JP5270121B2 - Imaging device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To perform an offset correction of an imaging apparatus with high precision. <P>SOLUTION: Two correction regions R1 and R2 are provided while being made to correspond to two image processing substrates 33a and 33b, and a shield plate which blocks radiations is provided to a part corresponding to the correction region R on the radiation incident surface side of a radiation image detector, thereby acquiring a correction signal and also acquiring an image signal simultaneously. The offset correction of a signal detected by the image processing substrate 33a is made using a signal acquired from the correction region R1 and the offset correction of a signal detected by the image processing substrate 33b is made using a signal acquired from the correction region R2. <P>COPYRIGHT: (C)2009,JPO&amp;INPIT

Description

  The present invention relates to an image detector having a power storage unit that records image information as an electrostatic latent image, and a plurality of signal output linear wirings for outputting a current corresponding to the electrostatic latent image recorded in the power storage unit Image pickup comprising: signal detection means for detecting an analog signal output from the signal output linear wiring; and AD conversion means for converting the analog signal detected by the signal detection means into a digital signal It relates to the device.

  Today, in radiography for medical diagnosis and the like, a radiographic image detector (hereinafter also simply referred to as a detector) is used that converts a charge obtained by detecting radiation into an electrical signal representing radiographic image information and outputs it. Various radiation image information recording / reading apparatuses have been proposed. Various types of radiation image detectors have been proposed for use in this apparatus. From the viewpoint of a charge reading process for reading out charges to the outside, a TFT (thin film transistor) type and a detector for reading light are used. There is an optical readout type that reads by reading (electromagnetic wave for reading).

  As an optical readout radiation image detector capable of achieving both high-speed readout response and efficient signal charge extraction, the present applicant has disclosed recording radiation or A first conductive layer that is transparent to light emitted by excitation of the radiation (hereinafter referred to as recording light), a recording photoconductive layer that exhibits conductivity by receiving recording light, and the first conductive layer are charged. A charge storage layer that acts as a substantially insulator for charges of the same polarity as the charged charge, and acts as a conductor for charges of the opposite polarity to the charge of the same polarity. A photoconductive layer for reading that exhibits conductivity by receiving and a second conductive layer including a signal output linear wiring that is transparent to the read light are laminated in this order, and a latent image carrier for carrying image information is formed. Accumulate image charge (electrostatic latent image) It proposes a detector that accumulates.

  In Patent Document 2 and Patent Document 3, in particular, the wiring of the second conductive layer is a stripe wiring composed of a signal output linear wiring that is transmissive to a large number of reading lights, and charge accumulation. Detection in which a large number of auxiliary linear wirings for outputting an electric signal of a level corresponding to the amount of latent image charge accumulated in the layer are provided alternately and parallel to the signal output linear wiring A vessel is proposed.

  As described above, by arranging the sub stripe wiring composed of a large number of auxiliary line wirings as the second conductive layer, a new capacitor is formed between the charge storage layer and the sub stripe wiring, and the recording light is used. Transport charges having a polarity opposite to that of the latent image charge accumulated in the charge accumulation layer can be charged also to the sub-stripe wiring by charge rearrangement at the time of reading. Thereby, the amount of the transport charge distributed to the capacitor formed between the stripe wiring and the charge storage layer via the reading photoconductive layer is relatively smaller than that in the case where the sub stripe wiring is not provided. As a result, it is possible to increase the amount of signal charge that can be taken out from the detector to improve the reading efficiency, and at the same time, it is possible to achieve both high-speed readout response and efficient signal charge extraction. It is like that.

  In the image pickup apparatus having the radiation image detector as described above, a signal is generated even when the image detector is not irradiated with radiation, that is, an offset is a problem. Various methods for acquiring a correct image signal have been proposed.

For example, in Patent Document 3, the offset is canceled by subtracting a signal acquired for non-radiation from an image signal obtained by irradiating radiation.
JP 2000-105297 A JP 2000-284056 A JP 2004-516901 A

  However, since the amount of offset is not always constant and varies, there is a possibility that the offset cannot be accurately corrected with a signal acquired in advance for radiation non-irradiation as in Patent Document 3 above.

  The offset is not only caused by the radiation image detector, but also caused by individual differences in electronic circuit parts such as AD conversion means for converting the analog signal output from the radiation image detector into a digital signal. Since this may occur, this point needs to be taken into consideration.

  The present invention has been made in view of the above circumstances, and an object thereof is to provide an image pickup apparatus capable of correcting an offset with high accuracy.

  An image pickup device according to the present invention is adapted to store a storage unit that records image information as an electrostatic latent image when irradiated with recording light carrying image information, and an electrostatic latent image recorded in the storage unit A plurality of signal output linear wirings for outputting a current, and a plurality of pixels based on the arrangement of the signal output linear wirings (pixels in this case correspond to pixel electrodes in the case of the TFT readout method) An image detector in which a detection region having a two-dimensional detection area including a pixel on data derived based on a signal output linear wiring of an optical reading method and a signal output linear An image pickup apparatus comprising: a signal detection unit that detects an analog signal output from a wiring; and an AD conversion unit that converts the analog signal detected by the signal detection unit into a digital signal. The direction of In one direction, the detection area is divided into an image area for detecting image information and a correction area for acquiring a correction signal for correcting a signal detected in the image area, The correction area has a width corresponding to a plurality of pixels in the one direction, and a shielding member for shielding the recording light is provided on the recording light incident surface side of the correction area. To do.

  In the image pickup apparatus, it is preferable that the width of the correction region is 0.5 mm or more in the one direction.

  In the one direction, the image area and the correction area may be provided continuously.

  Further, when a plurality of correction areas are provided in accordance with the number of image processing substrates connected to the image detector, these correction areas may be provided continuously.

  In the above, the “image detector” is a detector that detects recording light carrying image information of a subject, for example, radiation, and outputs an image signal representing a radiation image related to the subject, and directly or once receives incident radiation. An image signal representing a radiographic image related to a subject can be obtained by converting the light into light and then converting it into electric charge and outputting the electric charge to the outside.

  There are various types of image detectors. For example, from the aspect of the charge generation process that converts radiation into electric charge, the fluorescence emitted from the phosphor when irradiated with radiation is detected by the photoelectric conversion element. The photo-conversion radiation image detector that converts the signal charge obtained in this way into an image signal (electrical signal) and outputs it, or the signal charge generated in the radiation conductor when irradiated with radiation is converted into an electrical signal. From the aspect of the charge conversion process that reads out the external charge radiation image detector or the like, or the charge readout process that reads out the charge to the outside, the TFT readout system that scans and reads out the TFT (thin film transistor) connected to the power storage unit Or a light reading method in which reading light (electromagnetic wave for reading) is irradiated to the detector to read out, or a combination of the direct conversion method and the light reading method. Some like the improved direct conversion type which is proposed in the Patent Document 1 and Patent Document 2 by human.

  According to the image pickup device of the present invention, when receiving the recording light carrying the image information, the power storage unit that records the image information as an electrostatic latent image, and the electrostatic latent image recorded in the power storage unit An image detector having a plurality of signal output linear wirings for outputting a corresponding current, and a detection region having a plurality of pixels based on the arrangement of the signal output linear wirings, two-dimensionally; An image pickup apparatus comprising: a signal detection unit that detects an analog signal output from a signal output line wiring; and an AD conversion unit that converts the analog signal detected by the signal detection unit into a digital signal. Correction for obtaining an image area for detecting image information in one of the two-dimensional directions and a correction signal for correcting a signal detected in the image area. Application The correction area has a width corresponding to a plurality of pixels in the one direction, and a shielding member for shielding the recording light is provided on the recording light incident surface side of the correction area. .

  As described above, when the detection area in the image detector is divided into the image area and the correction area, there is a possibility that the radiation applied to the image area may wrap around the correction area. Therefore, by setting the width of the correction area to a width corresponding to a plurality of pixels in the one direction, the image area using a signal that is not affected by radiation among the signals detected in the correction area. This signal can be corrected. In addition, since a shielding member for shielding the recording light is provided on the recording light incident surface side of the correction area, the correction signal can be obtained simultaneously when recording the image information. You will not receive. From the above, the image pickup apparatus of the present invention can correct the offset with high accuracy.

  Also, in the vicinity of the edge of the detection area of the image detector, there is a risk that the characteristics may change due to electric field concentration during electrostatic latent image recording. Therefore, the image area and the correction area are continuously provided in the one direction. As a result, the offset can be corrected with high accuracy without being affected by characteristic fluctuations near the edge of the region.

  Further, when a plurality of correction areas are provided in accordance with the number of image processing substrates connected to the image detector, the recording light can be easily shielded by continuously providing a plurality of correction areas adjacent to each other. Can be done. Further, in this configuration, since the correction area is arranged on one side of the image area, it is possible to set the image area close to the end face of the substrate, which is convenient for applications such as mammography (mammography). It is.

  Hereinafter, the image pickup apparatus of the present invention will be described. FIG. 1 is a top view showing a schematic configuration of an optical reading type radiographic image capturing apparatus as an example of the image capturing apparatus of the present invention, FIG. 2 is a sectional view taken along line II-II in FIG. 1, and FIG. It is a top view which shows the structure of the 2nd conductive layer.

  The image pickup apparatus 1 includes a charge storage layer 13 that records image information as an electrostatic latent image, and a plurality of signal output linear lines for outputting a current corresponding to the electrostatic latent image recorded in the charge storage layer 13. A radiation image detector 10 that includes the second conductive layer 15 having wiring and records image information, a current detection unit 30 that detects an analog signal output from the signal output linear wiring, and a current detection unit 30 And an image processing board 33 for converting the analog signal detected by the digital signal into a digital signal.

  The radiographic image detector 10 includes a first conductive layer 11 that transmits radiation carrying a radiographic image of a subject, and a photoconductive layer for recording that generates charges when irradiated with radiation transmitted through the first conductive layer 11. 12. A charge storage layer 13 which acts as an insulator for the latent image charge generated in the recording photoconductive layer 12 and acts as a conductor for transport charge having a polarity opposite to that of the latent image charge. A reading photoconductive layer 14 that generates an electric charge when irradiated with light and a second conductive layer 15 that transmits the reading light are laminated on a glass substrate 20 in this order. The latent image charge generated in the recording photoconductive layer 12 is stored in the charge storage layer 13. The glass substrate 20 serving as a support member is formed of a transparent and rigid glass, for example, soda lime glass with a thickness of 1.8 mm.

  A metal thin film is preferably used as the first conductive layer 11. Materials include Au, Ni, Cr, Au, Pt, Ti, Al, Cu, Pd, Ag, Mg, MgAg 3-20% alloy, Mg-Ag intermetallic compound, MgCu 3-20% alloy, Mg-Cu metal What is necessary is just to make it form from metals, such as an intermetallic compound.

  In particular, Au, Pt, and Mg—Ag intermetallic compounds are preferably used. For example, when Au is used, the thickness is preferably 15 nm or more and 200 nm or less, more preferably 30 nm or more and 100 nm or less. For example, when an MgAg3-20% alloy is used, it is more preferable to use a thickness of 100 nm to 400 nm.

  The second conductive layer 15 includes a plurality of signal output linear wirings and a plurality of common linear wirings alternately arranged in parallel in a region where the recording photoconductive layer 12 and the reading photoconductive layer 14 overlap. It has a structured. The width in the direction (vertical direction in FIG. 3) perpendicular to the longitudinal direction (horizontal direction in FIG. 3) of each linear wiring is, for example, 10 μm for signal output linear wiring and 20 μm for common linear wiring. The signal output linear wiring and the common linear wiring have a thickness of 0 by a material such as IZO (Indium Zinc Oxide) or ITO (Indium Tin Oxide) that is transparent to the reading light irradiated from the glass substrate 20 side. It is formed in a flat line shape of 2 μm. The common line wirings are electrically connected to each other in a region that does not overlap the recording photoconductive layer 12, the reading photoconductive layer 14, and the like, and are configured to have a common potential.

  A color filter that transmits only light of a predetermined wavelength is formed on the glass substrate 20 side of the common line wiring, and a transparent organic insulating layer is formed between the common line wiring and the color filter. The color filter is formed with a thickness of 1.2 μm by a photosensitive resist in which a pigment is dispersed, for example, a red resist used for a color filter of an LCD. Further, in order to eliminate the step due to the color filter layer, a transparent organic insulating layer such as PMMA (methacrylic resin) is formed with a thickness of, for example, 1.8 μm.

  As shown in FIG. 3, in the second conductive layer 15, a region overlapping with the first conductive layer 11, the recording photoconductive layer 12, the charge storage layer 13, and the reading photoconductive layer 14 becomes a detection region A, The detection area A is an image area G for detecting image information and a correction area for acquiring a correction signal for correcting a signal detected in the image area G in the vertical direction in FIG. And R.

  Half of the large number of signal output linear wirings and the large number of common linear wirings are connected to the left image processing board 33a and the rest are connected to the right image processing board 33b, so the left image processing board 33a. Two correction regions R are provided: a correction region R1 connected to the image processing substrate 33b and a correction region R2 connected to the right image processing board 33b.

  Further, as shown in FIG. 1, a shielding plate 40 that shields radiation is provided at a portion corresponding to the correction region R on the radiation incident surface side of the radiation image detector 10, and the detection region at the time of radiation irradiation is provided. A is configured such that radiation is incident only on the image region G of A.

  Further, the correction region R has a width corresponding to a plurality of pixels in the vertical direction in FIG. This is because there is a possibility that the radiation to be applied only to the image region G may wrap around the correction region R. Further, since the amount of radiation wraps around varies depending on the imaging conditions, the signal is not affected by the radiation with a certain width. This is to make it possible to obtain Here, the width of the correction region R in the region division direction of the detection region A is preferably 0.5 mm or more.

  The recording photoconductive layer 12 is a photoconductive material that absorbs radiation and generates charges, and includes an amorphous selenium compound, Bi12MO20 (M: Ti, Si, Ge), Bi4M3O12 (M: Ti, Si, Ge), Bi2O3, BiMO4 (M: Nb, Ta, V), Bi2WO6, Bi24B2O39, ZnO, ZnS, ZnSe, ZnTe, MNbO3 (M: Li, Na, K), PbO, HgI2, PbI2, CdS, CdSe, CdTe, BiI3, GaAs, etc. It is comprised with the compound which has at least 1 as a main component. Of these, an amorphous selenium compound is particularly preferable.

  In the case of an amorphous selenium compound, an alkali metal such as Li, Na, K, Cs, and Rb doped in a small amount between 0.001 ppm and 1 ppm in the layer, LiF, NaF, KF, CsF, RbF A small amount of fluoride such as 10 ppm to 10000 ppm, P, As, Sb, and Ge added between 50 ppm and 0.5%, and As doped from 10 ppm to 0.5% And those doped with a slight amount of Cl, Br, and I between 1 ppm and 100 ppm can be used.

  In particular, amorphous selenium containing about 10 ppm to 200 ppm of As, amorphous selenium containing about 0.2% to 1% of As and further containing 5 ppm to 100 ppm of Cl, and an alkali metal of about 0.001 ppm to 1 ppm are contained. Amorphous selenium is preferably used.

  Also, Bi12MO20 (M: Ti, Si, Ge), Bi4M3O12 (M: Ti, Si, Ge), Bi2O3, BiMO4 (M: Nb, Ta, V), Bi2WO6, Bi24B2O39, ZnO, ZnS of several nanometers to several microns. , ZnSe, ZnTe, MNbO 3 (M: Li, Na, K), PbO, HgI 2, PbI 2, CdS, CdSe, CdTe, BiI 3, GaAs, or other photoconductive substance fine particles can also be used.

  In the case of amorphous selenium, the thickness of the recording photoconductive layer 12 is preferably 100 μm or more and 2000 μm or less. In particular, it is particularly preferably in the range of 150 μm or more and 250 μm or less for mammography, and in the range of 500 μm or more and 1200 μm or less for general photographing applications.

  The charge storage layer 13 may be a film that is insulative with respect to the polar charge to be stored, such as an acrylic organic resin, polyimide, BCB, PVA, acrylic, polyethylene, polycarbonate, polyetherimide, or a polymer such as As2S3, It is composed of sulfides such as Sb2S3 and ZnS, oxides and fluorides. Furthermore, it is more preferable that it is insulative with respect to the charge of the polarity to be accumulated and that it is conductive with respect to the charge of the opposite polarity, and the product of mobility × life is 3 digits or more depending on the polarity of the charge Substances with differences are preferred.

Preferred compounds include the following.

・ As2Se3
・ As2Se3 doped with Cl, Br, I from 500 ppm to 20000 ppm ・ As2Se3 (SexTe1-x) 3 (0.5 <x <1) with Se substituted to about 50% with Te
・ As2Se3 Se substituted to about 50% with S ・ As2Se3 As concentration changed about ± 15% ・ Amorphous Se-Te system with Te of 5-30 wt% Such chalcogenide elements In the case of using a substance including the charge storage layer, the thickness of the charge storage layer is preferably 0.4 μm or more and 3.0 μm or less, more preferably 0.5 μm or more and 2.0 μm or less. Such a charge storage layer may be formed by a single film formation or may be laminated in a plurality of times.

  As a preferable charge storage layer using an organic film, a compound obtained by doping a charge transport agent with a polymer such as an acrylic organic resin, polyimide, BCB, PVA, acrylic, polyethylene, polycarbonate, polyetherimide, or the like is preferably used. Preferred charge transfer agents include tris (8-quinolinolato) aluminum (Alq3), N, N-diphenyl-N, N-di (m-tolyl) benzidine (TPD), polyparaphenylene vinylene (PPV), polyalkylthiophene. , Polyvinylcarbazole (PVK), triphenylene (TNF), metal phthalocyanine, 4- (dicyanomethylene) -2-methyl-6- (p-dimethylaminostyryl) -4H-pyran (DCM), liquid crystal molecule, hexapentyloxytriphenylene And a molecule selected from the group consisting of a discotic liquid crystal molecule having a central core containing a π-conjugated condensed ring or a transition metal, a carbon nanotube, and fullerene. The doping amount is set between 0.1 and 50 wt%.

  The photoconductive layer 14 for reading is a photoconductive material that absorbs electromagnetic waves, particularly visible light, and generates electric charge. The energy gap of amorphous selenium compound, amorphous Si: H, crystalline Si, GaAs, etc. is 0.7-2.5 eV. A semiconductor material included in the range can be used. In particular, amorphous selenium is preferable.

  In the case of an amorphous selenium compound, an alkali metal such as Li, Na, K, Cs, and Rb doped in a small amount between 0.001 ppm and 1 ppm in the layer, LiF, NaF, KF, CsF, RbF A small amount of fluoride such as 10 ppm to 10000 ppm, P, As, Sb, and Ge added between 50 ppm and 0.5%, and As doped from 10 ppm to 0.5% In addition, a material in which a slight amount of Cl, Br, I is doped between 1 ppm and 100 ppm can be used.

  In particular, amorphous selenium containing about 10 ppm to 200 ppm of As, amorphous selenium containing about 0.2% to 1% of As and further containing 5 ppm to 100 ppm of Cl, and an alkali metal of about 0.001 ppm to 1 ppm are contained. Amorphous selenium is preferably used.

  The thickness of the photoconductive layer 14 for reading is preferably about 1 μm to 30 μm as long as the reading light can be sufficiently absorbed and the electric field caused by the electric charge accumulated in the charge accumulation layer 13 can drift.

  The layer configuration of the radiation image detector 10 is not limited to the layer configuration as described above, but may include other layers, and the material of each layer may have the same function as the function of each layer. For example, materials other than those described above may be used.

  The current detection unit 30 includes a plurality of TCP (Tape Carrier Packages) in which signal detection ICs (charge amplifier ICs) 31 are mounted on a flexible substrate 32. As shown in FIG. 1 and FIG. The end is connected to the signal output linear wiring and the common linear wiring of the radiation image detector 10 on the glass substrate 20, and the other end of the TCP is connected to the image processing substrate 33.

  The image processing board 33 includes an AD converter (not shown) or the like for converting an analog signal output from each signal output line wiring and detected by the signal detection IC 31 into a digital signal (image signal).

  Next, the operation of the radiation image detector 10 will be described.

  First, an electric field is formed between the first conductive layer 11 and the second conductive layer 15. In the present embodiment, a high voltage power supply (not shown) is connected between the signal output line wiring and the common line wiring of the first conductive layer 11 and the second conductive layer 15, and a bias voltage is connected between the two. Apply. When the recording photoconductive layer 12 is irradiated with radiation carrying image information in this state, positive and negative charges are generated in the recording photoconductive layer 12, and the negative charges are formed by applying the voltage. The electric field distribution is concentrated on each linear wiring of the second conductive layer 15 and accumulated as a latent image charge in the charge accumulation layer 13. The amount of latent image charge is substantially proportional to the amount of irradiation radiation, and this amount of latent image charge indicates a radiation image. On the other hand, the positive charges generated in the recording photoconductive layer 12 are attracted to the first conductive layer 11 and are combined with the negative charges injected from the voltage source and disappear.

  Next, when reading the radiation image recorded in the radiation image detector 10 as described above, the direction (vertical direction in FIG. 3) is orthogonal to the longitudinal direction (horizontal direction in FIG. 3) of the signal output linear wiring. The entire surface of the radiation image detector 10 is scanned along the longitudinal direction of the signal output linear wiring with the linear reading light extending in the direction (direction), whereby the reading photoconductive layer 14 corresponding to the scanning position of the reading light. A positive / negative charge pair is generated in the photoconductive layer 14 and the positive charge generated in the reading photoconductive layer 14 is attracted to the latent image charge of the charge storage layer 13. The negative charge generated in the reading photoconductive layer 14 is recombined with the positive charge of the signal output linear wiring and disappears. An image signal based on the latent image charge generated corresponding to each pixel at the time of reading is output to the TCP, detected by the charge amplifier IC 31, converted into a digital signal by the AD converter of the image processing board 33, and the image signal As a result, the radiation image carried by the latent image charge can be read.

  Here, a method for performing offset correction on the image signal acquired as described above will be described.

  First, pixel signals are acquired from the two correction regions R1 and R2 and the image region G in a state where no radiation is incident. Since the two correction areas R, the correction area R1 connected to the left image processing board 33a and the correction area R2 connected to the right image processing board 33b, both have a plurality of pixels, An average value SR1ave of all pixel signals in the correction region R1 and an average value SR2ave of all pixel signals in the correction region R2 are calculated. Also, Sn is a pixel signal at an arbitrary address in the image area G.

  Similarly, the average values S′R1ave and S′R2ave of the pixel signals in the correction regions R1 and R2 are calculated during normal imaging with radiation. A pixel signal at an arbitrary address in the image region G is S′n.

  When calculating the signal Snr that is offset-corrected for the pixel signal S′n detected in the left image processing board 33a, it is calculated based on the equation (1).

Snr = S′n−Sn− (S′R1ave−SR1ave) (1)
Similarly, when calculating the signal Snr that is offset-corrected for the pixel signal S′n detected on the right image processing board 33b, the signal Snr is calculated based on the equation (2).

Snr = S′n−Sn− (S′R2ave−SR2ave) (2)
By performing the offset correction according to such a procedure, the offset can be corrected with high accuracy without being affected by the variation of the offset amount or the individual difference of the image processing substrate.

  Note that when calculating the average value of the signals in the correction region R, it is not necessary to use all the signals, and the average value is calculated by excluding pixel signals that are considered to be affected by radiation wraparound. Also good. As a method of identifying a pixel signal affected by radiation wraparound, a pixel signal having a level equal to or higher than a predetermined value may be regarded as a pixel signal affected by radiation wraparound or estimated from imaging conditions. The pixel signal within the radiation wraparound range may be regarded as a pixel signal that is affected by the radiation wraparound.

  Further, the formula for performing the offset correction is not limited to the above, and any formula may be used as long as the target value can be calculated.

  As mentioned above, although preferable embodiment of this invention was described, this invention is not limited above. For example, the arrangement of the correction areas is not limited to the image area and the correction area continuously provided as shown in FIG. 3, but the number of image processing boards as shown in FIG. A plurality of correction regions (R1, R2) provided together may be provided continuously. In this case, naturally, the shielding plate must be provided at a position corresponding to the correction region. Further, the configuration of the radiation image detector is not limited to the direct conversion type, but may be an indirect conversion type using a scintillator. Also, the readout method is not limited to the optical readout method described above, and a TFT readout method may be used.

The top view which shows schematic structure of the image pick-up device of this invention II-II line sectional view in FIG. The top view which shows the structure of the 2nd conductive layer of the radiographic image detector of the said apparatus. The top view which shows the structure of the 2nd conductive layer of the radiographic image detector of another aspect.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Image pick-up device 10 Radiation image detector 11 1st conductive layer 12 Photoconductive layer for recording 13 Charge storage layer 14 Photoconductive layer for reading 15 2nd conductive layer 20 Glass substrate 30 Current detection part 31 Signal detection IC
32 Flexible substrate 33 Image processing substrate 40 Shield plate

Claims (5)

A power storage unit that records the image information as an electrostatic latent image and outputs a current corresponding to the electrostatic latent image recorded in the power storage unit when irradiated with recording light carrying image information A plurality of signal output linear wirings, and an image detector in which a detection region having a plurality of pixels based on the arrangement of the signal output linear wirings is two-dimensionally configured;
Signal detection means for detecting an analog signal output from the signal output linear wiring;
An image pickup apparatus comprising: an AD conversion means for converting an analog signal detected by the signal detection means into a digital signal,
In one of the two-dimensional directions, the detection area includes an image area for detecting the image information and a correction signal for correcting an offset of a signal detected in the image area. Divided into correction areas for acquisition,
The correction region has a width corresponding to a plurality of pixels in the one direction,
An image pickup apparatus, wherein a shielding member for shielding the recording light is provided on the recording light incident surface side of the correction region. Offset correction means for acquiring signals from both the image area and the correction area at the time of one shooting, and correcting the offset based on the signal of the correction area acquired at the same shooting time for the signal of the image area The image capturing apparatus according to claim 1, further comprising: The image capturing apparatus according to claim 1 , wherein a width of the correction region is 0.5 mm or more in the one direction. 4. The image capturing apparatus according to claim 1 , wherein the image area and the correction area are continuously provided in the one direction . 5. A plurality of image processing boards provided with the signal detection means are connected to the image detector,
4. The image capturing apparatus according to claim 1 , wherein the correction area corresponding to each of the plurality of image processing substrates is continuously provided. 5.

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