JP2001118882A - Semiconductor device and packaging structure of the semiconductor device - Google Patents

Semiconductor device and packaging structure of the semiconductor device

Info

Publication number
JP2001118882A
JP2001118882A JP29777599A JP29777599A JP2001118882A JP 2001118882 A JP2001118882 A JP 2001118882A JP 29777599 A JP29777599 A JP 29777599A JP 29777599 A JP29777599 A JP 29777599A JP 2001118882 A JP2001118882 A JP 2001118882A
Authority
JP
Japan
Prior art keywords
semiconductor device
insulating resin
semiconductor element
resin
conductor wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP29777599A
Other languages
Japanese (ja)
Other versions
JP3491576B2 (en
Inventor
Shunichi Yamamoto
俊一 山本
Tetsumasa Maruo
哲正 丸尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP29777599A priority Critical patent/JP3491576B2/en
Publication of JP2001118882A publication Critical patent/JP2001118882A/en
Application granted granted Critical
Publication of JP3491576B2 publication Critical patent/JP3491576B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To prevent a semiconductor element mounted by a TAB system from being broken by thermal stress due to contact of the element with a packaging board, when a semiconductor device itself is mounted on the packaging board along with a heat sink. SOLUTION: An elastic insulating resin 7 is provided on the surface region of a semiconductor element 5. Accordingly, even if impact is applied to the surface of the element 5 when a semiconductor device itself is mounted on a packaging board turning the surface of the element 5 to the side of the packaging board, the impact is absorbed by the resin 7, can be relaxed and reliability can be obtained. In particular, in the case where the device itself is mounted on the packaging board turning the surface of the element 5 to the side of the packaging board and a heat sink is provided on the side of the bottom of the device, the device causes deflection, the surface of the element 5 abuts on the packaging board and the impact can be applied to the surface of the element 5, but the impact can be absorbed by the resin 7, relaxed, and reliability can be obtained.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は樹脂テープ上に導体
配線パターンが形成されたテープキャリアを用いたTA
B(Tape Automated Bonding)
パッケージやCOF(Chip On Film)パッ
ケージに対して、素子からの熱を放散する放熱板を取り
付ける際に有効な半導体装置および半導体装置の実装構
造に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a TA using a tape carrier having a conductor wiring pattern formed on a resin tape.
B (Tape Automated Bonding)
The present invention relates to a semiconductor device and a mounting structure of the semiconductor device which are effective when attaching a heat radiating plate for dissipating heat from an element to a package or a COF (Chip On Film) package.

【0002】[0002]

【従来の技術】現在、IC部品、半導体製品の多くは製
品単価は非常に安く、常に更なるコストダウンを要求さ
れている。そのような中で、TAB等のテープキャリア
を使用したTABパッケージ,COFパッケージはベー
ステープの製造メーカーが少なく、従来の樹脂封止型パ
ッケージと比較すると非常にコストが高い製品となって
いる。また、製品の小型化等に伴い、半導体装置のユー
ザーサイドからは半導体素子に放熱板を取り付けて欲し
いとの声もあり、パッケージをカスタム化する必要があ
る。しかしながらコスト的に見合わない場合が多くあ
る。
2. Description of the Related Art At present, most of IC parts and semiconductor products have very low product unit prices, and further cost reduction is always required. Under such circumstances, TAB packages and COF packages using a tape carrier such as TAB have few manufacturers of base tapes, and are very expensive products as compared with conventional resin-sealed packages. In addition, along with the miniaturization of products, users of semiconductor devices have requested that a heat sink be attached to a semiconductor element, and it is necessary to customize the package. However, there are many cases where the cost is not justified.

【0003】従来の放熱板付のTABパッケージは、T
ABパッケージと放熱板とを取り付けた状態で出荷する
ために、パッケージ専用の放熱板、出荷用トレイ等が必
要であった。そのため、多くの設備の追加、改造による
投資が必要であった。特殊で単価の高い半導体素子を用
いた半導体装置であれば、多額の投資も可能であるが、
TABパッケージで多く使用されている液晶表示用ドラ
イバー等の単価の安い半導体素子では多額の投資はでき
なかった。
A conventional TAB package with a heat sink is
In order to ship with the AB package and the heat sink attached, a heat sink, a shipping tray, and the like dedicated to the package are required. Therefore, investment by adding and remodeling many facilities was necessary. A large amount of investment is possible if the semiconductor device uses a special and high-priced semiconductor element.
Inexpensive semiconductor devices such as liquid crystal display drivers, which are often used in TAB packages, could not invest much.

【0004】図6は従来の半導体装置としてTABパッ
ケージを示す断面図である。
FIG. 6 is a sectional view showing a TAB package as a conventional semiconductor device.

【0005】図6に示すように、従来のTABパッケー
ジは、樹脂テープ1上に導体配線2が形成されたテープ
キャリア3と、テープキャリア3の開口領域において、
そのテープキャリア3の導体配線2とその表面電極(図
示せず)とがバンプ4を介して接続された半導体素子5
と、導体配線2と半導体素子5の表面電極との接続部分
を含む素子表面に設けられた保護用の絶縁性樹脂6とよ
り構成されている。
As shown in FIG. 6, a conventional TAB package includes a tape carrier 3 having a conductor tape 2 formed on a resin tape 1 and an opening region of the tape carrier 3.
A semiconductor element 5 in which the conductor wiring 2 of the tape carrier 3 and its surface electrode (not shown) are connected via bumps 4
And a protective insulating resin 6 provided on the element surface including a connection portion between the conductor wiring 2 and the surface electrode of the semiconductor element 5.

【0006】図6に示すTABパッケージに対して、放
熱板を設ける場合は、半導体素子5の底面に放熱板を接
着し、その状態でユーザー側に出荷するものである。
When a heat radiating plate is provided for the TAB package shown in FIG. 6, the heat radiating plate is bonded to the bottom surface of the semiconductor element 5 and shipped to the user in that state.

【0007】[0007]

【発明が解決しようとする課題】しかしながら前記従来
の半導体装置では、実装基板に半導体装置自体を放熱板
とともに実装した際、熱応力によりTAB実装された半
導体素子が実装基板と接触して破壊する恐れがあった。
また、セット品の小型化等によりパッケージ自体(半導
体装置)の小型化が要望される中、各半導体素子に放熱
板を取り付けた構造では、液晶表示用ドライバー等のよ
うに同じ半導体装置を複数個搭載する場合、スペースを
有効に使用できないという課題を有していた。
However, in the conventional semiconductor device, when the semiconductor device itself is mounted on a mounting board together with a heat sink, there is a possibility that the semiconductor element mounted on the TAB by contact with the mounting board may be broken by thermal stress. was there.
In addition, as the package itself (semiconductor device) is required to be downsized due to downsizing of a set product, etc., a structure in which a heat sink is attached to each semiconductor element requires a plurality of the same semiconductor devices such as a driver for a liquid crystal display. When mounted, there is a problem that the space cannot be used effectively.

【0008】本発明の目的は前記従来の課題を解決すべ
く、TAB等テープキャリアを使用した半導体装置にお
いて、放熱板とともに基板実装した際、半導体装置の信
頼性を確保し、また生産設備の改造も少なく極めて低コ
スト、しかも複数個の半導体素子に同時に放熱板を取り
付けられる半導体装置を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned conventional problems. In a semiconductor device using a tape carrier such as TAB, when mounted on a substrate together with a heat sink, the reliability of the semiconductor device is ensured and the production equipment is modified. It is an object of the present invention to provide a semiconductor device which can reduce the number of semiconductor elements at a very low cost and can simultaneously attach a heat sink to a plurality of semiconductor elements.

【0009】[0009]

【課題を解決するための手段】前記従来の課題を解決す
るために、本発明の半導体装置は、以下のような構成を
有している。
In order to solve the above-mentioned conventional problems, a semiconductor device according to the present invention has the following configuration.

【0010】すなわち、本発明の半導体装置は、樹脂テ
ープ上に導体配線が形成されたテープキャリアと、前記
テープキャリアの導体配線とその表面電極とがバンプを
介して接続された半導体素子と、前記導体配線と半導体
素子の表面電極との接続部分を含む半導体素子の表面に
設けられた保護用の絶縁性樹脂と、前記絶縁性樹脂上に
設けられた弾性絶縁樹脂とよりなる半導体装置である。
That is, a semiconductor device according to the present invention includes a tape carrier having conductive wiring formed on a resin tape, a semiconductor element having conductive wiring of the tape carrier and its surface electrode connected via bumps, A semiconductor device comprising: a protective insulating resin provided on a surface of a semiconductor element including a connection portion between a conductor wiring and a surface electrode of the semiconductor element; and an elastic insulating resin provided on the insulating resin.

【0011】また、絶縁性樹脂はエポキシ樹脂であり、
弾性絶縁樹脂はエラストマ絶縁樹脂である半導体装置で
ある。
Further, the insulating resin is an epoxy resin,
The elastic insulating resin is a semiconductor device that is an elastomer insulating resin.

【0012】また、絶縁性樹脂はエポキシ樹脂であり、
弾性絶縁樹脂はシート状のエラストマ絶縁樹脂である半
導体装置である。
The insulating resin is an epoxy resin,
The elastic insulating resin is a semiconductor device that is a sheet-shaped elastomer insulating resin.

【0013】また本発明の半導体装置は、樹脂テープ上
に導体配線が形成されたテープキャリアと、前記テープ
キャリアの導体配線とその表面電極とがバンプを介して
接続された半導体素子と、前記導体配線と半導体素子の
表面電極との接続部分を含む半導体素子の表面に設けら
れた保護用の弾性絶縁樹脂とよりなる半導体装置であ
る。
The semiconductor device according to the present invention also provides a tape carrier in which conductor wiring is formed on a resin tape, a semiconductor element in which the conductor wiring of the tape carrier and its surface electrode are connected via bumps, A semiconductor device comprising a protective elastic insulating resin provided on a surface of a semiconductor element including a connection portion between a wiring and a surface electrode of the semiconductor element.

【0014】また、弾性絶縁樹脂はエラストマ絶縁樹脂
である半導体装置である。
The elastic insulating resin is a semiconductor device which is an elastomer insulating resin.

【0015】また、弾性絶縁樹脂はシート状のエラスト
マ絶縁樹脂である半導体装置である。
The elastic insulating resin is a semiconductor device which is a sheet-like elastomer insulating resin.

【0016】また本発明の半導体装置は、樹脂テープ上
に導体配線が形成されたテープキャリアと、前記テープ
キャリアの導体配線とその表面電極とがバンプを介して
接続された半導体素子と、前記導体配線と半導体素子の
表面電極との接続部分を含む半導体素子の表面に設けら
れた保護用の絶縁性樹脂と、前記絶縁性樹脂上の前記樹
脂テープを介して設けられた弾性絶縁樹脂とよりなる半
導体装置である。
The semiconductor device according to the present invention also provides a tape carrier in which conductor wiring is formed on a resin tape, a semiconductor element in which the conductor wiring of the tape carrier and its surface electrode are connected via bumps, It comprises an insulating resin for protection provided on the surface of the semiconductor element including a connection portion between the wiring and the surface electrode of the semiconductor element, and an elastic insulating resin provided via the resin tape on the insulating resin. It is a semiconductor device.

【0017】本発明の半導体装置の実装構造は、樹脂テ
ープ上に導体配線が形成されたテープキャリアと、前記
テープキャリアの導体配線とその表面電極とがバンプを
介して接続された半導体素子と、前記導体配線と半導体
素子の表面電極との接続部分を含む半導体素子の表面に
設けられた保護用の絶縁性樹脂と、前記絶縁性樹脂上に
設けられた弾性絶縁樹脂とよりなる半導体装置に対して
放熱部材を設けて実装基板上に実装した半導体装置の実
装構造であって、前記半導体装置の前記半導体素子の底
面に接着剤層を介して放熱部材が設けられ、前記半導体
装置の上面と前記実装基板との間隙には前記半導体装置
に設けた前記弾性絶縁樹脂が密着して介在するととも
に、前記放熱部材が保持部材により前記実装基板に固定
されている半導体装置の実装構造である。
[0017] A mounting structure of a semiconductor device according to the present invention comprises: a tape carrier having conductor wiring formed on a resin tape; a semiconductor element in which the conductor wiring of the tape carrier and its surface electrode are connected via bumps; For a semiconductor device comprising an insulating resin for protection provided on the surface of a semiconductor element including a connection portion between the conductor wiring and a surface electrode of the semiconductor element, and an elastic insulating resin provided on the insulating resin. A mounting structure of a semiconductor device mounted on a mounting board by providing a heat radiating member, wherein a heat radiating member is provided via an adhesive layer on a bottom surface of the semiconductor element of the semiconductor device, and the upper surface of the semiconductor device and The semiconductor device in which the elastic insulating resin provided on the semiconductor device is closely attached to the gap between the mounting board and the heat dissipation member is fixed to the mounting board by a holding member. It is a mounting structure of.

【0018】前記構成の通り、半導体素子の表面領域に
弾性絶縁樹脂を設けているので、半導体装置自体をその
半導体素子の表面を実装基板側に向けて実装した際、熱
応力等の歪みによって、絶縁性樹脂を介して半導体素子
の表面と実装基板とが当接し、半導体素子の表面に衝撃
が印加されても、その衝撃を弾性絶縁樹脂で吸収、緩和
でき、信頼性を得ることができる。
As described above, since the elastic insulating resin is provided on the surface region of the semiconductor element, when the semiconductor device itself is mounted with the surface of the semiconductor element facing the mounting substrate, distortion due to thermal stress or the like causes Even when the surface of the semiconductor element and the mounting substrate are in contact with each other via the insulating resin and an impact is applied to the surface of the semiconductor element, the impact can be absorbed and reduced by the elastic insulating resin, and reliability can be obtained.

【0019】また、半導体装置自体に放熱板の形成およ
び実装基板への固定を想定し、弾性絶縁樹脂を設けてい
るので、高信頼性のもとで半導体装置の基板実装を行う
ことができる。
Further, since the semiconductor device itself is provided with the elastic insulating resin in consideration of the formation of the heat radiating plate and the fixation to the mounting substrate, the semiconductor device can be mounted on the substrate with high reliability.

【0020】すなわち、本発明の半導体装置は、放熱板
を直接パッケージに取り付けるのでは無く、容易に取り
付けできるように材質変更もしくは、追加加工するもの
で半導体装置(パッケージ)の外観がほとんど変わら
ず、既存設備の小変更で対応できるものである。また、
設ける放熱板の形状はユーザーサイド(カスタマー)で
自由に変更できるという利点を有する。
That is, in the semiconductor device of the present invention, the heat sink is not directly attached to the package, but the material is changed or added so that the heat sink can be easily attached. This can be handled by making small changes to existing equipment. Also,
There is an advantage that the shape of the provided heat sink can be freely changed on the user side (customer).

【0021】[0021]

【発明の実施の形態】以下、本発明の半導体装置および
その実装構造の一実施形態について図面を参照しながら
説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the semiconductor device of the present invention and its mounting structure will be described below with reference to the drawings.

【0022】まず本発明の半導体装置についてその一実
施形態を説明する。図1は本実施形態の半導体装置を示
す断面図である。
First, an embodiment of the semiconductor device of the present invention will be described. FIG. 1 is a sectional view showing the semiconductor device of the present embodiment.

【0023】図1に示すように本実施形態の半導体装置
は、TAB方式の半導体装置であって、樹脂テープ1上
に導体配線2が形成されたテープキャリア3と、そのテ
ープキャリア3の開口部において、各導体配線2とその
表面電極とがバンプ4を介して接続された半導体素子5
と、導体配線2と半導体素子5の表面電極との接続部分
を含む半導体素子5の表面に設けられた保護用の絶縁性
樹脂6と、その絶縁性樹脂6上に設けられた弾性絶縁樹
脂7とよりなる半導体装置である。
As shown in FIG. 1, the semiconductor device according to the present embodiment is a TAB type semiconductor device, in which a tape carrier 3 having a conductor wiring 2 formed on a resin tape 1 and an opening of the tape carrier 3 are provided. A semiconductor element 5 in which each conductor wiring 2 and its surface electrode are connected via bumps 4
A protective insulating resin 6 provided on the surface of the semiconductor element 5 including a connection portion between the conductor wiring 2 and the surface electrode of the semiconductor element 5, and an elastic insulating resin 7 provided on the insulating resin 6. And a semiconductor device comprising:

【0024】本実施形態の半導体装置において、絶縁性
樹脂6はエポキシ樹脂であり、弾性絶縁樹脂7はエポキ
シ樹脂よりも高弾性率を有するエラストマ樹脂である。
絶縁性樹脂6の上に形成された2層目の弾性絶縁樹脂7
の厚みとしては、200[μm]〜400[μm]であ
り、好ましくは300[μm]である。そしてこのエラ
ストマ樹脂の形成は、ポッティング法により形成でき
る。本実施形態の半導体装置では、特に半導体装置に放
熱板を設ける目的の場合、製品出荷前の段階で2層目に
弾性絶縁樹脂を設けるだけで、ユーザーサイドでの実施
で効果的である。
In the semiconductor device of this embodiment, the insulating resin 6 is an epoxy resin, and the elastic insulating resin 7 is an elastomer resin having a higher elastic modulus than the epoxy resin.
Second-layer elastic insulating resin 7 formed on insulating resin 6
Has a thickness of 200 [μm] to 400 [μm], and preferably 300 [μm]. This elastomer resin can be formed by a potting method. In the semiconductor device of the present embodiment, in particular, for the purpose of providing a heat sink to the semiconductor device, it is effective to implement on the user side only by providing an elastic insulating resin on the second layer before the product is shipped.

【0025】また、弾性絶縁樹脂7はシート状のエラス
トマ樹脂を用いることにより、2層目の樹脂形成が容易
かつ低コストで行うことができ、効率的である。
Further, by using a sheet-like elastomer resin for the elastic insulating resin 7, the second-layer resin can be formed easily and at low cost, which is efficient.

【0026】本実施形態の半導体装置では、半導体素子
5の表面領域に弾性絶縁樹脂7を設けているので、半導
体装置自体をその半導体素子5の表面を実装基板側に向
けて実装した際、熱応力等の歪みによって半導体素子5
の表面と実装基板とが当接し、半導体素子の表面に衝撃
が印加されても、その衝撃を弾性絶縁樹脂7で吸収、緩
和でき、信頼性を得ることができる。特に半導体装置自
体をその半導体素子5の表面を実装基板側に向けて実装
し、半導体装置の底面側に放熱板を設け、その放熱板と
実装基板とを止め治具で固定した場合には、半導体装置
自体が強固に固定されるとともに、熱応力の逃げ場がな
くなり、半導体装置が撓みを起こし、半導体素子5の表
面と実装基板とが当接し、半導体素子5の表面に衝撃が
印加されても、その衝撃を弾性絶縁樹脂7で吸収、緩和
でき、信頼性を得ることができる。
In the semiconductor device of this embodiment, since the elastic insulating resin 7 is provided in the surface region of the semiconductor element 5, when the semiconductor device itself is mounted with the surface of the semiconductor element 5 facing the mounting substrate side, the heat is not applied. The semiconductor element 5 is distorted by stress or the like.
Even if a shock is applied to the surface of the semiconductor element when the surface of the semiconductor element comes into contact with the mounting substrate, the shock can be absorbed and mitigated by the elastic insulating resin 7, and reliability can be obtained. In particular, when the semiconductor device itself is mounted with the surface of the semiconductor element 5 facing the mounting substrate side, a heat sink is provided on the bottom surface side of the semiconductor device, and the heat sink and the mounting substrate are fixed with a fixing jig, Even if the semiconductor device itself is firmly fixed and there is no escape for thermal stress, the semiconductor device bends, the surface of the semiconductor element 5 comes into contact with the mounting substrate, and even if an impact is applied to the surface of the semiconductor element 5 The impact can be absorbed and reduced by the elastic insulating resin 7, and reliability can be obtained.

【0027】また本実施形態の半導体装置は、半導体素
子5の表面の絶縁性樹脂6を設けず、1層の弾性絶縁樹
脂7で半導体素子5の表面を覆った構造としてもよい。
すなわち、図2に示すように、樹脂テープ1上に導体配
線2が形成されたテープキャリア3と、そのテープキャ
リア3の開口部において各導体配線2とその表面電極と
がバンプ4を介して接続された半導体素子5と、導体配
線2と半導体素子5の表面電極との接続部分を含む半導
体素子5の表面に設けられた保護用の弾性絶縁樹脂7と
よりなる半導体装置である。
The semiconductor device of this embodiment may have a structure in which the insulating resin 6 on the surface of the semiconductor element 5 is not provided and the surface of the semiconductor element 5 is covered with a single layer of elastic insulating resin 7.
That is, as shown in FIG. 2, the tape carrier 3 having the conductor wiring 2 formed on the resin tape 1 and the conductor wiring 2 and its surface electrode are connected via the bump 4 at the opening of the tape carrier 3. And a protective elastic insulating resin 7 provided on the surface of the semiconductor element 5 including the connection portion between the conductor wiring 2 and the surface electrode of the semiconductor element 5.

【0028】この構造においても、半導体装置自体をそ
の半導体素子5の表面を実装基板側に向けて実装し、半
導体装置の底面側に放熱板を設け、その放熱板と実装基
板とを止め治具で固定した場合には、半導体装置自体が
強固に固定されるとともに、熱応力の逃げ場がなくな
り、半導体装置が撓みを起こし、半導体素子5の表面と
実装基板とが当接し、半導体素子5の表面に衝撃が印加
されても、その衝撃を1層の弾性絶縁樹脂7で吸収、緩
和でき、信頼性を得ることができる。
Also in this structure, the semiconductor device itself is mounted with the surface of the semiconductor element 5 facing the mounting substrate side, a heat sink is provided on the bottom surface side of the semiconductor device, and a jig for fixing the heat sink and the mounting substrate is provided. In this case, the semiconductor device itself is firmly fixed, there is no escape for thermal stress, the semiconductor device bends, and the surface of the semiconductor element 5 and the mounting substrate come into contact with each other. Can be absorbed and mitigated by one layer of the elastic insulating resin 7, and reliability can be obtained.

【0029】次に本発明の半導体装置の別の実施形態に
ついて説明する。図3は本実施形態の半導体装置を示す
断面図であり、COF方式の半導体装置である。
Next, another embodiment of the semiconductor device of the present invention will be described. FIG. 3 is a sectional view showing the semiconductor device of the present embodiment, which is a COF type semiconductor device.

【0030】本実施形態の半導体装置は、開口部を有さ
ない樹脂テープ1上に導体配線2が形成されたテープキ
ャリア3と、そのテープキャリア3の各導体配線2とそ
の表面電極とがバンプ4を介して接続された半導体素子
5と、導体配線2と半導体素子5の表面電極との接続部
分を含む半導体素子5の表面に設けられた保護用の絶縁
性樹脂6と、その絶縁性樹脂6上に樹脂テープ1を介し
て設けられた弾性絶縁樹脂7とよりなる半導体装置であ
る。
The semiconductor device of this embodiment has a tape carrier 3 in which conductor wiring 2 is formed on a resin tape 1 having no opening, and each conductor wiring 2 of the tape carrier 3 and its surface electrode are bumped. 4, a protective insulating resin 6 provided on the surface of the semiconductor element 5 including a connection portion between the conductor wiring 2 and the surface electrode of the semiconductor element 5, and the insulating resin. 6 is a semiconductor device comprising an elastic insulating resin 7 provided on a resin tape 1 via a resin tape 1.

【0031】本実施形態の半導体装置において、絶縁性
樹脂6はエポキシ樹脂であり、弾性絶縁樹脂7はエポキ
シ樹脂よりも高弾性率を有するエラストマ樹脂である。
また樹脂の厚みは前記同様である。
In the semiconductor device of this embodiment, the insulating resin 6 is an epoxy resin, and the elastic insulating resin 7 is an elastomer resin having a higher elastic modulus than the epoxy resin.
The thickness of the resin is the same as described above.

【0032】本実施形態の半導体装置は、COF方式の
半導体装置に対して、弾性絶縁樹脂7の形成を適用した
ものであるが、この半導体装置を実装基板に実装した
際、または放熱板とともに実装した際、半導体装置自体
が撓みを起こしたり、半導体装置と実装基板とが当接
し、半導体装置に衝撃が印加されても、その衝撃を弾性
絶縁樹脂7で吸収、緩和でき、信頼性を得ることができ
る。
The semiconductor device of the present embodiment is obtained by applying the elastic insulating resin 7 to the COF type semiconductor device. When the semiconductor device is mounted on a mounting board or mounted together with a heat sink. In this case, even if the semiconductor device itself bends or the semiconductor device comes into contact with the mounting substrate and an impact is applied to the semiconductor device, the impact can be absorbed and reduced by the elastic insulating resin 7 to obtain reliability. Can be.

【0033】次に本発明の半導体装置の実装構造につい
て説明する。
Next, the mounting structure of the semiconductor device of the present invention will be described.

【0034】図4は本実施形態の半導体装置の実装構造
を示す断面図であり、図1に示した半導体装置に放熱部
材を設けて実装基板に実装した構造を示す。
FIG. 4 is a sectional view showing a mounting structure of the semiconductor device of the present embodiment, and shows a structure in which a heat radiation member is provided on the semiconductor device shown in FIG. 1 and mounted on a mounting board.

【0035】図4に示すように、本実施形態の半導体装
置の実装構造は、樹脂テープ1上に導体配線2が形成さ
れたテープキャリア3と、そのテープキャリア3の開口
部において各導体配線2とその表面電極とがバンプ4を
介して接続された半導体素子5と、導体配線2と半導体
素子5の表面電極との接続部分を含む半導体素子5の表
面に設けられた保護用の絶縁性樹脂6と、その絶縁性樹
脂6上に設けられた弾性絶縁樹脂7とよりなる半導体装
置に対して放熱部材として放熱板8を設けて実装基板9
上に実装した半導体装置の実装構造であって、半導体装
置の半導体素子5の底面に接着剤層10を介して放熱板
8が設けられ、半導体装置の上面と実装基板9との間隙
には半導体装置に設けた弾性絶縁樹脂7が密着して介在
するとともに、放熱板8が止め治具11により実装基板
9に固定されている半導体装置の実装構造である。
As shown in FIG. 4, the mounting structure of the semiconductor device according to the present embodiment includes a tape carrier 3 in which conductor wiring 2 is formed on a resin tape 1, and a conductor wiring 2 in an opening of the tape carrier 3. Element 5 whose surface electrode is connected via bumps 4 and a protective insulating resin provided on the surface of semiconductor element 5 including the connection portion between conductor wiring 2 and the surface electrode of semiconductor element 5. A heat sink 8 is provided as a heat radiating member for a semiconductor device comprising an elastic insulating resin 7 provided on the insulating resin 6 and a mounting board 9.
A mounting structure of a semiconductor device mounted thereon, wherein a heat sink 8 is provided on a bottom surface of a semiconductor element 5 of the semiconductor device via an adhesive layer 10, and a gap between an upper surface of the semiconductor device and a mounting substrate 9 is provided. This is a semiconductor device mounting structure in which an elastic insulating resin 7 provided in the device is closely interposed and a heat radiating plate 8 is fixed to a mounting substrate 9 by a fixing jig 11.

【0036】本実施形態の半導体装置の実装構造では、
半導体装置自体をその半導体素子5の表面を実装基板側
に向けて実装し、半導体装置の底面側に放熱板8を設
け、その放熱板8と実装基板9とを止め治具11で固定
した場合には、半導体装置自体が強固に固定されるとと
もに、熱応力の逃げ場がなくなり、半導体装置が撓みを
起こし、絶縁性樹脂6を介して半導体素子5の表面と実
装基板9とが当接し、半導体素子5の表面に衝撃が印加
されても、その衝撃を介在した弾性絶縁樹脂7で吸収、
緩和でき、信頼性を得ることができる構造である。
In the mounting structure of the semiconductor device of this embodiment,
When the semiconductor device itself is mounted with the surface of the semiconductor element 5 facing the mounting substrate side, a heat sink 8 is provided on the bottom surface side of the semiconductor device, and the heat sink 8 and the mounting substrate 9 are fixed by a fixing jig 11. In addition, the semiconductor device itself is firmly fixed, there is no escape of thermal stress, the semiconductor device bends, and the surface of the semiconductor element 5 and the mounting substrate 9 come into contact via the insulating resin 6, Even if a shock is applied to the surface of the element 5, the shock is absorbed by the elastic insulating resin 7 interposed therebetween.
It is a structure that can be relaxed and reliability can be obtained.

【0037】なお、本実施形態では図1に示したTAB
方式の半導体装置の実装構造を示したが、図1に示した
半導体装置以外、図2,図3に示した形態の半導体装置
にも同様に適用できるものである。
In this embodiment, the TAB shown in FIG.
Although the mounting structure of the semiconductor device of the system is shown, it can be similarly applied to the semiconductor device of the embodiment shown in FIGS. 2 and 3 other than the semiconductor device shown in FIG.

【0038】通常、低コストでTAB方式、またはCO
F方式の半導体装置に放熱板を設けて実装するのは、ユ
ーザーサイドであり、本実施形態で示したように、半導
体装置自体に放熱板の形成および実装基板への固定を想
定し、弾性絶縁樹脂7を設けているので、高信頼性のも
とで半導体装置の基板実装を行うことができる。
Usually, a low cost TAB method or CO
It is up to the user to provide a heat sink on the F-type semiconductor device and mount it on the user side. As shown in this embodiment, it is assumed that the heat sink is formed on the semiconductor device itself and fixed to the mounting board. Since the resin 7 is provided, the semiconductor device can be mounted on the substrate with high reliability.

【0039】また、個々の半導体装置に対して放熱板を
設ける構造ではなく、後工程として放熱板を設けて、基
板実装することができるので、図5の実装状態を示す平
面図に示すように、複数個の半導体装置12を基板に実
装した後、包括した1枚の放熱板13を複数個の半導体
装置12に接して設けることにより、低コストととも
に、実装面積の省スペース化を実現できるものである。
Further, instead of a structure in which a heat radiating plate is provided for each semiconductor device, a heat radiating plate can be provided as a post-process and mounted on a substrate, and as shown in a plan view of FIG. By mounting a plurality of semiconductor devices 12 on a substrate and then providing a single radiating plate 13 in contact with the plurality of semiconductor devices 12, a low cost and space-saving mounting area can be realized. It is.

【0040】[0040]

【発明の効果】以上、本発明の半導体装置は、半導体素
子の表面領域に弾性絶縁樹脂を設けているので、半導体
装置自体をその半導体素子の表面を実装基板側に向けて
実装した際、熱応力等の歪みによって、絶縁性樹脂を介
して半導体素子の表面と実装基板とが当接し、半導体素
子の表面に衝撃が印加されても、その衝撃を弾性絶縁樹
脂で吸収、緩和でき、信頼性を得ることができる。ま
た、半導体装置自体に放熱板の形成および実装基板への
固定を想定し、弾性絶縁樹脂を設けているので、高信頼
性のもとで半導体装置の基板実装を行うことができる。
As described above, in the semiconductor device of the present invention, the elastic insulating resin is provided in the surface region of the semiconductor element. Therefore, when the semiconductor device itself is mounted with the surface of the semiconductor element facing the mounting substrate, the heat is not generated. Even if the surface of the semiconductor element and the mounting substrate come into contact with each other via the insulating resin due to stress or the like and an impact is applied to the surface of the semiconductor element, the impact can be absorbed and moderated by the elastic insulating resin, and reliability can be improved. Can be obtained. In addition, since the semiconductor device itself is provided with the elastic insulating resin in consideration of the formation of the heat sink and the fixation to the mounting substrate, the semiconductor device can be mounted on the substrate with high reliability.

【0041】さらに放熱板を直接パッケージに取り付け
るのでは無く、容易に取り付けできるように材質変更も
しくは、追加加工するもので半導体装置(パッケージ)
の外観がほとんど変わらず、既存設備の小変更で対応で
きるものである。また、設ける放熱板の形状はユーザー
サイド(カスタマー)で自由に変更できるという利点を
有する。
Further, instead of directly attaching the heat sink to the package, the material is changed or added so that the heat sink can be easily attached to the semiconductor device (package).
Has almost no change in appearance and can be accommodated by small changes to existing equipment. Further, there is an advantage that the shape of the provided heat radiating plate can be freely changed on the user side (customer).

【0042】また本発明の半導体装置の実装構造では、
半導体装置の底面側に放熱板を設け、その放熱板と実装
基板とを止め治具で固定した場合には、半導体装置自体
が強固に固定されるとともに、熱応力の逃げ場がなくな
り、半導体装置が撓みを起こし、絶縁性樹脂を介して半
導体素子の表面と実装基板とが当接し、半導体素子の表
面に衝撃が印加されても、その衝撃を介在した弾性絶縁
樹脂で吸収、緩和でき、信頼性を得ることができる構造
である。
In the semiconductor device mounting structure of the present invention,
When a heat sink is provided on the bottom side of the semiconductor device and the heat sink and the mounting board are fixed with a fixing jig, the semiconductor device itself is firmly fixed, and there is no place for thermal stress to escape. Deflection occurs, and the surface of the semiconductor element and the mounting board come into contact with each other via the insulating resin, and even if a shock is applied to the surface of the semiconductor element, the shock can be absorbed and mitigated by the elastic insulating resin that intervenes. Is a structure that can be obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施形態にかかる半導体装置を示す
断面図
FIG. 1 is a sectional view showing a semiconductor device according to an embodiment of the present invention;

【図2】本発明の一実施形態にかかる半導体装置を示す
断面図
FIG. 2 is a sectional view showing a semiconductor device according to one embodiment of the present invention;

【図3】本発明の一実施形態にかかる半導体装置を示す
断面図
FIG. 3 is a sectional view showing a semiconductor device according to one embodiment of the present invention;

【図4】本発明の一実施形態にかかる半導体装置の実装
構造を示す断面図
FIG. 4 is a sectional view showing a mounting structure of a semiconductor device according to an embodiment of the present invention;

【図5】本発明の一実施形態にかかる半導体装置の実装
状態を示す平面図
FIG. 5 is a plan view showing a mounting state of the semiconductor device according to the embodiment of the present invention;

【図6】従来の半導体装置を示す断面図FIG. 6 is a sectional view showing a conventional semiconductor device.

【符号の説明】[Explanation of symbols]

1 樹脂テープ 2 導体配線 3 テープキャリア 4 バンプ 5 半導体素子 6 絶縁性樹脂 7 弾性絶縁樹脂 8 放熱板 9 実装基板 10 接着剤層 11 止め治具 12 半導体装置 13 放熱板 DESCRIPTION OF SYMBOLS 1 Resin tape 2 Conductor wiring 3 Tape carrier 4 Bump 5 Semiconductor element 6 Insulating resin 7 Elastic insulating resin 8 Heat sink 9 Mounting board 10 Adhesive layer 11 Stopper 12 Semiconductor device 13 Heat sink

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 4M109 AA01 AA02 BA05 CA04 DB15 EA01 EE02 5F036 AA01 BB01 BC05 BE01 BE09 5F044 KK03 NN01 RR17 RR18  ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4M109 AA01 AA02 BA05 CA04 DB15 EA01 EE02 5F036 AA01 BB01 BC05 BE01 BE09 5F044 KK03 NN01 RR17 RR18

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】 樹脂テープ上に導体配線が形成されたテ
ープキャリアと、前記テープキャリアの導体配線とその
表面電極とがバンプを介して接続された半導体素子と、
前記導体配線と半導体素子の表面電極との接続部分を含
む半導体素子の表面に設けられた保護用の絶縁性樹脂
と、前記絶縁性樹脂上に設けられた弾性絶縁樹脂とより
なることを特徴とする半導体装置。
A tape carrier having conductor wiring formed on a resin tape; a semiconductor element having conductor wiring of the tape carrier and a surface electrode connected via bumps;
A protective insulating resin provided on the surface of a semiconductor element including a connection portion between the conductor wiring and a surface electrode of the semiconductor element, and an elastic insulating resin provided on the insulating resin, Semiconductor device.
【請求項2】 絶縁性樹脂はエポキシ樹脂であり、弾性
絶縁樹脂はエラストマ絶縁樹脂であることを特徴とする
請求項1に記載の半導体装置。
2. The semiconductor device according to claim 1, wherein the insulating resin is an epoxy resin, and the elastic insulating resin is an elastomer insulating resin.
【請求項3】 絶縁性樹脂はエポキシ樹脂であり、弾性
絶縁樹脂はシート状のエラストマ絶縁樹脂であることを
特徴とする請求項1に記載の半導体装置。
3. The semiconductor device according to claim 1, wherein the insulating resin is an epoxy resin, and the elastic insulating resin is a sheet-like elastomer insulating resin.
【請求項4】 樹脂テープ上に導体配線が形成されたテ
ープキャリアと、前記テープキャリアの導体配線とその
表面電極とがバンプを介して接続された半導体素子と、
前記導体配線と半導体素子の表面電極との接続部分を含
む半導体素子の表面に設けられた保護用の弾性絶縁樹脂
とよりなることを特徴とする半導体装置。
4. A tape carrier having conductor wiring formed on a resin tape, a semiconductor element in which the conductor wiring of the tape carrier and its surface electrode are connected via bumps,
A semiconductor device comprising a protective elastic insulating resin provided on a surface of a semiconductor element including a connection portion between the conductor wiring and a surface electrode of the semiconductor element.
【請求項5】 弾性絶縁樹脂はエラストマ絶縁樹脂であ
ることを特徴とする請求項4に記載の半導体装置。
5. The semiconductor device according to claim 4, wherein the elastic insulating resin is an elastomer insulating resin.
【請求項6】 弾性絶縁樹脂はシート状のエラストマ絶
縁樹脂であることを特徴とする請求項4に記載の半導体
装置。
6. The semiconductor device according to claim 4, wherein the elastic insulating resin is a sheet-like elastomer insulating resin.
【請求項7】 樹脂テープ上に導体配線が形成されたテ
ープキャリアと、前記テープキャリアの導体配線とその
表面電極とがバンプを介して接続された半導体素子と、
前記導体配線と半導体素子の表面電極との接続部分を含
む半導体素子の表面に設けられた保護用の絶縁性樹脂
と、前記絶縁性樹脂上の前記樹脂テープを介して設けら
れた弾性絶縁樹脂とよりなることを特徴とする半導体装
置。
7. A tape carrier in which conductor wiring is formed on a resin tape, a semiconductor element in which the conductor wiring of the tape carrier and its surface electrode are connected via bumps,
A protective insulating resin provided on the surface of the semiconductor element including a connection portion between the conductor wiring and a surface electrode of the semiconductor element; and an elastic insulating resin provided via the resin tape on the insulating resin. A semiconductor device comprising:
【請求項8】 樹脂テープ上に導体配線が形成されたテ
ープキャリアと、前記テープキャリアの導体配線とその
表面電極とがバンプを介して接続された半導体素子と、
前記導体配線と半導体素子の表面電極との接続部分を含
む半導体素子の表面に設けられた保護用の絶縁性樹脂
と、前記絶縁性樹脂上に設けられた弾性絶縁樹脂とより
なる半導体装置に対して放熱部材を設けて実装基板上に
実装した半導体装置の実装構造であって、前記半導体装
置の前記半導体素子の底面に接着剤層を介して放熱部材
が設けられ、前記半導体装置の上面と前記実装基板との
間隙には前記半導体装置に設けた前記弾性絶縁樹脂が密
着して介在するとともに、前記放熱部材が保持部材によ
り前記実装基板に固定されていることを特徴とする半導
体装置の実装構造。
8. A tape carrier having conductor wiring formed on a resin tape, a semiconductor element in which the conductor wiring of the tape carrier and its surface electrode are connected via bumps,
For a semiconductor device comprising an insulating resin for protection provided on the surface of a semiconductor element including a connection portion between the conductor wiring and a surface electrode of the semiconductor element, and an elastic insulating resin provided on the insulating resin. A mounting structure of a semiconductor device mounted on a mounting board by providing a heat radiating member, wherein a heat radiating member is provided via an adhesive layer on a bottom surface of the semiconductor element of the semiconductor device, and the upper surface of the semiconductor device and The semiconductor device mounting structure, wherein the elastic insulating resin provided on the semiconductor device is closely interposed in a gap with the mounting substrate, and the heat radiation member is fixed to the mounting substrate by a holding member. .
JP29777599A 1999-10-20 1999-10-20 Semiconductor device and mounting structure of semiconductor device Expired - Fee Related JP3491576B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29777599A JP3491576B2 (en) 1999-10-20 1999-10-20 Semiconductor device and mounting structure of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29777599A JP3491576B2 (en) 1999-10-20 1999-10-20 Semiconductor device and mounting structure of semiconductor device

Publications (2)

Publication Number Publication Date
JP2001118882A true JP2001118882A (en) 2001-04-27
JP3491576B2 JP3491576B2 (en) 2004-01-26

Family

ID=17851029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29777599A Expired - Fee Related JP3491576B2 (en) 1999-10-20 1999-10-20 Semiconductor device and mounting structure of semiconductor device

Country Status (1)

Country Link
JP (1) JP3491576B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100771874B1 (en) 2006-07-06 2007-11-01 삼성전자주식회사 A semiconduct tape automated bonding package and method of manufacturing the same
JP2009260359A (en) * 2008-04-17 2009-11-05 Samsung Electronics Co Ltd Cof type semiconductor package including heat dissipating member
JP2014220319A (en) * 2013-05-07 2014-11-20 株式会社村田製作所 Mounting structure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100771874B1 (en) 2006-07-06 2007-11-01 삼성전자주식회사 A semiconduct tape automated bonding package and method of manufacturing the same
JP2009260359A (en) * 2008-04-17 2009-11-05 Samsung Electronics Co Ltd Cof type semiconductor package including heat dissipating member
JP2014220319A (en) * 2013-05-07 2014-11-20 株式会社村田製作所 Mounting structure

Also Published As

Publication number Publication date
JP3491576B2 (en) 2004-01-26

Similar Documents

Publication Publication Date Title
US6399418B1 (en) Method for forming a reduced thickness packaged electronic device
US6586824B1 (en) Reduced thickness packaged electronic device
US7956455B2 (en) RF power transistor package
US20110143625A1 (en) Tape for heat dissipating member, chip on film type semiconductor package including heat dissipating member, and electronic apparatus including the same
JP5207477B2 (en) COF type semiconductor package with heat dissipation member
JPH11135713A (en) Semiconductor module
JP2002373969A (en) Semiconductor device and method of manufacturing semiconductor device
JP2000299416A (en) Driver module structure
US6049094A (en) Low stress package assembly for silicon-backed light valves
KR930024140A (en) Semiconductor device and manufacturing method
KR20140125673A (en) Cof package and display device including the same
JP3491576B2 (en) Semiconductor device and mounting structure of semiconductor device
US5093713A (en) Semiconductor device package
KR20100029629A (en) Tape package having adhesive layer for heat sink and display device with the same
JPH11176886A (en) Tab tape with warp preventive film
JP2817712B2 (en) Semiconductor device and mounting method thereof
TW456005B (en) Integrated circuit package with stacked dies
JP2745786B2 (en) TAB semiconductor device
JP2003085722A (en) Chip-on suspension type magnetic head and its manufacturing method
JP2000031320A (en) Printed wiring unit and electronic equipment incorporating the same
JPH0831986A (en) Semiconductor device having heatsink
JPH08213424A (en) Semiconductor device
JPH05198735A (en) Multichip module
JP3092586B2 (en) Electrical device, display panel, mounting method of semiconductor chip, and mounting structure of semiconductor chip
TWI259305B (en) Liquid crystal display and method for manufacturing the same

Legal Events

Date Code Title Description
FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20071114

Year of fee payment: 4

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081114

Year of fee payment: 5

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091114

Year of fee payment: 6

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091114

Year of fee payment: 6

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101114

Year of fee payment: 7

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111114

Year of fee payment: 8

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121114

Year of fee payment: 9

LAPS Cancellation because of no payment of annual fees