JP2001274405A5 - - Google Patents
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- JP2001274405A5 JP2001274405A5 JP2000087612A JP2000087612A JP2001274405A5 JP 2001274405 A5 JP2001274405 A5 JP 2001274405A5 JP 2000087612 A JP2000087612 A JP 2000087612A JP 2000087612 A JP2000087612 A JP 2000087612A JP 2001274405 A5 JP2001274405 A5 JP 2001274405A5
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000087612A JP4618842B2 (ja) | 2000-03-27 | 2000-03-27 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000087612A JP4618842B2 (ja) | 2000-03-27 | 2000-03-27 | 半導体装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2001274405A JP2001274405A (ja) | 2001-10-05 |
JP2001274405A5 true JP2001274405A5 (ja) | 2007-05-24 |
JP4618842B2 JP4618842B2 (ja) | 2011-01-26 |
Family
ID=18603592
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000087612A Expired - Fee Related JP4618842B2 (ja) | 2000-03-27 | 2000-03-27 | 半導体装置の作製方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4618842B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6579086B2 (ja) * | 2016-11-15 | 2019-09-25 | 信越半導体株式会社 | デバイス形成方法 |
JP7366019B2 (ja) * | 2017-12-14 | 2023-10-20 | アプライド マテリアルズ インコーポレイテッド | エッチング残留物の少ない金属酸化物のエッチング方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06244203A (ja) * | 1993-02-17 | 1994-09-02 | Sanyo Electric Co Ltd | 薄膜トランジスタの製造方法 |
JP3376247B2 (ja) * | 1997-05-30 | 2003-02-10 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタ及び薄膜トランジスタを用いた半導体装置 |
JP3998888B2 (ja) * | 2000-03-08 | 2007-10-31 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
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2000
- 2000-03-27 JP JP2000087612A patent/JP4618842B2/ja not_active Expired - Fee Related