JP2001117234A5

JP2001117234A5 -

Info

Publication number: JP2001117234A5
Application number: JP1999298782A
Authority: JP
Filing date: 1999-10-20
Publication date: 2005-07-14
Anticipated expiration: 2019-10-20

Claims

(A) a compound that generates an acid upon irradiation with an actinic ray or radiation,
(B) having at least one selected from the group of repeating units represented by the following general formula (Ia) and general formula (Ib) and a repeating unit represented by the following general formula (II), and an acid A resin having a group (acid-decomposable group) that is decomposed by the action of the above, wherein at least two resins having different contents (mol%) of acid-decomposable group-containing repeating units in all repeating units,
A positive photoresist composition for deep ultraviolet exposure, comprising:

In formula (Ia):
R ₁ and R ₂ are each independently a hydrogen atom, a cyano group, a hydroxyl group, —COOH, —COOR ₅ , —CO—NH—R ₆ , —CO—NH—SO ₂ —R ₆ , or substituted. Represents an alkyl group, an alkoxy group, a cyclic hydrocarbon group, or the following -Y group.
X represents an oxygen atom, a sulfur atom, -NH -, - NHSO ₂ - or an -NHSO ₂ NH-. Here, R ₅ represents an alkyl group, a cyclic hydrocarbon group, or the following —Y group, which may have a substituent. R ₆ represents an alkyl group or a cyclic hydrocarbon group which may have a substituent.
A represents a single bond or a divalent linking group.
The -Y group;

(In the -Y group, R _{21 to} R ₃₀ each independently represents a hydrogen atom or an alkyl group which may have a substituent. A and b represent 1 or 2)
In formula (Ib):
Z ₂ represents —O— or —N (R ₃ ) —. Here, R ₃ represents a hydrogen atom, a hydroxyl group, or —OSO ₂ —R ₄ . R ₄ represents an alkyl group, a haloalkyl group, a cycloalkyl group or a camphor residue.
In formula (II):
R ₁₁ and R ₁₂ each independently represents a hydrogen atom, a cyano group, a halogen atom, or an alkyl group which may have a substituent.
Z represents an atomic group for forming an alicyclic structure which contains two bonded carbon atoms (C—C) and may have a substituent.

The said resin (B) contains 2 types of resin whose difference of the content rate of the acid-decomposable group containing repeating unit in all the repeating units is 5-30 mol%, The Claim 1 characterized by the above-mentioned. A positive photoresist composition for far ultraviolet exposure.

Z in the general formula (II) represents an atomic group for forming a bridged alicyclic structure which contains two bonded carbon atoms (C—C) and may have a substituent. The positive photoresist composition for deep ultraviolet exposure according to claim 1 or 2.

Formula (II) is represented by the following formula (II-A) or general formula (II-B) far ultraviolet exposure for a positive photoresist composition according to claim 1 or 2, characterized in that a.

In formulas (II-A) and (II-B):
R _{13 to} R ₁₆ are each independently a hydrogen atom, a halogen atom, a cyano group, —COOH, —COOR ₅ (R ₅ is as defined above), a group that decomposes by the action of an acid, —C (= O) —X—A—R ₁₇ , or an alkyl group or cyclic hydrocarbon group which may have a substituent. In addition, at least two of R _{13 to} R ₁₆ may be bonded to form a ring. n represents 0 or 1. Here, X and A are as defined above. R ₁₇ represents —COOH, —COOR ₅ , —CN, a hydroxyl group, an optionally substituted alkoxy group, —CO—NH—R ₆ , —CO—NH—SO ₂ —R ₆ (R ₅ , R ₆ is the same as defined above) or the —Y group.

The positive photoresist composition for far ultraviolet exposure according to any one of claims 1 to 4, further comprising a nitrogen-containing basic compound.

The nitrogen-containing basic compound is 1,5-diazabicyclo [4.3.0] -5-nonene, 1,8-diazabicyclo [5.4.0] -7-undecene, 1,4-diazabicyclo [2.2. .2] Octane, 4-dimethylaminopyridine, hexamethylenetetramine, 4,4-dimethylimidazoline, pyrroles, pyrazoles, imidazoles, pyridazines, pyrimidines, tertiary morpholines, and hindered amines having a hindered piperidine skeleton 6. The positive photoresist composition for deep ultraviolet exposure according to claim 5, wherein the positive photoresist composition is at least one compound selected from the group of compounds.

A pattern forming method comprising: forming a positive photoresist film from the positive photoresist composition for deep ultraviolet exposure according to claim 1; and exposing and developing the positive photoresist film. .