JP2001189401A - Wiring board and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a wiring board of low thermal expansion and high- temperature conductivity which is superior in processability, together with a semiconductor device using it. SOLUTION: A conductor layer or conductor patter is formed on a copper composite member, comprising oxide copper with a resin insulating layer or copper oxide layer in-between.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a novel insulated wiring board for a heat sink or a heat spreader of a semiconductor element, and more particularly to an insulated wiring board using a copper composite material and a semiconductor device using the same.

[0002]

2. Description of the Related Art As an insulating wiring substrate for a heat sink or a heat spreader of a semiconductor device according to the present invention, copper (Cu) or aluminum (Al), which is a metal having high thermal conductivity, is used as a substrate material.
Copper and aluminum insulating substrates using
Monthly electronic materials pp. 86-92.

[0003]

When copper (Cu) or aluminum (Al) is used as a substrate material of a heat sink or an insulated wiring board for a heat spreader, the coefficient of thermal expansion of each of these metallic materials is as large as about 17.24 ppm / K. The thermal expansion coefficient of silicon (about 3 ppm / K), which is a material for semiconductor devices. Therefore, the semiconductor element (I
(Semiconductor element that generates heat by passing current, such as GBT power element)
When soldering is directly performed by soldering, if used in an environment where heat cycles are severe, reliability such as cracking or peeling at the soldered joint occurs, which is insufficient. A semiconductor device (such as a power module) directly joined to an insulated wiring board by soldering can be used only under a mild heat cycle environment. When used in a severe heat cycle environment, molybdenum (Mo) or CIC (Cu-Invar-Cu) is placed between the semiconductor element and the insulated wiring board.
It was necessary to take measures such as providing an intermediate material such as a clad material to reduce the thermal stress generated in the solder joint. As a result, there is a disadvantage that the semiconductor device becomes expensive. Also, if a semiconductor device is made to have a resin-sealed structure, a heat sink or heat spreader made of copper (Cu) or aluminum (Al) cannot match the overall thermal expansion coefficient of the semiconductor element and the resin, resulting in a resin-sealed structure. Problems such as cracks and peeling occurred in the structure.

An object of the present invention is to provide a wiring board having low thermal expansion and high thermal conductivity and excellent workability, and a semiconductor device using the same.

[0005]

According to the present invention, there is provided a wiring board, wherein a conductor layer is formed on a copper composite member containing copper oxide via a resin insulating layer or a copper oxide layer.

The present invention also provides a wiring board, wherein a wiring pattern made of a conductor is formed on a copper composite member containing copper oxide via a resin insulating layer or a copper oxide layer.

That is, in the present invention, a copper composite material is used as a substrate material of an insulated wiring board for a heat sink or a heat spreader. That is, a copper composite material (Cu / Cu ₂ O) made of an alloy in which copper (Cu) and cuprous oxide (Cu ₂ O) are dispersed is used. This material utilizes the high thermal conductivity of copper and the low thermal expansion of copper (I) oxide to control the thermal expansion coefficient and thermal conductivity by the dispersion ratio of copper and copper (I) oxide. Material. For example, when the amount of cuprous oxide (Cu ₂ O) in the copper composite material is 50% by volume, the thermal expansion coefficient is about 9.7 ppm / K, and the thermal conductivity is almost the same as aluminum (Al). The material is obtained. In addition, since this material is not an insulator but a conductor, it can be used as a current-carrying material. By using a copper composite material as an insulating wiring board for a heat sink or a heat spreader of a semiconductor element, molybdenum (M) is placed between the semiconductor element and the insulating wiring board.
o) It is possible to obtain a semiconductor device with low cost and high reliability of a solder joint without providing an intermediate material such as o) or CIC (Cu-Invar-Cu clad material). Further, by devising the shape and the mounting method of the conductor member arranged on the surface of the insulated wiring board, and having the conductor member have both the current-carrying material function and the heat sink function of the semiconductor element, a semiconductor device with higher cost performance can be provided. can get. Further, by setting the thermal expansion coefficient of the sealing resin in the range of 8 to 15 ppm / K, matching of the overall thermal expansion coefficients of the heat sink or the heat spreader with the semiconductor element and the resin can be obtained, and the reliability can be reduced at a low cost. A highly reliable semiconductor device can be obtained.

[0008] through an insulating sheet made of a resin on the copper (Cu) and the first oxide (Cu ₂ O) Cu composite member obtained by dispersing (Cu / Cu ₂ O) was bonded to conductor foil, the conductor A conductor pattern can be formed by etching the foil.

Oxygen is implanted into a copper composite member (Cu / Cu ₂ O) in which copper (Cu) and copper (I) oxide (Cu ₂ O) are dispersed, so that the surface of the copper composite member has a predetermined depth. After performing the insulation treatment to form the first copper oxide (Cu ₂ O) layer, the insulated first copper oxide layer is reduced to a predetermined depth in a reducing atmosphere such as a hydrogen atmosphere, and The portion can be formed into a pure copper (Cu) layer, and the pure copper layer can be etched to form a conductor pattern.

The composite material according to the present invention is preferably made of the following sintered alloy or a plastically worked material obtained by hot or cold forging or rolling.

(1) A complex-shaped mass having a metal and inorganic compound particles having a smaller coefficient of thermal expansion than the metal, wherein the compound particles have a cross-sectional area ratio of 95% or more of the whole particles connected to each other. It is dispersed.

(2) It has a metal and inorganic compound particles having a smaller coefficient of thermal expansion than the metal, and the number of the compound particles alone is 100 or less in a cross section of 100 μm in a cross section. Are dispersed in the form of a complex mass connected to each other.

(3) It has a metal and inorganic compound particles having a smaller coefficient of thermal expansion than the metal, and the compound particles have a Vickers hardness of 300 or less.

(4) having a metal and inorganic compound particles having a smaller coefficient of thermal expansion than the metal, and having a thermal conductivity of 1 W at 20 ° C.
The rate of increase of the average coefficient of thermal expansion at 20 to 150 ° C./m·K is 0.025 to 0.035 ppm / ° C.

(5) It has a metal and inorganic compound particles having a smaller coefficient of thermal expansion than the metal, wherein the compound particles are connected to each other and dispersed as a mass, and the mass is dispersed in a direction elongated by plastic working. Extends to.

(6) Copper and copper oxide particles are provided, and the copper oxide particles are dispersed in a complex-shaped mass in which 95% or more of the whole of the particles in cross-sectional area ratio are connected to each other.

Further, the composite material according to the present invention is preferably made of the following cast alloy or a plastically worked material obtained by hot or cold forging or rolling.

(1) A metal and preferably an inorganic compound having a smaller coefficient of thermal expansion than the metal, and the compound is mostly formed in the form of particles and preferably dendrites having a particle size of 50 μm or less.

The compound is preferably formed in a dendrite shape in which a rod-like trunk is formed with a particulate branch.

(2) It has a metal and an inorganic compound, and the compound is mostly formed in the form of particles and dendrite having a particle size of 5 to 50 μm or less, and 1 to 10% of the whole compound.
Formed fine particles having a particle size of 1 μm or less.

(3) It has a metal and an inorganic compound, and has a coefficient of thermal expansion or thermal conductivity larger than that of the direction in which the solidification direction is horizontal to that direction.

(4) A composite material containing copper and copper oxide is particularly preferable.

(5) It has a metal and a rod-shaped inorganic compound having a diameter of 5 to 30 μm, and preferably, the inorganic compound has a cross-sectional area ratio of 90% or more of the diameter 5
It has a rod shape of ３０30 μm.

(6) It has copper and copper oxide and is plastically processed.

(7) Copper and copper oxide and unavoidable impurities. The copper oxide forms a dendrite at 10 to 55% by volume, and has a linear expansion coefficient of 5 × 10 ⁻⁶ from room temperature to 300 ° C.
~ 17 × 10 ^-6 / ° C and room temperature thermal conductivity of 100-38
It is 0 W / mk and has anisotropy.

(8) Copper, copper oxide, preferably copper oxide (Cu ₂ O) and unavoidable impurities. The copper oxide preferably has 10 to 55% by volume, and has a rod shape oriented in one direction. And a coefficient of linear expansion from room temperature to 300 ° C. of 5 × 10 ^-6
~ 17 × 10 ^-6 / ° C and room temperature thermal conductivity of 100-38
0 W / mk, and the thermal conductivity in the orientation direction is higher than the thermal conductivity in the direction perpendicular to the orientation direction, and the difference is preferably 5 to 100 W / mk.

(9) A production method in which a metal and an inorganic compound forming a eutectic structure with respect to the metal are dissolved and solidified,
Especially in the method of manufacturing a composite material having copper and copper oxide,
Copper or copper and copper oxide as raw materials, oxygen partial pressure is 10 ^-2 P
and a casting step after dissolution in a~10 ³ Pa atmosphere, 8
It is preferable to include a step of performing a heat treatment at 00 ° C. to 1050 ° C. and a step of performing plastic working during cold or hot.

[0028]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS (Embodiment 1) FIG. 1 shows an embodiment of a copper composite insulated wire substrate according to the present invention. As shown in FIG. 1A, it is shown on a copper composite member 1 made of a copper composite material. As shown in FIG. 1A, a conductor foil 3 is placed on a copper composite member 1 made of a copper composite material.
Is an insulated wiring board to which is fixed by an insulating sheet 2. The conductive foil 3 is a copper foil or a copper alloy foil having a thickness of about several tens of microns, and the insulating sheet 2 is a resin having a relatively high thermal conductivity (for example, silica or aluminum powder is mixed to increase the thermal conductivity). (Epoxy resin etc.). FIG.
The conductor pattern 3a is formed by etching the conductor foil 3 of FIG.
FIG. The copper composite insulated wiring board can be used as shown in FIG.
(A) or used in the state of FIG. 1 (b). In addition,
Since the copper composite member 1 contains copper (I) oxide (Cu ₂ O) therein, it is a material having much better machinability than pure copper or the like. Therefore, it is extremely easy to cut a large-sized copper composite insulated wiring board into a small size as shown in FIG. 1 and has high productivity.

The copper composite material used in this embodiment is as follows:
What was manufactured by (E) can be used.

(A) As raw material powder, electrolytic Cu powder having a particle size of 75 μm or less and Cu ₂ O powder having a purity of 3N and a particle size of 1 to ₂ μm were used. Cu powder and Cu ₂ O powder were mixed in the ratio shown in Table 2 to 14
After mixing 00 g, the mixture was mixed in a dry pot mill containing steel balls for 10 hours or more. 150 mixed powder
mm, and 400 to 1 depending on the Cu ₂ O content.
Cold pressed at a pressure of 000 kg / cm ² 150 mm in diameter
A preform having a height of 17 to 19 mm was obtained. Thereafter, the preform was sintered in an argon gas atmosphere and subjected to chemical analysis, structure observation, measurement of thermal expansion coefficient, thermal conductivity, and measurement of Vickers hardness. The sintering temperature was varied between 900 ° C. and 1000 ° C. in accordance with the content of Cu ₂ O, and kept at each temperature for 3 hours. The coefficient of thermal expansion was measured in a temperature range from room temperature to 300 ° C. using a TMA (Thermal Mechanical Analysis) device, and the thermal conductivity was measured by a laser flash method.
The results are shown in Table 1. In addition, the obtained sample No. 4
FIG. 3 shows the microstructure of the sintered compact.

As a result of chemical analysis, the composition of the sintered body was consistent with the composition. Table 1 shows the thermal expansion coefficient and thermal conductivity.
As is clear, it was found that by adjusting the composition ratio of Cu and Cu ₂ O, the composition varied over a wide range, and it was possible to control the thermal characteristics required for the heat sink.

FIG. 2 is a diagram showing the relationship between the thermal conductivity, the coefficient of thermal expansion, the specific resistance and the Cu ₂ O content. As shown in the figure, as the amount of cuprous oxide (CuO ₂ ) increases,
The values of the thermal conductivity and the coefficient of thermal expansion decrease, and conversely, the specific resistance increases. The value of the amount of cuprous oxide (Cu ₂ O) to be set depends on the mounting form of the semiconductor device and the environment in which it is used, but is set to, for example, 50% by volume. In this case, the copper composite material has a thermal expansion coefficient of about 9.7 ppm / K, and has a high thermal conductivity almost equal to that of aluminum (Al). In addition, since this material is not an insulator but a conductor, it can be used as a current-carrying material.

[0033]

[Table 1]

On the other hand, as is clear from FIG. 3 (300-fold), Cu ₂ O agglomerates in the mixing step and grows enlarged in the sintering step, but the particle size is 50 μm or less, and the Cu phase and Cu phase _It has a dense structure in which the ₂ O phase is uniformly dispersed. The white part in the photograph is the Cu phase, and the black part is the Cu ₂ O phase.

As shown in the figure, it is clear that the Cu ₂ O particles are dispersed as irregularly shaped masses in which 99% or more of the entire cross-sectional area ratio is continuous.

As a result of the hardness measurement, the Cu phase was Hv75-8.
0, Cu ₂ O had a hardness of Hv 210 to 230. In addition, as a result of evaluating the machinability by lathe and drill processing,
It was found that the workability was very good, and that the shape was easily imparted.

In this embodiment, cuprous oxide (Cu ₂ O) is used as a raw material powder. However, even if copper dioxide (CuO) is used, it is converted into Cu ₂ O by sintering in the air. The composite material has Cu ₂ O dispersed therein.

(B) Using the same raw material powder as in (A) above,
After mixing 550 g of Cu powder and Cu ₂ O powder at a composition ratio of Cu-55 volume% Cu ₂ O, they were mixed in a V mixer. The mixed powder is poured into a mold having a diameter of 80 mm, and 600 kg /
A cold press was performed at a pressure of cm ² to obtain a preform having a diameter of 80 mm × 22 mm. Thereafter, the preformed body was sintered at 975 ° C. for 3 hours in an argon gas atmosphere. Next, the obtained sintered body was heated to 800 ° C., forged to a forging ratio of 1.8 with a 200-ton press, and then softened and annealed at 500 ° C., and the structure was observed, the heat transfer coefficient and the heat conduction were the same as in Example 1. The rate was measured.

In the forged material, some edge cracks were observed on the side surface, but the other parts were sound. It was found that the copper composite material of the present invention was excellent in plastic workability.

FIG. 4 shows the microstructure (300 times) of a cross section parallel to the forging direction of the forged material.

The Cu phase and Cu ₂ O phase are deformed and oriented in the forging direction, but no defects such as cracks are observed. As shown in the figure, it can be seen that the Cu ₂ O particles become a mass in which 95% or more are continuous and are extended in the direction in which they are extended by plastic working.

Table 2 shows the measurement results of the thermal conductivity by the laser flash method. In the as-sintered state without forging, no anisotropy of the thermal conductivity is recognized. However, anisotropy is generated by forging, and the thermal conductivity in the L direction parallel to the orientation direction (forging direction) of the Cu phase and Cu ₂ O phase is in the C direction (forging direction) perpendicular to the direction. The value is twice or more. In addition, as a result of measuring the coefficient of thermal expansion from room temperature to 300 ° C., almost no anisotropy was observed.
Of the same composition.

[0043]

[Table 2]

(C) Copper and 2N-purity Cu ₂ O powder are shown in Table 3.
The linear expansion coefficient, the thermal conductivity, and the hardness were measured for a composite material which was cast after dissolving the raw materials prepared in the ratios shown in Table 1 in the air. The coefficient of thermal expansion was measured in a temperature range from room temperature to 300 ° C. using a push bar type measuring device with a standard sample being SiO ₂ . The thermal conductivity was measured by a laser flash method. The results are shown in Table 1. In addition, the obtained sample N
The microstructure of o.3 (100 times) is shown in FIG. Field of view is 7
It is 20 × 950 μm. As shown in the figure, the copper oxide is formed in a dendrite shape, and most of the particles have a particle size of 10 to 50 μm, and one lump having a diameter of 100 μm is seen. In addition, there are about 10 rods and dendrites having a diameter of 30 μm or less and a length of 50 μm or more, and particles having a diameter of 0.2 μm or less are formed on the base from the above-mentioned rod and dendrite formed portions. There is a non-formation zone having a width of about 0.5 μm, the portion is dedispersed, and the band is formed in a continuous string.

As is clear from Table 3, the thermal expansion coefficient and the thermal conductivity vary over a wide range by adjusting the composition ratio of Cu and Cu ₂ O. I found that I could control it.

[0046]

[Table 3]

On the other hand, as is clear from FIG. 5, the microstructure of Cu ₂ O forms dendrite, and the Cu phase and Cu ₂
It has a dense structure in which the O 2 phase is uniformly dispersed. The white part in the photograph is the Cu phase, and the black part is the Cu ₂ O phase.

As a result of the hardness measurement, the Cu phase was Hv75-8.
0, Cu ₂ O had a hardness of Hv 210 to 230. In addition, as a result of evaluating the machinability by lathe and drill processing,
It was found that the workability was very good, and that the shape was easily imparted.

(D) Copper and a purity of 3
A raw material prepared by mixing N ₂ Cu ₂ O powder at the ratio shown in Table 4
After melting under various oxygen partial pressures, they were cast to produce composite materials. Observation of the microstructure (100 times) of Sample No. 7 cast after melting in an atmosphere of oxygen partial pressure of 10 ^-2 Pa C
The u ₂ O phase forms dendrites and has a particle size of 5-50.
Most of the particles have a size of μm. The diameter is 30 μm
Below, it is a structure in which approximately 16 rod-like and dendrite-like ones linearly connected to each other with a length of 50 μm or more are formed. One lump having a particle size of 100 μm or more is observed. Most of the bases are formed with a particle size of 0.2 μm or less, and also formed into a string and connected to each other in a network. The formation of fine Cu ₂ O particles at the matrix is shown in FIG.
There is a non-forming zone as well.

[0050]

[Table 4]

FIG. 6 shows the microstructure (magnification: 100 times) of Sample No. 8 which was cast after melting in an atmosphere of an oxygen partial pressure of 10 ³ Pa. As is clear from the photograph, the Cu ₂ O phase forms a dendrite and has a structure oriented in one direction, and the shape and density of the Cu ₂ O phase are changed by changing the raw material and the oxygen partial pressure. I found that I could control it. As shown in the figure, a granular one having a particle size of 5 to 30 μm,
Approximately 33 rods and dendrites having a diameter of 30 μm or less and a length of 50 μm or more are formed. The longest one is about 200 μm. At the base, as in FIG. 5, fine particles having a particle size of 0.2 μm or less have a non-forming zone similar to that of FIG. 1 around the above-mentioned granular, rod-like and dendritic formations. Because it is formed as a whole,
The formation area of the fine particles is reduced.

Table 4 shows the measurement results of the linear expansion coefficient and the thermal conductivity of the two types of composite materials. As a result, in each of the composite materials, anisotropy was recognized in the linear expansion coefficient and the thermal conductivity. The vertical direction is the solidification direction of the casting, and the horizontal direction is the direction horizontal to the solidification direction. The thermal expansion coefficient becomes slightly larger in the vertical direction than in the horizontal direction when the content of Cu ₂ O is 30 vol% or more. Further, the thermal conductivity is 1.1 times or more higher in the vertical direction than in the horizontal direction.

The same result as in the case where oxygen was used as the atmosphere gas was also obtained by bubbling oxygen gas into the raw material melt.

(E) The above (D) sample No. 8 was heated at 900 ° C.
As a result of hot working to a workability of 90%, the workability was sound, and it was found that the composite material of the present invention was excellent in plastic workability. FIG. 7 is a microstructure (100 times) of a cross section parallel to the processing direction of Sample No. 9 shown in Table 5. The orientation becomes remarkable as compared with the as-cast one, and the C
The u ₂ O phase was elongated in the plastic working direction and elongated in one direction, and formed a structure having an aspect ratio in the range of 1 to 20. The rod diameter is 20 μm or less, and most is 1 to 10 μm. Further, about 15 pieces have a length of 100 μm or more. Furthermore, fine particles 2-5
It grows into particles of about μm and disappears. As also shown in Table 5, more remarkable anisotropy was recognized in the coefficient of linear expansion and the thermal conductivity of the sample No. 9. In particular, the thermal conductivity showed a value that was 1.22 times higher in the vertical direction along the rod shape than in the horizontal direction. The thermal expansion coefficient is slightly larger in the vertical direction than in the horizontal direction.

[0055]

[Table 5]

(Embodiment 2) FIG. 8 shows another embodiment of the copper composite insulated wiring board according to the present invention. The figure shows a copper composite member 1 made of a copper composite material and a conductor pattern 3 as in the first embodiment.
a is insulated by an insulating member 4 made of copper oxide (Cu ₂ O).

FIG. 9 shows a method of manufacturing the copper composite insulated wiring board shown in FIG. FIG. 9A shows a copper composite material (Cu / Cu ₂ ) in which copper (Cu) and cuprous oxide (Cu ₂ O) are dispersed.
O) is a copper composite member 1. In the step of FIG. 9B, oxygen is implanted into the surface of the copper composite member 1 by ion implantation, and the entire surface of the copper composite member 1 is first brought to a predetermined depth (a depth of several to several tens of microns). An insulating treatment for forming a copper oxide (Cu ₂ O) layer is performed. That is, the insulating member 4 is formed on the surface of the copper composite member 1. In the step of FIG. 9 (c), the insulating member 4 made of only the copper oxide layer insulated in a reducing atmosphere such as a hydrogen atmosphere has a predetermined depth (several microns or less).
To a pure copper (Cu) layer 3x. The temperature at the time of reduction is several hundred degrees. In the step of FIG. 9D, copper is plated on the pure copper layer 3x to form a thick pure copper layer 3y. Finally, in the step of FIG.
y is patterned into a conductor pattern 3a by etching. (Embodiment 3) Another embodiment of the copper composite insulated wiring board according to the present invention is shown in FIG. This figure differs from FIG. 1 in that the material of the patterned conductor pattern 5 is changed from pure copper or a copper alloy to a copper composite material. Since the thermal expansion coefficient of the copper composite material is closer to that of silicon, which is the material of the semiconductor element, than that of pure copper, the reliability of the solder joint under a heat cycle when the semiconductor element is joined by solder on the conductor pattern is shown in the figure. This is further improved as compared with the case where one insulating substrate is used.

(Embodiment 4) Another embodiment of the copper composite insulated wiring board according to the present invention is shown in FIG. The point that the conductor members 6 and 7 are provided on a part of the surface of the copper composite member 1 via the insulating sheet 2 is different from the insulated wiring board of FIG. That is,
It is characterized in that a part of the conductor members 6, 7 protrudes outward more than the outer periphery of the copper composite member 1. The conductor members 6 and 7 are made of pure copper, a copper alloy, a copper composite material, or the like having a thickness of 100 microns or more. As described later, these conductor members 6 and 7 can be used as a current-carrying member or a heat sink member of a semiconductor element.
The cost performance of a semiconductor device on which a semiconductor element is mounted can be improved.

(Embodiment 5) Another embodiment of the copper composite insulated wiring board according to the present invention is shown in FIG. Conductor member 6a provided on a part of the surface of copper composite member 1 via insulating sheet 2
As shown in the figure, the shape of each of FIGS. 7a and 7a is different from the insulated wiring board of FIG.
When the semiconductor element is joined to the insulated wiring board by soldering and resin-sealed by bending the shape of the conductor members 6a and 7a, the semiconductor device may greatly improve the mountability to other electronic devices. is there. Further, the semiconductor device having the resin-sealed structure can be made more compact.

(Embodiment 6) Another embodiment of the copper composite insulated wiring board according to the present invention is shown in FIG. Conductor member 6b provided on a part of the surface of copper composite member 1 via insulating sheet 2
6 and 7b are different from the insulated wiring board of FIG. 6 in that the shape is bent at a middle portion thereof as shown in the drawing, and a part thereof is disposed perpendicular to the surface of the copper composite member 1. is there. Also in such a case, when the present insulating substrate is applied to a semiconductor device, the same advantages as those in the previous figure can be obtained.

(Embodiment 7) FIG. 14 shows an embodiment of a semiconductor device using the copper composite insulated wiring board shown in Embodiment 1 according to the present invention. As shown in the figure, conductive patterns 3a and 3 are fixed on a copper composite member 1 made of a copper composite material and having a heat sink function using a resinous insulating sheet 2.
This is a semiconductor device in which a semiconductor element is mounted on a copper composite insulated wiring board on which b, 3c and 3d are formed. A semiconductor element (such as an IGBT power element) 12 is joined together with other electronic components 13 to the conductor patterns 3b and 3c via solders 8a and 8b, respectively. The conducting member 9 made of pure copper or copper alloy and the semiconductor element 12 are connected to the conductor 1
1a, the conductor pattern 3a, and the conductor 11b, and are electrically connected. Similarly, the electronic component 22 includes the conductor pattern 3
d, electrically connected to the conducting member 10 via the conducting wire 11c. As shown in the figure, the present semiconductor device is sealed with a resin 14 so that the copper composite member 1 and a part of the current-carrying members 9 and 10 are exposed. Since the copper composite member 1 is partially exposed from the resin 14 and is made of a copper composite material having a high thermal conductivity, the solder 8 a and the conductor pattern 3 are formed.
b, heat generated in the semiconductor element 12 can be efficiently released to the outside via the copper composite member 1. As a result, the heat generation temperature of the semiconductor element 12 can be suppressed to a low value. In addition, the thermal expansion coefficient of the sealing resin 14 is 8 to 15 ppm.
/ K, that is, by matching the coefficient of thermal expansion with the copper composite material, the difference in the coefficient of thermal expansion between the resin 14 and the copper composite member 1 is reduced,
Cracking of the sealing structure can be prevented, and a highly reliable semiconductor device can be obtained. With such a configuration, the reliability of the solder joint can be improved without providing an intermediate material such as molybdenum (Mo) or CIC (Cu-Invar-Cu clad material) between the semiconductor element and the insulated wiring board. As a result, a semiconductor device having high cost performance can be obtained.

A resin-sealed semiconductor device according to the present invention is sealed with a composition containing a resin and 70% by weight or more, preferably 80 to 95% by weight of a spherical quartz powder, wherein the resin is mainly an epoxy resin, A resin containing a silicone polymer in an amount of 20 parts by weight or less, preferably 10 parts by weight or less (including 0 parts by weight) per 100 parts by weight of the epoxy resin is preferable, and a surface-mounted resin-sealed semiconductor device is particularly preferable.

Further, in the present invention, transfer molding is preferably performed using the above-mentioned composition. Spherical quartz powder is part 9
0% by weight or more has a particle size of 0.5 to 100 μm, its particle size distribution is a straight line when represented by an RRS particle size diagram, and its gradient n is 0.6 to 0.95; The cured product preferably has a coefficient of linear expansion of 1.3 × 10 ⁻⁵ / ° C. or less.

The spherical fused silica powder used in the present invention is a high-temperature fused silica powder, which has been previously ground to a predetermined particle size distribution, generated from a thermal spraying apparatus using a combustible gas such as propane, butane, acetylene or hydrogen as a fuel. It is preferable to supply a fixed amount into the flame, melt it, make it spherical, and cool it.

The silicone polymer used in the present invention is a polydimethylsiloxane having a functional group such as an amino group, a carboxyl group, an epoxy group, a hydroxyl group or a pyrimidine group at a terminal or a side chain.

The epoxy resin which is solid at room temperature refers to a cresol novolak type epoxy resin, a phenol novolak type epoxy resin, a bisphenol A type epoxy resin or the like generally used as a semiconductor encapsulating material, and phenol novolak or cresol as a curing agent. Uses novolak resins such as novolak, acid anhydrides such as pyromellitic anhydride and benzophenone anhydride, and requires additional curing accelerators, flexible agents, coupling agents, coloring agents, flame retardants, release agents, etc. Can be blended according to

In this epoxy resin composition, each material was used in an amount of 70%.
The mixture can be kneaded with a biaxial roll or an extruder heated to １００100 ° C. and molded by a transfer press at a mold temperature of 160 to 190 ° C., a molding pressure of 30 to 100 kg / cm ² , and a curing time of 1 to 3 minutes.

Using a spherical filler of n = 0.95 as the filler, the epoxy resin composition shown in Table 6 was kneaded with a biaxial roll heated to 80 ° C. for 10 minutes.

[0069]

[Table 6]

According to this example, the resin composition for semiconductor encapsulation used was excellent in fluidity, had a small coefficient of linear expansion after curing, and a small modulus of elasticity. Thermal stress caused by
It has an excellent effect of obtaining a surface-mounted resin-sealed semiconductor device having excellent crack resistance and connection reliability.

(Eighth Embodiment) FIG. 15 shows another embodiment of the semiconductor device using the copper composite insulated wiring board shown in the first embodiment of the present invention. As shown in FIG.
Are connected to the conductor pattern 3a via the solder 8, and are connected to the copper composite member 1 by a conductor 11a and to the copper composite member 1a by a conductor 11b. The present semiconductor device is composed of copper composite members 1 and 1
a is sealed with a resin 14 so that a part of “a” is exposed. The copper composite member 1 has both a heat sink function and a conduction function of the semiconductor element 12, and can efficiently release heat generated in the semiconductor element 12 to the outside via the solder 8, the conductor pattern 3 a, and the copper composite member 1. . Also in the case of this drawing, the reliability of the solder joint is ensured, and a semiconductor device with high cost performance can be obtained.

Embodiment 9 FIG. 16 shows another embodiment of the semiconductor device using the copper composite insulated wiring board shown in Embodiment 1 of the present invention. As shown in FIG.
Is joined to the conductor member 6a fixed on the copper composite member 1 by the insulating sheet 2 with solder 8. The semiconductor element 12 is the conductor 1
They are connected to the conductor members 6a and 7a via 1a and 11b, respectively. By doing so, the conductor members 6a and 7
a, a voltage and a current are supplied to the semiconductor element 12. The semiconductor element 12 is sealed with the resin 14 so that the conductor members 6a and 7a and a part of the copper composite member 1 are exposed. Since the conductor member 6a is made of the copper composite material having a low coefficient of thermal expansion described in the first embodiment, the reliability of the joint between the semiconductor element 12 and the conductor member 6a by the solder 8 is improved. Even if the conductor member 6a is made of pure copper or a copper alloy, if the thickness is several hundred microns or less, the reliability of the solder joint is similarly secured. Since the conductor member 6a has both an energizing function and a heat sink function, heat generated in the semiconductor element 12 can be released from the solder 8 to the outside via the conductor member 6a. Further, heat generated in the semiconductor element 12 can be efficiently released to the outside even through the copper composite member 1. Even when the semiconductor element 12 is sealed in a compact resin structure with the resin 14 as described above, an increase in the heat generation temperature of the semiconductor element 12 can be further suppressed. Also in the case of this drawing, the reliability of the solder joint can be secured without providing an intermediate material such as molybdenum or CIC, and a semiconductor device with high cost performance can be obtained. Although this drawing shows an example in which the copper composite insulated wiring board shown in FIG. 12 is used, the same effect can be obtained when the copper composite insulated wiring board shown in FIGS. 11 and 13 is applied. In addition, it is possible to support various mounting forms.

(Embodiment 10) FIG. 17 shows another embodiment of a semiconductor device using the copper composite insulated wiring board shown in Embodiment 1 of the present invention. As shown in the figure, the copper composite member 1
A semiconductor element 1 is mounted on a copper composite member insulated wiring board in which conductor members 6 and 7 and a conductor pattern 3a are fixed on the
2 is a semiconductor device in which a cap 15 is bonded with an adhesive 16 such that a space 17 is provided above a semiconductor element 12 after bonding the semiconductor chip 2 with solder 8. In addition, the semiconductor element 12 and the conductor members 6 and 7 are connected by conducting wires 11a and 11b, respectively. In the case of this figure, the heat generated in the semiconductor element 12 is released from the solder 8 to the outside only through the copper composite member 1. Also in the case of this drawing, the reliability of the solder joint can be secured without providing an intermediate material such as molybdenum or CIC between the semiconductor element and the insulated wiring board, and a semiconductor device with high cost performance can be obtained.

Embodiment 11 FIG. 18 shows another embodiment of a semiconductor device using a copper composite insulated wiring board according to the present invention. In this drawing, a copper composite insulated wiring board in which a conductor foil 3 is fixed on a copper composite member 1 with an insulating sheet 2 is used as a well-known metal core board. Bonding to the semiconductor element 1
The heat generated in 2 is efficiently released to the outside via the copper composite member 1. When used as a metal core substrate, the copper composite member 1 may be bent as shown in the figure.

Molybdenum (Mo) or CIC (Cu-Invar-Cu clad material) between the semiconductor element and the insulated wiring board
By using a copper composite material as the substrate material of the insulated wiring board without providing an intermediate material such as such, a highly cost-effective semiconductor device that can ensure the reliability of the solder joints in a severe heat cycle environment Obtainable.

[0076]

According to the present invention, a highly reliable semiconductor device which can be easily manufactured can be obtained.

[Brief description of the drawings]

FIG. 1 is a view showing one embodiment of a copper composite insulated wiring board according to the present invention.

FIG. 2 is a diagram showing material characteristics of a copper composite material.

FIG. 3 is a micrograph of a cross section of the copper composite material of the present invention.

FIG. 4 is a micrograph of a cross section of the copper composite of the present invention.

FIG. 5 is a micrograph of a cross section of the copper composite material of the present invention.

FIG. 6 is a micrograph of a cross section of the copper composite of the present invention.

FIG. 7 is a micrograph of a cross section of the copper composite material of the present invention.

FIG. 8 is a diagram showing another embodiment of the copper composite insulated wiring board according to the present invention.

FIG. 9 is a diagram showing a method of manufacturing the copper composite insulated wiring board of the preceding figure.

FIG. 10 is a view showing another embodiment of the copper composite insulated wiring board according to the present invention.

FIG. 11 is a view showing another embodiment of the copper composite insulated wiring board according to the present invention.

FIG. 12 is a view showing another embodiment of the copper composite insulated wiring board according to the present invention.

FIG. 13 is a view showing another embodiment of the copper composite insulated wiring board according to the present invention.

FIG. 14 is a diagram showing an embodiment of a semiconductor device using a copper composite insulated wiring board according to the present invention.

FIG. 15 is a diagram showing another embodiment of the semiconductor device according to the present invention.

FIG. 16 is a diagram showing another embodiment of the semiconductor device according to the present invention.

FIG. 17 is a diagram showing another embodiment of the semiconductor device according to the present invention.

FIG. 18 is a diagram showing another embodiment of the semiconductor device according to the present invention.

[Explanation of symbols]

1, 1a: copper composite member, 2: insulating sheet, 3: conductor foil,
3a, 3b, 3c, 3d, 5 ... conductor pattern, 3x, 3
y: pure copper layer, 4: insulating member, 6, 6a, 6b, 7, 7
a, 7b: conductor member, 8, 8a, 8b: solder, 9, 10
... energizing members, 11a, 11b, 11c ... conducting wires, 12 ... semiconductor elements, 13 ... electronic components, 14 ... resin, 15 ... caps, 16 ... adhesives, 17 ... space.

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (Reference) H05K 1/02 H01L 23/36 M 1/05 C (72) Inventor Haruo Akahoshi 7-chome, Omikacho, Hitachi City, Ibaraki Prefecture 1 Hitachi, Ltd. Hitachi Research Laboratory (72) Inventor Yasuo Kondo 7-1-1, Omikacho, Hitachi City, Ibaraki Prefecture Hitachi, Ltd. Hitachi Research Laboratory (72) Inventor Kazutaka Okamoto Omikamachi, Hitachi City, Ibaraki Prefecture 7-1-1 1-1 F-term in Hitachi, Ltd. Hitachi Research Laboratory (reference) 5E315 BB04 BB05 BB10 BB14 DD13 GG01 GG22 5E338 AA18 BB65 BB75 CC01 CD05 EE02 EE32 5F036 AA01 BB08 BD01 BD21 5F067 AA03 CA03 EA04

Claims (8)

[Claims] 1. A wiring board, wherein a conductor layer is formed on a copper composite member containing copper oxide via a resin insulating layer or a copper oxide layer. 2. A wiring board, wherein a wiring pattern made of a conductor is formed on a copper composite member containing copper oxide via a resin insulating layer or a copper oxide layer. 3. The composite member according to claim 1, wherein a part of the conductor projects outward beyond the outer periphery of the composite member, or is bent at an intermediate portion thereof, or a portion of the conductor with respect to a surface of the composite member. A wiring board, which is vertically arranged. 4. A semiconductor device having a semiconductor element mounted on the wiring board according to claim 1. 5. The semiconductor device according to claim 4, wherein the semiconductor element is sealed with a resin together with the wiring board, and a part of the composite member and the conductor are exposed from the resin. 6. The semiconductor device according to claim 5, wherein the thermal expansion coefficient of the sealing resin is 8 to 15 ppm / K. 7. The semiconductor device according to claim 4, wherein a cap is bonded to said wiring board so as to form a space above said semiconductor element. 8. A semiconductor device using the wiring substrate according to claim 1 as a metal core substrate on which a semiconductor element is mounted.