JP2001237456A5 - - Google Patents

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Publication number
JP2001237456A5
JP2001237456A5 JP2000048880A JP2000048880A JP2001237456A5 JP 2001237456 A5 JP2001237456 A5 JP 2001237456A5 JP 2000048880 A JP2000048880 A JP 2000048880A JP 2000048880 A JP2000048880 A JP 2000048880A JP 2001237456 A5 JP2001237456 A5 JP 2001237456A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000048880A
Other languages
Japanese (ja)
Other versions
JP2001237456A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000048880A priority Critical patent/JP2001237456A/ja
Priority claimed from JP2000048880A external-priority patent/JP2001237456A/ja
Publication of JP2001237456A publication Critical patent/JP2001237456A/ja
Publication of JP2001237456A5 publication Critical patent/JP2001237456A5/ja
Pending legal-status Critical Current

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JP2000048880A 2000-02-21 2000-02-21 発光素子 Pending JP2001237456A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000048880A JP2001237456A (ja) 2000-02-21 2000-02-21 発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000048880A JP2001237456A (ja) 2000-02-21 2000-02-21 発光素子

Publications (2)

Publication Number Publication Date
JP2001237456A JP2001237456A (ja) 2001-08-31
JP2001237456A5 true JP2001237456A5 (cg-RX-API-DMAC7.html) 2007-04-12

Family

ID=18570904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000048880A Pending JP2001237456A (ja) 2000-02-21 2000-02-21 発光素子

Country Status (1)

Country Link
JP (1) JP2001237456A (cg-RX-API-DMAC7.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030083821A (ko) * 2002-04-22 2003-11-01 엘지전자 주식회사 질화물 반도체 발광 소자의 제조 방법
JP4645225B2 (ja) * 2005-02-24 2011-03-09 豊田合成株式会社 半導体素子の製造方法
JP4945977B2 (ja) * 2005-09-13 2012-06-06 ソニー株式会社 ＧａＮ系半導体発光素子、発光装置、画像表示装置、面状光源装置、及び、液晶表示装置組立体
JP2007080996A (ja) 2005-09-13 2007-03-29 Sony Corp ＧａＮ系半導体発光素子及びその製造方法
KR100716647B1 (ko) 2006-03-21 2007-05-09 서울옵토디바이스주식회사 전류분산을 위한 에너지 장벽층을 갖는 발광 다이오드
JP2007324546A (ja) * 2006-06-05 2007-12-13 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子の製造方法、及び窒化ガリウム系化合物半導体発光素子、並びにランプ
JP5332451B2 (ja) 2008-09-25 2013-11-06 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法
DE102011112706B4 (de) * 2011-09-07 2021-09-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement
JP5925708B2 (ja) * 2013-02-01 2016-05-25 株式会社東芝 窒化物半導体素子及びウェーハ
JP6371980B2 (ja) * 2013-05-29 2018-08-15 パナソニックＩｐマネジメント株式会社 半導体発光素子

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