JP2001148446A - Semiconductor device and manufacturing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To simplify a manufacturing process, in a manufacturing method of a BGA-type semiconductor device. SOLUTION: A semiconductor device manufacturing method comprises a first step where a semiconductor chip and a resin tape, where leads are provided are bonded together through the intermediary of an elastic material, a second step where the leads are deformed and connected to the bonding pads of the semiconductor chip, and a third step where joints between the leads and bonding pads, the semiconductor chip, and the side of the elastic material are sealed up. A first opening which overlaps with the bonding pads of the semiconductor chip and a second opening which corresponds to the peripheral part of the semiconductor chip, where no bonding pads are provided are provided in advance to the resin tape, and the leads corresponding to the bonding pads of the chip are extended traversing the first opening.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device and a method of manufacturing the same, and more particularly, to a fine pitch BGA (Ba
The present invention relates to a technology that is effective when applied to a method of manufacturing a semiconductor device of the ll Grid Array (hereinafter simply referred to as BGA) type.

[0002]

2. Description of the Related Art Conventionally, for example, there is a BGA type semiconductor device as an ultra-small semiconductor device having the same size as a semiconductor chip. In the BGA-type semiconductor device, for example, a surface of a semiconductor chip on which bonding pads are formed and a resin tape (transport tape) provided with a plurality of leads are joined via an elastic body called an elastomer. A plurality of leads provided on the resin tape are connected to bonding pads of the semiconductor chip in an S-shape, and a connecting portion between the leads and the bonding pads is sealed by applying a potting resin. One end of the lead is extended to a surface on the back side of a bonding interface of the resin tape with the elastomer, and a bump (mounting) for mounting on a printed board or the like is provided on the extended portion (land). .

In the BGA type semiconductor device, a joint portion between the semiconductor chip and the elastomer is exposed only by applying a potting resin to a connection portion between the lead and the bonding pad and sealing it. Therefore, the penetration of moisture or the like from the exposed joint portion between the semiconductor chip and the elastomer causes the separation of the elastomer from the semiconductor chip, and the reliability of the semiconductor device is reduced due to disconnection of the lead due to deformation of the semiconductor chip or the resin tape. Therefore, it is necessary to apply a potting resin to the side surfaces of the semiconductor chip and the elastomer, and to seal the elastomer so that the elastomer is not exposed.

[0004] In the BGA type semiconductor device, a method of sealing the side surfaces of the semiconductor chip and the elastomer with a potting resin is as shown in FIGS. 8 (a) and 8 (b). A resin injecting tape 13 is adhered to the back surface of the bonding interface with the elastomer, and a large amount of potting resin 8 is injected from an opening 3 provided at a position overlapping the bonding pad 7 of the resin tape 1, and the lead When the potting resin 8 is applied to a connection portion between the semiconductor chip 5 and the bonding pad 7, the potting resin 8 leaked between the resin tape 1 and the resin injecting tape 13 is entirely removed from the side surfaces of the semiconductor chip 5 and the elastomer 6. There is a way to spread it.

In the case of a so-called center pad type semiconductor chip in which the bonding pads 7 on the semiconductor chip 1 are linearly arranged near the center of the semiconductor chip, the bonding pads are provided at positions overlapping the bonding pads 7. If a resin is injected through the opening, it is difficult to seal the side surface parallel to the direction in which the bonding pads 7 are arranged. Therefore, a resin injecting tape 13 is stuck on the resin tape side, an opening of the resin tape is closed, and a large amount of potting resin is applied from the semiconductor chip side so that the potting resin does not leak from the opening. Thus, the entire semiconductor chip 5 is covered.

[0006]

However, in the conventional technique, when a potting resin is injected or applied, a step of attaching the resin injection tape is performed, and after the potting resin is cured, the resin injection tape is hardened. Since the number of steps of removing the tape and removing the potting resin overflowing from the outside of the semiconductor chip is increased, there is a problem that the manufacturing process becomes complicated and the manufacturing cost increases.

Further, when the potting resin is injected or applied, a large amount of resin is used to spread the potting resin over the entire side surface of the semiconductor chip and the elastomer, so that the manufacturing cost is further increased. There was a problem.

It is an object of the present invention to provide a technique capable of preventing a decrease in device reliability in a BGA type semiconductor device.

Another object of the present invention is to provide a technique capable of simplifying a manufacturing process in a method of manufacturing a BGA type semiconductor device.

Another object of the present invention is to provide a technique capable of reducing a manufacturing cost in a method of manufacturing a BGA type semiconductor device.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0012]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

(1) A semiconductor chip and a resin tape provided with a plurality of leads, which is joined to a surface of the semiconductor chip on which bonding pads are provided with an elastic body interposed therebetween, wherein the plurality of leads are provided. Is deformed, is electrically connected to the bonding pad of the semiconductor chip, and is a semiconductor device in which the connection portion is sealed, wherein the side surfaces of the semiconductor chip and the elastic body are sealed with resin. is there.

(2) a step of joining a semiconductor chip and a resin tape provided with a plurality of leads with an elastic body interposed therebetween, a step of deforming the leads, and connecting the leads to bonding pads of the semiconductor chip; A method of manufacturing a semiconductor device, comprising a step of sealing a connection portion between a lead and a bonding pad, and a side surface of the semiconductor chip and an elastic body, wherein the resin tape has a first opening overlapping with a bonding pad of the semiconductor chip. A second opening corresponding to a portion where the bonding pad is not provided near the outer periphery of the semiconductor chip is provided in advance, and a lead corresponding to the bonding pad of the semiconductor chip is provided in the first opening. Crossing.

(3) In the method of manufacturing a semiconductor device according to the means (2), one end of the second opening of the resin tape is outside the outer periphery of the semiconductor chip in a plane.

(4) In the method of manufacturing a semiconductor device according to the means (3), one end of the second opening of the resin tape is 0.1 mm in plan from the outer periphery of the semiconductor chip.
A method of manufacturing a semiconductor device, which is 0.2 mm outside of the semiconductor device.

(5) In the method of manufacturing a semiconductor device according to any one of the means (2) to (4), a step of sealing a connection portion between the lead and the bonding pad and a side surface of the semiconductor chip and the elastic body. Injects resin from the first opening and the second opening of the resin tape.

(6) In the method of manufacturing a semiconductor device according to any one of the means (2) to (4), a step of sealing a connection portion between the lead and the bonding pad and a side surface of the semiconductor chip and the elastic body. Injects resin from the semiconductor chip side along the side surface of the semiconductor chip.

Hereinafter, the present invention will be described in detail together with embodiments (examples) with reference to the drawings.

In all the drawings for describing the embodiments, components having the same function are denoted by the same reference numerals, and their repeated description will be omitted.

[0021]

(Embodiment 1) FIGS. 1 and 2 are a schematic plan view and a schematic cross-sectional view, respectively, showing a schematic configuration of a semiconductor device according to Embodiment 1 of the present invention. FIG. 2
FIG. 2A is a schematic cross-sectional view taken along the line AA ′ in FIG. 1, FIG.
FIG. 2 is a schematic sectional view taken along line BB ′ of FIG. FIG.
Shows the stage before the semiconductor device is separated from the resin tape, a potting resin for sealing to make the relationship between the semiconductor chip and the resin tape easier to understand, and an elastic body interposed between the semiconductor chip and the resin tape. Is omitted.

1 and 2, 1 is a resin tape,
2 is a lead, 2 'is a remaining lead, 2A is a land, 3A,
3B is a first opening, 4A and 4B are second openings, 5 is a semiconductor chip, 6 is an elastic body (elastomer), 7 is a bonding pad, 8 is a potting resin, and 9 is a bump.

The semiconductor device of the first embodiment is a fine pitch BGA type semiconductor device, as shown in FIGS. 1 and 2, a resin tape 1 provided with a plurality of leads 2 and an outer periphery in a long side direction. A semiconductor chip 5 in which bonding pads 7 are linearly arranged in the vicinity; an elastic body (hereinafter referred to as an elastomer) 6 interposed between the resin tape 1 and the semiconductor chip 5; a connection between the leads 2 and the bonding pads 7 And a potting resin 8 for sealing the side surfaces of the semiconductor chip 5 and the elastomer 6, and one end of the lead 2 is connected to a land 2A which is drawn out to the back surface of the bonding interface of the resin tape 1 with the elastomer 6. It is composed of bumps 9. In FIG. 1, the lead 2 is provided on the bonding interface (lower surface) of the resin tape 1 with the elastomer 6, and the connecting portion between the lead 2 and the bonding pad 7 is sealed with a potting resin 8. Because it is stopped, it is not actually visible.

The lead 2 provided on the resin tape 1
Are electrically connected to the bonding pads 7 of the semiconductor chip 5 by being deformed into an S-shape as shown in FIG. In the BGA type semiconductor device as in the first embodiment, the resin tape 1 and the semiconductor chip 5 are formed by the S-shaped lead 2 and the elastomer 6 interposed between the resin tape 1 and the semiconductor chip 5. Thermal stress caused by the difference in thermal expansion coefficient between the two can be reduced.

The elastomer 6 has, for example, a three-layer structure in which a silicon-based adhesive layer is provided on both sides of a core layer made of an elastic resin. In addition, a core layer using a fluorine-based porous material is provided, and an epoxy-based adhesive layer is provided on both sides thereof, or an acrylic-modified epoxy-based adhesive layer is provided on both sides of a polyimide resin core layer. May be.

As shown in FIG. 1, the resin tape 1 has first openings 3A and 3B overlapping the bonding pads 7 provided in the long side direction of the semiconductor chip 5, and the vicinity of the outer periphery in the short side direction, That is, the second openings 4A and 4B corresponding to the portions where the bonding pads 7 are not provided near the outer periphery of the semiconductor chip 5 are provided.

As shown in FIG. 2A, in the semiconductor device of the first embodiment, a connection portion between the lead 2 and the bonding pad 7 near the first opening 3A of the resin tape 1 and the first opening are formed. As shown in FIG. 2B, the side surfaces of the semiconductor chip 5 and the elastomer 6 corresponding to a certain direction of the portion 3A are sealed with the potting resin 8, and at the same time, the second opening of the resin tape 1 is formed. The side surfaces of the semiconductor chip 5 and the elastomer 6 corresponding to a certain direction of 4A are also sealed by the potting resin 8. Also,
Although not shown, the direction in which the other first opening 3B is located is sealed with a potting resin 8 in the same configuration as the first opening 3A shown in FIG. The direction in which the opening 4B is located is also the second opening 4 shown in FIG.
It is sealed with a potting resin 8 in the same configuration as A. That is, the entire side surfaces of the semiconductor chip 5 and the elastomer 6 are sealed with the potting resin 8.
As the potting resin 8, for example, an epoxy resin is used.

FIGS. 3 to 5 are schematic views for explaining a method of manufacturing the semiconductor device of the first embodiment. FIG. 3 is a plan view showing the structure of a resin tape used for manufacturing the semiconductor device of the first embodiment. 4 and FIG. 5 show the first embodiment.
FIG. 14 is a schematic cross-sectional view of each manufacturing step of the semiconductor device.
The schematic sectional views of FIGS. 4 and 5 are taken along the line AA ′ of FIG.
Corresponds to the cross section at the line.

In FIG. 3, 2B is a notch of the lead, L1 is a lead width, L2 is a width of the notch 2B of the lead, and L3 is an opening width of the first opening 3A. FIG.
In the figure, 10 is a syringe, and 11 is a nozzle.

Hereinafter, the first embodiment will be described with reference to FIGS.
A method of manufacturing a semiconductor device will be described. First, FIG.
The first openings 3A and 3B are provided at positions overlapping the bonding pads of the semiconductor chip to be bonded, as shown in FIG. 2, and a second portion corresponding to a portion where the bonding pad is not provided near the outer periphery of the semiconductor chip. Opening 4
A resin tape 1 provided with A and 4B is prepared. The resin tape 1 is provided with a plurality of leads 2 corresponding to the bonding pads of the semiconductor chip, and the leads traverse the first openings 3A and 3B. FIG.
Also, the leads 2 are provided on the lower surface of the resin tape 1, and are actually visible only at the first openings 3A and 3B.

One end of the lead 2 is connected to the first opening 3
A, 3B and a back side of a surface of the resin tape 1 on which the leads 2 are provided as lands 2A for providing bumps for mounting on a printed circuit board or the like in a region surrounded by the second openings 4A, 4B. Has been drawn to the surface.

As shown in FIG. 3B, a recess (notch) 2B is provided in a portion of the lead 2 which crosses the first opening 3A, and a bonding pad between the lead 2 and the semiconductor chip is provided. When the lead 2 is connected, the lead 2 is easily cut at the notch 2B. Although not shown, the first opening 3B has the same configuration.

The resin tape 1 has a thickness of about 50, for example.
The leads 2 are formed, for example, by printing a gold (Au) film on the resin tape 1 in accordance with a predetermined wiring pattern. The lead 2 is made of copper (C
u) The film may be gold-plated. The lead 2 has a lead width L1 shown in FIG. 3B of about 30 microns and a notch portion width L2 of about 15 microns to 20 microns.
Micron. Further, the opening width L of the first opening 3A is set.
3 is about 0.5 mm, and although not shown, it is assumed that the opening width of the second openings 4A and 4B is also about 0.5 mm.

The resin tape 1 is actually a strip-shaped transport tape, and has first openings 3A and 3B and second openings 4A and 4B as shown in FIG. , A large number of regions where the leads 2 are provided are continuous.

Next, as shown in FIG. 4A, an adhesive layer of an elastomer 6 is temporarily adhered to the surface of the resin tape 1 for conveyance on which the leads 2 are provided. The tape 1 and the elastomer 6 are joined. The elastomer 6
Although not shown in the drawings, the first openings 3A and 3B
And in a region surrounded by the second openings 4A and 4B.

Next, the bonding pads 7 of the semiconductor chip 5 are aligned with the leads 2 of the resin tape 1, and the semiconductor chip 5 is temporarily attached to the adhesive layer of the elastomer 6, as shown in FIG. After bonding, the elastomer 6 and the semiconductor chip 5 are joined by heating.

Next, as shown in FIG. 4C, the leads 2 provided on the resin tape 1 are deformed into an S shape,
The leads 2 and the bonding pads 7 are electrically connected. The electrical connection between the lead 2 and the bonding pad 7 is made by first using a bonding tool provided with a projection for holding the lead 2 in a direction crossing the first opening 3A of the lead 2 in the direction of the bonding pad 7. And ultrasonically press bonded. At this time, the lead 2 is cut at the notch 2B shown in FIG. 3 (b), and the lead 2 'is left outside the first opening 3A of the resin tape 1. Although not shown, the lead 2 on the other side of the first opening 3B is connected to the bonding pad 7 in the same manner.

Next, the temperature around the resin tape 1 is set to 40
5C, the epoxy potting resin 8 filled in the syringe 10 provided with the nozzle 11 is pressurized at, for example, a pressure of 3 MPa, and a speed of 3 mm / s, the syringe 10 is pushed out while being moved, and the first opening 3 of the resin tape 1 is moved.
A is injected into a connection portion between the lead 2 and the bonding pad 7. At this time, part of the potting resin 8 flows out to the side surface of the semiconductor chip 5 and the lead 2
A connection portion between the semiconductor chip 5 and the elastomer 6 and the side surface near the first opening 3A are sealed with the potting resin 8. Although not shown, the potting resin 8 is similarly injected from the other first opening 3B and second openings 4A and 4B. At this time, for example, as shown in FIG. 2B, a part of the potting resin 8 injected from the second opening 4A is formed on the side of the semiconductor chip 5 on the side of the second opening 4A, 4B. And the side surfaces of the semiconductor chip 5 and the elastomer 6 near the second opening 4A are sealed. Therefore, the entire side surface of the semiconductor chip 5 is sealed with the potting resin 8. The amount of the potting resin 8 to be injected depends on the chip size of the semiconductor device to be manufactured and the like.
The amount of pressure and the amount of movement of the syringe 10 are adjusted so that the potting resin 8 covers the side surface of the semiconductor chip 5.

After the injection of the potting resin 8, for example, after preheating at 80 ° C. for 30 minutes,
After heating at 0 ° C. for 30 minutes to cure the potting resin 8, bumps 9 such as solder or gold (Au) are transferred onto the lands 2A of the resin tape 1 so that the resin tape 1 And cut into individual semiconductor devices.

As described above, according to the first embodiment, in the method of manufacturing a BGA type semiconductor device, the first opening portions 3A and 3B overlapping the bonding pads of the semiconductor chip 5 are formed in the resin tape 1. In addition, second openings 4A and 4B corresponding to portions where the bonding pads are not provided near the outer periphery of the semiconductor chip 5 are provided, and potting is performed from the first openings 3A and 3B and the second openings 4A and 4B. By injecting the resin 8, it is possible to seal the entire side surfaces of the semiconductor chip 5 and the elastomer 6 with a small amount of the potting resin 8, so that the manufacturing cost can be reduced.

The second opening 4 is formed in the resin tape 1.
A and 4B are provided, and the potting resin 8 is also injected from the second openings 4A and 4B, so that the semiconductor chip 5 is formed.
The potting resin 8 can be efficiently injected also into the side surface where the bonding pad is not provided, and the entire side surface of the semiconductor chip 5 and the elastomer 6 can be sealed.
Unlike the conventional case, there is no need to provide a step of attaching a separate tape for injecting the resin, so that the manufacturing process can be simplified. Therefore, the manufacturing cost can be further reduced.

Further, since the entire side surfaces of the semiconductor chip 5 and the elastomer 6 can be sealed, peeling of the connection surface between the semiconductor chip 5 and the elastomer 6 does not easily occur, and the reliability of the device is improved.

As shown in FIG. 5D, when the potting resin 8 is injected from the first openings 3A and 3B and the second openings 4A and 4B of the resin tape 1, the first opening Potting resin 8 overflowing from 3A, 3B or the second openings 4A, 4B may cover the lands 2A, and the bumps 9 may cause poor connection. Then, as shown in FIG. 5 (e), the front and back of the resin tape 1 to which the semiconductor chip 5 is bonded are exchanged, and the syringe 10 is caused to make one round along the side surface of the semiconductor chip 5. The potting resin 8 may be injected into a gap formed between the chip 5 and the resin tape 1. At this time, the potting resin 8 is easily injected into the gap between the semiconductor chip 5 and the resin tape 1 by making the nozzle 11 be pushed out in a horizontal direction at an angle. In this case, since the potting resin 8 to be injected is small, the potting resin 8 in the first openings 3A and 3B and the second openings 4A and 4B is caused by surface tension as shown in FIG. And the resin tape 1
It does not cover the lands 2A and does not sag, so that the first openings 3A and 3B and the second openings 4A and 4B need not be covered by a separate tape as in the related art. Good.

In the first embodiment, the second openings 4A and 4B are provided on the inside of the semiconductor chip 5 in a planar manner. However, the present invention is not limited to this. One end of each of the second openings 4A and 4B is provided. However, it may be outside in plan view from the outer periphery of the semiconductor chip 5.

FIG. 6 is a schematic view showing a modification of the semiconductor device of the first embodiment. FIG. 6A is a schematic plan view, and FIG.
FIG. 7B is a schematic cross-sectional view taken along line CC ′ of FIG. In FIG. 6, OS is the distance between one end of the second opening 4A and the outer periphery of the semiconductor chip 5. FIG. 6 (a)
Is similar to the schematic plan view shown in FIG. 1 above, with the potting resin 8 and the elastomer 6 omitted. Since the configuration other than the second openings 4A and 4B is the same as that shown in FIGS. 1 and 2,
The description is omitted.

As in the first embodiment, the second openings 4A,
When the 4B is provided inside the semiconductor chip 5 in a plan view, it may be difficult to inject the potting resin 8 because the opening width of the second opening is narrow. In such a case, as shown in FIGS. 6A and 6B, the second
By widening the opening width of the second opening so that one end of each of the openings 4A and 4B comes outside the semiconductor chip 5 in a planar manner, the resin can flow easily. Injection can be performed, and the entire side surfaces of the semiconductor chip 5 and the elastomer 6 can be more reliably sealed.

The distance OS between one end of the second opening 4A, which is two-dimensionally outside the outer periphery of the semiconductor chip 5 and the outer periphery of the semiconductor chip 5, is preferably about 0.2 mm.

(Embodiment 2) FIG. 7 shows Embodiment 2 according to the present invention.
FIG. 7 is a schematic diagram showing a schematic configuration of the semiconductor device shown in FIG.
(A) is a schematic plan view, and (b) of FIG.
It is sectional drawing in the D 'line. In FIG. 7A, FIG.
6A and FIG. 6A, showing a stage before separation from the resin tape, in which a potting resin for sealing and an elastomer are omitted. In FIG. 7, reference numeral 12 denotes a center pad type semiconductor chip (center pad chip).

The basic configuration of the semiconductor device of the second embodiment is the same as that of the semiconductor device of the first embodiment, and a detailed description thereof will be omitted.

In the semiconductor device of the second embodiment, the bonding pad 7 uses the center pad chip 12 which is linearly arranged near the center of the semiconductor chip. In this case, the resin tape 1 has the bonding pad 7
And second openings 4A and 4B near the outer periphery of the semiconductor chip 5 in the long side direction. One ends of the second openings 4A and 4B may be outside the outer periphery of the semiconductor chip 5 as described in the first embodiment. The lead 2 connected to the bonding pad 7 extends from the first opening 3 in the direction of the second opening 4A, 4B, and extends between the first opening 2A and the second opening 4A.
It has been withdrawn as A.

The manufacturing method of the semiconductor device according to the second embodiment is substantially the same as that of the first embodiment, and therefore, detailed description is omitted.

In the method of manufacturing a semiconductor device according to the second embodiment, since there is no opening along the short side direction of the center pad chip 12, the first opening 3 and the second openings 4A and 4B When the potting resin 8 is injected, it is difficult to seal the entire side surface of the center pad chip 12 in the short side direction and the elastomer 6. In addition, it is not possible to confirm that the entire side surfaces of the center pad chip 12 and the elastomer 6 are sealed only after heating and curing. Therefore, when the center pad chip 12 is used as in the second embodiment, the potting resin 8 is injected along the side surface of the center pad chip 12 as in the case shown in FIG. Thus, the side surface in the short side direction having no opening can be reliably sealed.

In the case of the semiconductor device using the center pad chip 12 as in the second embodiment, the center pad is formed by injecting the potting resin 8 through the first opening 3 and the second openings 4A and 4B. The entire side surface of the chip (semiconductor chip) 12 can be sealed with a small amount of the potting resin 8, so that the manufacturing process can be simplified and the manufacturing cost can be reduced.

As described above, the present invention has been specifically described based on the above-described embodiment. However, the present invention is not limited to the above-described embodiment, and may be variously modified without departing from the gist thereof. Of course.

[0055]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows. (1) In a BGA type semiconductor device, a decrease in device reliability can be prevented. (2) In the method of manufacturing a BGA type semiconductor device, the manufacturing steps can be simplified. (3) In the method of manufacturing a BGA type semiconductor device, manufacturing costs can be reduced.

[Brief description of the drawings]

FIG. 1 is a schematic plan view illustrating a schematic configuration of a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view showing a schematic configuration of the semiconductor device of the first embodiment.

FIG. 3 is a schematic plan view and a partially enlarged view showing a schematic configuration of a resin tape used for manufacturing the semiconductor device of the first embodiment.

FIG. 4 is a schematic cross-sectional view in each manufacturing step of the semiconductor device of the first embodiment.

FIG. 5 is a schematic cross-sectional view in each manufacturing step of the semiconductor device of the first embodiment.

FIG. 6 is a schematic plan view and a schematic sectional view showing a modification of the first embodiment.

FIG. 7 is a schematic plan view and a schematic cross-sectional view illustrating a schematic configuration of a semiconductor device according to Example 2 of the present invention.

FIG. 8 is a view for explaining a conventional method for manufacturing a semiconductor device.

[Explanation of symbols]

1 ... resin tape, 2 ... lead, 2 '... lead remaining, 2A
... land, 2B ... notch, 3, 3A, 3B ... first opening, 4A, 4B ... second opening, 5 ... semiconductor chip, 6 ...
Elastic body (elastomer), 7 ... bonding pad, 8 ...
Potting resin, 9: bump, 10: syringe, 11
... Nozzle, 12 ... Semiconductor chip (center pad chip), 13 ... Resin injection tape.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Tomoji Suda 3-3-2 Fujibashi, Ome-shi, Tokyo Within Hitachi Tokyo Electronics Co., Ltd. (72) Inventor Kazunori Higuchi 3-2-2 Fujibashi, Ome-shi, Tokyo Hitachi East F-term in Kyoto Electronics Co., Ltd. (reference) 4M109 AA01 BA05 CA05 DA03 DA04 DB16 5F061 AA01 BA05 CA05

Claims (6)

[Claims] 1. A semiconductor chip comprising a resin tape provided with a plurality of leads, which is joined to a surface of the semiconductor chip on which bonding pads are provided with an elastic body interposed therebetween, wherein the plurality of leads are provided. A semiconductor device which is deformed and electrically connected to a bonding pad of the semiconductor chip, and the connection portion is sealed, wherein the side surfaces of the semiconductor chip and the elastic body are sealed with a resin. Semiconductor device. 2. a step of joining a semiconductor chip and a resin tape provided with a plurality of leads with an elastic body interposed therebetween;
A method of manufacturing a semiconductor device, comprising: deforming the lead and connecting the semiconductor chip to a bonding pad of the semiconductor chip; and sealing a connection portion between the lead and the bonding pad and a side surface of the semiconductor chip and the elastic body. A first opening overlapping the bonding pad of the semiconductor chip, and a second opening corresponding to a portion where the bonding pad is not provided near the outer periphery of the semiconductor chip, the resin tape is provided in advance; A method for manufacturing a semiconductor device, wherein a lead corresponding to a bonding pad of the semiconductor chip crosses the first opening. 3. The method of manufacturing a semiconductor device according to claim 2, wherein one end of the second opening of the resin tape is
A method for manufacturing a semiconductor device, wherein the semiconductor device is planarly outside the outer periphery of the semiconductor chip. 4. The method of manufacturing a semiconductor device according to claim 3, wherein one end of the second opening of the resin tape is
A method of manufacturing a semiconductor device, wherein the semiconductor chip is 0.1 mm to 0.2 mm outward in plan from the outer periphery of the semiconductor chip. 5. The method of manufacturing a semiconductor device according to claim 2, wherein the step of sealing a connection portion between the lead and the bonding pad and a side surface of the semiconductor chip and the elastic body includes: A method of manufacturing a semiconductor device, comprising: injecting a resin through a first opening and a second opening of the resin tape. 6. The method of manufacturing a semiconductor device according to claim 2, wherein the step of sealing a connection portion between the lead and the bonding pad and a side surface of the semiconductor chip and the elastic body includes: From the semiconductor chip side,
A method of manufacturing a semiconductor device, comprising injecting a resin along a side surface of the semiconductor chip.