JP2001196477A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JP2001196477A
JP2001196477A JP2000006706A JP2000006706A JP2001196477A JP 2001196477 A JP2001196477 A JP 2001196477A JP 2000006706 A JP2000006706 A JP 2000006706A JP 2000006706 A JP2000006706 A JP 2000006706A JP 2001196477 A JP2001196477 A JP 2001196477A
Authority
JP
Japan
Prior art keywords
contact
film
contact portion
bit line
contact hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000006706A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001196477A5 (enExample
Inventor
Akira Aida
晃 合田
Seiichi Aritome
誠一 有留
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000006706A priority Critical patent/JP2001196477A/ja
Priority to US09/726,582 priority patent/US6611010B2/en
Publication of JP2001196477A publication Critical patent/JP2001196477A/ja
Publication of JP2001196477A5 publication Critical patent/JP2001196477A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2000006706A 1999-12-03 2000-01-14 半導体装置 Pending JP2001196477A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000006706A JP2001196477A (ja) 2000-01-14 2000-01-14 半導体装置
US09/726,582 US6611010B2 (en) 1999-12-03 2000-12-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000006706A JP2001196477A (ja) 2000-01-14 2000-01-14 半導体装置

Publications (2)

Publication Number Publication Date
JP2001196477A true JP2001196477A (ja) 2001-07-19
JP2001196477A5 JP2001196477A5 (enExample) 2005-07-07

Family

ID=18535194

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000006706A Pending JP2001196477A (ja) 1999-12-03 2000-01-14 半導体装置

Country Status (1)

Country Link
JP (1) JP2001196477A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006121038A (ja) * 2004-10-21 2006-05-11 Hynix Semiconductor Inc 半導体メモリ素子の金属配線形成方法
JP2008509446A (ja) * 2004-08-11 2008-03-27 スパンジョン・リミテッド・ライアビリティ・カンパニー 狭い間隔のフラッシュメモリコンタクト開口部を形成する方法
US7622762B2 (en) 2003-07-15 2009-11-24 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory and method for fabricating the same
US8193058B2 (en) 2007-06-26 2012-06-05 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
TWI495046B (zh) * 2012-08-21 2015-08-01 Nanya Technology Corp 記憶體製程及以其製造的記憶體結構

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7622762B2 (en) 2003-07-15 2009-11-24 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory and method for fabricating the same
US8253182B2 (en) 2003-07-15 2012-08-28 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory and method for fabricating the same
JP2008509446A (ja) * 2004-08-11 2008-03-27 スパンジョン・リミテッド・ライアビリティ・カンパニー 狭い間隔のフラッシュメモリコンタクト開口部を形成する方法
JP2010156994A (ja) * 2004-08-11 2010-07-15 Spansion Llc 狭い間隔のフラッシュメモリコンタクト開口部を形成する方法
JP2006121038A (ja) * 2004-10-21 2006-05-11 Hynix Semiconductor Inc 半導体メモリ素子の金属配線形成方法
US8193058B2 (en) 2007-06-26 2012-06-05 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
TWI495046B (zh) * 2012-08-21 2015-08-01 Nanya Technology Corp 記憶體製程及以其製造的記憶體結構
US9123784B2 (en) 2012-08-21 2015-09-01 Nanya Technology Corporation Memory process and memory structure made thereby
US9147604B2 (en) 2012-08-21 2015-09-29 Nanya Technology Corporation Memory process

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