

In the capacitor shown in FIG. 17, one chip constitutes one capacitor element. Therefore, when it is necessary to mount multiple capacitors on a circuit board, etc.
A capacitor corresponding to the number is required, which hinders a reduction in mounting area and increases the number of steps. In order to drive the semiconductor chip at high speed, it is effective to shorten the connection circuit length between the semiconductor chip and the peripheral elements. However, if a large number of capacitors are mounted, the circuit length will inevitably increase, and the signal processing speed will increase. Hinder the transformation.

It is an object of the present invention to provide a thin film laminate and a capacitor in which the above-mentioned conventional problems have been solved, and a method and an apparatus for manufacturing the same. That is, an object of the present invention is to provide a thin film laminate, a capacitor, and a method and a device for manufacturing the same, in which cutting of the metal thin film is avoided as much as possible and the metal thin film is not exposed to the cut surface as much as possible. Also, an array capacitor that includes a plurality of capacitors in one element and is easy to combine with other elements,
And a manufacturing method and a manufacturing apparatus thereof.

[0022]

The present invention has the following configuration to achieve the above object.

The first thin film laminate of the present invention is a thin film laminate in which a plurality of resin thin films and a plurality of metal thin films are laminated, and an end of the metal thin film is exposed outside the thin film laminate. At least one layer of the resin thin film has a through hole in a stacking direction, and the upper and lower metal thin films are electrically connected via the through hole, and at least one layer of the metal thin film is The electrode can be taken out to the outside through the through hole.

According to the first thin film laminate, since the end of the metal thin film is not exposed to the outside of the thin film laminate, corrosion of the metal thin film hardly occurs. Further, since the metal thin film is not cut in the manufacturing process, it is possible to suppress problems that occur when cutting the metal thin film, such as burrs and chips of the metal thin film, breakage of the metal thin film, and deformation of the thin film laminate. . Further, since the metal thin film can be taken out of the electrode to the outside through the through hole, a thin film laminate usable as an electronic component can be provided.

Further, the second thin film laminate of the present invention is a thin film laminate in which a plurality of resin thin films and a plurality of metal thin films are laminated, wherein at least one layer of the resin thin film is formed in a part of the periphery. It has a notch, and the upper and lower metal thin films are electrically connected via the notch, and at least one layer of the metal thin film is capable of extracting an electrode to the outside through the notch. It is characterized by the following.

According to the second thin film laminate, since the metal thin film can be taken out of the electrode through the cutout portion, a thin film laminate usable as an electronic component can be provided.

In the second thin-film laminate, the resin thin film has a substantially rectangular shape, and the metal thin film is formed to recede on a side of the resin thin film other than the side where the cutout portion is formed. Is preferred. According to such a preferred configuration, since the end of the metal thin film is formed to be recessed from the end of the resin thin film, the amount of the metal thin film exposed to the outside of the thin film laminate can be reduced. Therefore, corrosion of the metal thin film is unlikely to occur. In addition, since the cutting of the metal thin film can be reduced in the manufacturing process, it is possible to suppress the problems that occur when cutting the metal thin film, for example, the occurrence of burrs and chips from the metal thin film, the breakage of the metal thin film, and the deformation of the thin film laminate.

Next, a first capacitor according to the present invention is a capacitor using a thin film laminate in which a plurality of resin thin films and a plurality of metal thin films are stacked, and an end of the metal thin film is formed of the thin film. Not exposed to the outside of the laminate, at least one layer of the resin thin film has a through hole in the laminating direction, and is electrically connected so that every other layer of the metal thin film has the same potential through the through hole. And the metal thin film connected to the same potential can be taken out of the electrode through the through hole.

According to the first capacitor, since the end of the metal thin film is not exposed to the outside of the thin film laminate, corrosion of the metal thin film and the like hardly occur. Further, since the metal thin film is not cut in the manufacturing process, it is possible to suppress problems that occur when cutting the metal thin film, such as burrs and chips of the metal thin film, breakage of the metal thin film, and deformation of the thin film laminate. . Further, since the metal thin films connected every other layer can be electrically connected to the outside, they function as capacitors using a resin thin film as a dielectric layer. In addition, since the electrodes are taken out through the through holes formed in the resin thin film, the mounting area when mounting the substrate can be reduced, and high-density mounting becomes possible.

Further, a second capacitor of the present invention is a capacitor using a thin film laminate in which a plurality of resin thin films and a plurality of metal thin films are stacked, and at least one layer of the resin thin film has a peripheral layer. The metal thin film has a notch in a part thereof, and is electrically connected to the metal thin film via the notch every other layer so as to have the same potential. It is characterized in that the electrode can be taken out to the outside through the notch.

According to the second capacitor, since the metal thin film connected every other layer can be electrically connected to the outside, it functions as a capacitor using a resin thin film as a dielectric layer. Further, since the electrodes are taken out through the cutouts formed in the resin thin film, the mounting area when mounting the substrate can be reduced, and high-density mounting is possible.

[0032] In the second capacitor, the resin thin film is substantially rectangular, and the metal thin film is formed to recede on a side of the resin thin film other than the side on which the cutout portion is formed. Is preferred. According to such a preferred configuration, since the end of the metal thin film is formed to be recessed from the end of the resin thin film, the amount of the metal thin film exposed to the outside of the thin film laminate can be reduced. Therefore, corrosion of the metal thin film is unlikely to occur. In addition, since the cutting of the metal thin film can be reduced in the manufacturing process, it is possible to suppress the problems that occur when cutting the metal thin film, for example, the occurrence of burrs and chips from the metal thin film, the breakage of the metal thin film, and the deformation of the thin film laminate.

Next, a first method for producing a thin film laminate according to the present invention is a method for producing a thin film laminate in which a resin thin film and a metal thin film are alternately laminated, wherein the metal thin film is formed of the resin thin film. Forming a smaller area of the resin thin film in the formation area of the metal thin film and changing the formation position of the metal thin film every time one metal thin film is formed, and alternately laminating the resin thin film and the metal thin film. Forming a through hole penetrating the resin thin film and the metal thin film, filling the through hole with a conductive material, and electrically connecting at least a part of the metal thin film to the conductive material. And a step of performing

In a second method of manufacturing a thin film laminate according to the present invention, a step of forming a resin thin film, a step of forming a metal thin film, and a step of forming a through hole passing through the resin thin film and the metal thin film at a predetermined position. Forming a thin film laminate in which the resin thin film and the metal thin film are alternately stacked by repeatedly performing this on a support, wherein the metal thin film is formed of the resin thin film. In the formation area, the formation area is smaller than the formation area of the resin thin film, the formation position of the metal thin film is changed every time one metal thin film is formed, and the through holes are formed continuously in the stacking direction. The continuous through holes are filled with a conductive material, and at least a part of the metal thin film is electrically connected to the conductive material.

In a third method of manufacturing a thin film laminate according to the present invention, a step of forming a resin thin film, a step of forming a through hole in the resin thin film, and a step of forming a metal thin film on the resin thin film As a unit, and by repeatedly performing this on a support, the resin thin film and the metal thin film are alternately stacked, whereby the metal thin film is formed in an area where the resin thin film is formed. Forming a smaller area than the resin thin film, changing a formation position of the metal thin film every time one metal thin film is formed, and forming the through hole in a region where the metal thin film is formed. Thereby, the plurality of metal thin films in the stacking direction are electrically connected via the through holes.

According to the first to third manufacturing methods, the thin film laminate of the present invention can be manufactured efficiently.

Next, in a first method of manufacturing a capacitor according to the present invention, a metal thin film is formed in a resin thin film forming area to be smaller than the resin thin film forming area, and the metal thin film forming position is set to the metal thin film forming position. A step of alternately laminating a resin thin film and a metal thin film, forming a through hole penetrating the resin thin film and the metal thin film, and forming a conductive material in the through hole. And electrically connecting every other layer of the metal thin film.

In a second method of manufacturing a capacitor according to the present invention, a step of laminating a resin thin film, a step of forming a metal thin film, and forming a through hole passing through the resin thin film and the metal thin film at a predetermined position. And a step as a unit, wherein the method is repeated on a support, wherein the metal thin film is formed in an area where the resin thin film is formed, and is smaller than an area where the resin thin film is formed. The formation position of the thin film is changed every time one metal thin film is formed,
Further, the through holes are formed continuously in the laminating direction, and the continuous through holes are filled with a conductive material to electrically connect the metal thin films every other layer.

In a third method of manufacturing a capacitor according to the present invention, the step of forming a resin thin film, the step of forming a through hole in the resin thin film, and the step of forming a metal thin film on the resin thin film are performed. A method of manufacturing a capacitor in which a unit is formed as a unit and the same is repeatedly performed on a support, wherein the metal thin film is formed in a region where the resin thin film is formed to be smaller than the formation area of the resin thin film, and the formation of the metal thin film is performed. The position is changed every time one metal thin film is formed, and the through hole is formed in a region where the metal thin film is formed, so that the metal thin film is electrically connected every other layer through the through hole. Is connected to.

According to the first to third manufacturing methods, the capacitor of the present invention can be manufactured efficiently.

Next, a first apparatus for producing a thin film laminate according to the present invention comprises a circulating support, a metal thin film forming apparatus and a resin thin film forming apparatus arranged opposite to the support, and these are housed. And a laser patterning device for processing a metal thin film on the downstream side of the metal thin film forming device and on the upstream side of the resin thin film forming device. And

According to the first manufacturing apparatus, a metal thin film having a desired margin can be easily obtained. Therefore, by using this manufacturing apparatus, the thin film laminate of the present invention can be efficiently manufactured.

The second apparatus for manufacturing a thin film laminate according to the present invention comprises a circulating support, a metal thin film forming apparatus and a resin thin film forming apparatus arranged opposite to the support, and accommodates them. A manufacturing apparatus for a thin film laminate having a vacuum chamber, further comprising: a laser processing apparatus for forming a hole in the stacking direction; and a downstream side of the resin thin film forming apparatus, wherein the metal thin film forming apparatus An oil application device for applying oil to the resin thin film is provided on the upstream side.

According to the second manufacturing apparatus, the through-hole (and the second through-hole) penetrating the resin thin film (and the metal thin film) can be processed by using the laser processing apparatus for processing a hole. Further, a metal thin film having a desired margin portion can be obtained by the oil applying device. Therefore, by using this manufacturing apparatus, the thin film laminate of the present invention can be efficiently manufactured.

A third apparatus for manufacturing a thin film laminate according to the present invention comprises a circulating support, a metal thin film forming apparatus and a resin thin film forming apparatus arranged opposite to the support, and accommodates these. An apparatus for manufacturing a thin film laminate having a vacuum chamber, comprising: an oil application device that applies oil to the resin thin film on the downstream side of the resin thin film formation device and on the upstream side of the metal thin film formation device. The oil applicator has a pair of nozzles in which micro holes are arranged.

According to the third manufacturing apparatus, a metal thin film having a desired margin can be obtained by the oil applying apparatus. In particular, since the oil application device includes a pair of nozzles or more, each of the nozzles can be independently moved to easily obtain a metal thin film having a substantially lattice-shaped margin portion. Therefore, by using this manufacturing apparatus, the thin film laminate of the present invention can be efficiently manufactured.

The fourth apparatus for manufacturing a thin film laminate according to the present invention comprises a circulating support, a metal thin film forming apparatus and a resin thin film forming apparatus arranged opposite to the support, and accommodates these. A manufacturing apparatus for a thin film laminate having a vacuum chamber, further comprising: a laser processing apparatus for forming a hole in the stacking direction; and a downstream side of the resin thin film forming apparatus, wherein the metal thin film forming apparatus An oil application device for applying oil to the resin thin film on the upstream side, and a laser patterning device for processing the metal thin film on the downstream side of the metal thin film forming device and on the upstream side of the resin thin film forming device. It is characterized by.

According to the fourth manufacturing apparatus, the through-hole (and the second through-hole) penetrating the resin thin film (and the metal thin film) can be processed by using the laser processing apparatus for processing a hole. Further, by including the oil applying device and the laser patterning device, a metal thin film having a desired margin can be obtained. Therefore, by using this manufacturing apparatus, the thin film laminate of the present invention can be efficiently manufactured.

[0049]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below with reference to the drawings.

A. Regarding the thin film laminate and the capacitor, embodiments of the thin film laminate and the capacitor of the present invention will be described.

(Embodiment A-1) FIG. 1 shows a schematic configuration of a chip capacitor using a thin film laminate according to Embodiment A-1 of the present invention, and FIG. 1 (B) is a right side view, FIG. 1 (C) is a plan view, FIG. 1 (D) is a cross-sectional view taken along the line DD of FIG. 1 (A), and FIG. FIG. 2E is a cross-sectional view taken along the line EE in FIG. The figure schematically shows a laminated structure, and various dimensions, the number of laminated layers, and the like are significantly different from those of an actual laminated body.

In the thin film laminate 10 of the present embodiment, metal thin films 11a and 11b having different formation positions are alternately laminated.
The resin thin film 12 is provided between the metal thin film 11a and the metal thin film 11b.
Are laminated. The region where the metal thin films 11a and 11b are formed is smaller than the region where the resin thin film 12 is formed, and the ends of the metal thin films 11a and 11b are not exposed to the outer peripheral surface of the thin film laminate 10. 2 penetrating in the laminating direction of the thin film laminate 10
Two through holes 13a and 13b are formed apart from each other. In relation to the metal thin film, one of the through holes 13a is the metal thin film 11
a, and the other through-hole 13b is formed in the metal film layer 11b.
Only penetrates. Both through holes 13a and 13b are filled with conductive materials 14a and 14b. Conductive material 14a
Is electrically connected to the metal thin film 11a,
Is insulated from The conductive material 14b is made of the metal thin film 11
b and is electrically insulated from the metal thin film 11a.

Thus, when the conductive materials 14a and 14b exposed on the upper surface or the lower surface of the thin film laminate 10 are used as electrode extraction portions (extraction electrodes) and different potentials are applied to the respective portions, the metal thin films 11a and 11b are used as electrodes and the resin Thin film 1
A capacitor having 2 as a dielectric layer can be formed.

The conductive materials 14a, 14 exposed on the outer surface
An electrode terminal (projection (bump) electrode) made of gold, silver, aluminum, copper, solder, conductive paste, conductive polymer, or the like may be formed on b.

FIG. 2 is a schematic side view showing a state where the capacitor 10 shown in FIG. 1 is mounted on a circuit board 17. Conductive materials 14a, 14 filled in through holes 13a, 13b
The electrode terminal 15 formed on the substrate b is connected to the electrode terminal 19 on the circuit board 17. In the case of the conventional chip capacitor 940 shown in FIG. 17, since the electrodes 941a and 941b are formed on the side surfaces, a mounting area larger than a projected area from above the chip capacitor 940 is required. However, in the case of the capacitor of the present embodiment, since the extraction electrode is formed on the lower surface, the required mounting area can be substantially equal to the projected area from above the capacitor 10. Therefore, higher-density mounting becomes possible.

In FIG. 2, the electrode terminals 15 are formed on the conductive materials 14a and 14b, and the electrode terminals 15 and the circuit board 17 are formed.
Although the upper electrode terminals 19 are connected, the conductive materials 14 a and 14 b may be directly connected to the electrode terminals 19 on the circuit board 17 without providing the electrode terminals 15.

In FIG. 1, a through hole 13 penetrating in the laminating direction is provided.
a and 13b are filled with conductive materials 14a and 14b so that electrodes can be taken out from any of the upper and lower surfaces. However, a non-conductive electrode formed from only one of the upper and lower surfaces without penetrating the holes 13a and 13b. By forming a through-hole and filling it with a conductive material, a capacitor having an extraction electrode formed on only one side may be used.

In FIG. 1, a thin film laminate for a capacitor has been described as an example. However, it can be used for applications other than a capacitor, for example, a coil, a noise filter, a laminated circuit board, and the like. In this case, the lamination structure and the connection form between the metal thin film and the extraction electrode can be changed depending on the use.

(Embodiment A-2) FIG. 3 shows a schematic configuration of a chip capacitor using a thin film laminate according to an embodiment A-2 of the present invention, and FIG. 3 (B) is a right side view, FIG. 3 (C) is a bottom view, FIG. 3 (D) is a cross-sectional view taken along the line DD of FIG. 3 (A), and FIG. FIG. 3E is a cross-sectional view taken along the line EE in FIG. The figure schematically shows a laminated structure, and various dimensions, the number of laminated layers, and the like are significantly different from those of an actual laminated body.

In the thin film laminate 20 of the present embodiment, metal thin films 21a and 21b having different formation positions are alternately laminated.
A resin thin film 22 between the metal thin film 21a and the metal thin film 21b
Are laminated. The regions where the metal thin films 21a and 21b are formed are smaller than the regions where the resin thin films 22 are formed, and the ends of the metal thin films 21a and 21b are not exposed to the outer peripheral surface of the thin film laminate 20. Two through holes 23a, 23b penetrating in the laminating direction are formed in each resin thin film 22 at a distance. The through hole 23a is formed in the region where the metal thin film 21a is formed and outside the region where the metal thin film 21b is formed.
The metal thin films 21a stacked vertically are electrically connected via the material of the metal thin film 21a filled in the inside 3a. The through hole 23b is formed in the formation region of the metal thin film 21b and outside the formation region of the metal thin film 21a.
The metal thin films 21b stacked vertically are electrically connected via the material of the metal thin film 21b filled in 3b. Thereby, the metal thin film 21a and the metal thin film 21b are insulated. Through hole 2 below lowermost metal thin film 21a, 21b
3a and 23b are filled with the same material as the material of the metal thin films 21a and 21b. Uppermost metal thin film 21a, 21
In the through holes 23a and 23b above b, conductive materials 24a and 24b are filled as necessary.

Thus, the material of the metal thin films 21a and 21b in the through holes 23a and 23b on the lower surface of the thin film laminate 20 or the conductive materials 24a and 24b in the through holes 23a and 23b on the upper surface of the thin film laminate 20 is taken out of the electrode extraction portion. (Extraction electrode)
When different potentials are applied to each, the metal thin film 2
A capacitor having the electrodes 1a and 21b as electrodes and the resin thin film 22 as a dielectric layer can be formed.

Gold, silver, aluminum, copper, solder, conductive paste, conductive polymer, etc. are placed on the metal thin film material and / or conductive material 24a, 24b in the through holes 23a, 23b exposed on the outer surface. Electrode terminals (bumps)
Electrodes).

The capacitor of the present embodiment can be mounted as shown in FIG. 2 similarly to the embodiment A-1, and high-density mounting becomes possible.

In FIG. 3, the through holes 23 penetrating in the laminating direction are shown.
a and 23b are provided so that the electrodes can be taken out from any of the upper and lower surfaces. However, the holes 23a and 23b do not penetrate to the upper surface (that is, the resin layers on the uppermost metal thin films 21a and 21b are not formed). It is also possible to use a capacitor in which the extraction electrode is formed only on the lower surface without providing a through-hole).

In FIG. 3, a thin film laminate for a capacitor has been described as an example. However, the present invention can be used for applications other than a capacitor, for example, a coil, a noise filter, a laminated circuit board, and the like. In this case, the lamination structure and the connection form between the metal thin film and the extraction electrode can be changed depending on the use.

(Embodiment A-3) FIG. 4A is a plan view showing a schematic configuration of a capacitor (array capacitor) according to Embodiment A-3, and FIG. 4B is a plan view of FIG. FIG. 4 is a side view showing an example in which a capacitor is mounted on a circuit board.

As shown in FIG. 4A, the array capacitor 30 is configured by arranging capacitor elements 36 independently functioning as capacitors in the vertical and horizontal directions at lattice points. Each capacitor element 36 is provided in the embodiment A-1 or A-
2 has a configuration similar to that of the capacitor described in 2. That is, each capacitor element 36 includes a resin thin film and a metal thin film 31a, 3a.
1b are alternately stacked. Each metal thin film 31
a and 31b are connected to a pair of extraction electrodes 35a and 35b, respectively.

In the region where the capacitor element 36 is not formed, a through electrode 37 is formed as necessary. The through electrode 37 is
A conductive material 39 is filled in a through hole (second through hole) 38 penetrating the array capacitor 30 in the thickness direction. The through electrode 37 is insulated from the metal thin films 31a and 31b constituting the capacitor element 36.

An electrode terminal (projection (bump) electrode) made of gold, silver, aluminum, copper, solder, conductive paste, conductive polymer, or the like is formed on the extraction electrodes 35 a and 35 b and the through electrode 37. Is also good.

FIG. 4B shows a mounting example. Circuit board 41
The array capacitor 30 and the carrier 46 on which the semiconductor chip 45 is mounted are stacked thereon. An electrode terminal 42 on the circuit board 41 is connected to an electrode terminal 35 ′ formed on an extraction electrode of the capacitor element 36 of the array capacitor 30.
Connected to Further, the other electrode terminals 42 of the circuit board 41
Is connected to the electrode terminal 37 ′ formed on the through electrode 37 of the array capacitor 30, is connected to the electrode terminal 47 of the carrier 46 via the through electrode 37, and is further connected to the semiconductor chip 45.

As described above, when an array capacitor is formed by separating a plurality of capacitor elements 36 on the same surface, the mounting area can be reduced as compared with a case where separate and independent capacitors are arranged. Also, the mounting process can be simplified. Furthermore, even if a plurality of capacitor elements are integrated in one element, mutual interference between the capacitor elements hardly occurs because the electrodes (metal thin films) constituting the individual capacitor elements are independent, and floating occurs. The capacity is hardly generated.

Further, the through electrode 3 is provided in the array capacitor.
When 7 is formed, another electronic component (the semiconductor chip 45 in the above example) is mounted on the array capacitor, and the substrate 41 and the electronic component can be electrically connected via the through electrode 37. As a result, in addition to reducing the mounting area, the capacitor can be arranged in the vicinity of the mounted electronic component, so that the electronic component can be driven at a high frequency.

Further, the semiconductor integrated circuit 40 can be constructed by housing the array capacitor 30, the carrier 46, and the semiconductor chip 45 mounted thereon in one package. According to the semiconductor integrated circuit 40, a semiconductor component for exhibiting a predetermined function can be handled as one unit, and a mounting process can be simplified as compared with a case where semiconductor components are individually mounted.

Further, in a multilayer wiring board in which a plurality of insulating substrates are laminated via a predetermined wiring pattern layer and each wiring pattern layer is connected via via holes formed in the thickness direction of the insulating substrate, The array capacitor 30 can be used as a part of an insulating substrate having a via hole. According to this configuration, the capacitor element and the like can be housed in the multilayer wiring board, and the mounting area can be greatly reduced and the mounting process can be simplified as compared with the case where the capacitor and the like are mounted on the substrate surface.

(Embodiment A-4) FIG. 5 shows a schematic configuration of a chip capacitor using a thin film laminate according to Embodiment A-4 of the present invention, and FIG. 5 (B) is a right side view, FIG. 5 (C) is a plan view, FIG. 5 (D) is a cross-sectional view taken along the line DD of FIG. 5 (A), and FIG. FIG. 5E is a cross-sectional view taken along a line EE in FIG. 5A. The figure schematically shows a laminated structure, and various dimensions, the number of laminated layers, and the like are significantly different from those of an actual laminated body.

In the thin film laminate 50 of the present embodiment, metal thin films 51a and 51b having different formation positions are alternately laminated.
A resin thin film 52 is provided between the metal thin film 51a and the metal thin film 51b.
Are laminated. 2 of the peripheral surface of the thin film laminate 50
Notch portions 53a and 53b that are continuous in the laminating direction are formed at locations at intervals. In FIG. 5, the notch 53
a and 53b are formed in a substantially semi-cylindrical shape on two opposing side surfaces. In relation to the metal thin film, one cutout 53a cuts out only the metal thin film 51a, and the other cutout 53b cuts out only the metal film layer 51b. Conductive materials 54a, 54 are provided in both cutouts 53a, 53b.
b is filled. The conductive material 54a is a metal thin film 51.
a and is insulated from the metal thin film 51b. The conductive material 54b is electrically connected to the metal thin film 51b and is insulated from the metal thin film 51a. The metal thin films 51a and 51b are formed in an area smaller than the area where the resin thin film 52 is formed so that the metal thin films 51a and 51b are not exposed on the other two sides except for the two side faces where the cutout portions 53a and 53b are formed. ing.

Thus, the notch 5 of the thin film laminate 50
The conductive materials 54a and 54b exposed on the two side surfaces and the upper and lower surfaces on which the 3a and 53b are formed are used as electrode extraction portions (extraction electrodes), and when different potentials are applied to the respective portions, the metal thin films 51a and 51b are used as electrodes and the resin thin film A capacitor using 52 as a dielectric layer can be formed.

The capacitor of the present embodiment can be further downsized if it has the same capacitance as the capacitor of the embodiment A-1.

The conductive material 54 exposed on the upper, lower, and side surfaces
a, 54b, gold, silver, aluminum, copper, solder,
An electrode terminal (projection (bump) electrode) made of a conductive paste, a conductive polymer, or the like may be formed.

FIG. 6 is a schematic side view showing a state in which the capacitor 50 shown in FIG. 5 is mounted on a circuit board 57.

FIG. 6A shows the notches 53a and 53b.
A case is shown in which the electrode terminals 55 formed on the conductive materials 54a and 54b filled in are connected to the electrode terminals 59 on the circuit board 57. When the capacitor of the present embodiment is mounted as shown in FIG. 6A, the mounting area can be reduced as compared with the case where the conventional chip capacitor 940 shown in FIG. 17 is mounted. Compared with the case where the capacitor of the form A-1 is mounted, the mounting area can be further reduced, and high-density mounting is possible.

FIG. 6B shows that the capacitor 50 is directly installed on the circuit board 57 without forming the electrode terminal 55, and the conductive materials 54a and 54b
Is connected to an electrode terminal 59 disposed in the vicinity of the terminal using a conductive material 58 such as solder. By employing such a mounting method, the mounting height can be reduced. Further, since the conductive material 58 is adhered to the side surface of the capacitor 50, even if the conductive material 58 is poorly adhered to the capacitor 50 during mounting, it can be easily corrected.

In FIG. 6A, the conductive materials 54a, 54a
The electrode terminal 55 is formed on the substrate b, and the electrode terminal 55 and the electrode terminal 59 on the circuit board 57 are connected.
May be directly connected to the conductive materials 54 a and 54 b and the electrode terminals 59 on the circuit board 57.

In FIG. 5, notches 53a, 53b formed to penetrate in the laminating direction are provided with conductive materials 54a, 5b.
4b, the electrodes can be taken out from any of the upper and lower surfaces and the two opposing side surfaces. However, the non-penetrating holes formed only from one of the upper and lower surfaces without penetrating the cutouts 53a and 53b. By forming a cutout portion and filling the cutout portion with a conductive material, a capacitor having only one of the formation surfaces of the extraction electrode in the vertical direction may be used.

In FIG. 5, a thin film laminate for a capacitor has been described as an example. However, the present invention can be used for applications other than a capacitor, such as a coil, a noise filter, and a laminated circuit board. In this case, the lamination structure and the connection form between the metal thin film and the extraction electrode can be changed depending on the use.

The positions where the notches 53a and 53b are formed are not limited to the example shown in FIG. For example, instead of being formed on two opposing side surfaces, they may be formed on two of the four corners.

(Embodiment A-5) FIG. 7 shows a schematic configuration of a chip capacitor using a thin film laminate according to Embodiment A-5 of the present invention, and FIG. 7 (B) is a right side view, FIG. 7 (C) is a bottom view, FIG. 7 (D) is a cross-sectional view taken along the line DD of FIG. 7 (A), and FIG. FIG. 7E is a cross-sectional view taken along a line EE in FIG. 7A. The figure schematically shows a laminated structure, and various dimensions, the number of laminated layers, and the like are significantly different from those of an actual laminated body.

In the thin film laminate 60 of the present embodiment, metal thin films 61a and 61b having different formation positions are alternately laminated.
A resin thin film 62 is provided between the metal thin film 61a and the metal thin film 61b.
Are laminated. 2 of the peripheral surface of each resin thin film 62
Notches 63a, 63b continuous in the laminating direction
Are formed apart from each other. In FIG. 7, the notch 63
a and 63b are formed in a substantially semi-cylindrical shape on two opposing sides. The notch 63a is formed within the region where the metal thin film 61a is formed and outside the region where the metal thin film 61b is formed, and is vertically stacked via the material of the metal thin film 61a filled in the notch 63a. The thin film 61a is electrically connected. The notch 63b is formed by the metal thin film 61.
b is formed within the formation region of the metal thin film 61a and outside the formation region of the metal thin film 61a, and is stacked vertically through the material of the metal thin film 61b filled in the cutout portion 63b.
Are electrically connected. Thereby, the metal thin film 61a and the metal thin film 61b are insulated. Lowermost metal thin film 61
The notches 63a and 63b below the a and 61b are filled with the same material as the material of the metal thin films 61a and 61b.
Notch 63 on top of metal thin films 61a and 61b
a and 63b are provided with conductive materials 64a and 64b as necessary.
b is filled. Except for the two side surfaces on which the notched portions 63a and 63b are formed, the other two side surfaces have metal thin films 61a and 61b.
The metal thin films 61a and 61b are formed in an area smaller than the area where the resin thin film 62 is formed so that the metal thin film 61 is not exposed.

Thus, the metal thin film material or the conductive material 64a, 64b exposed on the two side surfaces and the upper and lower surfaces where the cutout portions 63a, 63b are formed are used as electrode extraction portions (extraction electrodes), and different potentials are applied to the respective portions. In addition, a capacitor using the metal thin films 61a and 61b as electrodes and the resin thin film 62 as a dielectric layer can be configured.

Notch portions 63a, 63 exposed on the outer surface
b) the metal thin film material and / or the conductive material 64a, 64
An electrode terminal (projection (bump) electrode) made of gold, silver, aluminum, copper, solder, conductive paste, conductive polymer, or the like may be formed on b.

The capacitor of the present embodiment can be mounted as shown in FIG. 6 similarly to Embodiment A-4, and the same effect can be obtained.

In FIG. 7, the uppermost metal thin film 61a, 61
Although notches 63a and 63b are also formed on the upper surface b and the conductive materials 64a and 64b are filled and the electrodes can be taken out from the upper surface, the notches on the uppermost metal thin films 61a and 61b are formed. May not be required.

In FIG. 7, a thin film laminate for a capacitor has been described as an example. However, the present invention can be used for applications other than a capacitor, for example, a coil, a noise filter, a laminated circuit board, and the like. In this case, the lamination structure and the connection form between the metal thin film and the extraction electrode can be changed depending on the use.

The positions at which the notches 63a and 63b are formed are not limited to the example shown in FIG. For example, instead of being formed on two opposing side surfaces, they may be formed on two of the four corners.

B. Next, a method and an apparatus for manufacturing the thin film laminate and the capacitor described in the above section A will be described.

The basic steps of manufacturing the thin film laminate and the capacitor of the present invention include a step of alternately laminating a resin thin film and a metal thin film on a support (alternate laminating step), and a step of laminating the resulting laminate (lamination). (A cutting element) at a predetermined position in the stacking direction (cutting / separating step).

The metal thin film laminated in the alternate laminating step is patterned into a predetermined shape. For patterning a metal thin film, an oil patterning method of applying oil to a predetermined shape before laminating the metal thin film, or a laser patterning method of irradiating a laser beam to the metal thin film laminated after the metal thin film is laminated to remove the metal thin film material Or a combination of the two.

The formation of the through holes 13a and 13b and the filling of the conductive materials 14a and 14b shown in the embodiment A-1 (FIG. 1), the notch 5 shown in the embodiment A-4 (FIG. 5)
3a and 53b, filling with conductive materials 54a and 54b, and the through electrode 3 shown in Embodiment A-3 (FIG. 4).
The formation of 7 can be achieved by forming a hole in the stacking direction with a laser beam or the like after the completion of the above-described alternate stacking step and before the start of the cutting and separating step, and then filling the hole with a conductive material. Alternatively, in the alternate lamination process, the resin thin film and / or
Or, each time a metal thin film is laminated, irradiate a laser beam or the like to remove the resin thin film and the metal thin film at a predetermined position, form a continuous hole in the laminating direction, and after the alternate laminating step, in the obtained through hole, It may be filled with a conductive material.

Further, the through holes 23a, 23 penetrating the resin thin films 21a, 21b shown in the embodiment A-2 (FIG. 3)
b, notches 63a and 63b formed in resin thin films 61a and 62b shown in Embodiment A-5 (FIG. 7)
Is formed in the alternate lamination step, after laminating the resin thin film, and before laminating the metal thin film, forming a through hole in the resin thin film by removing only a predetermined position of the newly laminated resin thin film by a laser beam or the like, Then, by laminating the metal thin films, the upper and lower metal thin films can be connected to each other through the through holes.

A plurality of embodiments of the manufacturing method and the manufacturing apparatus of the present invention are possible by selecting and combining the above various methods. Hereinafter, typical embodiments will be exemplified.

(Embodiment B-1) FIG. 8 is a schematic sectional view showing an example of a manufacturing apparatus for carrying out a method of manufacturing a thin film laminate according to an embodiment B-1 of the present invention. In this embodiment, the metal thin film is patterned by an oil patterning method, and the through holes or cutouts are formed using a laser processing device after the completion of the alternate lamination process.

In FIG. 8, reference numeral 100 denotes a manufacturing apparatus according to the present embodiment; 115, a vacuum tank; 116, a vacuum pump for maintaining the inside of the vacuum tank 115 at a predetermined degree of vacuum;
Reference numeral 112 denotes a cylindrical can roller that is installed in the rotary member 15 and rotates in the direction of an arrow 111a in the figure. Reference numeral 112 denotes a resin thin film forming device; 130a and 130b denote patterning material applying devices (nozzles); 117 is a patterning material removing device, 118 is a resin curing device, 119 is a surface treatment device, 120 is a partition for distinguishing a metal thin film formation region from other regions, and 121 is an opening provided in the partition 120. , 123 are moved in the moving directions 123 to prevent the metal thin film from being formed when not necessary.
a shielding plate that moves in the direction of a to open and close the opening 121;
5 is a laser processing device, and 127 is a plasma irradiation device.

By rotating the can roller 111, a thin film laminated body in which a resin thin film formed by the resin thin film forming device 112 and a metal thin film formed by the metal thin film forming device 114 are alternately formed on the outer peripheral surface of the can roller 111. it can.

At this time, the patterning oil is applied in a predetermined shape to the surface of the resin thin film before forming the metal thin film using the pair of patterning material applying devices 130a and 130b, so that the metal thin film patterned into an arbitrary shape can be obtained. Can be formed.

The basic structures of the patterning material applying device 130a and the patterning material applying device 130b are the same. FIG. 9 shows a patterning material applying device (nozzle) 130.
a and 130b show a schematic configuration. FIG. 9A is a front view seen from the can roller 111 side, and FIG.
FIG. 7 is a sectional view taken along line BB of FIG. Arrow 11 in FIG.
1b indicates the moving direction of the outer peripheral surface of the can roller 111.

Patterning material applying devices 130a, 13
0b is a patterning material (oil) 137 in a liquid state
And a cavity 133 for holding a vaporized patterning material. Storage tank 134
And the cavity 133 are connected by a connection path 135. On the opposing surface 132 facing the can roller 111 side,
A plurality (five in FIG. 9) of fine holes 131 connected to the cavity 133 are formed. The plurality of micro holes 131 are
They are arranged at equal intervals at a predetermined distance substantially in parallel with the moving direction 111b of the can roller 111. The patterning material applying apparatuses 130a and 130b are heated to a temperature equal to or higher than the vaporization temperature of the patterning material (oil) 137, and the patterning material 137 in the storage tank 134 is vaporized, moves to the cavity 133, and moves from the micro holes 131 to the can roller 1.
11 is emitted toward the outer peripheral surface of the substrate. The released patterning material liquefies on the outer peripheral surface of the can roller 111,
A liquid film of the patterning material is formed.

In the manufacturing apparatus of this embodiment shown in FIG.
A pair of patterning material applying devices 130a, 130b
Are reciprocated in a direction substantially parallel to the rotation axis direction of the can roller 111 (in a direction substantially perpendicular to the moving direction 111b of the outer peripheral surface of the can roller 111). Then, a plurality of stripes of the patterning material formed on the outer peripheral surface of the can roller 111 by the patterning material applying device 130a, and a plurality of patterning materials formed on the outer peripheral surface of the can roller 111 by the patterning material applying device 130b. Cross with the stripe.

FIG. 10 is a developed view of an example of a stripe pattern of the patterning material formed on the outer peripheral surface of the can roller 111 by the pair of patterning material applying devices 130a and 130b. The arrow 111b indicates the moving direction of the outer peripheral surface of the can roller 111. The solid line 138a is
The five patterning material stripes formed on the outer peripheral surface of the can roller 111 by the patterning material applying device 130a are shown. The dotted line 138b indicates the five stripes formed on the outer peripheral surface of the can roller 111 by the patterning material applying device 130b. 1 shows a patterning material stripe. As shown, the pair of patterning material applying devices 130a and 130b are
By reciprocating while synchronizing at a predetermined speed substantially in parallel with the rotation axis direction of the rotation shaft 11, a lattice-shaped application pattern of a patterning material can be formed on the outer peripheral surface of the can roller 111. In particular, the patterning material applying device 130
Assuming that the moving speeds of the a and 130b are substantially the same as the moving speed of the outer peripheral surface of the can roller 111, the angle formed between the stripe formed by each of the patterning material applying devices 130a and 130b and the moving direction 111b is approximately 45 degrees. Can be. As a result, it is possible to obtain a lattice-shaped application pattern in which the stripes 138a and 138b are substantially orthogonal.

After that, when the metal thin film is formed by the metal thin film forming apparatus 114, the metal thin film is not formed in the portion where the patterning material is applied, so that a rectangular metal thin film patterned in a lattice can be formed. .

Further, the formation position of the lattice pattern formed after one rotation of the can roller 111 is preferably parallel to one of the stripes 138a and 138b so that the formation position of the lattice pattern is not the same as the previous formation position of the lattice pattern. The movement of the patterning material applying devices 130a and 130b is controlled so as to be formed at a position shifted by a predetermined amount. In addition, the formation position of the lattice-shaped pattern formed after one more rotation does not coincide with the previous formation position, but the pattern formation material applying devices 130a and 130b are adjusted so as to coincide with the formation position two times before. Control movement. In this way, two types of metal thin films in which the grid-like margin pattern is shifted by a predetermined amount can be alternately stacked via the resin thin film. Further, the pattern position of the metal thin film sandwiching the resin thin film is shifted so as to have a predetermined facing portion. The facing portion forms a capacitance forming region of the capacitor.

The laser processing device 125 includes the can roller 1
The laser beam is applied to the outer peripheral surface of the laser beam 11. The laser processing device 125 is provided with a scanning device (not shown). Can be irradiated. In the present embodiment, after alternately laminating a resin thin film and a metal thin film on the outer peripheral surface of the can roller 111,
Is rotated, and a predetermined position is irradiated with laser light in synchronization with the rotation. The laser beam from the laser processing device 125 can be removed by heating and melting (partially further evaporating) both the resin thin film and the metal thin film. Therefore, it is possible to form a through-hole penetrating the laminate in the laminating direction. As a laser light source that can process both resin thin films and metal thin films,
For example, a CO ₂ laser, a YAG laser, an excimer laser, a green laser, or the like can be used, depending on the resin thin film material and the metal thin film material and their thickness.

The plasma irradiation device 127 is installed downstream of the laser processing device 125 toward the outer peripheral surface of the can roller 111. As the plasma, oxygen plasma, argon plasma, nitrogen plasma, or the like can be used, but oxygen plasma is preferable from the viewpoint of the cleaning speed of the laser-processed surface.

The alternate lamination process using the apparatus shown in FIG. 8 will be described below.

The pressure inside the vacuum chamber 115 is reduced to, for example, about 2 × 10 ⁻² Pa by the vacuum pump 116.

The outer peripheral surface of the can roller 111 is preferably cooled to -20 to 40 ° C, particularly preferably -10 to 10 ° C. The rotation speed can be set freely, but 15 to 100
rpm, the peripheral speed is preferably 10 to 300 m / mi.
n.

The resin thin film forming device 112 heats and vaporizes or atomizes the resin thin film material and discharges it toward the outer peripheral surface of the can roller 111. Resin thin film material is can roller 111
Is cooled on the outer peripheral surface of the substrate to form a liquid film.

The resin thin film material is not particularly limited as long as it can form a thin film by depositing in this way, and can be appropriately selected depending on the use of the obtained laminate. preferable. For example, those containing acrylate resin or vinyl resin as a main component are preferable,
Specifically, polyfunctional (meth) acrylate monomers and polyfunctional vinyl ether monomers are preferable, and among them, cyclopentadiene dimethanol diacrylate, cyclohexane dimethanol divinyl ether monomer or the like or a monomer obtained by substituting these hydrocarbon groups has electric characteristics,
It is preferable in terms of heat resistance, stability and the like.

The deposited resin thin film material may be subjected to a curing treatment to a desired degree of curing by a resin curing device 118 if necessary. Examples of the curing treatment include a treatment for polymerizing and / or crosslinking a resin thin film material. As the resin curing device, for example, an electron beam irradiation device, an ultraviolet irradiation device, a thermosetting device, or the like can be used. The degree of the curing treatment may be appropriately changed according to the required characteristics of the laminated body to be produced, but it is preferable to carry out the curing treatment until the degree of curing becomes 50 to 95%, more preferably 50 to 75%. Incidentally, the degree of cure of the present invention,
Using an infrared spectrophotometer, the absorbance of the C = O group and the C = C group (160
0 cm ^-1 ), the ratio of each monomer to the cured product is defined, and the reduced absorbance is defined as subtracted from 1.

The formed resin thin film is subjected to a surface treatment by a surface treatment device 119 as required. For example, by performing a discharge treatment or an ultraviolet irradiation treatment or the like in an oxygen atmosphere, the surface of the resin thin film can be activated to improve the adhesion to the metal thin film.

Next, the patterning material is applied to the resin thin film in a lattice pattern as shown in FIG. 10 by the pair of patterning material applying devices 130a and 130b. When a metal thin film is formed by vapor deposition or the like after forming the patterning material thinly, the metal thin film is not formed on the patterning material, and a margin portion is formed. Thus, a metal thin film having a desired pattern can be formed.

The patterning material used is preferably at least one oil selected from the group consisting of ester oils, glycol oils, fluorine oils and hydrocarbon oils. More preferably,
Ester oils, glycol oils and fluorine oils are preferred, and fluorine oils are particularly preferred. If a patterning material other than the above is used, problems such as roughening of the laminated surface, pinholes in the resin thin film or the metal thin film, and instability at the boundary between the formed metal thin films may occur.

After applying the patterning material, a metal thin film is laminated by the metal thin film forming apparatus 114. As a method for laminating a metal thin film, known vacuum processing means such as evaporation, sputtering, and ion plating can be applied.
In the present invention, vapor deposition, particularly electron beam vapor deposition, is preferred in that a film having excellent moisture resistance can be obtained with high productivity. As the material of the metal thin film, aluminum, copper, zinc, nickel, iron, cobalt, silicon, germanium or a compound thereof,
Alternatively, oxides of these compounds, oxides of these compounds, or the like can be used. Among them, aluminum is preferred in terms of adhesiveness and economy. Note that the metal thin film may include components other than the above. In addition, the characteristics are complemented by mixing an Al layer and a Cu layer instead of using a single metal thin film, and the performance may be improved depending on the use conditions. When the formation of the metal thin film is interrupted, the opening 121 is closed with the shielding plate 123.

Thereafter, the patterning material removing device 117
As a result, excess patterning material is removed. Most of the patterning material evaporates and disappears when the metal thin film is formed, but part remains after the metal thin film is laminated. The remaining patterning material causes problems such as roughening of the laminated surface, pinholes (lamination loss) of the resin thin film and the metal thin film, and instability at the formation boundary portion of the metal thin film. The method of removing the patterning material is not particularly limited and may be selected according to the patterning material to be used. For example, the removal may be performed by light irradiation, heating and removal by an electric heater, plasma irradiation, ion irradiation, decomposition and removal by electron irradiation, or the like. Can be.

According to the manufacturing apparatus 100 described above, the opening 12
In a state where 1 is opened, the resin thin film formed by the resin thin film forming device 112 is provided on the outer peripheral surface of the rotating can roller 111,
A laminate in which metal thin films are alternately stacked by the metal thin film forming apparatus 114 is manufactured, and in a state where the opening 121 is shielded, on the outer peripheral surface of the orbiting can roller 110,
The laminated body in which the resin thin films are continuously laminated by the resin thin film forming apparatus 112 is manufactured.

Furthermore, as described above, the can roller 11
Patterning material applying apparatus 130 in synchronization with one rotation
By controlling the reciprocating movements of a and 130b, the position of the grid-like margin portion pattern of the metal thin film can be alternately changed in two ways via the resin thin film.

After the lamination of the resin thin film and the metal thin film is completed, a through hole is formed in the laminated body by using a laser processing apparatus 125 in a state where the laminated body is laminated on the outer peripheral surface of the can roller 111. Specifically, while rotating the can roller 111, the laser beam is scanned in synchronization with the rotation to irradiate a predetermined position with the laser beam.

After forming the through holes, the plasma irradiation device 127
It is preferable to irradiate the plasma on the inner wall surface of the through hole. By performing the plasma treatment on the inner wall surface of the through hole, the resin thin film material exposed on the inner wall surface is removed, and the amount of the metal thin film exposed increases. As a result, when the conductive material is filled in the through-hole later, the reliability of the electrical connection between the conductive material and the metal thin film can be improved.

FIG. 11 is a developed plan view of the thin film laminate formed on the outer peripheral surface of the can roller 111. In FIG. 11, an arrow 111b indicates the moving direction of the outer peripheral surface of the can roller 111.

The metal thin film 3 patterned in a substantially lattice shape
1a and metal thin films 31b are alternately stacked via a resin thin film. The substantially lattice-shaped margin portion pattern of the metal thin film 31a and the substantially lattice-shaped margin portion pattern of the metal thin film 31b are substantially the same, and both patterns are the same.
And the metal thin film 31b are formed so as to be shifted from each other so as to have a predetermined overlapping portion in the laminating direction. The overlapping portion of the metal thin film 31a and the metal thin film 31b forms a capacitance forming region when used as a capacitor.

The through holes 33a in the stacking direction are
a, and the metal thin film 31b is formed at a position not penetrating. Further, the through-hole 33b in the stacking direction is
b, and the metal thin film 31a is formed at a position not penetrating.

After the laminate is peeled off from the can roller 111 and flat-pressed, a conductive material (for example, a well-known conductive resin containing metal particles) is filled in the through holes 33a and 33b.
To obtain a laminated body element.

Next, a cutting and separating step is performed. Metal thin film 3
Along the margin portion where 1a and 31b are not formed,
That is, cutting is performed in the laminating direction at the cut surfaces 71a and 71b. Thus, a thin film stack as shown in Embodiment A-1 (FIG. 1) can be obtained.

As described above, according to the present embodiment, the cut surfaces 71a and 71b do not include the regions where the metal thin films 31a and 31b are formed. That is, since the metal thin films 31a and 31b are not cut, burrs and chips generated when cutting the metal thin film do not occur. Further, since the metal thin film is not cut, the cutting force can be reduced, and the deformation of the thin film laminate and the breakage of the metal thin film hardly occur at the time of cutting. In addition, since the metal thin film is not exposed on the cut surface, corrosion of the metal thin film does not easily occur without providing an exterior.

Further, since the through holes 33a and 33b are formed by using the laser processing device 125, no mechanical external force is applied to the metal thin film or the resin thin film during the processing. Therefore, neither deformation of the thin film laminate nor breakage of the metal thin film occurs.

It is needless to say that the outer surface of the thin film laminate obtained as described above can be covered or colored as required.

In the above, at the first stage and the last stage of the alternate laminating step, a protective layer having a predetermined thickness in which only the resin thin film is continuously laminated by closing the opening 121 may be formed.

In the above embodiment A-4 (Embodiment A-4), the plane parallel to the cutting plane 71a and substantially passing through the respective centers of the through holes 33a and 33b is used as the cutting plane instead of the cutting plane 71a. The thin film laminate shown in FIG. 5) can be obtained. In this case, the metal thin films 31a, 31b
Is cut, but the notch 53
a, 53b and the margin portion, so that the actual metal thin film 31
The cutting area of a, 31b is reduced. Also, the other cut surface 71b does not cut the metal thin films 31a, 31b. Therefore, the cutting area of the metal thin film can be reduced as compared with the separation and cutting step in the conventional capacitor manufacturing method. Therefore, generation of burrs and chips generated when cutting the metal thin film can be reduced. Further, the cutting force can be reduced, and the deformation of the thin film laminate and the breakage of the metal thin film hardly occur at the time of cutting. Further, since the metal thin film is not exposed on the peripheral surface other than the surface where the notches 53a and 53b are formed, corrosion of the metal thin film hardly occurs.

Further, in order to obtain the array capacitor (embodiment in which the capacitor element 36 is the capacitor of the embodiment A-1) shown in the embodiment A-3 (FIG. 4), the following may be performed. That is, in the above, the metal thin film 31
A through-hole (second through-hole) is formed as necessary at a predetermined position in the margin portion region where a and 31b are not formed, and the second through-hole is similarly filled with a conductive material. hand,
A through electrode is formed. After that, the metal thin films 31a, 31b
In addition, cutting is performed in the margin region so as not to cut the through electrode. Also in this case, since the metal thin films 31a and 31b are not cut, burrs and chips generated when cutting the metal thin film do not occur. Further, since the metal thin film is not cut, the cutting force can be reduced, and the deformation of the thin film laminate and the breakage of the metal thin film hardly occur at the time of cutting. In addition, since the metal thin film is not exposed on the cut surface, corrosion of the metal thin film does not easily occur without providing an exterior.

(Embodiment B-2) This embodiment is different from the above-described embodiment B-1 in the following points. That is, in the embodiment B-1, after the completion of the alternate laminating step, a through-hole is formed in the laminated body by irradiating a laser beam using the laser processing apparatus 125. However, in the present embodiment B-2, the alternating hole is formed. A laser beam is irradiated during the laminating step.

More specifically, the newly-laminated resin thin film and metal thin film are irradiated with laser light by using the laser processing device 125 by rotating the can roller 111 once, so that the resin thin film and the metal thin film at predetermined positions are formed. Remove. By scanning the laser beam in synchronization with the rotation of the can roller 111, the irradiation position of the laser beam in the stacking direction is matched. As a result, holes continuous in the stacking direction can be formed, and as a result, through holes in the stacking direction can be formed. When a through electrode is formed, a region where the metal thin film of the resin thin film is not formed may be irradiated with laser light to process a through hole (second through hole) for the through electrode.

Also in the present embodiment, it is preferable to perform plasma processing on the inner wall surface of the through-hole using the plasma irradiation device 127. The plasma treatment can be performed at any time during the alternate lamination process, or can be performed after the completion of the alternate lamination process.

In this embodiment, non-through holes can be easily formed by stopping the hole processing by the laser processing device 125 at a predetermined time in the alternate lamination process.
For example, when forming a protective layer in which only a resin thin film is continuously laminated on an upper layer and / or a lower layer of a thin film laminate, no hole processing is performed on any of the upper and lower protective layer portions, and the extraction electrode is formed. A capacitor formed only on one of the upper and lower surfaces can be obtained.

Other than the above, it is the same as Embodiment B-1.

(Embodiment B-3) The embodiment B-3
It differs from the embodiment B-2 in the following points. That is, in the present embodiment B-3, as the laser processing device 125, a laser processing device having a characteristic that a resin thin film can be removed and a metal thin film cannot be removed is used. As a laser light source having such characteristics, although it depends on a resin thin film material and a metal thin film material, for example, a laser having a relatively long wavelength such as a CO ₂ laser can be used.

In the alternate laminating step, the metal thin film is formed by the metal thin film forming device 114 and then the resin thin film forming device 11 is formed.
After laminating the resin thin films in order by using the laser processing device 1
A predetermined position is irradiated with a laser beam using 25. The laser beam from the laser processing device 125 removes the resin thin film and forms a through hole penetrating the resin thin film at the irradiation position. When there is a metal thin film under the resin thin film, the laser light has no effect on the metal thin film if the laser power is controlled to a predetermined value or less. Thereafter, when a metal thin film is formed in a region including the through hole formed in the resin thin film, the metal thin films above and below the resin thin film are connected via the through hole.

As in the embodiments B-1 and B-2, each time the can roller 111 makes one rotation, the pattern position of the grid-like margin portion of the metal thin film is changed. By appropriately setting the position of the through-hole formed in the resin thin film with respect to the lattice pattern position of the metal thin film that changes for each layer, every other layer of the metal thin film is connected by the through-hole formed in the resin thin film. The obtained laminated body element is obtained.

This laminated body element was used in Embodiments B-1 and B
As in the case of -2, cutting is performed at the cut surfaces 71a and 71b in FIG. Thus, a thin film stack as shown in Embodiment A-2 (FIG. 3) can be obtained. Also, the cut surface 71
The thin film stack shown in Embodiment A-5 (FIG. 7) is formed by setting a surface parallel to the cut surface 71a and passing through substantially the center of each of the through hole 33a and the through hole 33b as a cut surface instead of the thin film lamination. You can get the body.

In the present embodiment, in the alternate lamination process, a metal thin film is formed after forming a through hole in the resin thin film, so that the metal thin film material is filled in the through hole. For this reason, since the metal thin films are sequentially connected via the through holes formed in the resin thin film, it is not necessary to fill the through holes with a conductive material as in the embodiments B-1 and B-2. However,
In the case where a hole is formed in the resin thin film on the upper surface layer of the multilayer mother element and a metal thin film is exposed at the bottom of the hole, the hole may be filled with a conductive material so as to be connected to the metal thin film. preferable. Thus, the electrode can be easily taken out through the filled conductive material.

In the alternate laminating step, a region where the metal thin film is not formed is irradiated with laser light to form a through-hole (second through-hole), and the through-hole is made continuous in the laminating direction. As a result, a laminated mother element having a through hole that does not penetrate the metal thin film is obtained. Embodiment B-1 and B-
When a conductive material is filled in the same manner as in Example 2 and cut in the margin portion region, the array capacitor (the capacitor element 36 having the through-hole electrode shown in Embodiment A-3 in Embodiment A-3) is provided.
Embodiment 2).

Also in the present embodiment, it is preferable to perform plasma processing on the inner wall surface of the through-hole using the plasma irradiation device 127 during the alternate lamination process.

In this embodiment, similarly to Embodiment B-2, the laser processing apparatus 1 is set at a predetermined time in the alternate lamination process.
The boring by 25 may be stopped. For example, when forming a protective layer in which only a resin thin film is continuously laminated on an upper layer and / or a lower layer of a thin film laminate, no hole processing is performed on any of the upper and lower protective layer portions, and an electrode extraction surface is formed. Can be obtained with only one of the upper and lower surfaces.

Except for the above, it is the same as Embodiment B-2.

(Embodiment B-4) Embodiment B-4
Differs from the above-described embodiments B-1 to B-3 in that patterning of a metal thin film is performed by a laser patterning method using a laser beam.

FIG. 12 is a schematic sectional view showing an example of a manufacturing apparatus for performing the method for manufacturing a thin film laminate according to Embodiment B-4 of the present invention. The same components as those in FIG. 8 are denoted by the same reference numerals, and redundant description will be omitted.

In this embodiment, Embodiments B-1 to B-1
-3, instead of the patterning material applying devices 130a and 130b and the patterning material removing device 117 (see FIG. 8) used for patterning the metal thin film,
A laser patterning device 140 is used. The laser patterning device 140 is installed downstream of the metal thin film forming device 114 and upstream of the resin thin film forming device 112.

After the formation of the metal thin film, the surface of the metal thin film is irradiated with laser light using a laser patterning device 140, and the irradiated metal thin film is heated and melted (partly evaporated) to be removed. Form.

The laser beam emitted from the laser patterning device 140, unlike the laser beam from the laser processing device 125, needs to have a characteristic that acts only on the metal thin film and has no effect on the resin thin film. . Such characteristics depend on the resin thin film material and the metal thin film material as the laser light source. For example, YAG (Yttrium Aluminum Gar)
net) Laser light having a relatively short wavelength such as a laser, a green laser, and an excimer laser is desirable. The long-wavelength laser light is reflected on the surface of the metal thin film. The output of the laser light source can be selected according to the type and thickness of the metal thin film to be removed.

The laser beam is radiated according to a desired shape pattern of the margin portion. A plurality of laser light sources can be used depending on the shape pattern of the margin portion. For example, when patterning a metal thin film so as to have a grid-like margin portion, the following may be performed. The light from the first laser light source is converted into a can roller 1 by using a prism.
11 is divided into a plurality of portions in a direction parallel to the rotation axis of
A plurality of strip-shaped margin portions which are continuous in the running direction of the outer peripheral surface are formed. Light from the second laser light source is scanned by a known method so as to intersect with the strip-shaped margin portion of the first laser light source.

When patterning of a metal thin film is performed by a laser patterning method as in this embodiment, patterning of an arbitrary shape can be easily formed. In the oil patterning method according to Embodiments B-1 to B-3,
Although a margin portion oblique to the traveling direction of the outer peripheral surface of the can roller 111 is formed, in the laser patterning method of the present embodiment, the margin portions in the direction parallel to and perpendicular to the traveling direction of the outer peripheral surface of the can roller 111 are formed. Can be formed.

With the rotation of the can roller 111, the resin thin film is laminated by the resin thin film forming device 112 on the metal thin film patterned in a lattice by the laser patterning device 140, and the metal thin film forming device 1
14, a metal thin film is laminated. Thereafter, the metal thin film on the surface layer is patterned again in a lattice shape by the laser patterning device 140, and the formation position of the lattice pattern at this time is shifted by a predetermined amount from the formation position of the previous lattice pattern. In addition, Canroller 1
11 shifts the formation position of the grid pattern formed on the laminated metal thin film by one rotation from the previous grid pattern formation position by a predetermined amount, and is the same as the grid pattern pattern formation position of the previous two times Position. In this manner, two types of metal thin films whose lattice pattern positions are shifted by a predetermined amount can be alternately stacked via the resin thin film.

In this way, a thin film laminate similar to that shown in FIG. 11 can be obtained on the outer surface of the can roller 111. However, in the present embodiment, the can roller 1
As described above, the relative relationship between the traveling direction 111b on the outer peripheral surface of the eleventh and the lattice pattern direction is not limited to that shown in FIG.

Other than the above, Embodiments A-1, A-2, and A-
4 and A-5, or the array capacitor shown in Embodiment A-3 can be obtained.

(Embodiment B-5) Embodiment B-5
The above-described Embodiments B-1 to B-1 in which an oil patterning method is used in combination with an oil patterning method and a laser patterning method in patterning a metal thin film.
B-3 is different from the embodiment B-4 performed by the laser patterning method.

FIG. 13 is a schematic cross-sectional view showing one example of a manufacturing apparatus for performing the method of manufacturing a thin film laminate according to Embodiment B-5 of the present invention. The same components as those in FIGS. 8 and 12 are denoted by the same reference numerals, and redundant description will be omitted.

In this embodiment, the patterning material applying device 142 is installed downstream of the resin thin film forming device 112 and upstream of the metal thin film forming device 114. The patterning material applying device 142 forms a plurality of band-shaped margin portions by an oil patterning method. In addition, the laser patterning device 140 is
And on the upstream side of the resin thin film forming apparatus 112. The laser patterning device 140 forms a margin portion that intersects the strip-shaped margin portion by the patterning material applying device 142 by a laser patterning method.

In the patterning material applying device 142, a plurality of fine holes formed toward the outer peripheral surface of the can roller 111 are arranged at predetermined intervals in a direction perpendicular to the running direction of the outer peripheral surface of the can roller 111. I have. The patterning material vaporized inside the patterning material applying device 142 is released from the fine holes and adheres to the resin thin film laminated on the can roller 111, and the
To form a plurality of strip-shaped liquid films parallel to the running direction of the outer peripheral surface.

Thereafter, when the metal thin film is laminated by the metal thin film forming apparatus 114, a strip-shaped margin portion corresponding to the liquid film portion of the patterning material is formed.

Next, using a laser patterning device 140, a laser beam is scanned so as to intersect with the strip-shaped margin portion and is irradiated on the metal thin film to form a margin portion. Thereby, a metal thin film patterned into a desired lattice shape can be formed.

Also in the present embodiment, the formation position of the lattice pattern of the metal thin film of a certain layer is shifted by a predetermined amount with respect to the formation position of the lattice pattern of the metal thin film formed thereunder via the resin thin film. It is shifted and further matched with the formation position of the lattice pattern of the metal thin film formed thereunder via the resin thin film. That is, two types of metal thin films whose lattice pattern positions are shifted by a predetermined amount are alternately stacked via a resin thin film. This can be realized, for example, as follows. As a first method, the can roller 111
Makes one rotation, the patterning material applying device 142 is moved by a predetermined amount in the rotation axis direction of the can roller 111, and reciprocates to return to the original position after the next one rotation. Alternatively, as a second method, when the can roller 111 makes one rotation, the irradiation position of the laser beam by the laser patterning device 140 is shifted by a predetermined amount in a direction perpendicular to the scanning direction, and returns to the original position after the next one rotation. An operation may be performed.

Thus, a thin film laminate similar to that shown in FIG. 11 can be obtained on the outer surface of the can roller 111. However, in the present embodiment, the direction of the margin portion in either the vertical or horizontal direction of the lattice pattern of the metal thin film coincides with the running direction 111b of the outer peripheral surface of the can roller 111.
In addition, by moving the patterning material applying device 142 in a direction parallel to the rotation axis direction of the can roller 111 or adjusting the scanning condition of the laser beam by the laser patterning device 140, the margin of the lattice pattern of the metal thin film can be adjusted. The direction of the portion may intersect the running direction 111b of the outer peripheral surface of the can roller 111 at an arbitrary angle. The setting of the direction of the margin portion is determined in consideration of the equipment scale, the scanning speed of the laser to be used, and the like.

Other than the above, Embodiments A-1, A-2 and A- are the same as any of Embodiments B-1 to B-3.
4 and A-5, or the array capacitor shown in Embodiment A-3 can be obtained.

(Embodiment B-6) Embodiment B-6
Then, instead of the cylindrical can roller 111 used in Embodiments B-1 to B-5, a regular polygonal pillar-shaped support is used, and the support is intermittently rotated so that the thin film laminate is formed around its periphery. Form.

FIG. 14 is a schematic sectional view showing main components of an example of a manufacturing apparatus for performing the method of manufacturing a thin film laminate according to Embodiment B-6 of the present invention. FIG.
7, the same components as those in FIGS. 8, 12, and 13 are denoted by the same reference numerals, and redundant description will be omitted.

In this embodiment mode, a thin film laminate is formed on the outer peripheral surface of the support body 211 having a regular octagonal prism shape. Support 211
Rotates intermittently by 45 degrees in the direction of rotation 211a.

The metal thin film is patterned by an oil patterning method using the patterning material applying devices 220 and 230.

In the first patterning material applying device 220, fine holes 222 are formed toward the outer peripheral surface of the support 211.
Plural pieces are formed at a predetermined pitch in the direction perpendicular to the paper surface (the width direction of the outer peripheral surface of the support body 211). When the rotation of the support 211 is stopped, the patterning material applying device 220 moves in the movement direction 224 while discharging the patterned material vaporized in the device from the fine holes 222. As a result, a plurality of strip-shaped liquid films of the patterning material are formed on the outer peripheral surface of the support 211 in parallel with the moving direction of the outer peripheral surface.

Thereafter, when the support 211 is rotated by 45 degrees, the outer peripheral surface of the support 211 to which the patterning material has been applied by the first patterning material applying device 220 faces the second patterning material applying device 230. .

In the second patterning material applying device 230, fine holes 232 are formed toward the outer peripheral surface of the support 211.
A plurality of support members 211 are formed at a predetermined pitch in the moving direction of the outer peripheral surface. When the rotation of the support 211 is stopped, the patterned material vaporized in the apparatus is filled with the fine holes 232.
The patterning material applying device 230 moves in the direction perpendicular to the plane of the drawing (the width direction of the outer peripheral surface of the support body 211) while discharging from the substrate. As a result, a plurality of band-shaped liquid films of the patterning material are formed on the outer peripheral surface of the support 211 in the width direction of the support.

The outer peripheral surface of the support 211 on which the liquid film of the patterning material is formed in a substantially lattice shape by the first and second patterning material applying devices 220 and 230 is
Is further rotated by 45 degrees, so that a metal thin film that is opposed to the metal thin film forming device 114 and that is patterned into a substantially rectangular shape is formed.

After that, the surface on which the metal thin film is formed faces the resin thin film forming device 240. Resin thin film forming device 240
Has inclined heating plates 243a and 243b. The liquid resin thin film material 241 passes through the supply pipe 242 and passes through the heating plate 2.
The liquid drops 43a are evaporated on the heating plates 243a and 243b while flowing sequentially. The resin thin film material that has not completely evaporated is collected in the tray 244. The evaporated resin thin film material is used as a shielding plate 245a and shielding plates 245b and 245c.
And adhere to the outer peripheral surface of the support 211 to form a resin thin film.

As described above, the support 21 having a regular octagonal prism shape is used.
1 is intermittently rotated every 45 degrees in the direction of the rotation direction 211a, thereby forming an alternating laminate of a metal thin film and a resin thin film patterned in a rectangular shape on the outer peripheral surface of the support 211. it can.

Also in the present embodiment, a thin film laminate for a capacitor can be obtained by alternately laminating two types of metal thin films in which the lattice pattern positions of the metal thin films are shifted by a predetermined amount via a resin thin film. it can. To shift the lattice pattern of the metal thin film, for example, the first patterning material applying device 220 or the second patterning material applying device 2
30 can be realized by moving the support body 211 by a predetermined amount in a direction perpendicular to the moving direction each time the support body 211 makes one rotation.

Although not shown in FIG. 14, the above device is housed in a vacuum device maintained at a predetermined degree of vacuum. 8, 12, and 13, the patterning material removing device 117, the resin curing device 118, the surface treatment device 119, the shielding plate 123, and the plasma irradiation device 127 are opposed to the outer peripheral surface of the support 211. Can be arranged.

After the thin film laminate is formed, the laminate is laminated on the outer peripheral surface of the support 211, and the laminate is placed at a predetermined position of the laminate by using the laser processing apparatus 125 as in Embodiment B-1. A through hole penetrating the whole is formed. Alternatively, each time the rotation of the support 211 is stopped during the alternate lamination process, the laser processing device 125 may be used similarly to Embodiment B-2.
Is used to form through holes in the newly laminated resin thin film and metal thin film at predetermined positions. After the alternate lamination step, the laminate is peeled from the support 211, and the through holes are filled with a conductive material. Thereafter, by cutting at a predetermined position, the thin film laminate as shown in Embodiments A-1 (FIG. 1) and A-4 (FIG. 5), and as shown in Embodiment A-3 (FIG. 4). An array capacitor (an embodiment in which the capacitor element 36 is the capacitor of the embodiment A-1) can be obtained.

Further, using a laser processing apparatus 125 capable of removing only the resin thin film, the support 2
Each time the rotation of the motor 11 stops, a through hole is formed in the newly laminated resin thin film at a predetermined position, as in the embodiment B-3. Thereafter, the laminate is peeled off from the support 211 and cut at a predetermined position, whereby Embodiment A-2 (FIG. 3)
A-5 (FIG. 7) can be obtained. Further, a second through hole for a through electrode is formed in a region where a metal thin film is not formed, a conductive material is filled in the second through hole, and the second through hole is cut, whereby the array capacitor (capacitor element 36 shown in Embodiment A-3) is formed. Of the embodiment A-2).

In the example of FIG. 14, the lattice patterning of the metal thin film is performed by the first and second patterning material applying devices 2.
The oil patterning method was performed using 20, 230, but the present invention is not limited to this. For example, the metal thin film can be patterned by a laser patterning method using a laser patterning device as described in Embodiment B-4 instead of the first and second patterning material applying devices 220 and 230. Alternatively, one of the first and second patterning material applying devices 220 and 230 is replaced with a laser patterning device, and an oil patterning method and a laser patterning method are used together as in Embodiment B-5. Alternatively, a metal thin film can be patterned.

The support 211 is not limited to a regular octagonal prism. Other shapes such as a regular hexagonal prism and a regular decagonal prism may be used.

As described above, according to the present embodiment, the thin film laminate is formed in a flat plate shape on each outer peripheral surface of the support 211, so that the support is thinner than when a roll-shaped support is used. It is possible to omit or simplify a flat plate pressing step or the like after peeling from the 211. Further, since the occurrence of cracks in the thin film laminate, breakage of the metal thin film, and the like in the flat plate pressing step can be prevented, the yield is improved.

(Embodiment B-7) Embodiment B-7
Uses a plate-shaped support of a predetermined size as the support. While continuously transporting a plurality of such supports, a resin thin film and a metal thin film are formed on the lower surface thereof.

More specifically, a transport path for circulating a plurality of supports is formed, and a resin thin film forming apparatus and a metal thin film forming apparatus are arranged in the middle of the transport path. When the support passes over the resin thin film forming device and the metal thin film forming device, a resin thin film and a metal thin film are formed on the lower surface of the support, respectively.

When the metal thin film is patterned using the oil patterning method, the support passes through the patterning material applying device after passing over the resin thin film forming device and before arriving at the metal thin film forming device. To be configured.
When the metal thin film is patterned by using the laser patterning method, the support is configured to pass through the laser patterning device after passing through the metal thin film forming device and before reaching the resin thin film forming device. I do.

When a through-hole is formed, a laser processing apparatus should be installed in the circuit of the support according to the arrangement of Embodiments B-1 to B-6 according to the thin film to be processed. Can be.

In addition, a patterning material removing device, a resin curing device, a surface treatment device, a plasma treatment device, and the like may be provided in the circulation path of the support according to the arrangement of Embodiments B-1 to B-6 as necessary. Can be installed.

As described above, an alternate laminate of a metal thin film and a resin thin film patterned on a support can be obtained. After that, if necessary, the through holes are filled with a conductive material, and then cut, whereby Embodiments A-1 and A-
2, A-4, A-5 thin film laminate or Embodiment A
-3 array capacitor can be obtained.

[0195]

(Example 1) An example of manufacturing the thin film laminate and the chip capacitor shown in Embodiment A-1 (FIG. 1) using the manufacturing apparatus shown in Embodiment B-1 (FIG. 8). Will be described.

The inside of the vacuum chamber 115 was adjusted to 2 × 10 ⁻² Pa by the vacuum pump 116, and the outer peripheral surface of the can roller 111 was cooled to 10 ° C. The diameter of the can roller 111 was 500 mm, and the moving speed of the outer peripheral surface was 100 m / min.

As a resin thin film material, dicyclopentadiene dimethanol diacrylate was used. Aluminum was used as the metal thin film material, and was formed by vapor deposition.
Fluorine-based oil was used as the patterning material.

Prior to lamination, a fluorine-based release agent ("Daifree" manufactured by Daikin Industries, Ltd.) was spray-coated on the outer peripheral surface of the can roller 111, and then spread thinly with a nonwoven fabric.

First, a protective layer in which only a resin thin film was continuously laminated was laminated. The resin thin film material was vaporized and deposited on the outer peripheral surface of the can roller 111 by the resin thin film forming device 112. The lamination thickness per layer is 0.6 μm. Next, using an ultraviolet curing device as the resin curing device 118, the resin thin film material deposited as described above was polymerized and cured until the degree of curing became 70%. This operation was repeated by rotating the can roller 111 to form a 15 μm thick protective layer on the outer peripheral surface of the can roller 111. During this time, the opening 121 was shielded by the shield plate 123.

Next, an element layer serving as a capacitor generating portion as a capacitor was laminated. Using the above resin thin film material, the lamination thickness per layer was 0.1 μm. Next, the resin thin film was cured by the resin curing device 118 until the degree of curing became 70%. After that, the surface was subjected to oxygen plasma treatment by the surface treatment device 119. Next, the vapor of the patterning material was emitted from the fine holes of the patterning material applying devices 130a and 130b. The patterning material applying devices 130a and 130b are reciprocated at substantially the same speed as the moving speed of the outer peripheral surface of the can roller 111, and a grid-like liquid film pattern of the patterning material is formed on the resin thin film surface on the outer peripheral surface of the can roller 111. Formed. Next, aluminum was vapor-deposited from the metal thin film forming apparatus 114. The lamination thickness was 30 nm. Thereafter, far-infrared heating and plasma discharge treatment were performed using a patterning material removing device 117 to remove the remaining patterning material.

The grid pattern position of the patterning material was changed each time the can roller 111 made one rotation, and two types of metal thin films having different grid pattern positions were alternately laminated via a resin thin film.

The above operation is repeated about 3000 times by rotating the can roller 111 to obtain a total thickness of 390.
A μm element layer was formed.

Thereafter, the opening 121 was closed and a protective layer was laminated in the same manner as the formation of the protective layer.

After the formation of the protective layer, the resin thin film forming apparatus was stopped, and a laser processing apparatus 125 was used to rotate the can roller 111 to form a through hole penetrating the entire laminate at a predetermined position. As the laser processing device 125, C
An O ₂ laser (output 20 W) was used. At this time, the inside of the formed through hole was subjected to oxygen plasma treatment by the plasma irradiation device 127.

Next, the laminate was peeled off from the can roller 111, flat-pressed, and filled with a conductive resin in the through holes to obtain a laminate mother element.

Thereafter, the metal thin film was cut at a position where the metal thin film was not cut (margin portion) to obtain a thin film laminate as shown in FIG.

The external dimensions of the obtained thin film laminate are 0.5 vertical.
mm, width 1.0mm, thickness (height in stacking direction) 0.42m
m, and the through-hole diameter is 0.2 mm. Further, the area of the facing region of the metal thin film functioning as a capacitor has a height of 0.1 mm.
It is 4 mm × 0.3 mm in width. Electrode terminals were formed on the conductive resin surfaces in the pair of through holes, and the characteristics as a capacitor were evaluated. As a result, the capacitance was 40 nF.

Example 2 Example 1 except that the shift amount of the lattice pattern of the upper and lower metal thin films sandwiching the resin thin film was changed.
In the same manner as in the above, a laminated mother element was obtained. Next, the position of the cut surface is changed from that of Example 1 to obtain Embodiment A-4.
The thin film laminate shown in FIG. 5 was obtained.

[0209] The outer dimensions of the obtained thin film laminate are 0.5 vertical.
mm, width 1.0mm, thickness (height in stacking direction) 0.42m
m, and the radius of the semicircular cutout is 0.1 mm. The area of the facing region of the metal thin film functioning as a capacitor is 0.4 mm long × 0.65 mm wide. Electrode terminals were formed on the conductive resin surfaces in the pair of cutouts to evaluate the characteristics as a capacitor.
F. In the capacitor of the present embodiment, the area of the opposing region of the metal thin film can be increased while having substantially the same external dimensions as the capacitor of Embodiment 1, and as a result, the capacitance can be increased.

[0210]

As described above, according to the present invention, corrosion or the like of a metal thin film is unlikely to occur, and problems that occur during cutting of a metal thin film in a manufacturing process, such as burrs and chips of the metal thin film, breakage of the metal thin film, and the like. In addition, it is possible to obtain a thin film laminate and a capacitor in which deformation of the thin film laminate is less likely to occur. Furthermore, a mounting area at the time of mounting on a substrate can be reduced, and a capacitor capable of high-density mounting can be obtained. In addition, a high-capacity capacitor can be obtained despite its small size.

[Brief description of the drawings]

FIG. 1 shows a schematic configuration of a chip capacitor using a thin film laminate according to Embodiment A-1 of the present invention, where FIG. 1 (A) is a front sectional view, and FIG. 1 (B) is a right side view. 1 (C) is a plan view, FIG. 1 (D) is a cross-sectional view taken along the line DD in FIG. 1 (A), and FIG. 1 (E) is FIG. 1 (A).
FIG. 5 is a cross-sectional view taken along a line EE in FIG.

FIG. 2 is a schematic side view showing a state where the capacitor according to the embodiment A-1 of the present invention is mounted on a circuit board.

FIG. 3 shows a schematic configuration of a chip capacitor using a thin film laminate according to Embodiment A-2 of the present invention, where FIG. 3 (A) is a front sectional view, and FIG. 3 (B) is a right side view. 3 (C) is a bottom view, FIG. 3 (D) is a cross-sectional view taken along the line DD of FIG. 3 (A), and FIG. 3 (E) is FIG. 3 (A).
FIG. 5 is a cross-sectional view taken along a line EE in FIG.

FIG. 4A is a plan view showing a schematic configuration of a capacitor (array capacitor) according to Embodiment A-3;
FIG. 4B is a side view showing an example in which the capacitor of FIG. 4A is mounted on a circuit board.

FIG. 5 shows a schematic configuration of a chip capacitor using a thin film laminate according to Embodiment A-4 of the present invention, where FIG. 5 (A) is a front sectional view, and FIG. 5 (C) is a plan view, FIG. 5 (D) is a cross-sectional view taken along a line DD in FIG. 5 (A), and FIG. 5 (E) is FIG. 5 (A).
FIG. 5 is a cross-sectional view taken along a line EE in FIG.

FIG. 6 is a schematic side view showing a state where the capacitor according to the embodiment A-4 of the present invention is mounted on a circuit board.

FIG. 7 shows a schematic configuration of a chip capacitor using a thin film laminate according to Embodiment A-5 of the present invention, where FIG. 7 (A) is a front sectional view, and FIG. 7 (B) is a right side view. 7 (C) is a bottom view, FIG. 7 (D) is a cross-sectional view taken along the line DD of FIG. 7 (A), and FIG. 7 (E) is FIG. 7 (A).
FIG. 5 is a cross-sectional view taken along a line EE in FIG.

FIG. 8 is a schematic cross-sectional view showing an example of a manufacturing apparatus for performing the method for manufacturing a thin film laminate according to Embodiment B-1 of the present invention.

9 is a diagram showing a schematic configuration of a patterning material applying apparatus, FIG. 9 (A) is a front view seen from a can roller side, and FIG. 9 (B) is a line BB in FIG. 9 (A). FIG.

FIG. 10 is a development view of an example of a stripe pattern of a patterning material formed on an outer peripheral surface of a can roller by a pair of patterning material applying devices.

FIG. 11 is an exploded plan view of the thin film laminate formed on the outer peripheral surface of the can roller in Embodiment B-1.

FIG. 12 is a schematic cross-sectional view showing one example of a manufacturing apparatus for performing a method of manufacturing a thin film laminate according to Embodiment B-4 of the present invention.

FIG. 13 is a schematic cross-sectional view showing one example of a manufacturing apparatus for performing a method of manufacturing a thin film laminate according to Embodiment B-5 of the present invention.

FIG. 14 is a schematic cross-sectional view showing main components of an example of a manufacturing apparatus for performing a method of manufacturing a thin film laminate according to Embodiment B-6 of the present invention.

FIG. 15 is a cross-sectional view schematically showing an example of a manufacturing apparatus for performing a conventional method of manufacturing a thin film laminate.

FIG. 16 is a perspective view showing a schematic configuration of a stacked body element obtained by the manufacturing apparatus of FIG.

FIG. 17 is a perspective view showing a schematic configuration of a conventional chip capacitor.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 10 Thin film laminated body 11a, 11b Metal thin film 12 Resin thin film 13a, 13b Through hole 14a, 14b Conductive material 15 Electrode terminal 17 Circuit board 19 Electrode terminal 20 Thin film laminated body 21a, 21b Metal thin film 22 Resin thin film 23a, 23b Through hole 24a , 24b Conductive material 30 Capacitor (array capacitor) 31a, 31b Metal thin film 33a, 33b Through hole 35a, 35b Extraction electrode 35 'Electrode terminal 36 Capacitor element 37 Through electrode 37' Electrode terminal 38 Through hole 39 Conductive material 40 Semiconductor integrated Circuit 41 Circuit board 42 Electrode terminal 45 Semiconductor chip 46 Carrier 47 Electrode terminal 50 Thin film laminate 51a, 51b Metal thin film 52 Resin thin film 53a, 53b Cutout portion 54a, 54b Conductive material 55 Electrode terminal 57 Circuit board 58 Conductive material 59 Electrode terminal 60 Thin film laminate 61a, 61b Metal thin film 62 Resin thin film 63a, 63b Notch 64a, 64b Conductive material 71a, 71b Cut surface 100 Thin film laminate manufacturing device 111 Can roller 112 Resin thin film forming device 114 Metal thin film Forming device (metal material supply source) 115 Vacuum tank 116 Vacuum pump 117 Patterning material removing device 118 Resin curing device 119 Surface treatment device 120 Partition wall 121 Opening 123 Shielding plate 125 Laser processing device 127 Plasma irradiation device 130a, 130b Patterning material applying device ( Nozzle) 131 Micropore 132 Opposing surface 133 Cavity 134 Storage tank 135 Connection path 137 Patterning material 138a, 138b Patterning material stripe pattern 140 Laser patterning device 14 Patterning material application device 211 support 220 patterning material application device 222 micropores 230 patterning material application device 232 micropores 240 resin thin film forming apparatus 241 resin thin film material 242 supply pipe 243a, 243b heated plate 244 trays 245a, 245b, 245c shield

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01G 4/38 H01G 4/24 301G 311 4/38 A (72) Inventor Yoshiaki Kai Kadoma, Osaka Pref. 1006 Matsushita Electric Industrial Co., Ltd. (72) Inventor Yu Odagiri 1006 Oji Kadoma, Kadoma City, Osaka Prefecture F6 Term Matsushita Electric Industrial Co., Ltd. GG28 JJ03 JJ15 JJ23 LL02 LL03 MM05

Claims (45)

[Claims] 1. A thin film laminate in which a plurality of resin thin films and a plurality of metal thin films are stacked, wherein an end of the metal thin film is not exposed to the outside of the thin film laminate. At least one layer has a through-hole in the stacking direction, and the upper and lower metal thin films are electrically connected via the through-hole, and at least one layer of the metal thin film is taken out of the electrode through the through-hole to the outside. A thin film laminate characterized by being capable of: 2. The thin film laminate according to claim 1, wherein the through hole is filled with a conductive material, and the upper and lower metal thin films are electrically connected via the conductive material. 3. The thin film laminate according to claim 1, wherein the upper and lower metal thin films are directly connected via the through hole. 4. A thin film laminate in which a plurality of resin thin films and a plurality of metal thin films are stacked, wherein at least one layer of the resin thin film has a cutout in a part of a periphery thereof, and the cutout A thin film laminate, wherein upper and lower metal thin films are electrically connected to each other via an electrode, and at least one layer of the metal thin film is capable of extracting an electrode to the outside through the cutout portion. 5. The thin film laminate according to claim 4, wherein the cutout portion is filled with a conductive material, and the upper and lower metal thin films are electrically connected via the conductive material. 6. The thin film laminate according to claim 4, wherein the upper and lower metal thin films are directly connected via the cutout. 7. The resin thin film according to claim 4, wherein the resin thin film has a substantially rectangular shape, and the metal thin film is formed to recede on a side of the resin thin film other than the side where the cutout portion is formed. Thin film laminate. 8. A capacitor using a thin film laminate in which a plurality of resin thin films and a plurality of metal thin films are stacked, wherein an end of the metal thin film is not exposed to the outside of the thin film laminate. At least one layer of the resin thin film has a through hole in the stacking direction, and the metal thin films are electrically connected to each other via the through hole so as to have the same potential every other layer, and are connected to the same potential. The capacitor is characterized in that the metal thin film can take out an electrode to the outside through the through hole. 9. The capacitor according to claim 8, wherein the through-hole is filled with a conductive substance, and the metal thin film is electrically connected through the conductive substance. 10. The capacitor according to claim 8, wherein the metal thin film is directly connected via the through hole. 11. The capacitor according to claim 8, wherein the metal thin film is formed on the same surface so as to be divided into a plurality of portions, and a plurality of capacitance forming regions are formed on the same surface. 12. The capacitor according to claim 11, further comprising a through electrode insulated from the metal thin film. 13. A semiconductor integrated circuit having the capacitor according to claim 8 incorporated in a package. 14. A multilayer wiring board formed by bonding the capacitor according to claim 8 on the surface or inside. 15. A capacitor using a thin film laminate in which a plurality of resin thin films and a plurality of metal thin films are stacked, wherein at least one layer of the resin thin film has a cutout in a part of its periphery. The metal thin films are electrically connected to each other through the notch so as to have the same potential every other layer, and the metal thin film connected to the same potential is taken out of the electrode through the notch to the outside. A capacitor characterized by being capable of: 16. The capacitor according to claim 15, wherein the cutout portion is filled with a conductive material, and the metal thin film is electrically connected through the conductive material. 17. The capacitor according to claim 15, wherein the metal thin film is directly connected through the cutout. 18. The resin thin film according to claim 15, wherein the resin thin film has a substantially rectangular shape, and the metal thin film is formed to recede on a side of the resin thin film other than the side on which the notch portion is formed. Capacitors. 19. A method of manufacturing a thin film laminate in which a resin thin film and a metal thin film are alternately stacked, wherein the metal thin film is formed in an area where the resin thin film is formed to be smaller than an area where the resin thin film is formed. Changing the formation position of the metal thin film every time one metal thin film is formed, alternately laminating the resin thin film and the metal thin film, and forming a through hole penetrating the resin thin film and the metal thin film. Forming a thin film laminate, comprising: filling the through hole with a conductive material, and electrically connecting at least a part of the metal thin film to the conductive material. Method. 20. A step of forming a second through-hole penetrating the resin thin film but not penetrating the metal thin film,
Filling the second through hole with a conductive material. 20. The method according to claim 19, further comprising: 21. A step of forming a resin thin film, a step of forming a metal thin film, and a step of forming a through hole penetrating the resin thin film and the metal thin film at a predetermined position as one unit, and forming the unit on a support. A method of manufacturing a thin film laminate in which the resin thin film and the metal thin film are alternately stacked by repeatedly performing the above steps, wherein the metal thin film is formed in a region where the resin thin film is formed to be smaller than an area in which the resin thin film is formed. In addition, the formation position of the metal thin film is changed every time one metal thin film is formed, and the through holes are formed continuously in the stacking direction, and the continuous through holes are filled with a conductive material. And electrically connecting at least a part of the metal thin film to the conductive material. 22. A method of forming a second through-hole penetrating the resin thin film and not penetrating the metal thin film, wherein the second through-hole is formed continuously in a laminating direction.
22. The method according to claim 21, wherein the conductive material is filled in the continuous second through holes. 23. A step of forming a resin thin film, a step of forming a through hole in the resin thin film, and a step of forming a metal thin film on the resin thin film, which are repeatedly performed on a support. A method of manufacturing a thin film laminate by alternately laminating the resin thin film and the metal thin film, wherein the metal thin film is formed in an area where the resin thin film is formed, and smaller than the formation area of the resin thin film. The formation position of the metal thin film is changed every time one metal thin film is formed, and by forming the through-hole in a region where the metal thin film is formed, a plurality of through-holes in the stacking direction are formed through the through-hole. A method for manufacturing a thin film laminate, wherein the metal thin films are electrically connected. 24. After the formation of the resin thin film and before the formation of the metal thin film, a second through hole is further formed in a region of the resin thin film where the metal thin film is not formed, and the second through hole is formed in the stacking direction. 24. The method of manufacturing a thin film laminate according to claim 23, wherein the continuous second through holes are filled with a conductive material. 25. The method of manufacturing a thin film laminate according to claim 19, wherein after forming the metal thin film, a laser light is scanned in a substantially lattice shape to limit a formation region of the metal thin film. 26. After the resin thin film is formed, oil is applied to the surface of the resin thin film in a substantially lattice-like manner, and then a metal thin film is formed to limit a region where the metal thin film is formed.
24. The method for producing a thin film laminate according to 9, 21, or 23. 27. A method of manufacturing the thin film laminate on a support moving in one direction, wherein at least one pair of nozzles having fine holes arranged to face the resin thin film surface is used. The nozzles are reciprocated in a direction substantially perpendicular to the direction of movement of the support so that the trajectory drawn on the resin thin film is approximately 45 degrees with respect to the direction of movement of the support, The method for producing a thin film laminate according to claim 26, wherein the oil is applied. 28. A method for forming a metal thin film in a resin thin film forming region,
While being formed smaller than the formation area of the resin thin film,
Changing the formation position of the metal thin film every time one metal thin film is formed, alternately laminating a resin thin film and a metal thin film, and forming a through hole penetrating the resin thin film and the metal thin film Filling the through-hole with a conductive material,
Electrically connecting every other layer. 29. The method for manufacturing a capacitor according to claim 28, wherein after forming the through-hole, the inner wall surface of the through-hole is subjected to plasma treatment before filling with the conductive material. 30. A step of laminating a resin thin film, a step of forming a metal thin film, and a step of forming a through-hole penetrating through the resin thin film and the metal thin film at a predetermined position, and forming the unit on a support. Forming the metal thin film within the resin thin film formation area smaller than the resin thin film formation area, and forming the metal thin film in one layer at the formation position of the metal thin film. The through holes are formed continuously in the stacking direction, and the continuous through holes are filled with a conductive material, and the metal thin films are electrically connected every other layer. Method of manufacturing a capacitor. 31. The method according to claim 30, wherein an inner wall surface of the through hole is subjected to plasma processing. 32. A step of forming a resin thin film, a step of forming a through hole in the resin thin film, and a step of forming a metal thin film on the resin thin film, which are repeatedly performed on a support. A method of manufacturing a capacitor, wherein the metal thin film is formed in an area where the resin thin film is formed in a region smaller than the formation area of the resin thin film, and a formation position of the metal thin film is changed every time one metal thin film is formed. Forming the through hole in a region where the metal thin film is formed, thereby electrically connecting the metal thin films every other layer through the through hole. . 33. After forming a through hole in the resin thin film,
33. The method for manufacturing a capacitor according to claim 32, wherein the through-hole is subjected to plasma processing before forming the metal thin film. 34. An apparatus for manufacturing a thin-film laminate comprising a circulating support, a metal thin-film forming apparatus and a resin thin-film forming apparatus disposed opposite to the support, and a vacuum chamber for accommodating these apparatuses. An apparatus for manufacturing a thin film laminate, comprising: a laser patterning device for processing a metal thin film downstream of the metal thin film forming device and upstream of the resin thin film forming device. 35. The apparatus for manufacturing a thin film laminate according to claim 34, further comprising a laser processing apparatus for forming holes in the stacking direction. 36. The apparatus for manufacturing a thin film laminate according to claim 35, further comprising a plasma irradiation device downstream of the laser processing device and upstream of the metal thin film forming device. 37. An apparatus for manufacturing a thin-film laminate comprising a circulating support, a metal thin-film forming apparatus and a resin thin-film forming apparatus disposed opposite to the support, and a vacuum chamber for accommodating these apparatuses. A laser processing device for forming a hole in the laminating direction; and an oil application device for applying oil on the resin thin film downstream of the resin thin film forming device and upstream of the metal thin film forming device. And a device for manufacturing a thin film laminate. 38. The apparatus according to claim 37, further comprising a plasma irradiation apparatus downstream of the laser processing apparatus and upstream of the metal thin film forming apparatus. 39. The apparatus for manufacturing a thin film laminate according to claim 37, wherein the oil applying apparatus has at least one pair of nozzles in which fine holes are arranged. 40. An apparatus for manufacturing a thin film laminate comprising: a circulating support; a metal thin film forming apparatus and a resin thin film forming apparatus disposed to face the support; and a vacuum chamber for accommodating these apparatuses. An oil application device that applies oil to the resin thin film downstream of the resin thin film formation device and upstream of the metal thin film formation device, wherein the oil application device includes a nozzle having micro holes arranged therein. An apparatus for manufacturing a thin film laminate, comprising at least one pair. 41. The apparatus for manufacturing a thin film laminate according to claim 39, wherein trajectories drawn by the fine holes of the pair of nozzles on the resin thin film cross each other. 42. The thin film according to claim 39, wherein each of the pair of nozzles reciprocates in a direction substantially perpendicular to the direction of movement of the support at substantially the same speed as the speed of movement of the support. Laminate manufacturing equipment. 43. An angle between a trajectory drawn on the resin thin film by the fine holes of each of the nozzles forming a pair and the moving direction of the support is approximately 45 degrees, and the fine holes of each nozzle are 41. The trajectories according to claim 39 or 40 intersect.
3. The apparatus for manufacturing a thin film laminate according to claim 1. 44. An apparatus for manufacturing a thin-film laminate comprising a circulating support, a metal thin-film forming apparatus and a resin thin-film forming apparatus disposed opposite to the support, and a vacuum chamber for accommodating these apparatuses. A laser processing device for forming a hole in the laminating direction; and an oil application device for applying oil on the resin thin film downstream of the resin thin film forming device and upstream of the metal thin film forming device. An apparatus for manufacturing a thin film laminate, comprising: an apparatus; and a laser patterning apparatus for processing a metal thin film, which is downstream of the metal thin film forming apparatus and upstream of the resin thin film forming apparatus. 45. The apparatus according to claim 44, further comprising a plasma irradiator downstream of the laser processing apparatus and upstream of the metal thin film forming apparatus.