JP2001196420A - Semiconductor device manufacturing method and device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method and an equipment for a semiconductor device in which electrode terminals can be markedly lessened in connection resistance between them even if the conventional Al is used as electrode material when the electrode terminals of the semiconductor device are connected together with conductive adhesive agent. SOLUTION: A semiconductor chip 34 serving as a specimen is installed on a cathode electrode 35 in a plasma processing chamber 32. An oxide 39 on the surface of the electrode terminal 38 of the specimen 34 is removed by plasma 37 generated between the cathode electrode 35 and an anode electrode 36. The specimen is transferred into an application chamber 33 via an intermediate chamber 44 in which an inert gas is fed, and conductive adhesive agent paste 43 is applied on the surface of the electrode terminal 38 in an inert gas of an atmospheric pressure, being fed from a dispenser 42. The oxide 39 of the electrode terminal 38 is removed, then the conductive adhesive paste layer 43 can be formed on the surface of the electrode terminal 38 without coming into contact with oxygen contained in the air, so that a semiconductor device of small connection resistance can be manufactured.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing method and apparatus using a conductive adhesive for connection between electrode terminals of a semiconductor device.

[0002]

2. Description of the Related Art A conventional connection between electrode terminals of a semiconductor device using a conductive adhesive is disclosed in, for example, JP-A-6-224259 and JP-A-8-227913. A conductive adhesive is applied directly to the resin and cured to make electrical and mechanical connections. The connection between the terminals using the conductive adhesive has an advantage that it can be connected at a lower temperature than a solder connection and does not use a flux, so that a cleaning step is not required and a low-cost manufacturing method can be obtained.

[0003]

However, there is a problem that the electrical resistance between the terminals connected by the conductive adhesive increases depending on the type of metal used for the electrode terminals, and the electrical performance cannot be satisfied.

[0004] In particular, in the case of ordinary inexpensive electrode materials such as copper and aluminum, the resistance value is large, and the connection resistance value is greatly varied, thereby significantly reducing the reliability of the semiconductor device.

[0005] As the density of the semiconductor elements increases, the increase and the variation in the resistance value are decisive problems that hinder practical use. For this reason, conventionally, a method of connecting with a conductive adhesive using gold or gold plating for the electrode terminal metal has been used. This eliminates an increase in the resistance value of the electrode terminal connection portion, but leaves a problem that the semiconductor device becomes expensive.

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to solve the above-mentioned conventional problems, and it is possible to use a conventional inexpensive metal other than gold, such as copper or aluminum, as an electrode material. An object of the present invention is to provide a method and an apparatus for manufacturing a semiconductor device using an agent. Thus, a low-cost semiconductor device with improved resistance value characteristics between electrode terminal connections can be easily obtained.

[0007]

Means for Solving the Problems To achieve the above object, the present inventors have determined the connection resistance when a conventional inexpensive metal such as copper or aluminum is used as an electrode terminal by using a conductive adhesive. About various experiments.

As a result, the electrical resistance between the electrode terminals connected by the conductive adhesive is increased because the volume resistivity of the cured product of the conductive adhesive is large, and the surface of the electrode terminal is contaminated and stained. It was found that the presence of surface oxides was due.

Among them, it has been found that an oxide formed on the surface of the electrode terminal causes the largest increase in the resistance value, and that a metal surface forms a surface oxide within a few seconds in the air.

The present invention has been made based on these findings, and the features of the semiconductor device manufacturing method of the present invention will be described below.

A feature of the manufacturing method is that, in the step of applying a conductive adhesive to the electrode terminals of the semiconductor device, the oxide is removed from the surface of the metal constituting the electrode terminals.
There are two methods for removing oxides, one of which is a plasma treatment method using a rare gas such as Ar, Ar + H ₂ , or Xe or a nitrogen gas, and the other is a mechanical treatment. Is the way.

In the case of the plasma processing method, the metal surface can be exposed by removing the oxide from the electrode terminal surface by ion etching. When applying the conductive adhesive to the exposed metal surface, it is important to apply the conductive adhesive in a non-oxidizing gas atmosphere excluding oxygen so that the metal surface is not oxidized again.

The gas pressure of the coating atmosphere may be atmospheric pressure, and the non-oxidizing gas atmosphere may be an inert gas such as nitrogen or a zero-group element (rare gas) in the periodic table, or a reducing gas such as hydrogen. It is desirable to perform in an atmosphere.

In the case of the method of mechanically removing oxide from the electrode terminal surface, an amount of conductive adhesive necessary for connection is previously applied to the electrode terminal surface, and the conductive adhesive is used to open air. With the electrode terminal surface cut off from
A jig made of metal, ceramics, or the like having a sharp tip structure is applied to the electrode terminal surface to mechanically scrape it.

In this method, the oxide is mechanically scraped off with the conductive adhesive applied to the surface of the electrode terminal in advance, so that the surface of the electrode terminal remains conductive even during and after the removal of the oxide. It is not oxidized again because it is covered with the agent. Therefore, the application atmosphere may be the air, and it is not always necessary to use a non-oxidizing gas atmosphere.

In short, in the step of applying the conductive adhesive to the surface of the electrode terminal, the surface of the electrode terminal is brought into contact with oxygen after removing the oxide in the plasma treatment method or during the removal in the method of mechanically scraping. It is important to apply the conductive adhesive without doing so.

In the manufacturing method of the present invention, the electrode terminals coated with the conductive adhesive are aligned with the electrode terminals on the mounting substrate, and a conductive adhesive layer is formed between the two electrodes to establish electrical connection. There is also a characteristic in the process to be performed. Generally, the connection step using this kind of conductive adhesive is performed by thermally curing the resin component of the adhesive in the air, but in the present invention, the connection is performed in an inert gas atmosphere such as nitrogen gas or a rare gas. It is desirable to cure.

The semiconductor device manufacturing apparatus capable of achieving the above object of the present invention is characterized by plasma generating means for performing plasma processing on the electrode terminal surfaces of the semiconductor device under a predetermined reduced pressure, a gas supply port and an exhaust port. A plasma processing chamber having: a semiconductor device plasma-processed in the plasma processing chamber; an intermediate chamber that relays the semiconductor device in a reduced-pressure non-oxidizing gas atmosphere; and an electrode terminal surface of the semiconductor device that relays the intermediate chamber. It comprises a coating chamber having means for applying a conductive adhesive in a non-oxidizing gas atmosphere under normal pressure, and a transfer means for sequentially transferring semiconductor devices from the plasma processing chamber to the coating chamber.

[0019]

The semiconductor device DETAILED DESCRIPTION OF THE INVENTION The present invention is directed, IC chips, capacitors chip, BGA (B all G ri
d A rray), include mounting substrate, the electrode terminal including a chip, the electrode of the chip mounting substrate (mounting wiring board), the solder balls formed later in the electrode. The metal of the electrode terminal is Cu, Al, Ag, Sn, Pb, SnPb, AgPt, SnAg, SnBi.
and so on.

The plasma processing method described above as one of the methods for removing the metal oxide on the surface of the electrode terminal is a known method such as a high-frequency plasma processing apparatus having a parallel plate type electrode, a microwave discharge plasma processing apparatus, or the like. Can be performed by the plasma processing apparatus.

Examples of the method of applying the conductive adhesive include a dispenser method, a printing method, and a transfer method. After application, it is taken out into the atmosphere and cured by heating. In order to prevent oxygen from coming into contact with the metal surface at a high temperature until the paste is hardened, the heat hardening is also preferably performed in an inert gas atmosphere.

As a method for mechanically removing the metal oxide on the surface of the electrode terminal, the terminal surface is scraped off with a metal or ceramic having a sharp tip structure. Also, the tip is round,
The oxide film is removed by moving the terminal surface by applying pressure with a jig such as a metal or ceramic on a flat surface. This is because metal particles such as Ag in the conductive adhesive destroy the oxide film on the electrode terminal surface due to pressure.

Since a conductive adhesive is applied to the surface of the electrode terminals, the newly formed metal surface is covered with the conductive adhesive immediately after removing the oxide film. Oxidation is prevented.

In the case of an IC chip, the steps of applying and curing these conductive adhesives may be performed on a wafer and then separated into individual chips.

Further, as described above, a typical manufacturing apparatus of the present invention is a plasma generating apparatus for performing a plasma treatment on an electrode terminal surface of a semiconductor device under a predetermined reduced pressure in order to remove an oxide on the electrode terminal surface of the semiconductor device. A plasma processing chamber having means, a gas supply port, and an exhaust port is provided. A rare gas or a nitrogen gas such as Ar, Ar + H ₂ , or Xe is supplied from the gas supply port into the plasma processing chamber. Air is exhausted from the exhaust port by an exhaust pump, and the pressure in the plasma processing chamber is set to, for example, 1 to 100 Pa.

The plasma generating means is constituted by a well-known plasma processing apparatus such as a high-frequency plasma processing apparatus having a high-frequency power supply and a parallel plate type electrode, or a microwave discharge plasma processing apparatus having a microwave power supply and a discharge chamber. Is done.

The intermediate chamber is a relay chamber provided between the plasma processing chamber and the chamber for applying the conductive adhesive, and transports the semiconductor device subjected to plasma processing from the plasma processing chamber to the atmospheric pressure coating chamber. In this case, the pressure is provided as a buffer region so that the pressure of the plasma processing chamber does not suddenly increase.

Therefore, a set of gates for loading / unloading the semiconductor device into / from the intermediate chamber, a gas supply port for supplying a non-oxidizing gas so as not to oxidize the electrode terminal surface of the plasma-processed semiconductor device, and an exhaust port. When a semiconductor device subjected to plasma processing is transported from the plasma processing chamber to the coating chamber at atmospheric pressure, the chamber is maintained in a non-oxidizing gas atmosphere.

From the gas supply port, an inert gas such as a nitrogen gas or a rare gas or a reducing gas such as a hydrogen gas containing no oxygen is supplied as a non-oxidizing gas in some cases. The gas pressure may be set higher than the pressure in the plasma processing chamber, for example, about 100 to 500 Pa.

The coating chamber is provided with a means for coating a conductive adhesive in a non-oxidizing gas atmosphere at atmospheric pressure on the surface of the electrode terminal of the semiconductor device connected to the intermediate chamber.
As means for applying, for example, a mechanism for supplying a predetermined amount of conductive adhesive from a dispenser connected to a coating liquid tank to the electrode terminal surface of the semiconductor device is provided, and the dispenser and the semiconductor device are relatively And a mechanism for positioning the dispenser and the electrode terminal to be coated.

Since the interior of the room is made of a non-oxidizing gas atmosphere as in the case of the intermediate room, an inert gas such as a nitrogen gas or a rare gas is used.
Alternatively, in some cases, it has a gas supply port and an exhaust port for supplying a reducing gas such as hydrogen gas which does not contain oxygen.

The transfer means transfers the semiconductor device sequentially from the plasma processing chamber to the coating chamber, and is configured to intermittently or continuously move the semiconductor device from each chamber to the chamber. .

As described above, in the manufacturing apparatus of the present invention, the electrode terminal surface is oxidized again after the oxide on the electrode terminal surface is removed in the plasma processing chamber until the conductive adhesive is applied in the coating chamber. One of the features is that processing is performed in an atmosphere (a non-oxidizing atmosphere) from which oxygen gas has been removed so as not to be performed.

[0034]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A typical embodiment of the present invention will be described below with reference to the drawings. <Embodiment 1> FIGS. 1 to 5 show a first embodiment of the present invention, and the manufacturing process of the embodiment will be described with reference to FIGS. FIG. 1 is a cross-sectional view of a semiconductor chip 1. The semiconductor chip 1 has a circuit surface facing down, and Cu electrode terminals 2 are formed. A Cu oxide film 3 is formed on the surface of the electrode terminal 2.

FIG. 2 shows a Cu oxide film 3 formed by plasma treatment.
FIG. That is, the removal of the oxide film 3 is performed using a parallel plate type high-frequency plasma processing apparatus with a frequency of 13.56 MHz and an output of 500 W (the details of the manufacturing apparatus will be described in Example 5), and Ar plasma under a processing pressure of 10 Pa is used. I went in.

FIG. 3 is a cross-sectional view formed by applying a commercially available conductive adhesive paste 4 to the surface of the electrode terminal 2 from which the oxide has been removed by the plasma treatment. When applying the conductive adhesive paste 4, after removing the oxide film 3,
A conductive adhesive paste 4 was formed on the Cu electrode terminal 2 in an N ₂ atmosphere without bringing the surface of the electrode terminal 2 into contact with the atmosphere.

The commercially available conductive adhesive paste 4 is made of an epoxy resin and Ag particles, and is an isotropic conductive adhesive.
The formation of the conductive adhesive paste 4 was performed with a dispenser. FIG. 4 is a sectional view in which the semiconductor chip 1 is mounted on the mounting board 5. After forming the conductive adhesive paste 4, the semiconductor chip 1 was mounted on the mounting substrate 5 by taking it out into the air and aligning it with the Au electrode terminals 6 formed on the mounting substrate 5. This was cured by heating at 150 ° C. for 1 hour in an N 2 atmosphere.

FIG. 5 is a sectional view in which the underfill 7 is formed. After the terminals of the semiconductor chip 1 and the mounting substrate 5 were connected by the above heat curing, an underfill 7 of an epoxy resin was injected into a gap between the semiconductor chip 1 and the mounting substrate 5 and cured at 150 ° C. for one hour.

The specific resistance between the electrode terminals 2-6 of the semiconductor device of this embodiment manufactured in this way was compared with a comparative example in which no plasma treatment was performed. As a result, the specific resistance of the present example was 10 ⁻³ to 10 ⁻⁴ Ωcm, while that of the comparative example was as high as 10 ⁻² to 10 ⁺⁴ Ωcm, and the connection resistance was significantly reduced by the present invention. This has made it possible to use copper instead of gold for the electrode terminals of the semiconductor chip.

<Embodiment 2> FIGS. 6 to 11 show the second embodiment.
Will be described. FIG. 6 is a sectional view of a ball grid array substrate 9 on which a semiconductor chip 8 is mounted. Electrode 10 of substrate 9
PbSn solder balls 11 are formed on the
An oxide 12 of PbSn is generated.

FIG. 7 shows the oxide 1 on the surface of the solder ball 11.
FIG. 2 is a cross-sectional view from which No. 2 has been removed. The removal of the oxide film 12 was performed by a plasma treatment as in the first embodiment. That is, using a parallel plate type high-frequency plasma processing apparatus with a frequency of 13.56 MHz and an output of 400 W (the details of the manufacturing apparatus will be described in Example 5), Ar plasma at a processing pressure of 8 Pa was used.

FIG. 8 is a sectional view of a commercially available isotropic conductive adhesive paste 13 of Ag-filled epoxy resin.
The conductive adhesive paste 4 was formed by a transfer method in which the solder balls 11 were pressed and adhered to the paste 4 having a constant thickness.

FIG. 9 is a sectional view of a second mounting board 14 on which the board 9 (which will be a first mounting board) on which the semiconductor chip 8 is mounted is mounted. PbSn electrode 15 on mounting substrate 14
Is formed on the surface of PbSn.

FIG. 10 is a cross-sectional view in which the oxide 16 on the electrode 15 has been removed. The oxide film 16 was removed by Ar plasma in the same manner as in the condition of FIG. 7, and then kept in an N ₂ atmosphere so as not to be oxidized again.

FIG. 11 is a sectional view of the mounting board 14 on which the ball grid array board 9 is mounted. After alignment and mounting, the substrate was cured by heating at 140 ° C. for 1 hour in an N ₂ atmosphere. In the connection between the first mounting board and the second mounting board thus connected, the resistance value was significantly reduced as in the first embodiment.

<Embodiment 3> The third embodiment is shown in FIGS.
7 will be described. FIG. 12 is a sectional view of a wafer 17 on which a large number of semiconductor elements are formed. Each semiconductor element has a Cu electrode terminal 2 formed thereon, and a Cu oxide film 3 is formed on the surface thereof. .

FIG. 13 is a cross-sectional view in which the Cu oxide film 3 has been removed. The removal of the oxide film 3 was performed using Ar plasma under the conditions of a high-frequency output of 500 W and a processing pressure of 10 Pa, as in Example 1.

FIG. 14 is a sectional view in which the conductive adhesive paste 4 is formed on the surface of the electrode terminal from which the oxide has been removed. After the removal of the oxide film 3, the Cu electrode terminal 2 is not brought into contact with the atmosphere and N ₂
Conductive adhesive paste 2 on Cu electrode terminal 18 in atmosphere
0 was formed by printing and cured in N ₂ at 150 ° C. for 1 hour.

FIG. 15 is a sectional view of the semiconductor chip 1 obtained by cutting the wafer 17 of FIG. FIG. 16 is a sectional view of the mounting board 5. A conductive adhesive paste 24 is formed on the Au electrode terminals 6 by printing.

FIG. 17 The semiconductor chip 1 was mounted on the mounting substrate 5, the conductive adhesive 24 was cured in N ₂ , the underfill 7 was injected, and the mixture was heated and cured at 150 ° C. for 1 hour. The connection resistance between the semiconductor chip 1 thus obtained and the electrode terminals 2-6 of the mounting substrate 5 was substantially equal to those of Examples 1 and 2.

In each of the above embodiments, the plasma treatment using Ar gas was performed to remove the oxide, but the same effect can be obtained by replacing the gas species with another rare gas or N ₂ gas.

<Embodiment 4> A fourth embodiment will be described with reference to a sectional process diagram of FIG. FIG. 18A shows that the oxide 3 is generated on the surface of the Cu electrode 2 on the semiconductor chip 1. The conductive adhesive paste 4 having fluidity but relatively high viscosity is applied and formed on the oxide 28.

As shown in FIG. 18B, the metal jig 3
At 0, the oxide 3 in contact with the paste 4 is mechanically scraped off. Since the oxide is scraped off while the surface of the electrode 2 is always covered with the paste 4, even if the oxide is removed, the exposed metal surface is cut off by the paste 4 and does not come into contact with the atmosphere.

As shown in FIG. 18C, the Cu metal surface of the electrode 2 from which the oxide has been removed and the paste 4
Contact. All of these processes take place in the atmosphere. Thereafter, in the same manner as in the steps shown in Examples 1 to 3,
Connection with the mounting board was made.

<Embodiment 5> A fifth embodiment will be described with reference to FIG. FIG. 19 is a schematic cross-sectional view of an apparatus 31 for manufacturing a semiconductor device having a small resistance value by a conductive adhesive connection.

First, the structure of this manufacturing apparatus will be described. As shown, the manufacturing apparatus 31 includes a plasma processing chamber 32, a conductive adhesive application chamber 33, and an intermediate chamber connecting these two processing chambers. 44, and a transport mechanism 45 for transporting at least one of the semiconductor device and the mounting substrate intermittently or continuously sequentially into these three chambers.

The plasma processing chamber 32 is provided with a plasma generating means. In this example, a parallel plate type high frequency discharge plasma generating apparatus is shown. That is, the plasma generating means includes the high frequency power supply 50, the anode electrode 3
6, a cathode electrode 35, a gas supply port 46a for supplying a plasma generating gas into the chamber, an exhaust port 47b connected to an exhaust pump (not shown), and a sample on which, for example, the semiconductor chip 34 to be processed is mounted. A transport jig 34 also serving as a table is provided. Reference numeral 48a denotes a first gate for carrying a sample into a room.

The plasma generating means is not limited to this high-frequency discharge plasma generator, but may be any other well-known microwave discharge plasma generator which discharges a microwave having an oscillation source from a magnetron through a waveguide in the discharge tube. It can be replaced.

The intermediate chamber 44 is a space partitioned by the wall surfaces of the plasma processing chamber 32 and the coating chamber 33 as partition walls, and these two partition walls are formed by movable partition plates 40a and 40b. Reference numeral 46b denotes a gas supply port, which supplies a non-oxidizing gas (an inert gas such as a nitrogen gas or a rare gas, or a reducing gas such as hydrogen) into a room, and performs a plasma treatment on the sample 3.
4 prevents re-oxidation of the electrode terminal 38.

Since the intermediate chamber 44 has a large pressure difference between the pressure of the plasma processing chamber 32 reduced to satisfy the discharge condition and the coating chamber 33 for processing at atmospheric pressure, the intermediate chamber 44 is directly carried into the next coating chamber 33. Instead, it is provided to increase the pressure stepwise by relaying the intermediate chamber 44 serving as a buffer area.

Therefore, the sample 34 is transferred to the plasma processing chamber 3
2 to the coating chamber 33 beforehand.
0a, 40b are closed and the inside of the intermediate chamber 44 is depressurized to a predetermined pressure to maintain a non-oxidizing gas atmosphere, and the movable partition plate 40a
Is opened, the sample 34 is carried into the intermediate chamber 44, the movable partition plate 40 a is closed, and then the movable partition plate 40 b is opened to transport the sample 34 to the coating chamber 33.

The coating chamber 33 is provided with means for supplying a conductive adhesive, a gas supply port 46c, an exhaust port 47c, and a sample removal gate 48b. The conductive adhesive supply means includes a dispenser device 42, a conductive adhesive tank 49, and a positioning means 51. The alignment means 51 aligns the sample electrode terminal 38 with the dispenser device 42, and the conductive adhesive paste 43 required for connection from the dispenser device 42.
Is supplied on the electrode terminal 38.

The positioning means 51 may be provided on the conveying means 45 side instead of the conductive adhesive supply means, and the dispenser device 42 and the electrode terminal 38 can be relatively positioned. If so, any may be selected. A non-oxidizing gas is supplied from the gas supply port 46c as in the case of the intermediate chamber 44, and the gas atmosphere is set to an atmospheric pressure.
As a gas type, nitrogen gas which is inexpensive and easy to handle is practical.

According to this apparatus, the electrode terminal 3 of the sample 34
Since the steps from the step of removing the oxide 39 formed in Step 8 to the step of applying the conductive adhesive paste 43 are carried out in a non-oxidizing gas atmosphere, the electrode terminals which have been subjected to the plasma treatment can be electrically conductive without being reoxidized. The adhesive paste 43 can be applied, so that the connection resistance between the electrode terminals can be reliably reduced.

Next, an example of a method for manufacturing a semiconductor device using this device will be described. First, the semiconductor chip 34 is loaded from the gate 48 a of the plasma processing chamber 32 and is set on the cathode electrode 35. The plasma processing chamber 32 is evacuated from an exhaust port 47a by an exhaust pump (not shown) and supplies a rare gas such as Ar from a gas supply port 46a to maintain the indoor atmosphere at a reduced pressure of, for example, 1 to 100 Pa.

For example, a frequency of 1 to 30 MHz, 40
A power of 0 to 500 W is supplied to generate a high frequency discharge to generate a plasma 37, and the semiconductor chip 34
The oxide 39 on the surface of the electrode terminal 38 is removed.

Next, the movable partition plate 40 a forming a partition between the intermediate chamber 44 and the plasma processing chamber 32 is opened, and
Thus, the sample 34 is carried into the intermediate chamber 44, and after being transported, the movable partition plate 40a is closed. The intermediate chamber 44 has an exhaust port 47b in advance.
From together is exhausted by an exhaust pump (not shown), for example, from a gas supply port 46b Ar, inert gas such as N ₂ is supplied, some example 100~500Pa about higher than the pressure of the plasma processing chamber 32 to room atmosphere Set to.

Next, an inert gas such as Ar or N ₂ is introduced into the intermediate chamber 44 so that the pressure becomes normal pressure.
0b is opened, and the sample 34 is transported in advance with Ar and N
An inert gas such as ₂ is carried into the coating chamber 33 filled from the gas supply port 46c. In the coating chamber 33, the dispenser device 42 and the electrode terminal 38 of the sample 34 are aligned by the alignment means 51, and a predetermined amount of conductive adhesive paste 43 necessary for connection is supplied from the dispenser device 42 and Apply to.

After the oxide 39 of the electrode terminal 38 is removed by the device 31, the conductive adhesive paste 43 can be formed without contacting oxygen in the atmosphere, and the manufacture of a semiconductor device having a small connection resistance value can be achieved. Done.

[0070]

As described in detail above, according to the present invention, the desired object of reducing the connection resistance in connection between electrodes using a conductive adhesive was achieved. That is, a semiconductor device having a small connection resistance value can be obtained since the conductive adhesive is in direct contact with the metal surface of the electrode terminal when the conductive adhesive is connected.

Thus, even if expensive Au or Au-plated electrodes are not used for the electrode terminals, the conventional inexpensive C
Electrode materials such as u, Al and the like can be used, and there are many materials that contribute to industry.

[Brief description of the drawings]

FIG. 1 is a sectional view of a semiconductor chip according to a first embodiment of the present invention.

2 is a sectional view of the electrode terminal of FIG. 1 from which an oxide film has been removed;

FIG. 3 is a sectional view in which a conductive adhesive is formed on the electrode terminals of FIG. 2;

FIG. 4 is a sectional view in which the semiconductor chip of FIG. 3 is mounted on a mounting board;

FIG. 5 is a cross-sectional view in which an underfill is formed in FIG. 4;

FIG. 6 is a sectional view of a ball grid array substrate according to a second embodiment.

FIG. 7 is a sectional view of the electrode terminal of FIG. 6 from which an oxide film has been removed;

FIG. 8 is a cross-sectional view in which a conductive adhesive is formed on the electrode terminals of FIG. 7;

FIG. 9 is a cross-sectional view of a mounting board according to a second embodiment.

FIG. 10 is a sectional view of the electrode terminal of FIG. 10 from which an oxide film has been removed;

11 is a sectional view showing the semiconductor chip of FIG. 7 mounted on the mounting board of FIG. 10;

FIG. 12 is a sectional view of a wafer according to a third embodiment.

FIG. 13 is a sectional view of the electrode terminal of FIG. 12 from which an oxide film has been removed;

FIG. 14 is a cross-sectional view in which a conductive adhesive is formed on the electrode terminals of FIG.

FIG. 15 is a sectional view of a portion obtained by cutting the wafer of FIG. 14;

FIG. 16 is a sectional view of a mounting board according to a third embodiment.

FIG. 17 is a cross-sectional view in which the semiconductor chip of FIG. 14 is mounted on FIG. 16 and an underfill is formed;

FIG. 18 is a sectional view of a semiconductor chip according to a fourth embodiment.

FIG. 19 is a sectional view of a semiconductor manufacturing apparatus according to a fifth embodiment.

[Explanation of symbols]

 1, 8, 21, 34 ... semiconductor chip, 2, 6, 10, 15, 38 ... electrode terminal, 3, 12, 16, 39 ... surface oxide, 4, 24, 43 ... conductive adhesive (Paste), 5, 14 mounting board, 7 underfill, 9 ball grid array board, 11 solder balls, 17 wafer, 30 jig for removing oxide film, 31 manufacturing 32, plasma processing chamber, 33, coating chamber, 35, cathode electrode, 36, anode electrode, 37, plasma, 40a, 40b, movable partition plate, 41, sample transport jig, 42 ... Dispenser, 44 ... Intermediate chamber, 45 ... Conveying means, 46 ... Gas supply port, 47a, 47b, 47c ... Exhaust port, 48a, 48b ... Gate, 50 ... High frequency power supply, 51 ... Positioning means.

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Kenji Yoshimi 292, Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Prefecture Inside the Hitachi, Ltd.Production Technology Laboratory (72) Inventor Masakazu Sakagami 810, Shimo-Imaizumi, Ebina-shi, Kanagawa Prefecture Hitachi, Ltd. PC Division (72) Inventor Yasuhiro Narukawa 292, Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Prefecture F-term in Hitachi, Ltd. Production Technology Research Laboratories 5F044 KK19 QQ04 RR19

Claims (9)

[Claims] A step of applying a conductive adhesive to an electrode terminal of the semiconductor device; a step of positioning the electrode terminal coated with the conductive adhesive on an electrode terminal on a mounting substrate; Forming a conductive adhesive layer between the aligned electrode terminals by curing the adhesive, and making an electrical connection, the method for manufacturing a semiconductor device,
The step of applying a conductive adhesive to the electrode terminals of the semiconductor device includes a step of performing a plasma treatment on the surface of the electrode terminals of the semiconductor device to remove oxides formed on the surface, and the step of performing the plasma treatment. Applying a conductive adhesive to the electrode surface in a non-oxidizing gas atmosphere without bringing the electrode surface into contact with oxygen. 2. The method of manufacturing a semiconductor device according to claim 1, wherein, when the surface of the electrode terminal is subjected to plasma treatment, nitrogen or a gas of an element belonging to Group 0 of the periodic table is used as a gas species. 3. The non-oxidizing gas atmosphere in the step of applying the conductive adhesive is a nitrogen gas atmosphere, a gas atmosphere of a Group X element of the periodic table, or a gas atmosphere containing a reducing element and containing no oxygen. 2. The method for manufacturing a semiconductor device according to claim 1, wherein: 4. A step of forming a conductive adhesive layer between the two electrode terminals by curing the conductive adhesive to perform electrical connection, wherein the conductive adhesive is cured by an inert gas. 2. The method according to claim 1, wherein the method is performed in an atmosphere. 5. A step of applying a conductive adhesive to an electrode terminal of a semiconductor device, a step of aligning the electrode terminal coated with the conductive adhesive on an electrode terminal on a mounting board, and Forming a conductive adhesive layer between the aligned electrode terminals by curing an adhesive to make an electrical connection, wherein the electrode terminal of the semiconductor device is provided. Applying the conductive adhesive to the electrode terminals of the semiconductor device in the air, and covering the electrode terminals with the conductive adhesive, thereby shutting off the outside air. Mechanically removing an oxide from the surface of the electrode terminal below. 6. The semiconductor device according to claim 1, wherein the semiconductor device is a semiconductor chip separated from a wafer, and the mounting substrate has a first substrate on which the semiconductor chip is mounted, and a second substrate on which the first substrate on which the semiconductor chip is mounted is mounted. 6. The method for manufacturing a semiconductor device according to claim 1, comprising two substrates. 7. A plasma processing chamber having a plasma generating means for performing plasma processing on a surface of an electrode terminal of a semiconductor device under a predetermined reduced pressure, a plasma processing chamber having a gas supply port and an exhaust port, and a semiconductor device plasma-processed in the plasma processing chamber. An intermediate chamber for relaying in a reduced-pressure non-oxidizing gas atmosphere; and a means for applying a conductive adhesive in a non-oxidizing gas atmosphere under normal pressure to the electrode terminal surface of the semiconductor device relaying the intermediate chamber. An apparatus for manufacturing a semiconductor device, comprising: a coating chamber; and transport means for sequentially transporting a semiconductor device from the plasma processing chamber to the coating chamber. 8. The plasma processing apparatus according to claim 7, wherein said plasma generating means is constituted by a plasma processing apparatus using high-frequency discharge.
An apparatus for manufacturing a semiconductor device as described in the above. 9. An apparatus for manufacturing a semiconductor device according to claim 7, wherein said plasma generating means is constituted by a plasma processing apparatus using microwave discharge.