JP2001196477A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JP2001196477A JP2001196477A JP2000006706A JP2000006706A JP2001196477A JP 2001196477 A JP2001196477 A JP 2001196477A JP 2000006706 A JP2000006706 A JP 2000006706A JP 2000006706 A JP2000006706 A JP 2000006706A JP 2001196477 A JP2001196477 A JP 2001196477A
- Authority
- JP
- Japan
- Prior art keywords
- contact
- film
- contact portion
- bit line
- contact hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 55
- 229910052751 metal Inorganic materials 0.000 claims abstract description 69
- 239000002184 metal Substances 0.000 claims abstract description 69
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 21
- 229920005591 polysilicon Polymers 0.000 claims abstract description 20
- 238000002955 isolation Methods 0.000 claims description 79
- 238000000034 method Methods 0.000 claims description 75
- 238000005530 etching Methods 0.000 claims description 67
- 238000009792 diffusion process Methods 0.000 claims description 55
- 238000004519 manufacturing process Methods 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 20
- 230000002093 peripheral effect Effects 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 93
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 93
- 210000004027 cell Anatomy 0.000 description 127
- 239000000758 substrate Substances 0.000 description 37
- 238000001020 plasma etching Methods 0.000 description 35
- 230000008569 process Effects 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 230000009467 reduction Effects 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 210000004128 D cell Anatomy 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000006706A JP2001196477A (ja) | 2000-01-14 | 2000-01-14 | 半導体装置 |
| US09/726,582 US6611010B2 (en) | 1999-12-03 | 2000-12-01 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000006706A JP2001196477A (ja) | 2000-01-14 | 2000-01-14 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001196477A true JP2001196477A (ja) | 2001-07-19 |
| JP2001196477A5 JP2001196477A5 (enrdf_load_stackoverflow) | 2005-07-07 |
Family
ID=18535194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000006706A Pending JP2001196477A (ja) | 1999-12-03 | 2000-01-14 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001196477A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006121038A (ja) * | 2004-10-21 | 2006-05-11 | Hynix Semiconductor Inc | 半導体メモリ素子の金属配線形成方法 |
| JP2008509446A (ja) * | 2004-08-11 | 2008-03-27 | スパンジョン・リミテッド・ライアビリティ・カンパニー | 狭い間隔のフラッシュメモリコンタクト開口部を形成する方法 |
| US7622762B2 (en) | 2003-07-15 | 2009-11-24 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory and method for fabricating the same |
| US8193058B2 (en) | 2007-06-26 | 2012-06-05 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
| TWI495046B (zh) * | 2012-08-21 | 2015-08-01 | Nanya Technology Corp | 記憶體製程及以其製造的記憶體結構 |
-
2000
- 2000-01-14 JP JP2000006706A patent/JP2001196477A/ja active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7622762B2 (en) | 2003-07-15 | 2009-11-24 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory and method for fabricating the same |
| US8253182B2 (en) | 2003-07-15 | 2012-08-28 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory and method for fabricating the same |
| JP2008509446A (ja) * | 2004-08-11 | 2008-03-27 | スパンジョン・リミテッド・ライアビリティ・カンパニー | 狭い間隔のフラッシュメモリコンタクト開口部を形成する方法 |
| JP2010156994A (ja) * | 2004-08-11 | 2010-07-15 | Spansion Llc | 狭い間隔のフラッシュメモリコンタクト開口部を形成する方法 |
| JP2006121038A (ja) * | 2004-10-21 | 2006-05-11 | Hynix Semiconductor Inc | 半導体メモリ素子の金属配線形成方法 |
| US8193058B2 (en) | 2007-06-26 | 2012-06-05 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
| TWI495046B (zh) * | 2012-08-21 | 2015-08-01 | Nanya Technology Corp | 記憶體製程及以其製造的記憶體結構 |
| US9123784B2 (en) | 2012-08-21 | 2015-09-01 | Nanya Technology Corporation | Memory process and memory structure made thereby |
| US9147604B2 (en) | 2012-08-21 | 2015-09-29 | Nanya Technology Corporation | Memory process |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6611010B2 (en) | Semiconductor device | |
| US4755864A (en) | Semiconductor read only memory device with selectively present mask layer | |
| US7109547B2 (en) | Non-volatile semiconductor memory device having memory cell array suitable for high density and high integration | |
| KR0120926B1 (ko) | 반도체 집적회로 장치 및 그 제조방법 | |
| US7601630B2 (en) | Semiconductor device and method for fabricating the same | |
| JP3389112B2 (ja) | 不揮発性半導体記憶装置及びその製造方法 | |
| JP2002289703A (ja) | 半導体記憶装置およびその製造方法 | |
| JPH04342164A (ja) | 半導体集積回路装置の形成方法 | |
| US20030080429A1 (en) | Semiconductor device | |
| US7928494B2 (en) | Semiconductor device | |
| JP3828332B2 (ja) | 強誘電体メモリ | |
| US5285110A (en) | Interconnection structure in semiconductor device | |
| JP3533037B2 (ja) | 半導体集積回路装置の製造方法 | |
| JP2001196477A (ja) | 半導体装置 | |
| US20040014323A1 (en) | Method of fabricating semiconductor device | |
| KR100346598B1 (ko) | 반도체 디바이스의 메모리 셀 제조 방법 | |
| JP2005183763A (ja) | 不揮発性メモリを含む半導体装置の製造方法 | |
| JPH07183411A (ja) | 積層ゲート型不揮発性半導体記憶装置 | |
| JPH03194967A (ja) | 半導体不揮発性メモリの製造方法 | |
| TWI884649B (zh) | 反熔絲型非揮發性記憶胞 | |
| JPH1093081A (ja) | 半導体素子、半導体記憶装置、半導体素子の製造方法 | |
| US20240331738A1 (en) | Semiconductor device and manufacturing method of the semiconductor device | |
| JP4047500B2 (ja) | 半導体装置及びその製造方法 | |
| JPH1126436A (ja) | 半導体装置の製造方法 | |
| JP2005294518A (ja) | 半導体装置およびその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20041101 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20041101 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070524 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080624 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080820 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20081118 |