JP2001290441A - Color display device - Google Patents

Color display device

Info

Publication number
JP2001290441A
JP2001290441A JP2000047901A JP2000047901A JP2001290441A JP 2001290441 A JP2001290441 A JP 2001290441A JP 2000047901 A JP2000047901 A JP 2000047901A JP 2000047901 A JP2000047901 A JP 2000047901A JP 2001290441 A JP2001290441 A JP 2001290441A
Authority
JP
Japan
Prior art keywords
display device
light
color
light emitting
self
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000047901A
Other languages
Japanese (ja)
Other versions
JP3670923B2 (en
Inventor
Tsutomu Yamada
努 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2000047901A priority Critical patent/JP3670923B2/en
Publication of JP2001290441A publication Critical patent/JP2001290441A/en
Application granted granted Critical
Publication of JP3670923B2 publication Critical patent/JP3670923B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/352Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels the areas of the RGB subpixels being different
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/121Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Control Of El Displays (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide an EL display device the deterioration which in an early stage caused by applying an excess current on the color pixels having the lowest light emission efficiency among the display pixels having different light emission efficiencies is prevented and which has a longer life. SOLUTION: The EL device having display pixels of each color arranged in a matrix produced by successively depositing an anode 161, a light emission layer 163 and a cathode 166 is manufactured in such a manner that the light emission area of the green light emission region 1G having the highest light emission efficiency is made smaller compared with the light emission area of the red and blue light emission regions 1R, 1B. Thus, the life of the EL display device is increased and the white balance can be easily obtained.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、エレクトロルミネ
ッセンス(E lectroluminescence:以下、「EL」と称
する。)素子等の自発光素子、及び薄膜トランジスタ
(Thin Film Transistor:以下、「TFT」と称す
る。)を備えたカラー表示装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a self-luminous element such as an electroluminescence (hereinafter referred to as "EL") element and a thin film transistor (hereinafter referred to as "TFT"). The present invention relates to a color display device provided.

【0002】[0002]

【従来の技術】近年、EL素子を用いたEL表示装置
が、CRTやLCDに代わる表示装置として注目されて
いる。
2. Description of the Related Art In recent years, an EL display device using an EL element has attracted attention as a display device replacing a CRT or an LCD.

【0003】また、そのEL素子を駆動させるスイッチ
ング素子としてTFTを備えた表示装置も研究開発され
ている。
Further, a display device having a TFT as a switching element for driving the EL element has been researched and developed.

【0004】図7に有機EL表示装置の表示画素付近を
示す平面図を示し、図8(a)に図7中のA−A線に沿
った断面図を示し、図8(b)に図7中のB−B線に沿
った断面図を示す。
FIG. 7 is a plan view showing the vicinity of a display pixel of an organic EL display device, FIG. 8A is a cross-sectional view taken along the line AA in FIG. 7, and FIG. 7 is a sectional view taken along line BB in FIG.

【0005】図7に示すように、ゲート信号線51とド
レイン信号線52とに囲まれた領域に表示画素が形成さ
れている。両信号線の交点付近には第1のTFT30が
備えられており、そのTFT30のソース13sは後述
の保持容量電極線54との間で容量をなす容量電極55
を兼ねるとともに、第2のTFT40のゲート41に接
続されている。第2のTFTのソース43sは有機EL
素子60の陽極61に接続され、他方のドレイン43d
は有機EL素子60に供給される電流源である駆動電源
線53に接続されている。
As shown in FIG. 7, a display pixel is formed in a region surrounded by a gate signal line 51 and a drain signal line 52. A first TFT 30 is provided near the intersection of the two signal lines, and a source 13 s of the TFT 30 has a capacitance electrode 55 forming a capacitance with a storage capacitance electrode line 54 described later.
And is connected to the gate 41 of the second TFT 40. The source 43s of the second TFT is an organic EL
The other drain 43 d is connected to the anode 61 of the element 60.
Are connected to a drive power supply line 53 which is a current source supplied to the organic EL element 60.

【0006】また、TFTの付近には、ゲート信号線5
1と並行に保持容量電極線54が配置されている。この
保持容量電極線54はクロム等から成っている。また、
保持容量電極線54は、TFT30のソース13sに接
続された容量電極55とはゲート絶縁膜12を介して形
成されている。そして、保持容量電極線54と容量電極
55との間で電荷を蓄積して容量を成している。この保
持容量は、第2のTFT40のゲート電極41に印加さ
れる電圧を保持するために設けられている。
A gate signal line 5 is provided near the TFT.
A storage capacitor electrode line 54 is arranged in parallel with the storage capacitor electrode line 1. This storage capacitor electrode line 54 is made of chromium or the like. Also,
The storage capacitor electrode line 54 is formed via the gate insulating film 12 with the capacitor electrode 55 connected to the source 13s of the TFT 30. The charge is accumulated between the storage capacitor electrode line 54 and the capacitor electrode 55 to form a capacitor. This storage capacitor is provided to hold a voltage applied to the gate electrode 41 of the second TFT 40.

【0007】図8に示すように、有機EL表示装置は、
ガラスや合成樹脂などから成る基板又は導電性を有する
基板あるいは半導体基板等の基板10上に、TFT及び
有機EL素子を順に積層形成して成る。ただし、基板1
0として導電性を有する基板及び半導体基板を用いる場
合には、これらの基板10上にSiO2やSiNなどの
絶縁膜を形成した上にTFT及び有機EL素子を形成す
る。
As shown in FIG. 8, the organic EL display device is
A TFT and an organic EL element are sequentially laminated on a substrate 10 such as a substrate made of glass or synthetic resin, a conductive substrate, or a semiconductor substrate. However, substrate 1
When a substrate having conductivity and a semiconductor substrate are used as 0, a TFT and an organic EL element are formed on an insulating film such as SiO 2 or SiN formed on the substrate 10.

【0008】まず、スイッチング用のTFTである第1
のTFT30について説明する。
First, the first TFT, which is a switching TFT, is used.
The TFT 30 will be described.

【0009】図8(a)に示すように、石英ガラス、無
アルカリガラス等からなる絶縁性基板10上に、クロム
(Cr)、モリブデン(Mo)などの高融点金属からな
るゲート電極11を兼ねたゲート信号線51及び保持容
量電極線54を配置する。続いて、ゲート絶縁膜12、
及び多結晶シリコン(以下、「p−Si」と称する。)
膜からなる能動層13が順に積層されている。
As shown in FIG. 8A, a gate electrode 11 made of a high melting point metal such as chromium (Cr) or molybdenum (Mo) is formed on an insulating substrate 10 made of quartz glass, non-alkali glass, or the like. The gate signal line 51 and the storage capacitor electrode line 54 are arranged. Subsequently, the gate insulating film 12,
And polycrystalline silicon (hereinafter, referred to as “p-Si”)
Active layers 13 made of films are sequentially stacked.

【0010】そして、ゲート絶縁膜12、能動層13及
びストッパ絶縁膜14上の全面には、SiO2膜、Si
N膜及びSiO2膜の順に積層された層間絶縁膜15が
形成されており、この層間絶縁膜15のドレイン13d
に対応する位置に形成したコンタクトホールに、Al等
の金属を充填したドレイン電極16が設けられ、更に基
板全面に有機樹脂から成り表面を平坦にする平坦化絶縁
膜17が形成されている。
An SiO 2 film and a Si film are formed on the entire surface of the gate insulating film 12, the active layer 13 and the stopper insulating film 14.
An interlayer insulating film 15 laminated in the order of the N film and the SiO 2 film is formed, and a drain 13 d of the interlayer insulating film 15 is formed.
A drain electrode 16 filled with a metal such as Al is provided in a contact hole formed at a position corresponding to the above, and a flattening insulating film 17 made of an organic resin and flattening the surface is formed on the entire surface of the substrate.

【0011】次に、有機EL素子の駆動用のTFTであ
る第2のTFT40について説明する。
Next, the second TFT 40 which is a TFT for driving the organic EL element will be described.

【0012】図8(b)に示すように、石英ガラス、無
アルカリガラス等からなる絶縁性基板10上に、Cr、
Moなどの高融点金属からなるゲート電極41、ゲート
絶縁膜12、及びp−Si膜からなる能動層43を順に
形成されており、その能動層43には、チャネル43c
と、このチャネル43cの両側にソース43s及びドレ
イン43dが設けられている。そして、ゲート絶縁膜1
2及び能動層43上の全面に、SiO2膜、SiN膜及
びSiO2膜の順に積層された層間絶縁膜15を形成
し、この層間絶縁膜15のドレイン43dに対応した位
置に形成したコンタクトホールに、Al等の金属を充填
して駆動電源に接続された駆動電源線53が配置されて
いる。更に全面に例えば有機樹脂から成り表面を平坦に
する平坦化絶縁膜17を備えている。そして、その平坦
化絶縁膜17及び層間絶縁膜15のソース43sに対応
した位置にコンタクトホールを形成し、このコンタクト
ホールを介してソース43sとコンタクトしたITO
(Indium Tin Oxide)から成る透明電極、即ち有機EL
素子の陽極61を平坦化絶縁膜17上に設けている。
As shown in FIG. 8 (b), Cr, Cr on an insulating substrate 10 made of quartz glass, non-alkali glass or the like.
A gate electrode 41 made of a refractory metal such as Mo, a gate insulating film 12, and an active layer 43 made of a p-Si film are sequentially formed. The active layer 43 has a channel 43c.
A source 43s and a drain 43d are provided on both sides of the channel 43c. And the gate insulating film 1
On the entire surface of the 2 and the active layer 43, SiO 2 film, an SiN film is formed and the SiO 2 film interlayer insulating film 15 which are laminated in this order, the contact hole formed at a position corresponding to the drain 43d of the interlayer insulating film 15 And a driving power supply line 53 filled with a metal such as Al and connected to a driving power supply. Further, a flattening insulating film 17 made of, for example, an organic resin and flattening the surface is provided on the entire surface. Then, a contact hole is formed at a position corresponding to the source 43s of the planarizing insulating film 17 and the interlayer insulating film 15, and the ITO contacted with the source 43s through this contact hole.
(Indium Tin Oxide) transparent electrode, ie, organic EL
An anode 61 of the element is provided on the planarizing insulating film 17.

【0013】有機EL素子60は、ITO等の透明電極
から成る陽極61、MTDATA(4,4,4-tris(3-methy
lphenylphenylamino)triphenylamine)などから成る第
1ホール輸送層、及びTPD(N,N-diphenyl-N,N-di(3-
methylphenyl)-1,1-biphenyl-4,4-diamine)などからな
る第2ホール輸送層のホール輸送層62と、キナクリド
ン(Quinacridone)誘導体を含むBebq2(bis(10-hy
droxybenzo[h]quinolinato)beryllium)などから成る発
光層63及びBebq2などから成る電子輸送層64か
らなる発光素子層65、マグネシウム・インジウム合金
などから成る陰極66がこの順番で積層形成された構造
であり、各画素にそれぞれ設けられ各画素での発光を可
能としている。
The organic EL element 60 includes an anode 61 made of a transparent electrode such as ITO, and an MTDATA (4,4,4-tris (3-methy)
a first hole transport layer composed of, for example, lphenylphenylamino) triphenylamine, and TPD (N, N-diphenyl-N, N-di (3-
a second hole transport layer 62 such as methylphenyl) -1,1-biphenyl-4,4-diamine, etc., and a Bebq 2 (bis (10-hyd) containing a quinacridone derivative.
A light emitting element layer 65 made of a light emitting layer 63 made of, for example, droxybenzo [h] quinolinato) beryllium), a light emitting element layer 65 made of an electron transporting layer 64 made of Bebq 2 or the like, and a cathode 66 made of a magnesium-indium alloy or the like are stacked in this order. In addition, each pixel is provided with each pixel, and enables light emission in each pixel.

【0014】この有機EL素子は、陽極から注入された
ホールと、陰極から注入された電子とが発光層の内部で
再結合し、発光層を形成する有機分子を励起して励起子
が生じる。この励起子が放射失活する過程で発光層から
光が放たれ、この光が透明な陽極から透明絶縁基板を介
して外部へ放出されて発光する。
In this organic EL device, the holes injected from the anode and the electrons injected from the cathode are recombined inside the light emitting layer, and excite the organic molecules forming the light emitting layer to generate excitons. Light is emitted from the light emitting layer during the process of radiation deactivation of the excitons, and the light is emitted from the transparent anode to the outside through the transparent insulating substrate to emit light.

【0015】[0015]

【発明が解決しようとする課題】ところが、各色を発光
する発光層の発光効率は各色ごとに異なっている。
However, the luminous efficiency of the light emitting layer that emits each color is different for each color.

【0016】しかしながら、従来のEL表示装置は、図
9に示すように、複数のゲート信号線51と複数のドレ
イン信号線52との各交点にマトリックス状に配列され
た各色(赤(R),緑(G),青(B))の表示画素の
発光領域1B,1R,1Gの発光面積がみな同一である
ため、発光効率の悪い表示画素において同一輝度を得る
ためには、他の発光効率の良い表示画素よりも大きな電
流を流さなければならなくなり、それによって、その表
示画素の寿命が短くなってしまい、EL表示装置の寿命
も短くなってしまうという欠点があった。
However, in the conventional EL display device, as shown in FIG. 9, each of the colors (red (R), red (R), Since the light-emitting areas 1B, 1R, and 1G of the display pixels of green (G) and blue (B) are all the same, in order to obtain the same luminance in a display pixel having low light-emitting efficiency, another light-emitting efficiency is required. A larger current must be passed than a good display pixel, which has the disadvantage of shortening the life of the display pixel and shortening the life of the EL display device.

【0017】また、発光効率の異なる各色の表示画素の
発光面積を同一とすると、各色の色度の違いによる色バ
ランス(ホワイトバランス)が取りにくく、またそのバ
ランスを取るために電流を多く発光層に供給しなければ
ならないため、多く電流を供給した表示画素のEL素子
の劣化が生じるという欠点があった。
Further, if the light-emitting areas of the display pixels of the respective colors having different luminous efficiencies are the same, it is difficult to obtain a color balance (white balance) due to a difference in chromaticity of each color, and a large current is required to maintain the balance. Therefore, there is a disadvantage that the EL element of the display pixel to which a large amount of current is supplied is deteriorated.

【0018】そこで本発明は、上記の従来の欠点に鑑み
て為されたものであり、ホワイトバランスの制御が容易
で、かつ長寿命のEL素子等の発光素子を有する表示装
置を提供することを目的とする。
Accordingly, the present invention has been made in view of the above-mentioned conventional disadvantages, and an object of the present invention is to provide a display device having a light-emitting element such as an EL element which can easily control white balance and has a long life. Aim.

【0019】[0019]

【課題を解決するための手段】本発明のカラー表示装置
は、表示画素に自発光素子を備えたカラー表示装置にお
いて、各色の表示画素のうちいずれかの色の表示画素の
発光面積が他の色の表示画素の発光面積と異なっている
ものである。
According to a color display device of the present invention, in a color display device having a self-luminous element in a display pixel, a light emitting area of one of the display pixels of each color is different from that of the other. This is different from the light emitting area of the color display pixel.

【0020】また、上述のカラー表示装置は、前記発光
面積は、前記自発光素子の発光効率に応じて設定されて
いるカラー表示装置である。
The above-described color display device is a color display device in which the light emitting area is set according to the light emitting efficiency of the self light emitting element.

【0021】また、上述のカラー表示装置は、前記発光
面積は、前記表示画素に備えられた前記自発光素子の発
光効率と、該自発光素子がそれぞれ発する各色の色度
と、設定する表示装置の白色の色度とに応じて、各色毎
に設定されているカラー表示装置である。
In the above-described color display device, the light-emitting area may be set by setting the luminous efficiency of the self-luminous element provided in the display pixel, the chromaticity of each color emitted by the self-luminous element, and the like. Is a color display device set for each color according to the chromaticity of white.

【0022】また、上述のカラー表示装置は、発光効率
が高い自発光素子の発光面積を、該発光効率が高い自発
光素子よりも低い発光効率の自発光素子の発光面積より
も小さくしたカラー表示装置である。
In the above-described color display device, the light emitting area of the self-luminous element having a high luminous efficiency is smaller than the light emitting area of the self-luminous element having a lower luminous efficiency than the self-luminous element having a high luminous efficiency. Device.

【0023】更に、上述のカラー表示装置は、最も発光
効率が高い自発光素子の発光面積を、他の発光効率の自
発光素子の発光面積よりも小さくしたカラー表示装置で
ある。
Further, the above-described color display device is a color display device in which the light emitting area of the self light emitting element having the highest light emitting efficiency is smaller than the light emitting area of the self light emitting element having the other light emitting efficiency.

【0024】また、上述のカラー表示装置は、前記最も
発光効率が高い自発光素子は緑色を発光する自発光素子
であるカラー表示装置である。
The above-described color display device is a color display device in which the self-luminous element having the highest luminous efficiency is a self-luminous element that emits green light.

【0025】更にまた、上述のカラー表示装置は、最も
発光効率が低い自発光素子の発光面積を、他の発光効率
の自発光素子の発光面積よりも大きくしたカラー表示装
置である。
Further, the above-described color display device is a color display device in which the light-emitting area of the self-luminous element having the lowest luminous efficiency is larger than the light-emitting area of the self-luminous element having the other luminous efficiency.

【0026】また、上述のカラー表示装置は、前記最も
発光効率が低い自発光素子は、赤色又は青色を発光する
自発光素子であるカラー表示装置である。
In the above-described color display device, the self-luminous element having the lowest luminous efficiency is a self-luminous element that emits red or blue light.

【0027】また、上述のカラー表示装置は、発光効率
が低くなるにつれて発光面積が順に大きくしたカラー表
示装置である。
The above-described color display device is a color display device in which the luminous area increases in order as the luminous efficiency decreases.

【0028】また、上述のカラー表示装置は、前記自発
光素子は、エレクトロルミネッセンス表示装置であるカ
ラー表示装置である。
Further, in the above-described color display device, the self-luminous element is a color display device which is an electroluminescence display device.

【0029】[0029]

【発明の実施の形態】本発明のEL表示装置について以
下に説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An EL display device according to the present invention will be described below.

【0030】図1は、本発明のEL表示装置100の平
面図である。
FIG. 1 is a plan view of an EL display device 100 according to the present invention.

【0031】なお、同図には各表示画素が、赤色
(R)、緑色(G)及び青色(B)を発光する場合を示
している。また、R、G、Bの各表示画素の基本的平面
構成は図2に示す。
FIG. 2 shows a case where each display pixel emits red (R), green (G) and blue (B) light. FIG. 2 shows a basic plane configuration of each of the R, G, and B display pixels.

【0032】EL表示装置100には、複数のゲート信
号線51が行(左右)方向に、また複数のドレイン信号
線52と、EL素子に電源からの電力を供給するための
駆動電源線53が列(上下)方向に配置されており、そ
れらの信号線51と、信号線52と、駆動電源線53と
は互いに交差している。
In the EL display device 100, a plurality of gate signal lines 51 are provided in a row (left / right) direction, a plurality of drain signal lines 52, and a drive power supply line 53 for supplying power from a power supply to the EL element. The signal lines 51, the signal lines 52, and the driving power supply lines 53 intersect with each other in the column (up / down) direction.

【0033】それらの交点付近に、両信号線51,52
に接続された第1TFT30、及び駆動電源線53から
電流を有機EL素子160に供給する第2TFT40、
そしてR,G,Bのいずれかを発光する有機EL素子1
60とが形成されている。図1においては図2のR、
G、Bを発光する各表示画素のうちの発光領域のみを表
している(図1中において1R、1B、1Gを付してい
る)。
Near these intersections, both signal lines 51, 52
A second TFT 40 that supplies a current from the driving power supply line 53 to the organic EL element 160,
And an organic EL element 1 that emits light of any of R, G, and B
60 are formed. In FIG. 1, R in FIG.
Only the light emitting area of each of the display pixels that emit G and B light is shown (1R, 1B and 1G are added in FIG. 1).

【0034】図1に示すように、各色の表示画素は基板
上にマトリックス状に配列されており、それらの各表示
画素の発光面積1R、1G、1Bはそれぞれ異なってい
る。具体的には図1の場合には、緑色の発光領域1Gの
発光面積を最も小さくして設けられている。他の色の発
光領域1R,1Bは緑の発光領域1Gよりも広い面積に
形成されている。即ち、同図の場合には、緑色の発光領
域1Gの発光面積を最も小さく形成し、次に赤色の発光
領域1Rの発光面積を大きくし、青色の発光領域1Bの
発光面積を最も大きくした場合を示している。
As shown in FIG. 1, the display pixels of each color are arranged in a matrix on the substrate, and the light emitting areas 1R, 1G, and 1B of the display pixels are different from each other. Specifically, in the case of FIG. 1, the light emitting area of the green light emitting region 1G is provided with the smallest light emitting area. The light emitting regions 1R and 1B of other colors are formed in a larger area than the green light emitting region 1G. That is, in the case of the figure, the light emitting area of the green light emitting area 1G is formed to be the smallest, then the light emitting area of the red light emitting area 1R is increased, and the light emitting area of the blue light emitting area 1B is maximized. Is shown.

【0035】なお、赤色の発光領域1Rと、緑色の発光
領域1Gと、青色の発光領域1Bとの発光面積の大きさ
の順番は、それらの発光材料の発光効率に依存する。従
って、発光面積の大きさの順は上述のG<R<Bに限る
ことなく、使用する発光材料の発光効率によって決定す
る。
The order of the sizes of the light emitting areas of the red light emitting region 1R, the green light emitting region 1G, and the blue light emitting region 1B depends on the light emitting efficiency of the light emitting materials. Therefore, the order of the size of the light emitting area is not limited to the above-described G <R <B, but is determined by the light emitting efficiency of the light emitting material used.

【0036】図3は、それぞれ図2のB−B線に沿った
有機EL表示装置の一表示画素の断面図を示す。
FIG. 3 is a cross-sectional view of one display pixel of the organic EL display device taken along line BB of FIG.

【0037】一表示画素は割り当てられたR、G、Bの
いずれかを発光する有機EL素子160と、ゲート信号
線51によってデータ信号を取り込む第1TFT30
と、この第1TFT30を介してドレイン信号線52か
ら供給されたデータ信号を保持する保持容量SCと、保
持されたドレイン信号に応じて駆動電源線53を介して
電流を有機EL素子160に供給する第2TFT40を
備えている。なお、これらのうち、図2のA−A線に沿
った第1TFT30及び保持容量SCの断面は上述の図
8(a)と共通するため説明を省略する。また、図3に
おいて、第2TFT40は上述の図8(b)と共通す
る。
One display pixel is composed of an organic EL element 160 that emits any of the assigned R, G, and B, and a first TFT 30 that receives a data signal through a gate signal line 51.
And a storage capacitor SC for holding a data signal supplied from the drain signal line 52 via the first TFT 30, and a current is supplied to the organic EL element 160 via the drive power supply line 53 in accordance with the held drain signal. A second TFT 40 is provided. Among them, the cross section of the first TFT 30 and the storage capacitor SC along the line AA in FIG. 2 is common to that in FIG. Also, in FIG. 3, the second TFT 40 is common to the above-described FIG. 8B.

【0038】有機EL素子160は、第2TFT40の
ソース43sに接続された陽極161と、基板上におい
て共通電極として形成された陰極166と、この両電極
の間に有機化合物を配置した発光素子層165とが形成
されて構成されている。発光素子層165は、少なくと
も発光層を含み、単一層でも多層構造でも構成できる
が、一例として、図示するように陽極161側から順に
ホール輸送層162、発光層163、電子輸送層164
から構成される。
The organic EL element 160 includes an anode 161 connected to the source 43s of the second TFT 40, a cathode 166 formed as a common electrode on the substrate, and a light emitting element layer 165 having an organic compound disposed between the two electrodes. Are formed. The light-emitting element layer 165 includes at least a light-emitting layer, and may be configured as a single layer or a multi-layer structure.
Consists of

【0039】また、本実施の形態においては、図1に示
すように基板上にマトリクス状に配置された複数の表示
画素R,G,Bを発光してカラー表示を行うために、R
用、G用、B用の有機EL素子160では、それぞれ異
なる材料、特に発光機能を備える有機化合物として異な
る材料を用いる。
In the present embodiment, a plurality of display pixels R, G, and B arranged in a matrix on the substrate as shown in FIG.
, G, and B organic EL elements 160 use different materials, particularly different materials as organic compounds having a light emitting function.

【0040】例えば、R用有機EL素子160Rでは、
陽極161としてITO、ホール輸送層162として、
MTDATA(第1ホール輸送層)及びTPD(第2ホ
ール輸送層)、発光層163としてはZnPrを2%ド
ープしたBeBq2、陰極166としてMgIn合金を
用いる。
For example, in the R organic EL element 160R,
As the anode 161, ITO, as the hole transport layer 162,
MTDATA (first hole transport layer) and TPD (second hole transport layer), BeBq 2 was 2% doped ZnPr as light-emitting layer 163, using the MgIn alloy as the cathode 166.

【0041】また、G用有機EL素子160Gでは、陽
極161としてITO、ホール輸送層162として、M
TDATA(第1ホール輸送層)及びTPD(第2ホー
ル輸送層)、発光層163としてはBeBq2、陰極1
66としてMgIn合金を用いる。
In the organic EL device for G 160G, ITO is used as the anode 161 and M is used as the hole transport layer 162.
TDATA (first hole transport layer) and TPD (second hole transport layer), BeBq 2 as the light emitting layer 163, cathode 1
66 is an MgIn alloy.

【0042】更に、B用有機EL素子160Bでは、陽
極161としてITO、ホール輸送層162として、M
TDATA(第1ホール輸送層)及びTPD(第2ホー
ル輸送層)、発光層163としては1AZM−Hex、
陰極としてMgIn合金を用いる。
Further, in the organic EL element 160B for B, ITO is used as the anode 161 and M is used as the hole transport layer 162.
TAZ (first hole transport layer), TPD (second hole transport layer), 1AZM-Hex as the light emitting layer 163,
A MgIn alloy is used as a cathode.

【0043】またB用有機EL素子160Bとしては、
他にITO(陽極)/MTDATA(第1ホール輸送
層)・TPD(第2ホール輸送層)/OXD―8(発光
層)/MgIn(陰極)の組み合わせでも良い。
As the organic EL element 160B for B,
Alternatively, a combination of ITO (anode) / MTDATA (first hole transport layer) / TPD (second hole transport layer) / OXD-8 (light emitting layer) / MgIn (cathode) may be used.

【0044】なお、上述の各化合物の略称の正式名称
は、以下の通りである。
The formal names of the compounds described above are as follows.

【0045】 ZnPr:5,10,15,20-tetraphenylporphyrinato zinc MTDATA:4,4,4-tris(3-methylphenylphenyl amino)trip
henylamine TPD:N,N-diphenyl-N,N-di(3-methylphenyl)-1,1-biphe
nyl-4,4-diamine BeBq2:bis(10-hydroxybenzo[h]quinolinato)beryllium 1AZM-Hex:(N,N-disalicylidene-1,6-hexanediaminato)
zinc OXD-8:3-bis[5-(p-dimethylaminophenyl)-1,3,4-oxadi
azol-2-y l]benzene また、R,G,B用有機EL素子160(160R、1
60G、160B)としてこのような材料を採用した場
合、発光効率は素子160G>素子160R>素子16
0Bとなる。有機EL素子160において、発光輝度は
電流(電流密度)に依存性を示す。従って、各表示画素
に同等の電流を供給した場合に、各色が同等な輝度とな
るようにするためには、上述のように素子発光領域面積
を領域1G<領域1R<領域1Bと設定すればよい。
ZnPr: 5,10,15,20-tetraphenylporphyrinato zinc MTDATA: 4,4,4-tris (3-methylphenylphenyl amino) trip
henylamine TPD: N, N-diphenyl-N, N-di (3-methylphenyl) -1,1-biphe
nyl-4,4-diamine BeBq 2 : bis (10-hydroxybenzo [h] quinolinato) beryllium 1AZM-Hex: (N, N-disalicylidene-1,6-hexanediaminato)
zinc OXD-8: 3-bis [5- (p-dimethylaminophenyl) -1,3,4-oxadi
azol-2-yl] benzene Further, the organic EL element 160 for R, G, B (160R, 1
When such a material is adopted as 60G, 160B), the luminous efficiency is as follows: element 160G> element 160R> element 16
0B. In the organic EL element 160, the light emission luminance depends on the current (current density). Therefore, in order to make each color have the same luminance when the same current is supplied to each display pixel, as described above, the area of the element light-emitting region is set as region 1G <region 1R <region 1B. Good.

【0046】次に、各表示画素における発光面積をR,
G,Bで適切な異なった大きさにするための表示画素の
形成方法について説明する。
Next, the light emitting area of each display pixel is represented by R,
A method of forming display pixels for appropriately setting different sizes for G and B will be described.

【0047】その方法としては、(i)有機EL素子の
陽極161の面積をR,G,Bで変える、(ii)陽極1
61の面積は同一として、陽極形成後、発光素子の層形
成前に形成される平坦化絶縁膜167により陽極161
の端部を覆うことで、陽極と発光素子層との接触面積を
R,G,Bで変えるという方法がある。
The method is as follows: (i) changing the area of the anode 161 of the organic EL element by R, G, B;
Assuming that the area of the anode 61 is the same, the anode 161 is formed by the flattening insulating film 167 formed after the anode is formed and before the light emitting element layer is formed.
, The contact area between the anode and the light emitting element layer can be changed by R, G, and B.

【0048】まず、陽極の面積を異ならせて表示画素を
形成する上述の(i)の方法について、図4を参照して
説明する。なお、図4はR,G,B各色の有機EL素子
160の陽極161を形成するためのマスクを表してい
る。
First, the above-mentioned method (i) for forming display pixels with different anode areas will be described with reference to FIG. FIG. 4 shows a mask for forming the anode 161 of the organic EL element 160 for each of R, G, and B colors.

【0049】マスク200Aは、図1に示すように発光
領域面積を1G<1R<1Bとするためのマスクであ
り、目的とする陽極の大きさに応じた開口部201が形
成されている。同図において最も大きい開口部は、発光
効率がR,G,Bのうち最も低い青色の有機EL素子用
陽極のための開口部201B、最も小さな開口部は、最
も発光効率が高い緑色の有機EL素子用陽極のための開
口部201Gである。また、開口部201Bと201G
の中間の大きさの開口部は、発光効率が緑色のEL素子
より低く、青色のEL素子より高い赤色のEL素子用陽
極のための開口部201Rである。
As shown in FIG. 1, the mask 200A is a mask for setting the area of the light emitting region to 1G <1R <1B, and has openings 201 corresponding to the size of the target anode. In the figure, the largest opening is the opening 201B for the anode for a blue organic EL element having the lowest luminous efficiency among R, G, and B, and the smallest opening is the green organic EL having the highest luminous efficiency. An opening 201G for an element anode. Also, the openings 201B and 201G
The opening having an intermediate size of the opening 201R is an opening 201R for a red EL element anode having lower luminous efficiency than the green EL element and higher than the blue EL element.

【0050】以下に、図3(a)を参照して、(i)の
方法について具体的に説明する。
Hereinafter, the method (i) will be described in detail with reference to FIG.

【0051】第2TFT40を形成し、このTFT40
を覆うように層間絶縁膜15,TFT40のドレイン4
3dと接続された駆動電源線53、基板全面を覆う平坦
化絶縁膜17を形成し、この平坦化絶縁膜17と層間絶
縁膜15を貫通するようにTFT40のソース43s対
応領域にコンタクトホールを形成し、このコンタクトホ
ール及び平坦化絶縁膜17の全面を覆うように透明電極
(陽極)材料であるITOをスパッタ法によって形成す
るまでの工程は、上述の図8(b)の構成と共通する。
A second TFT 40 is formed.
To cover the interlayer insulating film 15 and the drain 4 of the TFT 40.
A driving power supply line 53 connected to 3d and a planarizing insulating film 17 covering the entire surface of the substrate are formed, and a contact hole is formed in a region corresponding to the source 43s of the TFT 40 so as to penetrate the planarizing insulating film 17 and the interlayer insulating film 15. The steps up to the formation of ITO as a transparent electrode (anode) material by sputtering so as to cover the contact holes and the entire surface of the planarizing insulating film 17 are common to the above-described configuration of FIG. 8B.

【0052】ITOを形成した後、次にレジストを塗布
し、図4に示すマスク200Aを用いて、露光、現像工
程を施すことにより、マスク200Aの開口部201
R,201G,201Bに対応した位置にのみレジスト
パターンが残り、このレジストパターンをエッチングマ
スクとして用いてITOを所定エッチャントにてエッチ
ングして除去する。これにより、マスク200Aの開口
部201R,201G,201Bに対応した大きさ及び
位置にITOパターンが形成され、その結果、陽極16
1は、R,G,B毎に異なる大きさとなる。
After the formation of the ITO, a resist is next applied, and exposure and development steps are performed using the mask 200A shown in FIG.
A resist pattern remains only at positions corresponding to R, 201G, and 201B, and ITO is removed by etching with a predetermined etchant using this resist pattern as an etching mask. As a result, an ITO pattern is formed at a size and position corresponding to the openings 201R, 201G, and 201B of the mask 200A.
1 has a different size for each of R, G, and B.

【0053】有機EL素子の陽極161を各表示画素領
域に形成した後、R,G,B毎に異なる上述の有機化合
物材料を用いてR,G,B用の発光素子層165をそれ
ぞれ形成する。なお、有機EL素子において、発光素子
層に用いられる材料は比較的高抵抗であり、発光領域は
発光素子層のうち陽極と陰極との層間に挟まれた領域に
限られる。
After the anode 161 of the organic EL element is formed in each display pixel area, the R, G, and B light emitting element layers 165 are formed using the above-described organic compound materials different for each of R, G, and B. . In the organic EL element, the material used for the light-emitting element layer has a relatively high resistance, and the light-emitting region is limited to a region between the anode and the cathode in the light-emitting element layer.

【0054】従って、発光素子層は陽極形成領域と同一
でも、また陽極形成領域より大きくても良いが、発光素
子層上に形成される陰極と、陽極とが、陽極端部におい
て短絡することを防止するため、本実施の形態において
は、図3(a)に示すように、発光素子層はR、G、B
とも陽極を覆うようにこの陽極面積より大きく設定して
いる。もちろん、陽極と陰極との間で短絡が起こらない
ように他の処置を施せば、必ずしも発光素子層165を
陽極より大きくする必要はない。他の処置とは、例えば
後述する図3(b)のように平坦化絶縁膜167を形成
すること等である。
Therefore, the light emitting element layer may be the same as the anode forming area or larger than the anode forming area. However, it is necessary that the cathode formed on the light emitting element layer and the anode be short-circuited at the anode end. In order to prevent this, in the present embodiment, as shown in FIG.
Both are set larger than this anode area so as to cover the anode. Needless to say, the light-emitting element layer 165 does not necessarily need to be larger than the anode if other measures are taken to prevent a short circuit between the anode and the cathode. Other treatments include, for example, forming a planarizing insulating film 167 as shown in FIG.

【0055】ここで、上述のようにR用有機EL素子:
ITO//MTDATA/TPD//BeBq2+ZnPr2%//MgIn、B用有機EL
素子:ITO//MTDATA/TPD//BeBq2//MgIn、G用有機EL素
子:ITO//MTDATA/TPD //1AZM-Hex//MgIn又はITO//MTDAT
A/TPD//OXD-8//MgInの構成を採用した場合、第1及び第
2ホール輸送層から構成されるホール輸送層162とし
てR,G,Bで同一材料が用いられており、ホール輸送
層162の形成に際してはR,G,Bの区別無く、対応
する陽極上161及び平坦化絶縁膜17上の全面に形成
すればよい。
Here, as described above, the organic EL element for R:
ITO // MTDATA / TPD // BeBq 2 + ZnPr2% // MgIn, Organic EL for B
Element: ITO // MTDATA / TPD // BeBq 2 // MgIn, organic EL element for G: ITO // MTDATA / TPD // 1AZM-Hex // MgIn or ITO // MTDAT
When the structure of A / TPD // OXD-8 // MgIn is adopted, the same material is used for R, G, and B as the hole transport layer 162 composed of the first and second hole transport layers. When forming the transport layer 162, it is sufficient to form the transport layer 162 on the entire surface on the corresponding anode 161 and the planarization insulating film 17 without distinction of R, G, and B.

【0056】また、発光層163の形成にあたっては、
上述のように本実施の形態においては、R,G,B用そ
れぞれに異なる発光材料を用いており、各色用の発光層
163の材料を変更して順に形成していく。各色の発光
層163の形成に際しては、図5に示すようなマスク2
00Lを用いる。このマスク200Lはタングステン
(W)等の金属であったり、あるいはシリコンなどが材
料として用いられる。
In forming the light emitting layer 163,
As described above, in this embodiment, different light-emitting materials are used for R, G, and B, and the materials of the light-emitting layers 163 for each color are changed and formed sequentially. When forming the light emitting layer 163 of each color, the mask 2 as shown in FIG.
Use 00L. The mask 200L is made of a metal such as tungsten (W) or silicon.

【0057】同図に示すように、マスク200Lは基板
上に同一色の発光層を形成するための開口部202を有
しており、それらの開口部202はマスク200Lの位
置をシフトさせることにより図4に示したマスク200
Aを用いて形成した各色の陽極と重畳するように設けら
れている。このとき、発光層の面積は陽極と同じ大きさ
であっても良く、陽極を覆って陽極よりも大きい面積で
あっても良く、本実施の形態においては図3(a)に示
すようにR,G,Bいずれの陽極より大きい大きさに設
定している。
As shown in the figure, the mask 200L has openings 202 for forming light emitting layers of the same color on the substrate, and these openings 202 are formed by shifting the position of the mask 200L. Mask 200 shown in FIG.
A is provided so as to overlap with the anode of each color formed using A. At this time, the area of the light-emitting layer may be the same size as the anode, or may be larger than the anode covering the anode. In this embodiment, as shown in FIG. , G, and B are set to be larger than any of the anodes.

【0058】例えば、青色を発光する発光層を蒸着する
際には、蒸着前にマスク200Lを青色の発光層を形成
予定領域にマスク200Lの開口部202が位置するよ
うに位置合わせして、ホール輸送層162上に密着させ
て配置する。その後、青色発光材料を蒸着することによ
って開口部202に応じた島状の青色発光層を形成す
る。
For example, when depositing a light emitting layer that emits blue light, the mask 200L is positioned before the evaporation so that the opening 202 of the mask 200L is positioned in the region where the blue light emitting layer is to be formed. It is arranged in close contact with the transport layer 162. After that, an island-shaped blue light-emitting layer corresponding to the opening 202 is formed by depositing a blue light-emitting material.

【0059】赤色発光層の蒸着にはマスク200Lを横
方向にシフトさせ図5のマスク200Lの開口部202
を赤色発光層の形成予定領域に位置合わせして用い、同
様にして緑色発光層の蒸着に際してはマスク200Lの
開口部202を緑色発光層の形成予定領域に位置合わせ
して用いる。このような手順により、R,G,Bで共に
材料は異なるが同じ面積の発光層を順次島状にホール輸
送層162上に形成する。こうして各色の発光層163
を形成することができる。
For vapor deposition of the red light emitting layer, the mask 200L is shifted in the horizontal direction, and the opening 202 of the mask 200L in FIG.
Is used in alignment with the region where the red light emitting layer is to be formed. Similarly, when depositing the green light emitting layer, the opening 202 of the mask 200L is aligned with the region where the green light emitting layer is to be formed and used. According to such a procedure, light-emitting layers having different materials for R, G, and B, but having the same area are sequentially formed on the hole transport layer 162 in an island shape. Thus, the light emitting layer 163 of each color
Can be formed.

【0060】発光層163を形成後、電子輸送層164
を必要とするEL素子160に対しては、発光層163
上及びホール輸送層162上に電子輸送層164を蒸着
形成形成することで電子輸送層164を形成する。
After forming the light emitting layer 163, the electron transport layer 164 is formed.
Light emitting layer 163 for the EL element 160 requiring
The electron transport layer 164 is formed by vapor deposition of the electron transport layer 164 on the hole transport layer 162.

【0061】以上のような手法により得られた発光素子
層165を覆うようにマグネシウム・インジウム合金な
どをスパッタ法によって堆積し陰極166を形成する。
これにより、R,G,B毎で陽極の面積が異なり素子発
光面積がR,G,B毎に所望の面積となった有機EL素
子を用いた表示装置が得られる。
A cathode 166 is formed by depositing a magnesium-indium alloy or the like by a sputtering method so as to cover the light emitting element layer 165 obtained by the above method.
Thus, it is possible to obtain a display device using an organic EL element in which the area of the anode is different for each of R, G, and B, and the light emitting area of the element is a desired area for each of R, G, and B.

【0062】次に、陽極の面積は同じで陽極と発光層と
の間に形成した平坦化絶縁膜で陽極と発光層との接触面
積を異ならせる方法(上述の(ii))について説明す
る。
Next, a method of making the contact area between the anode and the light-emitting layer different with the planarizing insulating film formed between the anode and the light-emitting layer with the same area of the anode (the above (ii)) will be described.

【0063】図3(b)に示すように、陽極161上に
設ける発光素子層165の陽極161の段差による断線
することを防止するためには、陽極161の周縁部を平
坦化絶縁膜167で覆うことが好適である。このような
構成の有機EL素子の場合、実質的に発光する領域、即
ち発光面積は発光素子層165が陽極161と接触して
いる面積であり、この平坦化絶縁膜167によって覆わ
れた陽極161の周縁部は実質的に発光しない領域とな
る。
As shown in FIG. 3B, in order to prevent disconnection of the light emitting element layer 165 provided on the anode 161 due to a step of the anode 161, the peripheral edge of the anode 161 is covered with a flattening insulating film 167. It is preferred to cover. In the case of the organic EL element having such a structure, the light emitting region, that is, the light emitting area is substantially the area where the light emitting element layer 165 is in contact with the anode 161, and the anode 161 covered with the planarizing insulating film 167 is provided. Is a region that does not emit light substantially.

【0064】従って、平坦化絶縁膜167で覆う陽極1
61の周縁部の面積のみ各色で異ならせることにより、
各色の表示画素の発光面積を異ならせることができる。
Therefore, the anode 1 covered with the planarizing insulating film 167
By making only the area of the periphery of 61 different for each color,
The light emitting area of each color display pixel can be different.

【0065】このように各色の表示画素の発光面積を異
ならせることによっても、EL素子の長寿命化が図れ
る。
By making the emission areas of the display pixels of each color different, the life of the EL element can be extended.

【0066】なお、本実施の形態においては、発光効率
がG>R>Bの場合に、表示画素の発光面積をG<R<
Bとし、各色でそれぞれ発光面積をこの順に異なるもの
とした場合を例にして説明したが、本発明はこれに限定
するものはない。例えば、発光効率が同じくG>R>B
の場合において、発光面積はG≒R<Bとしても良い
し、G<R≒Bとしても良い。
In this embodiment, when the luminous efficiency is G>R> B, the luminous area of the display pixel is set to G <R <B.
B is described as an example in which the light emission area is different for each color in this order, but the present invention is not limited to this. For example, the luminous efficiency is also G>R> B
In this case, the light emitting area may be set to G ≒ R <B or G <R ≒ B.

【0067】また、陽極161の周縁部に平坦化絶縁膜
167を配置したが、平坦化絶縁膜に限るものではな
く、絶縁性を有するものであればよい。
Although the flattening insulating film 167 is arranged on the periphery of the anode 161, the invention is not limited to the flattening insulating film, and any other insulating material may be used.

【0068】以上のようにすることにより、電流量が大
きいほど劣化が早まる傾向を示す有機EL素子におい
て、低発光効率の表示画素のEL素子発光層に、他の色
の発光層よりも大きい電流を流すことで各色が同様に明
るく光るようにさせると低発光効率の素子が選択的に劣
化するといった不具合が発生することが防止でき、どの
色の有機EL素子も同様の期間劣化を防ぐことが可能と
なり、その結果、表示装置全体としての寿命を長くでき
る。
As described above, in the organic EL element which tends to deteriorate faster as the amount of current increases, the EL element luminous layer of the display pixel having low luminous efficiency has a larger current than the luminous layers of other colors. When each color is made to emit light in the same manner by flowing light, it is possible to prevent a problem that the element having low luminous efficiency is selectively deteriorated, and it is possible to prevent the organic EL element of any color from being similarly deteriorated during the same period. As a result, the life of the display device as a whole can be extended.

【0069】面積比の一例としては、次のようなものが
挙げられる。
Examples of the area ratio are as follows.

【0070】例えば、発光する緑、赤、青の各色光の輝
度を1:1:1とする場合、供給電流を一定とすると、
発光効率の比が、10:3.8:1.8の場合である。
各色とも輝度“1”を達成するために必要な各色の発光
面積の比は、1/10:1/3.8:1/1.8=1:
2.6:5.6である。
For example, when the luminance of each of the green, red, and blue light beams to be emitted is 1: 1: 1, if the supply current is constant,
This is the case where the ratio of the luminous efficiency is 10: 3.8: 1.8.
The ratio of the emission area of each color required to achieve the luminance “1” for each color is 1/10: 1 / 3.8: 1 / 1.8 = 1: 1.
2.6: 5.6.

【0071】このような発光面積比にすることにより、
発光効率が最も悪い色の青色だけに大きな電流を流すこ
となく、R,G,Bを同様な輝度で発光させることがで
きるので発光層の寿命を長くすることが可能となる。
By setting such a light emitting area ratio,
R, G, and B can emit light with the same luminance without passing a large current only to the blue color having the lowest luminous efficiency, so that the life of the light emitting layer can be extended.

【0072】次に、面積比の他の例について説明する。
この例は、発光効率の低い色の有機EL素子の劣化を防
止すると共に、フルカラー表示におけるホワイトバラン
スの制御を考慮した場合の例である。
Next, another example of the area ratio will be described.
This example is an example in which deterioration of an organic EL element of a color having low luminous efficiency is prevented and control of white balance in full-color display is considered.

【0073】自発光素子である有機EL素子を表示画素
に用いてカラー表示を行う場合、各R,G,Bそれぞれ
の有機EL素子からの発光光を加算することにより白が
表示される。
When color display is performed by using organic EL elements, which are self-luminous elements, as display pixels, white is displayed by adding the light emitted from each of the R, G, and B organic EL elements.

【0074】目標として設定する白色を、NTSC方式
の基準白色光源(C光源)の色度座標(x、y)=
(0.31,0.32)とする場合に、このような白色
の輝度100%を達成するためにR,G,Bに要求され
る輝度は、各有機EL素子の発するR,G,Bの各色の
色度が、図6の上段に示すような座標で表される場合
に、例えば、25%:46%:29%というように決ま
る。これは輝度比で示すと、R:G:B=0.54:
1:0.63となる。
The white color set as the target is represented by the chromaticity coordinates (x, y) of the NTSC standard white light source (C light source) =
In the case of (0.31, 0.32), the luminance required for R, G, B in order to achieve such white luminance of 100% is R, G, B emitted from each organic EL element. When the chromaticity of each color is represented by coordinates as shown in the upper part of FIG. 6, for example, it is determined as 25%: 46%: 29%. This is represented by a luminance ratio, where R: G: B = 0.54:
1: 0.63.

【0075】また、有機EL素子の各色における発光効
率の比が、上述の例と同様にG,R,Bについて、1
0:3.8:1.8の場合、G,R,Bの輝度比G:
R:B=1:0.54:0.63を達成するために必要
な発光面積の比は、G:R:B=1/10:0.54/
3.8:0.63/1.8=1:14.2:35という
ことになる。
The ratio of the luminous efficiency of each color of the organic EL element is set to 1 for G, R, and B in the same manner as in the above example.
In the case of 0: 3.8: 1.8, the luminance ratio G, R, B:
The ratio of the emission area required to achieve R: B = 1: 0.54: 0.63 is G: R: B = 1/10: 0.54 /
3.8: 0.63 / 1.8 = 1: 14.2: 35.

【0076】このように、R,G,Bの色度と目標白色
の色度、そして各色の発光効率を考慮し、例えば発光領
域の面積比が上述の値になるように、R,G,B用の発
光面積を設定すれば、各表示画素の有機EL素子に同量
の電流を供給した場合に、白の輝度100%を達成する
ことが可能となる。
As described above, in consideration of the chromaticity of R, G, and B, the chromaticity of the target white, and the luminous efficiency of each color, for example, the area ratio of the luminous region is set to the above value so that the luminous area becomes the above value. By setting the light emitting area for B, it is possible to achieve 100% white luminance when the same amount of current is supplied to the organic EL element of each display pixel.

【0077】なお、目標とする白色の色度又は各色の色
度が変わると、上述のように輝度比によって決まる各色
の発光面積の順番も変わることになる。
When the chromaticity of the target white color or the chromaticity of each color changes, the order of the light emission areas of the respective colors determined by the luminance ratio also changes as described above.

【0078】以上のように、このような方法により面積
比を決定したEL表示装置では、各色の輝度バランスが
発光面積で調整されているので、ホワイトバランスの制
御が非常に容易であるとともに、白を表示するために特
定の色のEL素子にのみ多く電流を流す必要が無くな
り、表示装置全体としての寿命を向上することも可能と
なる。
As described above, in the EL display device in which the area ratio is determined by such a method, since the luminance balance of each color is adjusted by the light emitting area, the white balance control is very easy and the white balance is very easy. It is not necessary to supply a large amount of current only to the EL element of a specific color in order to display, and the life of the display device as a whole can be improved.

【0079】なお、使用する材料が異なれば有機EL素
子の発するR,G,Bの光の色度座標値が異なるため、
R,G,Bの輝度比もそれに応じて変わり、また発光効
率も異なるため、発光面積比はこれに応じて決まり、上
述の数値のものに限られない。
If the materials used are different, the chromaticity coordinate values of the R, G, and B light emitted from the organic EL element are different.
Since the luminance ratio of R, G, and B changes accordingly, and the luminous efficiency also changes, the luminous area ratio is determined accordingly and is not limited to the above numerical values.

【0080】また、本発明ではR,G,Bの有機EL素
子にそれぞれ同一電流を供給した場合に、常時白色10
0%が達成されるように素子の発光面積が設定されてい
る構成に限るものではない。例えば、各表示画素を駆動
する図示しないドライバ等を更に考慮した上で、装置全
体としてホワイトバランスの制御が容易で、かつ発光効
率の低い素子に選択的に負荷がかかることを防止できる
ように、R,G,Bの各有機EL素子の発光面積を設定
しても良い。
In the present invention, when the same current is supplied to the R, G, and B organic EL elements, a white
The invention is not limited to the configuration in which the light emitting area of the element is set so as to achieve 0%. For example, with further consideration of a driver (not shown) that drives each display pixel, it is easy to control the white balance as a whole device, and to prevent a load from being selectively applied to an element having low luminous efficiency. The emission area of each of the R, G, and B organic EL elements may be set.

【0081】更に上述の実施の形態においては、有機E
L表示装置を例に挙げて説明したが、本発明はそれに限
定されるものではなく、発光素子として有機EL素子に
代えて、発光材料に向き発光材料が用いられた無機EL
素子を用いた無機EL表示装置や、2つの電極の間に発
光層として蛍光層を備える蛍光表示管(VFD:Vacuum
Fluorescent Display)等においても有機EL表示装置
と同様の効果が得られる。
Further, in the above embodiment, the organic E
Although the present invention has been described with reference to the L display device as an example, the present invention is not limited to this, and an inorganic EL in which a light emitting material is used instead of an organic EL element as a light emitting element is used.
An inorganic EL display device using an element or a fluorescent display tube (VFD: Vacuum) having a fluorescent layer as a light emitting layer between two electrodes
Fluorescent Display) can provide the same effect as the organic EL display device.

【0082】VFDは、図3で示したEL素子と同様
に、絶縁性基板10上に形成したTFTを用いて駆動す
る。VFDは、図3において、陽極161の形成までの
工程及び構造はEL素子と同じである。ただし、陽極1
61はAl等の金属から成っている。その上には蛍光物
質を堆積し、その上方にはグリッド及び陰極(フィラメ
ント)が配置されている。陽極及び陰極で囲まれる間隙
は真空状態である。
The VFD is driven by using a TFT formed on the insulating substrate 10, as in the case of the EL element shown in FIG. In FIG. 3, the steps and structure of the VFD up to the formation of the anode 161 are the same as those of the EL element. However, anode 1
Reference numeral 61 is made of a metal such as Al. A phosphor is deposited thereon, and a grid and a cathode (filament) are arranged above the phosphor. The gap surrounded by the anode and the cathode is in a vacuum state.

【0083】フィラメントから発せられた熱電子がグリ
ッドで整流化されて、陽極上の蛍光物質に衝突して発光
する。こうして自ら光を発する。所定の色を発する蛍光
物質を選択することにより所定の色を発することができ
る。また、発光面積は、上述のEL素子の場合と同様に
決めればよい。即ち、蛍光物質の発光効率に応じて発光
面積を決定すれば良い。
The thermoelectrons emitted from the filament are rectified by the grid and collide with the fluorescent material on the anode to emit light. It emits light by itself. A predetermined color can be emitted by selecting a fluorescent substance that emits a predetermined color. The light emitting area may be determined in the same manner as in the case of the above-described EL element. That is, the emission area may be determined according to the emission efficiency of the fluorescent substance.

【0084】なお、本発明において、表示画素の発光面
積とは、表示画素の発光素子が実際に発光する領域の面
積である。
In the present invention, the light emitting area of the display pixel is the area of the region where the light emitting element of the display pixel actually emits light.

【0085】即ち、図3(b)に示すように、陽極の厚
みによる段差に起因して発光層が段切れを起こして陰極
と短絡してしまうことを防止するために設けた平坦化絶
縁膜が、陽極の周辺部を覆っている場合には、陽極と発
光素子層とが直接接することにより実質的に発光する領
域の面積をいう。
That is, as shown in FIG. 3B, a flattening insulating film provided to prevent the light emitting layer from being disconnected due to a step due to the thickness of the anode and being short-circuited to the cathode. However, when it covers the periphery of the anode, it means the area of a region that emits light substantially when the anode and the light emitting element layer are in direct contact with each other.

【0086】更に言い換えると、有機EL素子の発光素
子層が、陽極又は陰極の少なくとも一方の電極と直接接
触する面積のうち、小さい方の面積をいう。
In other words, the smaller one of the areas in which the light emitting element layer of the organic EL element is in direct contact with at least one of the anode and the cathode.

【0087】また、本実施の形態においては、各表示画
素の数を4行X7列の場合について示したが、本発明は
それに限定されるものではなく、VGA(640X48
0)、SVGA(800X600)、XGA(1024
X768)、SXGA(1280X1024)など、任
意の表示画素数に適用可能である。
In this embodiment, the number of display pixels is 4 rows × 7 columns. However, the present invention is not limited to this, and VGA (640 × 48
0), SVGA (800 × 600), XGA (1024
X768), SXGA (1280 × 1024) and the like can be applied to an arbitrary number of display pixels.

【0088】また、各陽極の形状は「L」字の場合を示
したが、本発明はこれに限定されるものではなく、長方
形でも、正方形でも良く、形状は発光層の発光に支障の
ない形状であれば制限はない。
Although the shape of each anode is shown as "L", the present invention is not limited to this. The shape may be rectangular or square, and the shape does not hinder the light emission of the light emitting layer. There is no limitation as long as it has a shape.

【0089】また、上述の実施の形態においては、各色
の表示画素の配列がストライプ配列の場合について説明
したが、本発明はそれに限定されるものではなく、デル
タ配列、ダイアゴナル配列でも同様の効果が得られる。
Further, in the above-described embodiment, the case where the arrangement of the display pixels of each color is the stripe arrangement has been described. However, the present invention is not limited to this, and the same effect can be obtained even in the delta arrangement and the diagonal arrangement. can get.

【0090】更に、上述の実施の形態においては、ゲー
ト電極が能動層の下層に配置されたいわゆるボトムゲー
ト型TFTの場合を説明したが、本発明はそれに限定さ
れるものではなく、ゲート電極が能動層の上層にあるい
わゆるトップゲート型TFTであっても同様の効果が得
られる。
Further, in the above-described embodiment, the case of a so-called bottom gate type TFT in which the gate electrode is arranged below the active layer has been described. However, the present invention is not limited to this, and the gate electrode is not limited thereto. The same effect can be obtained even with a so-called top gate type TFT located above the active layer.

【0091】[0091]

【発明の効果】本発明のカラー表示装置によれば、自発
光素子を備えた表示装置の長寿命化を図ることができる
とともに、容易にホワイトバランスを制御することが可
能なカラー表示装置を得ることができる。
According to the color display device of the present invention, it is possible to extend the life of the display device having the self-luminous element and obtain a color display device capable of easily controlling the white balance. be able to.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明のEL表示装置の各色の表示画素の発光
領域を示す平面図である。
FIG. 1 is a plan view showing a light emitting area of a display pixel of each color of an EL display device of the present invention.

【図2】本発明のEL表示装置の表示画素付近を表す平
面図である。
FIG. 2 is a plan view showing the vicinity of a display pixel of the EL display device of the present invention.

【図3】本発明のEL表示装置の断面図である。FIG. 3 is a cross-sectional view of the EL display device of the present invention.

【図4】本発明のEL表示装置の陽極を作製するための
マスクの平面図である。
FIG. 4 is a plan view of a mask for manufacturing an anode of the EL display device of the present invention.

【図5】本発明のEL表示装置の発光層を作製するため
のマスクの平面図である。
FIG. 5 is a plan view of a mask for manufacturing a light emitting layer of the EL display device of the present invention.

【図6】白表示の場合のR,G,Bの発光輝度比の求め
方の説明図である。
FIG. 6 is an explanatory diagram of a method of obtaining emission luminance ratios of R, G, and B in the case of white display.

【図7】従来のEL表示装置の表示画素付近を表す平面
図である。
FIG. 7 is a plan view showing the vicinity of a display pixel of a conventional EL display device.

【図8】従来のEL表示装置の断面図である。FIG. 8 is a sectional view of a conventional EL display device.

【図9】従来のEL表示装置の各色の表示画素の発光領
域を示す平面図である。
FIG. 9 is a plan view showing a light emitting region of a display pixel of each color of a conventional EL display device.

【符号の説明】[Explanation of symbols]

1B 青色の表示画素の発光領域 1R 赤色の表示画素の発光領域 1G 緑色の表示画素の発光領域 30 第1のTFT 40 第2のTFT 51 ゲート信号線 52 ドレイン信号線 53 駆動電源線 54 保持容量電極線 100 EL表示装置 161 陽極 163 発光層 165 発光素子層 166 陰極 200A 陽極形成用マスク 200L 発光層形成用マスク 201R 陽極形成用マスクの開口部 201G 陽極形成用マスクの開口部 201B 陽極形成用マスクの開口部 202 発光層形成用マスクの開口部 1B Light-emitting area of blue display pixel 1R Light-emitting area of red display pixel 1G Light-emitting area of green display pixel 30 First TFT 40 Second TFT 51 Gate signal line 52 Drain signal line 53 Driving power line 54 Storage capacitance electrode Line 100 EL display 161 Anode 163 Emission layer 165 Emission layer 166 Cathode 200A Anode formation mask 200L Emission layer formation mask 201R Anode formation mask opening 201G Anode formation mask opening 201B Anode formation mask opening Unit 202 Opening of Mask for Forming Light Emitting Layer

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H05B 33/14 H05B 33/14 A Fターム(参考) 3K007 AB04 AB11 AB17 BA06 CB01 DA01 DB03 EB00 5C080 AA06 BB05 CC03 DD05 EE30 FF11 JJ01 JJ06 5C094 AA08 AA37 AA48 AA56 BA03 BA12 BA27 CA19 CA24 DA13 DB01 DB04 EA04 EA05 EB02 FA01 FB01 FB14 GA10 ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H05B 33/14 H05B 33/14 A F term (Reference) 3K007 AB04 AB11 AB17 BA06 CB01 DA01 DB03 EB00 5C080 AA06 BB05 CC03 DD05 EE30 FF11 JJ01 JJ06 5C094 AA08 AA37 AA48 AA56 BA03 BA12 BA27 CA19 CA24 DA13 DB01 DB04 EA04 EA05 EB02 FA01 FB01 FB14 GA10

Claims (10)

【特許請求の範囲】[Claims] 【請求項1】 表示画素に自発光素子を備えたカラー表
示装置において、各色の表示画素のうちいずれかの色の
表示画素の発光面積が他の色の表示画素の発光面積と異
なっていることを特徴とするカラー表示装置。
In a color display device having a self-light-emitting element in a display pixel, a light-emitting area of a display pixel of any one of display pixels of each color is different from a light-emitting area of a display pixel of another color. A color display device characterized by the above-mentioned.
【請求項2】 前記発光面積は、前記自発光素子の発光
効率に応じて設定されていることを特徴とする請求項1
に記載のカラー表示装置。
2. The light-emitting area according to claim 1, wherein the light-emitting area is set according to the light-emitting efficiency of the light-emitting element.
2. The color display device according to 1.
【請求項3】 前記発光面積は、前記表示画素に備えら
れた前記自発光素子の発光効率と、該自発光素子がそれ
ぞれ発する各色の色度と、設定する表示装置の白色の色
度とに応じて、各色毎に設定されていることを特徴とす
る請求項1又は2に記載のカラー表示装置。
3. The light-emitting area includes a luminous efficiency of the self-luminous element provided in the display pixel, a chromaticity of each color emitted by the self-luminous element, and a chromaticity of white of a display device to be set. The color display device according to claim 1, wherein the color display device is set for each color accordingly.
【請求項4】 発光効率が高い自発光素子の発光面積
を、該発光効率が高い自発光素子よりも低い発光効率の
自発光素子の発光面積よりも小さくしたことを特徴とす
る請求項2又は3に記載のカラー表示装置。
4. The light-emitting area of a self-luminous element having a high luminous efficiency is smaller than the light-emitting area of a self-luminous element having a lower luminous efficiency than a self-luminous element having a high luminous efficiency. 4. The color display device according to 3.
【請求項5】 最も発光効率が高い自発光素子の発光面
積を、他の発光効率の自発光素子の発光面積よりも小さ
くしたことを特徴とする請求項2又は3に記載のカラー
表示装置。
5. The color display device according to claim 2, wherein a light-emitting area of the self-luminous element having the highest luminous efficiency is smaller than a light-emitting area of the self-luminous element having another luminous efficiency.
【請求項6】 前記最も発光効率が高い自発光素子は緑
色を発光する自発光素子であることを特徴とする請求項
5に記載のカラー表示装置。
6. The color display device according to claim 5, wherein the self-luminous element having the highest luminous efficiency is a self-luminous element that emits green light.
【請求項7】 最も発光効率が低い自発光素子の発光面
積を、他の発光効率の自発光素子の発光面積よりも大き
くしたことを特徴とする請求項2又は3に記載のカラー
表示装置。
7. The color display device according to claim 2, wherein the light-emitting area of the self-luminous element having the lowest luminous efficiency is larger than the light-emitting area of the self-luminous element having the other luminous efficiency.
【請求項8】 前記最も発光効率が低い自発光素子は、
赤色又は青色を発光する自発光素子であることを特徴と
する請求項7に記載のカラー表示装置。
8. The self-luminous element having the lowest luminous efficiency,
The color display device according to claim 7, wherein the color display device is a self-luminous element that emits red or blue light.
【請求項9】 発光効率が低くなるにつれて発光面積が
順に大きくしたことを特徴とする請求項2又は3に記載
のカラー表示装置。
9. The color display device according to claim 2, wherein the luminous area increases in order as the luminous efficiency decreases.
【請求項10】 前記自発光素子は、エレクトロルミネ
ッセンス表示装置であることを特徴とする請求項1乃至
9のうちいずれか1項に記載のカラー表示装置。
10. The color display device according to claim 1, wherein the self-luminous element is an electroluminescence display device.
JP2000047901A 1999-02-26 2000-02-24 Color organic EL display device Expired - Lifetime JP3670923B2 (en)

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JP11-50742 2000-02-02
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US7091936B1 (en) 1999-10-04 2006-08-15 Sanyo Electric Co., Ltd. Color display device
US7102293B2 (en) 2003-09-29 2006-09-05 Sanyo Electric Co., Ltd. Organic EL panel
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US8022899B2 (en) 2005-01-28 2011-09-20 Toshiba Matsushita Display Technology Co., Ltd. EL display apparatus and drive method of EL display apparatus
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US8153184B2 (en) 2001-11-26 2012-04-10 Samsung Mobile Display Co., Ltd. Organic EL display device and method of manufacturing the same
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US8278817B2 (en) 2005-09-30 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Display device with a plurality of picture elements and electronic device with display device
WO2012132862A1 (en) * 2011-03-29 2012-10-04 凸版印刷株式会社 Organic electroluminescence display and method for manufacturing same
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US8934072B2 (en) 2003-12-15 2015-01-13 Genoa Color Technologies Ltd. Multi-color liquid crystal display
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US7932880B2 (en) 2002-04-26 2011-04-26 Toshiba Matsushita Display Technology Co., Ltd. EL display panel driving method
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US7777698B2 (en) 2002-04-26 2010-08-17 Toshiba Matsushita Display Technology, Co., Ltd. Drive method of EL display panel
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US7924248B2 (en) 2002-04-26 2011-04-12 Toshiba Matsushita Display Technology Co., Ltd. Drive method of EL display apparatus
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US7442594B2 (en) 2003-04-17 2008-10-28 Samsung Sdi Co., Ltd. Method for manufacturing a flat panel display with improved white balance
US7532184B2 (en) 2003-04-17 2009-05-12 Samsung Mobile Display Co., Ltd. Flat panel display with improved white balance
US7285902B2 (en) 2003-04-17 2007-10-23 Samsung Sdi Co., Ltd. Flat panel display with improved white balance
US7723912B2 (en) 2003-04-17 2010-05-25 Samsung Mobile Display Co., Ltd. Flat panel display with improved white balance
US7161180B2 (en) 2003-04-17 2007-01-09 Samsung Sdi Co., Ltd. Flat panel display with improved white balance
US7385223B2 (en) 2003-04-24 2008-06-10 Samsung Sdi Co., Ltd. Flat panel display with thin film transistor
US7297980B2 (en) 2003-06-05 2007-11-20 Samsung Sdi Co., Ltd. Flat panel display device with polycrystalline silicon thin film transistor
US8049220B2 (en) 2003-06-05 2011-11-01 Samsung Mobile Display Co., Ltd. Flat panel display device with polycrystalline silicon thin film transistor
JP4690665B2 (en) * 2003-06-06 2011-06-01 ローム株式会社 Organic EL drive circuit and organic EL display device using the same
JP2005018038A (en) * 2003-06-06 2005-01-20 Rohm Co Ltd Organic el driving circuit and organic el display device using same
US7102293B2 (en) 2003-09-29 2006-09-05 Sanyo Electric Co., Ltd. Organic EL panel
US7202841B2 (en) 2003-09-29 2007-04-10 Sanyo Electric Co., Ltd. Organic EL panel
JP2013057967A (en) * 2003-10-02 2013-03-28 Global Oled Technology Llc Color display with white light emitting elements
JP2011237806A (en) * 2003-12-15 2011-11-24 Genoa Color Technologies Ltd Multi-primary color liquid crystal display device
JP2014186353A (en) * 2003-12-15 2014-10-02 Genoa Color Technologies Ltd Multi-primary color liquid crystal display device
US8934072B2 (en) 2003-12-15 2015-01-13 Genoa Color Technologies Ltd. Multi-color liquid crystal display
KR100691698B1 (en) 2004-01-07 2007-03-09 세이코 엡슨 가부시키가이샤 Electro-optical apparatus
US7492337B2 (en) 2004-01-07 2009-02-17 Seiko Epson Corporation Electro-optical device
JP2005243281A (en) * 2004-02-24 2005-09-08 Seiko Epson Corp Organic electroluminescent device, manufacturing method of same, and electronic device
JP2005302388A (en) * 2004-04-07 2005-10-27 Hitachi Displays Ltd Spontaneous light emission display device
KR101058093B1 (en) * 2004-07-09 2011-08-24 삼성전자주식회사 Organic light emitting display
US7573070B2 (en) 2004-09-23 2009-08-11 Samsung Mobile Display Co., Ltd. Organic light emitting display and method of fabricating the same
KR100626039B1 (en) 2004-11-22 2006-09-20 삼성에스디아이 주식회사 Flat panel display
JP2006164618A (en) * 2004-12-03 2006-06-22 Fuji Electric Holdings Co Ltd Display device using a plurality of organic el elements
JP4729754B2 (en) * 2004-12-03 2011-07-20 富士電機株式会社 Display device using a plurality of organic EL light emitting elements
US8022899B2 (en) 2005-01-28 2011-09-20 Toshiba Matsushita Display Technology Co., Ltd. EL display apparatus and drive method of EL display apparatus
JP2006244892A (en) * 2005-03-04 2006-09-14 Chunghwa Picture Tubes Ltd Active-matrix organic el device array
TWI418216B (en) * 2005-03-30 2013-12-01 Sanyo Electric Co Display device
US8373629B2 (en) 2005-03-30 2013-02-12 Sanyo Electric Co., Ltd. Display device
US7271537B2 (en) 2005-04-15 2007-09-18 Sony Corporation Display device and a method of manufacturing the display device
JP2006308796A (en) * 2005-04-27 2006-11-09 Sanyo Electric Co Ltd Display apparatus
KR100737063B1 (en) 2005-06-21 2007-07-06 엘지이노텍 주식회사 Organic light emitting display device and driving method thereof
JP2007066862A (en) * 2005-08-26 2007-03-15 Samsung Sdi Co Ltd Organic light emitting display device, and manufacturing method of the same
KR100729089B1 (en) 2005-08-26 2007-06-14 삼성에스디아이 주식회사 Organic light emitting display and method for fabricating the same
JP4732861B2 (en) * 2005-08-26 2011-07-27 三星モバイルディスプレイ株式會社 Organic light-emitting display device and method for manufacturing the same
KR100797157B1 (en) * 2005-08-30 2008-01-23 특허법인 맥 White light-emitting inorganic-electroluminescents device, white light-emitting diode and illumination device using white phosphor layers
JP2007094025A (en) * 2005-09-29 2007-04-12 Sanyo Epson Imaging Devices Corp Electrooptic device and electronic equipment
US11996436B2 (en) 2005-09-30 2024-05-28 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US8278817B2 (en) 2005-09-30 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Display device with a plurality of picture elements and electronic device with display device
US11676990B2 (en) 2005-09-30 2023-06-13 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US9099374B2 (en) 2005-09-30 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US11211424B2 (en) 2005-09-30 2021-12-28 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US10790329B2 (en) 2005-09-30 2020-09-29 Semiconductor Energy Laboratory Co., Ltd. Display device with a plurality of pixels and electronic device with display device
US9887236B2 (en) 2005-09-30 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US8629612B2 (en) 2005-09-30 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Display device with a plurality of pixels and electronic device with display device
US10043849B2 (en) 2005-09-30 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device that expands color reproduction area by satisfying the surplus in the color gamut
JP2007122033A (en) * 2005-09-30 2007-05-17 Semiconductor Energy Lab Co Ltd Display device and electronic device
KR100872754B1 (en) * 2005-10-18 2008-12-08 세이코 엡슨 가부시키가이샤 Display device, method of disposing pixels, and pixel disposition program
JP2007115622A (en) * 2005-10-24 2007-05-10 Toshiba Matsushita Display Technology Co Ltd Organic electroluminescent display device
JP4703363B2 (en) * 2005-10-24 2011-06-15 東芝モバイルディスプレイ株式会社 Organic EL display device
KR100732430B1 (en) 2006-06-29 2007-06-27 주식회사 대우일렉트로닉스 Method for manufacturing organic light emitting diode panel
JP2008098046A (en) * 2006-10-13 2008-04-24 Seiko Epson Corp Light emitting device and electronic apparatus
JP2008108439A (en) * 2006-10-23 2008-05-08 Nec Lighting Ltd Electroluminescent element and electroluminescent panel
KR100836471B1 (en) * 2006-10-27 2008-06-09 삼성에스디아이 주식회사 Mask and deposition apparatus using the same
US9224761B2 (en) 2006-11-13 2015-12-29 Joled Inc. Display device, electro-optical element driving method and electronic equipment
US8237690B2 (en) 2006-11-13 2012-08-07 Sony Corporation Display device, electro-optical element driving method and electronic equipment
WO2008059732A1 (en) * 2006-11-13 2008-05-22 Sony Corporation Display device, method for driving electro-optical element, and electronic device
US9070601B2 (en) 2006-11-13 2015-06-30 Sony Corporation Display device, electro-optical element driving method and electronic equipment
JP2008122647A (en) * 2006-11-13 2008-05-29 Sony Corp Display device, driving method of electro-optical element, and electronic equipment
US8743098B2 (en) 2006-11-13 2014-06-03 Sony Corporation Display device, electro-optical element driving method and electronic equipment
TWI409751B (en) * 2006-11-13 2013-09-21 Sony Corp A display device, a driving method of an electro-optical element, and an electronic device
US8553020B2 (en) 2006-11-13 2013-10-08 Sony Corporation Display device, electro-optical element driving method and electronic equipment
JP2008300316A (en) * 2007-06-04 2008-12-11 Rohm Co Ltd Organic el element, its manufacturing method, and organic el display panel using the same
JP2009054395A (en) * 2007-08-27 2009-03-12 Seiko Epson Corp Electro-optical device and electronic equipment
JP2009080990A (en) * 2007-09-25 2009-04-16 Panasonic Electric Works Co Ltd Planar light emitting module
JP4614106B2 (en) * 2008-06-18 2011-01-19 ソニー株式会社 Self-luminous display device and electronic device
US8610348B2 (en) 2008-06-18 2013-12-17 Sony Corporation Self-light emitting display unit and electronic device
US9978815B2 (en) 2008-06-18 2018-05-22 Sony Corporation Self-light emitting display unit and electronic device
US8723416B2 (en) 2008-06-18 2014-05-13 Sony Corporation Self-light emitting display unit and electronic device
US8446092B2 (en) 2008-06-18 2013-05-21 Sony Corporation Self-light emitting display unit and electronic device
US9666656B2 (en) 2008-06-18 2017-05-30 Sony Corporation Self-light emitting display unit and electronic device
JP2010002476A (en) * 2008-06-18 2010-01-07 Sony Corp Light emission display and electronic apparatus
US10236325B2 (en) 2008-06-18 2019-03-19 Sony Corporation Self-light emitting display unit and electronic device
US9041281B2 (en) 2008-06-18 2015-05-26 Sony Corporation Self-light emitting display unit and electronic device
US10249687B2 (en) 2008-06-18 2019-04-02 Sony Corporation Self-light emitting display unit and electronic device
US9397147B2 (en) 2008-06-18 2016-07-19 Sony Corporation Self-light emitting display unit and electronic device
US10998382B2 (en) 2008-06-18 2021-05-04 Sony Corporation Self-light emitting display unit and electronic device
JP2008257271A (en) * 2008-07-04 2008-10-23 Canon Inc Display device
JP2010225587A (en) * 2009-03-19 2010-10-07 Samsung Mobile Display Co Ltd Organic light-emitting display
US8569947B2 (en) 2009-03-19 2013-10-29 Samsung Display Co., Ltd. Organic light emitting diode display for reducing reflection of external light
JP2011009169A (en) * 2009-06-29 2011-01-13 Kyocera Corp Image display and method of manufacturing the same
JP2011187438A (en) * 2010-03-09 2011-09-22 Samsung Mobile Display Co Ltd Organic light-emitting display device
JP2010198040A (en) * 2010-06-03 2010-09-09 Seiko Epson Corp Display device, pixel arrangement method, and pixel arrangement program
TWI493766B (en) * 2011-01-14 2015-07-21 Mitsubishi Heavy Ind Ltd Organic EL element for illumination and method for manufacturing the same
WO2012096006A1 (en) * 2011-01-14 2012-07-19 三菱重工業株式会社 Organic el elements for lighting and method for manufacturing same
JP2012146606A (en) * 2011-01-14 2012-08-02 Mitsubishi Heavy Ind Ltd Illumination use organic el element and manufacturing method thereof
WO2012132862A1 (en) * 2011-03-29 2012-10-04 凸版印刷株式会社 Organic electroluminescence display and method for manufacturing same
JP2013030315A (en) * 2011-07-27 2013-02-07 Konica Minolta Holdings Inc Organic el lighting fixture
JP2013073884A (en) * 2011-09-29 2013-04-22 Seiko Epson Corp Organic el display device
JP2020205260A (en) * 2012-03-06 2020-12-24 三星ディスプレイ株式會社Samsung Display Co.,Ltd. Pixel array structure of organic light-emitting display device
US11594578B2 (en) 2012-03-06 2023-02-28 Samsung Display Co., Ltd. Pixel arrangement structure for organic light emitting display device
US11626067B2 (en) 2012-03-06 2023-04-11 Samsung Display Co., Ltd. Pixel arrangement structure for organic light emitting diode display
US11676531B2 (en) 2012-03-06 2023-06-13 Samsung Display Co., Ltd. Pixel arrangement structure for organic light emitting diode display
US11626064B2 (en) 2012-03-06 2023-04-11 Samsung Display Co., Ltd. Pixel arrangement structure for organic light emitting diode display
US11651731B2 (en) 2012-03-06 2023-05-16 Samsung Display Co., Ltd. Pixel arrangement structure for organic light emitting diode display
JP7146861B2 (en) 2012-03-06 2022-10-04 三星ディスプレイ株式會社 Pixel array structure of organic light emitting display
US11626066B2 (en) 2012-03-06 2023-04-11 Samsung Display Co., Ltd. Pixel arrangement structure for organic light emitting diode display
JP2022177199A (en) * 2012-03-06 2022-11-30 三星ディスプレイ株式會社 display
US11980077B2 (en) 2012-03-06 2024-05-07 Samsung Display Co., Ltd. Pixel arrangement structure for organic light emitting display device
JP2018120864A (en) * 2012-03-06 2018-08-02 三星ディスプレイ株式會社Samsung Display Co.,Ltd. Pixel arrangement structure of organic light emitting display device
US11626068B2 (en) 2012-03-06 2023-04-11 Samsung Display Co., Ltd. Pixel arrangement structure for organic light emitting diode display
JP2014022374A (en) * 2012-07-16 2014-02-03 Samsung Display Co Ltd Flat plate display device and method of manufacturing the same
KR20140086439A (en) * 2012-12-28 2014-07-08 삼성디스플레이 주식회사 Organic light emitting device
USRE49592E1 (en) 2012-12-28 2023-07-25 Samsung Display Co., Ltd. Organic light-emitting display device
KR102037273B1 (en) * 2012-12-28 2019-11-27 삼성디스플레이 주식회사 Organic light emitting device
JP2015153607A (en) * 2014-02-14 2015-08-24 セイコーエプソン株式会社 Method for manufacturing organic light emitting device, organic light emitting device and electronic apparatus
CN110265431B (en) * 2014-04-23 2022-12-16 乐金显示有限公司 Organic light emitting display device
CN110265431A (en) * 2014-04-23 2019-09-20 乐金显示有限公司 Oganic light-emitting display device
CN111164666B (en) * 2017-09-29 2022-06-07 夏普株式会社 Display device
US10756310B2 (en) 2017-09-29 2020-08-25 Sharp Kabushiki Kaisha Display device
WO2019064574A1 (en) * 2017-09-29 2019-04-04 シャープ株式会社 Display device
CN111164666A (en) * 2017-09-29 2020-05-15 夏普株式会社 Display device
CN110021630B (en) * 2017-12-29 2023-06-16 乐金显示有限公司 Organic electroluminescent display device and method of manufacturing the same
CN110021630A (en) * 2017-12-29 2019-07-16 乐金显示有限公司 Organic electroluminescence display device and method of manufacturing same and its manufacturing method
US11069876B2 (en) 2017-12-29 2021-07-20 Lg Display Co., Ltd. Organic electroluminescence display device and manufacturing method thereof
JP2019121801A (en) * 2017-12-29 2019-07-22 エルジー ディスプレイ カンパニー リミテッド Organic electroluminescent display and method for manufacturing the same
JP2019129221A (en) * 2018-01-24 2019-08-01 株式会社Joled Display device and method for manufacturing the same
US11217641B2 (en) 2018-01-24 2022-01-04 Joled Inc. Display unit and light emission unit
JP7182569B2 (en) 2018-03-27 2022-12-02 京東方科技集團股▲ふん▼有限公司 Light-emitting element, manufacturing method thereof, and display device
US11744117B2 (en) 2018-03-27 2023-08-29 Boe Technology Group Co., Ltd. Light emitting device and method for manufacturing the same, and display device
JP2021516843A (en) * 2018-03-27 2021-07-08 京東方科技集團股▲ふん▼有限公司Boe Technology Group Co.,Ltd. Light emitting element and its manufacturing method, display device
JP2019185888A (en) * 2018-04-03 2019-10-24 キヤノン株式会社 Display device and imaging device
KR20190137198A (en) * 2018-05-31 2019-12-11 삼성디스플레이 주식회사 Display device
KR102587116B1 (en) * 2018-05-31 2023-10-10 삼성디스플레이 주식회사 Display device
US11910656B2 (en) 2018-05-31 2024-02-20 Samsung Display Co., Ltd. Display device including a plurality of layers each including a light emitting layer
WO2020049738A1 (en) * 2018-09-07 2020-03-12 シャープ株式会社 Display device
CN109377965B (en) * 2018-12-21 2021-06-25 信利半导体有限公司 Special-shaped pixel driving unit, pixel driving array and display device
CN109377965A (en) * 2018-12-21 2019-02-22 信利半导体有限公司 Special-shaped pixel drive unit, pixel driver array and display equipment
CN112396977B (en) * 2019-08-19 2023-04-18 株式会社日本显示器 Display device
CN112396977A (en) * 2019-08-19 2021-02-23 株式会社日本显示器 Display device
WO2021237530A1 (en) * 2020-05-27 2021-12-02 重庆康佳光电技术研究院有限公司 Display device and preparation method therefor

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