JP2001257292A - Semiconductor device - Google Patents

Semiconductor device

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Publication number
JP2001257292A
JP2001257292A JP2000067303A JP2000067303A JP2001257292A JP 2001257292 A JP2001257292 A JP 2001257292A JP 2000067303 A JP2000067303 A JP 2000067303A JP 2000067303 A JP2000067303 A JP 2000067303A JP 2001257292 A JP2001257292 A JP 2001257292A
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Japan
Prior art keywords
semiconductor device
protective layer
antenna coil
group
resin
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Pending
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JP2000067303A
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Japanese (ja)
Inventor
Ryuzo Fukao
Keiko Kurata
桂子 倉田
隆三 深尾
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Hitachi Maxell Ltd
日立マクセル株式会社
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Priority to JP2000067303A priority Critical patent/JP2001257292A/en
Publication of JP2001257292A publication Critical patent/JP2001257292A/en
Application status is Pending legal-status Critical

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Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device wherein corrosion of an antenna material inside and/or deformation or damage of an antenna coil portion hardly occur. SOLUTION: This semiconductor device is constructed by forming an antenna coil for radio communication electrically connected with a pad portion of an IC chip on the upper surface of an insulating layer formed on the IC chip. An insulating protection layer is formed on the antenna coil.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は、リーダライタからの電力受給とリーダライタとの間の信号の送受信とを無線によって行う非接触ICカードで代表される半導体装置に関する。 The present invention relates to relates to a semiconductor device typified transmission and reception in a non-contact IC card performed by the radio signal between the power receiving and the reader-writer from the reader writer. 更に詳細には、本発明は、内部のアンテナ材料の腐食及び/又はアンテナコイル部分の変形や損傷が発生し難い半導体装置に関する。 More particularly, the present invention provides corrosion and / or deformation and damage relating hardly semiconductor device generation of the antenna coil part of the interior of the antenna material.

【0002】 [0002]

【従来の技術】ICが搭載されたカード型、タグ型又はコイン型などの半導体装置は、豊富な情報量と高いセキュリティ性能を備えていることから、交通、流通および情報通信分野で普及が進んでいる。 BACKGROUND OF THE INVENTION IC is mounted on the card type, a semiconductor device such as a tag type or coin type, since it has a wealth of information quantity and high security performance, traffic, it is spread in the distribution and the information communication field progressed They are out. 中でも、基体に外部端子を設けず、電力供給と信号の送受信とを無線方式によって行う非接触式の半導体装置は、接続端子から入る静電気によるデータの破壊や接触不良によるデータの誤りや送受信不能等の問題が発生しないため、最近注目を集めている。 Among them, without providing the external terminal on the substrate, a non-contact type semiconductor device that performs transmission and reception of the power supply and signal by the radio system, the static electricity due to inability error or transmission and reception of data by disruption or contact failure data or the like entering from the connection terminal because the problem does not occur, it has attracted attention recently.

【0003】前記非接触式の半導体装置は、例えば、図5に示すように、ICチップ51と、前記ICチップのパッド部に接続された無線通信用アンテナコイル52からなる回路モジュールを塩化ビニル樹脂などの外装材5 [0003] The non-contact type semiconductor device, for example, as shown in FIG. 5, the IC chip 51, a vinyl chloride resin the circuit module consisting of the IC radio communication antenna coil 52 connected to the pad portion of the chip exterior materials, such as 5
3に熱融着により固定した構造が提案されている。 Fixed structure has been proposed by thermal fusion to 3.

【0004】前記半導体装置のアンテナコイルは、一般的に巻線コイルや絶縁基板上に導電性ペーストや金属膜のよりパターンを形成したものが用いられるが、より小型の半導体装置を実現するため、ICチップ上にアンテナコイルを形成したものも提案されている(例えば、特許第2982286号公報参照)。 [0004] For the antenna coil of the semiconductor device is generally made by forming a more patterns of conductive paste or metal film winding coils and insulating substrate is used, to achieve a more compact semiconductor device, those forming the antenna coil on the IC chip has also been proposed (e.g., see Japanese Patent No. 2982286).

【0005】ところで、ICチップ上にアンテナコイルを形成した場合、その材料としては、銅やアルミニウムなどの導電性金属が用いられるが、前記金属材料は大気中に放置すると容易に腐食される。 Meanwhile, in the case of forming the antenna coil on the IC chip, as the material thereof, although a conductive metal such as copper or aluminum is used, the metallic material is easily corroded when left in the atmosphere. 更に、前記半導体装置は実用性を考慮すると、外装材を設けたり、樹脂などに埋め込んで各種形状に加工して使用することが望ましい。 Furthermore, the when the semiconductor device is practical considerations, may be provided exterior material, it is desirable to use processed into various shapes embedded like resin. しかし、その過程でアンテナ部分が変形したり、傷がつくことが懸念される。 However, the antenna portion is deformed or in the process, that the scratches are concerned. アンテナ材料の腐食及び/又はアンテナコイル部分の変形、損傷などが発生すると、 Deformation of the corrosion and / or antenna coil portion of the antenna material, the damage such as occurs,
アンテナの電気的特性が変化し、安定した通信特性は得られない。 Electrical characteristics of the antenna is changed, stable communication characteristics can not be obtained.

【0006】 [0006]

【発明が解決しようとする課題】従って、本発明の目的は、内部のアンテナ材料の腐食及び/又はアンテナコイル部分の変形や損傷が発生し難い半導体装置を提供することである。 OBJECTS OF THE INVENTION It is therefore an object of the present invention is to provide corrosion and / or deformation or damage is unlikely semiconductor device generation of the antenna coil part of the interior of the antenna material.

【0007】 [0007]

【課題を解決するための手段】前記課題は、ICチップ上に形成した絶縁層の上面に前記ICチップのパッド部で電気的に接続された無線通信用のアンテナコイルを形成してなる半導体装置において、前記アンテナコイル上に絶縁性の保護層を形成することにより解決される。 The problems SUMMARY OF THE INVENTION A semiconductor device obtained by forming an electrically connected antenna coil for wireless communication with the pad portion of the IC chip on the upper surface of the insulating layer formed on an IC chip in is solved by forming an insulating protective layer on the antenna coil. 前記保護層を形成することにより、アンテナ形成後の工程で、アンテナ材料が大気により腐食されたり、アンテナコイルの変形や損傷の発生を防止することができる。 By forming the protective layer, in a later step antennas formation, or antenna material is corroded by the atmosphere, it is possible to prevent the occurrence of deformation or damage of the antenna coil.

【0008】 [0008]

【発明の実施の形態】以下、図面を参照しながら本発明の半導体装置について具体的に説明する。 DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, concrete description will be given of a semiconductor device of the present invention with reference to the drawings. 図1は本発明の半導体装置の一例の概要断面図である。 Figure 1 illustrates an example overview sectional view of a semiconductor device of the present invention. 図示されているように、本発明の半導体装置1は、ICチップ3上に形成した絶縁層5の上面に前記ICチップのパッド部7 As shown, the semiconductor device 1 of the present invention, the the upper surface of the insulating layer 5 formed on the IC chip 3 IC chip pad section 7
で電気的に接続された無線通信用のアンテナコイル9を形成し、前記アンテナコイル9上に絶縁性の保護層11 In electrically connected to form an antenna coil 9 for wireless communication, the antenna coil 9 an insulating protective layer on 11
を形成している。 To form a. パッド部7の部分には絶縁層5が存在しないので、アンテナコイル9をパッド部7に電気的に接続することができる。 Since the portion of the pad portion 7 no insulating layer 5, it is possible to electrically connect the antenna coil 9 on the pad section 7. 前記保護層11はアンテナ9の電気的特性に悪影響を及ぼさない絶縁性の樹脂からなる。 The protective layer 11 is made of an insulating resin that does not adversely affect the electrical characteristics of the antenna 9. 前記保護層11を設けることにより、アンテナコイル9形成後の工程におけるアンテナコイル9の変形や損傷の発生を防止することができ、ハンドリング性も向上する。 Wherein by providing the protective layer 11, it is possible to prevent deformation or damage of the antenna coil 9 of the antenna coil 9 forming a later step, to improved handling properties.

【0009】本発明の半導体装置1に用いられるICチップ3としては、従来からこの種の半導体装置に搭載されている任意のICチップを用いることができる。 [0009] As the semiconductor device IC chip 3 used in 1 of the present invention can be any IC chip mounted on the semiconductor device of this kind conventionally. また、絶縁層5の材料としては、IC製造工程で一般的に使用されているポリイミドなどの絶縁材料を用いることができる。 As a material of the insulating layer 5, it is possible to use an insulating material such as polyimide are commonly used in IC manufacturing process. ICチップ3のパッド部7を除いて、ICチップ3の上面全体が絶縁層5により被覆されている。 Except for the pad portion 7 of the IC chip 3, the entire top surface of the IC chip 3 is covered with the insulating layer 5.

【0010】絶縁層5の上面にアンテナコイル9が形成されている。 [0010] antenna coil 9 is formed on the upper surface of the insulating layer 5. アンテナコイル9の形成材料としては、銅やアルミニウム等の導電性金属や導電性ペーストが挙げられるが、これらだけに限定されない。 As the material for forming the antenna coil 9, including but conductive metal or a conductive paste such as copper or aluminum, but it is not limited to. 用途や特性に応じて適当な材料を適宜選択してアンテナコイル9を形成することができる。 It is possible to form the antenna coil 9 by selecting an appropriate material appropriate according to the use and characteristics. 例えば、アンテナコイル9としては、銅線などを渦巻き状にまいた巻き線コイルや絶縁層5上に銅箔またはアルミ箔を貼り付け、エッチングして形成したもの、あるいは絶縁層5上に導電性ペーストを印刷又はメッキして形成したものなどが挙げられる。 For example, the antenna coil 9, a copper wire adhered copper foil or aluminum foil on the winding coil and the insulating layer 5 formed by spirally winding, those that have been formed by etching, or conductive on the insulating layer 5 such as those formed by printing or plating the paste and the like. アンテナコイル9のICチップ3のパッド部7への接続手段としては、前記アンテナコイル9の構成に応じて、はんだ溶接、ウェッジボンディング、ワイヤボンディングなどによる直接接続或いはフェースダウン実装などを適用することができる。 The connecting means to the IC chip 3 of the pad section 7 of the antenna coil 9, depending on the configuration of the antenna coil 9, solder welding, wedge bonding, it is applied such as direct connection or face-down mounting by wire bonding it can. また、図1では、前記アンテナコイル9は単層として図示されているが、絶縁層5とアンテナコイル9を多層構造に形成することもできる。 Further, in FIG. 1, the antenna coil 9 is illustrated as a single layer, but may be formed an insulating layer 5 and the antenna coil 9 in a multilayer structure.

【0011】本発明の半導体装置は、ICチップ3およびアンテナコイル9の他に、電源、コンデンサ、抵抗器などのその他の電子回路素子類を必要に応じて内包することもできる。 [0011] The semiconductor device of the present invention can be in addition to the IC chip 3 and the antenna coil 9, a power supply, a capacitor, also be included as needed other electronic circuit elements such as resistors.

【0012】アンテナコイル9の上面には、絶縁性の保護層11が形成されている。 [0012] the upper surface of the antenna coil 9, an insulating protective layer 11 is formed. 保護層11の材料としては、絶縁性を有する材料であれば、無機材料(例えば、 As the material of the protective layer 11, as long as the material has an insulating property, inorganic materials (e.g.,
SiN)及び有機材料の別無く使用することができる。 It can be different without the use of SiN) and organic materials.
しかし、より高い耐食性を得るためには、透水性に低い有機高分子樹脂を使用することが好ましい。 However, in order to obtain higher corrosion resistance, it is preferable to use a low organic polymer resin to water permeability.

【0013】本発明の半導体装置における絶縁性の保護層11は、弾性率が1GPa〜100GPaの範囲内の材料で形成される。 [0013] The protective layer 11 of insulating the semiconductor device of the present invention, the elastic modulus is formed of a material in the range of 1GPa~100GPa. 弾性率が1GPa未満の場合、弾性回復が大きいため、ダイシングする際にカッターの刃が入り難く、不良品が発生しやすい。 If the elastic modulus of less than 1 GPa, because a large elastic recovery, difficult to enter the cutter blade during the dicing, it is likely to occur defective. 一方、弾性率が10 On the other hand, the elastic modulus is 10
0GPa超の場合、硬度が金属に近くなるため、シリコンウエハより硬くなり、同じ刃で切るのが困難になる。 For 0GPa greater than the hardness is close to the metal becomes harder than the silicon wafer, it is difficult to cut with the same cutter.
以上の理由から、弾性率が1GPaより小さい材料、あるいは、弾性率が100GPaより大きい材料を使用する際は、スクライブエリアの保護層を除去しなければならない。 For these reasons, the elastic modulus 1GPa less material or, when the elastic modulus using a 100GPa larger material must remove the protective layer of the scribe area. 前記保護層が1GPa〜100GPaの範囲内の弾性率を有する材料で形成されていれば、スクライブエリアに樹脂があってもダイシングは可能である。 It is formed of a material having a modulus of elasticity in the range wherein the protective layer is 1GPa~100GPa, even if the resin in the scribe area dicing is possible. 前記保護層の弾性率は3GPa〜60GPaの範囲内であることが好ましい。 Elastic modulus of the protective layer is preferably in the range of 3GPa~60GPa. シリコンウエハの弾性率に近い弾性率を有する材料から保護層を形成することが理想的である。 It is ideal to form a protective layer of a material having a close modulus to the elastic modulus of the silicon wafer.

【0014】本発明の半導体装置における有機高分子樹脂からなる保護層11は、シロキサン結合を有するモノマー又はプレポリマーを主成分とする樹脂あるいは、エポキシ基、イソシアネート基、カルボキシル基、ビニル基、アミド基、アルコキシ基のうちの少なくとも1種類の基を含有するモノマー又はプレポリマーを主成分とする樹脂を反応させることにより、その場で生成される。 [0014] protective layer 11 made of an organic polymer resin in the semiconductor device of the present invention, resin or composed mainly of monomers or prepolymers having a siloxane bond, an epoxy group, an isocyanate group, a carboxyl group, a vinyl group, an amide group , by reacting the resin composed mainly of a monomer or prepolymer containing at least one of the radicals alkoxy group is generated in situ.
特に、シロキサン結合を有する樹脂は、シロキサン結合の多いものほど弾性率が大きく、よりシリコンウエハの弾性率に近くなる。 In particular, a resin having a siloxane bond has an elastic modulus as those with many siloxane bonds is large, it becomes closer to the modulus of the silicon wafer. 前記樹脂類は透水率が低いため、膜厚を薄くしても高い防湿効果が得られ、空気中の水分によるアンテナ材料の腐食を防止することができる。 The resins are for water permeability is low, even a small thickness provides high moisture-proof, it is possible to prevent corrosion of the antenna material due to moisture in the air.

【0015】前記のようなモノマー又はプレポリマー類は溶剤などで希釈して使用することもできる。 [0015] monomers or prepolymers as described above can also be used diluted or solvents. また、モノマー又はプレポリマー類には必要に応じて、重合開始剤、硬化促進剤、可塑剤、増量剤などのような各種添加剤を配合することもできる。 Further, it is the monomer or prepolymers optionally a polymerization initiator, a curing accelerator, a plasticizer, also contain various additives such as a bulking agent.

【0016】保護層11の形成方法としては、当業者に公知の一般的な方法を適宜選択して使用することができる。 [0016] As a method for forming the protective layer 11 may be appropriately selected and used common methods known to those skilled in the art. 例えば、モノマー又はプレポリマー組成物が塗料状であれば、印刷法又はスピンコート、ロールコーター、 For example, if the monomer or prepolymer composition is a paint-like, a printing method or a spin coating, a roll coater,
バーコーター、スプレーコーターによる塗布法あるいは浸漬法などの方法を使用できる。 Bar coater, a method such as coating method or a dipping method with a spray coater can be used.

【0017】アンテナコイル9の上面に前記モノマー又はプレポリマー組成物を塗布した後、加熱又は紫外線照射などの公知慣用の方法により、モノマー又はプレポリマーを重合及び/又は硬化させ、その場で有機高分子樹脂からなる保護層11を形成させることができる。 [0017] After coating the monomer or prepolymer composition on the top surface of the antenna coil 9, by known conventional methods such as heating or ultraviolet irradiation, the monomer or prepolymer polymerizable and / or cured, organic high in situ it is possible to form a protective layer 11 made of molecular resin.

【0018】また、保護層11の厚さは特に限定されるものではないが、表面に平坦性が求められる場合は、最も厚い部分が、アンテナコイルの厚さの1.2倍以上であることが好ましい。 [0018] The thickness of the protective layer 11 is not particularly limited, if the flatness is required on the surface, the thickest portion, it is at least 1.2 times the thickness of the antenna coil It is preferred. 一方、表面に平坦性が必要ない場合でも、アンテナコイル全体に0.14倍以上の厚さで形成されていることが望ましい。 On the other hand, even if there is no need flatness on the surface, it is preferably formed by more than 0.14 times the entire antenna coil thickness. これよりも薄くなると、大気中の水分が保護層11を通して内部に侵入し、 Becomes thinner than this, it penetrates into atmospheric moisture through the protective layer 11,
アンテナコイル9を腐食させる危険性があるばかりか、 Not only there is a risk of corrosion of the antenna coil 9,
アンテナコイルを機械的な衝撃から保護することが困難となる。 It is difficult to protect the antenna coil from mechanical shock.

【0019】さらに、図1においては、本発明の半導体装置1における保護層11はICチッブ3のパターン面側のみに形成されているが、前記ICチッブ3の両面に保護層11が形成されていても何の問題もない。 Furthermore, in Figure 1, the protective layer 11 in the semiconductor device 1 of the present invention is formed only on the pattern surface side of the IC Chibbu 3, has a protective layer 11 is formed on both surfaces of the IC Chibbu 3 even if there is no problem.

【0020】また、図1に示されるような半導体装置1 Further, the semiconductor device as shown in FIG. 1 1
の外面全体を被覆するために、別の外装材層13(図2 To coat the entire outer surface of another of the outer package layer 13 (FIG. 2
参照)を施すこともできる。 Reference) can also be subjected. このような目的に使用可能な外装材層形成材料としては、ポリエチレンテレフタレート(PET)、ポリブチレンテレフタレート(PB As the exterior material layer-forming material usable for this purpose, polyethylene terephthalate (PET), polybutylene terephthalate (PB
T)、ポリカーボネート(PC)、ポリ塩化ビニル(P T), polycarbonate (PC), polyvinyl chloride (P
VC)、ポリエチレン(PE)、ポリプロピレン(P VC), polyethylene (PE), polypropylene (P
P)、ポリイミド、アクリロニトリルブタジエンスチレン共重合体(ABS)、ナイロン6、ナイロン66などの一般的なプラスチックフィルムを用いることができる。 P), polyimide, acrylonitrile butadiene styrene copolymer (ABS), nylon 6, it is possible to use a common plastic film such as nylon 66.

【0021】しかし、外装材層形成材料はこれらに限定されるものではない。 [0021] However, the exterior material layer-forming material is not limited thereto. また、前記保護層11が外装材層を兼ねていても良い。 The protective layer 11 may also serve as an exterior material layer. 従って、外装材層の使用は本発明の必須要件ではない。 Therefore, use of the outer package layer is not a requirement of the present invention.

【0022】また、外装材層を使用する場合、必要に応じて、外装材層に対して、印刷性や取扱性の向上を図るための易接着処理や帯電防止処理を施すこともできる。 Further, when using an outer material layer, if necessary, with respect to the outer material layer, an easily adhesive treatment or antistatic treatment may be subjected to improve printability and handling properties.
このような処理は当業者に周知である。 Such processes are well known to those skilled in the art.

【0023】 [0023]

【実施例】以下、実施例により本発明を具体的に例証しながら更に詳細に説明する。 EXAMPLES The following will be described in further detail with specific illustrative of the present invention through examples.

【0024】実施例1 ICチップ上にポリイミドにより厚さ3μmの絶縁層を形成し、さらに、絶縁層の上に電解鋳造めっき法を用い、銅で高さ約5μmの巻線状アンテナコイルを形成した。 [0024] Example 1 to form an insulating layer having a thickness of 3μm by polyimide on IC chip, further, using the electrolytic casting plating on the insulating layer, forming a wound wire antenna coil height of about 5μm copper did. 前記アンテナコイルはICチッブとパツド部で電気的に接続した。 The antenna coil is electrically connected with IC Chibbu and pads unit. 前記アンテナコイルを形成後、一液型熱硬化型シリコーンハードコート剤(樹脂成分30%,M Wherein after forming the antenna coil, one-part type heat curable silicone hard coating agent (resin component 30%, M
EK70%,硬化後の弾性率10GPa,シロキサン結合含有)をスピンコーターを用いて塗布した後、150 EK70%, after elastic modulus 10GPa after curing, the siloxane bond-containing) was coated using a spin coater, 150
℃のオーブンで2分間加熱して溶媒除去およぴ硬化を行い、保護層を形成した。 ℃ oven and heated for 2 minutes perform solvent removal Contact Yopi curing, to form a protective layer. 前記保護層11の厚さは、アンテナコイル上で約0.7μm、アンテナコイルがない部分は約3μmであった。 The thickness of the protective layer 11 is about 0.7 [mu] m, there is no antenna coil portions on the antenna coil was about 3 [mu] m. 保護層を形成後、ダイシングを行い、さらに、モールドによりICチツブ全体をABS After forming the protective layer, diced, further, the entire IC granule application by molding ABS
樹脂で覆い、図2に示されるようなコイン型の半導体装置Aを作製した。 Covered with a resin, to prepare a coin-type semiconductor device A as shown in FIG.

【0025】実施例2 図4に本発明の構成Iこよる半導体装置Bの断面図を示す。 [0025] illustrates a cross-sectional view of a structure I Koyoru semiconductor device B of the present invention in Example 2. FIG. ICチップ上にポリイミドにより厚さ3μmの絶縁層を形成し、さらに、前記絶縁層の上に電解鋳造めっき法を用い、銅で高さ約5μmの巻線状アンテナコイルを形成した。 An insulating layer having a thickness of 3μm by polyimide on IC chip, further, using the electrolytic casting plating on the insulating layer to form a winding-shaped antenna coil height of about 5μm copper. 前記アンテナコイルはICチッブとパッド部で電気的に接続した。 The antenna coil is electrically connected with IC Chibbu and the pad portion. 前記アンテナコイルを形成後、ビニル基を有する紫外線硬化樹脂(樹脂成分30%,トルエン70%,硬化後の弾性率4GPa)をスピンコーターを用いて塗布し、100℃のオーブンで30分加熱して溶媒を除去した後、紫外光を照射して樹脂を硬化させて保護層を形成した。 After forming the antenna coil, an ultraviolet curable resin having a vinyl group (30% resin component 70% toluene, modulus 4GPa after curing) was applied using a spin coater, and heated for 30 minutes at 100 ° C. in an oven after removal of the solvent, to form a protective layer by irradiation with ultraviolet light to cure the resin. 前記保護層の厚さは、アンテナコイル上で約1μm、アンテナコイルがない部分は約6μ The thickness of the protective layer is about 1μm on the antenna coil, there is no antenna coil portion approximately 6μ
mで、表面はほぼ平坦な状態であった。 In m, the surface was almost flat. 保護層を形成後、ダイシングを行い、塩化ビニルで成形したカードに加熱プレスによりICチッブを埋め込み、図3に示されるようなカード型の半導体装置Bを作製した。 After forming the protective layer, diced, embedded IC Chibbu by heat pressing to molded cards with vinyl chloride to prepare a semiconductor device B of the card type as shown in FIG.

【0026】実施例3 保護層に硬化後の弾性率が3.2GPaのエボキシ樹脂(エポキシ基含有)を用いて、実施例1と同様の方法でコイン型半導体装置Cを作製した。 The elastic modulus after curing to Example 3 protective layer using Ebokishi resin 3.2 GPa (epoxy group-containing), to prepare a coin-type semiconductor device C in the same manner as in Example 1.

【0027】実施例4 保護層に硬化後の弾性率が5GPaのウレタン変性エボキシ樹脂(イソシアネート基およぴエポキシ基含有)を用いて、実施例1と同様の方法でコイン型半導体装置D [0027] Using Example 4 elastic modulus after curing the protective layer is 5GPa urethane-modified Ebokishi resin (isocyanate group Contact Yopi epoxy group-containing), a coin-type semiconductor device D in the same manner as in Example 1
を作製した。 It was produced.

【0028】実施例5 保護層に硬化後の弾性率が4GPaのアクリル樹脂(アミノ基,カルボキシル基含有)を用いて、実施例lと同様の方法でコイン型半導体装置Eを作製した。 [0028] Example 5 elastic modulus after curing the protective layer is 4GPa acrylic resin (an amino group, a carboxyl group-containing) was used to prepare a coin-type semiconductor device E in Example l and the same method.

【0029】実施例6 保護層に硬化後の弾性率が10GPaのアミド型シリコーン樹脂(アミド基およびシロキサン結合含有)を用いて、実施例1と同様の方法でコイン型半導体装置Fを作製した。 The elastic modulus after curing to Example 6 the protective layer by using an amide-type silicone resin (amide group and siloxane bond-containing) of 10 GPa, to prepare a coin-type semiconductor device F in the same manner as in Example 1.

【0030】実施例7 保護層に硬化後の弾性率が10GPaのアルコール型シリコーン樹脂(アルコキシ基およびシロキサン結合含有)を用いて、実施例1と同様の方法でコイン型半導体装置Gを作製した。 The elastic modulus after curing to Example 7 the protective layer by using an alcohol type silicone resin 10 GPa (alkoxy and siloxane bond-containing), to prepare a coin-type semiconductor device G in the same manner as in Example 1.

【0031】比較例1 ICチッブ上にポリイミドにより厚さ3μmの絶縁層を形成し、さらに、前記絶縁層の上に電解鋳造めっき法を用い、銅で高さ約5μmの巻線状アンテナコイルを形成した。 [0031] Comparative Example 1 to form an insulating layer having a thickness of 3μm by polyimide on IC Chibbu, further using an electrolytic casting plating on the insulating layer, the winding wire antenna coil height of about 5μm copper the formed. 前記アンテナコイルはICチッブとパッド部で電気的に接続した。 The antenna coil is electrically connected with IC Chibbu and the pad portion. 前記アンテナコイルを形成後、保護層は形成せずに、ダイシングを行い、モールドによりIC After forming the antenna coil, without the protective layer is formed, diced, IC by molding
チツプ全体をABS樹脂で覆い、図4に示されるようなコイン型の半導体装置Hを作製した。 The whole is covered with ABS resin chip to produce a coin-type semiconductor device H as shown in FIG.

【0032】比較例2 保護層に硬化後の弾性率が0.05GPaのシリコーン樹脂(シロキサン結合含有)を用いて、実施例lと同様の方法でコイン型半導体装置Iを作製した。 [0032] Using the modulus 0.05GPa silicone resin after curing to Comparative Example 2 protective layer (siloxane bond-containing), to prepare a coin-type semiconductor device I in Example l and the same method.

【0033】比較例3 保護層に硬化後の弾性率が110GPa金属繊維含有アクリル樹脂(アミノ基およびカノレボキシル基含有)を用いて、実施例1と同様の方法でコイン型半導体装置J [0033] Comparative Example 3 elastic modulus after curing the protective layer by using a 110GPa metal fiber-containing acrylic resin (amino group and Kanorebokishiru group-containing), a coin-type semiconductor device J in the same manner as in Example 1
を作製した。 It was produced.

【0034】比較例4 保護層に硬化後の弾性率が7GPaのフェノール樹脂を用いて、実施例1と同様の方法でコイン型半導体装置K [0034] Comparative Example 4 using a modulus 7GPa phenolic resin after curing the protective layer, a coin-type semiconductor device K in the same manner as in Example 1
を作製した。 It was produced.

【0035】上記実施例1〜7および比較例1〜4で作製された各半導体装置におけるダイシング性、成形前後およぴ環境試験後の通信特性の変化を表1に示す。 The illustrated dicing property of each of the semiconductor device manufactured in the above Examples 1 to 7 and Comparative Examples 1 to 4, a change in communication characteristics after you Yopi environmental test before and after molding in Table 1. 環境試験は85℃、85%RHの条件下で200時間実施した。 Environmental test 85 ° C., was carried for 200 hours under the conditions of RH 85%.

【0036】 [0036]

【表1】 [Table 1]

【0037】前記の表1に示された結果から明らかなように、弾性率が1GPa以上100GPa以下の材料を用いた実施例1〜7および比較例4は保護層を設けなかった比較例1よりチッピングが少なく、良好なダイシング性を示した。 As is apparent from the results shown in Table 1 above, Comparative Example 1 the elastic modulus Examples 1 to 7 and Comparative Example 4 were used 100GPa following materials than 1GPa is that did not form a protective layer chipping less showed good dicing property. 一方、保護層を弾性率が1GPaより小さい樹脂で形成した比較例2では、樹脂の弾性回復力が強いため、刃が入りにくく、さらにブレードの目詰まりが生じ、良好なダイシング性は得られなかった。 On the other hand, in Comparative Example 2 modulus protective layer was formed by 1GPa smaller resin, a strong elastic recovery force of the resin, the blade is prevented from entering further caused clogging of the blade, good dicing property is not obtained It was. 保護層を弾性率が100GPaより大きい樹脂で形成した比較例3では、保護層の堅さに合わせたブレードを使用したため、保護層を設けなかった比較例1に比ベチッピングが増加した。 In Comparative Example 3 Modulus protective layer was formed by 100GPa greater resins, due to the use of the blade that matches the consistency of the protective layer, the ratio Bechippingu increased in Comparative Example 1 was not provided a protective layer. また、シロキサン結合を有するモノマー又はプレポリマーを主成分とする樹脂あるいは、エポキシ基、イソシアネート基、カルボキシル基、ビニル基、アミド基、アルコキシ基のうち少なくとも1種類を含むモノマー又はプレポリマーを主成分とする樹脂を用いて保護層を形成した実施例1〜7およぴ比較例2〜3の半導体装置は成形前後およぴ環境試験後で通信距離に変化は見られなかったが、比較例1で作製した半導体装置Hは成形後に通信距離の低下が確認された。 The resin or composed mainly of monomers or prepolymers having a siloxane bond, an epoxy group, an isocyanate group, a carboxyl group, a vinyl group, an amide group, a main component monomer or prepolymer comprises at least one of the alkoxy groups to While changes in the communication distance of the semiconductor device of embodiment 1-7 Oyopi Comparative examples 2-3 was formed a protective layer after contact Yopi environmental tests before and after molding using a resin was not observed, Comparative example 1 the semiconductor device H is decreased communication distance after the molding produced was confirmed in. 比較例1の半導体装置Hでは、アンテナコイルに傷がついたか、又は変形が生じたものと思われる。 In the semiconductor device H of Comparative Example 1, whether or scratches in the antenna coil, or variations are believed to be caused. さらに、前記半導体装置H Furthermore, the semiconductor device H
は環境試験後に通信ができなくなっていた。 Was no longer able to communicate after the environmental test. これは、A This is, A
BS樹脂の透水性が高いために、内部に侵入した水分によりアンテナ材料が腐食したためと思われる。 Because of the high water permeability of the BS resin, the antenna material seems to be due to corroded by moisture entered inside.

【0038】 [0038]

【発明の効果】以上説明したように、本発明によれば、 As described in the foregoing, according to the present invention,
ICチップ上に形成した絶縁層の上面にICチツプのパッド部に電気的に接続された無線通信用のアンテナコイル上に、絶縁性の樹脂からなる保護層を形成した。 Electrically connected to the radio communication antenna on coil pad of the IC chip on the upper surface of the insulating layer formed on an IC chip, to form a protective layer made of an insulating resin. 前記保護層を弾性率が1GPa以上100GPa以下の材料で形成したことにより、スクライブエリアにも保護層が存在していてもダイシングを可能にした。 By elastic modulus the protective layer was formed by 100GPa following materials above 1 GPa, and enables dicing even if also exist protective layer in the scribe area. さらに、前記保護層をシロキサン結合を有するモノマー又はプレポリマーを主成分とする樹脂あるいは、エポキシ基、イソシアネート基、カルボキシル基、ヒドロキシ基、ビニル基、アミド基、アルコキシ基のうち少なくとも1種類を含むモノマー又はプレポリマーを主成分とする樹脂を反応させて形成したことにより、透水性が低く、優れた防湿効果を得ることができた。 Further, the resin composed mainly of monomers or prepolymers having a siloxane bond the protective layer or an epoxy group, isocyanate group, carboxyl group, hydroxy group, a vinyl group, an amide group, a monomer containing at least one kind of alkoxy group or by a prepolymer formed by reacting a resin composed mainly, low water permeability, it was possible to obtain an excellent moisture-proof effect. その結果、アンテナコイルの変形、傷つきあるいは腐食を防止することができ、さらにハンドリング性も向上するため、特性の安定した信頼性の高い半導体装置を作製することができる。 As a result, deformation of the antenna coil, damaged or it is possible to prevent corrosion, for further improved handling property, it is possible to generate a stable and reliable semiconductor device characteristics.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の半導体装置の一例の概要断面図である。 1 is an example outline cross-sectional view of a semiconductor device of the present invention.

【図2】実施例1で作製された本発明によるコイン型の半導体装置の概要断面図である。 Is a schematic cross-sectional view of a coin-type semiconductor device according to the invention, FIG prepared in Example 1.

【図3】実施例2で作製された本発明によるカード型の半導体装置の概要断面図である。 3 is a schematic cross-sectional view of the card-type semiconductor device of the present invention produced in Example 2.

【図4】比較例1で作製されたコイン型の半導体装置の概要断面図である。 4 is a schematic cross-sectional view of the fabricated coin-type semiconductor device in Comparative Example 1.

【図5】従来の半導体装置の一例の概要断面図である。 FIG. 5 is an example outline sectional view of a conventional semiconductor device.

【符号の説明】 DESCRIPTION OF SYMBOLS

1 本発明の半導体装置 3 ICチップ 5 絶縁層 7 パッド部 9 アンテナコイル 11 保護層 13 外装材層 The semiconductor device 3 IC chip 5 insulating layer 7 pad portion 9 the antenna coil 11 protective layer 13 the outer package layer of one invention

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl. 7識別記号 FI テーマコート゛(参考) H01L 23/31 Fターム(参考) 2C005 MA10 MA11 NA09 NB03 NB15 NB36 PA15 RA11 4M109 AA01 CA07 CA10 CA11 CA12 EA01 EA10 EA20 EC01 EC02 EC04 GA03 5B035 AA08 BA03 BA05 BB09 CA01 CA23 ────────────────────────────────────────────────── ─── of the front page continued (51) Int.Cl. 7 identification mark FI theme Court Bu (reference) H01L 23/31 F-term (reference) 2C005 MA10 MA11 NA09 NB03 NB15 NB36 PA15 RA11 4M109 AA01 CA07 CA10 CA11 CA12 EA01 EA10 EA20 EC01 EC02 EC04 GA03 5B035 AA08 BA03 BA05 BB09 CA01 CA23

Claims (7)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 ICチップ上に形成した絶縁層の上面に前記ICチップのパッド部で電気的に接続された無線通信用のアンテナコイルを形成してなる半導体装置において、 前記アンテナコイル上に絶縁性の保護層を形成したことを特徴とする半導体装置。 1. A semiconductor device obtained by forming an antenna coil for radio communication which is electrically connected to the upper surface of the insulating layer formed on the IC chip pad portion of the IC chip, the insulating on the antenna coil wherein a formation of the sex protective layer.
  2. 【請求項2】 前記保護層が絶縁性の有機高分子樹脂からなることを特徴とする請求項1に記載の半導体装置。 2. A semiconductor device according to claim 1, wherein the protective layer is characterized by comprising the insulating organic polymer resin.
  3. 【請求項3】 前記保護層が、1GPa〜100GPa Wherein the protective layer is, 1GPa~100GPa
    の範囲内の弾性率を有する有機高分子樹脂からなることを特徴とする請求項2に記載の半導体装置。 The semiconductor device according to claim 2, characterized in that it consists of an organic polymer resin having a modulus of elasticity in the range of.
  4. 【請求項4】 前記保護層が、3GPa〜60GPaの範囲内の弾性率を有する有機高分子樹脂からなることを特徴とする請求項3に記載の半導体装置。 Wherein said protective layer is a semiconductor device according to claim 3, characterized in that it consists of an organic polymer resin having a modulus of elasticity in the range of 3GPa~60GPa.
  5. 【請求項5】 前記保護層が、シロキサン結合を有するモノマー又はプレポリマーを主成分とする樹脂を重合、 Wherein said protective layer is polymerized resin composed mainly of monomers or prepolymers having a siloxane bond,
    硬化させることによりその場で生成されたものであることを特徴とする請求項3に記載の半導体装置。 The semiconductor device according to claim 3, characterized in that one that was generated in situ by curing.
  6. 【請求項6】 前記保護層が、エポキシ基、イソシアネート基、カルボキシル基、ビニル基、アミド基、アルコキシ基のうちの少なくとも1種類の基を含有するモノマー又はプレポリマーを主成分とする樹脂を重合、硬化させることによりその場で生成されたものであることを特徴とする請求項3に記載の半導体装置。 Wherein said protective layer is an epoxy group, an isocyanate group, a carboxyl group, a vinyl group, an amide group, polymerizing the resin composed mainly of a monomer or prepolymer containing at least one of the radicals alkoxy group the semiconductor device according to claim 3, characterized in that one that was generated in situ by curing.
  7. 【請求項7】 前記保護層がSiNからなることを特徴とする請求項1に記載の半導体装置。 7. A semiconductor device according to claim 1, wherein the protective layer is made of SiN.
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