JP2001237351A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device which is superior in mechanical strength and can protect an IC chip when a shock is given. SOLUTION: A semiconductor device has an IC chip on which a circuit transferring data with an outer part without a contact is loaded, a supporting body on which the IC chip is loaded, a shock absorbing layer coating the surface side of the IC chip on a side which is not supported by the supporting body, and an overcoat layer covering the shock absorbing layer.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly, to a semiconductor device having extremely high mechanical strength, capable of protecting an IC chip or a connection between the IC chip and external components when subjected to an impact, and providing a reliable device. The present invention relates to a structure of a semiconductor device which transmits and receives data in a highly contactless manner.

[0002]

2. Description of the Related Art In recent years, attention has been paid to IC chips capable of reading data without contact. Such a non-contact type IC chip is connected to an antenna or the like and has a circuit for exchanging data with the outside in a non-contact manner. By embedding it in a recording medium such as an optical disk, a new application possibility is expected. ing. For example, Japanese Patent Application Laid-Open No. 8-161790 discloses a technology in which an electronic circuit including an information recording memory is mounted in an unrecorded portion inside an optical recording portion of an optical disc and data is transmitted and received in a non-contact manner. Have been. In this, an antenna coil is embedded for receiving radio waves and generating an operation power supply, and operates by obtaining electric power thereby to function as a secondary information storage unit in the optical disk device. In addition, bargain sale 6-309
Japanese Patent Publication No. 840 discloses a technique for recording and reproducing data by forming digital data storage means on a part of a read-only optical disk.

[0003]

A semiconductor device equipped with a non-contact type IC chip has been developed in the direction of miniaturization and thinning. For that purpose, it is necessary to keep high mechanical strength. is there. However, in the above-described conventional technology, the mechanical strength of the non-contact type IC chip, particularly, the protection of the integrated circuit or the connection between the integrated circuit and external components when subjected to an external shock, maintains high reliability. There is no description of the technology for this. Such issues are not addressed by them. However, when a non-contact IC chip is mounted on a member such as a disk, the non-contact IC chip receives an impact force or a point pressure from the outside when it comes into contact with the surrounding outside. Increases the probability of being destroyed or damaged. In a non-contact type IC chip, the chip is connected to an antenna and communicates with the outside. However, if an external impact or distortion is applied, poor connection or disconnection to the antenna or an external capacitor for power storage may occur. There is an easy problem. Furthermore, in the case of recording media such as optical discs, when a disc is loaded or unloaded from a deck, a partial impact is likely to be applied, and the risk of distortion being applied to a non-contact type IC chip is high. Easy to do. An object of the present invention is to provide a highly reliable semiconductor device which is extremely excellent in mechanical strength, can protect an IC chip or a connection between the IC chip and an external component when subjected to an impact, and has high reliability.

[0004]

A feature of the present invention to achieve the above object is to provide an IC chip in which a circuit for transmitting and receiving data to and from the outside without contact is integrated, It has a support to be mounted, a shock absorbing layer that covers the surface side of the IC chip that is not supported by the support, and an overcoat layer that covers the shock absorbing layer. In particular, when the IC chip and an external component to which the IC chip is connected are integrated as an IC module and the Young's modulus of the non-contact IC module is E0,
When the Young's modulus of the impact-absorbing layer is E1 and the Young's modulus of the overcoat layer is E2, by satisfying the relationship of E1 <E0 and <E1 <E2, either the point pressure strength or the impact strength can be improved. It is possible to realize a semiconductor device which is excellent in the above. Furthermore, assuming that the thickness of the non-contact type IC module is d0 and the thickness of the shock absorbing layer is d1, the thickness of each component is set so that the relationship of d0 <d1 is satisfied to improve the point pressure strength and the impact strength. It is possible to do. Furthermore, the thickness d0 of the non-contact type IC module is d0 ≦
By reducing the thickness of the non-contact module to 0.5 mm, the thickness of the entire semiconductor device can be reduced,
It will be very favorable. Further, under such conditions, if the thickness d1 of the shock absorbing layer is set to d1 ≧ 0.3 mm, the shock absorbing layer becomes thicker, so that the impact strength can be improved and a preferable structure can be obtained. If the total thickness of the semiconductor device is 1 mm or less, it becomes easy to use the semiconductor device of the present invention in various application systems,
It is also preferable when mounting on a rotating disk.
Such a thin semiconductor device is particularly advantageous to be manufactured by roll supply, and is also desirable from the viewpoint of printing characteristics.

[0005]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A non-contact type IC chip can be protected by satisfying the double conditions of E1 <E0 and <E1 <E2. The size of the non-contact type IC chip itself is usually several millimeters square, and is at most about 5 mm. Therefore, the impact force and the point pressure directly applied to the non-contact type IC chip itself do not become so large. . As a result, even if an external component such as an antenna or a capacitor for power storage is separately connected to the IC chip, and even if the IC chip is connected to the IC chip, disconnection or poor connection hardly occurs. Thus, a highly reliable semiconductor device can be realized. In particular, when the non-contact type IC chip 5 is mounted on a member such as a disc, the non-contact type IC chip 5 is subjected to an impact force or a point pressure from the outside when it comes into contact with the surrounding outside, so that the non-contact type IC chip is broken. However, even if only a thin shock absorbing layer as described above is provided, the protection can be achieved.
Furthermore, in the case of a recording medium such as an optical disk, a shock is easily applied to a part when the medium is loaded or unloaded from the deck, and there is a high risk that distortion due to the impact is applied to the non-contact type IC chip. Sufficient protection is possible in view of the size of the IC chip mounted together with the antenna.

[0006]

Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a configuration diagram of a semiconductor device according to an embodiment of the present invention as viewed from a cross section. As shown in FIG. 1, in the semiconductor device 9 of the embodiment, a shock absorbing layer 3 having a shock absorbing structure is provided above a non-contact type IC module 2 mounted on a support 1, 3 is covered with an overcoat layer 4. This non-contact type IC
As shown in FIG. 3, the module 2 is a non-contact type IC capable of reading out data and transmitting / receiving data in a non-contact manner.
It comprises a chip 5, bumps 6, coils 7, and a substrate 8. This is formed by connecting a coil 7 formed on a substrate 8 by silver paste printing or metal foil etching and a non-contact IC chip 5 to the coil 7 via a bump 6 in a face-down manner. . In this case, instead of the face-down method, for example, a non-contact type IC is
The chip 5 and the coil 7 may be connected.

As a manufacturing method, a non-contact type IC module 2 is mounted on a support 1 such as a film or a plastic card having a thickness of about 0.1 mm to 0.2 mm, and about 0.3 mm to 0.5 mm. Is coated by thermocompression bonding. Thereafter, an overcoat layer 4 having a thickness of about 0.1 mm to 0.2 mm is thermally applied. The impact absorbing layer 3 and the overcoat layer 4 can be adhered by any of various other coating methods such as coating or vapor deposition. Shock absorbing layer 3
It is preferable to use a polyolefin resin as the material and polyethylene terephthalate as the overcoat layer 4.

In the present invention, when the Young's modulus of the non-contact type IC module 2 is E0 and the Young's modulus of the shock absorbing layer 3 is E1 and the Young's modulus of the overcoat layer 4 is E2, E1 <E0 and <E1 <E2 ... Each layer is selected so as to satisfy the relationship of (1). Thereby, the semiconductor device 9 excellent in both the point pressure strength and the impact strength can be realized. As shown in the above equation (1), as for the point pressure strength, the Young's modulus E of the shock absorbing layer 3 is
This is because by increasing the Young's modulus E2 of the overcoat layer 4, the strength against external point pressure can be increased, and the condition for this is E1 <E2.
It is. On the other hand, with respect to the impact strength, by making the Young's modulus E1 of the shock absorbing layer 3 smaller than the Young's modulus E0 of the non-contact type IC module 2, the shock absorbing layer does not elastically deform when an external impact is applied. By doing so, it becomes possible to absorb impact energy. The condition for satisfying this is E1 <E0.

By satisfying such a double condition, it is possible to protect the IC chip provided inside the non-contact type IC module 2 or the connection between the IC chip and external components. In particular, when the non-contact type IC chip 5 is mounted on a member such as a disc, the non-contact type IC chip 5 is subjected to an impact force or a point pressure from the outside when it comes into contact with the surrounding outside, so that the non-contact type IC chip is broken. However, even if only a thin shock absorbing layer as described above is provided, the size of the non-contact type IC chip 5 itself is usually several mm square, Since it is only about 5 mm, it is easily protected. In addition, non-contact type IC
The size of the module 2 is about 5 mm × 10 mm to 10 mm × 20 mm. There is a separate electrical or electronic component connected to the IC chip, such as an antenna or a capacitor for power storage. Even if the IC chip is connected to the IC chip, disconnection or poor connection hardly occurs and reliability is low. A high semiconductor device can be realized.

Further, in the case of a recording medium such as an optical disk, when a recording medium is loaded or unloaded from a deck, a partial impact is likely to be applied to the recording medium, and there is a high risk that distortion due to the impact is applied to a non-contact type IC chip. Even in such a case, a highly reliable semiconductor device can be provided. The non-contact type IC chip 5 may be provided at a position eccentric from the center with respect to the substrate 8 as shown in FIG. This makes it difficult to receive large bending and distortion forces.

Now, regarding the non-contact type IC module 2, it is necessary to keep the mechanical strength of the connection between the non-contact type IC chip 5 and the coil 7 via the bump 6 high in order to prevent disconnection and connection failure. is there. For that purpose, it is preferable that the non-contact type IC module 2 is not easily deformed by an external force from the periphery and the outside. Therefore, as shown in the above equation (1), the Young's modulus E0 of the non-contact type IC module 2 is set to be large, but the specific numerical value of each Young's modulus is the structure shown in FIG. A non-contact type IC module 2 with E0 = 100 GPa was coated with an impact absorbing layer with Young's modulus E1 = 60 MPa, and a semiconductor device was coated with an overcoat layer with Young's modulus E2 = 50 GPa. A semiconductor device having excellent strength was manufactured.

As described above, in this embodiment, polyolefin resin is used as the material of the shock absorbing layer 3 and polyethylene terephthalate is used as the overcoat layer 4, but E1 <E0 and E1 <E2 are satisfied. Another material that satisfies the conditions may be used. For example, as a material of the shock absorbing layer 3, a polyester resin, another polyolefin resin,
It is possible to use a polyurethane type or the like. Further, as the overcoat layer 4, a polycarbonate resin,
It is possible to use a polyimide resin, an epoxy resin, an ABS resin, a polyvinyl chloride resin, a polyester resin, a polyolefin resin, a polyurethane resin, or the like.

In the above case, the thickness d0 of the non-contact type IC module 2 is 150 μm, and the thickness d1 of the shock absorbing layer 3 is 4 μm.
It was 50 μm. The total thickness of the semiconductor device after covering the overcoat layer 4 was 700 μm. As described above, the thickness of each component is selected so that the thickness d0 of the non-contact type IC module 2 and the thickness d1 of the shock absorbing layer 3 satisfy the relationship of d0 <d1, thereby improving the point pressure strength and the impact strength. I was able to do it. In particular, since the thickness d0 of the noncontact IC module 2 is set to d0 ≦ 0.5 mm, the thickness of the noncontact IC module 2 can be reduced. Thereby, the thickness of the entire semiconductor device can be reduced, and the thickness d of the shock absorbing layer 3 can be further reduced.
If 1 is d1 ≧ 0.3 mm, the shock absorbing layer 3 can be made thicker by that amount,
Particularly, the impact strength can be improved. Moreover, since the total thickness of the semiconductor device is 1 mm or less, the semiconductor device of the present invention can be used in various application systems. Therefore, the thickness of the support 1 is about 0.1 mm to 0.2 mm, which is a thickness of a film or a plastic card. And this support 1
A member of the same quality is preferable because it is welded to a mounting target and mounted.
In particular, a material that can be thermocompression-bonded to an optical disk, its case, or other components is preferable. It is to be noted that such a thin semiconductor device is particularly advantageous to be manufactured by roll supply, and is desirable in terms of printing characteristics.

In the embodiment shown in FIG. 1, since the non-contact type IC module 2 is mounted on the support 1, the IC module 2 is somewhat protected from impact force and point pressure from the support 1 side. Thus, a semiconductor device having high reliability in terms of mechanical strength against external force from the side opposite to the support 1 could be provided. Next, another embodiment of the present invention will be described. FIG. 2 is a sectional view showing the configuration of a semiconductor device according to another embodiment. As shown in FIG. 2, both sides of the non-contact type IC module 2 are covered with a shock absorbing layer 3 having a shock absorbing structure.
Is covered with an overcoat layer 4. With such a structure, it is possible to provide a semiconductor device having high mechanical strength and high reliability against external force from either side of the non-contact type IC module 2. Note that FIG.
In the embodiment, after the non-contact type IC module 2 is covered with the shock absorbing layer 3 and the overcoat layer 4, the whole non-contact type IC module 2 covered with the support 1 is mounted.

FIG. 4 is an explanatory diagram of an optical disk on which the non-contact type IC module 2 is mounted. FIG. 4A shows that a semiconductor device 9 having a non-contact IC module 2 is directly heat-welded inside an optical disk (CD) 10, and a support 1 is made of a member made of the same material as the optical disk 10. . Reference numeral 11 denotes a counterweight, which is an optical disk 1
A weight provided with the same size and mass as the non-contact type IC module 2 is disposed at a position symmetrical with respect to the rotation center O of the optical disc 10 so as to prevent occurrence of misalignment or eccentricity when 0 rotates. is there. FIG. 4B shows a semiconductor device 9 having a non-contact type IC module 2 attached to a case 13 of an optical disk storage medium (MO) 12 with an adhesive or the like.
It is. In any case, the reader-side head having the transmission / reception antenna is disposed at a position facing the semiconductor device 9 having the non-contact type IC module 2.

As described above, in the embodiment, the semiconductor device 9 having the non-contact type IC module 2 is mounted on an object to be mounted via the support 1 by welding or the like. It goes without saying that the support 1 of the example may be used as a member to be mounted as it is. In this case, the support 1 itself is the mounting target member.

[0017]

According to the present invention, in a semiconductor device having a non-contact type IC chip mounted thereon, a shock absorbing layer having a shock absorbing structure is provided above a non-contact type IC module mounted on a support. Since the absorbing layer is covered with the overcoat layer having excellent point pressure strength, a semiconductor device having both excellent point pressure strength and impact strength can be realized.
As a result, even if there is a separate component such as an antenna or a capacitor for power storage with respect to the IC chip, the IC chip and its connection are protected, and disconnection and connection failure are unlikely to occur. A highly reliable semiconductor device can be realized.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing a configuration of a semi-thin body device according to an embodiment of the present invention.

FIG. 2 is a sectional view showing the structure of a semi-thin body according to another embodiment of the present invention.

FIG. 3 is a configuration diagram showing a configuration of a non-contact / separation IC module mounted on a semiconductor device according to an embodiment of the present invention;

FIG. 4 is an explanatory diagram of an optical disc on which the non-contact type IC module 2 is mounted.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Support, 2 ... Non-contact type IC module, 3 ... Shock absorption layer, 4 ... Overcoat layer, 5 ... Non-contact type IC chip, 6 ... Bump, 7 ... Coil, 8 ... Substrate, 10 ... Optical disk, 11 ... Counterweight, 12 ... Case, 20
... Transceiver head on the reader side.

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H05K 3/28 H01L 23/30 BF Term (Reference) 4M109 AA02 BA03 ED01 EE02 GA02 GA10 5B035 AA07 BA05 BB09 CA02 5E314 AA32 AA34 AA36 AA37 BB03 FF01 FF14 FF21 FF23 FF27 GG12 GG19

Claims (7)

[Claims] An IC chip in which a circuit for exchanging data with the outside in a non-contact manner is integrated, a support on which the IC chip is mounted, and the IC chip on a side not supported by the support A semiconductor device comprising: a shock-absorbing layer that covers the front side of the device; and an overcoat layer that covers the shock-absorbing layer. 2. The IC module according to claim 1, wherein the IC chip is connected to an electric component or an electronic component and is mounted together with the electric component or the electronic component to form an IC module. And the Young's modulus of the IC module is E0,
2. The method according to claim 1, wherein when the Young's modulus of the shock absorbing layer is E1 and the Young's modulus of the overcoat layer is E2, the relations of E1 <E0 and <E1 <E2 are satisfied. Semiconductor device. 3. The IC chip is connected to an electric component or an electronic component and mounted together with the electric component or the electronic component to form an IC module, wherein the shock absorbing layer is provided on a surface side of the IC module. 2. The semiconductor device according to claim 1, wherein the relationship of d0 <d1 is satisfied when the thickness is d0 and the thickness of the shock absorbing layer is d1. 4. The semiconductor device according to claim 3, wherein the electric component or the electronic component is an antenna, and the thickness d0 of the non-contact type IC module is in a relationship of d0 ≦ 0.5 mm. 5. The semi-thin body device according to claim 3, wherein a thickness d1 of the shock absorbing layer is in a relationship of d1 ≧ 0.3 mm. 6. The semiconductor device according to claim 1, wherein the entire thickness of said semiconductor device is 1 mm or less. 7. The IC chip or the IC module is entirely covered with the shock absorbing layer and the overcoat layer, and the support is a member on which the IC chip or the IC module is mounted. 3. The semiconductor device according to 1 or 2.