JP2001223334A - Method for manufacturing semiconductor device and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To commonly use materials of a resistance element and a capacity element of a semiconductor device and to facilitate manufacturing steps. SOLUTION: A dielectric film 33, a first resistor film 34 or a second resistor film 43, a dielectric film 42, and a first resistor film 41, are sequentially laminated on a semiconductor substrate 11 having a semiconductor element 12. Capacity elements 35, 46 are formed of a laminated film of the film 33, the film 34 or 43, the film 42 and the film 41. The resistor film of the laminated film is formed at the resistance element. Accordingly, the respective films can be commonly formed, and hence the manufacturing method can be commonly used to simplify the steps of manufacturing the semiconductor.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing method and a semiconductor device, and more particularly to a semiconductor device manufacturing method and a semiconductor device having a capacitance element and a resistance element.

[0002]

2. Description of the Related Art A general semiconductor device 10 is provided with a semiconductor substrate 11 of Si or the like as shown in FIG. Is formed.

The source electrode 13, the gate electrode 15 on which the gate oxide film 14 is attached, and the drain electrode 16 of the semiconductor element 12 are provided with wirings 17a, 17b and 17c. The wires 20a and 20b of the resistor film 19 to be an element or the wires 23a and 23b connected to the metal electrodes 22a and 22b attached to the dielectric film 21 to be a capacitor are connected in series or in parallel to control the output and the like. ing.

Incidentally, polycrystalline silicon or the like formed by chemical vapor deposition is used for the resistor film 19, and silicon nitride or the like formed by chemical vapor deposition is used for the dielectric film 21. Had been.

[0005] Therefore, since the material of the resistor film and the material of the dielectric film are different, the film forming method and the processing method thereof are also different.
Therefore, there is a problem that the manufacturing process of the semiconductor device including the resistor film and the dielectric film becomes two processes, and other operations such as cleaning of the substrate are added, and the process becomes complicated.

Accordingly, the present invention is to provide a method of manufacturing a semiconductor device in which materials such as a resistor film and a dielectric film are used in common, and a complicated manufacturing process such as film formation and processing is prevented. It is the purpose.

[0007]

According to the first and second aspects of the present invention, a dielectric film, a first resistive film or a second resistive film, a dielectric film, a first resistive film or a second resistive film is formed on an upper surface of a semiconductor substrate having a semiconductor element. Are laminated in this order, and a capacitive element is formed by a laminated film composed of the dielectric film, the first resistive film or the second resistive film, the dielectric film, and the first resistive film. Since the resistor film of the laminated film is formed on the resistance element, each film can be shared, and the manufacturing method can be shared, so that the semiconductor manufacturing process can be simplified.

According to a third aspect of the present invention, the dielectric film is made of a metal oxide containing tantalum or titanium as a main component formed by reactive sputtering, and the resistive film is made of reactive sputtering. Since it is made of a metal nitride containing tantalum or titanium as a main component formed by the method, the materials of the respective films can be made common and the manufacturing method can be made common, so that the semiconductor manufacturing process can be further simplified.

According to a seventh aspect of the present invention, there is provided a resistor film laminated on an upper surface of a semiconductor substrate having a semiconductor element, a dielectric film laminated on the upper surface of the resistor film, and a resistor film laminated on the upper surface of the dielectric film. Since each of the capacitors is formed by a body film, a capacitor element formed by a laminated film of these dielectric films and resistor films, and a resistor element formed by the resistor film, each film can be shared.

According to the ninth and tenth aspects of the present invention, the same kind of metal is used as the main composition of the dielectric film and the resistor film, and the oxide of the metal is used as the dielectric film and the nitride of the metal is used as the resistor film. Therefore, the material of the dielectric film and the material of the resistor film can be shared, so that the semiconductor manufacturing process can be greatly simplified.

Furthermore, by using tantalum or titanium as a metal having a main composition, these oxides can be used as a dielectric film,
The nitride becomes the resistor film.

[0012]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the method for manufacturing a semiconductor device and the semiconductor device according to the present invention will be described below.

First, a first embodiment of a semiconductor manufacturing method and a semiconductor device according to the present invention will be described with reference to FIGS.

The semiconductor device 30 of the present invention is basically similar to that of FIG.
Therefore, the same parts as those of the conventional semiconductor device 10 will be described with the same reference numerals.

As shown in FIG.
A substrate 11 made of Si or the like is provided, and a lower electrode 32 is formed on an upper surface thereof via an oxide film 18 for ensuring insulation.

As shown in FIG. 3, a tantalum oxide 33 is formed on the upper surface of the oxide film 18 including the lower electrode 32 by sputtering with tantalum as a target in an atmosphere in which argon and oxygen are introduced. It has become.

On the upper surface of the tantalum oxide 33, tantalum is directly used as a target, and the target is sputtered in an atmosphere in which argon and nitrogen are introduced.
Is formed to form a tantalum nitride 34 to be a resistor film.

The tantalum oxide 33 and the tantalum nitride 34 are patterned as shown in FIG. As shown in FIG. 5, a metal member is laminated on the upper surface of the right tantalum nitride 34 formed as described above to form an upper electrode 35, and these constitute a capacitive element 36.

The semiconductor element 12 and the tantalum oxide 33
In order to protect them electrically and mechanically on the upper part of the tantalum nitride 34 and the like, as shown in FIG.
An insulating film 37 having an opening 38 corresponding to 35 or the like is formed, and an electrode wiring 39 made of aluminum or the like is formed thereon.
a, 39b, 39c, 44a, 44b and 45a, 45b are formed and connected to each other to form the semiconductor device 30.

In the semiconductor device 30 formed in this manner, a tantalum nitride 34 serving as a resistor film of a resistance element and a tantalum oxide 33 serving as a dielectric film of a capacitor element 36 are each made of tantalum as a base material and argon is added thereto. Since oxygen and nitrogen are used, the material can be shared.

The tantalum nitride 34 serving as the resistor film of the resistor element and the tantalum oxide serving as the dielectric film of the capacitor element 36 are exchanged in the same atmosphere by replacing oxygen and nitrogen which are gases introduced during sputtering. Since it is formed, the manufacturing process can be simplified.

In addition, since the tantalum nitride 34 serving as a resistor film covers the tantalum oxide 33 serving as a dielectric film, the tantalum nitride 34 serves as a kind of barrier layer and the oxygen of the dielectric tantalum oxide 33 is converted into a semiconductor. The diffusion to the element 12 and the like is prevented.

Therefore, since the semiconductor element 12 is not deteriorated by oxygen, a high-quality semiconductor device can be manufactured very easily.

Next, a semiconductor manufacturing method and a semiconductor device according to a second embodiment of the present invention will be described with reference to FIGS.

The second embodiment is a further improvement of the first embodiment, and is basically similar to the method of manufacturing the semiconductor device 30 shown in the first embodiment shown in FIG. It is.

Therefore, the conductor device 40 according to the second embodiment of the present invention will be described by assigning the same reference numerals to the same portions as those of the semiconductor device 30 according to the first embodiment.

As shown in FIG.
A substrate 11 made of Si or the like is provided, and a lower electrode 32 is formed on an upper surface thereof via an oxide film 18. On the upper surface of the oxide film 31 including the lower electrode 32, as shown in FIG. 9, a tantalum target 41 is sputtered in an atmosphere of argon and nitrogen to form a tantalum nitride 41 serving as a first resistor film. Is formed.

On the upper surface of the tantalum nitride 41, tantalum is directly used as a target, and the target is sputtered in an atmosphere of argon and oxygen to form a tantalum oxide 42.

On the upper surface of the dielectric film 42, tantalum is used as a target, and the target is sputtered in an atmosphere of argon and nitrogen to form a tantalum nitride 43 serving as a second resistor film. ing.

The tantalum nitride 41, the tantalum oxide 42, and the tantalum nitride 43 are patterned as shown in FIG. The tantalum nitride 43 thus formed
As shown in FIG. 11, a metal member is laminated on the upper surface of the substrate to form an upper electrode 35, and these constitute a capacitive element.

The semiconductor element 12 and the tantalum nitride 4
1, an insulating film 37 having openings 38 corresponding to the electrodes 32, 35, etc., on the upper portions of the tantalum oxide 42, the tantalum nitride 43, etc., as shown in FIG. Are formed, and electrode wirings 39a, 39b, 39c, 44a, 44 made of aluminum or the like are formed thereon.
The semiconductor devices 40 and 45a, 45b are formed and connected to each other to form the semiconductor device 40 as shown in FIG.

The semiconductor device 4 manufactured as described above
0 can be manufactured by almost the same process using almost the same material as in the first embodiment.

In addition, since the tantalum oxide 42 of the capacitor 46 is surrounded by the upper and lower tantalum nitrides 41 and 43, it functions as a barrier layer and the tantalum oxide 42
Is almost completely prevented from diffusing oxygen into the semiconductor element 12 and the like.

Therefore, a semiconductor device 40 in which the semiconductor element 12 is not deteriorated by oxygen can be manufactured. Therefore, the high quality semiconductor device 40 can be manufactured by a simple process using a common material.

In each of the embodiments of the present invention, a dielectric film of tantalum oxide and a resistor film of tantalum nitride are formed by sputtering tantalum, but a dielectric film of titanium oxide and titanium nitride are formed by using titanium. A resistor film of an object may be used.

Furthermore, in this embodiment, the metal oxide film is formed after the metal nitride film is formed, but the surface of the metal nitride is oxidized after forming the metal nitride film to form an upper layer. A metal nitride film having a metal oxide film may be obtained.

Further, as the semiconductor device of this embodiment, MOSF
Although an ET type transistor has been described as an example, a bipolar transistor or another semiconductor element may be used. Further, in this embodiment, the semiconductor element, the capacitor element, the resistive film serving as the resistive element and the like are formed in the same layer. However, the capacitive element, the resistive film serving as the resistive element and the like may be formed above the semiconductor element.

Further, the resistive film serving as the capacitive element and the resistive element according to the present invention is not limited to the above-described embodiment, but may be applied to various types of semiconductor devices without departing from the scope of the invention.

Further, if the resistance value of the resistor film of the present embodiment is a low resistance value suitable for the electrode of the capacitor, this resistor film may be used as it is as the electrode of the capacitor.

Further, in this embodiment, an example is shown in which a resistor element and a capacitor element are formed using a resistor film and a dielectric film. However, even if an interlayer film is inserted between these films to improve the adhesive force or the like. Good.

[0041]

According to the present invention, a dielectric film, a first resistor film or a second resistor film, a dielectric film, and a first resistor film are sequentially formed on an upper surface of a semiconductor substrate having a semiconductor element. The capacitor element is formed by laminating the dielectric film, the first resistor film or the second resistor film, the dielectric film, and the first resistor film to form a capacitive element. Is formed on the resistance element, the respective films can be shared, and the manufacturing method can be shared, so that the semiconductor manufacturing process can be simplified.

[Brief description of the drawings]

FIG. 1 is an explanatory view showing a cross section of a final step of a semiconductor device manufacturing method and a semiconductor device according to a first embodiment of the present invention;

FIG. 2 is an explanatory view showing a first step of the semiconductor device manufacturing method and the semiconductor device according to the first embodiment of the present invention in cross section;

FIG. 3 is an explanatory view showing a cross section of a second step of the semiconductor device manufacturing method and the first embodiment of the semiconductor device of the present invention.

FIG. 4 is an explanatory view showing in cross section a third step of the semiconductor device manufacturing method and the semiconductor device according to the first embodiment of the present invention;

FIG. 5 is an explanatory view showing, in cross section, a fourth step of the semiconductor device manufacturing method and the semiconductor device according to the first embodiment of the present invention;

FIG. 6 is an explanatory view showing, in cross section, a fifth step of the semiconductor device manufacturing method and the semiconductor device according to the first embodiment of the present invention;

FIG. 7 is an explanatory view showing a cross section of a final step of the semiconductor device manufacturing method and the second embodiment of the semiconductor device according to the present invention;

FIG. 8 is an explanatory view showing a first step of the semiconductor device manufacturing method and the semiconductor device according to the second embodiment of the present invention in cross section;

FIG. 9 is an explanatory view showing, in cross section, a second step of the semiconductor device manufacturing method and the second embodiment of the semiconductor device according to the present invention;

FIG. 10 is an explanatory view showing, in cross section, a third step of the semiconductor device manufacturing method and the semiconductor device according to the second embodiment of the present invention;

FIG. 11 is an explanatory view showing a cross section of a fourth step of the semiconductor device manufacturing method and the second embodiment of the semiconductor device according to the present invention;

FIG. 12 is an explanatory view showing, in cross section, a fifth step of the semiconductor device manufacturing method and the second embodiment of the semiconductor device of the present invention;

FIG. 13 is an explanatory view showing a cross section of a conventional semiconductor device manufacturing method and a final step of the semiconductor device.

[Explanation of symbols]

 10, 30, 40 Semiconductor device 11 Semiconductor substrate 12 Semiconductor element 19, 34, 41, 43 Resistor film 21, 33, 42 Dielectric film 36, 46 Capacitance element 37 Insulating film

 ──────────────────────────────────────────────────の Continued on the front page F term (reference) 5F038 AC07 AC09 AC15 AR06 AR07 AR18 EZ14 EZ20 5F048 AA09 AC10

Claims (10)

[Claims] A dielectric film and a first resistor film are sequentially laminated on an upper surface of a semiconductor substrate having a semiconductor device, and a laminated film including the dielectric film and the first resistor film is formed as a capacitor. And forming a resistor film as a resistance element. 2. A second resistive film, a dielectric film, and a first resistive film are sequentially stacked on an upper surface of a semiconductor substrate having a semiconductor element, and the second resistive film, the dielectric film, and the first resistive film are stacked. A method of manufacturing a semiconductor device, comprising: forming a laminated film made of the resistor film as a capacitance element and forming a first resistor film formed on the dielectric film as a resistance element. 3. The method according to claim 1, wherein the dielectric film is formed of a metal oxide, and the first and second resistor films are formed of a metal nitride. . 4. The method according to claim 3, wherein the main composition of the metal oxide and the metal nitride is tantalum or titanium. 5. The method according to claim 3, wherein the metal oxide is formed by a reactive sputtering method into which oxygen is introduced, and the metal nitride is formed by a reactive sputtering method into which nitrogen is introduced. Semiconductor device manufacturing method. 6. The method according to claim 5, wherein the metal oxide or the metal nitride is formed by changing the composition of the gas to be introduced. 7. A dielectric film laminated on an upper surface of a semiconductor substrate having a semiconductor element, a first resistor film laminated on an upper surface of the dielectric film, these dielectric films, a first resistor film A semiconductor device, comprising: a capacitance element formed by a laminated film of: and a resistance element formed by the resistor film. 8. A second resistor film laminated on an upper surface of a semiconductor substrate having a semiconductor element, a dielectric film laminated on an upper surface of the resistor film, and a first film laminated on an upper surface of the dielectric film. A resistive element, a capacitive element formed by a laminated film of the second resistive film, the dielectric film, and the first resistive film; and a resistive element formed by the first resistive film. A semiconductor device characterized by the above-mentioned. 9. The method according to claim 1, wherein the dielectric film is formed of a metal oxide.
9. The semiconductor device according to claim 7, wherein said second resistor film is made of metal nitride. 10. The semiconductor device according to claim 9, wherein the main composition of the metal oxide and the metal nitride is tantalum or titanium.