JP2001156213A - High frequency circuit device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve a problem such as deterioration of isolation between terminals caused by the occurrence of unwanted resonance as a result by generating a potential difference between a ground conductor pattern 103 on the back of a semiconductor chip 101 and a ground conductor pattern 108 on the inner layer of a packaging substrate 102 when the frequency of a high frequency signal to be used for a high frequency circuit 100 becomes high. SOLUTION: A ground conductor connecting means is provided for respectively connecting a ground conductor pattern 3 on the back of a semiconductor chip 1 and a ground conductor pattern 5 on the back of a packaging substrate 2 at a prescribed interval.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency circuit device for handling high-frequency signals mainly in a microwave band and a millimeter wave band, that is, to a structure in which a high-frequency circuit board is flip-chip mounted using conductive bumps. In particular, the present invention relates to a structure for suppressing resonance due to an unnecessary propagation mode generated between ground conductors.

[0002]

2. Description of the Related Art FIG.
FIG. 1 is a configuration diagram showing a conventional high-frequency circuit device disclosed in Japanese Unexamined Patent Application Publication No. 2000-209, in which 100 is a high-frequency circuit formed on the surface of a semiconductor chip 101;
2 is a mounting substrate, 103 is a ground conductor pattern provided on the back surface of the semiconductor chip 101, 104 is a conductive bump, 105 is a ground conductor pad, 106 is a ground connection through hole, 107 is a ground connection wire, and 108 is a mounting. This is a ground conductor pattern formed on an inner layer of the substrate 102.

Next, the operation will be described. The semiconductor chip 101 includes a high-frequency circuit 100 using an FET or the like on its surface.
Is formed on the upper surface of the mounting substrate 102 by flip-chip mounting. The input and output of the high-frequency circuit 100 are connected to the pattern on the mounting board 102 via the conductive bumps 104.

The ground conductor pattern 103 on the back surface of the semiconductor chip 101 is connected via a ground connection wire 107 to a ground conductor pad 105 arranged on the surface of the mounting substrate 102. The ground conductor pad 105 is connected to a ground conductor pattern 108 provided on an inner layer of the mounting board 102 via a ground connection through hole 106.

A high-frequency signal is applied from the mounting substrate 102 to the high-frequency circuit 100 on the front surface of the semiconductor chip 101 through the conductive bumps 104, and a ground current is applied to a ground conductor pattern on the back surface of the semiconductor chip 101 via a ground connection wire 107. 103.

In the high-frequency circuit device having such a structure, the ground conductor pattern 103 on the back surface of the semiconductor chip 101 and the ground conductor pattern 108 on the inner layer of the mounting board 102 are connected to the ground connection wire 107, the ground conductor pad 105, and the ground connection. Are connected by a through hole 106.

For this reason, the high-frequency circuit 100 provided on the surface of the semiconductor chip 101 has a structure in which the upper and lower sides are surrounded by ground conductors, and is electrically shielded from the outside. Accordingly, it is possible to prevent unnecessary radio waves from being radiated from the high-frequency circuit 100 to the outside, and prevent external radio waves from interfering with the high-frequency circuit 100. Therefore, it is not necessary to provide a metal wall for shielding around the semiconductor chip 101, and it is possible to reduce the size and density of the circuit.

[0008]

Since the conventional high-frequency circuit device is constructed as described above, the high-frequency circuit 100
When the frequency of the high-frequency signal used by the semiconductor chip 101 increases, a potential difference occurs between the ground conductor pattern 103 on the back surface of the semiconductor chip 101 and the ground conductor pattern 108 on the inner layer of the mounting board 102. As a result, unnecessary resonance occurs and There were problems such as deterioration of isolation between them.

The reason is that the ground current flows separately to the ground conductor pattern 103 on the back surface of the semiconductor chip 101 and the ground conductor pattern 108 on the inner layer of the mounting board 102. FIG. 21 is a schematic representation of the above. In the figure, reference numeral 111 denotes an inductance component of the conductive bump 104, and 112 denotes a ground connection wire 107.
And an inductance component 113 of the through hole 106 for ground connection, and 113 is a high-frequency signal pattern on the mounting substrate 102 side.

As can be seen from FIG. 21, the two ground conductor patterns can be regarded as transmission lines whose both ends are short-circuited by the inductance component 112. Therefore, at a frequency at which the length L of the ground conductor pattern is substantially equal to 1/2 of the propagation wavelength or an integer multiple thereof, 2
The two ground conductor patterns are brought into a resonance state as a resonator having both ends short-circuited. In such a resonance state, a part of the high-frequency signal input to the semiconductor chip 101 is coupled to the resonator, thereby deteriorating the input / output reflection characteristics and deteriorating the isolation between the input and output. Therefore, such a structure causes a problem that good characteristics cannot be obtained at a high frequency, and a problem that good characteristics cannot be obtained when a large semiconductor chip 101 is used.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems. If the frequency of a high-frequency signal is high, good characteristics can be obtained, and if the frequency of the high-frequency signal is the same, a larger semiconductor can be obtained. An object is to obtain a high-frequency circuit device that can use a chip.

[0012]

A high-frequency circuit device according to the present invention is a ground conductor connecting means for connecting a ground conductor pattern on the back surface of a dielectric substrate and a ground conductor pattern on the back surface of a mounting substrate at predetermined intervals. Is provided.

The high-frequency circuit device according to the present invention includes a plurality of first ground conductors arranged on the surface of the dielectric substrate at intervals less than half a wavelength of the high-frequency signal input to the high-frequency circuit. The pad is connected to a plurality of second ground conductor pads respectively arranged on the surface of the mounting board so as to face the first ground conductor pads.

The high-frequency circuit device according to the present invention is provided with ground conductor connecting means for connecting the ground conductor pattern on the front surface of the dielectric substrate and the ground conductor pattern on the back surface of the mounting substrate at predetermined intervals. .

The high-frequency circuit device according to the present invention is characterized in that a plurality of ground conductor pads and a dielectric are disposed on the surface of the mounting substrate at intervals less than half the wavelength of the high-frequency signal input to the high-frequency circuit. The ground conductor patterns on the surface of the substrate are connected to each other.

According to the present invention, there is provided a high-frequency circuit device comprising: a plurality of bump connection conductor pads respectively connected to a first ground conductor pad and a resistor on a surface of a dielectric substrate; A plurality of second ground conductor pads respectively arranged to face the connection conductor pad are connected to each other.

According to the high frequency circuit device of the present invention, there are provided a plurality of bump connection conductor pads respectively connected to a ground conductor pattern on a surface of a dielectric substrate via a resistor, and a plurality of bump connection conductor pads on a surface of a mounting substrate. And a plurality of ground conductor pads respectively arranged so as to face each other.

The high-frequency circuit device according to the present invention includes a plurality of first ground conductor pads respectively disposed on a surface of a dielectric substrate, and a plurality of first ground conductor pads disposed on a surface of a mounting substrate so as to face the respective first ground conductor pads. The plurality of arranged bump-connecting conductor pads are connected to each other.

In the high-frequency circuit device according to the present invention, a plurality of bump connection conductor pads respectively arranged on the surface of the mounting substrate are connected to the ground conductor pattern on the surface of the dielectric substrate. .

The high-frequency circuit device according to the present invention includes a plurality of first ground conductor pads respectively disposed on a surface of a dielectric substrate, and a plurality of first ground conductor pads disposed on a surface of a mounting substrate so as to face each first ground conductor pad. The plurality of second ground conductor pads arranged are connected to each other by using resistive bumps.

In the high-frequency circuit device according to the present invention, a plurality of ground conductor pads respectively arranged on the surface of the mounting substrate and the ground conductor patterns on the surface of the dielectric substrate are connected using resistive bumps. It was done.

In the high-frequency circuit device according to the present invention, a slit pattern is provided by removing a part of the ground conductor pattern on the surface of the dielectric substrate, and the ground conductor patterns on both sides of the slit pattern are electrically connected. This is provided with a resistive film pattern.

In the high-frequency circuit device according to the present invention, the slit pattern is formed in the ground conductor pattern on the surface of the dielectric substrate in a notch shape from the outer peripheral side of the dielectric substrate,
The length of the slit pattern is 4 times the wavelength of the high-frequency signal.
It is one-half or an odd multiple of its wavelength.

In the high-frequency circuit device according to the present invention, the slit pattern is formed in a hole shape inside the ground conductor pattern on the surface of the dielectric substrate, and the length of the slit pattern is half the wavelength of the high-frequency signal. 1 or an integral multiple of the wavelength.

The high-frequency circuit device according to the present invention is inserted between the dielectric substrate and the mounting substrate to connect the strip conductor pattern on the input side of the high-frequency circuit to the strip conductor pattern on the surface of the mounting substrate. And a second conductive bump for connecting the strip conductive pattern on the output side of the high-frequency circuit and the strip conductive pattern on the surface of the mounting board to constitute a strip conductor connecting means.

In the high frequency circuit device according to the present invention, one of the strip conductor patterns connected to the input side and the output side of the high frequency circuit is deleted.

[0027]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below. Embodiment 1 FIG. 1 is a cross-sectional view showing a high-frequency circuit device according to Embodiment 1 of the present invention, FIG. 2 is a pattern diagram of a surface of a semiconductor chip constituting the high-frequency circuit device of FIG. 1, and FIG. 3 constitutes the high-frequency circuit device of FIG. FIG. 3 is a pattern diagram of a mounting substrate surface. In the figure, 1 is a ground conductor pattern 3
(Dielectric substrate) on the front surface of which the high-frequency circuit 100 in which the strip conductor pattern 4 is connected to the input side and the output side is provided on the back side, and the front side is the front side of the semiconductor chip 1 A mounting substrate having a strip conductor pattern 6 on the front surface and a ground conductor pattern 5 on the back surface, 3 a ground conductor pattern, 4 a strip conductor pattern,
5 is a ground conductor pattern, and 6 is a strip conductor pattern.

Reference numerals 7 and 11 denote ground conductor pads (first ground conductor pads) which are arranged on the surface of the semiconductor chip 1 at an interval of less than half the wavelength of the high-frequency signal input to the high-frequency circuit 100. , 8, and 12 penetrate into the inside of the semiconductor chip 1 to connect the ground conductor pads 7, 11 to the ground conductor pattern 3 on the back surface of the semiconductor chip 1, respectively, for ground connection through holes (first columnar conductors), 13, Reference numeral 15 denotes a ground conductor pad (second ground conductor pad) disposed on the surface of the mounting board 2 so as to face the ground conductor pads 7 and 11, respectively. Pads 13 and 15 are mounted on mounting substrate 2
9, ground connection through holes (second columnar conductors) connected to the ground conductor pattern 5 on the back surface of
Are inserted between the semiconductor chip 1 and the mounting board 2, and the ground conductor pads 7, 11 and the ground conductor pad 1
The conductive bumps 10 connect the bump conductor pads 10 from which the strip conductor patterns 4 are drawn out to the strip conductor patterns 6 on the surface of the mounting substrate 2. is there.

A strip conductor connecting means is constituted by the conductive bumps 9 and the bump connecting conductor pads 10.
Ground conductor pads 7, 11, 13, and 15, ground connection through holes 8, 12, 14, and 16, and conductive bumps 9 constitute ground conductor connection means.

Next, the operation will be described. The semiconductor chip 1 and the mounting board 2 are arranged in parallel with their respective surfaces facing each other. On the entire back surface of the semiconductor chip 1,
Ground conductor pattern 3 is arranged, and FE
A high-frequency circuit 100 including an active element such as T is formed.

The input / output signals of the high-frequency circuit 100 are extracted by the strip conductor pattern 4 and connected to the bump connection conductor pads 10. Conductor pad for bump connection 1
On both sides of 0, ground conductor pads 11 are provided,
Each is connected to the ground conductor pattern 3 on the back surface of the semiconductor chip 1 via the through hole 12 for ground connection.

A plurality of ground conductor pads 7 are provided between the two bump connection conductor pads 10 and on the outer periphery of the high-frequency circuit 100, and each of the plurality of ground conductor pads 7 is connected to the semiconductor chip 1 through the ground connection through hole 8. It is connected to the ground conductor pattern 3 on the back surface.

A ground conductor pattern 5 is provided on the entire back surface of the mounting substrate 2, and a strip conductor pattern 6 is drawn out from the front surface of the semiconductor chip 1 from a position facing the bump connecting conductor pad 10. 1
Ground conductor pads 13 and 15 are provided at positions facing the ground conductor pads 7 and 11 on the surface of
Each of the ground conductor pads 13 and 15 is connected to the mounting substrate 2 through the ground connection through holes 14 and 16.
Is connected to the ground conductor pattern 5 on the back surface of the substrate.

Between the bump connecting conductor pads 10 on the surface of the semiconductor chip 1 and the strip conductor patterns 6 on the surface of the mounting substrate 2, and between the ground conductor pads 7 and 11 on the surface of the semiconductor chip 1 and the surface of the mounting substrate 2. The semiconductor chip 1 and the mounting board 2 are between the ground conductor pads 13 and 15.
They are connected by a conductive bump 9 sandwiched between them.

The high-frequency signal applied to the strip conductor pattern 6 on the surface of the mounting substrate 2 is passed through the conductive bumps 9 to the bump connection conductor pads 10 on the surface of the semiconductor chip 1.
And input to the high frequency circuit 100 via the strip conductor pattern 4. The output signal of the high-frequency circuit 100 is output to the strip conductor pattern 6 on the surface of the mounting board 2 through the reverse path.

At this time, the ground current of the high-frequency signal is transmitted from the ground conductor pattern 5 on the back surface of the mounting substrate 2 to the ground conductor pad 15 on the front surface of the mounting substrate 2 through the ground connection through hole 16 and the conductive bump 9 Flow through the ground conductor pad 11 on the surface of the semiconductor chip 1 through the through hole 1 for ground connection.
2 flows to the ground conductor pattern 3 on the back surface of the semiconductor chip 1. The ground conductor pattern 3 of the semiconductor chip 1 and the ground conductor pattern 5 of the mounting board 2 are connected to ground conductor pads 11 provided on both sides of the bump connection pads 10 at both ends of the semiconductor chip 1.
The four ground conductor pads 7 provided between the two locations are also connected.

In such a configuration, two ground conductor patterns on the back surface of the semiconductor chip 1 and the back surface of the mounting board 2 are connected at a plurality of locations. FIG. 4 schematically shows this state using an equivalent circuit. In the figure, reference numeral 30 denotes through holes 12 and 16 for ground connection and ground conductor pads 11 and 1.
An inductance component of the conductive bumps 9 and the like between the five,
Numeral 31 denotes an inductance component of the conductive bump 9 between the strip conductor pattern 6 and the bump-connecting conductive pad 10, and 32 denotes a conductive bump 9 between the ground-connecting through holes 8, 14 and the ground conductive pads 7, 13. It is an inductance component that has.

As can be seen from FIG. 4, the transmission line composed of the two ground conductor patterns is divided into three portions whose both ends are short-circuited by the inductances 30 and 32. The reason why such a circuit is in a resonance state is that
The length L of each transmission line whose both ends are short-circuited is a frequency that is 伝 搬 of the propagation wavelength or an integer multiple thereof, and compared to a case where two ground conductor patterns are connected only at both ends of the substrate. Resonance does not occur up to high frequencies. That is, if the ground connection pads are provided at intervals smaller than 1/2 of the propagation wavelength of the high-frequency signal to be used and the two ground conductor patterns are connected to each other, it is possible to prevent the characteristic deterioration due to unnecessary resonance.

As is clear from the above, the first embodiment
According to this, the ground conductor pattern 3 on the back surface of the semiconductor chip 1 and the ground conductor pattern 5 on the back surface of the mounting substrate 2
Are connected at predetermined intervals, so that there is an effect that it is possible to realize a high-frequency circuit device in which characteristics are not deteriorated due to unnecessary resonance even at a high frequency. Conversely, if the frequency is the same, there is an effect that good characteristics can be obtained even when a larger semiconductor chip 1 is used.

In the first embodiment, a ground conductor pad 7 for connecting the ground conductor pattern 3 on the back surface of the semiconductor chip 1 to the ground conductor pattern 5 on the back surface of the mounting board 2 is provided around the high-frequency circuit 100. However, a similar effect can be obtained even if the same is provided inside the high-frequency circuit 100. In addition, although the case where the semiconductor chip 1 including the active element such as the FET is flip-chip mounted here has been described, the same effect can be obtained when the microwave circuit board without using a semiconductor is flip-chip mounted.

Furthermore, in the first embodiment, the case where one strip conductor pattern 4 is connected to each of the input side and the output side of the high-frequency circuit 100 has been described, but the present invention is not limited to this. A plurality of strip conductor patterns 4 may be connected to the output side. Also,
One of the strip conductor patterns 4 connected to the input side and the output side of the high-frequency circuit 100 may be deleted.

Embodiment 2 5 is a sectional view showing a high-frequency circuit device according to a second embodiment of the present invention, FIG. 6 is a pattern diagram of a semiconductor chip surface constituting the high-frequency circuit device of FIG. 5, and FIG. 7 constitutes the high-frequency circuit device of FIG. FIG. 3 is a pattern diagram of a mounting substrate surface. In the drawings, the same reference numerals as those in FIGS. 1
7 is a strip conductor pattern 4 on the surface of the semiconductor chip 1.
And a ground conductor pattern provided so as to surround the high-frequency circuit 100.

Next, the operation will be described. The semiconductor chip 1 and the mounting board 2 are arranged in parallel with their respective surfaces facing each other. The surface of the semiconductor chip 1 has FE
A high-frequency circuit 100 including an active element such as T is formed.

The input / output signals of the high-frequency circuit 100 are taken out by the strip conductor pattern 4 and connected to the bump connection conductor pads 10. A ground conductor pattern 17 is arranged around the high-frequency circuit 100 and on both sides of the strip conductor pattern 4, and the strip conductor pattern 4 and the ground conductor pattern 17 form a coplanar line.

A ground conductor pattern 5 is provided on the entire back surface of the mounting substrate 2, and a strip conductor pattern 6 is drawn out from a position facing the bump connection conductor pad 10 on the front surface of the semiconductor chip 1 on the front surface. Ground conductor pads 15 are provided on both sides of the drawing position of the pattern 6. In addition, the ground conductor pattern 5 on the back surface of the mounting substrate 2 is provided on the surface of the mounting substrate 2 at a position facing the ground conductor pattern 17 around the high-frequency circuit 100 on the surface of the semiconductor chip 1 via a ground connection through hole 14. Is provided.

The space between the bump connecting conductor pad 10 on the surface of the semiconductor chip 1 and the strip conductor pattern 6 on the surface of the mounting substrate 2, the ground conductor pattern 17 on the surface of the semiconductor chip 1 and the ground conductor on the surface of the mounting substrate 2 The pads 13 and 15 are connected by conductive bumps 9 sandwiched between the semiconductor chip 1 and the mounting substrate 2.

Even when the high-frequency circuit 100 on the surface of the semiconductor chip 1 is formed of a coplanar line, the ground conductor pattern 17 of the coplanar line,
The structure in which the two ground conductors of the ground conductor pattern 5 of the mounting board 2 exist has a problem of characteristic deterioration due to unnecessary resonance. Therefore, by connecting two ground conductors at the ground conductor pad 13 provided on the mounting board 2 as in the second embodiment, the transmission line portion having both ends short-circuited in the same manner as in the first embodiment. Can be shortened, so that the frequency at which resonance occurs can be increased.

As described above, according to the second embodiment, in the case where the high-frequency circuit 100 of the semiconductor chip 1 is formed of a coplanar line, the high-frequency circuit does not cause characteristic degradation due to unnecessary resonance even at a high frequency. This has the effect of realizing a circuit device.

Although the case where a semiconductor chip including an active element such as an FET is flip-chip mounted here has been described, the same effect can be obtained when a microwave circuit board without using a semiconductor is flip-chip mounted.

Embodiment 3 FIG. 8 is a sectional view showing a high-frequency circuit device according to Embodiment 3 of the present invention, and FIG. 9 is a pattern diagram of a surface of a semiconductor chip constituting the high-frequency circuit device of FIG. In the drawings, the same reference numerals as those in FIGS. 1 and 2 denote the same or corresponding parts, and a description thereof will not be repeated. Reference numeral 18 denotes a conductor pad for bump connection, and 19 denotes a resistive film.

Next, the operation will be described. The bump connection conductor pad 18 provided on the surface of the semiconductor chip 1 is electrically connected to the ground conductor pad 7 via a resistance film 19. The ground conductor pad 7 is connected to the ground conductor pattern 3 on the back surface of the semiconductor chip 1 via a ground connection through hole 8. The semiconductor chip 1 is flip-chip mounted on the mounting substrate 2, and the conductive pads 18 for bump connection and the ground conductive pads 13 on the back surface of the mounting substrate 2 are connected by conductive bumps 9.

FIG. 10 schematically shows the relationship between the ground conductor patterns in such a configuration using an equivalent circuit.
become that way. As can be seen from FIG. 10, the ground conductor pattern 3 on the back surface of the semiconductor chip 1 and the ground conductor pattern 5 on the back surface of the mounting board 2 have inductances such as through holes 12 and 16 for ground connection and conductive bumps 9 at both ends. The connection between them is connected by a series circuit of the inductance 32 of the through holes 8 and 14 for ground connection and the conductive bumps 9 and the resistance of the resistive film 19 between them.

When the lossy circuit elements are inserted in parallel in this manner, the resonance of the transmission line short-circuited at both ends greatly decreases the Q value of the resonance, and the frequency characteristic of the resonance becomes very gentle. The coupling with the strip line is also very small. For this reason, the influence of the unnecessary resonance on the characteristics of the high-frequency circuit device can be almost ignored. In the first and second embodiments, the propagation wavelength of the high-frequency signal using the distance L between the points connected by the conductive bumps 9 is one.
However, in the third embodiment, L does not have to be less than 1/2 of the propagation wavelength.
When the semiconductor chip 1 and the mounting substrate 2 are used at a high frequency, there is no problem that the number of points at which the semiconductor chip 1 and the mounting substrate 2 are connected by the conductive bumps 9 becomes too large.

As described above, according to the third embodiment, there is an effect that the influence of unnecessary resonance on the characteristics of the high-frequency circuit device can be eliminated. Further, even at a high frequency, the number of points at which the semiconductor chip 1 and the mounting substrate 2 are connected by the conductive bumps 9 can be reduced, so that the area of the semiconductor chip 1 can be reduced, and the size and cost of the high-frequency circuit device can be reduced. Also play.

Embodiment 4 FIG. 11 is a pattern diagram of the surface of a semiconductor chip constituting a high-frequency circuit device according to Embodiment 4 of the present invention. In the drawings, the same reference numerals as those in FIGS. 6 and 9 indicate the same or corresponding parts, and thus description thereof will be omitted.

Next, the operation will be described. A portion of the ground conductor pattern 17 provided on the surface of the semiconductor chip 1 is partially removed, and a bump connection conductor pad 18 insulated from the ground conductor pattern 17 is provided, and the ground conductor pattern 17 and the bump connection conductor pad are provided. 18
Are electrically connected via a resistance film 19. The bump connection conductor pad 18 is connected to the ground conductor pad 13 provided on the surface of the mounting board 2 by the conductive bump 9.

With such a configuration, the third embodiment can be used.
Similarly to the above, the Q value of the unnecessary resonance between the two ground conductor patterns is significantly reduced, so that the influence of the unnecessary resonance on the characteristics of the high-frequency circuit device can be almost ignored.

As described above, according to the fourth embodiment, there is an effect that the influence of unnecessary resonance on the characteristics of the high-frequency circuit device can be eliminated. Further, even at a high frequency, the number of points at which the semiconductor chip 1 and the mounting substrate 2 are connected by the conductive bumps 9 can be reduced, so that the area of the semiconductor chip 1 can be reduced, and the size and cost of the high-frequency circuit device can be reduced. Also play.

Embodiment 5 FIG. FIG. 12 is a pattern diagram of the surface of a mounting board constituting a high-frequency circuit device according to Embodiment 5 of the present invention. In the figure, the same reference numerals as those in FIG. Reference numeral 20 denotes a conductive pad for bump connection, and reference numeral 21 denotes a resistive film.

Next, the operation will be described. A bump connection conductor pad 20 is provided on the surface of the mounting substrate 2, and is connected to the ground conductor pad 13 via a resistance film 21. The ground conductor pad 13 is connected to the ground conductor pad 7 or the ground conductor pattern 17 provided on the surface of the semiconductor chip 1 by the conductive bump 9.

As described above, even with the configuration in which the resistance film 21 is provided on the mounting substrate 2 side, the same effect as in the case where the resistance film 19 is provided on the semiconductor chip 1 side as in the third and fourth embodiments is exerted. . Further, in this case, since the area for providing the resistance film 19 on the surface of the semiconductor chip 1 is not required, the area of the semiconductor chip 1 can be reduced.

As described above, according to the fifth embodiment, there is an effect that the influence of unnecessary resonance on the characteristics of the high-frequency circuit device can be eliminated. In addition, the semiconductor chip 1
Since the area of the device can be reduced, there is an effect that cost can be reduced.

Embodiment 6 FIG. FIG. 13 is a sectional view showing a high-frequency circuit device according to Embodiment 6 of the present invention. In the figure, the same reference numerals as those in FIG. 22 is a resistive bump.

Next, the operation will be described. The ground conductor pad 7 provided on the surface of the semiconductor chip 1 and the ground conductor pad 13 provided on the surface of the mounting substrate 2 are connected by a resistive bump 22.

With such a configuration, similarly to the third to fifth embodiments, the Q value of the unnecessary resonance between the two ground conductor patterns is reduced, and the influence of the unnecessary resonance on the characteristics of the high-frequency circuit device is reduced. Can be eliminated. Further, since it is not necessary to provide a resistive film on the semiconductor chip 1 and the mounting substrate 2, the area of the entire high-frequency circuit device can be reduced.

As described above, according to the sixth embodiment, there is an effect that the influence of unnecessary resonance on the characteristics of the high-frequency circuit device can be eliminated. In addition, there is an effect that the high-frequency circuit device can be downsized.

Embodiment 7 FIG. 14 is a sectional view showing a high-frequency circuit device according to Embodiment 7 of the present invention. In the figure, the same reference numerals as those in FIGS.

Next, the operation will be described. This is a configuration in the case where the high-frequency circuit 100 of the semiconductor chip 1 is formed of a coplanar line, and the ground conductor pattern 17 of the coplanar line on the surface of the semiconductor chip 1 and the ground The connection with the conductor pad 13 is made,
The same effect as that of No. 6 can be obtained.

As described above, according to the seventh embodiment, there is an effect that the influence of unnecessary resonance on the characteristics of the high-frequency circuit device can be eliminated. In addition, there is an effect that the high-frequency circuit device can be downsized.

Embodiment 8 FIG. 15 is a sectional view showing a high-frequency circuit device according to an eighth embodiment of the present invention, FIG. 16 is a pattern diagram of a semiconductor chip surface constituting the high-frequency circuit device of FIG. 15, and FIG. 17 constitutes the high-frequency circuit device of FIG. FIG. 3 is a pattern diagram of a mounting substrate surface. In the figure, FIG.
7 denote the same or corresponding parts, and a description thereof will not be repeated. 23 is a slit-like pattern, and 24 is a resistive film.

Next, the operation will be described. By partially removing the ground conductor pattern 17 of the coplanar line provided on the surface of the semiconductor chip 1, a slit-shaped pattern 23 in which a conductor is elongated and partially removed is provided, and a resistive film 24 is provided inside the slit-shaped pattern 23. Is provided.

The ground current of the high-frequency signal propagating through the coplanar line concentrates on the edge portion of the ground conductor pattern 17 adjacent to the strip conductor pattern 4, and is almost completely removed from the ground conductor pattern 17 at a portion away from the strip conductor pattern 4. Not flowing. However, in a state in which a potential difference occurs between the ground conductor pattern 3 of the semiconductor chip 1 and the ground conductor pattern 5 of the mounting board 2 to cause unnecessary resonance, the current in the resonance mode spreads and flows over the entire surface of the ground conductor pattern 17.

For this reason, by appropriately selecting the shape of the slit pattern 23, it is possible to cut off the current in the unnecessary resonance mode without affecting the characteristics of the high-frequency circuit. When the resistive film 24 is provided inside the slit pattern 23 for blocking the unnecessary resonance mode current, the unnecessary resonance mode current is absorbed by the resistance film 24, and the two ground conductor patterns in the third to seventh embodiments are used. The Q value of the unnecessary resonance can be reduced in the same manner as in the case of the resistors placed in parallel. Therefore, characteristic deterioration of the high-frequency circuit device due to unnecessary resonance can be suppressed.

In such a configuration, there is no need to provide conductive bumps other than the bump connecting conductor pads 10 used for inputting and outputting high frequency signals and the ground conductor pads 15 provided on both sides thereof. As a result, the area of the semiconductor chip 1 can be reduced, and the assembling process can be simplified.

As described above, there is an effect that the influence of the unnecessary resonance on the characteristics of the high-frequency circuit device can be eliminated. In addition, the number of bump connection portions is reduced, and the semiconductor chip 1
This has the effect of reducing the area and reducing the cost.

Embodiment 9 FIG. 18 is a pattern diagram of the surface of a semiconductor chip constituting a high-frequency circuit device according to Embodiment 9 of the present invention. In the figure, the same reference numerals as those in FIG. 25
Is a slit-shaped pattern formed in a notch shape from the outer peripheral side of the semiconductor chip 1.

Next, the operation will be described. In the ninth embodiment, the slit-shaped pattern 25 is provided in the ground conductor pattern 17 in a cut shape from the outer peripheral side of the substrate.
The length S of the slit-shaped pattern 25 is set to about １ ／ of the propagation wavelength of the high-frequency signal.

The resistance film 24 is provided on a portion of the slit pattern 25 on the outer peripheral side of the substrate. Such a slit pattern 25 is considered to be a slot line in which one is short-circuited and the other is open, so that the slit pattern 25 is in a resonance state at a frequency at which the length S becomes １ ／ wavelength. At such a frequency, the current flowing through the ground conductor pattern 17 flows intensively on both sides of the slot line, and is absorbed by the resistance film 24 provided on the open end side of the slot line. Therefore, when unnecessary resonance occurs between the two ground conductor patterns at this frequency, a large absorption effect is obtained by the slit-shaped pattern 25, so that the characteristic deterioration due to the unnecessary resonance can be efficiently suppressed.

As described above, according to the ninth embodiment, there is an effect that better characteristics can be obtained as compared with the eighth embodiment. In the ninth embodiment, the length S of the slit pattern 25 is set to １ ／ of the propagation wavelength of the high-frequency signal. However, the same effect can be obtained even if the length S is an odd multiple. .

Embodiment 10 FIG. FIG. 19 is a pattern diagram of the surface of a semiconductor chip constituting a high-frequency circuit device according to Embodiment 10 of the present invention. In the figure, the same reference numerals as those in FIG.
Reference numeral 26 denotes a slit-like pattern formed in the ground conductor pattern 17 in a hole shape.

Next, the operation will be described. In the tenth embodiment, the slit-shaped pattern 26 is provided as an elongated hole in the ground conductor pattern 17, and the length S of the slit-shaped pattern 26 is set to about 1 / １ ／ of the propagation wavelength of the high-frequency signal.
It is 2.

The resistance film 24 is provided at the center of the slit pattern 26. Since such a slit-like pattern 26 is considered to be a slot line with both ends short-circuited, it resonates at a frequency where the length S is １ ／ wavelength. At such a frequency, the current flowing through the ground conductor pattern 17 flows intensively on both sides of the slot line, and is absorbed by the resistance film 24 provided at the central portion of the slot line. Therefore, when unnecessary resonance occurs between two ground conductor patterns at this frequency, a large absorption effect is obtained by the slit-shaped pattern 26, so that characteristic degradation due to unnecessary resonance can be suppressed efficiently.

As described above, according to the tenth embodiment, there is an effect that better characteristics can be obtained as compared with the eighth embodiment. In the tenth embodiment, the length S of the slit pattern 26 is set to be １ ／ of the propagation wavelength of the high-frequency signal.

[0084]

As described above, according to the present invention, the ground conductor connecting means for connecting the ground conductor pattern on the back surface of the dielectric substrate and the ground conductor pattern on the back surface of the mounting substrate at predetermined intervals is provided. With such a configuration, good characteristics can be obtained even when the frequency of the high-frequency signal is high, and a large semiconductor chip can be used if the frequency of the high-frequency signal is the same.

According to the present invention, at intervals of less than half the wavelength of the high frequency signal input to the high frequency circuit,
A plurality of first ground conductor pads respectively arranged on the surface of the dielectric substrate, and a plurality of second ground conductor pads respectively arranged on the surface of the mounting substrate so as to face the first ground conductor pads; Are connected so that good characteristics can be obtained even if the frequency of the high-frequency signal is high without complicating the structure.If the frequency of the high-frequency signal is the same, use a large semiconductor chip. There is an effect that can be.

According to the present invention, since the ground conductor connecting means for connecting the ground conductor pattern on the front surface of the dielectric substrate and the ground conductor pattern on the back surface of the mounting substrate at predetermined intervals is provided, the high frequency If the frequency of the signal is high, good characteristics can be obtained, and if the frequency of the high-frequency signal is the same, there is an effect that a large semiconductor chip can be used.

According to the present invention, at intervals of less than half the wavelength of the high frequency signal input to the high frequency circuit,
Since the ground conductor pads arranged on the surface of the mounting board are connected to the ground conductor patterns on the surface of the dielectric substrate, the frequency of the high-frequency signal is high without complicating the structure. As long as good characteristics are obtained and the frequency of the high-frequency signal is the same, a large semiconductor chip can be used.

According to the present invention, a plurality of bump connection conductor pads respectively connected to the respective first ground conductor pads via the resistor on the surface of the dielectric substrate, and the respective bump connection conductors on the surface of the mounting substrate. Since a plurality of second ground conductor pads respectively arranged so as to face the pads are connected to each other, good characteristics can be obtained even if the frequency of the high-frequency signal is high, and the frequency of the high-frequency signal is reduced. If they are the same, there is an effect that a large semiconductor chip can be used. Further, even at a high frequency, the number of connection points of the conductive bumps can be reduced, so that the area of the semiconductor chip can be reduced. As a result, there is an effect that the size and cost can be reduced.

According to the present invention, a plurality of bump connection conductor pads respectively connected to the ground conductor pattern on the surface of the dielectric substrate via the resistor and the bump connection conductor pads on the surface of the mounting substrate are opposed to each other. In this way, good characteristics can be obtained even if the frequency of the high-frequency signal is high, and if the frequency of the high-frequency signal is the same, a large semiconductor There is an effect that a chip can be used. Further, even at a high frequency, the number of connection points of the conductive bumps can be reduced, so that the area of the semiconductor chip can be reduced. As a result, there is an effect that the size and cost can be reduced.

According to the present invention, the plurality of first ground conductor pads respectively disposed on the surface of the dielectric substrate and the plurality of first ground conductor pads are respectively disposed on the surface of the mounting substrate so as to face each of the first ground conductor pads. Since it was configured to connect to multiple bump connection conductor pads,
Good characteristics can be obtained even when the frequency of the high-frequency signal is high, and a large semiconductor chip can be used if the frequency of the high-frequency signal is the same. Also, even at high frequencies, the number of connection points of the conductive bumps can be reduced, so that the area of the semiconductor chip can be reduced,
As a result, there is an effect that the size and cost can be reduced.

According to the present invention, the plurality of bump connection conductor pads respectively arranged on the surface of the mounting substrate and the ground conductor pattern on the surface of the dielectric substrate are connected to each other. If the frequency is high, good characteristics can be obtained, and if the frequency of the high-frequency signal is the same, a large semiconductor chip can be used. Further, even at a high frequency, the number of connection points of the conductive bumps can be reduced, so that the area of the semiconductor chip can be reduced. As a result, there is an effect that the size and cost can be reduced.

According to the present invention, the plurality of first ground conductor pads respectively arranged on the surface of the dielectric substrate and the plurality of first ground conductor pads are arranged on the surface of the mounting substrate so as to face the respective first ground conductor pads. Since the plurality of second ground conductor pads are connected to each other by using the resistive bumps, it is possible to eliminate the influence of unnecessary resonance on the characteristics of the high-frequency circuit device and to reduce the size of the high-frequency circuit device. There is an effect that can be achieved.

According to the present invention, the plurality of ground conductor pads respectively disposed on the surface of the mounting substrate and the ground conductor pattern on the surface of the dielectric substrate are connected to each other using the resistive bumps. In addition, the effect of unnecessary resonance on the characteristics of the high-frequency circuit device can be eliminated, and the size of the high-frequency circuit device can be reduced.

According to the present invention, a part of the ground conductor pattern on the surface of the dielectric substrate is removed to provide a slit pattern, and the resistive film pattern for electrically connecting the ground conductor patterns on both sides of the slit pattern. , The effect of unnecessary resonance on the characteristics of the high-frequency circuit device can be eliminated, the number of connection points of the bumps can be reduced, the area of the semiconductor chip can be reduced, and the cost can be reduced. .

According to the present invention, the slit pattern is formed in the ground conductor pattern on the surface of the dielectric substrate in the form of a notch from the outer peripheral side of the dielectric substrate, and the length of the slit pattern corresponds to the wavelength of the high-frequency signal. Since the configuration is such that the wavelength is a quarter or an odd multiple of the wavelength, there is an effect that the characteristic degradation due to unnecessary resonance can be more efficiently suppressed.

According to the present invention, the slit pattern is formed in the shape of a hole inside the ground conductor pattern on the surface of the dielectric substrate, and the length of the slit pattern is 又 は of the wavelength of the high-frequency signal or its length. Since the configuration is made to be an integral multiple of the wavelength, there is an effect that the characteristic deterioration due to unnecessary resonance can be more efficiently suppressed.

According to the present invention, the first conductive bump which is inserted between the dielectric substrate and the mounting substrate and connects the strip conductor pattern on the input side of the high-frequency circuit to the strip conductor pattern on the surface of the mounting substrate is provided. Since the strip conductor connecting means is constituted by the strip conductor pattern on the output side of the high-frequency circuit and the second conductive bump connecting the strip conductor pattern on the surface of the mounting board, the structure is not complicated, There is an effect that the strip conductor patterns can be connected.

According to the present invention, one of the strip conductor patterns connected to the input side and the output side of the high frequency circuit is deleted, so that the input side or the output side of the high frequency circuit is eliminated. Even when the strip conductor pattern is not connected to one side, good characteristics can be obtained even if the frequency of the high-frequency signal is high, and if the frequency of the high-frequency signal is the same, a large semiconductor chip can be used. is there.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a high-frequency circuit device according to a first embodiment of the present invention.

FIG. 2 is a pattern diagram of a surface of a semiconductor chip constituting the high-frequency circuit device of FIG. 1;

FIG. 3 is a pattern diagram of a surface of a mounting board constituting the high-frequency circuit device of FIG. 1;

FIG. 4 is a schematic diagram showing an equivalent circuit of the high-frequency circuit device of FIG.

FIG. 5 is a sectional view showing a high-frequency circuit device according to a second embodiment of the present invention.

6 is a pattern diagram of a surface of a semiconductor chip constituting the high-frequency circuit device of FIG. 5;

FIG. 7 is a pattern diagram of a surface of a mounting board constituting the high-frequency circuit device of FIG. 5;

FIG. 8 is a sectional view showing a high-frequency circuit device according to a third embodiment of the present invention.

FIG. 9 is a pattern diagram of the surface of a semiconductor chip constituting the high-frequency circuit device of FIG. 8;

FIG. 10 is a schematic diagram showing an equivalent circuit of the high-frequency circuit device of FIG.

FIG. 11 is a pattern diagram of a surface of a semiconductor chip constituting a high-frequency circuit device according to a fourth embodiment of the present invention.

FIG. 12 is a pattern diagram of a surface of a mounting board constituting a high-frequency circuit device according to a fifth embodiment of the present invention;

FIG. 13 is a sectional view showing a high-frequency circuit device according to a sixth embodiment of the present invention.

FIG. 14 is a sectional view showing a high-frequency circuit device according to a seventh embodiment of the present invention.

FIG. 15 is a sectional view showing a high-frequency circuit device according to an eighth embodiment of the present invention.

16 is a pattern diagram of the surface of a semiconductor chip constituting the high-frequency circuit device of FIG.

FIG. 17 is a pattern diagram of a surface of a mounting board constituting the high-frequency circuit device of FIG. 15;

FIG. 18 is a pattern diagram of a surface of a semiconductor chip constituting a high-frequency circuit device according to a ninth embodiment of the present invention.

FIG. 19 is a pattern diagram of a surface of a semiconductor chip constituting a high-frequency circuit device according to a tenth embodiment of the present invention.

FIG. 20 is a configuration diagram showing a conventional high-frequency circuit device.

FIG. 21 is a schematic diagram showing an equivalent circuit of a conventional high-frequency circuit device.

[Explanation of symbols]

1 semiconductor chip (dielectric substrate), 2 mounting substrate, 3,
5, 17 ground conductor pattern, 4, 6 strip conductor pattern, 7, 11 ground conductor pad (first ground conductor pad, ground conductor connection means), 8, 12 ground connection through hole (first
Column conductors, ground conductor connection means), 9 conductive bumps (strip conductor connection means, ground conductor connection means), 10 bump connection conductor pads (strip conductor connection means), 13, 15 ground conductor pads (second ground) Conductor pad, ground conductor connection means), 1
4, 16 ground connection through holes (second columnar conductor, ground conductor connection means), 17 ground conductor patterns, 18, 20 bump connection conductor pads, 1
9, 21, 24 resistive film, 22 resistive bump, 23,
25, 26 slit pattern, 30-32 inductance component, 100 high frequency circuit.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Takeshi Oshima 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Inside Mitsubishi Electric Corporation (72) Inventor Miya-Zaki- ▼ Maori-Yasu ▼ Marunouchi-2, Chiyoda-ku, Tokyo Chome 2-3, Mitsubishi Electric Corporation

Claims (15)

[Claims] 1. A dielectric substrate having a ground conductor pattern provided on a back surface thereof and a high-frequency circuit having a strip conductor pattern connected to an input side and an output side provided on a front surface, and a front surface side of the dielectric substrate. A mounting substrate having a strip conductor pattern provided on the front surface and a ground conductor pattern provided on the back surface, and a strip conductor pattern on the input side of the high-frequency circuit; Strip conductor connecting means for connecting the strip conductor pattern on the output side of the high-frequency circuit and the strip conductor pattern on the front surface of the mounting substrate, and the ground conductor pattern on the back surface of the dielectric substrate. A ground that connects the ground conductor patterns on the back side of the mounting board at predetermined intervals. A high-frequency circuit device comprising: 2. A plurality of first ground conductor pads respectively arranged on a surface of a dielectric substrate at intervals less than a half wavelength of a high-frequency signal input to a high-frequency circuit; A plurality of first columnar conductors penetrating into the inside of the substrate and connecting each of the first ground conductor pads to a ground conductor pattern on the back surface of the dielectric substrate; and each of the first ground conductors on the surface of the mounting substrate A plurality of second pads respectively arranged to face the pads;
A plurality of second columnar conductors penetrating into the inside of the mounting board and connecting each of the second ground conductor pads to a ground conductor pattern on the back surface of the mounting board; And a plurality of conductive bumps which are inserted between the first ground conductor pad and the second ground conductor pad, respectively, and are inserted between the mounting board and the mounting board, thereby constituting ground conductor connection means. The high-frequency circuit device according to claim 1. 3. A high-frequency circuit having a strip conductor pattern connected to an input side and an output side is provided on the surface, and a ground conductor pattern is provided on the surface so as to surround the strip conductor pattern and the high-frequency circuit. A dielectric substrate, a mounting substrate having a front surface side disposed in parallel with the front surface side of the dielectric substrate, a strip conductor pattern applied to the front surface, and a ground conductor pattern applied to the back surface; Strip conductor connecting means for connecting the strip conductor pattern on the input side and the strip conductor pattern on the surface of the mounting board, and connecting the strip conductor pattern on the output side of the high-frequency circuit to the strip conductor pattern on the surface of the mounting board;
A high-frequency circuit device comprising ground conductor connecting means for connecting the ground conductor pattern on the front surface of the dielectric substrate and the ground conductor pattern on the back surface of the mounting substrate at predetermined intervals. 4. A plurality of ground conductor pads respectively arranged on the surface of the mounting board at intervals less than half the wavelength of the high-frequency signal input to the high-frequency circuit; A plurality of columnar conductors for connecting each of the ground conductor pads to the ground conductor pattern on the back surface of the mounting substrate, and a ground conductor pattern on the surface of the dielectric substrate inserted between the dielectric substrate and the mounting substrate; 4. The high-frequency circuit device according to claim 3, wherein said ground conductor connecting means comprises a plurality of conductive bumps respectively connecting said ground conductor pads. 5. A plurality of first ground conductor pads respectively disposed on a surface of a dielectric substrate, and a plurality of first ground conductor pads respectively connected to the first ground conductor pads via a resistor on the surface of the dielectric substrate. And a plurality of first columnar conductors penetrating into the dielectric substrate and connecting each of the first ground conductor pads to a ground conductor pattern on the back surface of the dielectric substrate. A plurality of second ground conductor pads respectively arranged on the surface of the mounting substrate so as to face the bump connection conductor pads, and penetrate into the mounting substrate;
A plurality of second columnar conductors for connecting each of the second ground conductor pads to a ground conductor pattern on the back surface of the mounting substrate; and a plurality of bump connection portions inserted between the dielectric substrate and the mounting substrate. 2. The high-frequency circuit device according to claim 1, wherein the ground conductor connecting means comprises a conductive pad for use and a plurality of conductive bumps respectively connecting the second ground conductive pads. 6. A plurality of bump connection conductor pads respectively connected to a ground conductor pattern on a surface of a dielectric substrate via a resistor, and a plurality of bump connection conductor pads on a surface of a mounting substrate so as to face the bump connection conductor pads. A plurality of arranged ground conductor pads, a plurality of columnar conductors penetrating into the inside of the mounting board, and connecting each of the ground conductor pads to a ground conductor pattern on the back surface of the mounting board, 4. The ground conductor connecting means according to claim 3, wherein said conductor is connected between said mounting boards and comprises a plurality of conductive bumps for connecting said bump connecting conductor pads and said ground conductor pads respectively. High frequency circuit device. 7. A plurality of first ground conductor pads respectively disposed on a front surface of a dielectric substrate, and a plurality of first ground conductor pads penetrating into the inside of the dielectric substrate, and each of the first ground conductor pads is connected to a back surface of the dielectric substrate. A plurality of first pillar-shaped conductors respectively connected to the ground conductor patterns of the above, a plurality of bump connection conductor pads respectively arranged on the surface of the mounting board so as to face the first ground conductor pads, and A plurality of second ground conductor pads respectively connected to the bump connection conductor pads and a resistor on the surface of the substrate, and penetrated into the inside of the mounting substrate;
A plurality of second columnar conductors for connecting each of the second ground conductor pads to a ground conductor pattern on the back surface of the mounting substrate, and a plurality of second columnar conductors inserted between the dielectric substrate and the mounting substrate, and 2. The high-frequency circuit device according to claim 1, wherein said ground conductor pad and a plurality of conductive bumps respectively connecting said bump connection conductor pads constitute ground conductor connection means. 8. A plurality of bump connection conductor pads respectively arranged on the surface of the mounting board, and a plurality of ground conductor pads respectively connected to the bump connection conductor pads on the surface of the mounting board via resistors. And, a plurality of columnar conductors penetrating into the inside of the mounting substrate and connecting each of the ground conductor pads to the ground conductor pattern on the back surface of the mounting substrate, and inserted between the dielectric substrate and the mounting substrate, 4. The high-frequency circuit device according to claim 3, wherein a ground conductor connecting means is constituted by a ground conductor pattern on the surface of the dielectric substrate and a plurality of conductive bumps respectively connecting the bump connecting conductor pads. 9. A plurality of first ground conductor pads respectively disposed on a front surface of a dielectric substrate, and a plurality of first ground conductor pads penetrating into the inside of the dielectric substrate, and each of the first ground conductor pads is connected to a back surface of the dielectric substrate. A plurality of first columnar conductors respectively connected to the ground conductor patterns, a plurality of second ground conductor pads respectively arranged on the surface of the mounting board so as to face the first ground conductor pads, and A plurality of second columnar conductors penetrating into the mounting substrate and connecting each of the second ground conductor pads to the ground conductor pattern on the back surface of the mounting substrate; and between the dielectric substrate and the mounting substrate. Inserted,
2. The high-frequency circuit device according to claim 1, wherein said first ground conductor pad and a plurality of resistive bumps respectively connecting said second ground conductor pads constitute ground conductor connection means. 10. A plurality of ground conductor pads respectively arranged on a surface of a mounting board, and a plurality of ground conductor pads penetrating into the inside of the mounting board and connecting each of the ground conductor pads to a ground conductor pattern on a back surface of the mounting board. Ground conductor connecting means which is inserted between the columnar conductor and the plurality of resistive bumps which are inserted between the dielectric substrate and the mounting substrate and connect the ground conductor pattern on the surface of the dielectric substrate and the respective ground conductor pads. 4. The high-frequency circuit device according to claim 3, wherein: 11. A slit-shaped pattern is provided by removing a part of the ground conductor pattern on the surface of the dielectric substrate, and a resistive film pattern for electrically connecting the ground conductor patterns on both sides of the slit-shaped pattern is provided. The high-frequency circuit device according to claim 3, wherein: 12. A slit pattern is formed in the ground conductor pattern on the surface of the dielectric substrate in a notch shape from the outer peripheral side of the dielectric substrate, and the length of the slit pattern is a quarter of the wavelength of the high frequency signal. 12. The high-frequency circuit device according to claim 11, wherein the wavelength is 1 or an odd multiple of the wavelength. 13. A slit-shaped pattern is formed in a hole shape inside a ground conductor pattern on a surface of a dielectric substrate,
The length of the slit pattern is 2 of the wavelength of the high-frequency signal.
12. The high-frequency circuit device according to claim 11, wherein the wavelength is a fraction or an integral multiple of the wavelength. 14. A first conductive bump inserted between a dielectric substrate and a mounting board to connect a strip conductor pattern on an input side of a high-frequency circuit to a strip conductor pattern on a surface of the mounting board; 14. A strip conductor connecting means comprising a strip conductor pattern on the output side of a circuit and a second conductive bump for connecting the strip conductor pattern on the surface of the mounting board. The high-frequency circuit device according to any one of the preceding claims. 15. The apparatus according to claim 1, wherein one of the strip conductor patterns connected to the input side and the output side of the high-frequency circuit is deleted. The high-frequency circuit device according to the item.