JP2001274405A5 - - Google Patents

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Publication number
JP2001274405A5
JP2001274405A5 JP2000087612A JP2000087612A JP2001274405A5 JP 2001274405 A5 JP2001274405 A5 JP 2001274405A5 JP 2000087612 A JP2000087612 A JP 2000087612A JP 2000087612 A JP2000087612 A JP 2000087612A JP 2001274405 A5 JP2001274405 A5 JP 2001274405A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2000087612A
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Japanese (ja)
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JP2001274405A (ja
JP4618842B2 (ja
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Priority to JP2000087612A priority Critical patent/JP4618842B2/ja
Priority claimed from JP2000087612A external-priority patent/JP4618842B2/ja
Publication of JP2001274405A publication Critical patent/JP2001274405A/ja
Publication of JP2001274405A5 publication Critical patent/JP2001274405A5/ja
Application granted granted Critical
Publication of JP4618842B2 publication Critical patent/JP4618842B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000087612A 2000-03-27 2000-03-27 半導体装置の作製方法 Expired - Fee Related JP4618842B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000087612A JP4618842B2 (ja) 2000-03-27 2000-03-27 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000087612A JP4618842B2 (ja) 2000-03-27 2000-03-27 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2001274405A JP2001274405A (ja) 2001-10-05
JP2001274405A5 true JP2001274405A5 (cg-RX-API-DMAC7.html) 2007-05-24
JP4618842B2 JP4618842B2 (ja) 2011-01-26

Family

ID=18603592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000087612A Expired - Fee Related JP4618842B2 (ja) 2000-03-27 2000-03-27 半導体装置の作製方法

Country Status (1)

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JP (1) JP4618842B2 (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6579086B2 (ja) * 2016-11-15 2019-09-25 信越半導体株式会社 デバイス形成方法
SG11202005303XA (en) * 2017-12-14 2020-07-29 Applied Materials Inc Methods of etching metal oxides with less etch residue

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06244203A (ja) * 1993-02-17 1994-09-02 Sanyo Electric Co Ltd 薄膜トランジスタの製造方法
JP3376247B2 (ja) * 1997-05-30 2003-02-10 株式会社半導体エネルギー研究所 薄膜トランジスタ及び薄膜トランジスタを用いた半導体装置
JP3998888B2 (ja) * 2000-03-08 2007-10-31 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法

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