JP2003158607A - Image read method and image recording and reading apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an image recording and reading apparatus employing an image detector, which can read an image signal with a high S/N even in an area with a low recording optical intensity. SOLUTION: The image recording and reading apparatus employs the image detector 10 formed by stacking a first stripe electrode 12, a photo conductive layer 13, a rectifier layer 14, and a second stripe electrode 16. After the storage section 19 stores uniform electronic charges by applying a recording voltage between both elements 12a and 16a from a variable voltage power supply 72, emitting a recording light 12 to the first stripe electrode 12 reduces latent image electronic charges depending on a dose. A reading voltage higher than the recording voltage is applied between any of the elements 12a and the element 16a and a current detection circuit 70 detects a charging current flowing to the image detector 10 depending on the application of this voltage.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic latent image from a radiation solid-state detector in which radiation image information is recorded as latent image charge in a power storage unit that stores an amount of charge according to the dose of irradiated radiation. TECHNICAL FIELD The present invention relates to a reading method and a recording / reading device for reading.

[0002]

2. Description of the Related Art Conventionally, an apparatus using an image detector, such as a facsimile, a copying machine or a radiation image pickup apparatus, has been known.

For example, in a medical radiation imaging apparatus or the like, a photoconductor (layer) such as a selenium plate that is sensitive to radiation such as X-rays is used in order to reduce the exposure dose to a subject and improve diagnostic performance. The radiation solid-state detector (electrostatic recording body) is used as an image detector, the radiation solid-state detector is irradiated with radiation, and an electric charge of an amount according to the dose of the irradiated radiation is stored in the radiation solid-state detector. The radiation image information is recorded as an electrostatic latent image in the power storage unit by accumulating it as a latent image charge in the storage unit, and the radiation solid-state detector in which the radiation image information is recorded is scanned by a laser beam or a line light source. A method of reading radiation image information from a radiation solid-state detector is known (for example, Japanese Laid-Open Patent Publication No. HEI 6).
-217322, U.S. Pat. No. 4,857,723, JP-A-9-5906, etc.).

In the method described in the above-mentioned JP-A-6-217322, a conductor layer, an X-ray photoconductive layer, a dielectric layer, and an electrode layer having a large number of microplates corresponding to pixels are laminated, and TF for reading charges on the microplate
A radiation solid-state detector formed by connecting T (thin film transistors) is used as an image detector, and the solid-state radiation detector is irradiated with X-rays transmitted through an object to be formed between each microplate and the conductive layer. After the radiation image information is recorded in the radiation solid state detector by accumulating the latent image charge in the electricity storage unit, the TFT is scan driven to read the latent image charge accumulated in the electricity storage unit to the outside of the radiation solid state detector. The radiographic image information is read by.

Further, the method described in the above-mentioned US Pat. No. 4,857,723 discloses that a photoconductive layer is sandwiched between insulating layers,
Furthermore, a radiation solid-state detector having a structure in which the outside is sandwiched by striped electrodes having a large number of linear electrodes orthogonal to each other is used as an image detector, and this radiation solid-state detector is irradiated with X-rays that have passed through a subject and both stripes are formed. Formed at the intersection of the electrodes and at the interface between the photoconductive layer and the insulating layer 2
After the radiation image information is recorded on the solid-state radiation detector by accumulating latent image charges of different polarities in the two electricity-storage units, the solid-state radiation detector is scanned with laser light as reading light and accumulated in the electricity storage unit. Radiation image information is read by reading the generated latent image charges to the outside of the radiation solid-state detector.

Further, in the method described in JP-A-9-5906, the first electrode layer / the photoconductive layer for recording / the trap layer as a storage unit / the photoconductive layer for reading / the second electrode layer are arranged in this order. The radiation solid-state detectors that are stacked are used as image detectors, and primary exposure is detected by irradiating uniform exposure light with a high voltage (high voltage) applied between the electrodes arranged on both sides in advance. It is formed in the electricity storage part of, then short-circuited between both electrodes,
Alternatively, by applying a high voltage or opening the recording photoconductive layer to generate an electric field, X is transmitted through the subject.
After the radiation image information is recorded on the radiation solid-state detector by irradiating a line to accumulate latent image charges in the electricity storage unit,
By short-circuiting both electrodes and scanning the radiation solid-state detector with laser light as reading light, the latent image charge accumulated in the power storage unit is read out to the outside of the radiation solid-state detector.
The radiation image information is read.

[0007]

However, in the method disclosed in the above-mentioned Japanese Patent Laid-Open No. 6-217322, it is necessary to provide a charge reading TFT in the electrode layer provided with the microplate, and the method of image detector There is a problem that the structure is complicated and the manufacturing cost is high.

In the method described in the above-mentioned US Pat. No. 4,857,723, although the structure of the radiation solid state detector is simple and the manufacturing cost is low, the method for reading the latent image charge accumulated in the detector is Since the structure is complicated and requires an expensive laser scanning system, the structure of the reader becomes complicated,
There is a problem that the cost of the entire system from recording to reading increases.

In addition to the problems of the method described in the above-mentioned US Pat. No. 4,857,723, the method described in the above-mentioned Japanese Patent Application Laid-Open No. 9-5906 forms a primary charge in the power storage portion of the detector. Since a light source for primary charging is required for this purpose, there is a problem that the device becomes larger and the system cost becomes higher.

In view of such circumstances, the present applicant first
A radiation solid-state detector formed by stacking a first electrode layer / photoconductive layer / power storage unit / rectifying layer / second electrode layer in this order is used as an image detector, and a high voltage is applied between both electrodes of the photoconductive layer. After the radiation image information is recorded on the radiation solid-state detector by irradiating X-rays that have passed through the subject with an electric field generated in the storage unit to accumulate latent image charge in the storage unit, a high voltage is again applied between the electrodes. We proposed a method of reading radiation image information by applying and reading the recharge current that flows at this time. (See Japanese Patent Application No. 2000-227253).

Now, the process of recording and reading the latent image charge in this system will be described in more detail. First, a high voltage is applied between both electrodes to accumulate (charge) charges in the image detector. After that, when the voltage application is stopped and X-rays transmitted through the subject, that is, the recording light is irradiated, a charge pair corresponding to the recording light intensity is generated in the photoconductive layer, and the charge pair and the recording light are accumulated before the irradiation of the recording light. The generated charge recombines and disappears. By applying a high voltage again at the time of reading, a charging voltage for recharging the charge disappeared at the time of recording is applied between both electrodes, and the latent image charge can be read by detecting the charging current flowing at this time. In such a method, a large amount of electric charge disappears in a portion where the recording light intensity is high, so a high charging voltage is applied during recharging, and a small amount of electric charge disappears in a portion where the recording light intensity is low. Sometimes a low charging voltage will be applied.

By the way, the rectifying layer included in the image detector used in the present system has a property that it can flow a current in one direction without disturbing it, but hardly flows a current in the other direction, that is, a property similar to a diode. However, since the responsiveness decreases when the charging voltage applied to the image detector during reading is low, latent image charges that cannot be read occur within a predetermined reading time, resulting in S / N. May decrease.

The present invention has been made in view of the above problems, and Japanese Patent Application No. 2000-2 in which radiation image information is recorded.
An object of the present invention is to provide an image reading method and an image recording / reading device capable of reading an image signal with a high S / N even in a region where the recording light intensity is low, from an image detector having a configuration like No. 27253. It is a thing.

[0014]

According to the image reading method of the present invention, a first electrode layer having a first stripe electrode composed of a large number of linear electrodes, which is exposed to an electromagnetic wave for recording, exhibits conductivity. A second striped electrode including a photoconductive layer, a power storage unit for accumulating charges, a rectifying layer, and a second striped electrode formed of a plurality of linear electrodes formed so as to intersect the linear electrode of the first striped electrode. By applying a recording voltage between the first stripe electrode and the second stripe electrode of the image detector having the electrode layers in this order, a substantially uniform charge is accumulated in the power storage unit, and recording is performed. In the image reading method of reading the image information from the image detector in which the image information is recorded as an electrostatic latent image in the power storage unit by irradiating the image detector with the recording electromagnetic wave after the application of the application voltage is stopped. 1 stripe electric A reading voltage higher than the recording voltage is applied between the linear electrode of the second stripe electrode and the linear electrode of the second stripe electrode, and the charging current flowing into the image detector by the application of the reading voltage is detected. By this, an electric signal of a level corresponding to the amount of electric charge accumulated in the power storage unit is obtained.

The image recording / reading apparatus of the present invention comprises a first electrode layer having a first stripe electrode composed of a large number of linear electrodes,
A photoconductive layer that exhibits conductivity by being irradiated with an electromagnetic wave for recording, a power storage unit that stores charges, a rectifying layer, and a large number of lines formed so as to intersect the linear electrodes of the first stripe electrode. An image detector having a second electrode layer having a second stripe electrode made of a striped electrode in this order;
A voltage applying unit that applies a voltage between the first stripe electrode and the second stripe electrode is provided, and the voltage applying unit applies a recording voltage between the first stripe electrode and the second stripe electrode during recording. As a result, a substantially uniform charge is accumulated in the power storage unit, and after the application of the recording voltage is stopped,
Image information is recorded as an electrostatic latent image on the power storage unit by irradiating the image detector with a recording electromagnetic wave, and is read between the first stripe electrode and the second stripe electrode during reading by the voltage applying unit. In an image recording / reading device that reads an image information by acquiring an electric signal of a level corresponding to the amount of electric charge accumulated in a power storage unit by detecting a charging current flowing into an image detector when a working voltage is applied. A voltage changing means for changing the voltage applied to the image detector by the voltage applying means is provided.

In the above description, the "recording electromagnetic wave" is an electromagnetic wave that is incident on the detector and may be an electromagnetic wave that carries image information, for example, radiation such as X-rays or light (not limited to visible light). Etc. can be used. Further, it may be light having a wavelength different from the wavelength of the primary electromagnetic wave emitted by excitation of the primary electromagnetic wave (radiation, light) emitted from the electromagnetic wave source.

The "linear electrode" means an electrode having an elongated shape as a whole, and may have any shape such as a cylindrical shape or a prismatic shape as long as it has an elongated shape. Especially, it is preferable to use a plate electrode. When the linear electrodes of the first stripe electrodes are arranged so as to intersect the linear electrodes of the second stripe electrodes, it is preferable that they are arranged substantially orthogonal to each other.

The term "rectifying layer" means a layer that allows a current to flow in one direction without disturbing it, but hardly allows a current to flow in the other direction.

In the image recording / reading apparatus of the present invention, it is desirable that the voltage changing means changes the reading voltage to be higher than the recording voltage. Further, when the reading voltage is applied, the recording light intensity becomes 0 due to the dark current or the like.
The charge corresponding to the charging current detected in the portion of is marked as Q ₀ , and the charge corresponding to the minimum value of the charging current detected in the portion where the recording light intensity is other than 0 when the reading voltage is applied is designated as Q ₁ . At this time, it is desirable to change the reading voltage so as to satisfy the expression √ (2 · Q ₀ ) <Q ₁ .

The image recording / reading apparatus of the present invention is an electric signal obtained by subtracting the electric signal detected at the portion where the recording light intensity is 0 when the reading voltage is applied from the electric signal detected by the image recording / reading apparatus. An image forming unit that forms an image based on the above may be provided.

[0021]

According to the image reading method and the image recording / reading apparatus of the present invention, the first electrode layer, the photoconductive layer, the power storage unit,
By applying a recording voltage between both electrodes of an image detector including a rectifying layer and a second electrode layer in this order, a substantially uniform charge is accumulated in the power storage unit, and When the image information is recorded as an electrostatic latent image in the power storage unit by irradiating the image detector with electromagnetic waves for recording after the application is stopped, the image is recorded between both electrodes when the image information is read from the image detector. Since the reading voltage higher than the working voltage is applied, the high charging voltage is applied even in the portion where the recording light intensity is low, so that the latent image charge has a high S / N ratio.
Can be read at.

[0022]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a diagram showing a schematic configuration of an image detector (hereinafter also simply referred to as a detector) used in an image recording / reading apparatus according to a first embodiment of the present invention, and FIG. 1 (A) is a perspective view. ,
1B is an XY sectional view of the P arrow finger portion, and FIG. 1C is an XZ sectional view of the Q arrow finger portion.

The detector 10 includes a first electrode layer 11 having a first stripe electrode 12 formed by arranging a large number of flat plate-shaped elements (linear electrodes) 12a in a stripe pattern.
A photoconductive layer 13, a rectifying layer 14, and a number of flat plate-like elements 16 which exhibit conductivity by being irradiated with recording light (hereinafter referred to as recording light) L2 that carries image information of a subject.
Second stripe electrode 1 in which a is arranged in a stripe shape
The second electrode layer 15 on which 6 is formed is laminated in this order. Then, the respective layers are arranged on the substrate 20 so that the second electrode layer 15 side is in contact with the upper surface of the glass substrate 20. An electricity storage unit 19 that accumulates latent image charges is formed between the photoconductive layer 13 and the rectifying layer 14.

Each element 1 of the first stripe electrode 12
2a is each element 16a of the second stripe electrode 16
Are arranged so as to be substantially orthogonal to. In each case, the same number of elements as the number of pixels in the arrangement direction are provided. The arrangement pitch of the elements defines the pixel pitch, and the wider the width of each element of the first stripe electrode 12 is,
It is preferable because the S / N is improved. For example, a pitch of 10
The width is 0 μm and the width is 90 μm. In the gap 11a between the elements 12a and the gap 15a between the elements 16a,
It is filled with an insulating material that is transparent to the recording light L2. The stripe electrodes 12 and 16 only need to have conductivity, and each element 12a and 16a is made of gold,
It can be made from a single metal such as silver, aluminum or platinum, or an alloy such as indium oxide.

The material of the photoconductive layer 13 is a-Si.
A photoconductive substance containing (amorphous silicon) as a main component is suitable. The thickness of the photoconductive layer 13 is preferably such that the recording light L2 can be sufficiently absorbed, but if it is too thick compared to the thickness of the rectifying layer 14, the signal current that can be taken out becomes small. The thickness is set according to the thickness of the rectifying layer 14.

At the interface between the photoconductive layer 13 and the rectifying layer 14, that is, in the electricity storage unit 19, at each pixel position corresponding to the position where the element 12a and the element 16a intersect,
The microplates (conductive members) 18 are arranged in a spaced apart state between the adjacent microplates 18, that is, in a floating state in which they are not connected to each other.

It is preferable that each of the micro plates 18 has a size that occupies a range substantially the same size as the pixel size. It should be noted that this dimension is not necessarily limited to one that occupies a range substantially the same as the pixel size, and may be larger or smaller than the pixel size. The smallest pixel size that can be resolved corresponds to the larger one of the size of the microplate 18 and the crossing area of the elements 12a and 16a.

The microplate 18 includes a photoconductive layer 13 and a rectifying layer 14 using, for example, vacuum evaporation or chemical deposition.
And a single metal such as gold, silver, aluminum, copper, chromium, titanium, or platinum, or an alloy such as indium oxide, and can be formed from an extremely thin film (for example, about 100 Å).

The rectifying layer 14 is formed from the glass substrate 20 side by P
It is assumed that the type semiconductor and the N-type semiconductor are arranged in this order. In the present embodiment, a member containing a-Si as a main component is used as the P-type semiconductor and the N-type semiconductor, but in this case, in order to improve the rectifying property, a member between the P-type semiconductor and the N-type semiconductor is used. It is necessary to arrange an insulator. That is, the rectifying layer 14 of the present embodiment includes, from the glass substrate 20 side, a P-type a-Si layer 14a as a P-type semiconductor, an i (intrinsic; neutral) a-Si layer 14b as an insulator, and an N-type. It is assumed that the N-type a-Si layer 14c as a semiconductor is sequentially arranged. As a result, a diode (rectifying element) 14d in which the P-type a-Si layer 14a serves as an anode and the N-type a-Si layer 14c serves as a cathode is formed. In general,
Since the detector 10 is formed by sequentially laminating each layer from the glass substrate 20 side, in this case, the element 16a is vapor-deposited on the glass substrate 20 and then the P-type a-Si layer 14a is laminated. The space 15a between the elements 16a in the electrode layer 15 is also filled with P-type a-Si.

It should be noted that the drawings are schematic diagrams and do not accurately reflect the relationship among the thickness of each layer, the pixel pitch, or the pixel width. That is, in the drawing, the thickness of the rectifying layer 14 is shown to be larger than the width of the element 12a, but the thickness of the rectifying layer 14 is equal to the pixel pitch (100 in the previous example.
μm), which is set sufficiently smaller than the
It is about m.

The P-type a-Si layer 14a as an anode is also laminated on each element 12a of the first stripe electrode 12, and each element 12a functions as an anode terminal. On the other hand, the N-type a-Si layer 14 as the cathode
Microplates 18 are laminated on c, and each microplate 18 functions as a cathode terminal. That is, in effect, the individual (each) diode 14d is connected between each element 12a and each microplate 18.

As in this embodiment, a P-type semiconductor,
If a member containing a-Si as a main component is used as the insulator and the N-type semiconductor, the specific resistance of the P-type semiconductor and the N-type semiconductor becomes small, and charge transfer occurs inside the semiconductor, which hinders image formation. There is. Therefore, in order to prevent this charge transfer, the image detector 10 of the present embodiment has an N-type semiconductor as an N-type semiconductor arranged on the power storage unit 19 side (specifically, the side in contact with the microplate 18). -Si layer 14
c is divided into pixels so as to correspond to a pixel position which is an intersection position of both elements 12a and 16a, and the P-type a-Si layer 14a as a P-type semiconductor arranged on the element 16a side of the second stripe electrode 16 is an element. 16a is divided into stripes corresponding to 16a.

The P-type a-Si layer 14a may be divided into the pixel pitch (that is, the arrangement pitch of the elements 12a) and the pixel width in the longitudinal direction of the element 16a. In this case, P-type a-
The Si layer 14a is pixel-divided so as to correspond to a position facing the N-type a-Si layer 14c, that is, a pixel position which is an intersecting position of both the elements 12a and 16a.

In addition, the P-type a-Si layer 14a and the N-type a-S
ia-Si as an insulator disposed between the i layer 14c and the i layer 14c
The layer 14b may also be divided into stripes so as to correspond to either one of the elements 12a and 16a, or may be divided into pixels so as to correspond to the pixel positions, that is, both elements 1
It may be divided at a desired pixel pitch and pixel width in each of the arrangement directions of 2a and 16a.

In FIG. 2, the P-type a-Si layers 14a and ia-S are formed.
A schematic configuration of a detector in which both the i layer 14b and the N-type a-Si layer 14c are pixel-divided so as to correspond to the pixel positions is shown by the same drawing method as in FIG. In addition, the P-type a-Si layer 14a and the N-type a-Si layer 14c
An enlarged view around the rectifying element in the XY cross section of the detector in which one pixel is divided so as to correspond to the pixel position is shown in (D).

FIGS. 3 and 4 are schematic block diagrams of the image recording / reading apparatus 1 using the detector 10.
3 is a diagram showing a perspective view of the detector 10, and FIG. 4 is a schematic circuit diagram of the image recording / reading device 1 showing the detector 10 in an equivalent circuit. The glass substrate 20 is omitted in the illustration. In FIG. 4, the capacitor Ca is the microplate 18
And the element 12a. The image recording / reading device 1 can be used, for example, as a sensor for a film digitizer.

In the current detection circuit 70, a current detection amplifier section 71 as an image signal acquisition means for detecting the charging current flowing into the detector 10, a variable voltage power source 72, and one element 12a of the first stripe electrode 12 are provided. A switch unit 7 having a large number of switching elements 75a connected to each other
5, and control means 76 are provided. The switching element 75a preferably has a sufficiently large off resistance, and for example, a MOS-FET is used.

The current detection amplifier section 71 has a large number of operational amplifiers 71a which constitute the main part of the current detection amplifier 71. The non-inverting input terminal (+) of each operational amplifier 71a is connected to the positive electrode of the variable voltage power source 72, and the inverting input terminal (-) is individually connected to each element 16a. The negative electrode of the variable voltage power supply 72 is commonly connected to one terminal of the switching element 75a.

At the time of recording, the switch section 75 controls each element 12a of the first stripe electrode 12 to the variable voltage power supply 7
2 and the control means 76 so as to connect to each element 16a of the second stripe electrode 16 via an imaginary short circuit of the operational amplifier 71a. Further, the variable voltage power supply 72 is controlled by the control means 76 so as to generate a recording voltage.

At the time of reading, the switch section 75 sequentially switches each of the elements 12a of the first stripe electrode 12 in the longitudinal direction of the element 16a, and the switched elements 12a are imaginary of the variable voltage power supply 72 and the operational amplifier 71a. It is controlled by the control means 76 so as to be connected to each element 16a of the second stripe electrode 16 via a short circuit. Further, the variable voltage power source 72 is controlled by the control means 76 so as to generate a reading voltage. The sequential switching of the element 16a in the longitudinal direction by the switch portion 75 corresponds to the sub-scanning, and the charging current flowing into the detector 10 by the switching connection by the switch portion 75 causes the element 12 of the first stripe electrode 12 to have a charging current.
Each a is simultaneously (in parallel) detected by each current detection amplifier, whereby an electric signal having a level corresponding to the amount of charges accumulated in the power storage unit 19 is acquired.

That is, the variable voltage power source 72 and the switch section 7
5 and the control means 76 also constitute a voltage application means for applying a predetermined voltage between the first stripe electrode 12 and the second stripe electrode 16.

Further, the variable voltage power source 72 and the control means 7
6 is the first stripe electrode 12 and the second stripe electrode 1
It also constitutes a voltage changing means for changing the voltage applied between 6 and 6. Here, the voltage changing means may connect the recording voltage power source and the reading voltage power source in parallel, instead of the variable voltage power source 72, and switch both power sources by a switch during recording and during reading.

Here, the effect of increasing the reading voltage higher than the recording voltage will be described. FIG. 17 (A)
FIG. 17 is a diagram showing the detection characteristics of the recharge current at the time of reading a portion where the recording light intensity is high and the portion where the recording light intensity is low. FIG. FIG. 6 is a diagram showing detection characteristics of recharge current when the same voltage (normal voltage) is applied and when a voltage higher than that during recording is applied.

As shown in FIG. 17A, when the recording light intensity is high, a high charging voltage is applied, so that the forward resistance of the diode 14d becomes low and the response becomes high.
It is possible to read all the latent image charges within the time t _pix for detecting a signal for one pixel, but when the recording light intensity is low, the forward resistance of the diode 14d increases and the responsiveness deteriorates. All the latent image charges cannot be read out within the time t _pix , and the latent image charges are left unread (hatched portion in the figure).

Therefore, as shown in FIG. 17B, by applying a voltage higher than the recording voltage at the time of reading, even if the recording light intensity is low, the diode 14
Since the forward resistance of d can be made relatively low,
The response can be improved as compared with the case where the same voltage as the recording voltage is applied during reading.

When the reading voltage is set higher than the recording voltage, the false charge Q ₀ is generated by the difference between the reading voltage and the recording voltage, and the false charge Q is generated from the read charge.
Also by subtracting the _0, the formula N = √ by this false charge _{Q 0} (2
The shot noise N is superimposed on the image signal by the amount represented by Q ₀ ). The recording light intensity is 0 when a reading voltage is applied.
The charge corresponding to the minimum value of the charging current detected at a portion other than when the Q _1, the shot noise becomes larger than the Q _1, the detection of the charging current corresponding to the charge Q ₁ not correctly performed. Therefore, the voltage changing means is expressed by the formula √ (2
・ It is desirable to change the reading voltage so that Q ₀ ) <Q ₁ is satisfied.

The output signal S of the current detection circuit 70 is input to the data processing unit 3, temporarily stored in the storage device 4, and then subjected to predetermined image processing, and the processed data D is displayed on the image display means 5. A visible image representing image information is input and displayed on the image display means 5.

The data processing section 3 serves as an image forming means. Here, when reading is performed with the reading voltage higher than the recording voltage, since the pseudo charge Q ₀ is generated by the difference between the reading voltage and the recording voltage, the data processing unit 3 When an image is formed by, it is desirable to subtract the signal corresponding to the pseudo charge Q ₀ from the output signal S before performing the processing. Since the pseudo charge Q ₀ corresponds to the voltage difference, it can be detected in advance in the state where the recording light L2 is not incident and stored in the storage device 4.

Hereinafter, in the image recording / reading apparatus 1 having the above-described structure, uniform electric charge is accumulated in the electricity storage section 19 of the detector 10,
After that, a method of recording image information as an electrostatic latent image and reading the recorded electrostatic latent image will be described.

First, the uniform charge accumulation process of accumulating uniform charges in the electricity storage unit 19 will be described with reference to the charge model shown in FIG. The negative charge (−) and positive charge (+) generated in the photoconductive layer 14 are represented by enclosing − or + in a circle in the drawing. FIG. 5 (B)
[Fig. 3] is a diagram shown by an equivalent circuit. Both are glass substrates 2
0 and the layer structure in the rectifying layer 14 are omitted.

In order to store a uniform charge in the electricity storage unit 19 of the detector 10, first, all the switching elements 75a of the switch unit 75 are turned on so that the first stripe electrode 12 and the second stripe electrode 16 are connected to each other. The second stripe electrode 1
The recording voltage is applied from the variable voltage power source 72 through the operational amplifier 71a so that the 6 side becomes the positive electrode.

As a result, a predetermined electric field distribution is generated between the element 12a and the element 16a, and the electric field is
A capacitor Ca formed between the element 12a and the microplate 18 and a diode 14d formed between the element 12a and the microplate 18 are applied. At this time, since the voltage is applied so that the second stripe electrode 16 side is positive and the element 12a side is negative, the diode 14d is forward-biased and turned on, and the positive charge of the element 16a passes through the diode 14d and the Move to plate 18. Therefore, all the elements 12a of the first stripe electrode 12 are negatively charged, the microplate 18 is positively charged, and the voltage (recording voltage) applied by the variable voltage power source 72 is applied between the microplate 18 and the element 12a. 5) is generated (FIG. 5 (A)).

As described above, when the image detector according to the present invention is applied, since a light source is not required as a means for primary charging for accumulating uniform charges in the power storage unit, a simple recording device is constructed. be able to.

Next, an electrostatic latent image recording process for recording image information as an electrostatic latent image will be described with reference to the charge model shown in FIG. As in the uniform charge accumulation process, the negative charge (−) and the positive charge (+) generated in the photoconductive layer 13 by the recording light L2 are represented by encircling − or + in the drawing. And The glass substrate 20 and the layer structure in the rectifying layer 14 are omitted.

When recording an electrostatic latent image on the detector 10,
First, all the switching elements 75a of the switch section 75 are turned off to stop the voltage application from the variable voltage power source 72 to the detector 10 (FIG. 6 (A)).

Next, the film 9 on which the image information of the subject is recorded is irradiated with the visible light L1, and the recording light L2 carrying the image information of the subject transmitted through the transmitting portion 9a is firstly detected by the detector 10.
The electrode layer 11 side is irradiated. When the recording light L2 is irradiated from the first electrode layer 11 side, the first stripe electrode 12
The side shall be transparent to the recording light L2.

The recording light L2 is applied to the first electrode layer 11 of the detector 10.
To generate positive and negative charge pairs according to the dose of the recording light L2 in the photoconductive layer 13 (FIG. 6B). Between the first stripe electrode 12 and the electricity storage unit 19, the negative charges charged in each element 12a and the microplate 1 are provided.
A predetermined electric field distribution is generated between the uniform positive charges captured by the microplates 8 and charged on the microplate 18. Therefore, according to this electric field distribution, positive charges of the generated charge pairs move to the first electrode layer 11 side, and the stripe electrode 12
Element 12a and the negative charge charged in the element 12a are recombined and disappear. Also, the negative charge moves to the power storage unit 19 side,
The positive charges charged in the microplate 18 are recombined with the charges and disappear (right side of FIG. 6C).

On the other hand, since the visible light L1 applied to the non-transmissive portion 9b of the film 9 does not pass through the non-transmissive portion 9b, no charge pair is generated in the photoconductive layer 13 corresponding to that portion. , Element 12a of the first stripe electrode 12
Negative charge remains charged in the diode, and the diode 14d
Does not pass a current from the cathode to the anode, so positive charges remain charged on the microplate 18 (FIG. 6).
(Left side of (C)).

By the way, in the above description, it is assumed that a charge pair for eliminating all the charges charged in the microplate 18 of the element 12a and the power storage unit 19 is generated in the photoconductive layer 13. However, the amount of charge pairs actually generated depends on the intensity and dose of the recording light L2 incident on the detector 10. The application of the recording voltage does not always generate a charge pair capable of extinguishing all the charges uniformly charged in the detector.

That is, since the generated charge amount is substantially proportional to the intensity and light amount of the recording light L2 that has passed through the transmission portion 9a of the film 9 and is incident on the detector 10, the charge remaining in the detector 10 remains. Is equal to the amount of uniform charges accumulated in the power storage unit 19 by applying the recording voltage, minus the amount of generated charges. Therefore, the amount of positive charge of the electricity storage unit 19 changes according to the intensity and dose of the recording light L2, and the electrostatic latent image is recorded on the detector 10. Since the latent image charges are concentrated and accumulated on the microplate 18, the sharpness at the time of recording can be improved.

Next, the electrostatic latent image reading process for reading the electrostatic latent image recorded on the detector will be described with reference to the charge model shown in FIG. As in the uniform charge accumulation process and the recording process, the negative charge (−) and the positive charge (+) generated in the photoconductive layer 13 are represented by − or + in circles in the drawing. To do. The glass substrate 20 and the layer structure in the rectifying layer 14 are omitted.

When the electrostatic latent image is read from the detector 10, when the switching element 75a of the switch section 75 is turned on, it is connected between the element 12a and the element 16a via the imaginary short circuit of the operational amplifier 71a.
The reading voltage is applied from the variable voltage power source 72 (FIG. 7A).

Next, the switching elements 75a of the switch section 75 are sequentially switched in the longitudinal direction of the element 16a from one end to the other end to be turned on one by one, and are connected to the turned-on switching elements 75a. A reading voltage is applied from the variable voltage power source 72 between the element 12a and each element 16a of the second stripe electrode 16 (FIG. 7B).

By the voltage application to the detector 10 by this sequential switching, in the element 12a and the microplate 18 that sandwich the portion where the positive charge is not accumulated in the microplate 18, as in the uniform charge accumulation process, the element is formed. 12a is negatively charged and the microplate 18 is positively charged.

FIG. 8A is a diagram showing the state of this charging by an equivalent circuit, and FIG. 8B is a diagram showing the change of the charging current Ic due to this charging.

Current detection amplifier 7 of current detection amplifier section 71
1d simultaneously detects the charging current flowing into the detector 10 due to the movement of the charge accompanying the charging of the charge for each element 16a, and sequentially switches the switch unit 75 to correspond to the latent image charge for each pixel. Current detection amplifier 71d
An image signal representing the electrostatic latent image is obtained by detecting the voltage change observed at the output section of, i.e., image information is read. The responsiveness of the charging current is a function of the forward resistance of the diode 14d and the capacitance Ca of the photoconductive layer.

As described above, when the image detector according to the present invention is applied, since a light source is not required as a means for reading the latent image charge, a simple reading device can be constructed.

Since the diode 14d has a capacitance, electric charges are redistributed so that the element 12a and the element 16a have the same potential. The signal current that can be taken out, that is, the charging current that contributes to the image signal is the photoconductive layer 1
Since it is the recharge current to the diode 3, only the charge distributed to the diode 14d changes. Therefore, in order to increase the charging current that contributes to the image signal, the diode 14
The ratio C1 / C of the capacitance C1 of d and the capacitance C2 of the photoconductive layer 13
It is better to make 2 smaller. To do this, element 1
It is effective to make 6a thin and reduce the area of the diode 14d to reduce the capacitance ratio, or to make the photoconductive layer 13 as thin as possible with a thickness sufficient for light absorption.

9A and 9B are views showing the schematic arrangement of an image detector used in the image recording / reading apparatus according to the second embodiment of the present invention. FIG. 9A is a perspective view and FIG. XY of the arrow finger part
A cross-sectional view and FIG. 9C are XZ cross-sectional views of the Q arrow finger portion.

As the detector 10 of the second embodiment, similar to the detector 10 of the first embodiment, the rectifying layer 14 is mainly composed of a-Si and is illustrated. As described above, the P-type a-Si layer 14a, the ia-Si layer 14b, and the N-type a-Si layer 1 that form the rectifying layer 14 are formed.
All 4c are pixel-divided so as to correspond to pixel positions.

FIG. 10 is a diagram showing the overall structure of the image recording / reading apparatus 1 using the solid-state radiation detector according to the second embodiment. In the first embodiment, the film 9 on which the image information of the subject is recorded in advance is the irradiation target of the visible light L1, but in the second embodiment, the radiation L1 is emitted from the radiation source 90 to the subject 9 itself. The detector 10 is irradiated with the recording light L2 carrying the radiation image information of the subject 9 that has passed through the transmitting portion 9a of the subject 9 and is exposed to the subject. The detector 10 and the current detection circuit 70 are housed in the light shielding case 2. The output signal S of the current detection circuit 70 is input to the data processing unit 3, is temporarily stored in the storage device 4, is subjected to predetermined image processing, and the processed data D is input to the image display means 5. A visible image representing the radiation image information is displayed on the image display means 5.

In the detector 10 according to the second embodiment, the recording light L2 is excited to the outside of the first electrode layer 11 of the detector 10 according to the first embodiment, so that the recording light L2 is excited.
While stacking a phosphor (scintillator) 17a as a wavelength conversion layer that emits fluorescence L4 having a wavelength different from the wavelength of L2,
The first electrode layer is transparent to the fluorescent light L4,
The photoconductive layer 13 is rendered conductive by being irradiated with the fluorescent light L4 emitted from the phosphor 17a.

As the phosphor 17a, it is preferable to use a phosphor having a high wavelength conversion efficiency for the recording light L2. For example, when a photoconductive substance containing a-Si as a main component is used as the substance of the photoconductive layer 13, the photoconductive layer 13 exhibits extremely efficient conductivity with respect to green light. It is preferable to use a phosphor containing GOS, CsI: Tl, or the like as a main component so that the green light is emitted from the phosphor 17a.

As the material of the photoconductive layer 13, a-Se is used.
When a photoconductive substance containing as a main component is used, the photoconductive layer 13 becomes extremely efficient to exhibit blue light (wavelength of 400 to 430 nm; the same applies below). YTaO ₄ : Nb, LaOBr: Tb, CsI: so that the blue light is emitted from 17a.
It is preferable to use a phosphor whose main component is Na or the like.

The electrostatic latent image recording process when using the detector 10 according to the second embodiment will be described with reference to the charge model shown in FIGS. 11 and 12. Also here, as in the case of using the detector 10 according to the first embodiment, the negative charge (−) and the positive charge generated in the photoconductive layer 13 by the fluorescence L4 excited and emitted by the recording light L2. (+) Is represented by enclosing-or + in the drawing. The uniform charge charging process of charging a uniform charge by applying a voltage and the electrostatic latent image reading process are the same as those in the case of using the detector 10 according to the first embodiment, and therefore will be described. Is omitted. The glass substrate 20 and the layer structure in the rectifying layer 14 are omitted.

First, the electrostatic latent image recording process when the recording light L2 is irradiated from the first electrode layer 11 side, that is, the phosphor 17a side will be described with reference to FIG.

In the uniform charge storage state shown in FIG.
After the application of the voltage to the detector 10 is stopped, the radiation L1 is bombarded onto the subject 9, and the recording light L2 carrying the radiation image information of the subject which has passed through the transmission part 9a of the subject 9 is detected by the detector 1
The fluorescent substance 17a side of 0 is irradiated. Thereby, the phosphor 1
Excitation of the recording light L2 causes the fluorescent light L4 to be emitted from 7a in an amount corresponding to the dose of the recording light L2 (FIG. 11B). The fluorescent light L4 emitted from the fluorescent body 17a passes through the first electrode layer 11 to generate positive and negative charge pairs in the photoconductive layer 13 in an amount corresponding to the light amount of the fluorescent light L4 (FIG. 11C).

As in the case of using the detector 10 according to the first embodiment, of the generated charge pairs, the negative charge is the first.
It moves to the side of the electrode layer 11 and recombines with the positive charges charged in the element 12a of the stripe electrode 12 to disappear. In addition, the positive charge moves to the power storage unit 19 side and recombines with the negative charge charged in the microplate 18 to disappear (right side of the detector 10 in FIG. 11D).

On the other hand, since the radiation applied to the non-transmissive portion 9b of the subject 9 does not pass through the subject, fluorescence L4 is not emitted from the phosphor 17a corresponding to that portion, and the first stripe Element 12a of electrode 12
Is charged with a positive charge, and the microplate 18 remains charged with a negative charge (on the left side of the detector 10 in FIG. 11C).

That is, the detector 1 according to the first embodiment
At 0, the photoconductive layer 1 is directly exposed to the irradiation of the recording light L2.
3 are different from the charge pairs generated in the photoconductive layer 13 in the photoconductor layer 13 in response to the irradiation of the fluorescent light L4 in the detector 10 according to the second embodiment. In other words, in other words, there is no great difference in the process of recording the electrostatic latent image on the detector 10, except for the difference between the recording light L2 and the fluorescence L4.

Next, the case of irradiating the recording light L2 from the second electrode layer 15 side will be described with reference to FIG. Note that FIG. 12A is the same as FIG. 11A. In this case, the rectifying layer 14 and the microplate 18
Is at least transparent to the recording light L2.

In the charged state shown in FIG.
After the application of the voltage to 0 is stopped, the subject 9 is bombarded with radiation, and the recording light L2 that has passed through the transmission part 9a of the subject 9 is applied to the second electrode layer 15 side of the detector 10. The recording light L2 is
The photoconductive layer 1 is transmitted through the second electrode layer 11 and the rectifying layer 14.
Within 3 (3), positive and negative charge pairs corresponding to the dose of the recording light L2 are generated (FIG. 12 (B)).

However, since the radiation absorption efficiency of the photoconductive layer 13 is not so high, some of the recording light L2 may pass through the photoconductive layer 13. The recording light L2 ′ transmitted through the photoconductive layer 13 is transmitted through the first electrode layer 11 and the phosphor 17a.
Incident on. As a result, the recording light L is emitted from the phosphor 17a.
Excitation of 2 ′ causes emission of fluorescence L4 in a light amount corresponding to the dose of the recording light L2 ′. Fluorescence L4 emitted from phosphor 17a
Is transmitted through the first electrode layer 11 and the fluorescence L4 in the photoconductive layer 13
Generates positive and negative charge pairs according to the amount of light (Fig. 1
2 (C)). Hereinafter, the recording light from the above-mentioned phosphor 17a side
Similar to the case of irradiating L2, element 12
The electric charge of a and the power storage unit 19 disappears (FIG. 12D).

As described above, when the detector 10 in which the phosphors 17a are laminated is used, positive and negative charge pairs can be extremely efficiently generated in the photoconductive layer 13 by the wavelength-converted fluorescence L4 as well as the recording light L2. Because I will be able to
Whereas when the detector 10 according to the first embodiment is used, some of the recording light L2 does not contribute to the accumulation of latent image charges and passes through the photoconductive layer 13, whereas hand,
The charge generation efficiency can be improved.

When the recording light L2 is irradiated from the second electrode layer 15 side, the radiation incident side and the photoconductive layer 13 where the radiation absorption amount of the phosphor 17a is larger than when the recording light L2 is irradiated from the phosphor 17a side. Are adjacent to each other, the charge generation efficiency is high. That is, the radiation source 90, the phosphor 17a, the photoconductive layer 1
Radiation source 90, photoconductive layer 1
3. The arrangement of the phosphors 17a in this order improves the charge generation efficiency and improves the S / N ratio during reading.

Further, especially when cesium iodide (CsI) is used as the phosphor, the radiation absorptivity can be increased, so that even if the irradiation amount of the recording light L2 is reduced, a sufficiently large amount of charge can be obtained. Can be accumulated, and the exposure dose to the subject 9 can be kept low.

In the detector 10 according to the second embodiment, the phosphor 17a is laminated on the outer side of the first electrode layer 11, but the phosphor is laminated on the outer side of the second electrode layer 15. It may be a structure.

13A and 13B are views showing the schematic arrangement of an image detector used in the image recording / reading apparatus according to the third embodiment of the present invention. FIG. 13A is a perspective view and FIG. FIG. 13C is an XZ sectional view of the Q arrow finger portion.

The detector 10 according to the third embodiment is the same as the detector 10 according to the second embodiment described above.
A phosphor that emits fluorescence L5 having a wavelength different from the wavelength of the recording light L2 ′ by exciting the recording light L2 ′ transmitted through the photoconductive layer 13 to the outside of the second electrode layer 15 (in this example, the outside of the glass substrate 20). 17b is further laminated, the rectifying layer 14 and the second electrode layer 15 are transparent to the fluorescent light L5, and the photoconductive layer 13 is a fluorescent light L4 emitted from the fluorescent material 17a.
It is assumed that it exhibits conductivity by being irradiated with fluorescence L5 emitted from the phosphor 17b.

To make the rectifying layer 14 transparent to the fluorescent light L5, the P-type a-Si layer 1 forming the rectifying layer 14 is used.
4a, ia-Si layer 14b, and N-type a-Si layer 14
As a substance forming c, a-SiC or a-SiN doped with carbon C or nitrogen N may be used. a
When -Si is doped with carbon C or nitrogen N, the bandgap can be increased, whereby absorption at the short wavelength side is large, and it has transparency to green fluorescence at the relatively long wavelength side. Because you can. Other known dopants may be used as well as carbon C and nitrogen N as long as the band gap is widened so that absorption on the short wavelength side becomes large.

To make a-SiC or a-SiN P-type, a small amount of boron B may be doped, and to make it N-type, a small amount of phosphorus P may be doped.

Further, as shown in FIG. 14, the size of the diode 14d of the rectifying layer 14 is formed by etching so as to be approximately ⅔ or less of the minimum resolvable pixel size, and each diode 14d is formed. The space may be filled with a substance that is transparent to the fluorescence L5 emitted by the phosphor 57b.

The method of making the rectifying layer 14 transparent to the fluorescent light L5 can also be used as a method of making the rectifying layer 14 transparent to the recording light L2.

The microplate 18 is preferably transparent to at least the fluorescence L5 emitted by the phosphor 17b, and it is preferable to use a known transparent conductive film such as an ITO film.

The material of the photoconductive layer 13 is a phosphor 17
A photoconductive substance containing a-Si as a main component, which exhibits conductivity extremely efficiently with respect to green light emitted from a and 17b, is suitable. The thickness of the photoconductive layer 13 is the fluorescence L4, L5
It is preferable that the thickness be sufficient to absorb the.

As the phosphors 17a and 17b, it is preferable to use phosphors having high wavelength conversion efficiency, and as described above, a photoconductive substance containing a-Si as a main component is used as the substance of the photoconductive layer 13. In case of doing, the phosphors 17a, 17
b, so that green light is emitted, GOS, CsI: T
It is preferable to use a phosphor whose main component is l or the like.

The electrostatic latent image recording process when using the detector 10 according to the third embodiment will be described with reference to the charge model shown in FIGS. Also here, as in the case of using the detector 10 according to the first embodiment, the negative charge (−) and the positive charge generated in the photoconductive layer 13 by the fluorescence L4 excited and emitted by the recording light L2. (+) Is represented by enclosing-or + in the drawing. In both cases, the glass substrate 20 and the layer structure in the rectifying layer 14 are omitted. The uniform charge charging process of charging a uniform charge by applying a voltage and the electrostatic latent image reading process are the same as those in the case of using the detector 10 according to the first embodiment, and therefore will be described. Is omitted.

In the uniform charge storage state shown in FIG.
After the voltage application to the detector 10 is stopped, the subject 9 is irradiated with radiation, and the recording light L2 that has passed through the transmitting portion 9a of the subject 9 is applied to the phosphor 17a side of the detector 10.

As a result, the amount of fluorescence L4 corresponding to the dose of the recording light L2 is emitted from the phosphor 17a (FIG. 15).
(B)). The fluorescent light L4 passes through the first electrode layer 11 to generate positive and negative charge pairs in the photoconductive layer 13 in an amount corresponding to the light amount of the fluorescent light L4 (FIG. 15C). Of the generated charge pairs,
Negative charges move to the first electrode layer 11 side, and the element 12a
Disappears by recombining with the positive charge charged in the
The positive charge moves to the power storage unit 19 side, and the microplate 18
Negative charges that are charged in the background are recombined and disappear (Fig. 1
5 (D) right side of the detector 10). On the other hand, in the portion of the subject 9 facing the non-transmissive portion 9b, the element 12a is positively charged and the microplate 18 remains negatively charged (the left side portion of the detector 10 in FIG. 15D). ). That is, the process up to this point is the same as the process of recording the electrostatic latent image by irradiating the phosphor 17 side with the recording light L2 in the detector 10 according to the second embodiment.

By the way, in the above description, it is assumed that the charge pairs for eliminating all the charges charged in the microplate 18 of the element 12a and the power storage unit 19 are generated in the photoconductive layer 13. The amount of the charge pair generated at 1 depends on the intensity and dose of the recording light L2 incident on the detector 10. Further, even if the intensity and the dose are the same, the amount of charge pairs generated varies depending on the conversion efficiency of the phosphor 17a and the charge generation efficiency of the photoconductive layer 13. That is,
Since it is not always possible to generate a charge pair capable of erasing all the uniformly charged charges in the detector 10, the element 12a and the power storage unit are also provided in the portion corresponding to the transmissive portion 9a of the subject 9. Part of the electric charge remains charged on the microplate 18 of FIG. 19 (FIG. 16).
(A)).

Further, some of the recording light L2 passes through the phosphor 17a without being converted into fluorescence L4 inside the phosphor 17a. The transmitted recording light L2 ′ passes through the first electrode layer 11, the photoconductive layer 13, the rectifying layer 14, and the second electrode layer 15 and excites the phosphor 17b. As a result, the recording light L2 '
The amount of the fluorescence L5 corresponding to the dose is emitted from the phosphor 17b (FIG. 16 (B)). The fluorescent light L5 passes through the second electrode layer 15 and the rectifying layer 14, and generates positive and negative charge pairs in the photoconductive layer 13 in an amount corresponding to the light amount of the fluorescent light L5 (FIG. 16).
(C)). After that, the same action as that of the fluorescence L4 described above is performed, and the charges of the element 12a and the power storage unit 19 disappear (FIG. 16D).

In this way, when the phosphors 17A and 17b are laminated on both sides of the detector 10, the recording light L2 transmitted through the phosphor laminated on the outer side of one electrode layer of the detector 10 is recorded.
Is converted into fluorescence by the phosphor laminated on the other side, and the photoconductive layer 1 is also converted by the fluorescence emitted by the other phosphor.
It becomes possible to generate a charge pair in the photoconductor 3, and the photoconductivity is higher than that in the case where the phosphor is laminated only on the outer side of one of the electrode layers as in the detector 10 according to the second embodiment described above. The charge generation efficiency in the layer 13 can be increased to increase the amount of current that can be taken out as a signal, and the S / N ratio at the time of reading can be further improved.

In the above description, the recording light L2 is irradiated from the phosphor 17a side, but the recording light L2 may be irradiated from the phosphor 17b side. in this case,
The microplate 18 is preferably transparent to at least the fluorescence L5 emitted by the phosphor 17b, and it is preferable to use a known transparent conductive film such as an ITO film.

The preferred embodiments of the image detector, the method and apparatus for recording image information on the detector, and the method and apparatus for reading image information from the detector on which the image information is recorded have been described above. However, the present invention is not limited to the above-described embodiments, and can be variously modified without changing the gist of the invention.

For example, in the above description, the rectifying layer 14
The P-type a-Si layer 14a is the anode and the N-type a-S is
Diode (rectifying element) 1 in which i layer 14c serves as a cathode 1
4d is described as being configured, but the configuration may be such that the direction of the diode is reversed. In this case, the connection mode of the variable voltage power source 72 and the like which configure the current detection circuit 70 may be changed so as to correspond to the change in the direction of the diode.

In the above description, a microplate is provided between the photoconductive layer and the rectifying layer in order to favorably form the electricity storage unit.
The present invention is not limited to this, and any structure may be adopted as long as the power storage unit that stores latent image charges can be formed inside or near the inside of the photoconductive layer.
For example, a well-known trap layer (see, for example, US Pat. No. 4,535,468) that captures and stores latent image charges that represent an electrostatic latent image, acts as a substantially insulator against latent image charges, and A charge transport layer that acts substantially as a conductor with respect to a charge having a polarity opposite to the latent image charge (for example, Japanese Patent Application Laid-Open No. 2000-105297 and Japanese Patent Application No. 10-
No. 271374) may be provided between the photoconductive layer and the rectifying layer. When a trap layer is provided,
Latent image charges are held and stored in the trap layer or at the interface between the trap layer and the photoconductive layer. On the other hand, when the charge transport layer is provided, the latent image charge is held / stored at the interface between the charge transport layer and the photoconductive layer. In addition, a trap layer or a charge transport layer may be provided, and a large number of minute conductive members such as microplates may be provided separately for each pixel at the interface between the trap layer or charge transport layer and the photoconductive layer. Good.

Furthermore, in each of the detectors 10 according to the second and third embodiments described above, the fluorescent substance is integrated with the detector, but the present invention is not necessarily limited thereto. However, the present invention is not limited to this, and the phosphor and the detector may be provided separately, and at the time of recording, for example, the phosphor may be arranged in front of the detector 10 to irradiate the recording light. .

[Brief description of drawings]

FIG. 1 is a perspective view of an image detector used in an image recording / reading apparatus according to a first embodiment of the present invention (A), an XY sectional view of a P arrow finger portion (B), and an XZ sectional view of a Q arrow finger portion (C). )

FIG. 2 is a diagram showing a schematic configuration of a detector in which a rectifying layer is divided into pixels, and is a perspective view (A), an XY sectional view of a P arrow finger portion (B), and an XZ sectional view of a Q arrow finger portion (C). ), Enlarged view around the rectifier (D)

FIG. 3 is a schematic configuration diagram of an image recording / reading apparatus according to the first embodiment of the present invention.

FIG. 4 is a schematic circuit diagram of a recording / reading device showing the image detector as an equivalent circuit.

FIG. 5 is a charge model (A) and an equivalent circuit diagram (B) showing a uniform charge accumulation process when the image detector according to the first embodiment is used.

FIG. 6 is a charge model (A) showing an electrostatic latent image recording process when the image detector of the first embodiment is used.
(C), equivalent circuit diagram (D)

7A to 7C are charge models (A) to (C) showing an electrostatic latent image reading process for detecting a charging current when the image detector according to the first embodiment is used.

FIG. 8 is a diagram showing a redistribute of positive charges by a capacitor model in the case of detecting the charging current (A) and a diagram showing a change of the charging current (B).

FIG. 9 is a perspective view (A) of an image detector used in the image recording / reading apparatus according to the second embodiment of the present invention, an XY sectional view of a P arrow finger portion (B), and an XZ sectional view of a Q arrow finger portion (C). )

FIG. 10 is a diagram showing an overall configuration of an image recording / reading apparatus according to a second embodiment of the present invention.

11A to 11D are charge models (A) to (D) showing an electrostatic latent image recording process in which recording light is emitted from the phosphor side when the image detector of the second embodiment is used.

12A to 12D are charge models (A) to (D) showing an electrostatic latent image recording process in which recording light is emitted from the second electrode layer side when the image detector of the second embodiment is used.

FIG. 13 is a perspective view of an image detector used in the image recording / reading apparatus of the third embodiment of the invention (A), XY of P arrow finger portion.
Sectional view (B), XZ sectional view of the Q finger section (C)

FIG. 14 is a diagram showing a modification of the image detector according to the third embodiment.

FIG. 15 is a charge model (A) showing an electrostatic latent image recording process when the image detector of the third embodiment is used.
(D)

16 is a charge model (A) to (D) showing an electrostatic latent image recording process following FIG. 15;

FIG. 17 is a diagram showing detection characteristics of recharge current during reading.

[Explanation of symbols]

10 Radiation solid state detector 11 First electrode layer 12 First stripe electrode 12a element (linear electrode) 13 Photoconductive layer 14 Rectifying layer 14d diode (rectifying element) 15 Second electrode layer 16 Second stripe electrode 16a element (linear electrode) 17a phosphor 17b phosphor 18 Micro plate (conductive member) 19 Power storage unit 20 glass substrates 70 Current detection circuit 71 Current detection amplifier section (image signal acquisition means) 72 Variable voltage power supply 75 Switch (connecting means) 76 Control means 90 Recording light irradiation means Radiation for L2 recording (recording light) L4, L5 fluorescence

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 27/146 H04N 5/335 W 5C051 31/09 1/04 E 5C072 H04N 1/028 H01L 27/14 C 5F088 5/32 K 5/335 31/00 AF Term (reference) 2G088 EE01 FF02 GG21 JJ05 JJ31 KK32 KK40 LL11 LL15 LL17 4C093 AA27 CA06 EB13 EB17 EB20 FA32 FC05 CA05 CA05 CA05 CA05 CA05 CA05 CA05 CA05 CA05 CA05 CA05 CA05 CA05 CA05 CA05 CA05 FB09 FB19 FB23 FB25 5B047 AA17 AB02 BB10 BC01 5C024 AX12 CX03 DX04 EX03 GX05 GX06 GX07 HX29 5C051 AA01 BA02 DA06 DB01 DB04 DB06 DB07 DC02 DC03 DC07 DE03 5C072 AA01 BA11 EA10 EA10 FA08 AB05 A08 FA05 UF11 A08 FA05 UA11 VA11 UA10 FA08 UA11 VA11 UA10 FA08 UA11 VA11

Claims (5)

[Claims] 1. A first electrode layer having a first stripe electrode composed of a large number of linear electrodes, a photoconductive layer which exhibits conductivity by being irradiated with electromagnetic waves for recording, a power storage unit for accumulating charges, and rectification. An image detector having a layer and a second electrode layer having a second stripe electrode formed of a number of linear electrodes formed so as to intersect the linear electrode of the first stripe electrode in this order. By applying a recording voltage between the first stripe electrode and the second stripe electrode, a substantially uniform charge is accumulated in the power storage unit, and after the application of the recording voltage is stopped, In the image reading method of reading the image information from the image detector in which the image information is recorded as an electrostatic latent image in the power storage unit by irradiating the image detector with the recording electromagnetic wave, the first stripe A reading voltage higher than the recording voltage is applied between the polar linear electrode and the linear electrode of the second stripe electrode, and the charging current flowing into the image detector by the application of the reading voltage. Is detected to obtain an electric signal having a level corresponding to the amount of electric charge accumulated in the power storage unit. 2. A first electrode layer having a first stripe electrode composed of a large number of linear electrodes, a photoconductive layer which exhibits conductivity when irradiated with an electromagnetic wave for recording, a power storage unit for accumulating charges, and rectification. An image detector having a layer and a second electrode layer having a second stripe electrode formed of a number of linear electrodes formed so as to intersect the linear electrode of the first stripe electrode in this order. And a voltage applying means for applying a voltage between the first stripe electrode and the second stripe electrode, and the voltage applying means is provided between the first stripe electrode and the second stripe electrode during recording. By applying a recording voltage to the storage unit, a substantially uniform charge is accumulated in the power storage unit, and after the application of the recording voltage is stopped, the recording electromagnetic wave is radiated to the image detector to generate an image. Emotion Is recorded in the power storage unit as an electrostatic latent image, and when the reading voltage is applied between the first stripe electrode and the second stripe electrode at the time of reading by the voltage applying unit, the voltage is applied to the image detector. An image recording / reading device for reading the image information by obtaining an electric signal having a level corresponding to the amount of charges accumulated in the power storage unit by detecting a charging current flowing in, wherein the image detector is provided by the voltage applying unit. An image recording / reading apparatus comprising a voltage changing unit for changing a voltage applied to the image recording / reading apparatus. 3. The image recording / reading apparatus according to claim 2, wherein the voltage changing unit changes the reading voltage to be higher than the recording voltage. 4. The electric charge corresponding to the charging current detected at the portion where the recording light intensity is 0 when the reading voltage is applied is Q ₀ , and the recording light is applied when the reading voltage is applied. When the electric charge corresponding to the minimum value of the charging current detected in the portion where the intensity is other than 0 is Q ₁ , the equation √ (2 · Q ₀ ) <Q ₁
4. The image recording / reading device according to claim 3, wherein the reading voltage is changed so as to satisfy the above condition. 5. An image is formed based on an electric signal obtained by subtracting an electric signal detected at a portion where the recording light intensity is 0 when a reading voltage is applied from the electric signal detected by the image recording / reading device. The image recording / reading apparatus according to any one of claims 2 to 4, further comprising: