JP2008305959A - Repairing method of radiation image detector, image processing method, radiation image detector, and image processor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To make it possible not to expand any defect by using a detector for a long term, when there is the defect on an image which is generated resulting from a malfunction in a photoconduction layer constituting the detector in a radiation image detector. <P>SOLUTION: In the radiation image detector, equipped with: a photoconduction layer 12 for recording generating a charge by receiving an irradiation of a recording light; and plural windings 15a for impressing a voltage to the photoconduction layer 12 for recording or the like, wherein plural picture elements are constituted based on arrangements of the wirings 15a, the wiring 15a corresponding to the defect on a previously detected image is cut in an extraction portion, while forming the extraction portion extending to a predetermined connection position with an external connection terminal in a region which doesn't overlap the photoconduction layer 12 for recording or the like in the wiring 15a. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a radiation image detector comprising a photoconductive layer that generates an electric charge when irradiated with recording light, and a plurality of wirings for applying a voltage to the photoconductive layer. Repair method when it occurs, image processing method for the image signal output from the repaired radiation image detector, radiation image detector that repairs when a defect occurs on the image, and repaired radiation image The present invention relates to an image processing apparatus for an image signal output from a detector.

  Today, in radiography for medical diagnosis and the like, a radiographic image detector (hereinafter also simply referred to as a detector) is used that converts a charge obtained by detecting radiation into an electrical signal representing radiographic image information and outputs it. Various radiation image information recording / reading apparatuses have been proposed. Various types of radiation image detectors have been proposed for use in this apparatus. From the viewpoint of a charge reading process for reading out charges to the outside, a TFT (thin film transistor) type and a detector for reading light are used. There is an optical readout type that reads by reading (electromagnetic wave for reading).

  The present applicant has disclosed, in Patent Document 1, Patent Document 2, and Patent Document 3, as an optical readout radiation image detector capable of achieving both high-speed readout response and efficient signal charge extraction. First conductive layer that is transparent to the radiation of the light or the light emitted by excitation of the radiation (hereinafter referred to as recording light), the recording photoconductive layer that exhibits conductivity by receiving the recording light, and the first conductive layer. A charge storage layer that acts as a substantially insulator for charges of the same polarity as the charge charged to the layer, and acts as a conductor for charges of the opposite polarity to the same polarity. The photoconductive layer for reading that exhibits conductivity when irradiated with the light, and the second conductive layer including the signal output linear wiring that is transparent to the read light are laminated in this order, and image information is obtained. Latent image charge (electrostatic latent image) It proposes a detector that accumulated in the charge accumulation layer.

  In Patent Document 2 and Patent Document 3, in particular, the wiring of the second conductive layer is a stripe wiring composed of a signal output linear wiring that is transmissive to a large number of reading lights, and charge accumulation. Detection in which a large number of auxiliary linear wirings for outputting an electric signal of a level corresponding to the amount of latent image charge accumulated in the layer are provided alternately and parallel to the signal output linear wiring A vessel is proposed.

As described above, by arranging the sub stripe wiring composed of a large number of auxiliary line wirings as the second conductive layer, a new capacitor is formed between the charge storage layer and the sub stripe wiring, and the recording light is used. Transport charges having a polarity opposite to that of the latent image charge accumulated in the charge accumulation layer can be charged also to the sub-stripe wiring by charge rearrangement at the time of reading. Thereby, the amount of the transport charge distributed to the capacitor formed between the stripe wiring and the charge storage layer via the reading photoconductive layer is relatively smaller than that in the case where the sub stripe wiring is not provided. As a result, it is possible to increase the amount of signal charge that can be taken out from the detector to improve the reading efficiency, and at the same time, it is possible to achieve both high-speed readout response and efficient signal charge extraction. It is like that.
JP 2000-105297 A JP 2000-284056 A JP 2001-349947 A

  The photoconductive layer of the radiation image detector is formed on a substrate having a charge collecting electrode formed in a separate process by vacuum evaporation or the like in which the photoconductive layer material is heated and evaporated in a vacuum. There is an opportunity for dust to adhere to the substrate surface in each process such as the manufacturing process of the substrate, the transport of the substrate, and the setting of the substrate to a vapor deposition apparatus for vapor deposition. If vapor deposition is performed with this dust attached, this causes a problem on the image and causes a problem. In particular, when the photoconductive layer is made of amorphous selenium (a-Se) as a main component, crystalline selenium may be generated due to dust, bumping, etc. . In the radiographic image detector, an electric field is applied to the photoconductive layer at the time of recording or the like. However, when an electric field is applied to the radiographic image detector in which defects on the image are generated, the conductivity differs between the crystallized part and the amorphous part. In addition, the electric field concentration near the crystallized portion occurs due to the difference in dielectric constant between dust and selenium. Due to the sudden charge injection generated from the crystalline selenium, defects on the image tend to expand due to excessive accumulation or excessive flow of charges in the radiation image detector.

  Furthermore, this electric field concentration causes heat generation to concentrate the current in the region, and causes crystallization of the surrounding a-Se, so that an electric field is formed in the photoconductive layer with the use of the radiation image detector. It has been found that the defect range is gradually expanded by expanding the crystallization part by repeating the above.

  In other words, the crystalline selenium generated from the beginning of dust, bumps, etc., gradually becomes larger by repeatedly recording and reading the radiation image, and this enlargement also enlarges the defects on the image. It is a problem.

  In view of the above circumstances, the present invention provides a radiographic image detector comprising a photoconductive layer that generates charges when irradiated with recording light, and a plurality of wirings for applying a voltage to the photoconductive layer. The repair method of the radiological image detector capable of suppressing the expansion of the defect on the image due to the expansion of the crystal type selenium as described above when the defect on the image occurs, and the radiological image detection performed by the repair An image processing method for an image signal output from a detector, a radiation image detector that has been repaired when an image defect occurs, and an image processing device for an image signal output from the repaired radiation image detector The purpose is to do.

  A repair method for a radiological image detector according to the present invention includes a photoconductive layer that generates charges when irradiated with recording light, and a plurality of wirings for applying a voltage to the photoconductive layer. An extraction portion that extends to a predetermined connection position with an external connection terminal is formed in a region that does not overlap with the conductive layer, and a radiation image detector that sends out a plurality of pixel data based on the arrangement of wirings in advance. In the method, the wiring corresponding to the detected defect on the image is cut at the extraction portion.

  An image processing method according to the present invention is an image processing method for generating an image signal based on a signal output from a radiation image detector repaired by the repair method described above, and a pixel corresponding to a cut wiring In this method, correction processing is performed on data.

  The radiation image detector according to the present invention includes a photoconductive layer that generates an electric charge when irradiated with recording light, and a plurality of wirings for applying a voltage to the photoconductive layer. A radiation image detector in which an extraction portion extending to a predetermined connection position with an external connection terminal is formed in a region that does not overlap with a layer, and a plurality of pixel data is sent out based on an arrangement of wirings, and is detected in advance The wiring corresponding to the defect on the printed image is cut at the extraction portion.

  Furthermore, an image processing apparatus according to the present invention is an image processing apparatus that generates an image signal based on a signal output from the radiation image detector, and performs a correction process on pixel data corresponding to the cut wiring. It is a thing characterized by performing.

  Usually, in the radiation image detector, pixel data is transmitted so as to form a two-dimensional image. However, in the present invention, for example, a plurality of pixel data are transmitted so as to form a one-dimensional image. Any pixel can be applied as long as the pixel data is transmitted.

  Here, the method for detecting defects on the image is not particularly limited. For example, the image detection is performed for uniform exposure, and the brightness is locally different from other portions in the image obtained by this. Any method may be used such as a method of regarding a point as a defect on an image.

  In addition, correction processing corresponds to processing that prevents pixels corresponding to the cut wiring (pixel array in the case of a two-dimensional detector) from being noticeable compared to other normal pixels, or corresponds to the cut wiring It means a process of forming an image by removing the pixels (pixel columns).

  In addition, the process of making the abnormal pixels (pixel rows) inconspicuous is not particularly limited, and in a one-dimensional pixel radiographic image detector, for example, an average value of two pixels adjacent to the abnormal pixels is taken. In the radiation image detector for pixels, for example, any method may be used such as taking an average value of two pixels adjacent to each other in the abnormal pixel column in a direction orthogonal to the direction in which the abnormal pixel column extends.

  In the above, the “image detector” is a detector that detects recording light carrying image information of a subject, for example, radiation, and outputs an image signal representing a radiation image related to the subject, and directly or once receives incident radiation. An image signal representing a radiographic image related to a subject can be obtained by converting the light into light and then converting it into electric charge and outputting the electric charge to the outside.

  There are various types of image detectors. For example, from the aspect of the charge generation process that converts radiation into electric charge, the fluorescence emitted from the phosphor when irradiated with radiation is detected by the photoelectric conversion element. The photo-conversion radiation image detector that converts the signal charge obtained in this way into an image signal (electrical signal) and outputs it, or the signal charge generated in the radiation conductor when irradiated with radiation is converted into an electrical signal. From the aspect of the charge conversion process that reads out the external charge radiation image detector or the like, or the charge readout process that reads out the charge to the outside, the TFT readout system that scans and reads out the TFT (thin film transistor) connected to the power storage unit Or a light reading method in which reading light (electromagnetic wave for reading) is irradiated to the detector to read out, or a combination of the direct conversion method and the light reading method. Some like the improved direct conversion type which is proposed in the Patent Document 1 and Patent Document 2 by human.

  According to the radiological image detector repair method and the radiographic image detector of the present invention, a photoconductive layer that generates charges when irradiated with recording light, and a plurality of wirings for applying a voltage to the photoconductive layer In the radiation image detector that sends out a plurality of pixel data based on the arrangement of the wiring, the wiring forms an extraction portion that extends to a predetermined connection position with the external connection terminal in a region that does not overlap the photoconductive layer In addition, by cutting the wiring corresponding to the defect on the image detected in advance at the extraction part, even if the electric field formation is repeated in the photoconductive layer with the use of the radiation image detector, the photoconductive Since the electric field is not formed in the portion of the layer corresponding to the defect on the image (for example, in the case where amorphous selenium is used for the photoconductive layer), the enlargement of the defect portion is prevented. It can be.

  In addition, according to the image processing method and the image processing apparatus of the present invention, the image output from the radiation image detector having a defect on the image is obtained by performing correction processing on the pixel data corresponding to the cut wiring. Even with a signal, the image quality can be improved.

  As described above, by cutting the wiring corresponding to the defect on the image, one line corresponding to this wiring becomes a defect on the image. Compared with a case where the dimension is expanded over a wide range, the defect of one line can be corrected more easily and accurately. Therefore, the present invention is applied to a radiological image detector having a defect. By applying it, it is possible to prevent the deterioration of image quality over time.

  Hereinafter, a preferred embodiment of an image pickup apparatus of the present invention will be described with reference to the drawings. FIG. 1 is a top view showing a schematic configuration of a radiation image detector according to a first embodiment of the present invention, FIG. 2 is a sectional view taken along line II-II in FIG. 1, and FIG. 3 is a second view of the radiation image detector. It is a top view which shows the structure of this conductive layer.

  The radiation image detector 1 includes a first conductive layer 11 that transmits radiation carrying a radiographic image of a subject, and a photoconductive layer for recording that generates charges when irradiated with radiation transmitted through the first conductive layer 11. 12. A charge storage layer 13 which acts as an insulator for the latent image charge generated in the recording photoconductive layer 12 and acts as a conductor for transport charge having a polarity opposite to that of the latent image charge. A reading photoconductive layer 14 that generates an electric charge when irradiated with light and a second conductive layer 15 that transmits the reading light are laminated on a glass substrate 20 in this order. The latent image charge generated in the recording photoconductive layer 12 is stored in the charge storage layer 13. The glass substrate 20 serving as a support member is formed of a transparent and rigid glass, for example, soda lime glass with a thickness of 1.8 mm.

The first conductive layer 11 may be any material that can transmit radiation. For example, Nesa film (SnO ₂ ), ITO (Indium Tin Oxide), IDIXO (Idemitsu Indium X- metal Oxide (Idemitsu Kosan Co., Ltd.) can be used with a thickness of 50 to 200 nm, and Al or Au with a thickness of 100 nm can also be used.

  As shown in FIG. 3, the second conductive layer 15 includes a large number of signal output linear wires 15a and a large number of common linear wires 15b in a region where the recording photoconductive layer 12, the read photoconductive layer 14 and the like overlap. Are alternately arranged in parallel. The width in the direction orthogonal to the longitudinal direction of each linear wiring is, for example, 10 μm for the signal output linear wiring 15 a and 20 μm for the common linear wiring 15 b. The signal output linear wiring 15a and the common linear wiring 15b are made of a material such as IZO (Indium Zinc Oxide) or ITO (Indium Tin Oxide) that is transparent to the reading light irradiated from the glass substrate 20 side. It is formed in a flat line shape with a thickness of 0.2 μm. The common line wirings 15b are electrically connected to each other in a region that does not overlap with the recording photoconductive layer 12, the reading photoconductive layer 14, and the like, and are configured to have a common potential.

  A color filter 15c that transmits only light of a predetermined wavelength is formed on the glass substrate 20 side of the common line wiring 15b, and a transparent organic insulating layer is formed between the common line wiring 15b and the color filter 15c. Has been. The color filter 15c is formed with a thickness of 1.2 μm using a photosensitive resist in which a pigment is dispersed, for example, a red resist used for a color filter of an LCD. Further, in order to eliminate the step due to the color filter layer, a transparent organic insulating layer such as PMMA (methacrylic resin) is formed with a thickness of, for example, 1.8 μm.

  The recording photoconductive layer 12 only needs to generate a charge when irradiated with radiation, and is excellent in that it has a relatively high quantum efficiency with respect to radiation and a high dark resistance. It is preferable to use a material mainly composed of Se. In the present application, a 200-μm thick a-Se is used as the recording photoconductive layer 12.

  The charge storage layer 13 may be a film that is insulative with respect to the polar charge to be stored, such as an acrylic organic resin, polyimide, BCB, PVA, acrylic, polyethylene, polycarbonate, polyetherimide, or a polymer such as As2S3, It is composed of sulfides such as Sb2S3 and ZnS, oxides and fluorides. Furthermore, it is more preferable that it is insulative with respect to the charge of the polarity to be accumulated and that it is conductive with respect to the charge of the opposite polarity, and the product of mobility × life is 3 digits or more depending on the polarity of the charge Substances with differences are preferred.

Preferred compounds include the following.

・ As2Se3
・ As2Se3 doped with Cl, Br, I from 500 ppm to 20000 ppm ・ As2Se3 (SexTe1-x) 3 (0.5 <x <1) with Se substituted to about 50% with Te
・ As2Se3 with Se replaced to about 50% ・ As2Se3 with As concentration changed by about ± 15% ・ Amorphous Se-Te system with Te of 5-30 wt% Such chalcogenide elements In the case of using a substance including the charge storage layer, the thickness of the charge storage layer is preferably 0.4 μm or more and 3.0 μm or less, more preferably 0.5 μm or more and 2.0 μm or less. Such a charge storage layer may be formed by a single film formation or may be laminated in a plurality of times.

  As a preferable charge storage layer using an organic film, a compound obtained by doping a charge transport agent with a polymer such as an acrylic organic resin, polyimide, BCB, PVA, acrylic, polyethylene, polycarbonate, polyetherimide, or the like is preferably used. Preferred charge transfer agents include tris (8-quinolinolato) aluminum (Alq3), N, N-diphenyl-N, N-di (m-tolyl) benzidine (TPD), polyparaphenylene vinylene (PPV), polyalkylthiophene. , Polyvinylcarbazole (PVK), triphenylene (TNF), metal phthalocyanine, 4- (dicyanomethylene) -2-methyl-6- (p-dimethylaminostyryl) -4H-pyran (DCM), liquid crystal molecule, hexapentyloxytriphenylene And a molecule selected from the group consisting of a discotic liquid crystal molecule having a central core containing a π-conjugated condensed ring or a transition metal, a carbon nanotube, and fullerene. The doping amount is set between 0.1 and 50 wt%.

  The reading photoconductive layer 14 may be any material that exhibits conductivity when irradiated with reading light. For example, a-Se, Se-Te, Se-As-Te, metal-free phthalocyanine, metal phthalocyanine, A photoconductive substance mainly composed of at least one of MgPc (Magnesium phtalocyanine), VoPc (phase II of Vanadyl phthalocyanine), CuPc (Cupper phtalocyanine) and the like is preferable. In the present application, 10 μm thick a-Se is used as the reading photoconductive layer 14.

  The layer configuration of the radiation image detector 1 is not limited to the layer configuration as described above, and may include other layers, and the material of each layer may have the same function as that of each layer. For example, materials other than those described above may be used.

  The current detection unit 30 includes a plurality of TCP (Tape Carrier Packages) in which signal detection ICs (charge amplifier ICs) 31 are mounted on a flexible substrate 32. As shown in FIG. 1 and FIG. The end is connected to the linear wiring 15 a and the common linear wiring 15 b of the radiation image detector 1 on the glass substrate 20, and the other end of the TCP is connected to the image processing substrate 33.

  The linear wiring 15a and the common linear wiring 15b are formed with an extraction portion extending to a predetermined connection position with the TCP in a region that does not overlap the recording photoconductive layer 12, the reading photoconductive layer 14, or the like. Further, the extraction part is provided with a cutting area A in which each linear wiring can be individually cut in an area that does not overlap with the TCP.

  FIG. 3 shows an aspect in which five wires are connected to one TCP in order to easily show how the wires and TCP are connected. However, in an actual radiation image detector, FIG. In one signal detection IC, 256 charge amplifiers 31 are integrated, and each linear wiring 15a is connected to the charge amplifier 31 by a flexible substrate 32.

  The image processing board 33 includes an A / D converter (not shown) or the like for converting an analog signal output from each linear wiring 15a and detected by the signal detection IC 31 into a digital signal (image signal).

  Next, the operation of the radiation image detector 1 will be described.

  First, an electric field is formed between the first conductive layer 11 and the second conductive layer 15. In the present embodiment, a high voltage power supply (not shown) is connected between the first conductive layer 11 and the signal output line wiring 15a and common line wiring 15b, and a bias voltage is applied between them. When the recording photoconductive layer 12 is irradiated with radiation carrying image information in this state, positive and negative charges are generated in the recording photoconductive layer 12, and the negative charges are formed by applying the voltage. The electric field distribution is concentrated on each linear wiring of the second conductive layer 15 and accumulated as a latent image charge in the charge accumulation layer 13. The amount of latent image charge is substantially proportional to the amount of irradiation radiation, and this amount of latent image charge indicates a radiation image. On the other hand, the positive charges generated in the recording photoconductive layer 12 are attracted to the first conductive layer 11 and are combined with the negative charges injected from the voltage source and disappear.

  Next, when the radiation image recorded in the radiation image detector 1 as described above is read, signal output is performed by linear reading light extending in a direction orthogonal to the extending direction of the signal output linear wiring 15a. By scanning the entire surface of the radiation image detector 1 along the longitudinal direction of the linear wiring 15a, positive and negative charge pairs are generated in the reading photoconductive layer 14 corresponding to the scanning position of the reading light. The positive charge generated in the photoconductive layer 14 is attracted to the latent image charge of the charge storage layer 13 and is recombined with the latent image charge in the charge storage layer 13 and disappears, while the negative charge generated in the reading photoconductive layer 14 is lost. Is recombined with the positive charge of the signal output linear wiring 15a and disappears. An image signal based on the latent image charge generated corresponding to each pixel at the time of reading is output to the TCP and detected by the charge amplifier 31, whereby the radiation image carried by the latent image charge can be read.

  When the above-described radiation image detector 1 detects a defect on an image, uniform radiation exposure is performed on the entire radiation image detector 1 and a defect is detected based on the image obtained as a result.

  FIG. 4A shows an example of an image obtained by defect detection. Note that FIG. 4A shows a 6 × 6 pixel image. In FIG. 3, only six signal output linear wirings 15a are shown for easy understanding of the arrangement of the respective linear wirings in FIG. 3, and 6 × 6 areas partitioned by dotted lines correspond to each pixel. It is because it shows. An image obtained from an actual radiation image detector has a large number of pixels (for example, 4300 × 4300 pixels). Note that, in FIGS. 4B to 4D described later, an image of 6 × 6 pixels is shown following FIG.

  When uniform radiation exposure is performed on the entire radiation image detector 1, an image having a uniform density should normally be obtained on the entire screen, but when there is a defect on the image, FIG. As shown in (A), the pixel corresponding to the defect is detected at a density different from the density of the pixel not corresponding to the surrounding defect. In the detection of this defect, since a portion showing a density extremely deviating from the density range that should be obtained by the above-described radiation exposure may be regarded as a defect, it can be automatically detected by software. Of course, the detection may be performed manually by the user. In FIG. 4A, the pixel C5 is defective.

  One of the main causes of such defects is dust or bumping that is trapped in the formation of a photoconductive layer (a recording photoconductive layer 12 or a read photoconductive layer 14) mainly composed of a-Se. There is crystalline selenium that is caused by the above. In the radiation image detector 1, an electric field is formed on the photoconductive layer at the time of recording or the like. Concentration of the electric field on the crystallized part occurs due to the difference in dielectric constant between dust and selenium. The sudden charge injection generated from the crystalline selenium as a starting point causes an image defect due to excessive charge accumulation or excessive flow in the radiation image detector 1.

  Furthermore, since this electric field concentration causes heat generation to concentrate the current in the region and causes crystallization to the surrounding a-Se, the photoconductivity is accompanied with the continuous use of the radiation image detector 1. It is found that the crystallization part is enlarged by repeating the formation of the electric field on the layer, and the defect range is expanded two-dimensionally around the original defective pixel C5 as shown in FIG. 4B. It was done.

  Therefore, in the present embodiment, the linear wiring corresponding to the defect on the image detected in advance is cut in the cutting area A, and an electric field is applied to the portion corresponding to the defect on the image of the photoconductive layer. Make it no longer formed.

  Specifically, since the position of the defective portion in the radiation image detector 1 can be uniquely estimated from the position of the defect on the image, the signal output linear wiring 15a corresponding to the position of the defective portion is formed in the cutting region A. Disconnect. That is, as shown in FIG. 3, since it is estimated that a defective portion D such as crystalline selenium exists at a position corresponding to the defective pixel C5, the signal output linear wiring 15a overlapping the defective portion D is cut. .

  As a method for cutting, any method such as laser repair for irradiating a laser beam to burn out the wiring may be used.

  As a result, as shown in FIG. 4C, the pixels corresponding to the cut signal output linear wiring 15a are defective in a line shape. However, the correction for such a line-shaped defect can be easily and accurately performed as compared with the correction for a defect that has been expanded two-dimensionally over a wide range.

  For the correction for the line-shaped defect, for example, a process may be performed in which an average value of the density of pixels around the defective pixel is regarded as the density of the defective pixel. Further, since the actual radiation image detector 1 has a very large number of pixel lines (for example, 4300 lines), the defect line is not displayed at all, and a process of connecting the upper and lower lines of this line may be performed. Of course, the present invention is not limited to the above processing, and any image processing method may be used.

  In the present embodiment, the image processing means (not shown) on the image processing substrate 33 performs a process such that the average value of the density around the defect on the image is regarded as the density of the defective part, thereby correcting the defective part. As shown in (D), a normal image can be acquired. Further, in this radiographic image detector 1, the signal output linear wiring 15 a corresponding to the position of the defective portion is cut, so that the formation of an electric field in the photoconductive layer is repeated with the use of the radiographic image detector 1. However, since the electric field is not formed in the defective portion D, the expansion of the defective portion D can be prevented.

  In the present embodiment, only the signal output linear wiring 15a corresponding to the defect on the image is cut, but the common linear wiring 15b corresponding to the defect may also be cut.

  Next, an image pickup apparatus according to a second embodiment of the present invention will be described. In the present embodiment, the radiation image detector is changed from the optical readout type to the TFT readout type as compared with the first embodiment. 5 is a top view showing a schematic configuration of the radiation image detector of the present embodiment, FIG. 6 is a sectional view taken along line VI-VI in FIG. 5, and FIG. 7 shows a configuration of the charge detection layer of the radiation image detector. It is a block diagram.

  In the radiation image detector 2 of the present embodiment, a charge detection layer 113 made of an a-Si TFT is formed on a glass substrate 120, and a photoconductive layer 112 that exhibits conductivity by generating charges when irradiated with X-rays. The conductive layer 111 is laminated in this order.

  As shown in FIG. 7, the charge detection layer 113 specifically has a structure in which charge storage capacitors P and TFT switches T are arranged in a matrix. The drain electrode of the TFT switch T and one electrode of the charge storage capacitor P are connected. The other electrode of the charge storage capacitor P is connected to the storage capacitor wiring Vs. A scan line Vg is connected to the gate electrode of the TFT switch T, and a data line Sig is connected to the source electrode.

  A control signal is supplied to the scan wiring Vg for on / off control of the TFT switch T connected to each scan wiring Vg. Further, the charge signal accumulated in the charge storage capacitor P connected to each data line Sig flows out to the data line Sig. The control signal is output from a gate driver described later. The scan wiring Vg and the data wiring Sig are provided orthogonal to each other.

  Further, as shown in FIGS. 5 and 7, a plurality of TCPs in which the signal detection ICs 131 are mounted on the flexible substrate 132 are arranged along the upper side of the square glass substrate 120, and one end portion of the TCP is The glass substrate 120 is connected to the data wiring Sig and the storage capacitor wiring Vs of the radiation image detector 2, and the other end of the TCP is connected to the image processing substrate 133.

  A plurality of TCPs each having a gate driver IC 134 mounted on a flexible substrate 135 are arranged along the right side of the rectangular glass substrate 120, and one end of the TCP is disposed on the glass substrate 120 on the radiation image detector 2. It is connected to the scan wiring Vg, and the other end of the TCP is connected to the control board 136.

  Next, the operation of the radiation image detector 2 will be described.

  First, an electric field is formed between the conductive layer 111 and the charge detection layer 113. In the present embodiment, a high voltage power supply (not shown) is connected between the conductive layer 111 and the storage capacitor wiring Vs, and a bias voltage is applied between the two. When X-rays are irradiated from above in FIG. 6 in this state, charge pairs are generated inside the photoconductive layer 112. Among the generated charge pairs, the positive charge is moved in the direction of the charge detection layer 113 by the electric field and is finally stored in the charge storage capacitor P. Since the photoconductive layer 112 generates different charge amounts according to the X-ray dose, charges corresponding to image information carried by the X-rays are accumulated in the charge storage capacitors P of the respective pixels. Thereafter, a signal for turning on the TFT switch T is sequentially applied via the scan wiring Vg, and the charge accumulated in each charge storage capacitor P is taken out via the data wiring Sig. Furthermore, image information can be read by detecting the charge amount of each pixel by the signal detection IC 131.

  Also in the radiation image detector 2 of the TFT readout method configured as described above, the defect on the image is detected as in the first embodiment, and if there is a defect, wiring corresponding to the defect is provided. The same effect as that of the first embodiment can be obtained by cutting and performing a correction process for the line-shaped defect caused by the cutting.

  In this embodiment, since a high voltage power supply is connected to the storage capacitor wiring Vs when the bias voltage is formed, if there is a defect, at least the storage capacitor wiring Vs corresponding to the defect is cut, Although an electric field can be prevented from being formed in the defective portion, the data wiring Sig corresponding to the defective pixel may be cut together.

  Since the wiring to be cut in the case of a TFT readout type radiographic image detector varies depending on the connection configuration of the TFT switch and the charge storage capacitor, when the TFT readout type radiographic image detector has a configuration other than the above, Needless to say, it is necessary to change the wiring to be cut as appropriate.

  As mentioned above, although preferable embodiment of this invention was described, this invention is not limited above. For example, the configuration of the radiation image detector is not limited to the direct conversion method, and an indirect conversion method using a scintillator may be used.

A top view showing a schematic configuration of a radiation image detector according to the first embodiment. II-II line sectional view in FIG. The top view which shows the structure of the 2nd conductive layer of the said radiographic image detector. FIG. 4A shows an example of an image obtained from the radiation image detector, FIG. 4B shows a state in which a defect is enlarged from the state shown in FIG. 4A, and FIG. The figure which shows the image at the time of cut | disconnecting the wiring corresponding to a defect, The figure which shows the image which correct | amended the defect on an image from the state of FIG.4 (C) The top view which shows schematic structure of the radiographic image detector of 2nd Embodiment VI-VI line sectional view in FIG. The block diagram which shows the structure of the electric charge detection layer of the said radiographic image detector

Explanation of symbols

DESCRIPTION OF SYMBOLS 1, 2 Radiation image detector 11 1st conductive layer 12 Photoconductive layer for recording 13 Charge storage layer 14 Photoconductive layer for reading 15 2nd conductive layer 20 Glass substrate 30 Current detection part 31 Signal detection IC
32 Flexible substrate 33 Image processing substrate 111 Conductive layer 112 Photoconductive layer 113 Charge detection layer 120 Glass substrate 131 Signal detection IC
132 Flexible substrate 133 Image processing substrate 134 Gate driver IC
135 Flexible board 136 Control board

Claims (4)

  A photoconductive layer that generates an electric charge when irradiated with recording light and a plurality of wirings for applying a voltage to the photoconductive layer, wherein the wiring is externally connected in a region that does not overlap the photoconductive layer. An extraction portion extending to a predetermined connection position with the terminal is formed, and a defect on the image detected in advance is detected with respect to the radiation image detector to which a plurality of pixel data is transmitted based on the arrangement of the wiring. A method of repairing a radiation image detector, wherein the corresponding wiring is cut at the extraction portion. An image processing method for generating an image signal based on a signal output from a radiation image detector repaired by the repair method according to claim 1,
An image processing method, wherein correction processing is performed on pixel data corresponding to the cut wiring. A photoconductive layer that generates an electric charge when irradiated with recording light and a plurality of wirings for applying a voltage to the photoconductive layer, wherein the wiring is externally connected in a region that does not overlap the photoconductive layer. A radiation image detector in which an extraction portion extending to a predetermined connection position with a terminal is formed, and a plurality of pixel data is sent out based on the arrangement of the wiring,
The radiation image detector, wherein the wiring corresponding to the defect on the image detected in advance is cut at the extraction portion. An image processing apparatus for generating an image signal based on a signal output from the radiation image detector according to claim 3,
An image processing apparatus that performs correction processing on pixel data corresponding to the cut wiring.

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