JP2001133979A5 - - Google Patents

Description

（式中、Ｒ¹，Ｒ²，Ｒ³の少なくとも一つがフッ素原子又はトリフルオロメチル基であり、残りは水素原子又は炭素数１〜２０の直鎖状、分岐状もしくは環状のアルキル基である。Ｒ⁴は酸不安定基、Ｒ⁵は酸安定基であり、０＜ｋ≦１、０≦ｍ＜１、０≦ｎ＜１の範囲であり、ｋ＋ｍ＋ｎ＝１である。）
請求項３：
更に、アクリル酸誘導体及び／又はメタクリル酸誘導体に基づく繰り返し単位を含有する請求項１又は２記載の高分子化合物。[0011]
Claim 2:
The high molecular compound containing the repeating unit shown by following General formula (2).
[0001]
[Chemical formula 4]

(Wherein, at least one of R ¹ , R ² and R ³ is a fluorine atom or a trifluoromethyl group, and the rest is a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms) R ⁴ is an acid labile group, R ⁵ is an acid stable group, and 0 <k ≦ 1, 0 ≦ m <1, 0 ≦ n <1, and k + m + n = 1)
Claim 3:
The polymer compound according to claim 1 or 2, further comprising a repeating unit based on an acrylic acid derivative and / or a methacrylic acid derivative.

[0013]
Claim 4:
A resist material comprising the polymer compound according to claim 1, 2 or 3.

[0014]
Claim 5:
(A) The polymer compound according to claim 1, 2 or 3;
(B) organic solvents,
(C) A chemically amplified positive resist composition comprising an acid generator.

[0015]
Claim 6:
(A) The polymer compound according to claim 1, 2 or 3;
(B) organic solvents,
(C) acid generator,
(D) A chemically amplified negative resist composition comprising a crosslinking agent.

[0016]
Claim 7:
The resist material according to claim 5, further comprising (F) a dissolution inhibitor.

[0017]
Claim 8:
The resist material according to claim 5, 6 or 7, further comprising (E) a basic compound.

[0018]
Claim 9:
(1) applying a resist material according to any one of claims 4 to 8 on a substrate;
(2) Then, after the heat treatment, exposing with a high energy ray or electron beam having a wavelength of 300 nm or less through a photomask
(3) A pattern forming method comprising the steps of: performing heat treatment as necessary; and developing using a developer.

Claims (9)

The high molecular compound containing the repeating unit shown by following General formula (1).

(Wherein, at least one of R ¹ , R ² and R ³ is a fluorine atom or a trifluoromethyl group, and the rest is a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms) R ⁴ is an acid labile group, in the range of 0 <k ≦ 1, 0 ≦ m <1, and k + m = 1) The high molecular compound containing the repeating unit shown by following General formula (2).

(Wherein, at least one of R ¹ , R ² and R ³ is a fluorine atom or a trifluoromethyl group, and the rest is a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms) R ⁴ is an acid labile group, R ⁵ is an acid stable group, and 0 <k ≦ 1, 0 ≦ m <1, 0 ≦ n <1, and k + m + n = 1) The polymer compound according to claim 1 or 2, further comprising a repeating unit based on an acrylic acid derivative and / or a methacrylic acid derivative. A resist material comprising the polymer compound according to claim 1, 2 or 3. (A) The polymer compound according to claim 1, 2 or 3;
(B) organic solvents,
(C) A chemically amplified positive resist composition comprising an acid generator. (A) The polymer compound according to claim 1, 2 or 3;
(B) organic solvents,
(C) acid generator,
(D) A chemically amplified negative resist composition comprising a crosslinking agent. The resist material according to claim 5, further comprising (F) a dissolution inhibitor. The resist material according to claim 5, 6 or 7, further comprising (E) a basic compound. (1) applying a resist material according to any one of claims 4 to 8 on a substrate;
(2) Then, after the heat treatment, exposing with a high energy ray or electron beam having a wavelength of 300 nm or less through a photomask
(3) A pattern forming method comprising the steps of: performing heat treatment as necessary; and developing using a developer.