JP2001257292A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device wherein corrosion of an antenna material inside and/or deformation or damage of an antenna coil portion hardly occur. SOLUTION: This semiconductor device is constructed by forming an antenna coil for radio communication electrically connected with a pad portion of an IC chip on the upper surface of an insulating layer formed on the IC chip. An insulating protection layer is formed on the antenna coil.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device represented by a non-contact IC card which wirelessly receives power from a reader / writer and transmits / receives signals to / from the reader / writer. More specifically, the present invention relates to a semiconductor device in which corrosion of an internal antenna material and / or deformation or damage of an antenna coil portion hardly occurs.

[0002]

2. Description of the Related Art A semiconductor device such as a card type, a tag type or a coin type on which an IC is mounted has an abundant amount of information and a high security performance. In. Above all, a non-contact type semiconductor device in which power supply and signal transmission and reception are performed by a wireless method without providing external terminals on a base body is difficult due to data destruction due to static electricity entering from a connection terminal, data error due to poor contact, transmission / reception failure, and the like. It has recently attracted attention because it does not cause problems.

As shown in FIG. 5, for example, a non-contact type semiconductor device comprises a circuit module including an IC chip 51 and a wireless communication antenna coil 52 connected to a pad portion of the IC chip, formed of a vinyl chloride resin. Exterior materials 5 such as
No. 3 has been proposed to be fixed by heat fusion.

As the antenna coil of the semiconductor device, generally, a coil formed by winding a conductive paste or a metal film on an insulating substrate is used. In order to realize a smaller semiconductor device, One in which an antenna coil is formed on an IC chip has been proposed (for example, see Japanese Patent No. 2982286).

[0005] When an antenna coil is formed on an IC chip, a conductive metal such as copper or aluminum is used as a material of the antenna coil. The metal material is easily corroded when left in the air. Further, in consideration of practicality, the semiconductor device is desirably provided with an exterior material or embedded in a resin or the like and processed into various shapes before use. However, there is a concern that the antenna portion may be deformed or damaged during the process. If corrosion of the antenna material and / or deformation or damage of the antenna coil occurs,
The electrical characteristics of the antenna change, and stable communication characteristics cannot be obtained.

[0006]

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a semiconductor device in which corrosion of an internal antenna material and / or deformation or damage of an antenna coil portion hardly occur.

[0007]

The object of the present invention is to provide a semiconductor device in which an antenna coil for wireless communication is formed on an upper surface of an insulating layer formed on an IC chip, the antenna coil being electrically connected to a pad portion of the IC chip. In the above, the problem is solved by forming an insulating protective layer on the antenna coil. By forming the protective layer, it is possible to prevent the antenna material from being corroded by the air and from causing deformation and damage of the antenna coil in a process after the antenna is formed.

[0008]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a semiconductor device according to the present invention will be specifically described with reference to the drawings. FIG. 1 is a schematic sectional view of an example of the semiconductor device of the present invention. As shown in the figure, the semiconductor device 1 of the present invention includes a pad portion 7 of the IC chip on an upper surface of an insulating layer 5 formed on the IC chip 3.
To form an antenna coil 9 for wireless communication electrically connected to the antenna coil 9, and an insulating protective layer 11 on the antenna coil 9.
Is formed. Since the insulating layer 5 does not exist at the pad portion 7, the antenna coil 9 can be electrically connected to the pad portion 7. The protective layer 11 is made of an insulating resin that does not adversely affect the electrical characteristics of the antenna 9. By providing the protective layer 11, it is possible to prevent the antenna coil 9 from being deformed or damaged in a process after the formation of the antenna coil 9, and to improve the handling property.

As the IC chip 3 used in the semiconductor device 1 of the present invention, any IC chip conventionally mounted on this type of semiconductor device can be used. Further, as a material of the insulating layer 5, an insulating material such as polyimide which is generally used in an IC manufacturing process can be used. Except for the pad portion 7 of the IC chip 3, the entire upper surface of the IC chip 3 is covered with the insulating layer 5.

[0010] An antenna coil 9 is formed on the upper surface of the insulating layer 5. Examples of a material for forming the antenna coil 9 include, but are not limited to, a conductive metal such as copper and aluminum and a conductive paste. The antenna coil 9 can be formed by appropriately selecting an appropriate material according to the application and characteristics. For example, as the antenna coil 9, a coil coil in which a copper wire or the like is spirally wound or a copper foil or an aluminum foil is pasted on the insulating layer 5 and etched, or a conductive coil is formed on the insulating layer 5. A paste formed by printing or plating may be used. As a means for connecting the antenna coil 9 to the pad portion 7 of the IC chip 3, direct connection by solder welding, wedge bonding, wire bonding, or face-down mounting may be applied depending on the configuration of the antenna coil 9. it can. Although the antenna coil 9 is shown as a single layer in FIG. 1, the insulating layer 5 and the antenna coil 9 may be formed in a multilayer structure.

The semiconductor device of the present invention can include other electronic circuit elements such as a power supply, a capacitor, and a resistor as necessary, in addition to the IC chip 3 and the antenna coil 9.

On the upper surface of the antenna coil 9, an insulating protective layer 11 is formed. As a material of the protective layer 11, if it is a material having an insulating property, an inorganic material (for example,
SiN) and organic materials.
However, in order to obtain higher corrosion resistance, it is preferable to use an organic polymer resin having low water permeability.

The insulating protective layer 11 in the semiconductor device of the present invention is formed of a material having an elastic modulus in a range of 1 GPa to 100 GPa. When the elastic modulus is less than 1 GPa, the elastic recovery is large, so that the blade of the cutter hardly enters during dicing, and defective products are easily generated. On the other hand, when the elastic modulus is 10
If it exceeds 0 GPa, the hardness is close to that of a metal, so that it is harder than a silicon wafer and it is difficult to cut with the same blade.
For the above reasons, when using a material having an elastic modulus of less than 1 GPa or a material having an elastic modulus of more than 100 GPa, the protective layer in the scribe area must be removed. If the protective layer is formed of a material having an elastic modulus in the range of 1 GPa to 100 GPa, dicing is possible even if there is a resin in the scribe area. The elastic modulus of the protective layer is preferably in the range of 3 GPa to 60 GPa. Ideally, the protective layer is formed from a material having an elastic modulus close to that of the silicon wafer.

In the semiconductor device of the present invention, the protective layer 11 made of an organic polymer resin is a resin containing a monomer or prepolymer having a siloxane bond as a main component, or an epoxy group, an isocyanate group, a carboxyl group, a vinyl group, an amide group. It is produced in situ by reacting a resin containing a monomer or prepolymer containing at least one of the alkoxy groups as a main component.
In particular, the resin having a siloxane bond has a higher elastic modulus as the number of siloxane bonds increases, and becomes closer to the elastic modulus of the silicon wafer. Since the resins have a low water permeability, a high moisture-proof effect can be obtained even when the film thickness is reduced, and corrosion of the antenna material due to moisture in the air can be prevented.

The above-mentioned monomers or prepolymers can be used after being diluted with a solvent or the like. In addition, various additives such as a polymerization initiator, a curing accelerator, a plasticizer, and an extender can be added to the monomers or prepolymers as needed.

As a method for forming the protective layer 11, a general method known to those skilled in the art can be appropriately selected and used. For example, if the monomer or prepolymer composition is in the form of a paint, a printing method or spin coating, a roll coater,
A method such as a coating method using a bar coater or a spray coater or a dipping method can be used.

After the above-mentioned monomer or prepolymer composition is applied to the upper surface of the antenna coil 9, the monomer or prepolymer is polymerized and / or cured by a known and conventional method such as heating or irradiation with ultraviolet light, and the organic polymer or polymer is cured in place. The protective layer 11 made of a molecular resin can be formed.

Although the thickness of the protective layer 11 is not particularly limited, if the surface is required to be flat, the thickest portion must be at least 1.2 times the thickness of the antenna coil. Is preferred. On the other hand, even when the surface does not need to be flat, it is desirable that the antenna coil be formed with a thickness of 0.14 times or more over the entire antenna coil. If the thickness is smaller than this, moisture in the atmosphere penetrates into the inside through the protective layer 11, and
In addition to the danger of corroding the antenna coil 9,
It becomes difficult to protect the antenna coil from mechanical shock.

Further, in FIG. 1, the protective layer 11 in the semiconductor device 1 of the present invention is formed only on the pattern surface side of the IC chip 3, but the protective layers 11 are formed on both surfaces of the IC chip 3. No problem.

A semiconductor device 1 as shown in FIG.
In order to cover the entire outer surface of the
See also). As a material for forming an exterior material layer that can be used for such a purpose, polyethylene terephthalate (PET), polybutylene terephthalate (PB)
T), polycarbonate (PC), polyvinyl chloride (P
VC), polyethylene (PE), polypropylene (P
General plastic films such as P), polyimide, acrylonitrile butadiene styrene copolymer (ABS), nylon 6, and nylon 66 can be used.

However, the material for forming the exterior material layer is not limited to these. Further, the protective layer 11 may also serve as an exterior material layer. Therefore, the use of the exterior material layer is not an essential requirement of the present invention.

When an exterior material layer is used, if necessary, the exterior material layer may be subjected to an easy adhesion treatment or an antistatic treatment for improving printability and handleability.
Such processing is well-known to those skilled in the art.

[0023]

The present invention will be described in more detail with reference to the following examples.

EXAMPLE 1 An insulating layer having a thickness of 3 μm was formed on an IC chip by using polyimide, and a coiled antenna coil having a height of about 5 μm was formed on the insulating layer using copper by electrolytic casting plating. did. The antenna coil was electrically connected to the IC chip at a pad portion. After forming the antenna coil, a one-part type thermosetting silicone hard coat agent (resin component 30%, M
EK 70%, elastic modulus after curing 10 GPa, containing siloxane bond) using a spin coater,
The mixture was heated in an oven at a temperature of 2 ° C. for 2 minutes to remove and cure the solvent, thereby forming a protective layer. The thickness of the protective layer 11 was about 0.7 μm on the antenna coil, and about 3 μm in the portion without the antenna coil. After forming the protective layer, dicing is performed, and the entire IC chip is subjected to ABS by molding.
Covering with resin, a coin-shaped semiconductor device A as shown in FIG. 2 was produced.

Embodiment 2 FIG. 4 is a cross-sectional view of a semiconductor device B having a structure I according to the present invention. An insulating layer having a thickness of 3 μm was formed of polyimide on the IC chip, and a coiled antenna coil having a height of about 5 μm was formed of copper on the insulating layer by electrolytic casting plating. The antenna coil was electrically connected to the IC chip at a pad portion. After forming the antenna coil, an ultraviolet-curing resin having a vinyl group (resin component 30%, toluene 70%, elastic modulus after curing 4 GPa) is applied using a spin coater, and heated in an oven at 100 ° C. for 30 minutes. After removing the solvent, the resin was cured by irradiation with ultraviolet light to form a protective layer. The thickness of the protective layer is about 1 μm on the antenna coil, and about 6 μm on the part without the antenna coil.
m, the surface was almost flat. After forming the protective layer, dicing was performed, and an IC chip was embedded in a card formed of vinyl chloride by a heat press to produce a card-type semiconductor device B as shown in FIG.

Example 3 A coin-type semiconductor device C was produced in the same manner as in Example 1, except that an epoxy resin (containing an epoxy group) having a cured elasticity of 3.2 GPa was used for the protective layer.

Example 4 A coin-type semiconductor device D was prepared in the same manner as in Example 1 by using a urethane-modified ethoxy resin (containing an isocyanate group and an epoxy group) having a cured elastic modulus of 5 GPa for the protective layer.
Was prepared.

Example 5 A coin-type semiconductor device E was manufactured in the same manner as in Example 1 except that an acrylic resin (containing an amino group and a carboxyl group) having a cured elastic modulus of 4 GPa was used for the protective layer.

Example 6 A coin-type semiconductor device F was manufactured in the same manner as in Example 1 except that an amide type silicone resin (containing an amide group and a siloxane bond) having a cured elastic modulus of 10 GPa was used for the protective layer.

Example 7 A coin-type semiconductor device G was manufactured in the same manner as in Example 1, except that an alcohol-type silicone resin (containing an alkoxy group and a siloxane bond) having a cured elastic modulus of 10 GPa was used for the protective layer.

COMPARATIVE EXAMPLE 1 An insulating layer having a thickness of 3 μm was formed of polyimide on an IC chip, and a coiled antenna coil having a height of about 5 μm made of copper was formed on the insulating layer by electrolytic casting plating. Formed. The antenna coil was electrically connected to the IC chip at a pad portion. After forming the antenna coil, dicing is performed without forming a protective layer, and an IC is formed by molding.
The entire chip was covered with an ABS resin to produce a coin-shaped semiconductor device H as shown in FIG.

Comparative Example 2 A coin-type semiconductor device I was manufactured in the same manner as in Example 1 except that a silicone resin (containing a siloxane bond) having a cured elastic modulus of 0.05 GPa was used for the protective layer.

Comparative Example 3 A coin-type semiconductor device J was produced in the same manner as in Example 1 using an acrylic resin (containing amino groups and canoleboxyl groups) having a cured elastic modulus of 110 GPa for the protective layer.
Was prepared.

Comparative Example 4 A coin-type semiconductor device K was produced in the same manner as in Example 1 except that a phenol resin having a cured elastic modulus of 7 GPa was used for the protective layer.
Was prepared.

Table 1 shows the dicing property and the change in communication characteristics before and after molding and after the environmental test in each of the semiconductor devices manufactured in Examples 1 to 7 and Comparative Examples 1 to 4. The environmental test was performed under the conditions of 85 ° C. and 85% RH for 200 hours.

[0036]

[Table 1]

As is clear from the results shown in Table 1 above, Examples 1 to 7 and Comparative Example 4 using materials having an elastic modulus of 1 GPa or more and 100 GPa or less than Comparative Example 1 in which no protective layer was provided. Low chipping and good dicing properties. On the other hand, in Comparative Example 2 in which the protective layer was formed of a resin having an elastic modulus of less than 1 GPa, the resin had a strong elastic recovery force, so that the blade was difficult to enter, and the blade was clogged, and good dicing properties could not be obtained. Was. In Comparative Example 3 in which the protective layer was formed of a resin having an elastic modulus of more than 100 GPa, a blade matching the hardness of the protective layer was used, so that the chipping increased compared to Comparative Example 1 in which the protective layer was not provided. In addition, a resin containing a monomer or a prepolymer having a siloxane bond as a main component, or a monomer or a prepolymer containing at least one of an epoxy group, an isocyanate group, a carboxyl group, a vinyl group, an amide group, and an alkoxy group as a main component In the semiconductor devices of Examples 1 to 7 and Comparative Examples 2 and 3 in which the protective layer was formed using the resin to be formed, the communication distance did not change before and after the molding and after the environmental test, but the comparative example 1 It was confirmed that the semiconductor device H manufactured by the method described above had a reduced communication distance after molding. In the semiconductor device H of Comparative Example 1, it is considered that the antenna coil was damaged or deformed. Further, the semiconductor device H
Had lost communication after the environmental test. This is A
This is probably because the water permeability of the BS resin was high, and thus the antenna material was corroded by moisture that had entered inside.

[0038]

As described above, according to the present invention,
On the upper surface of the insulating layer formed on the IC chip, a protective layer made of insulating resin was formed on the antenna coil for wireless communication electrically connected to the pad portion of the IC chip. By forming the protective layer from a material having an elastic modulus of 1 GPa or more and 100 GPa or less, dicing can be performed even if the protective layer exists in the scribe area. Further, the protective layer is a resin containing a monomer or prepolymer having a siloxane bond as a main component, or a monomer containing at least one of an epoxy group, an isocyanate group, a carboxyl group, a hydroxy group, a vinyl group, an amide group, and an alkoxy group. Alternatively, since the resin was formed by reacting a resin containing a prepolymer as a main component, the water permeability was low and an excellent moisture-proof effect could be obtained. As a result, deformation, damage, or corrosion of the antenna coil can be prevented, and handling properties are also improved, so that a highly reliable semiconductor device having stable characteristics can be manufactured.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of an example of a semiconductor device of the present invention.

FIG. 2 is a schematic sectional view of the coin-shaped semiconductor device according to the present invention manufactured in Example 1.

FIG. 3 is a schematic sectional view of a card-type semiconductor device according to the present invention manufactured in Example 2.

FIG. 4 is a schematic sectional view of a coin-shaped semiconductor device manufactured in Comparative Example 1.

FIG. 5 is a schematic sectional view of an example of a conventional semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor device of this invention 3 IC chip 5 Insulating layer 7 Pad part 9 Antenna coil 11 Protective layer 13 Exterior material layer

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification code FI Theme coat ゛ (Reference) H01L 23/31 F-term (Reference) 2C005 MA10 MA11 NA09 NB03 NB15 NB36 PA15 RA11 4M109 AA01 CA07 CA10 CA11 CA12 EA01 EA10 EA20 EC01 EC02 EC04 GA03 5B035 AA08 BA03 BA05 BB09 CA01 CA23

Claims (7)

[Claims] 1. A semiconductor device in which an antenna coil for wireless communication electrically connected to a pad portion of the IC chip is formed on an upper surface of an insulating layer formed on the IC chip. A semiconductor device having a protective layer formed thereon. 2. The semiconductor device according to claim 1, wherein said protective layer is made of an insulating organic polymer resin. 3. The method according to claim 1, wherein the protective layer has a thickness of 1 GPa to 100 GPa.
3. The semiconductor device according to claim 2, comprising an organic polymer resin having an elastic modulus in the range of: 4. The semiconductor device according to claim 3, wherein said protective layer is made of an organic polymer resin having an elastic modulus in a range of 3 GPa to 60 GPa. 5. The protective layer is obtained by polymerizing a resin having a monomer or prepolymer having a siloxane bond as a main component,
The semiconductor device according to claim 3, wherein the semiconductor device is generated on the spot by curing. 6. The protective layer is formed by polymerizing a resin mainly composed of a monomer or a prepolymer containing at least one group of an epoxy group, an isocyanate group, a carboxyl group, a vinyl group, an amide group and an alkoxy group. 4. The semiconductor device according to claim 3, wherein the semiconductor device is produced on the spot by curing. 7. The semiconductor device according to claim 1, wherein said protective layer is made of SiN.