JP2001228298A - Radiation solid sensor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the quality of picture signals by enhancing the adhesion of phosphors and a sensor part and protecting both of them in a radiation solid sensor. SOLUTION: The phosphors carrying optical conversion are integrated with the sensor part by being applied to it directly or through an isolation layer and/or an electromagnetic shield layer. The thickness of the applied phosphors is set at 100 μm or less so as not to degrade the sharpness of images, and anisotropic phosphors are placed on the applied phosphors.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention converts radiation containing image information of a subject, obtained by irradiating the subject with radiation such as X-rays, into visible light, records it as a charge latent image, and reads the latent image with a reading device. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a readable radiation solid-state sensor, in which a phosphor that converts radiation into visible light is applied to a sensor unit.

[0002]

2. Description of the Related Art Conventionally, solid-state radiation sensors have been widely used. For example, in medical radiation imaging, the radiation transmitted through the subject is irradiated on the radiation solid-state sensor, and a charge corresponding to the dose of the irradiated radiation is accumulated as a latent image charge in a power storage unit in the radiation solid-state sensor. While recording radiation image information as a charge latent image,
2. Description of the Related Art A solid-state radiation sensor that reads an image signal corresponding to a charge latent image from a power storage unit by an image reading unit is known. Various types of radiation solid-state sensors have been proposed.

For example, in terms of a charge reading process for obtaining an image signal corresponding to the amount of latent image charges stored in the power storage unit, there are a TFT reading method and a direct reading method.

Here, the TFT readout system scans and drives a TFT (thin film transistor) to convert the latent image charge stored in the power storage unit into a radiation image signal and outputs the radiation image signal. The electromagnetic wave for use (in general, visible light is used) is applied to convert the latent image charge stored in the power storage unit into an image signal and output the image signal (for example, Japanese Patent Application Laid-Open No. 7-72256 by the present applicant, Japanese Patent Application No. Hei 10-243379).

On the other hand, in terms of a charge generation process for generating a latent image charge carrying image information in a radiation solid-state sensor, one of a light conversion system, a direct conversion system, and a direct conversion system is used. There is an improved direct conversion system that reads a latent image charge by scanning a reading light.

Here, the radiation conversion solid-state sensor of the direct conversion system and the improved direct system is one in which radiation is irradiated to the photoconductive layer to directly generate electric charge (for example, Japanese Patent Application Laid-Open No. 1-216290, the present application). Japanese Patent Application No. Hei 10-232 by the applicant
No. 824 and No. 10-271374). In some cases, a solid-state radiation sensor using an anisotropic phosphor has been proposed in order to prevent blurring and prevent the sharpness of an image from being deteriorated (Japanese Patent Application No. 11-242874 filed by the present applicant).

[0007] The radiation solid-state sensor of the light conversion system is such that radiation transmitted through a subject is once converted into visible light by a light conversion unit made of a phosphor, and then charges are generated by the visible light. is there.

In a direct conversion type solid-state radiation sensor, radiation such as X-rays is once converted into visible light, and then the converted visible light is applied to a recording photoconductive layer to form a charge latent image. If it is possible to record, it is possible to increase the generation efficiency of electric charges generated in the recording photoconductive layer by visible light, and thus, it is possible to reduce the radiation dose, and thus, it is possible to suppress the exposure of the subject to a low level, In some cases, the solid-state radiation sensor of the direct conversion type is also provided with a light conversion unit composed of a phosphor layer to convert radiation into visible light before irradiating the photoconductive layer (for example, by the applicant of the present application). Japanese Patent Application Nos. Hei 10-232824 and No. 11-87923).

[0009]

However, conventionally, in the radiation solid-state sensor of the light conversion type and the solid-state radiation sensor of the direct conversion type provided with the light conversion unit, the phosphor is applied to the sensor unit by applying pressure. It is usually fixed. In this case, since the phosphor is directly placed on the sensor unit, the sensor unit may be destroyed at the time of installation, and when the phosphor moves due to vibration or the like, the phosphor itself may be damaged and destroyed. . As a result, the quality of the image signal may be degraded and the solid-state radiation sensor may be completely unusable.

The present invention has been made in view of the above circumstances, and has as its object to provide a solid-state radiation sensor that protects the solid-state radiation sensor and enables reading of a high-quality image signal.

[0011]

According to the present invention, there is provided a solid-state radiation sensor, comprising: a light conversion unit comprising a phosphor layer for converting irradiated radiation into visible light in an amount corresponding to a dose of the radiation; A solid-state sensor comprising: a sensor unit that accumulates charges formed by visible light from the sensor unit, records radiation image information as a charge latent image, and reads the charge latent image with an image information reading device. The layer is made of a phosphor applied to the sensor unit.

Here, "applying" means applying the phosphor to the sensor portion of the radiation solid-state sensor, and not only applying the phosphor directly to the sensor portion but also applying an insulating layer and / or an electromagnetic wave. It also includes application via a shield layer.

The "light conversion portion" means a portion that converts radiation into visible light, and mainly includes a phosphor layer, but may include an insulating layer and / or an electromagnetic shield layer.

In the radiation solid state sensor according to the present invention, the phosphor is applied to the sensor unit via an insulating layer in order to prevent the charge charged in the light conversion unit from being injected into the sensor unit. It is preferred that In this case, in order to prevent blur, the insulating layer is preferably a light transmitting substance and has a thickness of 100 μm or less.

In the solid-state radiation sensor according to the present invention, since the fluorescent substance may be charged with static electricity for some reason, an electromagnetic shield layer is provided on the fluorescent substance side of the sensor section so that the static electricity can be released. Preferably, it is In this case, the electromagnetic shield layer is preferably made of a material that transmits light.

It is preferable that the lowermost layer of the phosphor on the sensor section side is an adhesive binder.

In the radiation solid-state sensor according to the present invention, the thickness of the phosphor layer may be 100 μm or less, and a separate phosphor layer may be provided on the phosphor layer.
In this case, the separate phosphor layer is preferably an anisotropic phosphor layer.

Here, the "anisotropic phosphor layer" has a structure in which a phosphor-filled region is subdivided into a number of micro-cells by a fluorescent reflective partition member extending in the thickness direction of the layer. .

There is a "structure in which the phosphor-filled region is subdivided into a large number of micro-cells by the partition member". One-dimensional arrangement in which a large number of partition members and the phosphor-filled region are arranged in a stripe pattern. Or a two-dimensional arrangement in which the partition members are arranged in a checkered pattern. In the latter case, the planar shape of the phosphor-filled region may be any shape, for example, a square shape or a circular shape.

[0020]

According to the radiation solid-state sensor of the present invention, since the phosphor is applied to the sensor portion and made integrally with the sensor portion, the sensor portion is destroyed when the phosphor is installed, and the vibration is reduced. Therefore, it is possible to prevent the phosphor itself from being damaged, thereby protecting the solid-state radiation sensor and obtaining a high-quality image signal.

Further, since the light conversion section is provided with the insulating layer and the electromagnetic shield layer, the conductivity of the light conversion section and the influence of electrostatic discharge can be prevented.

Further, in the radiation solid-state sensor according to the present invention, the thickness of the phosphor layer may be 100 μm or less, and a separate phosphor layer may be provided on the phosphor layer. If an anisotropic phosphor layer is used for the phosphor layer, the solid-state radiation sensor can be protected and blurred light can be prevented, and a clear image can be obtained.

[0023]

Embodiments of the present invention will be described below with reference to the drawings.

The solid-state radiation sensor according to the present invention has a structure in which a phosphor is applied to the sensor portion and is integrally formed with the sensor portion. You can make solid state sensors. FIG. 1 shows an embodiment of the present invention.
FIG. 1 is a cross-sectional view of a phosphor-coated radiation solid-state sensor applied to the radiation solid-state sensor of No. 824.

As shown in FIG. 1, the radiation solid-state sensor A of the present embodiment according to the embodiment of the present invention includes a light conversion section 1 and a sensor section 2 and records radiation (hereinafter referred to as “recording”) such as X-rays described later. The phosphor layer 3, which converts L1 into visible light L3 described below, an adhesive binder 4, an insulating layer 5 for preventing conductivity, an electromagnetic shield layer for preventing static electricity, and a transmittance for visible light L3. A first conductive layer 7 having the following characteristics; a recording photoconductive layer 8 which exhibits conductivity when irradiated with visible light L3 transmitted through the conductive layer 7; and a charge (latent image) charged on the conductive layer 7. A charge that acts as a substantially insulator against a polar charge; for example, a negative charge, and acts substantially as a conductor against a charge of the opposite polarity to the charge (transport polarity charge; a positive charge in the above example). The transport layer 9, an electromagnetic wave for reading described below (hereinafter referred to as “reading light”). 2) A reading photoconductive layer 10 exhibiting conductivity when irradiated with L2 and a second conductor layer 11 having transparency with respect to the reading light L2 are laminated in this order.

The phosphor layer 3 is made of a phosphor for converting the recording light L1 into visible light L3, and is preferably made of, for example, cesium iodide (CsI).

The insulating layer 5 has no conductivity and has a transmittance to the visible light L3, needs to have a thickness of 100 μm or less, and is preferably made of SiO ₂ or the like.

The electromagnetic shield layer 6 is for releasing static electricity, and needs to be transparent to visible light L3, and is preferably made of ITO or the like.

The first conductor layer 7 has a property of transmitting visible light L3. For example, a layer obtained by uniformly applying a conductive substance on a transparent glass plate (such as a Nesa film) is suitable. It is.

The recording photoconductive layer 8 are those which takes on conductivity by receiving irradiation of visible light L3, for example, amorphous selenium (a-Se), PbO, lead oxide such as PbI ₂ (II) or iodine Lead (II) oxide, Bi ₁₂ (G
_{e, Si) O 20, Bi} 2 it 3 / photoconductive material containing as a main component at least one of such an organic polymer nanocomposite is appropriate.

The charge transport layer 9 is better when the difference between the mobility of the negative charge charged on the conductive layer 7 and the mobility of the positive charge having the opposite polarity is larger. (PVK, TPD, discotic liquid crystal, etc.) are preferable because they have light insensitivity. Here, “having light insensitivity” means that the material hardly exhibits conductivity even when irradiated with the recording light L1, the visible light L3, or the reading light L2.

The reading photoconductive layer 10 exhibits conductivity when irradiated with the reading light L2.
-Se, Se-Te, Se-As-Te, metal-free phthalocyanine, metal phthalocyanine, MgPc (Magnesium
phtalocyanine), VoPC (PhaseII of vanadyl)
phtalocyanine), CuPc (Cupper phtalo)
A photoconductive substance containing at least one of cyanine and the like as a main component is suitable. FIG. 2 is a schematic configuration diagram of a recording / reading system using the solid-state radiation sensor A (integrating a charge latent image recording device and a charge latent image reading device). This reading system includes a radiation irradiation unit 1
2, radiation solid state sensor A, power supply 15, current detection means 1
6. It consists of the reading exposure means 14 and the connection means S1 and S2.

The first conductor layer 7 of the solid-state radiation sensor A is connected to the negative electrode of the power supply 15 via the connecting means S1, and is also connected to one end of the connecting means S2. One of the other ends of the connection means S2 is connected to the current detection means 16, and the other of the second conductor layer 11 of the solid-state radiation sensor A, the positive electrode of the power supply 15, and the other end of the connection means S2 are grounded. The current detection means 16 is a detection amplifier 16a composed of an operational amplifier.
And a feedback resistor 16b to form a so-called current-voltage exchange circuit.

A subject 13 is disposed on the upper surface of the phosphor layer 3. The subject 13 has a portion 13 a having transparency to the recording light L 1 and a blocking portion (light blocking portion) 1 having no transparency.
3b is present. The radiation irradiating means 12 uniformly blasts the recording light L1 onto the subject 13, and the reading exposure means 14 scans and exposes the reading light L2 such as an infrared laser light in the direction of the arrow in FIG. It is desirable that the reading light L2 has a beam shape converged to a small diameter.

The recording light L 1 passes through the transmitting part 13 a of the subject 13 and enters the light converting part 1. The phosphor layer 3 of the light conversion unit 1 converts the recording light L1 into visible light (for example, blue light) L3, and preferably has high conversion efficiency (for example, cesium iodide (CsI) Conversion rate is high). The visible light L3 is applied to the adhesive binder 4, the insulating layer 5,
The light passes through the electromagnetic shield layer 6 and the first conductor layer 7 and irradiates the recording photoconductive layer 8. Although the photoconductive layer 8 using a conductive substance (for example, amorphous selenium) exhibits conductivity with respect to the recording light L1, it has extremely high conductivity with respect to visible light (for example, blue light) L3. It shows. Therefore, in the case of the radiation solid-state sensor A, the positive and negative charge pairs can be generated very efficiently in the photoconductive layer 8 by the converted visible light (for example, blue light) L3 instead of the recording light L1 directly. Also,
When cesium iodide (CsI) is used as described above,
Since the conversion rate for converting the recording light L1 into the blue visible light L3 is high, even if the irradiation amount of the recording light L1 is reduced, it is possible to accumulate a sufficiently large amount of electric charges, and thus, the exposure dose to the subject Can be kept low.

As the phosphor layer 3, one that converts the recording light L1 into visible light (for example, red light) in another wavelength region is used (for example, Y ₂ O ₃ : Eu, YV).
O ₄ : a scintillator in which a red light emitting phosphor such as Eu and a blue light emitting phosphor such as CsI are mixed), and the reading photoconductive layer 10 exhibits photoconductivity even with the red light (for example, (Metal-free phthalocyanine, metal phthalocyanine, etc.), the photoconductive layer 8 using amorphous selenium does not exhibit photoconductivity with respect to red light and transmits through the photoconductive layer 8 and the charge transport layer 9; Some of the light irradiates the photoconductor 10, and the red light causes the photoconductive layer 10 to exhibit conductivity. For this reason, even when the recording light L1 is irradiated in a large amount, it is possible to prevent the accumulated charge amount from excessively increasing.

As described above, the photoconductive layer 8 penetrates the transmitting portion 13a of the subject 13 and is converted by the phosphor layer 3, and the adhesive binder 4, the insulating layer 5, the electromagnetic shield layer 6, and the first conductive layer 7 receives the visible light L3, and becomes conductive. As a result, a negative charge (−) and a positive charge (+) are generated in the photoconductive layer 8. In FIG. 2, these charges are represented by enclosing-or +.

The positive charges generated in the photoconductive layer 8 move at a high speed in the photoconductive layer 8 toward the conductive layer 7, and are charged on the conductive layer 7 at the interface between the conductive layer 7 and the photoconductive layer 8. The recombination and recombination of the negative electric charge and the electric charge disappear (see FIGS. 3 and 4). On the other hand, the negative charges generated in the photoconductive layer 8 move toward the charge transport layer 9 in the photoconductive layer 8. The charge transport layer 9 has the same polarity as the charge charged on the conductor layer 7 (negative charge in this example).
Act as an insulator, the negative charges moving in the photoconductive layer 8 stop at the interface between the photoconductive layer 8 and the charge transport layer 9 and are accumulated at this interface. (See FIGS. 3 and 4). The amount of charge stored is determined by the photoconductive layer 8.
The amount of negative charges generated in the recording light L1,
Is determined by the amount of light that has passed through.

On the other hand, the recording light L1 is
Since the light does not pass through 3b, the lower portion of the solid-state radiation sensor does not change at all.

By bombarding the subject 13 with the recording light in this manner, charges corresponding to the subject image are transferred to the photoconductive layer 8.
And the charge transport layer 9 can be accumulated at the interface. The subject image due to the accumulated charges is called a charge latent image.
This charge latent image is read by a reading device. In the solid-state radiation sensor A of the present embodiment, the charge latent image reading device portion includes the radiation solid-state sensor main body A, the reading exposure means 14, the current detection means 16, and the connection means S2, but detailed description thereof will be omitted here. .

The radiation-coated solid-state sensor according to the present invention is not limited to the above-described example. If a phosphor is applied to the sensor portion, various solid-state radiation-treated solid-state sensors can be used. It can be applied to

For example, the above-mentioned phosphor-coated radiation solid-state sensor A is made of a material that exhibits conductivity when the reading photoconductive layer 10 is irradiated with the reading light L2, as shown in FIG. Phosphor-coated solid-state radiation sensor B
, The basic structure is the same as sensor A,
The reading photoconductive layer 10 is made of a material that exhibits conductivity even when irradiated with the converted recording light L3.
a may be configured.

Although the basic structure is the same as that of the sensor A, as in the case of the phosphor-coated radiation solid state sensor C shown in FIG. The recording light L1, which is not directly generated by the irradiation of the visible light L3 converted from the recording light L1, and becomes a noise component) is injected into the photoconductive layer 8; In order to prevent the charge (positive charge in this example, which is a noise component) charged on the layer 11 from being injected into the photoconductive layer 10, the conductive layer 7 and the photoconductive layer 8 are used.
And / or between the conductor layer 11 and the photoconductive layer 10 may be provided with charge blocking layers 17a and 17b, respectively.

FIGS. 7, 8 and 9 are views showing a phosphor-coated radiation solid-state sensor in which the embodiment according to the present invention is applied to the radiation solid-state sensor of Japanese Patent Application No. 11-87923, and FIG. 7 is a perspective view. 8, FIG. 8 is an XY sectional view of the arrow P part, and FIG. 9 is an XZ sectional view of the arrow Q part.

As shown in FIGS. 7, 8, and 9, the phosphor-coated radiation solid-state sensor D of this embodiment according to the embodiment of the present invention includes a phosphor layer 3, an adhesive binder 4, an insulating layer 5,
A first electrode layer 18 on which a first conversion electrode 19 formed by arranging a light conversion portion composed of the electromagnetic shield layer 6, a large number of flat elements (linear electrodes) 19 a in a stripe shape, and a phosphor layer 3; The recording photoconductive layer 20 which exhibits conductivity by receiving the visible light converted by the above, the pre-exposure photoconductor layer 21 which exhibits conductivity by being irradiated with the pre-exposure light, and a large number of plate-like elements 23a And a sensor portion composed of a second electrode layer 22 on which a second stripe electrode 23 formed by arranging in a stripe shape so as to intersect with the first stripe electrode 19 is laminated in this order. is there. A power storage unit 24 for storing a latent image charge is formed between the recording photoconductive layer 20 and the pre-exposure photoconductive layer 21.

Here, the "pre-exposure light" means that the solid-state sensor D is irradiated with the recording radiation before the recording radiation is irradiated, and the electric charge is substantially uniformly accumulated in the power storage unit 24 of the solid-state sensor D. Means an electromagnetic wave having a wavelength and intensity that can be generated, and is not necessarily limited to visible light.

The term "linear electrode" means an electrode having an elongated shape as a whole, and may have a columnar shape, a prismatic shape, or the like as long as it has an elongated shape. However, a plate electrode is particularly preferable.

The radiation L1 transmitted through the transmitting portion 13a of the subject 13 is converted into visible light L3 by the phosphor layer 3, and the adhesive L4, the insulating layer 5, the electromagnetic shield layer 6, the first
The light passes through the electrode layer 18 and is incident on the recording photoconductive layer 20 to generate charges, and the charges are stored in the power storage unit 24. The stored charge latent image is read by the reading device.

The description of the reader unit of the solid-state radiation sensor D of this embodiment is omitted here.
Since neither TFT nor laser scanning system is used, simple recording and reading of image information can be performed. Since the fluorescent material 3 is applied to the sensor portion via the insulating layer 5 and the electromagnetic shield layer 6, The phosphor 3 and the sensor unit can be protected, so that the radiation solid state sensor D itself can be protected, and the quality of the image can be protected.

FIGS. 10, 11 and 12 also show a phosphor-coated radiation solid state sensor in which the embodiment according to the present invention is applied to the radiation solid state sensor disclosed in Japanese Patent Application No. 11-87923.
FIG. 11 is a perspective view, FIG. 11 is an XY cross-sectional view of a P arrow finger portion, and FIG.
2 is an XZ sectional view of the Q arrow finger part.

As shown in FIGS. 10, 11 and 12,
The phosphor-coated radiation solid-state sensor E of this example according to the embodiment of the present invention has a configuration in which the recording photoconductive layer 20 of the radiation solid-state sensor D is replaced with a recording photoconductive layer 28 and the pre-exposure photoconductive layer 21 is replaced with a dielectric. It is replaced with a layer 29. That is, the phosphor-coated radiation solid sensor E includes the phosphor layer 3, the adhesive binder 4, the insulating layer 5, and the electromagnetic shield layer 6.
And a first electrode layer 26 on which a first stripe electrode 27 formed by arranging a large number of plate-like elements (linear electrodes) 27a in a stripe pattern is irradiated with pre-exposure light. , A recording photoconductive layer 28, a dielectric layer 29, and a large number of plate-like elements 31a.
Second stripe electrode 31 in which are arranged in a stripe shape
And a sensor portion including the second electrode layer 30 on which
They are laminated in this order. Recording photoconductive layer 28
A power storage unit 32 for storing a latent image charge is formed between the power storage unit 32 and the dielectric layer 29.

The radiation L1 transmitted through the transmitting portion 13a of the subject 13 is converted into visible light L3 by the phosphor layer 3, and the adhesive L4, the insulating layer 5, the electromagnetic shield layer 6, the first
The light passes through the electrode layer 26, enters the recording photoconductive layer 28, generates charges, and stores the charges in the power storage unit 32. The stored charge latent image is read by the reading device.

The description of the reading unit of the solid-state radiation sensor E of this embodiment is also omitted here, but the solid-state sensor E of this embodiment has the same structure as the solid-state radiation sensor D except that the phosphor 3 has the insulating layer 5,
Since it is applied to the sensor section via the electromagnetic shield layer 6, the phosphor 3 and the sensor section can be protected, so that the radiation solid state sensor E itself can be protected and the quality of the image can be protected.

Although the radiation solid-state sensor described above does not use a TFT in the reading process, the embodiment according to the present invention can be applied to a radiation solid-state sensor using a TFT in the reading process.

FIGS. 13 and 14 are diagrams showing a phosphor solid-state sensor in which the embodiment according to the present invention is applied to the solid-state radiation sensor of JP-A-7-72256, and FIG. FIG. 14 is a diagram showing details of a solid-state light detecting element used in the solid-state radiation sensor F.

The radiation solid state sensor disclosed in JP-A-7-72256 is
The signal was read from the solid-state radiation sensor to remove noise in the image caused by errors in the signal amplifier capacity provided in the solid-state radiation sensor consisting of a large number of solid-state photodetectors and variations in the sensitivity of the solid-state photodetectors. This is for performing gain correction and / or offset correction on an image signal to obtain a high-quality radiation image.

Here, the "gain correction" means that the image signal when uniform radiation is applied is corrected so that the image signal is substantially the same for all the solid-state light detecting elements or element groups. “Correction” means that correction is performed such that the value of the image signal when no radiation is applied to each solid-state light detection element or each element group becomes zero.

The sensor section of the solid-state radiation sensor F according to this embodiment is configured so that a plurality of solid-state light detecting elements 37 are two-dimensionally arranged. As shown in FIG. 14, the solid-state light detecting element 37 has a signal line 41 made of a conductive film patterned on a substrate 40 made of a resin sheet, and mainly includes a photodiode 38 as a light conversion unit and a transfer unit Becomes TFT39.

The radiation L1 transmitted through the transmitting portion 13a of the subject 13 is converted into visible light L3 by the phosphor layer 3, transmitted through the adhesive binder 4, the insulating layer 5, and the electromagnetic shield layer 6, and enters the sensor section. A charge is generated by a photodiode 38 serving as a light conversion unit of the solid-state light detection element 37,
The power is temporarily stored in the TFT 39 serving as a transfer unit. The accumulated latent image charges are transferred to a detection circuit (not shown), subjected to gain correction and / or offset correction processing by the image signal correction device 35, and output to the image reproduction device 36.

FIG. 15 is a schematic sectional view showing a phosphor radiation solid sensor G in which the embodiment according to the present invention is applied to a radiation solid sensor of Japanese Patent Application No. 10-243379 using a TFT.

The radiation solid-state sensor disclosed in Japanese Patent Application Laid-Open No. 7-72256 is a direct-conversion radiation solid-state sensor, in which a phosphor is provided as high-frequency component attenuating means to reduce aliasing noise and obtain a high-quality image. Things.

As shown in FIG. 15, the image reading section 44 of the solid-state radiation sensor G of the present example is configured such that each of them is arranged in a matrix at a predetermined pitch on an insulating substrate made of, for example, quartz glass having a thickness of 3 mm. A plurality of charge collecting electrodes 44a corresponding to the pixels, and capacitors 4 for storing the charges collected by each charge collecting electrode 44a as latent image charges, respectively.
A switching element 44c such as a TFT for transferring the latent image charge stored in the capacitor 4b and the capacitor 44b to a detection circuit (not shown).

A part of the radiation L1 transmitted through the transmitting portion 13a of the subject 13 is converted into visible light L3 by the phosphor layer 3, and the converted visible light L3 and the remaining radiation L1 are converted into the adhesive binder 4 and the insulating layer. 5, pass through the electromagnetic shield layer 6 and the first electrode 42 and enter the radiation conductor 43. As the radiation conductor 43, one that generates an electric charge when irradiated with either visible light or radiation is used.
When the visible light L <b> 3 and the remaining radiation L <b> 1 enter the radiation conductor 43, electric charges corresponding to the image information carried by them are generated in the radiation conductor 43, and are read by the image reading unit 44. As mentioned above, light conversion method, direct conversion method,
Various phosphor-coated radiation solid-state sensors, such as those using a TFT, have been described. However, the present invention is not limited to the above-described embodiment, but any radiation solid-state sensor using a phosphor can be used, as shown in FIG. Similarly to the above, a phosphor-coated radiation solid-state sensor can be realized. The insulating layer 5 and the electromagnetic shield layer 6 may not be required depending on the actual configuration of the solid-state radiation sensor.

In the above description, the phosphor is applied to the sensor portion. However, as shown in FIG.
In order to improve the sharpness of an image, the thickness of the applied phosphor may be 100 μm or less, and an anisotropic phosphor layer may be provided thereon. In this case, it is not necessary to apply the anisotropic phosphor, and it is only necessary to set the phosphor on the applied phosphor.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a phosphor-coated radiation solid state sensor A of a first example in which an embodiment of the present invention is applied to a radiation solid state sensor disclosed in Japanese Patent Application No. 10-23284.

FIG. 2 is a schematic diagram of a recording and reading system using a phosphor-coated radiation solid state sensor A;

FIG. 3 is a diagram showing a process of generating a latent image charge in the phosphor-coated radiation solid-state sensor A;

FIG. 4 is a diagram showing a process of accumulating latent image charges in a phosphor-coated radiation solid-state sensor A;

FIG. 5 is a sectional view of a phosphor-coated radiation solid state sensor B of a second example in which the embodiment of the present invention is applied to the radiation solid state sensor of Japanese Patent Application No. 10-23284.

FIG. 6 is a sectional view of a phosphor-coated radiation solid state sensor C of a third example in which the embodiment of the present invention is applied to the radiation solid state sensor of Japanese Patent Application No. 10-23284.

FIG. 7 is a perspective view of a phosphor-coated radiation solid state sensor D of a first example in which the embodiment of the present invention is applied to the radiation solid state sensor disclosed in Japanese Patent Application No. 11-87923.

FIG. 8 is an XY cross-sectional view of the arrow P of a phosphor-coated radiation solid state sensor D of a first example in which the embodiment of the present invention is applied to the radiation solid state sensor disclosed in Japanese Patent Application No. 11-87923.

FIG. 9 is an XZ cross-sectional view of an arrow finger portion of a phosphor-coated radiation solid state sensor D of a first example in which the embodiment of the present invention is applied to the radiation solid state sensor disclosed in Japanese Patent Application No. 11-87923.

FIG. 10 is a perspective view of a phosphor-coated radiation solid state sensor E of a second example in which the embodiment of the present invention is applied to the radiation solid state sensor of Japanese Patent Application No. 11-87923.

FIG. 11 is an XY cross-sectional view of the arrow P of a phosphor-coated radiation solid state sensor E of a second example in which the embodiment of the present invention is applied to the radiation solid state sensor disclosed in Japanese Patent Application No. 11-87923.

FIG. 12 is an XZ cross-sectional view of a second embodiment of a phosphor-coated radiation solid state sensor E in which the embodiment of the present invention is applied to the radiation solid state sensor disclosed in Japanese Patent Application No. 11-87923.

FIG. 13 is a schematic cross-sectional view showing a phosphor-coated radiation solid-state sensor F in which an embodiment of the present invention is applied to a radiation solid-state sensor disclosed in JP-A-7-72256.

FIG. 14 is a diagram showing details of a solid-state photodetector used for a phosphor-coated radiation solid-state sensor F;

FIG. 15 is a schematic diagram showing a phosphor-coated radiation solid sensor G in which the embodiment of the present invention is applied to the radiation solid sensor of Japanese Patent Application No. 10-243379.

FIG. 16 is a diagram showing an embodiment of the present invention.

FIG. 17 shows an embodiment of providing an anisotropic phosphor on a coated phosphor according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Light conversion part 2 Sensor part 3 Phosphor layer 4 Adhesive binder 5 Insulating layer 6 Electromagnetic shielding layer 7 First conductor layer 8, 20, 28 Photoconductive layer for recording 9 Charge transport layer 10, 10a Photoconductive layer for reading DESCRIPTION OF SYMBOLS 11 2nd conductor layer 12 Radiation irradiation means 13a Subject transmission part 13b Subject light shielding part 14 Reading exposure means 15 DC power supply 16 Current detection means 17a, 17b Blocking layer 18, 26 First electrode layer 19, 27 First stripe electrode Reference Signs List 21 photoconductive layer for pre-exposure light 22, 30 second electrode layer 23, 31 second stripe electrode 24, 32 power storage unit 25, 33 microplate 29 dielectric layer 34 anisotropic phosphor 35 image signal correction device 36 image reproduction Device 37 Solid-state photodetector 38 Photodiode 39, 44c TFT 40 Substrate 41 Signal line 42 First electrode layer 43 Emission Conductive layer 44 image reading unit 44a charge collection electrode 44b capacitor 45 second electrode layer L1 recording radiation L2 reading light L3 visible light S1, S2 connecting means

Claims (8)

[Claims] 1. A light conversion unit comprising a phosphor layer for converting irradiated radiation into visible light in an amount corresponding to a dose of the radiation, and accumulating a charge formed by the visible light from the light conversion unit. A radiation solid-state sensor comprising: a sensor unit that records radiation image information as a charge latent image and reads the charge latent image by an image information reading device; wherein the phosphor layer is made of a phosphor applied to the sensor unit. A solid-state radiation sensor. 2. The radiation solid-state sensor according to claim 1, wherein the phosphor is applied to the sensor section via an insulating layer. 3. The insulating layer transmits light and has a thickness of 100 μm.
3. The solid-state radiation sensor according to claim 2, wherein: 4. The radiation solid-state sensor according to claim 1, wherein an electromagnetic shield layer is provided on an upper portion of the sensor section on the phosphor side. 5. The solid-state radiation sensor according to claim 4, wherein the electromagnetic shield layer transmits light. 6. The radiation solid-state sensor according to claim 1, wherein the lowermost layer of the phosphor on the sensor section side is an adhesive binder. 7. The radiation according to claim 1, wherein the thickness of the phosphor layer is 100 μm or less, and a separate phosphor layer is provided on the phosphor layer. Solid sensor. 8. The radiation solid-state sensor according to claim 7, wherein the separate phosphor layer is an anisotropic phosphor layer.