JP2001233917A5

JP2001233917A5 -

Info

Publication number: JP2001233917A5
Application number: JP2000375504A
Authority: JP
Filing date: 2000-12-11
Publication date: 2004-10-28
Anticipated expiration: 2020-12-11

Description

【００１０】
即ち、本発明は、下記高分子化合物、化学増幅レジスト材料及びパターン形成方法を提供する。
［１］上記一般式（１）で示される、主鎖がフッ素化されたアクリル誘導体を繰り返し単位として含むことを特徴とする高分子化合物、
［２］更に、後述する式（５−１）〜（５−４４）から選ばれる１種以上の繰り返し単位を含む［１］記載の高分子化合物、
［３］上記［１］又は［２］の高分子化合物を含むことを特徴とするレジスト材料、
［４］（Ａ）上記［１］又は［２］の高分子化合物、
（Ｂ）有機溶剤、
（Ｃ）酸発生剤
を含有することを特徴とする化学増幅ポジ型レジスト材料、
［５］更に、塩基性化合物を含有する上記レジスト材料、
［６］更に、溶解阻止剤を含有する上記レジスト材料、
［７］（１）上記レジスト材料を基板上に塗布する工程と、
（２）次いで加熱処理後、フォトマスクを介して波長３００ｎｍ以下の高エネルギー線もしくは電子線で露光する工程と、
（３）必要に応じて加熱処理した後、現像液を用いて現像する工程と
を含むことを特徴とするパターン形成方法。[0010]
That is, the present invention provides the following polymer compound, chemically amplified resist material and pattern forming method.
[1] A polymer compound comprising, as a repeating unit, an acrylic derivative whose main chain is fluorinated, represented by the above general formula (1),
[2] The polymer compound according to [1], further comprising one or more repeating units selected from Formulas (5-1) to (5-44) described later,
[3] A resist material comprising the polymer compound of the above-mentioned [1] or [2],
[4] (A) The polymer compound of the above-mentioned [1] or [2],
(B) organic solvents,
(C) Chemically amplified positive resist material characterized by containing an acid generator,
[5] The above resist material further containing a basic compound,
[6] The above resist material further containing a dissolution inhibitor,
[7] (1) A step of applying the above-mentioned resist material on a substrate,
(2) Then, after the heat treatment, exposing with a high energy ray or electron beam having a wavelength of 300 nm or less through a photomask
(3) A pattern forming method comprising the steps of: performing heat treatment as necessary; and developing using a developer.

Claims

What is claimed is: 1. A polymer compound comprising, as a repeating unit, an acrylic derivative whose main chain is fluorinated, represented by the following general formula (1).

(Wherein, R ¹ , R ² and R ^{3 each} represents a hydrogen atom, a fluorine atom, a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, or a fluorinated alkyl group, R ¹ , R 2 ^At least one of R ² and R ³ contains a fluorine atom, R ⁴ is an acid labile group)

The polymer compound according to claim 1, further comprising one or more repeating units selected from the following formulas (5-1) to (5-44).

(Wherein, R ¹⁷ , R ¹⁸ , R ¹⁹ and R ^{20 each} represents a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms.)

A resist material comprising the polymer compound according to claim 1 or 2.

(A) The polymer compound according to claim 1 or 2,
(B) organic solvents,
(C) A chemically amplified positive resist composition comprising an acid generator.

Furthermore, the resist material of Claim 4 containing a basic compound.

The resist material according to claim 4, further comprising a dissolution inhibitor.

(1) applying a resist material according to any one of claims 3 to 6 on a substrate;
(2) Then, after the heat treatment, exposing with a high energy ray or electron beam having a wavelength of 300 nm or less through a photomask
(3) A pattern forming method comprising the steps of: performing heat treatment as necessary; and developing using a developer.