JP2001267221A - 荷電粒子線露光装置及びデバイス製造方法 - Google Patents

荷電粒子線露光装置及びデバイス製造方法

Info

Publication number
JP2001267221A
JP2001267221A JP2000075894A JP2000075894A JP2001267221A JP 2001267221 A JP2001267221 A JP 2001267221A JP 2000075894 A JP2000075894 A JP 2000075894A JP 2000075894 A JP2000075894 A JP 2000075894A JP 2001267221 A JP2001267221 A JP 2001267221A
Authority
JP
Japan
Prior art keywords
charged particle
optical system
electron
electron optical
particle beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000075894A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001267221A5 (enExample
Inventor
Masato Muraki
真人 村木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2000075894A priority Critical patent/JP2001267221A/ja
Priority to US09/808,175 priority patent/US6566664B2/en
Publication of JP2001267221A publication Critical patent/JP2001267221A/ja
Publication of JP2001267221A5 publication Critical patent/JP2001267221A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
JP2000075894A 2000-03-17 2000-03-17 荷電粒子線露光装置及びデバイス製造方法 Pending JP2001267221A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000075894A JP2001267221A (ja) 2000-03-17 2000-03-17 荷電粒子線露光装置及びデバイス製造方法
US09/808,175 US6566664B2 (en) 2000-03-17 2001-03-15 Charged-particle beam exposure apparatus and device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000075894A JP2001267221A (ja) 2000-03-17 2000-03-17 荷電粒子線露光装置及びデバイス製造方法

Publications (2)

Publication Number Publication Date
JP2001267221A true JP2001267221A (ja) 2001-09-28
JP2001267221A5 JP2001267221A5 (enExample) 2005-08-04

Family

ID=18593714

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000075894A Pending JP2001267221A (ja) 2000-03-17 2000-03-17 荷電粒子線露光装置及びデバイス製造方法

Country Status (1)

Country Link
JP (1) JP2001267221A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004303794A (ja) * 2003-03-28 2004-10-28 Canon Inc 露光装置
US7041988B2 (en) 2002-05-10 2006-05-09 Advantest Corp. Electron beam exposure apparatus and electron beam processing apparatus
JP2006210458A (ja) * 2005-01-26 2006-08-10 Canon Inc 荷電粒子線光学系用収差測定装置、該収差測定装置を具備する荷電粒子線露光装置及び該装置を用いたデバイス製造方法
US7105842B2 (en) 2003-10-07 2006-09-12 Hitachi High-Technologies Corporation Method of charged particle beam lithography and equipment for charged particle beam lithography
JP4856073B2 (ja) * 2004-05-17 2012-01-18 マッパー・リソグラフィー・アイピー・ビー．ブイ． 荷電粒子ビーム露光システム
US8624205B2 (en) 2009-01-09 2014-01-07 Canon Kabushiki Kaisha Charged particle beam writing apparatus and device production method
JP2018533188A (ja) * 2015-09-23 2018-11-08 ケーエルエー−テンカー コーポレイション マルチビーム走査型顕微鏡システムの焦点調整方法及びシステム

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH097538A (ja) * 1995-06-26 1997-01-10 Nippon Telegr & Teleph Corp <Ntt> 荷電ビーム描画装置
JPH09288991A (ja) * 1996-04-23 1997-11-04 Canon Inc 電子ビーム露光装置
JPH09330870A (ja) * 1996-06-12 1997-12-22 Canon Inc 電子ビーム露光装置及びその露光方法
JPH10199469A (ja) * 1997-01-16 1998-07-31 Canon Inc 電子ビーム照明装置及び該装置を備えた電子ビーム露光装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH097538A (ja) * 1995-06-26 1997-01-10 Nippon Telegr & Teleph Corp <Ntt> 荷電ビーム描画装置
JPH09288991A (ja) * 1996-04-23 1997-11-04 Canon Inc 電子ビーム露光装置
JPH09330870A (ja) * 1996-06-12 1997-12-22 Canon Inc 電子ビーム露光装置及びその露光方法
JPH10199469A (ja) * 1997-01-16 1998-07-31 Canon Inc 電子ビーム照明装置及び該装置を備えた電子ビーム露光装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7041988B2 (en) 2002-05-10 2006-05-09 Advantest Corp. Electron beam exposure apparatus and electron beam processing apparatus
JP2004303794A (ja) * 2003-03-28 2004-10-28 Canon Inc 露光装置
US7105842B2 (en) 2003-10-07 2006-09-12 Hitachi High-Technologies Corporation Method of charged particle beam lithography and equipment for charged particle beam lithography
CN100454145C (zh) * 2003-10-07 2009-01-21 株式会社日立高新技术 带电粒子束描绘方法和带电粒子束描绘装置
JP4856073B2 (ja) * 2004-05-17 2012-01-18 マッパー・リソグラフィー・アイピー・ビー．ブイ． 荷電粒子ビーム露光システム
JP2006210458A (ja) * 2005-01-26 2006-08-10 Canon Inc 荷電粒子線光学系用収差測定装置、該収差測定装置を具備する荷電粒子線露光装置及び該装置を用いたデバイス製造方法
US8624205B2 (en) 2009-01-09 2014-01-07 Canon Kabushiki Kaisha Charged particle beam writing apparatus and device production method
JP2018533188A (ja) * 2015-09-23 2018-11-08 ケーエルエー−テンカー コーポレイション マルチビーム走査型顕微鏡システムの焦点調整方法及びシステム

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