JP2002246185A - Organic electroluminescence element - Google Patents
Organic electroluminescence elementInfo
- Publication number
- JP2002246185A JP2002246185A JP2001046247A JP2001046247A JP2002246185A JP 2002246185 A JP2002246185 A JP 2002246185A JP 2001046247 A JP2001046247 A JP 2001046247A JP 2001046247 A JP2001046247 A JP 2001046247A JP 2002246185 A JP2002246185 A JP 2002246185A
- Authority
- JP
- Japan
- Prior art keywords
- film
- organic
- transistor
- layer
- organic electroluminescence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005401 electroluminescence Methods 0.000 title claims abstract description 26
- 239000004020 conductor Substances 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 238000002834 transmittance Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 33
- 238000001579 optical reflectometry Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 71
- 239000010408 film Substances 0.000 description 64
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 239000011159 matrix material Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 10
- 230000005525 hole transport Effects 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 3
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 2
- 229910000861 Mg alloy Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- UPCAQIWFPDEZAX-UHFFFAOYSA-N C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=CC(C=2C=CC=CC=2)=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=CC=C1 Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=CC(C=2C=CC=CC=2)=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=CC=C1 UPCAQIWFPDEZAX-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- -1 aryl diamine compound Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、有機エレクトロル
ミネセンス素子に係り、特にアクティブマトリクス型の
有機エレクトロルミネセンス素子に好適な画素電極構造
を有する有機エレクトロルミネセンス素子に関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent device, and more particularly to an organic electroluminescent device having a pixel electrode structure suitable for an active matrix type organic electroluminescent device.
【０００２】[0002]
【従来の技術】有機エレクトロルミネセンス素子（以
下、単に有機ＥＬ素子ともいう）は、高速応答性を有
し、視野角依存性のない光を、低消費電力で発光するこ
とができることより、表示素子として、携帯端末機器や
パーソナルコンピューターのディスプレイ等に応用する
ことが検討されており、車載オーディオ用表示パネルに
はモノカラーを部分的に組み合わせたエリアカラーの表
示素子として実用化されている。2. Description of the Related Art An organic electroluminescent element (hereinafter, also simply referred to as an organic EL element) has a high-speed response and can emit light having no viewing angle dependence with low power consumption. As an element, application to a portable terminal device, a display of a personal computer, and the like is being studied, and an in-vehicle audio display panel has been put to practical use as an area color display element partially combined with a mono color.
【０００３】有機ＥＬ素子の赤（Ｒ）、緑（Ｇ）、青
（Ｂ）に対応した表示素子を組み合わせれば、フルカラ
ー表示も可能であることから、低電圧駆動で高輝度発光
する高性能の有機ＥＬ素子についての検討が種々なされ
ている。[0003] If a display element corresponding to red (R), green (G), and blue (B) of the organic EL element is combined, a full-color display can be performed. Various studies have been made on the organic EL device.
【０００４】図１は、有機ＥＬ素子の基本構成を示す概
略断面図である。有機ＥＬ素子１０は、透明基板１上に
順次、陽極２、有機エレクトロルミネセンス層（以下，
単に有機ＥＬ層ともいう）８、陰極５を積層したものよ
り構成される。ガラスなどの透明基板１上に形成される
陽極２は、大きい仕事関数を有し透明な物質、例えばイ
ンジウム−スズ酸化物（以下、単にＩＴＯともいう）よ
り構成される透明電極である。FIG. 1 is a schematic sectional view showing the basic structure of an organic EL device. The organic EL element 10 includes an anode 2 and an organic electroluminescent layer (hereinafter, referred to as an organic electroluminescent layer) on a transparent substrate 1 sequentially.
8) and the cathode 5 are stacked. The anode 2 formed on a transparent substrate 1 such as glass is a transparent electrode having a large work function and made of a transparent material, for example, indium-tin oxide (hereinafter also simply referred to as ITO).
【０００５】有機ＥＬ層８は、例えば、正孔輸送層３及
び発光層４から構成されるが、単一の層からなる単層型
や、電荷注入性、電荷輸送性、発光性の機能に応じた層
からなる積層型など、いろいろの構成がある。正孔輸送
層３としては、例えばアリールジアミン化合物が用いら
れる。The organic EL layer 8 is composed of, for example, a hole transport layer 3 and a light emitting layer 4, but has a single-layer structure composed of a single layer, and has functions of charge injection, charge transport and light emission. There are various configurations such as a laminated type composed of appropriate layers. As the hole transport layer 3, for example, an aryl diamine compound is used.
【０００６】発光層４としては、蛍光性を有する高分子
材料から低分子材料、金属錯体まで幅広く使用され、そ
の形成法としては、材料により溶液からの塗布等の湿式
法か真空蒸着などの乾式法が選択される。ここで、電子
輸送性の発光層４の例として、トリス（８−キノリノー
ル）アルミニウム有機金属錯体（以下、単にＡｌｑ３と
もいう）がある。The light-emitting layer 4 is widely used from a polymer material having a fluorescent property to a low-molecular material and a metal complex. The method of forming the light-emitting layer 4 is a wet method such as coating from a solution or a dry method such as vacuum evaporation depending on the material. The law is selected. Here, as an example of the electron-transporting light-emitting layer 4, there is a tris (8-quinolinol) aluminum organometallic complex (hereinafter, also simply referred to as Alq3).
【０００７】陰極５としては、小さい仕事関数を有す
る、例えば銀−マグネシウム合金膜が形成される。陽極
２と陰極５の間に電源６より電圧を印加すると、ＩＴＯ
膜の陽極２より注入された正孔は正孔輸送層３を通して
運ばれて電子輸送性の発光層４に注入され、一方、銀−
マグネシウム合金膜の陰極５より注入された電子は電子
輸送性の発光層４中を移動し、電子と正孔は発光層４中
で両者結合して発光する。As the cathode 5, for example, a silver-magnesium alloy film having a small work function is formed. When a voltage is applied between the anode 2 and the cathode 5 from the power supply 6, the ITO
The holes injected from the anode 2 of the film are transported through the hole transport layer 3 and injected into the electron transporting light emitting layer 4, while the silver
Electrons injected from the magnesium alloy film cathode 5 move in the electron-transporting light-emitting layer 4, and electrons and holes are combined in the light-emitting layer 4 to emit light.
【０００８】この発光層４から発せられた光は、透明な
陽極２及び透明基板１を通して、外部に取り出される。
このときの発光色は、発光層４の発光色に依存し、単色
発光であり、Ａｌｑ３の場合には、緑色発光である。The light emitted from the light emitting layer 4 is extracted outside through the transparent anode 2 and the transparent substrate 1.
The luminescent color at this time depends on the luminescent color of the luminescent layer 4 and is monochromatic luminescence. In the case of Alq3, it is green luminescence.
【０００９】[0009]
【発明が解決しようとする課題】このような有機ＥＬ素
子を用いて、画像表示を行う方法として、単純マトリク
ス方式（例えば、特開平２−３７３８５号公報に開示）
と、アクティブマトリクス方式（例えば、特開平５−１
０７５６１号公報に開示）が考えられている。As a method of displaying an image by using such an organic EL element, a simple matrix method (for example, disclosed in Japanese Patent Application Laid-Open No. 2-37385).
And an active matrix method (for example,
No. 07561).
【００１０】単純マトリクス方式では、原理的に線順次
駆動となるので、走査線数が増えるに従い、必要な発光
の輝度も比例して増すことになり、消費電力の増加、電
流増加による素子劣化、などの問題があり、高精細の画
像表示には不適である。これに対して、アクティブマト
リクス方式では、各画素をフレーム時間中点灯できるた
め、必要輝度は実用輝度と同等でよい。アクティブマト
リクス方式では、ガラス基板上に、画素に対応して有機
ＥＬ素子に接続するスイッチング用の薄膜トランジスタ
を形成する構成が一般的であるが、薄膜トランジスタの
特性にはばらつきがあり、有機ＥＬ素子への駆動電流が
ばらついてしまう問題がある。In the simple matrix system, since the driving is performed in a line-sequential manner in principle, as the number of scanning lines increases, the required luminance of light emission also increases in proportion to the power consumption. This is not suitable for displaying high-definition images. On the other hand, in the active matrix system, each pixel can be lit during the frame time, and thus the required luminance may be equal to the practical luminance. In the active matrix method, a configuration in which a switching thin film transistor connected to an organic EL element is formed corresponding to a pixel on a glass substrate is generally used. There is a problem that the drive current varies.
【００１１】これに対して、基板として単結晶シリコン
を用いて、基板にＭＯＳトランジスタを形成すれば、ス
イッチング用のトランジスタ特性のバラツキを抑制でき
るが、上述したように、従来、発光面は基板側である
が、基板として単結晶シリコンを用いる場合には、十分
な強度を有する厚さの単結晶シリコンの光透過率は小さ
いので、発光面を基板側と反対側にする必要がある。従
って、図１に示した、構成とは逆に、基板上に、陰極、
有機ＥＬ層及び陽極を順次積層する構成となる。On the other hand, if MOS transistors are formed on the substrate using single crystal silicon as the substrate, variations in transistor characteristics for switching can be suppressed. However, when single-crystal silicon is used as the substrate, the light-emitting surface needs to be on the side opposite to the substrate side because the light transmittance of single-crystal silicon having sufficient strength is small. Therefore, contrary to the configuration shown in FIG. 1, a cathode,
An organic EL layer and an anode are sequentially laminated.
【００１２】しかし、陽極として用いられるＩＴＯ膜は
スパッタリング法により形成されるが、良好な特性の、
すなわち、透明でしかも抵抗率が低く、仕事関数が高い
ＩＴＯ膜を形成するための成膜条件では、下地となる有
機ＥＬ膜に大きなダメージが加わり、良好な発光が得ら
れないことが知られている。However, although the ITO film used as the anode is formed by a sputtering method, it has good characteristics.
That is, it is known that under film forming conditions for forming an ITO film that is transparent, has a low resistivity, and has a high work function, a large damage is applied to an underlying organic EL film, and good light emission cannot be obtained. I have.
【００１３】これに対して、図１に示した構成の有機Ｅ
Ｌ素子を単結晶シリコン基板上に形成し、陰極を構成す
る金属膜を透過率がある程度得られる薄さに形成するこ
とにより、発光光を基板と反対側に取出す、均一な特性
を有するアクティブマトリクス方式の有機ＥＬ素子が、
Ｓ．Ｒ．Ｆｏｒｒｅｓｔら（Ａｐｐｌ． Ｐｈｙｓ．Ｌ
ｅｔｔ． ｖｏｌ．６８，ｐｐ２６０６）により開示さ
れている。On the other hand, the organic E having the structure shown in FIG.
An active matrix having uniform characteristics, in which light is emitted to the opposite side of the substrate by forming the L element on a single crystal silicon substrate and forming the metal film constituting the cathode to a thickness that allows a certain degree of transmittance. Organic EL device
S. R. Forrest et al. (Appl. Phys. L
ett. vol. 68, pp2606).
【００１４】以下、その一部概略を説明する。図４は、
従来例の有機ＥＬ素子における画素電極部を示す部分断
面図である。図４に示すように、有機ＥＬ素子３０は、
シリコン基板２１上に形成されている。シリコン基板に
は、画素に対応して、ＭＯＳトランジスタ２２が形成さ
れている。Ｓはソース電極、Ｇはゲート電極、Ｄはドレ
イン電極をそれぞれ示す。ＭＯＳトランジスタ２２を蔽
って、絶縁層２３が形成されており、ドレイン電極Ｄ上
にはこれを露出させるコンタクトホール２４が形成され
ており、陽極であり画素電極となる所定形状のＩＴＯ膜
３５が、絶縁層２３上及びコンタクトホール２４の壁面
に形成されて、ドレイン電極Ｄと接続している。Hereinafter, a partial outline thereof will be described. FIG.
It is a partial sectional view showing a pixel electrode part in a conventional organic EL element. As shown in FIG. 4, the organic EL element 30
It is formed on a silicon substrate 21. On the silicon substrate, MOS transistors 22 are formed corresponding to the pixels. S indicates a source electrode, G indicates a gate electrode, and D indicates a drain electrode. An insulating layer 23 is formed so as to cover the MOS transistor 22, a contact hole 24 exposing the insulating layer 23 is formed on the drain electrode D, and an ITO film 35 having a predetermined shape, which is an anode and is a pixel electrode, is formed. , Formed on the insulating layer 23 and on the wall surface of the contact hole 24 and connected to the drain electrode D.
【００１５】このＩＴＯ膜３５上には図示しない有機Ｅ
Ｌ膜及び光を透過する金属膜から構成された陰極が積層
されて、有機ＥＬ素子が形成されている。ＩＴＯ膜３５
と図示しない陰極間に所定の電圧が印加されると、発光
光が得られ、シリコン基板２１で反射する分も含めて陰
極側から出射される。しかし、シリコン基板では光が吸
収されて、光のとりだし効率が悪いという課題があっ
た。An organic E (not shown) is formed on the ITO film 35.
An organic EL element is formed by laminating a cathode composed of an L film and a metal film that transmits light. ITO film 35
When a predetermined voltage is applied between the cathode and the cathode (not shown), emitted light is obtained and emitted from the cathode including the portion reflected by the silicon substrate 21. However, the silicon substrate has a problem that light is absorbed and light extraction efficiency is low.
【００１６】また、ここで、コンタクトホール２４は、
画素の開口率を考慮すると極力小さい方がよい。ところ
が、コンタクトホールが小さくなると、ＩＴＯ膜をスパ
ッタリング法により成膜するとき、コンタクトホール内
部に良好なステップカバレージで膜が堆積されず、ＩＴ
Ｏ膜の比抵抗が高くなり、有機ＥＬ素子への良好な電流
駆動が行われないという課題があった。また、コンタク
トホール中に形成される有機ＥＬ膜も同様に、良好なス
テップカバレージが得られないため、上部電極（陰極）
と下部電極（陽極）がショートしてしまい、素子が破壊
される問題も発生する。Here, the contact hole 24 is
Considering the aperture ratio of the pixel, it is preferable that the aperture ratio is as small as possible. However, when the contact hole becomes small, when the ITO film is formed by the sputtering method, the film is not deposited with good step coverage inside the contact hole, and the
There has been a problem that the specific resistance of the O film is increased and good current driving to the organic EL element is not performed. Similarly, since the organic EL film formed in the contact hole cannot obtain good step coverage, the upper electrode (cathode)
And the lower electrode (anode) is short-circuited, which causes a problem that the element is destroyed.
【００１７】陽極材料として、仕事関数が大きく、反射
率の高い金属材料である、金、白金、イリジウム、パラ
ジウムなどの貴金属を用いることもできるが、これらの
膜をスパッタリング法により形成する場合には、上述の
ＩＴＯ膜と同様、コンタクトホール内部に良好なステッ
プカバレージで膜が堆積されず、コンタクト抵抗が高く
なり、有機ＥＬ素子への良好な電流駆動が行われないと
いう課題があった。As the anode material, a noble metal such as gold, platinum, iridium, or palladium, which is a metal material having a large work function and high reflectivity, can be used. However, when these films are formed by a sputtering method, As in the case of the above-mentioned ITO film, there is a problem that the film is not deposited with good step coverage inside the contact hole, the contact resistance becomes high, and good current drive to the organic EL element is not performed.
【００１８】そこで本発明は、上記課題を解決して、有
機エレクトロルミネセンス素子において、半導体基板上
に形成する陽極（画素電極）から良好な効率で光を取出
すとともに良好な電圧印加駆動のできる有機エレクトロ
ルミネセンス素子を提供することを目的とするものであ
る。In view of the above, the present invention has been made to solve the above-mentioned problems, and in an organic electroluminescence element, an organic electroluminescent device capable of extracting light with good efficiency from an anode (pixel electrode) formed on a semiconductor substrate and capable of driving with good voltage application. It is an object of the present invention to provide an electroluminescent device.
【００１９】[0019]
【課題を解決するための手段】上記目的を達成するため
の手段として、第１の発明は、半導体基板と、前記半導
体基板上に形成されたトランジスタと、前記トランジス
タを蔽って形成された絶縁層と、前記絶縁層に形成され
たコンタクトホール及び前記絶縁層上に形成され、前記
トランジスタと接続する陽極と、前記陽極上に形成され
た有機エレクトロルミネセンス膜と、前記エレクトロル
ミネセンス膜上に形成された陰極とを有し、前記有機エ
レクトロルミネセンス膜からの発光光を前記陰極側より
取出す有機エレクトロルミネセンス素子において、前記
陽極を、前記トランジスタと接続しており高い光反射率
を有する第１の導電体層と、前記第１の導電体層上に形
成してあり、前記有機エレクトロルミネセンス膜と接続
し、高い仕事関数値と高い光透過率を有する第２の導電
体層とより構成したことを特徴とする有機エレクトロル
ミネセンス素子である。According to a first aspect of the present invention, there is provided a semiconductor substrate, a transistor formed on the semiconductor substrate, and an insulator formed covering the transistor. A layer, a contact hole formed in the insulating layer and an anode formed on the insulating layer and connected to the transistor; an organic electroluminescent film formed on the anode; and an organic electroluminescent film formed on the anode. A cathode formed, and an organic electroluminescence element that takes out light emitted from the organic electroluminescence film from the cathode side, wherein the anode is connected to the transistor and has a high light reflectance. A first work layer, the first work layer, the first work layer, the first work layer, and a high work function. When an organic electroluminescent device characterized in that more configuration and a second conductive layer having a high light transmittance.
【００２０】また、第２の発明は、半導体基板と、前記
半導体基板上に形成されたトランジスタと、前記トラン
ジスタを蔽って形成された絶縁層と、前記絶縁層に形成
されたコンタクトホール及び前記絶縁層上に形成され、
前記トランジスタと接続する陽極と、前記陽極上に形成
された有機エレクトロルミネセンス膜と、前記エレクト
ロルミネセンス膜上に形成された陰極とを有し、前記有
機エレクトロルミネセンス膜からの発光光を前記陰極側
より取出す有機エレクトロルミネセンス素子において、
前記陽極を、前記トランジスタと接続する第１の導電体
層と、前記第１の導電体層上に形成してあり、前記有機
エレクトロルミネセンス膜と接続し、高い仕事関数値と
高い光反射率を有する第２の導電体層とより構成したこ
とを特徴とする有機エレクトロルミネセンス素子であ
る。According to a second aspect of the present invention, there is provided a semiconductor substrate, a transistor formed on the semiconductor substrate, an insulating layer formed so as to cover the transistor, a contact hole formed in the insulating layer, Formed on the insulating layer,
An anode connected to the transistor, an organic electroluminescence film formed on the anode, and a cathode formed on the electroluminescence film, wherein the light emitted from the organic electroluminescence film is In the organic electroluminescent element taken out from the cathode side,
A first conductor layer connected to the transistor and the anode formed on the first conductor layer, the anode connected to the organic electroluminescent film, and a high work function value and a high light reflectance; And a second conductor layer having the following.
【００２１】[0021]
【発明の実施の形態】以下、本発明の実施の形態につ
き、好ましい実施例により、図面を参照して説明する。
なお、説明の簡便のため、参照符号については、従来例
の構成と同一の構成には、同一の参照符号を付し、その
説明を省略しているPreferred embodiments of the present invention will be described below with reference to the accompanying drawings.
For the sake of simplicity, the same reference numerals are given to the same components as those of the conventional example, and the description is omitted.
【００２２】＜実施例＞図２は、本発明の有機ＥＬ素子
の実施例の概略上面図であリ、図３は、本発明の有機Ｅ
Ｌ素子の実施例における画素電極部を示す部分断面図で
ある。図２に示すように、アクティブマトリクス型の有
機ＥＬ素子２０は、スイッチング用のトランジスタ及び
信号を蓄積する容量（図示しない））の形成されたアク
ティブマトリクス基板１１上に画素１２がマトリクス状
に配置されたものから構成されており、各画素にはこれ
らを選択するための選択線１３と映像信号を供給する信
号線１５が接続されている。なお、ここでは、表示の簡
便さのために、画素のマトリクス配置として、４行１０
列の場合を示すが、実際には、縦横にそれぞれ所定数の
画素が配置されているものである。<Embodiment> FIG. 2 is a schematic top view of an embodiment of the organic EL device of the present invention, and FIG.
FIG. 4 is a partial cross-sectional view illustrating a pixel electrode unit in an example of an L element. As shown in FIG. 2, the active matrix type organic EL element 20 has pixels 12 arranged in a matrix on an active matrix substrate 11 on which a switching transistor and a capacitor (not shown) for accumulating a signal are formed. Each pixel is connected to a selection line 13 for selecting these and a signal line 15 for supplying a video signal. Note that, here, for simplicity of display, four rows of 10 pixels are arranged in a matrix of pixels.
Although the case of a column is shown, in practice, a predetermined number of pixels are arranged vertically and horizontally.
【００２３】図３には、有機ＥＬ素子２０の一画素が示
されており、単結晶シリコン基板２１上にＭＯＳトラン
ジスタ２２が形成されている。ＭＯＳトランジスタ２２
において、Ｓはソース電極を、Ｇはゲート電極を、Ｄは
ドレイン電極をそれぞれ示す。ＭＯＳトランジスタ上に
は、例えば厚さ２００ｎｍのＳｉＯ2からなる絶縁層２
３が形成されており、絶縁層２３には画素電極２５とド
レイン電極Ｄとのコンタクトを行うためのコンタクトホ
ール２４が形成されている。FIG. 3 shows one pixel of the organic EL element 20, and a MOS transistor 22 is formed on a single crystal silicon substrate 21. MOS transistor 22
In S, S indicates a source electrode, G indicates a gate electrode, and D indicates a drain electrode. On the MOS transistor, an insulating layer 2 made of, for example, SiO 2 having a thickness of 200 nm
3 are formed, and a contact hole 24 for making contact between the pixel electrode 25 and the drain electrode D is formed in the insulating layer 23.
【００２４】ここで、画素電極２５のうち、コンタクト
ホール２４に充填される金属電極層２５ａは例えば厚さ
２００ｎｍのＡｌ膜をスパッタすることにより形成され
る。金属電極層２５ａにＡｌ膜を用いることにより、コ
ンタクトホール２４中の側壁部分に堆積される金属電極
層２５ａの比抵抗を、有機ＥＬ素子２０の電圧駆動上で
問題ないレベルに抑えることができる。また、ここで、
Ａｌ膜を形成する際にスパッタ後リフロー工程を取り入
れたり、ＣＶＤによってＡｌ膜を形成することにより、
一層、ドレイン電極Ｄと金属電極層２５ａとのコンタク
ト抵抗を小さくすることができる。また、金属電極層２
５ａが平坦となることによって、画素の反射率、開口率
が向上する。Here, of the pixel electrode 25, the metal electrode layer 25a filling the contact hole 24 is formed by, for example, sputtering an Al film having a thickness of 200 nm. By using an Al film for the metal electrode layer 25a, the specific resistance of the metal electrode layer 25a deposited on the side wall portion in the contact hole 24 can be suppressed to a level that does not cause a problem in voltage driving of the organic EL element 20. Also, where
By incorporating a reflow process after sputtering when forming an Al film, or by forming an Al film by CVD,
Further, the contact resistance between the drain electrode D and the metal electrode layer 25a can be reduced. In addition, the metal electrode layer 2
The flatness of 5a improves the reflectance and aperture ratio of the pixel.
【００２５】金属電極層２５ａ上には、例えば厚さ３０
ｎｍのＩＴＯ膜２５ｂが形成されており、画素電極２５
はこの金属電極層２５ａとＩＴＯ膜２５ｂの２層からな
っている。金属電極層２５ａを構成するＡｌは仕事関数
が小さいが、ＩＴＯ膜２５ｂは仕事関数が大きいので、
ＩＴＯ膜２５ｂ上に配置される有機ＥＬ膜２６を構成す
る例えばα−ＮＰＤからなる正孔輸送層２６ａへの正孔
注入が可能となる。ここで、α−ＮＰＤは、４，４’−
ビス［Ｎ−（１−ナプチル）−Ｎ−フェニール−アミ
ノ］ビフェニールの略称である。On the metal electrode layer 25a, for example, a thickness 30
nm ITO film 25b is formed, and the pixel electrode 25
Is composed of two layers of the metal electrode layer 25a and the ITO film 25b. Al constituting the metal electrode layer 25a has a small work function, but the ITO film 25b has a large work function.
Holes can be injected into the hole transport layer 26a made of, for example, α-NPD, which constitutes the organic EL film 26 disposed on the ITO film 25b. Here, α-NPD is 4,4′-
It is an abbreviation for bis [N- (1-napthyl) -N-phenyl-amino] biphenyl.
【００２６】次に、画素電極２５上に有機ＥＬ膜２６が
形成される。すなわち、画素電極２５まで形成されたシ
リコン基板１１をイソプロピルアルコール中にて超音波
洗浄・乾燥後、２００Ｗの酸素プラズマ中で１分間のプ
ラズマ洗浄を行い、有機ＥＬ成膜装置（真空蒸着装置で
ある）中にセットする。真空蒸着装置を１０-4Ｐａレベ
ルまで真空排気後、抵抗加熱法によりα−ＮＰＤを毎秒
０．２ｎｍの速度にて成膜し、膜厚７０ｎｍの正孔輸送
層２６ａを形成した。Next, an organic EL film 26 is formed on the pixel electrode 25. That is, the silicon substrate 11 formed up to the pixel electrode 25 is subjected to ultrasonic cleaning and drying in isopropyl alcohol, and then to plasma cleaning in oxygen plasma of 200 W for 1 minute, and then an organic EL film forming apparatus (a vacuum evaporation apparatus). ). After evacuation of the vacuum evaporation apparatus to a level of 10 −4 Pa, α-NPD was formed at a rate of 0.2 nm / sec by a resistance heating method to form a 70 nm-thick hole transport layer 26a.
【００２７】正孔輸送層２６ａの上には、電子輸送層兼
発光層２６ｂを形成した。すなわち、真空蒸着装置を１
０-4Ｐａレベルまで真空排気後、抵抗加熱法により例え
ばＡｌｑ３を毎秒０．５ｎｍの速度にて成膜し、膜厚５
０ｎｍの電子輸送層兼発光層２６ｂを形成した。さら
に、厚さ１２ｎｍのバソキュプロイン膜からなる正孔阻
止層（図示せず）、厚さ１ｎｍのフッ化リチウム膜（図
示せず）が形成され、有機ＥＬ膜２６が得られる。ここ
で、バソキュプロイン膜は毎秒０．２ｎｍ、フッ化リチ
ウム膜は毎秒０．０２ｎｍの蒸着速度で形成した。An electron transport layer / light emitting layer 26b was formed on the hole transport layer 26a. That is, the vacuum deposition apparatus is
After evacuation to 0 -4 Pa level, for example, Alq3 is deposited at a rate of 0.5 nm per second by a resistance heating method,
An electron transport layer / light emitting layer 26b having a thickness of 0 nm was formed. Further, a hole blocking layer (not shown) made of a bathocuproine film having a thickness of 12 nm and a lithium fluoride film (not shown) having a thickness of 1 nm are formed, and the organic EL film 26 is obtained. Here, the bathocuproine film was formed at a deposition rate of 0.2 nm per second, and the lithium fluoride film was formed at a deposition rate of 0.02 nm per second.
【００２８】有機ＥＬ膜２６の上に，所定形状の厚さ１
０ｎｍのＡｌ膜からなる陰極２７が形成されている。Ａ
ｌ膜は、真空蒸着法により、毎秒３．５ｎｍの速度で成
膜した。Ａｌ膜を真空蒸着法により形成することによ
り、下の有機ＥＬ膜にダメージを与えることなく、陰極
２７を形成できる。なお、正孔輸送層２６ａからＡｌ膜
（陰極２７）までの形成を、大気に曝すことなく、順次
真空中で行うことにより、信頼性の高い有機ＥＬ素子２
０が得られる。On the organic EL film 26, a predetermined thickness 1
A cathode 27 made of a 0 nm Al film is formed. A
The l film was formed at a rate of 3.5 nm per second by a vacuum evaporation method. By forming the Al film by the vacuum evaporation method, the cathode 27 can be formed without damaging the underlying organic EL film. The formation from the hole transport layer 26a to the Al film (cathode 27) is sequentially performed in a vacuum without exposing to the atmosphere, so that a highly reliable organic EL element 2 can be obtained.
0 is obtained.
【００２９】本実施例の有機ＥＬ素子は単結晶シリコン
基板２１上の発光であることより、シリコン基板２１と
は反対側への発光光取出しとなるが、陽極となる画素電
極２５を金属電極層（Ａｌ膜）２５ａとＩＴＯ膜２５ｂ
の２層の構成にしているので、スイッチング用のＭＯＳ
トランジスタ２２とのコンタクトを低抵抗でとれると同
時に、正孔注入も良好にできる。発光光はＩＴＯ膜２５
ｂを通してＡｌ膜２５ａに達し、ここで吸収されること
なく反射されて、外部に放出されるので、光取出し効率
が良好である。陰極２７を形成するＡｌ膜は所定の厚さ
としているので、光を所定の透過率で透過するとともに
良好なコンタクトを有機ＥＬ膜２６との間でとることが
できる。また、画素電極（下部電極）２５が平坦となる
ことによって画素の反射率、開口率が向上するほか、画
素電極（下部電極）２５上に形成される有機ＥＬ膜２６
も平坦に形成され、陰極（上部電極）２７と画素電極
（下部電極）２５とのショートの問題も解決される。Since the organic EL element of this embodiment emits light on the single-crystal silicon substrate 21 and emits light toward the side opposite to the silicon substrate 21, the pixel electrode 25 serving as an anode is connected to the metal electrode layer. (Al film) 25a and ITO film 25b
The switching MOS
The contact with the transistor 22 can be made with low resistance, and the hole injection can be made good. The emitted light is ITO film 25
b, the light reaches the Al film 25a, where it is reflected without being absorbed and emitted outside, so that the light extraction efficiency is good. Since the Al film forming the cathode 27 has a predetermined thickness, light can be transmitted at a predetermined transmittance and good contact can be made with the organic EL film 26. In addition, the flatness of the pixel electrode (lower electrode) 25 improves the reflectance and aperture ratio of the pixel, and the organic EL film 26 formed on the pixel electrode (lower electrode) 25
Are formed flat, and the problem of short-circuit between the cathode (upper electrode) 27 and the pixel electrode (lower electrode) 25 is also solved.
【００３０】ここで、画素電極２５の２層目をＩＴＯ膜
２５ｂにより構成した場合を説明したが、これに代え
て、酸化インジウム、酸化亜鉛、酸化ジルコンを用いて
もよい。また、画素電極２５の２層目をＩＴＯ膜２５ｂ
に代えて、仕事関数の値が４．８ｅＶ以上の材料で、し
かも光反射率の高い導電体、例えば金、白金、イリジウ
ム、パラジウムを用いてもよい。この場合は、発光光は
画素電極の２層目を構成する導電体の金属によって反射
されて、陰極側より有機エレクトロルミネセンス膜から
の発光光が外部に放出されるので、光取出し効率が良好
である。Here, the case where the second layer of the pixel electrode 25 is constituted by the ITO film 25b has been described, but indium oxide, zinc oxide or zircon oxide may be used instead. The second layer of the pixel electrode 25 is formed by the ITO film 25b.
Alternatively, a conductor having a work function value of 4.8 eV or more and having high light reflectance, such as gold, platinum, iridium, or palladium, may be used. In this case, the emitted light is reflected by the conductive metal constituting the second layer of the pixel electrode, and the emitted light from the organic electroluminescence film is emitted to the outside from the cathode side, so that the light extraction efficiency is good. It is.
【００３１】[0031]
【発明の効果】以上詳細に説明したように、本発明の有
機エレクトロルミネセンス素子は、請求項１記載によれ
ば、陽極を、トランジスタと接続しており高い光反射率
を有する第１の導電体層と、前記第１の導電体層上に形
成してあり、有機エレクトロルミネセンス膜と接続し、
高い仕事関数値と高い光透過率を有する第２の導電体層
とより構成したことにより、半導体基板上に形成する陽
極から良好な効率で光を取出すとともに良好な電圧印加
駆動のできる有機エレクトロルミネセンス素子を提供す
ることができるという効果がある。As described above in detail, according to the organic electroluminescence device of the present invention, according to the first aspect, the anode is connected to the transistor and the first conductive material having a high light reflectance. A body layer, formed on the first conductive layer, connected to the organic electroluminescent film,
An organic electroluminescent device comprising a second conductor layer having a high work function value and a high light transmittance allows light to be extracted from an anode formed on a semiconductor substrate with good efficiency and good voltage application driving to be performed. There is an effect that a sense element can be provided.
【００３２】また、本発明の有機エレクトロルミネセン
ス素子は、請求項２記載によれば、陽極を、トランジス
タと接続する第１の導電体層と、前記第１の導電体層上
に形成してあり、有機エレクトロルミネセンス膜と接続
し、高い仕事関数値と高い光反射率を有する第２の導電
体層とより構成したことにより、半導体基板上に形成す
る陽極から良好な効率で光を取出すとともに良好な電圧
印加駆動のできる有機エレクトロルミネセンス素子を提
供することできるという効果がある。Further, according to the organic electroluminescence element of the present invention, the anode is formed on the first conductor layer connected to the transistor and on the first conductor layer. Yes, it is connected to an organic electroluminescence film and is composed of a second conductor layer having a high work function value and a high light reflectance, so that light is extracted with good efficiency from an anode formed on a semiconductor substrate. In addition, there is an effect that it is possible to provide an organic electroluminescence element that can perform favorable voltage application driving.
【図１】有機ＥＬ素子の基本構成を示す概略断面図であ
る。FIG. 1 is a schematic sectional view showing a basic configuration of an organic EL element.
【図２】本発明の有機ＥＬ素子の実施例を示す概略上面
図である。FIG. 2 is a schematic top view showing an example of the organic EL device of the present invention.
【図３】本発明の有機ＥＬ素子の実施例における画素電
極部を示す部分断面図である。FIG. 3 is a partial cross-sectional view showing a pixel electrode portion in an embodiment of the organic EL device of the present invention.
【図４】従来例の有機ＥＬ素子における画素電極部を示
す部分断面図である。FIG. 4 is a partial cross-sectional view showing a pixel electrode portion in a conventional organic EL element.
１…（透明）基板、２…陽極、３…正孔輸送層、４…発
光層、５…陰極、６…電源、７…発光光、８…有機ＥＬ
層、１０…有機ＥＬ素子、１１…アクティブマトリクス
基板、１２…画素、１３…選択線、１５…信号線、２０
…有機ＥＬ素子、２１…シリコン基板、２２…ＭＯＳト
ランジスタ、２３…絶縁層、２４…コンタクトホール、
２５…画素電極、２５ａ…金属電極層、２５ｂ…ＩＴＯ
膜、２６…有機ＥＬ膜、２６ａ…正孔輸送層、２６ｂ…
電子輸送層兼発光層、２７…陰極、３０…有機ＥＬ素
子、３５…ＩＴＯ膜（陽極）。DESCRIPTION OF SYMBOLS 1 ... (transparent) board | substrate, 2 ... anode, 3 ... hole transport layer, 4 ... light emitting layer, 5 ... cathode, 6 ... power supply, 7 ... light emission, 8 ... organic EL
Layer 10 Organic EL element 11 Active matrix substrate 12 Pixel 13 Select line 15 Signal line 20
... Organic EL element, 21 ... Silicon substrate, 22 ... MOS transistor, 23 ... Insulating layer, 24 ... Contact hole,
25 ... pixel electrode, 25a ... metal electrode layer, 25b ... ITO
Film, 26 ... organic EL film, 26a ... hole transport layer, 26b ...
Electron transport layer and light emitting layer, 27: cathode, 30: organic EL element, 35: ITO film (anode).
フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０５Ｂ 33/14 Ｈ０５Ｂ 33/14 Ａ 33/24 33/24 33/28 33/28 Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat II (Reference) H05B 33/14 H05B 33/14 A 33/24 33/24 33/28 33/28
Claims (2)
れたトランジスタと、前記トランジスタを蔽って形成さ
れた絶縁層と、前記絶縁層に形成されたコンタクトホー
ル及び前記絶縁層上に形成され、前記トランジスタと接
続する陽極と、前記陽極上に形成された有機エレクトロ
ルミネセンス膜と、前記エレクトロルミネセンス膜上に
形成された陰極とを有し、前記有機エレクトロルミネセ
ンス膜からの発光光を前記陰極側より取出す有機エレク
トロルミネセンス素子において、 前記陽極を、前記トランジスタと接続しており高い光反
射率を有する第１の導電体層と、前記第１の導電体層上
に形成してあり、前記有機エレクトロルミネセンス膜と
接続し、高い仕事関数値と高い光透過率を有する第２の
導電体層とより構成したことを特徴とする有機エレクト
ロルミネセンス素子。A semiconductor substrate; a transistor formed on the semiconductor substrate; an insulating layer formed over the transistor; a contact hole formed in the insulating layer; and a transistor formed on the insulating layer. An anode connected to the transistor, an organic electroluminescence film formed on the anode, and a cathode formed on the electroluminescence film, and emits light emitted from the organic electroluminescence film. In the organic electroluminescence element taken out from the cathode side, the anode is formed on a first conductor layer connected to the transistor and having a high light reflectance, and on the first conductor layer. And a second conductor layer connected to the organic electroluminescence film and having a high work function value and a high light transmittance. Organic electroluminescent device.
れたトランジスタと、前記トランジスタを蔽って形成さ
れた絶縁層と、前記絶縁層に形成されたコンタクトホー
ル及び前記絶縁層上に形成され、前記トランジスタと接
続する陽極と、前記陽極上に形成された有機エレクトロ
ルミネセンス膜と、前記エレクトロルミネセンス膜上に
形成された陰極とを有し、前記有機エレクトロルミネセ
ンス膜からの発光光を前記陰極側より取出す有機エレク
トロルミネセンス素子において、 前記陽極を、前記トランジスタと接続する第１の導電体
層と、前記第１の導電体層上に形成してあり、前記有機
エレクトロルミネセンス膜と接続し、高い仕事関数値と
高い光反射率を有する第２の導電体層とより構成したこ
とを特徴とする有機エレクトロルミネセンス素子。2. A semiconductor substrate, a transistor formed on the semiconductor substrate, an insulating layer formed so as to cover the transistor, a contact hole formed in the insulating layer, and formed on the insulating layer. An anode connected to the transistor, an organic electroluminescence film formed on the anode, and a cathode formed on the electroluminescence film, and emits light emitted from the organic electroluminescence film. In the organic electroluminescence element taken out from the cathode side, the anode is formed on the first conductor layer connected to the transistor, and the first conductor layer, and the organic electroluminescence film An organic electroluminescent device, comprising: a second conductive layer having a high work function value and a high light reflectivity connected to the second conductive layer. Sensing element.
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| JP2001046247A JP2002246185A (en) | 2001-02-22 | 2001-02-22 | Organic electroluminescence element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001046247A JP2002246185A (en) | 2001-02-22 | 2001-02-22 | Organic electroluminescence element |
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|---|---|
| JP2002246185A true JP2002246185A (en) | 2002-08-30 |
Family
ID=18907907
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