JP2001176660A - Manufacturing method of organic electroluminescent element and organic electroluminescent element - Google Patents
Manufacturing method of organic electroluminescent element and organic electroluminescent elementInfo
- Publication number
- JP2001176660A JP2001176660A JP36016399A JP36016399A JP2001176660A JP 2001176660 A JP2001176660 A JP 2001176660A JP 36016399 A JP36016399 A JP 36016399A JP 36016399 A JP36016399 A JP 36016399A JP 2001176660 A JP2001176660 A JP 2001176660A
- Authority
- JP
- Japan
- Prior art keywords
- organic
- layer
- lower electrode
- metal material
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000010410 layer Substances 0.000 claims abstract description 85
- 239000012044 organic layer Substances 0.000 claims abstract description 44
- 239000007769 metal material Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000005498 polishing Methods 0.000 claims description 11
- 238000005401 electroluminescence Methods 0.000 claims description 9
- 238000004020 luminiscence type Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 42
- 238000004544 sputter deposition Methods 0.000 description 12
- 230000003746 surface roughness Effects 0.000 description 11
- 230000005525 hole transport Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 229910000861 Mg alloy Inorganic materials 0.000 description 3
- 229910007541 Zn O Inorganic materials 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- UPSWHSOSMRAWEH-UHFFFAOYSA-N 2-n,3-n,4-n-tris(3-methylphenyl)-1-n,1-n,2-n,3-n,4-n-pentakis-phenylbenzene-1,2,3,4-tetramine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C(=C(N(C=3C=CC=CC=3)C=3C=C(C)C=CC=3)C(N(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 UPSWHSOSMRAWEH-UHFFFAOYSA-N 0.000 description 1
- -1 8-quinolinol aluminum Chemical compound 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は有機エレクトロルミ
ネッセンス素子の製造方法及び有機エレクトロルミネッ
センス素子に関し、特には有機エレクトロルミネッセン
ス素子が形成される基板と反対側の面から光を取り出
す、いわゆる上面光取り出し構造の有機エレクトロルミ
ネッセンス素子の製造方法及びこれによって得られる有
機エレクトロルミネッセンス素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an organic electroluminescence device and an organic electroluminescence device, and more particularly to a so-called top light extraction structure for extracting light from a surface opposite to a substrate on which the organic electroluminescence device is formed. The present invention relates to a method for producing an organic electroluminescence device and an organic electroluminescence device obtained by the method.
【０００２】[0002]
【従来の技術】有機材料のエレクトロルミネッセンス(e
lectroluminescence：以下ＥＬと記す）を利用した有機
ＥＬ素子は、陽極と陰極との間に有機正孔輸送層や有機
発光層を積層させた有機層を設けてなり、低電圧 直流
駆動による高輝度発光が可能な発光素子として注目され
ている。このような有機ＥＬ素子は、有機発光ダイオー
ド（ＯＬＥＤ：organic light emitting diode）と呼ば
れ、この有機ＥＬ素子を用いた有機ＥＬディスプレイは
液晶ディスプレイに代わる次世代フラットパネルディス
プレイとして有望視されている。2. Description of the Related Art Electroluminescence (e) of organic materials
An organic EL device using electroluminescence (hereinafter referred to as EL) has an organic layer in which an organic hole transport layer and an organic light emitting layer are laminated between an anode and a cathode, and emits high-luminance light by low-voltage DC driving. Is attracting attention as a light-emitting element that can emit light. Such an organic EL element is called an organic light emitting diode (OLED), and an organic EL display using this organic EL element is regarded as a promising next-generation flat panel display replacing a liquid crystal display.
【０００３】図５は、従来の有機ＥＬ素子の一例を示す
断面構成図である。この図に示す有機ＥＬ素子は、透明
ガラスなどからなる基板１０１上に透明導電膜からなる
陽極１０２を形成し、さらにこの陽極１０２上に有機正
孔輸送層ａ、有機発光層ｂ、有機電子輸送層ｃを順次堆
積させてなる有機層１０３を形成した後、この有機層１
０３上に金属からなる陰極１０４を形成してなる。陰極
１０４は、電子が効率的に注入できるように、例えばア
ルミニウムとリチウムとの合金や、マグネシウムと銀と
の合金等の仕事関数の低い金属材料が用いられ、その膜
厚は１００ｎｍ程度に設定される。このような構成の有
機ＥＬ素子においては、有機発光層ｂにおいて電子と正
孔が再結合する際に発光する。そして、有機発光層ｂで
生じた発光光ｈが基板１０１側から取り出される、いわ
ゆる下面光取り出し構造となる。FIG. 5 is a sectional view showing an example of a conventional organic EL device. In the organic EL device shown in this figure, an anode 102 made of a transparent conductive film is formed on a substrate 101 made of transparent glass or the like, and an organic hole transport layer a, an organic light emitting layer b, an organic electron transport After forming the organic layer 103 by sequentially depositing the layer c, this organic layer 1
A cathode 104 made of a metal is formed on the cathode 03. For the cathode 104, a metal material having a low work function such as an alloy of aluminum and lithium or an alloy of magnesium and silver is used so that electrons can be efficiently injected, and the film thickness is set to about 100 nm. You. In the organic EL device having such a configuration, light is emitted when electrons and holes are recombined in the organic light emitting layer b. Then, a so-called lower surface light extraction structure in which emission light h generated in the organic light emitting layer b is extracted from the substrate 101 side.
【０００４】このような有機ＥＬ素子は、応答速度が１
μ秒以下であるので、これを用いて構成される有機ＥＬ
ディスプレイでは、単純マトリックスによるデューティ
ー駆動が可能である。しかし、画素数の増加に伴って高
デューティー化が進んだ場合、十分な輝度を確保するた
めには、有機ＥＬ素子に瞬間的に大電流を供給する必要
があり、素子にダメージが加わり易くなる。[0004] Such an organic EL element has a response speed of 1
μs or less, so organic EL
In the display, duty driving by a simple matrix is possible. However, when the duty ratio increases with the increase in the number of pixels, it is necessary to instantaneously supply a large current to the organic EL element in order to secure sufficient luminance, and the element is easily damaged. .
【０００５】一方、アクティブマトリックス駆動では、
各画素に薄膜トランジスタ（thin film transistor：以
下ＴＦＴと記す）と共に保持容量を形成することで信号
電圧が保持されるので、１フレームの間常に信号電圧に
応じて駆動電流を有機ＥＬ素子に印加できる。このた
め、単純マトリックスのように瞬間的に大電流を供給す
る必要がなく、有機ＥＬ素子に対するダメージを小さく
することができる。On the other hand, in active matrix driving,
By forming a storage capacitor in each pixel together with a thin film transistor (hereinafter referred to as a TFT), a signal voltage is held, so that a drive current can be applied to the organic EL element according to the signal voltage at all times during one frame. Therefore, there is no need to supply a large current instantaneously as in a simple matrix, and damage to the organic EL element can be reduced.
【０００６】ところが、ＴＦＴをスイッチング素子に用
いたアクティブマトリックス型の有機ＥＬディスプレイ
では、ＴＦＴが形成された基板上に絶縁膜を介して有機
ＥＬ素子を形成するため、図５に示した下面光取り出し
構造の有機ＥＬ素子では、ＴＦＴによって有機ＥＬ素子
の開口面積を狭められてしまう。However, in an active matrix type organic EL display using a TFT as a switching element, since the organic EL element is formed on a substrate on which the TFT is formed via an insulating film, the lower surface light extraction shown in FIG. In an organic EL element having a structure, the opening area of the organic EL element is reduced by the TFT.
【０００７】そこで、アクティブマトリックス型の有機
ＥＬディスプレイでは、有機ＥＬ素子の開口率を確保す
るために、基板と反対側から光を取り出す、いわゆる上
面光取り出し構造（以下、上面発光型と記す）の有機Ｅ
Ｌ素子を用いることが有効になる。[0007] Therefore, in an active matrix type organic EL display, in order to secure an aperture ratio of the organic EL element, a light is extracted from the side opposite to the substrate, that is, a so-called top light extraction structure (hereinafter referred to as a top emission type). Organic E
Use of the L element is effective.
【０００８】図６は、上面発光型の有機ＥＬ素子の一例
を示す構成図である。この図に示す有機ＥＬ素子は、基
板１０１’上に金属からなる陽極１０２’が反射層を兼
ねて形成され、この陽極１０２’上に有機正孔輸送層
ａ、有機発光層ｂ、有機電子輸送層ｃを順次積層してな
る有機層１０３が形成され、さらに有機層１０３の上部
に金属薄膜からなる陰極１０４’が形成されている。こ
の陰極１０４’は、光透過率が高く、かつ電子が効果的
に注入できるような仕事関数の低い金属材料、例えばア
ルミニウムとリチウムとの合金や、マグネシウムと銀と
の合金等が用いられ、その膜厚は１０ｎｍ程度に設定さ
れる。このような陰極１０４’上に、陰極１０４’の保
護と配線抵抗の低抵抗化の役目を果たすための透明導電
膜１０５が成膜される。FIG. 6 is a configuration diagram showing an example of a top emission type organic EL device. In the organic EL device shown in this figure, an anode 102 'made of metal is formed on a substrate 101' also as a reflective layer, and an organic hole transport layer a, an organic light emitting layer b, and an organic electron transport layer are formed on the anode 102 '. An organic layer 103 is formed by sequentially stacking the layers c, and a cathode 104 ′ made of a metal thin film is formed on the organic layer 103. The cathode 104 'is made of a metal material having a high light transmittance and a low work function such that electrons can be effectively injected, such as an alloy of aluminum and lithium, or an alloy of magnesium and silver. The film thickness is set to about 10 nm. On such a cathode 104 ', a transparent conductive film 105 for protecting the cathode 104' and reducing the wiring resistance is formed.
【０００９】また図７は、上面発光型の有機ＥＬ素子の
他の一例を示す構成図である。この図に示す有機ＥＬ素
子は、図６に示した有機ＥＬ素子と逆構造のものであ
り、基板１０１’上に金属からなる陰極１０４”が反射
層を兼ねて形成され、この陰極１０４”上に有機電子輸
送層ｃ、有機発光層ｂ、有機正孔輸送層ａを順次積層し
てなる有機層１０３’が形成され、さらに有機層１０
３’の上部に透明導電膜からなる陽極１０２”が形成さ
れている。FIG. 7 is a block diagram showing another example of the top emission type organic EL device. The organic EL element shown in this figure has a structure reverse to that of the organic EL element shown in FIG. 6, and a cathode 104 ″ made of metal is formed on a substrate 101 ′ also as a reflection layer. An organic layer 103 'is formed by sequentially laminating an organic electron transport layer c, an organic light emitting layer b, and an organic hole transport layer a.
An anode 102 ″ made of a transparent conductive film is formed above 3 ′.
【００１０】これらの図に示すような有機ＥＬ素子を製
造するには、スパッタ法、抵抗加熱蒸着法、電子ビーム
蒸着法などの様々な方法から適宜選択された方法によっ
て、陽極１０２’または陰極１０４’となる金属材料層
を基板１０１’上に形成した後、この金属材料層をパタ
ーニングすることによって陽極１０２’または陰極１０
４”等の金属下部電極を形成し、次いで各有機層１０
３，１０３’を形成した後、この上部に陰極１０４’や
陽極１０２”等の上部電極を形成する。In order to manufacture an organic EL device as shown in these figures, an anode 102 'or a cathode 104 is appropriately selected from various methods such as a sputtering method, a resistance heating evaporation method, and an electron beam evaporation method. After forming a metal material layer to be ′ on the substrate 101 ′, the metal material layer is patterned to form the anode 102 ′ or the cathode 10 ′.
A metal lower electrode such as 4 "is formed and then each organic layer 10
After forming 3,103 ', upper electrodes such as the cathode 104' and the anode 102 "are formed thereon.
【００１１】[0011]
【発明が解決しようとする課題】ところが、スパッタ
法、抵抗加熱蒸着法、電子ビーム蒸着法などの何れの成
膜方法で成膜された金属材料層であっても、その結晶構
造は多結晶構造になることが多い。このため、この金属
材料層からなる金属下部電極（すなわち、陽極１０２’
や陰極１０４”）は、表面荒さが大きく表面に突起を有
するものになる。これにより、この下部電極上に設けら
れる有機層は、突起の部分だけ局部的に膜厚が薄くなる
ため、この有機層を挟んで設けられる金属下部電極と上
部電極の距離が局所的に短くなり、この部分に電解が集
中して漏れ電流が発生する。However, even if a metal material layer is formed by any of a film forming method such as a sputtering method, a resistance heating evaporation method, and an electron beam evaporation method, its crystal structure is a polycrystalline structure. Often becomes. Therefore, the metal lower electrode (that is, the anode 102 ′) made of the metal material layer is used.
And the cathode 104 ″) have a large surface roughness and have projections on the surface. As a result, the thickness of the organic layer provided on the lower electrode is locally reduced only at the projections. The distance between the metal lower electrode and the upper electrode provided sandwiching the layer is locally shortened, and the electrolysis is concentrated on this portion to generate a leakage current.
【００１２】この漏れ電流は、有機ＥＬ素子の発光には
寄与しない電流であり、漏れ電流の発生によって有機Ｅ
Ｌ素子の発光効率が低下する。そして、さらに漏れ電流
が極度に集中した場合には、その部分で金属下部電極と
上部電極が短絡して有機ＥＬ素子が発光しなくなり、有
機ＥＬディスプレイにおいて、いわゆるダークスポット
とよばれる非発光点を生じる要因になる。This leakage current is a current that does not contribute to the light emission of the organic EL element.
The luminous efficiency of the L element decreases. When the leakage current further concentrates extremely, the metal lower electrode and the upper electrode are short-circuited at that portion, and the organic EL element does not emit light. In the organic EL display, a non-light emitting point called a so-called dark spot is formed. Is a factor that arises.
【００１３】そこで本発明は、漏れ電流のない安定した
発光効率を維持できる有機ＥＬ素子の製造方法及び有機
ＥＬ素子を提供することを目的とする。Accordingly, an object of the present invention is to provide a method of manufacturing an organic EL device capable of maintaining stable luminous efficiency without leakage current, and an organic EL device.
【００１４】[0014]
【課題を解決するための手段】上記目的を達成するため
になされた本発明の有機ＥＬ素子の製造方法は、基板上
に、金属材料層からなる金属下部電極、有機発光層を備
えた有機層及び光を透過させる上部電極を順次形成する
有機ＥＬ素子の製造方法において、有機層を形成する前
に、金属下部電極を構成する金属材料層の表面を鏡面研
磨する工程を行うことを特徴としている。In order to achieve the above object, a method for manufacturing an organic EL device according to the present invention is directed to an organic layer having a metal lower electrode made of a metal material layer and an organic light emitting layer on a substrate. And a method of manufacturing an organic EL element in which an upper electrode that transmits light is sequentially formed, wherein a step of mirror-polishing the surface of a metal material layer constituting a metal lower electrode is performed before forming an organic layer. .
【００１５】また、本発明の有機ＥＬ素子は、基板上
に、金属材料層からなる金属下部電極、有機発光層を備
えた有機層及び光を透過させる上部電極を順次設けてな
る有機ＥＬ素子において、金属下部電極は鏡面研磨され
た表面を有することを特徴としている。Further, the organic EL device of the present invention is an organic EL device in which a metal lower electrode made of a metal material layer, an organic layer having an organic light emitting layer, and an upper electrode for transmitting light are sequentially provided on a substrate. The metal lower electrode has a mirror-polished surface.
【００１６】このような有機ＥＬ素子の製造方法及び有
機ＥＬ素子では、鏡面研磨によって表面粗さが小さく抑
えられ、突起が除去された金属下部電極の表面上に、有
機層が設けられることになる。このため、この有機層を
挟んで設けられる金属下部電極と上部電極との間に、間
隔が局部的に狭められた部分が形成されることはなく、
金属下部電極−上部電極間における局部的な漏れ電流の
発生を防止することができる。In such a method for manufacturing an organic EL device and the organic EL device, the surface roughness is suppressed to a small level by mirror polishing, and an organic layer is provided on the surface of the metal lower electrode from which the protrusions have been removed. . For this reason, between the metal lower electrode and the upper electrode provided with the organic layer interposed therebetween, a locally narrowed portion is not formed,
Local leakage current between the metal lower electrode and the upper electrode can be prevented from occurring.
【００１７】[0017]
【発明の実施の形態】以下、本発明の有機ＥＬ素子の製
造方法及び有機ＥＬ素子の実施の形態を図面に基づいて
詳細に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a method for manufacturing an organic EL device and an embodiment of the organic EL device according to the present invention will be described in detail with reference to the drawings.
【００１８】（第１実施形態）図１は、本発明の第１実
施形態を説明するための断面工程図であり、以下にこの
図を用いて本発明の第１実施形態を製造方法から順に説
明する。(First Embodiment) FIG. 1 is a sectional process view for explaining a first embodiment of the present invention. Hereinafter, the first embodiment of the present invention will be described in order from a manufacturing method using this figure. explain.
【００１９】先ず、図１（１）に示すように、基板１を
イソプロピルアルコール（以下、ＩＰＡと記す）に浸漬
し、超音波による洗浄を行う。この基板１は、材質が限
定されるものではなく、例えばガラス基板、シリコン基
板、可撓性フィルム基板等の中から適宜選択されたもの
を用いる。First, as shown in FIG. 1A, the substrate 1 is immersed in isopropyl alcohol (hereinafter, referred to as IPA) and cleaned by ultrasonic waves. The material of the substrate 1 is not limited, and for example, a substrate appropriately selected from a glass substrate, a silicon substrate, a flexible film substrate and the like is used.
【００２０】次に、洗浄済みの基板１上に、スパッタ法
またはその他の成膜方法によって金属材料層２を形成す
る。この金属材料層２は、有機ＥＬ素子の陽極となる下
部電極を構成するためのものであり、金(Ａｕ）、プラ
チナ(Ｐｔ）、ニッケル（Ｎｉ）、銅（Ｃｕ）、タング
ステン（Ｗ）、クロム（Ｃｒ）等の仕事関数の大きい物
質を用いることとする。Next, a metal material layer 2 is formed on the cleaned substrate 1 by a sputtering method or another film forming method. This metal material layer 2 is for constituting a lower electrode serving as an anode of the organic EL element, and includes gold (Au), platinum (Pt), nickel (Ni), copper (Cu), tungsten (W), A substance having a large work function such as chromium (Cr) is used.
【００２１】次いで、図１（２）に示すように、金属材
料層２の表面を鏡面研磨し、この金属材料層２の表面の
微小な突起を除去して表面粗さを小さく抑える。この
際、金属材料層２の表面粗さの最大高さ（Ｒmax）が５
ｎｍよりも小さくなるように、好ましくは最大高さ（Ｒ
max）が２ｎｍよりも小さくなるように、例えばポリッ
シング、ラッピング、ＣＭＰ（Chemical Mechanical Po
lishing）等から適宜選択された研磨方法、さらにはこ
れらの研磨方法とエッチングとを適宜組み合わせた研磨
方法によって、金属材料層２の表面を鏡面研磨する。
尚、金属材料層２の表面粗さの最大高さ（Ｒmax）は、
日本工業規格（ＪＩＳ）−ＢＯ６０１において定義され
る値であることする。Next, as shown in FIG. 1 (2), the surface of the metal material layer 2 is mirror-polished, and minute projections on the surface of the metal material layer 2 are removed to reduce the surface roughness. At this time, the maximum height (Rmax) of the surface roughness of the metal material layer 2 is 5
nm, preferably the maximum height (R
max) is smaller than 2 nm, for example, polishing, lapping, CMP (Chemical Mechanical Po
lishing) and the like, and a polishing method appropriately combining these polishing methods and etching is used to mirror-polish the surface of the metal material layer 2.
The maximum height (Rmax) of the surface roughness of the metal material layer 2 is as follows:
It is a value defined in Japanese Industrial Standards (JIS) -BO601.
【００２２】以上の後、必要に応じてこの金属材料層２
をパターニングすることによって（図示省略）、有機Ｅ
Ｌ素子の陽極として金属材料層２からなる金属下部電極
（以下、陽極下部電極と記す）２ａを得る。After the above, if necessary, the metal material layer 2
(Not shown) by patterning the organic E
A metal lower electrode (hereinafter, referred to as an anode lower electrode) 2a made of a metal material layer 2 is obtained as an anode of the L element.
【００２３】次に、図１（３）に示すように、この陽極
下部電極２ａを覆う状態で、基板１上に絶縁膜３を形成
する。この絶縁膜３は、例えば酸化シリコン（Ｓｉ
Ｏ2）からなり、スパッタリング法等によって形成す
る。しかる後、リソグラフィー法によって形成したレジ
ストパターン（図示省略）をマスクに用いて絶縁膜３を
ウェットエッチングする。これによって、図２の平面図
に示すように、例えば絶縁膜を３０ｍｍ×３０ｍｍの大
きさにパターニングすると共に、各絶縁膜３のパターン
内に２ｍｍ×２ｍｍ程度の開口部３ａを形成する。Next, as shown in FIG. 1C, an insulating film 3 is formed on the substrate 1 so as to cover the anode lower electrode 2a. The insulating film 3 is made of, for example, silicon oxide (Si
O 2 ) and is formed by a sputtering method or the like. Thereafter, the insulating film 3 is wet-etched using a resist pattern (not shown) formed by lithography as a mask. Thereby, as shown in the plan view of FIG. 2, for example, the insulating film is patterned into a size of 30 mm × 30 mm, and an opening 3 a of about 2 mm × 2 mm is formed in the pattern of each insulating film 3.
【００２４】以上の後、図１（４）に示すように、絶縁
膜３の開口部３ａ底面を覆う状態で、絶縁膜３上に有機
層４を形成する。この際、真空蒸着装置のチャンバ内に
基板１を搬入し、チャンバ内の圧力を５×１０-5Ｐａ程
度にまで減圧した後、抵抗加熱法によって有機層４を形
成する。この有機層４は、例えば有機正孔注入層４１、
有機正孔輸送層４２、電子輸送層を兼ねる有機発光層４
３を順に堆積させたものとする。Thereafter, as shown in FIG. 1D, an organic layer 4 is formed on the insulating film 3 so as to cover the bottom of the opening 3a of the insulating film 3. At this time, the substrate 1 is carried into the chamber of the vacuum evaporation apparatus, the pressure in the chamber is reduced to about 5 × 10 −5 Pa, and then the organic layer 4 is formed by the resistance heating method. The organic layer 4 includes, for example, an organic hole injection layer 41,
Organic hole transport layer 42, organic light emitting layer 4 also serving as electron transport layer
3 are sequentially deposited.
【００２５】この場合、有機正孔注入層４１としては、
例えばｍ−ＭＴＤＡＴＡ〔４,４’,４”トリス（３−メ
チルフェニルフェニルアミノ）トリフェニルアミン〕を
３０ｎｍの膜厚で堆積させる。また、有機正孔輸送層４
２としては、例えばα−ＮＰＤ（α−ナフチルフェニル
ジアミン）を２０ｎｍの膜厚で堆積させる。さらに、電
子輸送層を兼ねる有機発光層４３としては、Ａｌｑ３
（８−キノリノールアルミニウム錯体）を例えば５０ｎ
ｍの膜厚で堆積させる。In this case, as the organic hole injection layer 41,
For example, m-MTDATA [4,4 ', 4 "tris (3-methylphenylphenylamino) triphenylamine] is deposited to a thickness of 30 nm.
As No. 2, for example, α-NPD (α-naphthylphenyldiamine) is deposited to a thickness of 20 nm. Further, as the organic light emitting layer 43 also serving as an electron transport layer, Alq3
(8-quinolinol aluminum complex)
m.
【００２６】以上の後、同一のチャンバ内にての蒸着処
理によって、この有機層４上に、有機ＥＬ素子の陰極と
なる上部電極（以下、陰極上部電極と記す）５を形成す
る。この陰極上部電極５は、アルミニウム（Ａｌ）とリ
チウム（Ｌｉ）との合金や、マグネシウム（Ｍｇ）と銀
（Ａｇ）との合金等の仕事関数の小さい材料で構成さ
れ、有機発光層４３での発光光が透過する程度の膜厚に
形成されることとする。After the above, an upper electrode (hereinafter, referred to as a cathode upper electrode) 5 serving as a cathode of the organic EL element is formed on the organic layer 4 by a vapor deposition process in the same chamber. The cathode upper electrode 5 is made of a material having a small work function such as an alloy of aluminum (Al) and lithium (Li) or an alloy of magnesium (Mg) and silver (Ag). It is assumed that the film is formed to a thickness such that the emitted light is transmitted.
【００２７】次に、この陰極上部電極５上に、透明導電
膜６を形成する。この透明導電膜６は、例えばスパッタ
法によって成膜することとし、好ましくはＩｎ−Ｚｎ−
Ｏ（インジウムと亜鉛の酸化物）系の材料を用いること
とする。Ｉｎ−Ｚｎ−Ｏ系材料は、室温成膜でも十分に
抵抗値の低い膜が得られ、その電気抵抗率は５００μΩ
・ｃｍ程度になる。これに対して、透明導電膜として一
般的に用いられているＩＴＯ（Indium Tin Oxide）を室
温成膜した場合には、その電気抵抗率は１２００μΩ・
ｃｍ程度と高い。このため、Ｉｎ−Ｚｎ−Ｏ系の材料を
透明導電膜６として用いることで、抵抗値の低い透明導
電膜６を下地に熱ダメージを与えることなく形成するこ
とが可能になる。Next, a transparent conductive film 6 is formed on the cathode upper electrode 5. The transparent conductive film 6 is formed by, for example, a sputtering method, and is preferably made of In-Zn-
An O (oxide of indium and zinc) material is used. With the In-Zn-O-based material, a film with a sufficiently low resistance can be obtained even at room temperature, and its electric resistivity is 500 μΩ.
・ It is about cm. On the other hand, when ITO (Indium Tin Oxide), which is generally used as a transparent conductive film, is formed at room temperature, its electrical resistivity is 1200 μΩ ·
cm and high. Therefore, by using an In—Zn—O-based material as the transparent conductive film 6, it is possible to form the transparent conductive film 6 having a low resistance value without causing thermal damage to the base.
【００２８】このようなＩｎ−Ｚｎ−Ｏ系の材料からな
る透明導電膜６を形成するには、基板１をスパッタ装置
のチャンバ内へ移送した後、成膜の前処理として、基板
１とスパッタターゲットとの間のシャッタを閉じた状態
でチャンバ内の大気開放によるターゲットの汚染を除去
するためのクリーニングスパッタを行う。その後、ター
ゲットと基板１との間のシャッタを開放して、基板１上
に透明導電膜６を形成する。この際、スパッタガスとし
ては、アルゴン（Ａｒ）と酸素（Ｏ2）の混合ガスを用
い、基板１を室温に保持する。また、成膜の初期段階で
は、有機層４へのダメージを低減するため、比較的低電
力（例えばＲＦ３０Ｗ）で２０分のスパッタリングを行
い、次の段階では、電力を増加させ（例えばＲＦ１００
Ｗ）て４０分間のスパッタリングを行う。これによっ
て、有機層４にスパッタダメージが加わることを防止し
ながら、短時間で透明導電膜６を成膜する。In order to form such a transparent conductive film 6 made of an In—Zn—O-based material, the substrate 1 is transferred into a chamber of a sputtering apparatus, and the substrate 1 and the With the shutter between the target and the target closed, cleaning sputtering is performed to remove contamination of the target caused by opening the atmosphere in the chamber. After that, the shutter between the target and the substrate 1 is opened to form the transparent conductive film 6 on the substrate 1. At this time, a mixed gas of argon (Ar) and oxygen (O 2 ) is used as a sputtering gas, and the substrate 1 is kept at room temperature. In the initial stage of film formation, sputtering is performed at a relatively low power (for example, RF 30 W) for 20 minutes in order to reduce damage to the organic layer 4, and in the next stage, the power is increased (for example, RF 100
W) and perform sputtering for 40 minutes. Thus, the transparent conductive film 6 is formed in a short time while preventing the organic layer 4 from being damaged by sputtering.
【００２９】以上によって、絶縁膜３の各開口部３ａ
に、有機ＥＬ素子が形成される。この有機ＥＬ素子は、
陽極下部電極２ａが反射膜となり、基板１と反対側（す
なわち、陰極上部電極５側）から光ｈを取り出す、いわ
ゆる上面発光型の有機ＥＬ素子となる。As described above, each opening 3a of the insulating film 3
Then, an organic EL element is formed. This organic EL element
The anode lower electrode 2a serves as a reflection film, and a so-called top emission type organic EL element in which light h is extracted from the side opposite to the substrate 1 (that is, the cathode upper electrode 5 side).
【００３０】このようにして得られた有機ＥＬ素子は、
鏡面研磨によって表面粗さが小さく抑えられた陽極下部
電極２ａの表面上に、有機層４が設けられることにな
る。このため、有機層４の膜厚が均一化され、有機層４
を挟んで設けられる陽極下部電極２ａと陰極上部電極５
との間隔が局部的に狭められた部分が生じることが防止
される。したがって、陽極下部電極２ａ−陰極上部電極
５間における局部的な漏れ電流の発生を防止することが
できる。The organic EL device thus obtained is
The organic layer 4 is provided on the surface of the anode lower electrode 2a whose surface roughness is suppressed to a small level by mirror polishing. For this reason, the film thickness of the organic layer 4 is made uniform,
Anode lower electrode 2a and cathode upper electrode 5
Is prevented from occurring in a portion where the distance between them is locally narrowed. Therefore, it is possible to prevent local leakage current from occurring between the anode lower electrode 2a and the cathode upper electrode 5.
【００３１】この結果、有機ＥＬ素子の発光効率を維持
することが可能になる。また、極度な漏れ電流の集中に
よる陽極下部電極２ａ−陰極上部電極５間の短絡を防止
することができ、有機ＥＬ素子を用いた有機ＥＬディス
プレイにおけるダークスポット（非発光点）の発生を防
止することが可能になる。As a result, it is possible to maintain the luminous efficiency of the organic EL device. In addition, it is possible to prevent a short circuit between the anode lower electrode 2a and the cathode upper electrode 5 due to excessive concentration of leakage current, thereby preventing a dark spot (non-light emitting point) from occurring in an organic EL display using an organic EL element. It becomes possible.
【００３２】（第２実施形態）図３は、本発明の第２実
施形態を説明するための断面図である。この図に示す第
２実施形態の有機ＥＬ素子と、第１実施形態の有機ＥＬ
素子との異なるところは、有機層４’の構成にあり、そ
の他の構成は同様であることとする。(Second Embodiment) FIG. 3 is a sectional view for explaining a second embodiment of the present invention. The organic EL device of the second embodiment shown in FIG.
The difference from the element lies in the structure of the organic layer 4 ', and the other structures are the same.
【００３３】すなわち、この図に示す有機ＥＬ素子の有
機層４’は、有機正孔輸送層４２と有機発光層４３との
間に、有機正孔ブロック層４５を設けた構成になってい
る。That is, the organic layer 4 ′ of the organic EL device shown in this figure has a configuration in which an organic hole blocking layer 45 is provided between the organic hole transport layer 42 and the organic light emitting layer 43.
【００３４】このような構成の有機ＥＬ素子を形成する
には、第１実施形態において図１（１）〜図１（３）を
用いて説明したと同様に、基板１上の金属材料層２の表
面を金属研磨した後、必要に応じてこの金属材料層２を
パターニングすることで陽極下部電極２ａを形成し、次
いで、この陽極下部電極２ａ上に開口部３ａを有する絶
縁膜３を形成する。In order to form an organic EL element having such a structure, the metal material layer 2 on the substrate 1 is formed in the same manner as described with reference to FIGS. 1A to 1C in the first embodiment. After polishing the surface of the metal, the metal material layer 2 is patterned as necessary to form an anode lower electrode 2a, and then an insulating film 3 having an opening 3a is formed on the anode lower electrode 2a. .
【００３５】以上の後、第１実施形態で図１（４）を用
いて説明したと同様の真空蒸着法にて、絶縁膜３の開口
部３ａ底面を覆う状態で絶縁膜３上に有機層４’を形成
する。この際、有機正孔注入層４１、有機正孔輸送層４
２、有機正孔ブロック層４５、有機電子輸送層を兼ねる
有機発光層４３を順に堆積させる。After that, an organic layer is formed on the insulating film 3 by the same vacuum deposition method as that described in the first embodiment with reference to FIG. 4 'is formed. At this time, the organic hole injection layer 41 and the organic hole transport layer 4
2. An organic hole blocking layer 45 and an organic light emitting layer 43 also serving as an organic electron transport layer are sequentially deposited.
【００３６】この場合、有機正孔注入層４１としては、
例えばｍ−ＭＴＤＡＴＡを３０ｎｍの膜厚で堆積させ
る。また、有機正孔輸送層４２としては、例えばα−Ｎ
ＰＤを２０ｎｍの膜厚で堆積させる。そして、有機正孔
ブロック層４５としては、例えばバソクロプインを１２
ｎｍの膜厚で堆積させる。さらに、有機電子輸送層を兼
ねる有機発光層４３としては、例えばＡｌｑ３を３０ｎ
ｍの膜厚で堆積させる。In this case, as the organic hole injection layer 41,
For example, m-MTDATA is deposited to a thickness of 30 nm. The organic hole transport layer 42 may be, for example, α-N
PD is deposited to a thickness of 20 nm. As the organic hole blocking layer 45, for example,
Deposit with a thickness of nm. Further, as the organic light emitting layer 43 also serving as an organic electron transporting layer, for example, Alq3 is 30 n
m.
【００３７】以上の後、第１実施形態と同様にして、有
機層４’上に陰極上部電極５及びこの保護膜となる透明
導電膜６を形成し、これによって、絶縁膜３の各開口部
３ａに有機ＥＬ素子を得る。After the above, a cathode upper electrode 5 and a transparent conductive film 6 serving as a protective film are formed on the organic layer 4 'in the same manner as in the first embodiment. An organic EL device is obtained in 3a.
【００３８】この有機ＥＬ素子は、第１実施形態と同様
に、金属材料層２からなる陽極下部電極２ａが反射膜と
なり、基板１と反対側（すなわち、陰極上部電極５側）
から光ｈを取り出す、いわゆる上面発光型の有機ＥＬ素
子となる。In this organic EL device, as in the first embodiment, the anode lower electrode 2a made of the metal material layer 2 serves as a reflection film, and is opposite to the substrate 1 (ie, the cathode upper electrode 5 side).
It is a so-called top-emission type organic EL element that extracts light h from the substrate.
【００３９】また、このようにして得られた有機ＥＬ素
子は、鏡面研磨によって表面粗さが小さく抑えられた陽
極下部電極２ａの表面上に、有機層４が設けられたもの
になる。このため、第１実施形態の有機ＥＬ素子と同様
に、発光効率を維持することが可能で、かつこの有機Ｅ
Ｌ素子を用いた有機ＥＬディスプレイにおけるダークス
ポット（非発光点）の発生を防止することが可能にな
る。The organic EL device thus obtained has the organic layer 4 provided on the surface of the anode lower electrode 2a whose surface roughness is suppressed to a small value by mirror polishing. Therefore, similarly to the organic EL device of the first embodiment, the luminous efficiency can be maintained, and the organic EL element can be used.
It is possible to prevent the occurrence of dark spots (non-light emitting points) in an organic EL display using an L element.
【００４０】（第３実施形態）図４は、本発明の第３実
施形態を説明するための断面図である。この図に示す第
３実施形態の有機ＥＬ素子と、第１実施形態の有機ＥＬ
素子との異なるところは、下部電極と上部電極の構成に
ある。(Third Embodiment) FIG. 4 is a sectional view for explaining a third embodiment of the present invention. The organic EL device of the third embodiment shown in FIG.
The difference from the element lies in the configuration of the lower electrode and the upper electrode.
【００４１】すなわち、この図に示す有機ＥＬ素子で
は、下部電極が陰極として形成され、上部電極が陽極と
して形成された構成になっている。このため、有機層
は、第1実施形態や第２実施形態の有機層と逆の積層構
造になる。That is, the organic EL device shown in this figure has a configuration in which the lower electrode is formed as a cathode and the upper electrode is formed as an anode. For this reason, the organic layer has a stacked structure opposite to the organic layer of the first embodiment or the second embodiment.
【００４２】この有機ＥＬ素子を形成するには、先ず、
第１実施形態と同様に洗浄された基板１上に、スパッタ
法またはその他の成膜方法によって金属材料層２’を形
成する。この金属材料層２’は、有機ＥＬ素子の陰極と
なる金属下部電極を構成するためのものであり、アルミ
ニウム（Ａｌ）とリチウム（Ｌｉ）との合金や、マグネ
シウム（Ｍｇ）と銀（Ａｇ）との合金等の仕事関数の小
さい材料を用いることとする。To form this organic EL device, first,
A metal material layer 2 'is formed on the cleaned substrate 1 by a sputtering method or another film forming method in the same manner as in the first embodiment. This metal material layer 2 ′ is for constituting a metal lower electrode that serves as a cathode of the organic EL element, and is made of an alloy of aluminum (Al) and lithium (Li), magnesium (Mg) and silver (Ag). A material having a small work function, such as an alloy with the above, is used.
【００４３】次いで、図４（２）に示すように、金属材
料層２’の表面を鏡面研磨し、この金属材料層２’の表
面の微小な突起を除去して表面粗さを小さく抑える。こ
の際、第１実施形態と同様に、金属材料層２’の表面粗
さの最大高さ（Ｒmax）が５ｎｍよりも小さくなるよう
に、好ましくは最大高さ（Ｒmax）が２ｎｍよりも小さ
くなるように、金属材料層２’の表面を鏡面研磨する。Next, as shown in FIG. 4 (2), the surface of the metal material layer 2 ′ is mirror-polished, and minute projections on the surface of the metal material layer 2 ′ are removed to reduce the surface roughness. At this time, similarly to the first embodiment, the maximum height (Rmax) of the surface roughness of the metal material layer 2 ′ is smaller than 5 nm, preferably the maximum height (Rmax) is smaller than 2 nm. As described above, the surface of the metal material layer 2 'is mirror-polished.
【００４４】以上の後、必要に応じてこの金属材料層
２’をパターニングすることによって（図示省略）、有
機ＥＬ素子の陰極陽極として金属材料層２からなる金属
下部電極（以下、陰極下部電極と記す）２ａ’を得る。Thereafter, the metal material layer 2 ′ is patterned as necessary (not shown) to form a metal lower electrode (hereinafter referred to as a cathode lower electrode) made of the metal material layer 2 as a cathode anode of the organic EL device. 2) is obtained.
【００４５】次に、図４（３）に示すように、第１実施
形態と同様にして、この陰極下部電極２ａ’を覆う状態
で、基板１上に絶縁膜３を形成し、この絶縁膜３に開口
部３ａを形成する。Next, as shown in FIG. 4C, an insulating film 3 is formed on the substrate 1 so as to cover the cathode lower electrode 2a 'in the same manner as in the first embodiment. 3, an opening 3a is formed.
【００４６】以上の後、図４（４）に示すように、絶縁
膜３の開口部３ａ底面を覆う状態で、絶縁膜３上に有機
層４”を形成する。この際、例えば、第１実施形態と同
様の真空蒸着によって、第１実施形態の有機層の積層順
と逆の順に、すなわち有機電子輸送層を兼ねる有機発光
層４３、有機正孔輸送層４２、有機正孔注入層４１を順
に堆積させる。Thereafter, as shown in FIG. 4 (4), an organic layer 4 ″ is formed on the insulating film 3 so as to cover the bottom of the opening 3a of the insulating film 3. At this time, for example, the first organic layer 4 ″ is formed. By the same vacuum deposition as in the embodiment, the organic light emitting layer 43, the organic hole transport layer 42, and the organic hole injection layer 41, which also serve as the organic electron transport layer, are arranged in the reverse order of the stacking order of the organic layers in the first embodiment. Deposit in order.
【００４７】この場合、有機電子輸送層を兼ねる有機発
光層４３としては、例えばＡｌｑ３を５０ｎｍの膜厚で
堆積させる。また、有機正孔輸送層４２としては、例え
ばα−ＮＰＤを２０ｎｍの膜厚で堆積させる。そして、
有機正孔注入層４１としては、例えばｍ−ＭＴＤＡＴＡ
を３０ｎｍの膜厚で堆積させる。In this case, as the organic light emitting layer 43 also serving as the organic electron transporting layer, for example, Alq3 is deposited to a thickness of 50 nm. As the organic hole transport layer 42, for example, α-NPD is deposited to a thickness of 20 nm. And
As the organic hole injection layer 41, for example, m-MTDATA
Is deposited to a thickness of 30 nm.
【００４８】以上の後、有機層４”の成膜を行ったと同
一の真空蒸着装置のチャンバ内にての蒸着処理によっ
て、この有機層４”上に、有機ＥＬ素子の陽極となる上
部電極（以下、陽極上部電極と記す）５’を形成する。
この陽極上部電極５’は、金(Ａｕ）、プラチナ(Ｐ
ｔ）、ニッケル（Ｎｉ）、銅（Ｃｕ）、タングステン
（Ｗ）、クロム（Ｃｒ）等の仕事関数の大きい物質を用
い、有機発光層４３での発光光が透過する程度の膜厚に
形成することとする。After the above, the upper electrode (which serves as the anode of the organic EL element) is formed on the organic layer 4 ″ by vapor deposition in the same vacuum vapor deposition chamber as when the organic layer 4 ″ was formed. Hereinafter, referred to as an anode upper electrode) 5 ′ is formed.
The anode upper electrode 5 'is made of gold (Au), platinum (P
t), a material having a large work function, such as nickel (Ni), copper (Cu), tungsten (W), and chromium (Cr), is formed to a thickness enough to transmit light emitted from the organic light emitting layer 43. It shall be.
【００４９】次に、この陽極上部電極５’上に、第１実
施形態と同様の透明導電膜６を形成する。Next, a transparent conductive film 6 similar to that of the first embodiment is formed on the anode upper electrode 5 '.
【００５０】以上によって、絶縁膜３の各開口部３ａ
に、有機ＥＬ素子が形成される。この有機ＥＬ素子は、
陰極下部電極２ａ’が反射膜となり、基板１と反対側
（すなわち、陽極上部電極５’側）から光ｈを取り出
す、いわゆる上面発光型の有機ＥＬ素子となる。As described above, each opening 3a of the insulating film 3 is formed.
Then, an organic EL element is formed. This organic EL element
The cathode lower electrode 2a 'serves as a reflection film, and the light h is extracted from the side opposite to the substrate 1 (that is, the anode upper electrode 5' side).
【００５１】このようにして得られた有機ＥＬ素子は、
鏡面研磨によって表面粗さが小さく抑えられた陰極下部
電極２ａ’の表面上に、有機層４”が設けられたものに
なる。このため、第１実施形態及び第２実施形態の有機
ＥＬ素子と同様に、発光効率を維持することが可能で、
かつこの有機ＥＬ素子を用いた有機ＥＬディスプレイに
おけるダークスポット（非発光点）の発生を防止するこ
とが可能になる。The organic EL device thus obtained is
The organic layer 4 ″ is provided on the surface of the cathode lower electrode 2a ′ whose surface roughness is suppressed to a small value by mirror polishing. Therefore, the organic EL device according to the first embodiment and the organic EL device according to the second embodiment is provided. Similarly, it is possible to maintain the luminous efficiency,
In addition, it is possible to prevent dark spots (non-light emitting points) from occurring in an organic EL display using the organic EL element.
【００５２】[0052]
【発明の効果】以上説明したように本発明の有機ＥＬ素
子の製造方法及び有機ＥＬ素子によれば、鏡面研磨によ
って表面粗さが小さく抑えられた金属下部電極の表面上
に有機層を設けるようにしたことで、有機層の膜厚を均
一化し、この有機層を挟んで設けられる金属下部電極と
上部電極との間隔を均一化することができる。したがっ
て、金属下部電極−上部電極間における局部的な漏れ電
流の発生を防止し、発光効率を維持することが可能にな
る。さらに、有機ＥＬ素子を用いた有機ＥＬディスプレ
イにおけるダークスポット（非発光点）の発生を防止す
ることが可能になる。As described above, according to the method for manufacturing an organic EL device and the organic EL device of the present invention, an organic layer is provided on the surface of a metal lower electrode whose surface roughness is suppressed to a small level by mirror polishing. With this configuration, the thickness of the organic layer can be made uniform, and the distance between the metal lower electrode and the upper electrode provided with the organic layer interposed therebetween can be made uniform. Therefore, it is possible to prevent the occurrence of local leakage current between the metal lower electrode and the upper electrode, and to maintain the luminous efficiency. Furthermore, it is possible to prevent the occurrence of dark spots (non-light emitting points) in an organic EL display using an organic EL element.
【図１】本発明の第１実施形態を説明するための断面工
程図である。FIG. 1 is a sectional process view for describing a first embodiment of the present invention.
【図２】本発明の第１実施形態を説明するための平面図
である。FIG. 2 is a plan view for explaining the first embodiment of the present invention.
【図３】本発明の第２実施形態を説明するための断面図
である。FIG. 3 is a sectional view for explaining a second embodiment of the present invention.
【図４】本発明の第３実施形態を説明するための断面工
程図である。FIG. 4 is a sectional process view for explaining a third embodiment of the present invention.
【図５】従来の有機ＥＬ素子の一例を示す断面図であ
る。FIG. 5 is a cross-sectional view illustrating an example of a conventional organic EL element.
【図６】従来の有機ＥＬ素子の他の一例を示す断面図で
ある。FIG. 6 is a cross-sectional view showing another example of a conventional organic EL element.
【図７】従来の有機ＥＬ素子のさらに他の一例を示す断
面図である。FIG. 7 is a sectional view showing still another example of the conventional organic EL element.
１…基板、２，２’…金属材料層、２ａ…陽極下部電極
（金属下部電極）、２ａ’…陰極下部電極（金属下部電
極）、４，４’，４”…有機層、５…陰極上部電極（上
部電極）、５’…陽極上部電極（上部電極）、４３…有
機発光層、ｈ…光DESCRIPTION OF SYMBOLS 1 ... Substrate, 2, 2 '... Metal material layer, 2a ... Anode lower electrode (metal lower electrode), 2a' ... Cathode lower electrode (metal lower electrode), 4, 4 ', 4 "... Organic layer, 5 ... Cathode Upper electrode (upper electrode), 5 ': anode upper electrode (upper electrode), 43: organic light emitting layer, h: light
Claims (2)
電極、有機発光層を備えた有機層及び光を透過させる上
部電極を順次形成する有機エレクトロルミネッセンス素
子の製造方法において、 前記有機層を形成する前に、前記金属下部電極を構成す
る金属材料層の表面を鏡面研磨する工程を行うことを特
徴とする有機エレクトロルミネッセンス素子の製造方
法。1. A method for manufacturing an organic electroluminescent device, comprising: forming a metal lower electrode made of a metal material layer, an organic layer having an organic light emitting layer, and an upper electrode that transmits light on a substrate in this order; A method of manufacturing an organic electroluminescent element, comprising, before forming, a step of mirror-polishing the surface of a metal material layer constituting the metal lower electrode.
電極、有機発光層を備えた有機層及び光を透過させる上
部電極が順次設けられてなる有機エレクトロルミネッセ
ンス素子において、 前記金属下部電極は、鏡面研磨された表面を有すること
を特徴とする有機エレクトロルミネッセンス素子。2. An organic electroluminescence device comprising: a metal lower electrode made of a metal material layer; an organic layer having an organic light emitting layer; and an upper electrode that transmits light, which are sequentially provided on a substrate. An organic electroluminescence device having a mirror-polished surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP36016399A JP2001176660A (en) | 1999-12-20 | 1999-12-20 | Manufacturing method of organic electroluminescent element and organic electroluminescent element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP36016399A JP2001176660A (en) | 1999-12-20 | 1999-12-20 | Manufacturing method of organic electroluminescent element and organic electroluminescent element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001176660A true JP2001176660A (en) | 2001-06-29 |
Family
ID=18468186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP36016399A Pending JP2001176660A (en) | 1999-12-20 | 1999-12-20 | Manufacturing method of organic electroluminescent element and organic electroluminescent element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001176660A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003076297A (en) * | 2001-09-06 | 2003-03-14 | Pioneer Electronic Corp | Display panel and apparatus for holding substrate |
| JP2004139991A (en) * | 2002-10-18 | 2004-05-13 | Lg Electron Inc | Organic el device |
| JP2004200146A (en) * | 2002-12-05 | 2004-07-15 | Seiko Epson Corp | Electroluminescent display device and its manufacturing method as well as electronic equipment |
| JP2004227943A (en) * | 2003-01-23 | 2004-08-12 | Fuji Electric Holdings Co Ltd | Organic electroluminescence element and its manufacturing method |
| JP2004296234A (en) * | 2003-03-26 | 2004-10-21 | Fuji Electric Holdings Co Ltd | Organic el element and its manufacturing method |
| JP2005093398A (en) * | 2003-09-19 | 2005-04-07 | Sony Corp | Organic light emitting element, its manufacturing method, and display device |
| JPWO2003096758A1 (en) * | 2002-05-10 | 2005-09-15 | セイコーエプソン株式会社 | LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE |
| JP2007066601A (en) * | 2005-08-30 | 2007-03-15 | Victor Co Of Japan Ltd | Organic el display device |
| US7416463B2 (en) * | 2004-02-12 | 2008-08-26 | Tohoku Pioneer Corporation | Panel substrate, display panel, organic EL panel, and method of manufacturing the same |
| US7646145B2 (en) | 2002-05-22 | 2010-01-12 | Fuji Electric Holdings Co., Ltd. | Organic EL light emitting device |
| WO2012122671A1 (en) * | 2011-03-14 | 2012-09-20 | 深圳市富兴科技有限公司 | Oled mirror with lighting and display functions |
| US8354677B2 (en) | 2010-04-30 | 2013-01-15 | Samsung Display Co., Ltd. | Organic light emitting diode display and manufacturing method thereof |
-
1999
- 1999-12-20 JP JP36016399A patent/JP2001176660A/en active Pending
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003076297A (en) * | 2001-09-06 | 2003-03-14 | Pioneer Electronic Corp | Display panel and apparatus for holding substrate |
| JPWO2003096758A1 (en) * | 2002-05-10 | 2005-09-15 | セイコーエプソン株式会社 | LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE |
| US7710027B2 (en) | 2002-05-10 | 2010-05-04 | Seiko Epson Corporation | Light emitting apparatus including resin banks and electronic device having same |
| US7646145B2 (en) | 2002-05-22 | 2010-01-12 | Fuji Electric Holdings Co., Ltd. | Organic EL light emitting device |
| JP2004139991A (en) * | 2002-10-18 | 2004-05-13 | Lg Electron Inc | Organic el device |
| US7641533B2 (en) | 2002-12-05 | 2010-01-05 | Seiko Epson Corporation | Electroluminescent display device, method for manufacturing the same, and electronic equipment |
| JP2004200146A (en) * | 2002-12-05 | 2004-07-15 | Seiko Epson Corp | Electroluminescent display device and its manufacturing method as well as electronic equipment |
| US7271535B2 (en) | 2002-12-05 | 2007-09-18 | Seiko Epson Corporation | Electroluminescent display device, method for manufacturing the same, and electronic equipment |
| JP2004227943A (en) * | 2003-01-23 | 2004-08-12 | Fuji Electric Holdings Co Ltd | Organic electroluminescence element and its manufacturing method |
| JP2004296234A (en) * | 2003-03-26 | 2004-10-21 | Fuji Electric Holdings Co Ltd | Organic el element and its manufacturing method |
| KR101086580B1 (en) | 2003-09-19 | 2011-11-23 | 소니 주식회사 | Organic electroluminescence device, manufacturing method thereof and display unit |
| US7597602B2 (en) | 2003-09-19 | 2009-10-06 | Sony Corporation | Organic light emitting device, manufacturing method thereof, and display unit |
| CN100441061C (en) * | 2003-09-19 | 2008-12-03 | 索尼株式会社 | Organic light emitting device, manufacturing method thereof, and display unit |
| JP2005093398A (en) * | 2003-09-19 | 2005-04-07 | Sony Corp | Organic light emitting element, its manufacturing method, and display device |
| US7416463B2 (en) * | 2004-02-12 | 2008-08-26 | Tohoku Pioneer Corporation | Panel substrate, display panel, organic EL panel, and method of manufacturing the same |
| JP2007066601A (en) * | 2005-08-30 | 2007-03-15 | Victor Co Of Japan Ltd | Organic el display device |
| US8354677B2 (en) | 2010-04-30 | 2013-01-15 | Samsung Display Co., Ltd. | Organic light emitting diode display and manufacturing method thereof |
| WO2012122671A1 (en) * | 2011-03-14 | 2012-09-20 | 深圳市富兴科技有限公司 | Oled mirror with lighting and display functions |
| KR101565758B1 (en) | 2011-03-14 | 2015-11-04 | 선쩐 푸우싱 테크놀러지 컴퍼니 리미티드 | Oled mirror with lighting and display functions |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100477746B1 (en) | Organic electroluminescence device employing multi-layered anode | |
| US7190114B2 (en) | Light emitting display device with thin film transistor having organic and inorganic insulating films | |
| US6774561B2 (en) | Light-emitting device and process for production thereof having an emission laser held between electrodes | |
| JP2001043980A (en) | Organic electroluminescent element and display device | |
| KR20010051318A (en) | Display apparatus and method for fabricating the same | |
| JP4449116B2 (en) | ORGANIC ELECTROLUMINESCENCE ELEMENT, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE | |
| JP4628690B2 (en) | Organic light emitting display | |
| JP2006324536A (en) | Organic emission display unit | |
| KR100844788B1 (en) | Fabrication method for organic light emitting device and organic light emitting device fabricated by the same method | |
| JP2001176660A (en) | Manufacturing method of organic electroluminescent element and organic electroluminescent element | |
| JP2002246185A (en) | Organic electroluminescence element | |
| JP2004192890A (en) | Organic electroluminescent element | |
| TWI237525B (en) | Electro-luminescence display device and method for forming the same | |
| KR20150037708A (en) | Organic light emitting device | |
| JP2002260858A (en) | Light-emitting element and its manufacturing method | |
| JP2002198182A (en) | Organic el element | |
| KR100784487B1 (en) | Anode fabricating method of organic light emitting device and organic light emitting device including the anode | |
| JP4090743B2 (en) | Method for manufacturing light-emitting device | |
| JP2003123967A (en) | Method for producing light emitting element | |
| JP2008134647A (en) | Organic el device | |
| JP2009004368A (en) | Organic light emitting display device | |
| KR100563066B1 (en) | An organic electro luminescent display device and a method for preparing the same | |
| KR100556369B1 (en) | Organic electroluminescence device and Fabrication method of the same | |
| KR101670659B1 (en) | Method for preparing organic light emitting device | |
| JP2003115391A (en) | Organic electroluminescence element and its manufacturing method, image display equipment |