JP2001284313A - Substrate-processing method and substrate processor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for controlling a system in such a way that the possibility that a substrate is subjected to excessive processing by chemical is eliminated and the processing result of the substrate always becomes constant, even if the temperature or concentration of the chemical supplied into the processing tank becomes high, when chemical is supplied into a processing bath, the processing tank is filled with chemicals, the supply of the chemicals into the treatment bath is stopped, and the substrate is surface-processed by holding it in a state, where it is immersed in chemical in the treatment bath. SOLUTION: The temperature or concentration of chemical supplied into the treatment bath is measured, the average value of a measurement value is calculated at each measurement, and processing time is corrected by using the average value until time which is set as chemical supply time passes from the supply start time of chemical into the treatment bath 10. When correction processing time is elapsed, the supply of chemical into the treatment bath is stopped and a processing is terminated, even if setting time has not elapsed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a semiconductor wafer,
Glass substrates for liquid crystal display devices, substrates for electronic components, etc. are treated with hydrofluoric acid (hydrofluoric acid), a mixture of hydrofluoric acid and aqueous hydrogen peroxide, and buffered hydrofluoric acid (hydrogen fluoride, ammonium fluoride and water). The present invention relates to a substrate processing method for performing surface treatment such as etching by immersing the substrate in a chemical solution such as a mixed solution of the above, and a substrate processing apparatus used for performing the method.

[0002]

2. Description of the Related Art For example, in a semiconductor device manufacturing process, when removing a silicon oxide film deposited on the surface of a substrate, for example, a silicon wafer, a chemical solution containing hydrogen fluoride, for example, hydrofluoric acid is used. Hydrofluoric acid is supplied into a processing tank containing the wafer, and the wafer is immersed in hydrofluoric acid to etch the wafer surface. After the etching process, the wafer is washed with pure water to remove unnecessary substances such as hydrofluoric acid and decomposition products from the wafer surface. In the so-called one-bath method, in which the etching treatment with hydrofluoric acid and the rinsing with pure water are performed in one processing tank, hydrofluoric acid or pure water is sequentially supplied into one processing tank and hydrofluoric acid or the like is supplied. The wafers are filled with pure water in order, and the wafers accommodated in the processing bath are immersed in hydrofluoric acid or pure water in order, so that the wafers are etched and washed.

By the way, when a wafer is etched using hydrofluoric acid, for example, pure water used for rinsing is usually stored in a processing tank before the processing is started. The wafer is immersed in water. In this state, hydrofluoric acid is supplied into the processing tank,
The hydrofluoric acid is mixed with the pure water in the processing tank, and the hydrofluoric acid flowing into the processing tank pushes out the pure water from the overflow part at the top of the processing tank, and the processing tank is gradually replaced with hydrofluoric acid. Will be done. Then, when the inside of the processing tank is completely replaced with hydrofluoric acid and the hydrofluoric acid overflows from the overflow portion at the upper part of the processing tank, the supply of hydrofluoric acid into the processing tank is stopped. Thereafter, the wafer is etched for a predetermined time while being immersed in hydrofluoric acid in the processing bath.

In such a one-bath process, hydrofluoric acid is supplied into a processing tank filled with pure water to mix hydrofluoric acid into pure water in the processing tank. The etching of the wafer with hydrofluoric acid proceeds.
For this reason, the mixing time from when the supply of hydrofluoric acid into the processing tank is started until the supply is stopped, and when the supply of hydrofluoric acid into the processing tank is stopped, the wafer is immersed in hydrofluoric acid of a certain concentration. The sum of the immersion time and the time of the immersion is maintained as the processing time of the wafer. Further, the amount of etching changes depending on the temperature and concentration of hydrofluoric acid in addition to the processing time. For this reason, the temperature or concentration of hydrofluoric acid supplied into the processing tank was measured, and the supply of hydrofluoric acid into the processing tank was stopped, and at the time of transition from the mixing process to the immersion process, it was usually measured a plurality of times. Calculate the average value of the temperature or concentration of hydrofluoric acid, correct the preset processing time based on the average value of the temperature or concentration of hydrofluoric acid, and subtract the mixing time from the corrected processing time. Thus, the corrected immersion time is calculated, and when the corrected immersion time has elapsed, the wafer etching process is terminated.
As described above, by controlling the previously set immersion time, the amount of etching is controlled to be always constant.

[0005]

However, when the temperature or concentration of hydrofluoric acid supplied into the processing tank increases,
At the time when the supply of hydrofluoric acid into the treatment tank is stopped after the preset mixing time has elapsed and the process shifts from the mixing process to the immersion process, the average value of the temperature or concentration of hydrofluoric acid measured during the mixing time is calculated. When the processing time is calculated and the processing time is corrected based on the average value, there is a possibility that the correction processing time has already passed at that time. In such a case, even if the processing is terminated immediately,
The wafer has been over-etched.

The present invention has been made in view of the above circumstances, and supplies a chemical solution into a processing tank, fills the processing tank with the chemical solution, and then stops supplying the chemical solution into the processing tank. In the case where the substrate is surface-treated by holding the substrate immersed in the chemical solution in the processing tank, and the temperature or concentration of the chemical solution supplied into the processing tank may be increased, To provide a substrate processing method capable of controlling a processing result of a substrate to be always constant by eliminating a possibility that a substrate is excessively processed by a chemical solution, and a substrate processing capable of suitably performing the method. It is intended to provide a device.

[0007]

The invention according to claim 1 is
In the state where the substrate is accommodated inside the processing tank, the process of supplying the chemical solution into the processing tank for a preset time and filling the processing solution with the chemical solution, and stopping the supply of the chemical solution into the processing tank. After that, in a substrate processing method for surface-treating a substrate by passing through a step of holding a substrate immersed in a chemical solution in a processing tank, the setting is performed after starting supply of the chemical solution into the processing tank. Until time elapses, measure the temperature or concentration of the chemical solution supplied into the processing tank, calculate an average value of at least a plurality of measured values for each measurement, and use the calculated average value in the processing tank. A predetermined processing time from the start of the supply of the chemical solution into the inside to the end of the processing is corrected, and when the corrected processing time has elapsed, the processing is performed even when the set time has not elapsed. Processing by stopping supply of chemical solution into the tank Characterized in that it end.

According to a second aspect of the present invention, in the substrate processing method according to the first aspect, every time the temperature or concentration of the chemical solution supplied into the processing tank is measured, all the measured values measured so far are measured. It is characterized in that a cumulative average value is calculated.

According to a third aspect of the present invention, in the substrate processing method according to the first or second aspect, the chemical solution for processing the substrate is an etching solution, and the substrate is etched in a processing tank. It is characterized by.

According to a fourth aspect of the present invention, there is provided a liquid supply port in a lower portion and an overflow portion in which a liquid overflows in an upper portion,
A substrate processing apparatus comprising: a processing tank in which a substrate is loaded and accommodated therein; and a chemical solution supply unit configured to supply a chemical solution to the processing tank through the liquid supply port for a preset time. Measuring means for measuring the temperature or concentration of the chemical solution supplied into the tank, and an average value calculating unit for calculating an average value of at least a plurality of measured values each time the temperature or concentration of the chemical solution is measured by the measuring means; Using the average value calculated by the average value calculation unit, a correction processing time calculation unit that corrects a preset processing time from the start of the supply of the chemical solution into the processing tank to the end of the processing, A comparing unit that compares the correction processing time calculated by the correction processing time calculation unit with the elapsed processing time elapsed after the supply of the chemical solution into the processing tank is started; When it is determined that the time is equal to or longer than the correction processing time, even when the correction processing time has not reached the set time, the supply of the chemical solution into the processing tank is stopped and the processing is terminated. And control means for controlling so as to perform the control.

According to a fifth aspect of the present invention, in the substrate processing apparatus of the fourth aspect, each time the average value calculating section measures the temperature or concentration of the chemical solution supplied into the processing tank by the detecting means, And calculating a cumulative average value of all the measured values.

According to a sixth aspect of the present invention, in the substrate processing apparatus according to the fourth or fifth aspect, the chemical solution supply means comprises:
An etching solution is supplied into the processing tank, and the substrate is etched in the processing tank.

According to the substrate processing method of the present invention, in the process of supplying the chemical solution into the processing tank, the average value of the measured values is calculated every time the temperature or concentration of the supplied chemical solution is measured, The processing time is corrected using the average value, and at the time when the corrected processing time has elapsed, even if the preset time as the time for supplying the chemical solution into the processing tank has not elapsed, the processing tank is not processed. The supply of the chemical solution to the inside is stopped, and the process is terminated. Therefore, even though the correction processing time has elapsed as in the conventional method,
It is possible to prevent the processing of the substrate from being continued by supplying the chemical solution into the processing tank and the substrate being excessively processed with the chemical solution.
In addition, the average value of the measured values is calculated each time the temperature or concentration of the chemical is measured, and the processing time is corrected using the average value. Is only temporarily increased, a correction in the direction of shortening the processing time is performed, and the supply of the chemical solution into the processing tank is stopped when the processing amount of the substrate has not reached the desired amount. It is possible to avoid ending the processing.

[0014] In the substrate processing method of the invention according to claim 2,
Every time the temperature or concentration of the chemical solution supplied into the processing tank is measured, the cumulative average of all the measured values measured so far is calculated, and the processing time is corrected using the cumulative average. Therefore, even if the temperature of the chemical solution fluctuates for a short time during the supply of the chemical solution into the processing tank,
Correction of the processing time can be performed accurately.

According to a third aspect of the present invention, in the substrate processing method,
It is possible to control the etching amount of the substrate to be constant.

In the substrate processing apparatus according to the fourth aspect of the present invention, in the process of supplying the chemical solution into the processing tank by the chemical solution supply means, every time the temperature or concentration of the chemical solution is measured by the measurement means, the average value calculation unit is used. The average value of the measured values is calculated, the processing time is corrected using the average value by the correction processing time calculation unit, and the correction unit starts the correction processing time and the supply of the chemical solution into the processing tank by the comparison unit. Is compared with the elapsed processing time elapsed since. Then, when it is determined in the comparing section that the elapsed processing time is equal to or longer than the correction processing time, the control means elapses a preset time as a time for supplying the chemical solution into the processing tank. If not, the supply of the chemical solution into the processing tank is stopped, and the processing is terminated. Therefore, even though the correction processing time has elapsed, it is possible to prevent the processing of the substrate from being continued by supplying the chemical liquid into the processing tank and the substrate being excessively processed with the chemical liquid. In addition, the correction processing time calculation unit corrects the processing time using the average value calculated by the average value calculation unit every time the temperature or concentration of the chemical solution is measured. If the temperature or concentration of the chemical only temporarily rises in
Correction is performed in the direction of shortening the processing time, and the processing does not end by stopping the supply of the chemical solution into the processing tank when the processing amount of the substrate has not reached the desired amount.

According to a fifth aspect of the present invention, in the substrate processing apparatus,
Every time the temperature or concentration of the chemical solution supplied into the processing tank is measured by the detecting means, the average value calculating section calculates the cumulative average value of all the measured values so far, and calculates the cumulative average value. The correction of the processing time is performed by the correction processing time calculation unit using the, so even if the temperature of the chemical liquid fluctuates for a short time during the supply of the chemical liquid into the processing tank, the correction of the processing time is performed. Done exactly.

In the substrate processing apparatus of the invention according to claim 6,
The etching solution is supplied into the processing tank by the chemical liquid supply means, and the substrate is etched in the processing tank so that the etching amount is constant.

[0019]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A preferred embodiment of the present invention will be described below with reference to FIGS.

FIG. 1 is a schematic diagram showing an example of the configuration of a substrate processing apparatus used to carry out the substrate processing method according to the present invention. This substrate processing apparatus is called a one-bath method. In this apparatus, a chemical solution, for example, hydrofluoric acid and pure water is sequentially supplied into one processing tank, and the processing tank is sequentially supplied with hydrofluoric acid and pure water. Each of the substrates is filled, and a substrate, for example, a silicon wafer, housed in a processing tank is immersed in hydrofluoric acid and pure water in turn, and the wafer is etched and washed with water.

This substrate processing apparatus has a liquid supply port 1
2, a processing tank 10 in which a silicon wafer W is loaded and accommodated therein. The processing bath 10 contains a hydrofluoric acid 16
And pure water are filled in order. Processing tank 10
Is housed in the chamber 18, a liquid outlet 20 is formed at the bottom of the chamber 18, and a drain pipe 22 is connected to and connected to the liquid outlet 20. And
Hydrofluoric acid and pure water overflowing from the overflow portion 14 at the upper part of the processing tank 10 flow down to the bottom of the chamber 18, flow out of the liquid discharge port 20, and are discharged through the drain pipe 22. ing.

The liquid supply port 12 at the lower part of the processing tank 10
The liquid supply pipe 24 is connected and connected. The liquid supply pipe 24 is connected to a pure water supply pipe 26 connected to a pure water supply source and a hydrofluoric acid supply pipe 28 connected to a supply source of a high concentration stock solution of hydrofluoric acid. In addition, the liquid supply pipe 2
4 and the pure water supply pipe 26 and the hydrofluoric acid supply pipe 28 may be connected via a mixing valve. Opening / closing control valves 30 and 32 are interposed in the pure water supply pipe 26 and the hydrofluoric acid supply pipe 28, respectively. Although not shown, a flow control valve is interposed in each of the supply pipes 26 and 28. When the open / close control valve 30 is opened and the open / close control valve 32 is closed, pure water is supplied from the pure water supply pipe 26 into the processing tank 10 through the liquid supply pipe 24, and both the open / close control valves 30 and 32 are opened. In the open state, hydrofluoric acid adjusted to a predetermined concentration by mixing a high-concentration stock solution of hydrofluoric acid supplied through the hydrofluoric acid supply pipe 28 with pure water supplied from the pure water supply pipe 26 is supplied to the liquid supply pipe. 24 through the processing tank 10
It is supplied to the inside.

The liquid supply pipe 24 has a temperature detector 3
4 is inserted, and the processing tank 1 is detected by the temperature detector 34.
The temperature of the hydrofluoric acid supplied into 0 is detected, and the detected temperature signal is sent to the operation unit 36, and a signal indicating the operation result is sent from the operation unit 36 to the controller 38. . The calculation unit 36 includes a setting input unit 40, an elapsed processing time counter 42, an average value calculation unit 44, a correction processing time calculation unit 46, and two comparison units 48 and 50. The opening and closing control valves 30 and 32 are connected to the controller 38, respectively.

The processing of etching and washing the silicon wafer using the substrate processing apparatus having the structure shown in FIG. 1 is performed as follows.

Before starting the treatment, the mixing time from the start of the supply of hydrofluoric acid into the treatment tank to the stop of the supply,
After stopping the supply of hydrofluoric acid into the processing bath, the immersion time for maintaining the state where the wafer W is immersed in hydrofluoric acid of a certain concentration and the mixing time are the total time of the mixing time. Data is input from the setting input unit 40 in advance.

It is assumed that after the processing in the previous step is completed, the processing tank 10 is filled with pure water, and the wafer W is immersed in the pure water. In this state, the opening / closing control valves 30 and 32 are opened to mix the pure water supplied from the pure water supply pipe 26 with the high concentration stock solution of hydrofluoric acid supplied through the hydrofluoric acid supply pipe 28 to adjust to a predetermined concentration. Hydrofluoric acid
The liquid is supplied into the processing tank 10 through the liquid supply pipe 24. Thereby, the hydrofluoric acid is mixed with the pure water in the processing tank 10, and the pure water is extruded from the overflow portion 14 on the upper part of the processing tank 10 by the hydrofluoric acid flowing into the processing tank 10, and The pure water part is replaced with hydrofluoric acid. Eventually, the inside of the processing tank 10 is filled with hydrofluoric acid adjusted to a predetermined concentration, and the hydrofluoric acid overflows from the overflow portion 14 at the upper part of the processing tank 10.

The etching of the wafer W with hydrofluoric acid starts when the wafer W comes into contact with hydrofluoric acid, that is,
It starts from the point in time when the supply of hydrofluoric acid into the processing tank 10 is started. Then, the elapsed processing time counter 42 of the arithmetic unit 36
In this case, the counting is started from the point in time when the supply of hydrofluoric acid into the processing tank 10 is started, and the count signal is sent to the comparing unit 4.
8 is input. In addition, during the mixing process, the temperature of the hydrofluoric acid supplied into the processing tank 10 is detected by the temperature detector 34, and the detected temperature signal is sent to the average value calculation unit 44 of the calculation unit 36. Each time the temperature of hydrofluoric acid is detected, the average value calculating section 44 calculates the cumulative average value of all the measured values so far, and sends the signal of the cumulative average value to the correction processing time calculating section 46. Is entered. Then, in the comparing section 48, the preset mixing time is compared with the elapsed processing time, and the mixing time elapses after the supply of hydrofluoric acid into the processing tank 10 is started.
When it is determined that the elapsed processing time is equal to or greater than the mixing time in
8, a signal is sent from the controller 38 to the on / off control valve 3
Control signals are sent to 0 and 32. The open / close control valves 30 and 32 are closed by this control signal, and the supply of hydrofluoric acid into the processing tank 10 is stopped. At this point, the inside of the processing bath 10 is filled with hydrofluoric acid adjusted to a predetermined concentration, and subsequently, the wafer W is immersed in the hydrofluoric acid in the processing bath 10 while being kept immersed therein. Processing is performed.

When the supply of hydrofluoric acid into the processing tank 10 is stopped and the process shifts from the mixing process to the immersion process, the average value calculation unit 4
4, that is, the signal of the finally calculated cumulative average value is output to the correction processing time calculation unit 46.
The correction processing time calculation unit 46 uses the final cumulative average value, substitutes the cumulative average value into an etching rate empirical formula conventionally used in each semiconductor manufacturing plant, and performs processing time. (Mixing time + immersion time)
Is corrected. The signal of the correction processing time corrected by the correction processing time calculation unit 46 is input to the comparison unit 50. The count signal from the elapsed processing time counter 42 is also continuously input to the comparing unit 50, and the comparing unit 50 compares the correction processing time with the elapsed processing time. Then, when the corrected immersion time obtained by subtracting the mixing time from the corrected processing time has elapsed, and the comparing unit 50 determines that the elapsed processing time is equal to or longer than the corrected processing time, the comparing unit 5
A signal is sent from 0 to the controller 38. In response to this input signal, a control signal is sent from the controller 38 to the on / off control valve 30, the on / off control valve 30 is opened, and pure water is supplied from the pure water supply pipe 26 through the liquid supply pipe 24 into the treatment tank 10. Is done. By supplying pure water into the processing tank 10, hydrofluoric acid is extruded from the overflow portion 14 at the upper part of the processing tank 10, and the hydrofluoric acid in the processing tank 10 is replaced with pure water. Then, the processing tank 10 is filled with pure water, and the processing tank 1
In this state, pure water overflows from the overflow portion 14 at the top of the zero.
In this state, the wafer W immersed in the pure water in the processing bath 10 is washed with water. Then, after the wafer W is rinsed for a predetermined time, the supply of pure water into the processing tank 10 is stopped, and the process proceeds to the next chemical solution processing, or the wafer W is unloaded from the processing tank 10. The process ends.

The above-described series of operations is a normal operation. Next, an operation in the case where the temperature of hydrofluoric acid supplied into the processing tank 10 during the mixing process becomes higher than usual will be described.

Even during the mixing process, that is, before the elapsed processing time reaches the mixing time, the signal of the cumulative average value of all the measured values measured up to a certain point in time is input to the correction processing time calculation unit 46. , Correction processing time calculation unit 46
, The correction of the processing time is repeatedly performed using the cumulative average value over time. Then, while the correction processing time is updated one after another, the signal of the correction processing time is continuously input to the comparing unit 50 together with the count signal from the elapsed processing time counter 42. The comparing unit 50 corrects the correction processing time and the elapsed processing time. And are being continuously compared. At this time, even before the comparison unit 48 determines that the elapsed processing time is equal to or longer than the mixed time, the comparison unit 5
When it is determined that the elapsed processing time is equal to or longer than the correction processing time at 0, a signal is sent from the comparing unit 50 to the controller 38 at that time. With this input signal, a control signal is sent from the controller 38 to the on / off control valve 32, and the on / off control valve 32 is closed. Then, only pure water is supplied into the processing tank 10 from the pure water supply pipe 26 through the liquid supply pipe 24, and the etching process is completed, and the process proceeds to the water washing process. By performing such control, the temperature of hydrofluoric acid supplied into the processing tank 10 became higher than usual, and the correction processing time calculated by the correction processing time calculation unit 46 became shorter than the mixing time. Even if
The conventional over-etching of the wafer can be prevented. Thereafter, in the same manner as above, the wafer W is washed with water, and when the washing is completed, the process proceeds to the next chemical solution processing,
Alternatively, the processing is finished by unloading the wafer W from the processing tank 10.

FIG. 2 shows an example of a flowchart for performing the above-described series of control operations.

In the above-described embodiment, the wafer etching process using hydrofluoric acid has been described as an example. However, even if the etching process is performed using a chemical solution other than hydrofluoric acid or the etching process is not performed, the processing result may be temperature or concentration. The method according to the present invention can be applied to processing affected by the above. Further, in the above embodiment, every time the temperature of the hydrofluoric acid supplied into the processing tank is measured, the cumulative average value of all the measured values measured so far is calculated,
The processing time is corrected using the cumulative average value, but instead of such a cumulative average value, for example, an average value of the measured values of several times immediately before is calculated, and the average value is used. The processing time may be corrected. Furthermore, in the above-described embodiment, the processing time is corrected by measuring the temperature of hydrofluoric acid, but the concentration of hydrofluoric acid supplied into the processing tank is measured, and the processing time is determined based on the concentration. May be corrected.

[0033]

According to the substrate processing method of the first aspect of the invention, after supplying a chemical solution into the processing tank and filling the processing tank with the chemical solution, the supply of the chemical solution into the processing tank is stopped to perform the processing. When performing surface treatment on a substrate while holding the substrate immersed in the chemical solution in the tank, even if the temperature or concentration of the chemical solution supplied to the processing tank may increase, This eliminates the risk of over-processing, and the processing results such as the amount of etching of the substrate can be made constant.

In the substrate processing method according to the second aspect of the present invention,
Even when the temperature of the chemical solution fluctuates for a short time during the supply of the chemical solution into the processing tank, the processing time can be accurately corrected.

In the substrate processing method according to the third aspect of the present invention,
The amount of etching of the substrate can be controlled to be constant.

When the substrate processing apparatus according to the fourth aspect of the present invention is used, the method according to the first aspect of the present invention can be suitably performed, and the above-described effects can be obtained reliably.

With the substrate processing apparatus according to the fifth aspect of the present invention, even when the temperature of the chemical solution fluctuates for a short time during the supply of the chemical solution into the processing tank, the correction of the processing time can be accurately performed. Can be done.

When the substrate processing apparatus according to the sixth aspect of the present invention is used, the etching amount of the substrate can be controlled to be constant.

[Brief description of the drawings]

FIG. 1 is a schematic view showing an example of a configuration of a substrate processing apparatus used to carry out a substrate processing method according to the present invention.

FIG. 2 is a first flowchart of a sequence for performing a series of control operations in processing using the substrate processing apparatus shown in FIG. 1;
It is a figure showing an example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Processing tank 12 Liquid supply port of processing tank 14 Overflow part of processing tank 16 Hydrofluoric acid 18 Chamber 20 Liquid outlet of chamber 22 Drainage pipe 24 Liquid supply pipe 26 Pure water supply pipe 28 Hydrofluoric acid supply pipe 30, 32 Open / close Control valve 34 Temperature detector 36 Operation unit 38 Controller 40 Setting input unit 42 Elapsed processing time counter 44 Average value calculation unit 46 Correction processing time calculation unit 48, 50 Comparison unit

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Kazuo Nakajima 4-chome Tenjin Kitamachi 1-chome, Horikawa-dori, Nokyo, Kamigyo-ku, Kyoto Dainippon Screen Mfg. Co., Ltd. (72) Inventor Yuki Yokokawa, Kyoto, Kyoto 4-chome Tenjin, Horikawa-dori Terunouchi-ku 1-1-1, Kitamachi F-term (reference) at Dainippon Screen Mfg. Co., Ltd. 4K057 WA14 WA19 WB06 WE07 WE23 WE25 WG02 WG03 WJ03 WM01 WN01 5F043 AA02 BB02 DD24 EE29 EE40

Claims (6)

[Claims] In a state where a substrate is accommodated in a processing tank,
After supplying the chemical solution into the processing tank for a preset time and filling the processing tank with the chemical solution, stopping the supply of the chemical solution into the processing tank, the substrate was immersed in the chemical solution in the processing tank. In the substrate processing method of surface-treating the substrate in a state, the temperature or concentration of the chemical supplied to the processing tank is measured until the set time elapses after the supply of the chemical into the processing tank is started. An average value of at least a plurality of measured values is calculated for each measurement, and a predetermined processing time from the start of supply of the chemical solution into the processing tank to the end of the processing using the calculated average value. A substrate processing method, wherein when the corrected processing time has elapsed, the supply of the chemical solution into the processing tank is stopped and the processing is terminated even when the set time has not elapsed. . 2. The method according to claim 1, wherein the average value of the measured values calculated each time the temperature or the concentration of the chemical supplied to the processing tank is measured is a cumulative average value of all the measured values. Item 2. The substrate processing method according to Item 1. 3. The substrate processing method according to claim 1, wherein the chemical liquid is an etching liquid, and the substrate is subjected to an etching process. 4. A processing tank having a liquid supply port in a lower part and an overflow part in which liquid overflows in an upper part, in which a substrate is loaded and accommodated, and the liquid supply port is inserted into the processing tank. A chemical solution supply means for supplying a chemical solution only for a preset time; a substrate processing apparatus comprising: a measuring means for measuring a temperature or a concentration of the chemical solution supplied into the processing tank; An average value calculation unit that calculates an average value of at least a plurality of measurement values each time the temperature or the concentration is measured, and using the average value calculated by the average value calculation unit, supplies the chemical solution into the processing tank. A correction processing time calculation unit that corrects a preset processing time from the start to the end of the processing; and a correction processing time obtained by the correction processing time calculation unit and supply of the chemical solution into the processing tank. A comparing unit that compares the elapsed processing time elapsed since the start, and when it is determined that the elapsed processing time is equal to or longer than the correction processing time in the comparing unit,
A substrate processing apparatus, further comprising: control means for stopping supply of the chemical solution into the processing tank even when the correction processing time has not reached the set time, and controlling the processing to end. . 5. Every time the average value calculation section measures the temperature or concentration of the chemical solution supplied into the processing tank by the detection means, it calculates a cumulative average value of all the measured values up to that time. The substrate processing apparatus according to claim 4, wherein: 6. The chemical solution supply means for supplying an etching solution into a processing bath, wherein the substrate is etched in the processing bath.
The substrate processing apparatus according to any one of the preceding claims.