JP2001222948A - Method of forming thick film pattern of plasma display circuit board - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve productivity and yield and to acquire excellent accuracy of line width. SOLUTION: A pattern forming material 6 for forming barrier patterns is applied with a prescribed film thickness and dried on a plasma display circuit board 1 on which electrode patterns 5 are formed, and masks 7 for the sand- blast are formed over the pattern forming material so that each mask is located between the electrode patterns 5. After that, the sand-blast processing is performed by using the masks 7 for the sand-blast with the surface of the electrode patterns 5 being protected, then the baking is performed finally to obtain a target barrier pattern 9. A pattern of at least 100 μm is obtained by one operation. Since the outline of the patterns of the thick film if formed by the sand-blast processing by using of the masks, the accuracy of line width is improved. Further, since the surface of the electrodes is protected during the sand-blast processing for forming a barrier, the electrodes will not be damaged.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a thick film pattern on a plasma display substrate for forming a barrier pattern on a plasma display substrate having an electrode pattern in a process of manufacturing a plasma display panel.

[0002]

2. Description of the Related Art Conventionally, as a method of forming a thick film pattern on a plasma display substrate, a paste for a conductor or an insulator is printed in a pattern on a glass or ceramic substrate by screen printing, and then the paste is dried. There is known a method of forming a thick film pattern by repeating a firing step. Recently, forming a thick film pattern with a ceramic material on a substrate such as glass has been performed in various fields. In this case, too, the ceramic material is dispersed in a binder to form a paste. In the same manner as described above, a thick film pattern is formed by repeating the steps of performing overprinting by screen printing, followed by drying and firing.

[0003]

In a conventional method of forming a thick film pattern on a plasma display substrate by screen printing, as described above, overprinting is performed by a plurality of times of screen printing to obtain a predetermined thickness. However, this method requires 5 to 10 overprints in order to obtain a thick film of, for example, 50 to 100 μm, each time requiring a drying step, and as a result, the productivity is extremely poor and the yield is low. There was a problem that it reduced. Further, there is a problem that the line width accuracy of the pattern is impaired due to the viscosity of the paste, thixotropy and the like.

The present invention has been made in order to solve such problems of the prior art, and a plasma display capable of improving productivity, improving yield, and obtaining good line width accuracy. It is an object of the present invention to provide a method for forming a thick film pattern on a substrate.

[0005]

In order to achieve the above object, a method for forming a thick film pattern of a plasma display substrate according to the present invention comprises a pattern forming material for forming a barrier pattern on a plasma display substrate having an electrode pattern formed thereon. Is applied to a predetermined thickness and dried, and a sandblasting mask is formed thereon so as to be located between the electrode patterns. Then, while the surface of the electrode pattern is protected, the sandblasting is performed through the sandblasting mask. The gist of the present invention is to obtain a target barrier pattern by performing baking at the end of the treatment.

In the above-described method for forming a thick film pattern, the pattern forming material for forming the barrier
It is preferable to apply the coating in a thickness of 0 μm or more.

[0007]

According to the method for forming a thick film pattern having the above-described structure, after a pattern forming material is applied on a substrate to a predetermined thickness, it is unnecessary by sandblasting through a mask while protecting the surface of the electrode pattern. By removing the portions, a pattern having a finally required thickness is formed in a single operation.

[0008]

An embodiment will be described with reference to the drawings.

1 and 2 are process diagrams showing an embodiment of a method for forming a thick film pattern on a plasma display substrate according to the present invention. FIG. 1 shows a process for forming an electrode pattern, and FIG. The step of forming a barrier pattern therebetween is shown.

In this embodiment, as shown below, a pattern was formed by screen printing using silicon rubber as a printing paste for forming a sandblasting mask. However, this selection does not limit the present invention, and an appropriate print paste may be appropriately selected according to the target pattern size, the type of the pattern forming material, the suitability as a mask for sandblasting, the printability, and the like. Things. For example, polymer materials such as urethane and soft vinyl chloride having sandblast resistance can be considered. As a feature of these mask layers, they have a cushioning property so as to absorb the collision of the abrasive during the blast processing.

Hereinafter, each step shown in FIG. 1 will be described step by step.

First, as shown in FIG. 1A, an electrode paste 2 which is a pattern forming material is applied on a glass substrate 1 by a flat plate coating method (blade coating method) to a thickness of 20 μm. . In this embodiment, “Ni paste No. 953” manufactured by DuPont was used as the electrode paste 2.
5 "was used. After completion of the application, 100 to 160 of the substrate 1 is removed to remove the organic solvent in the electrode paste 2.
After drying at ℃, it was subjected to the next step.

The above-mentioned flat plate coating method is carried out by using a flat plate coater C as shown in FIG. 3, for example, and the blade 10 is moved by the thin film gauge 11 while maintaining a constant interval with respect to the substrate 1. This is a method for forming a uniform coating film using the coating liquid 12. The flat plate coater C is described in detail in JP-A-63-171666.

Next, as shown in (b), a sand blast mask 3 matching the electrode pattern was formed by a screen printing method using a printing paste. In this embodiment, “T” manufactured by Toshiba Silicone Co., Ltd. is used as the printing paste.
“SE-3360 (A)” = 150 parts, “TSE-336”
0 (B) ”= 100 copies, Sumitomo 3M“ F-170C ”
(Fluorine-based surfactant) = 0.6 part was used. The electrode pattern has a line width of 100 μm.
m, a line shape having a pitch of 200 μm, and the thickness of the mask 3 was set to 20 μm.

Thereafter, after a drying step, an unnecessary portion was removed by sandblasting 4 as shown in FIG. Here, brown fused alumina # 8 was used as an abrasive.
By performing sandblasting at a jetting pressure of 1 kg / cm ² using a jet pressure of 00, a line width of 100 μm and a pitch of 200
A pattern of the electrode 5 having a height of 20 μm was obtained.

Next, the steps shown in FIG. 3 will be described step by step.

First, as shown in FIG. 1A, a ceramic material 6 as a barrier pattern forming material is applied on the pattern obtained in the step of FIG. 1 by the above-mentioned flat plate coating method, and its thickness is reduced. The thickness was 200 μm. And 10
Drying was performed at 0 to 160 ° C., and the product was subjected to the next step.

Next, in the step shown in FIG. 2B, the same material as that of the mask 3 is used for the screen printing to form a sand blast mask layer 7 having a line pattern of 100 μm and a pitch of 200 μm.
Was patterned. The pattern of the mask layer 7 was aligned so as to be located between the electrode patterns.

Then, in the step (c) of removing unnecessary portions by sandblasting 8, brown fused alumina # 800 is used as an abrasive and sandblasting is performed at an ejection pressure of 3 kg / cm ² to obtain a line width of 100 μm and a pitch of 100 μm. A 200 μm, 200 μm height barrier 9 pattern of the ceramic material was obtained. At this time, the mask 3 remains above the electrode 5 and protects the surface of the electrode 5, so that the electrode 5 is not damaged.

Then, after the sandblast masks 3 and 7 are peeled off by the chemical treatment, in the subsequent step (d),
The firing was performed under the conditions of a peak temperature of 585 ° C. and a holding time of 10 to 20 minutes, so that the electrode 5 and the barrier 9 were bonded on the glass substrate 1.

Through the above steps, a thick film pattern of the electrode 5 having a line width of 100 μm, a pitch of 200 μm and a height of 18 μm, a line width of 100 μm, a pitch of 200 μm and a height of 180 μm
The thick film pattern of the barrier 9 was obtained.

In the above embodiment, screen printing is used to form a sandblast mask. However, this is not a limitation of the present invention. For example, intaglio offset printing may be used.

[0023]

Since the present invention is configured as described above, the following effects can be obtained.

Since a thick film pattern having a height of 100 μm or more can be obtained by one operation, the processing time is shortened, the yield is improved, and the position is improved as compared with the conventional laminating method of forming a thick film pattern by screen printing. Operation such as alignment is also 1
Since the number of times is sufficient, the process can be simplified.

Further, since the contour of the thick film pattern is formed by sandblasting through a mask, the line width freshness is better than that of the conventional one, and it is possible to cope with a high definition pattern and an increase in the size of the substrate. Becomes

Further, since the surface of the electrode pattern is protected during the sandblasting process for forming the barrier,
The electrodes do not need to be damaged.

[Brief description of the drawings]

FIG. 1 is a process diagram of an electrode pattern formation which is an embodiment of a method of forming a thick film pattern of a plasma display substrate according to the present invention.

FIG. 2 is a process chart of forming a barrier pattern.

FIG. 3 is a perspective view showing an example of a flat coater.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 2 Electrode paste (pattern forming material) 3 Sandblast mask 4 Sandblast 5 Electrode 6 Ceramic material (pattern forming material) 7 Sandblast mask 8 Sandblast 9 Barrier C Flat plate coater

Claims (2)

[Claims] 1. A pattern forming material for forming a barrier pattern is applied to a predetermined thickness on a plasma display substrate on which an electrode pattern is formed and dried, and a sandblasting mask is positioned between the electrode patterns on the substrate. After performing the above, after performing sandblasting through a sandblasting mask while protecting the surface of the electrode pattern, finally performing baking to obtain a desired barrier pattern. A method for forming a thick film pattern on a plasma display substrate. 2. The method according to claim 1, wherein a pattern forming material for forming a barrier pattern is applied to a thickness of 100 μm or more.