JP2001118796A - Reaction tube for semiconductor wafer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem that temperature cannot be accurately measured since the radiation rate of a wafer is changed according to the temperature and the type of films by an infrared radiation thermometer, a thermocouple being provided on the surface of a dummy wafer falls off, and a device for maintaining the airtightness of feedthrough or the like is required although the infrared radiation thermometer is used for measuring the temperature of a semiconductor wafer, or the dummy wafer where the thermocouple is provided on the surface is used for setting the temperature conditions of film formation in a conventional reaction tube for semiconductor wafers. SOLUTION: In a reaction tube for semiconductor wafers, a plurality of cylindrical projections for supporting wafers inside a flat tube body with spaces for accommodating semiconductor wafers inside, and an insertion part for inserting a temperature sensor from the outside is formed inside the plurality of projections. The cylindrical projections are formed in an inverted cup shape for blocking a through hole being connected to the space being provided on a bottom wall of the tube body, an internal thread is formed on the inner- periphery surface of the through hole, and a temperature sensor is screwed to the internal thread part.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reaction tube for a semiconductor wafer, particularly to a single-wafer type apparatus for cutting a large number of semiconductor chips from one semiconductor wafer. It relates to a reaction tube.

[0002]

2. Description of the Related Art When a semiconductor wafer is formed in a reaction tube, the temperature of the semiconductor wafer and the quality of the film are closely related, so that the temperature of the semiconductor wafer must be precisely controlled.

[0003] Therefore, conventionally, the temperature of a wafer during film formation is measured by an infrared radiation thermometer, or the temperature condition for film formation is set using a dummy wafer having a thermocouple provided on the surface in advance, and the temperature of the semiconductor wafer is set. Temperature was controlled.

[0004]

However, in the method using an infrared radiation thermometer, the temperature of the semiconductor wafer cannot be accurately measured because the heat radiation rate of the semiconductor wafer changes depending on the temperature and the type of film.

In the method using a dummy wafer,
A thermocouple is easily dropped because the thermocouple is attached to the surface of the thin wafer, and a separate device such as a feedthrough is required to keep the airtight such as a feed-through to take out the wiring from the thermocouple to the outside from the inside of the reaction tube. There was a disadvantage.

The present invention has been made to eliminate the above disadvantages.

[0007]

A reaction tube for a semiconductor wafer according to the present invention comprises a flat tube body having a space for accommodating a semiconductor wafer therein, and a plurality of tubes for supporting the wafer provided inside the tube body. And a temperature sensor insertion portion formed inside the plurality of protrusions from the outside.

The cylindrical projection has an inverted cup shape which closes a through hole communicating with the space provided in the bottom wall of the tube body, and a female screw is formed on an inner peripheral surface of the through hole. A temperature sensor is screwed into the female screw portion.

[0009]

Embodiments of the present invention will be described below with reference to the drawings.

The reaction tube for a semiconductor wafer of the present invention is shown in FIGS.
As shown in FIG. 5, a flat tube body 3 made of high-purity quartz having a space 2 for accommodating, for example, a disk-shaped wafer 1 therein, and a process gas introduced at one end 3a of the tube body 3 For example, three through-holes 5 provided in a portion of the bottom wall 3b of the tube body 3 that supports the wafer 1 for communicating between the outside of the tube body 3 and the space 2; Three inverted cup-shaped projections 6 extending into the space 2 welded to the bottom wall 3b of the tube main body 3 so as to cover the through holes 5, and formed on the lower surface of the bottom wall 3b corresponding to the through holes 5. A female thread portion 3c, a flange 8a and a cylindrical portion 8b formed on the outer periphery of a male screw portion 7 to be screwed to the female screw portion 3c, and axially extending grooves 8c formed on both side surfaces of the cylindrical portion; The flange 8 is connected to the groove 8c. The driver slot 8e which the lower surface of the hole 8d and the flange 8a penetrating vertically is formed in the horizontal direction
And a quartz cylindrical sensor fixing tool 9 that can be advanced and retracted into the projection 6, and the hole 8 of the fixing tool 9.
d and a thermocouple 11 whose measuring portion 10 is in contact with the ceiling 6a of the protrusion 6 and a lead wire 12 for connecting the thermocouple 11 to a thermometer (not shown). The insulating quartz beads 13 of the lead wire 12
And

Since the reaction tube for a semiconductor wafer of the present invention has the above-described structure, the projection 6, the sensor fixture 9 and the thermocouple 11 are assembled as shown in FIG. The wafer 1 is placed on the protrusion 6 in the main body 3, inserted into the heating furnace 14 to form the film on the wafer 1, and the temperature of the wafer 1 during the process is adjusted to the temperature of the protrusion 6.
It measures with the thermocouple 11 inside.

Reference numeral 15 denotes a heated space in the heating furnace 14,
Reference numeral 16 denotes two heat equalizing plates arranged above and below the heated space 15 at a predetermined distance from each other and opposed to each other, and 17 denotes a heater unit.

[0013]

As described above, according to the reaction tube for a semiconductor wafer of the present invention, since the thermocouple is not directly attached to the wafer, the sensor does not fall off during use, and the thermocouple 11 is connected to the tube main body. Since there is no need for a device such as a feed-through since it is located outside the device 3, there is a great advantage that the temperature during film formation of the semiconductor wafer can be accurately measured and controlled.

[Brief description of the drawings]

FIG. 1 is a plan view of a reaction tube for a semiconductor wafer of the present invention.

FIG. 2 is a vertical sectional side view of a reaction tube for a semiconductor wafer of the present invention.

FIG. 3 is an explanatory vertical sectional side view showing a separated state of a projection and a sensor fixture in a reaction tube for a semiconductor wafer of the present invention.

FIG. 4 is a perspective view of the sensor fixture shown in FIG. 3;

FIG. 5 is an explanatory longitudinal sectional front view showing a coupling state of a protrusion, a sensor fixture, and a thermocouple shown in FIG. 3;

FIG. 6 is a vertical sectional side view for explaining a use state of the semiconductor wafer reaction tube of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Wafer 2 Space 3 Tube main body 3a One end 3b Bottom wall 3c Female screw part 4 Tube 5 Through hole 6 Projection 6a Ceiling 7 Male screw part 8a Flange 8b Cylindrical part 8c Groove 8d hole 8e Driver groove 9 Fixture 10 Measurement part 11 Thermocouple 12 Lead wire 13 Quartz beads 14 Heating furnace 15 Heated space 16 Heat equalizing plate 17 Heater unit

[Procedure amendment]

[Submission Date] June 19, 2000 (2006.1.
9)

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Claims

[Correction method] Change

[Correction contents]

[Claims]

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0007

[Correction method] Change

[Correction contents]

[0007]

A reaction tube for a semiconductor wafer according to the present invention comprises a flat tube body having a space for accommodating a semiconductor wafer therein, and a plurality of tubes for supporting the wafer provided inside the tube body. cylindrical projection with Ri more <br/> formed, the cylindrical protrusion is provided on the bottom wall of the tube body
With an inverted cup that closes the through hole communicating with the space
A female screw is formed on the inner peripheral surface of the through hole.
A temperature sensor is screwed into the female screw portion from outside .

[Procedure amendment 3]

[Document name to be amended] Statement

[Correction target item name] 0008

[Correction method] Deleted

Claims (2)

[Claims] A flat tube body having a space for accommodating a semiconductor wafer therein; a plurality of cylindrical projections provided inside the tube body for supporting the wafer;
A reaction tube for a semiconductor wafer, comprising an external temperature sensor insertion portion formed inside the plurality of projections. 2. The tubular projection has an inverted cup shape which closes a through hole communicating with the space provided on a bottom wall of the tube main body, and a female screw is formed on an inner peripheral surface of the through hole. The reaction tube for a semiconductor wafer according to claim 1, wherein a temperature sensor is screwed into the female screw portion.