JP2001176924A - Semiconductor device, bonding method, electronic equipment and bonding material - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a bonding material which can suitably bond semiconductor devices in a multi-chip package, a bonding method of semiconductor devices, a semiconductor device and electronic equipment. SOLUTION: In a bonding material 20, micro-capsules 30, 32 of sealing material are arranged in paste-like thermosetting resin 22 comprising conductive particles 24. A first reaction heat generating material 26 and a second reaction heat generating material 28 are enclosed in microcapsules 30, 32 respectively. The thermosetting resin 22 which shows adhesion on setting by heating, and the conductive particles 24 which ensures electrical conduction on coming into contact with an electrode, are provided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding method for a semiconductor device, a semiconductor device, an electronic device, and a bonding material for bonding an object to be bonded, and more particularly to a multi-chip package for mounting a plurality of semiconductor chips in one package. (Multi
(Chip Package).

[0002]

2. Description of the Related Art Conventionally, one of bonding methods of a semiconductor device is as follows.
There is a face-down bonding method in which an active surface of a semiconductor chip is placed facing a surface of a substrate. In such a face-down bonding method, since the mounting area can be reduced by directly bonding the electrodes of the semiconductor chip and the electrodes of the substrate, the semiconductor device is bonded by this method. When a semiconductor chip and a substrate are joined by this method, a joining material using a thermosetting resin as a base material is preferably used. As such a bonding material, ACP (Anisotropic Con) having conductive particles inside a paste-like thermosetting resin is used.
ACF (Anisotr) having conductive particles inside a film-like thermosetting resin.
opiConductive Film), NCP having no conductive particles inside a paste-like thermosetting resin
(Non Conductive Paste). All of them have in common that a thermosetting resin serving as a base material exhibits a bonding force by heating. Hereinafter, a method for bonding a semiconductor device using a bonding material of ACP will be described.

FIG. 8 is a process explanatory view showing a conventional method of bonding a semiconductor device using the bonding material 1. As shown in FIG. FIG.
As shown in (a), the bonding material 1 is arranged on the substrate 4. Then, the semiconductor chip 6 is lowered toward the substrate 4. A heating and pressing tool 8 is connected to the back surface of the semiconductor chip 6, and the semiconductor chip 6 is lowered by the heating and pressing tool 8.

Then, the semiconductor chip 6 is lowered to the substrate 4 side, and the electrodes 7 and 5 are arranged to face each other via the bonding material 1 as shown in FIG. At this time, the conductive particles 3 in the thermosetting resin 2 are sandwiched between the electrodes 5 and 7, thereby ensuring conduction between the substrate 4 and the semiconductor chip 6.

Conventionally, a semiconductor chip 6 is mounted on a substrate 4
After being arranged on the upper side, the bonding material 1 is heated. Conventionally, the heating of the bonding material 1 has been performed through the semiconductor chip 6 by the heating and pressing tool 8. Thereby, the thermosetting resin 2 is heated via the semiconductor chip 6,
The thermosetting resin 2 is cured. By curing the thermosetting resin 2 in this way, the substrate 4 and the semiconductor chip 6 are joined, and a semiconductor device is formed.

[0006] Also, when a semiconductor device is joined using an ACF or NCP joining material, the thermosetting resin is heated via the semiconductor chip 6 in the same manner as in the case of the ACP.
The joining of the semiconductor device is performed.

[0007]

However, there have been the following problems in the prior art.

Conventionally, the thermosetting resin 2 serving as a base material has been heated via a semiconductor chip 6 to be joined. Therefore, thermal stress is applied to the semiconductor chip 6 at the time of heating, which may adversely affect the semiconductor chip 6. Further, excess heat is also transmitted to the substrate 4 joined by the thermosetting resin 2, and the substrate 4 may be deformed. In particular, when the substrate was formed of a material such as polyimide, the risk of thermal deformation was remarkable.

In particular, when the semiconductor chip 6 and the substrate 4 of the semiconductor device of the multi-chip package are joined, many semiconductor chips are interposed in order to heat the thermosetting resin 2. For this reason, the amount of heat required for heating the thermosetting resin 2 is greatly increased as compared with the case where a single semiconductor chip is interposed, and the influence on the semiconductor chip, the substrate, and the like to be joined is extremely low. And it has been difficult to ensure the performance of the joined semiconductor device. In addition, a new joining method has been strongly desired as a joining method of a semiconductor device in a multi-chip package because the energy cost increases.

[0010] In addition to the semiconductor device, a bonding material that does not adversely affect the bonding surface due to heat has been desired as a bonding material.

An object of the present invention is to provide a bonding method of a semiconductor device, a semiconductor device, and an electronic apparatus which can prevent an adverse effect due to heat on an object to be bonded by directly heating a bonding material.

In particular, a semiconductor device bonding method capable of suitably bonding a multi-chip package semiconductor device,
It is to provide a semiconductor device and an electronic device.

Another object of the present invention is to provide a bonding material which does not adversely affect a bonding object by heat.

[0014]

In order to achieve the above object, in a method of bonding a semiconductor device according to the present invention, a bonding material having a thermosetting resin as a base material and a reaction heating material in the form of microcapsules are used. The microcapsules are crushed by being sealed and mixed into the bonding material, and pressing the bonding material mixed with the microcapsules against the bonding object. In the above configuration, by causing heat to be generated in the bonding material, it is possible to eliminate the possibility of applying thermal stress to a bonding target such as a semiconductor chip or a substrate. For this reason, it is possible to prevent performance degradation due to heat of the joining object. In particular, it is possible to suitably perform bonding of a semiconductor device of a multi-chip package, which has conventionally been difficult to realize. In addition, as an object to be joined, semiconductor chips or substrates can be preferably used.

[0015] Further, a reaction heating material is sealed with a microcapsule in a bonding material having a thermosetting resin as a base material and disposed on the surface of the bonding material. By pressing the microcapsules, the microcapsules are crushed. In the above-described configuration, by generating heat in the bonding material using the conventional bonding material, it is possible to eliminate the possibility of applying thermal stress to a bonding target such as a semiconductor chip or a substrate. For this reason, it is possible to prevent performance degradation due to heat of the joining object. In particular, it is possible to suitably perform bonding of a semiconductor device of a multi-chip package, which has conventionally been difficult to realize.

Further, the bonding material may include conductive particles, and the size of the microcapsules may be larger than the conductive particles. The conductive particles can conduct the object to be joined, and can crush the microcapsules when sandwiching the conductive particles.

Further, the size of the microcapsule is set to be larger than the joining distance of the joining object.
In the above configuration, the microcapsules can be reliably crushed in the step of bringing the joining object close to each other, and the joining material can be reliably heated.

Further, the reaction heating material is made of a material that reacts with the base material of the bonding material. In the above configuration, the microcapsules can be reacted with the surrounding base material by crushing the microcapsules, so that the bonding force can be reliably exhibited.

Further, a plurality of types of the reaction exothermic materials are used, and the plurality of types of the reaction exothermic materials are made of materials that react with each other. In the above configuration, any material that causes an exothermic reaction may be used, so that the selection of the reaction material according to the application can be facilitated.

Further, the plural kinds of reaction heating materials are sealed in a unit capsule as a pair. In the above configuration, the heat generation efficiency of the pair of reaction heating materials can be increased when the unit capsule is crushed, and the adhesive force of the thermosetting resin can be enhanced.

The semiconductor device according to the present invention has a configuration in which the semiconductor device is joined by the joining method according to the present invention. For this reason, the performance of an object to be joined such as a semiconductor chip and a substrate is maintained, and a high-quality semiconductor device can be obtained.

The electronic device according to the present invention has a configuration in which the semiconductor device according to the present invention is mounted. In the above structure, a high-quality semiconductor device is mounted, so that a high-performance electronic device can be obtained.

In the bonding material according to the present invention, a reaction heating material is encapsulated in a bonding material having a thermosetting resin as a base material with microcapsules and mixed with the bonding material. It was configured to be crushable by pressing an object. In the above configuration, by generating heat in the bonding material, it is possible to eliminate the possibility of applying thermal stress to a bonding target such as a semiconductor chip or a substrate. For this reason, it is possible to prevent performance degradation due to heat of the joining object.

In addition, a reaction heating material is sealed in a bonding material having a thermosetting resin as a base material with microcapsules and disposed on the surface of the bonding material, and the microcapsules can be crushed by pressing an object to be bonded. The structure was formed as follows. In the above configuration, since the conventional ACF, ACP, and NCP can be directly heated, the joining can be performed without adversely affecting the object to be joined by heat.

Further, the bonding material is provided with conductive particles, and the size of the microcapsules is larger than the conductive particles. In the above configuration, conduction of the object to be joined can be achieved by the conductive particles, and the microcapsules can be crushed when the conductive particles are sandwiched.

Further, the size of the microcapsule is set to be larger than the joining distance of the joining object.
In the above configuration, an exothermic reaction can be reliably caused by crushing the microcapsules. In the above configuration, the microcapsules can be reliably crushed at the time of the joining step, and a joining force can be given to the entire joining surface.

The reaction heating material is made of a material that reacts with the base material of the bonding material. In the above configuration, the microcapsules can be reliably crushed in the step of bringing the joining object close to each other, and the joining material can be reliably heated.

Further, a plurality of types of the reaction exothermic materials are used, and the plurality of types of the reaction exothermic materials are made of materials which react with each other. In the above configuration, any material that causes an exothermic reaction may be used, so that the selection of the reaction material according to the application can be facilitated.

Further, the plurality of types of reaction heating materials are sealed in a unit capsule as a pair. In the above configuration, the heat generation efficiency of the pair of reaction heating materials can be increased when the unit capsule is crushed, and the adhesive force of the thermosetting resin can be enhanced.

[0030]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for bonding a semiconductor device according to the present invention,
Embodiments of a semiconductor device, an electronic device, and a bonding material will be described in detail with reference to the drawings.

FIGS. 1 and 2 are process explanatory views showing a bonding material and a method of bonding a semiconductor device in this embodiment. In the present embodiment, the semiconductor device 38 is bonded to the semiconductor chip 38 and the substrate 34 with the bonding material 20 as a bonding target.
The case of 100 will be described. In this embodiment, the case where the semiconductor chip 38 is the lowermost semiconductor chip in a multi-chip package will be described.

The bonding material 20 according to the present embodiment will be described with reference to FIG. The bonding material 20 in the present embodiment has a paste-like thermosetting resin 22 as a base material. The bonding material 20 includes a reaction heating material 2 in an ACP 21 having conductive particles 24 in a thermosetting resin 22.
6 and the reaction heating material 28
(Hereinafter referred to as a first reaction heating material 26, a second reaction heating material 28, a first microcapsule 30, and a second microcapsule 32 as necessary). .

In this embodiment, the thermosetting resin 22
Inside, two types of first reaction heating material 26 and second reaction heating material 28
Are arranged so that the two types of first reaction heating material 26 and second reaction heating material 28 react with each other. Such first
As a material of the reaction heating material 26 and the second reaction heating material 28,
Combinations of acids and alkalis are common, but are not limited thereto.

In the present embodiment, the particle diameter A of the first microcapsules 30 and the second microcapsules 32
Is larger than the distance R between the joining surfaces to be joined (the distance between the surface of the substrate 34 and the active surface of the semiconductor chip 38). In this embodiment, the height of the electrode 36 on the substrate 34 is about 20 μm, and the height of the electrode 40 on the semiconductor chip 38 is about 15 to 18 μm. Therefore, the distance R between the joining surfaces is about 40 μm including the diameter of the conductive particles (3 μm). On the other hand, the particle diameters A and B of the microcapsules 30 and 32 in the present embodiment.
Is about 5 which is larger than the distance R between the joining surfaces (about 40 μm).
It is 0 μm. Accordingly, when the bonding surfaces (the semiconductor chip 38 and the substrate 34 in the present embodiment) are brought close to each other, the microcapsules 30 and 32 can be reliably pressed against the bonding surface and crushed. Therefore, the bonding material 20 can be heated during the bonding process. For this reason,
This eliminates the need to provide a heating step of the bonding material and to use a heating tool as in the related art.

As the thermosetting resin 22, an epoxy resin, a polyurethane resin, or an acrylic resin can be preferably used. The conductive particles 24
Preferred are metal particles such as Ni and solder, particles, and single fiber carbon. Further, as the conductive particles 24, styrene or epoxy resin particles may be plated with Ni or Au. The conductive particles 24 preferably have a particle size of about 3 μm, but the particle size is not limited to this, and can be changed according to the application.

A method of joining the semiconductor device 1100 according to the present embodiment will be described. As shown in FIG.
The bonding material 20 is disposed on the substrate 34. Then, the semiconductor chip 38 is lowered toward the substrate 34 by lowering means (not shown) such that the electrodes 40 of the semiconductor chip 38 face the substrate electrodes 36.

As described above, the microcapsules 30,
The particle diameters A and B of 32 are formed larger than the distance R between the joining surfaces. Therefore, as shown in FIG. 1B, the semiconductor chip 38 contacts the microcapsules 30 and 32 before contacting the substrate 34.

In this embodiment, the semiconductor chip 38
1 is further lowered to the substrate 34 side,
The microcapsules 30, 32 can be crushed as shown in FIG. For this reason, the microcapsules 30,
The first reaction exothermic material 26 and the second exothermic reaction material 28 in the resin 32 can be reliably discharged into the thermosetting resin 22.

Then, as shown in FIG. 2A, the first reaction heating material 2 flowing out of the microcapsules 30 and 32
6. The second reaction heating material 28 causes an exothermic reaction 44 in the thermosetting resin 22. In the present embodiment, even after the microcapsules 30 and 32 are crushed, the reaction heating materials 26 and 28 in the thermosetting resin 22 can be diffused in order to further lower the semiconductor chip 38 toward the substrate 34. . Therefore, the exothermic reaction can be reliably generated in the thermosetting resin. In the present embodiment, the exothermic reaction material 26 and the exothermic reaction material 2
8, the neutralization reaction between acid and alkali is caused. In this embodiment, at this time, the semiconductor chip 3
8 and the electrode 36 of the substrate 34 are connected to the conductive particles 24.
Is connected via. Therefore, the substrate 34 and the electrode 36
While connecting, the thermosetting resin 22 can be cured to exhibit a bonding force, and the manufacturing process of the semiconductor device 1100 can be shortened.

Then, as shown in FIG. 2 (b), the surrounding thermosetting resin 22 which has undergone the exothermic reaction 44 is heated, so that the thermosetting resin 22 in that portion is hardened and the hardened area 4 is hardened.
It becomes 6. When it becomes the hardened area 46, it exerts a bonding force. In the present embodiment, the conductive particles 24 sandwiched between the electrodes 40 of the semiconductor chip 38 exert an extension action, and the position of the surface to be joined is determined by the balance of the forces.

In the embodiment, the case where the microcapsules having the reaction heating material are mixed in the ACP has been described. However, the bonding material for mixing the microcapsules is not limited to the ACP, but may be a film-like ACF.
Alternatively, an NCP having no conductive particles may be used. Further, in the present embodiment, the reaction exothermic materials are reacted with each other, but a material that reacts with the base material may be used as a material of the reaction exothermic material.

As described above, in the method for bonding the semiconductor device 1100 according to the present embodiment, the semiconductor chip 38 and the substrate 34 are not adversely affected by heat because they are heated in the thermosetting resin. Also, particularly in a semiconductor device in a multi-chip package, bonding can be suitably performed. In addition, since it is not necessary to use a heating and pressing tool as in the related art, it is possible to reduce the size of peripheral devices during bonding. Further, since there is no need to apply excessive heat, the size of a device required for bonding can be reduced, and the running cost of bonding the semiconductor device can be reduced. In the present embodiment,
Since the size of the microcapsules is larger than the distance between the joining surfaces, the joining force can be reliably exhibited.

FIG. 3 shows a semiconductor device 1100 joined by the joining method according to the embodiment of the present invention.
As the circuit board 34, an organic substrate such as a glass epoxy substrate is generally used. A bonding portion made of, for example, copper is formed on the circuit board 34 so as to form a desired circuit. Then, by electrically connecting the bonding portion and the external electrode of the semiconductor device 1100, electrical conduction therebetween can be achieved.

Next, a method for bonding the semiconductor device 1100 according to the second embodiment of the present invention will be described with reference to FIG. In the present embodiment, a case will be described in which a microcapsule separate from the conventional ACF 50 is arranged on the surface of the ACF 50 so as to join the objects to be joined. In the present embodiment, as shown in FIG.
The case where the semiconductor chip 200 having the pattern No. 00 is bonded to the substrate 34 will be described. In the present embodiment, a case in which the bonding is performed at the electrode unit 100 of the semiconductor chip 200 will be described. In addition, members common to the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

In this embodiment, the semiconductor chip 20
0 and the substrate 34 are joined by the ACF 50. ACF
Reference numeral 50 denotes a film-like thermosetting resin containing conductive particles 24, as shown in FIG. Such an ACF 50 is arranged at a corresponding position on the substrate 34 (the substrate 34 is not shown in FIG. 4).

In this embodiment, FIG.
The surface of the ACF 50 is covered with a mask 52 as shown in FIG. The mask 52 has an opening 53,
The opening 53 is formed so that the electrode portion 100 of the semiconductor chip 200 faces.

Then, as shown in FIG. 4 (c), microcapsules 30, 32 having reaction heating materials 26, 28
Are arranged in the opening 53. In the present embodiment, the microcapsules 30, 32 have a larger particle size than the conductive particles 24. Therefore, the microcapsules 3
Reference numerals 0 and 32 denote the electrode portions 1 regardless of the presence of the conductive particles 24.
It is crushed by 00 and can exert a bonding force. Of course, as described above, the microcapsules 3
If 0,32 is larger than the distance between the joints, the joining force can be exerted on the entire area.

Then, as shown in FIG. 4D, the mask 52 is removed from the ACF, leaving only the microcapsules 30 and 32 on the ACF 50. Then, FIG.
The semiconductor chip 200 is lowered toward the ACF 50 as shown in FIG. At this time, the electrode section 100 of the semiconductor chip 200 is lowered facing the microcapsules 30 and 32 of the ACF 50. And the joining force can be exhibited. In the subsequent steps, the microcapsules 30 and 32 are crushed and bonded by the ACF 50, as in the steps after FIG. 1B of the first embodiment.

By doing so, the conventional ACF 50
Can be used to directly heat the bonding material,
There is no possibility that the object to be joined is adversely affected by heat. Further, in the present embodiment, since the microcapsules 30 and 32 are arranged only at the positions of the electrodes 100 to be joined, the microcapsules 30 and 32 are arranged only at the necessary positions.
Can be arranged, and the cost can be reduced.

In the embodiment, the case where the conventional ACF is used as the bonding material has been described. However, when the conventional ACP or NCP is used, the semiconductor device can be similarly bonded. In the case where the NCP is used, when the electrodes are joined as described above, there is an advantage that the size is not particularly limited as long as the size can be securely crushed by the electrodes. It can be reliably crushed to exert a bonding force.

In the embodiment, the method of joining semiconductor devices in a multi-chip package has been described. However, the present invention can also be used for joining a single semiconductor chip to a substrate. It can also be used for joining members.

Further, in the embodiment, the first
The reaction heating material 26 and the second reaction heating material 28 are each sealed in a microcapsule. However, the present invention is not limited to this, and the first reaction heating material 26 and the second reaction heating material 28 that make a pair are united as a unit. Alternatively, they may be integrally arranged in a unit capsule. By doing so, if the first reaction heating material 26 and the second reaction heating material 28 in the microcapsule are crushed, the first reaction heating material 26 and the second reaction heating material 28 are immediately reacted, and the heat is generated. Heating of the curable resin can be performed. Further, the sealing material is not limited to microcapsules.

As the type of the substrate 34, a rigid substrate using silicon or the like can be preferably used, but not limited thereto, a flexible substrate using polyimide or the like may be used. The semiconductor chip 38 can be formed of silicon, gallium-arsenic, or the like. As the substrate electrode 36 and the chip electrode 40, a conductive metal such as copper can be preferably used.

FIG. 6 shows a notebook personal computer 1200 as an electronic apparatus including the semiconductor device 1100 of the present invention. The notebook personal computer 1200 is a highly functional semiconductor device 1.
100, the performance can be improved. Note that the electronic device including the semiconductor device 1100 is not limited to the notebook personal computer 1200 described above, and for example, a mobile phone 1300 illustrated in FIG. 7 can be preferably used.

[0055]

According to the method for bonding semiconductor devices of the present invention, by generating heat with the bonding material, it is not necessary to heat the thermosetting resin through the bonding object as in the prior art. Therefore, it is possible to eliminate the possibility of giving a thermal stress to the semiconductor chip or the substrate to be joined. In particular, it is possible to suitably perform bonding of a semiconductor device of a multi-chip package, which has conventionally been difficult to realize.

In the bonding material according to the present invention, since the bonding material can be directly heated, there is no possibility that the bonding surface is adversely affected. In addition, since the microcapsules can be crushed by bringing the bonding surfaces close to each other, the number of bonding steps can be reduced.

[0057]

[Brief description of the drawings]

FIG. 1 is a process explanatory view showing a bonding method of a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a process explanatory view showing a bonding method of the semiconductor device according to the embodiment of the present invention.

FIG. 3 is an explanatory diagram of a semiconductor device according to the present invention.

FIG. 4 is a process explanatory view showing a method for bonding semiconductor devices according to a second embodiment of the present invention.

FIG. 5 is a top view of a semiconductor chip in the LCD.

FIG. 6 is an explanatory diagram of a notebook personal computer including a semiconductor device according to the present invention.

FIG. 7 is an explanatory diagram of a mobile phone including a semiconductor device according to the present invention.

FIG. 8 is a process explanatory view showing a conventional semiconductor device bonding method.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ACP 2 Thermosetting resin 3 Conductive particle 4 Substrate 5 Substrate electrode 6 Semiconductor chip 7 Chip electrode 8 Heating and pressurizing tool 21 ACP 22 Thermosetting resin 24 Conductive particle 26 First reaction heating material 28 Second reaction heating material 30 First 1 microcapsule 32 second microcapsule 34 substrate 36 substrate electrode 38 semiconductor chip 40 chip electrode 44 exothermic reaction 46 hardened region 50 ACF 52 mask 100 electrode 200 semiconductor chip 1000 circuit board 1100 semiconductor device 1200 notebook personal computer 1300 mobile phone

Claims (16)

[Claims] 1. A bonding material comprising a thermosetting resin as a base material,
A semiconductor characterized in that the microcapsules are crushed by sealing a reaction heating material with microcapsules and mixing the bonding materials with the bonding material, and pressing the bonding material mixed with the microcapsules with an object to be bonded. Device joining method. 2. A bonding material comprising a thermosetting resin as a base material,
The microcapsules are crushed by sealing the reaction heat generating material with microcapsules and disposing them on the surface of the bonding material, and pressing the bonding material mixed with the microcapsules with the object to be bonded. A method for bonding a semiconductor device. 3. The bonding material includes conductive particles, and the size of the microcapsules is larger than that of the conductive particles.
13. The method for bonding a semiconductor device according to item 5. 4. The method for bonding a semiconductor device according to claim 1, wherein the size of the microcapsule is larger than a bonding distance of the bonding object. 5. The bonding method for a semiconductor device according to claim 1, wherein the reaction heating material is a material that reacts with a base material of the bonding material. 6. The method according to claim 1, wherein a plurality of types of reaction heating materials are used, and the plurality of types of reaction heating materials react with each other. 7. The method according to claim 6, wherein the plurality of types of reaction heating materials are sealed in a unit capsule as a pair. 8. A semiconductor device joined by the method for joining semiconductor devices according to claim 1. 9. An electronic apparatus comprising the semiconductor device according to claim 8. 10. A bonding material having a thermosetting resin as a base material, a reaction heating material is sealed in microcapsules and mixed with the bonding material, and the microcapsules can be crushed by pressing an object to be bonded. A bonding material characterized by being formed. 11. A bonding material having a thermosetting resin as a base material, a reaction heating material is sealed with microcapsules and arranged on the surface of the bonding material, and the microcapsules can be crushed by pressing an object to be bonded. A bonding material characterized in that it is formed into a material. 12. The bonding material according to claim 10, wherein the bonding material includes conductive particles, and the size of the microcapsules is larger than the conductive particles. 13. The joining material according to claim 10, wherein the size of the microcapsule is larger than a joining distance of the joining object. 14. The bonding material according to claim 10, wherein the reaction heating material is a material that reacts with a base material of the bonding material. 15. The bonding material according to claim 10, wherein a plurality of types of the reaction exothermic materials are used, and the plurality of types of reaction exothermic materials react with each other. 16. The bonding material according to claim 15, wherein the plurality of types of reaction heating materials are sealed in a unit capsule as a pair.