JP2001111378A - Surface acoustic wave element and surface acoustic wave device - Google Patents

Surface acoustic wave element and surface acoustic wave device

Info

Publication number
JP2001111378A
JP2001111378A JP29163299A JP29163299A JP2001111378A JP 2001111378 A JP2001111378 A JP 2001111378A JP 29163299 A JP29163299 A JP 29163299A JP 29163299 A JP29163299 A JP 29163299A JP 2001111378 A JP2001111378 A JP 2001111378A
Authority
JP
Japan
Prior art keywords
acoustic wave
piezoelectric substrate
surface acoustic
expansion
piezoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29163299A
Other languages
Japanese (ja)
Inventor
Kunio Hamaguchi
邦夫 濱口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Communication Equipment Co Ltd
Original Assignee
Toyo Communication Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Communication Equipment Co Ltd filed Critical Toyo Communication Equipment Co Ltd
Priority to JP29163299A priority Critical patent/JP2001111378A/en
Publication of JP2001111378A publication Critical patent/JP2001111378A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a surface acoustic wave element for preventing the deterioration of temperature frequency characteristics of a surface acoustic wave element in which a piezoelectric substrate is constituted of piezoelectric materials whose electro-mechanical coefficient is larger than that of crystals such as an LN or LT, and for preventing the increase of a loss due to the deterioration of an excitation level generated at the time of preventing the deterioration of the temperature frequency characteristics by forming a thin film such as an SiO2 on the piezoelectric substrate including electrode fingers. SOLUTION: In a surface acoustic wave element formed by forming a comb- shaped electrode 13 on one face of a piezoelectric substrate 11 constituted of piezoelectric materials, an expansion controlling plate 14 constituted of materials whose thermal expansion coefficient is smaller than that of the piezoelectric materials constituting the piezoelectric substrate is connected and integrated with the other face of the piezoelectric substrate.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は弾性表面波素子の改
良に関し、特に水晶よりも電気機械的係数が大きい圧電
材料を圧電基板として使用する弾性表面波素子の欠点で
ある温度周波数特性の低下という問題を解決した弾性表
面波素子に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement of a surface acoustic wave device, and more particularly to a reduction in temperature-frequency characteristics which is a drawback of a surface acoustic wave device using a piezoelectric material having a larger electromechanical coefficient than quartz as a piezoelectric substrate. The present invention relates to a surface acoustic wave device that solves the problem.

【0002】[0002]

【従来の技術】弾性表面波素子は水晶等の圧電基板上に
櫛歯状の電極指を配置した構成を備え、例えばこれらの
電極に高周波電界を印加することによって弾性表面波を
励起し、弾性表面波を圧電反作用によって高周波電界に
変換することによってフィルタ特性を得るものである。
水晶を用いた弾性表面波素子は、温度特性の点では優れ
ているものの、電気機械結合係数が小さい為に損失が大
きいという欠点を有する。即ち、水晶は電気的作用と機
械的作用との結合係数が小さい為、水晶基板上に多数の
電極指を配置することによって初めて必要十分な特性を
確保でき、その結果水晶基板の面積が大きくならざるを
得ず、小型化に限界があった。これに対して、ニオブ酸
リチウム(LiNbO3,以下、LNと称する)、或は
タンタル酸リチウム(TiTaO3、以下、LTと称す
る)等の圧電材料を用いた弾性表面波素子は、損失が小
さいという利点を有する一方で、温度周波数特性が悪い
という欠点を有する。即ち、LNやLTは、電気的作用
と機械的作用との結合係数が非常に大きい為、少ない数
の電極を基板上に設けるだけで十分に強い励振を確保す
ることができ、弾性表面波素子及びこの素子を用いた弾
性表面波デバイスの小型化を図ることができるという利
点を有する一方で、熱によってLN基板が面方向に伸縮
し易いことに起因して、基板上に電極指間隔が変動し、
得られる周波数が変動する、という欠点を有する。
2. Description of the Related Art A surface acoustic wave element has a structure in which comb-teeth-shaped electrode fingers are arranged on a piezoelectric substrate made of quartz or the like. For example, a high-frequency electric field is applied to these electrodes to excite a surface acoustic wave to generate a surface acoustic wave. The filter characteristic is obtained by converting a surface wave into a high-frequency electric field by a piezoelectric reaction.
Although the surface acoustic wave element using quartz is excellent in temperature characteristics, it has a disadvantage that the loss is large because the electromechanical coupling coefficient is small. In other words, quartz has a small coupling coefficient between the electrical and mechanical actions, so that the necessary and sufficient characteristics can be secured only by arranging a large number of electrode fingers on the quartz substrate. As a result, if the area of the quartz substrate is large, Inevitably, miniaturization was limited. On the other hand, a surface acoustic wave element using a piezoelectric material such as lithium niobate (LiNbO 3 , hereinafter referred to as LN) or lithium tantalate (TiTaO 3 , hereinafter referred to as LT) has a small loss. On the other hand, it has the disadvantage of poor temperature-frequency characteristics. That is, since LN and LT have a very large coupling coefficient between the electric action and the mechanical action, a sufficiently strong excitation can be ensured only by providing a small number of electrodes on the substrate. In addition, while the surface acoustic wave device using this element can be downsized, the distance between the electrode fingers fluctuates on the substrate due to the fact that the LN substrate easily expands and contracts in the plane direction due to heat. And
It has the disadvantage that the resulting frequency varies.

【0003】LNやLTから成る圧電基板を用いた弾性
表面波素子が有する上記欠点である温度周波数特性の悪
さを改善する為に、例えば従来は図3に示した如く、L
Nから成る圧電基板1の表面上に形成した電極指2を覆
うように、圧電基板表面をSiO2等の薄膜3にて被覆
一体化することが行われていた。即ち、SiO2の如く
熱膨張係数の小さい物質を圧電基板1上に成膜して基板
表面及び電極指2を機械的に固定することによって熱に
よる膨張収縮を強制的に抑え込む対策が採られていた。
しかし、基板上に薄膜3を成膜することにより質量が付
加される為、これが電極指を含む基板表面の自由な動き
を阻害する要因となり、LT基板のメリットとされる発
振強度の強さが減殺されて励振レベルが低下して損失が
増大し、LN、LTのメリットを損ねる結果をもたらし
ていた。これを換言すれば、SiO 2等の薄膜3が電極
指2を含む基板表面をリジッドに押え込むので、LT基
板1は熱により伸縮しなくなり温度周波数特性が安定す
る一方で、この薄膜3が基板表面の自由な励振をも抑え
込んでしまう結果をもたらす。また、SiO2等の薄膜
3は液相成長、或は気相成長等によって圧電基板1上に
成膜されるが、これらの手法を用いた成膜には長時間を
要する為、生産性を高めることに限界が生じている。
[0003] Elasticity using a piezoelectric substrate made of LN or LT
Poor temperature-frequency characteristics, which is the above disadvantage of surface acoustic wave elements
In order to improve the efficiency, for example, conventionally, as shown in FIG.
Cover the electrode fingers 2 formed on the surface of the piezoelectric substrate 1 made of N.
As shown in FIG.TwoCoated with thin film 3
Integration was being done. That is, SiOTwoLike
A substance having a small coefficient of thermal expansion is formed on the piezoelectric substrate 1
Heat by mechanically fixing the surface and the electrode fingers 2
Measures have been taken to forcibly suppress the expansion and contraction caused by this.
However, the mass is increased by forming the thin film 3 on the substrate.
Is added, this is the free movement of the substrate surface including the electrode fingers
Is a factor that hinders the development of the LT board.
The intensity of the vibration intensity is reduced, the excitation level is reduced, and the loss is
Increase, resulting in a loss of the benefits of LN and LT
I was In other words, SiO TwoThin film 3 is an electrode
Since the substrate surface including the finger 2 is pressed down rigidly, the LT base
The plate 1 does not expand and contract due to heat, and the temperature-frequency characteristics are stabilized.
On the other hand, the thin film 3 also suppresses free excitation of the substrate surface.
Results in intrusion. In addition, SiOTwoEtc. thin film
Reference numeral 3 denotes a liquid phase growth or a vapor phase growth on the piezoelectric substrate 1.
Deposits using these techniques require a long time.
As a result, there is a limit in increasing productivity.

【0004】[0004]

【発明が解決しようとする課題】本発明が解決しようと
する課題は、LN、LT等、水晶よりも電気機械的係数
が大きい圧電材料を圧電基板として使用する弾性表面波
素子の不具合である温度周波数特性の低下という問題を
解決すると同時に、電極指を含む圧電基板上にSiO2
等の薄膜を成膜することによって温度周波数特性の低下
を防止した場合に生じる不具合である励振レベルの低下
による損失の増大という問題を解決することができる弾
性表面波素子を提供することにある。
SUMMARY OF THE INVENTION The problem to be solved by the present invention is the temperature, which is a defect of a surface acoustic wave element using a piezoelectric material such as LN and LT having a larger electromechanical coefficient than quartz as a piezoelectric substrate. At the same time as solving the problem of the deterioration of the frequency characteristics, SiO 2 was placed on the piezoelectric substrate including the electrode fingers.
It is an object of the present invention to provide a surface acoustic wave device that can solve the problem of an increase in loss due to a decrease in excitation level, which is a problem that occurs when a decrease in temperature-frequency characteristics is prevented by forming a thin film such as the above.

【0005】[0005]

【課題を解決するための手段】上記課題を解決するた
め、請求項1の発明は、圧電材料から成る圧電基板の一
方の面上に櫛形電極を形成して成る弾性表面波素子にお
いて、前記圧電基板の他方の面上に圧電基板を構成する
圧電材料よりも熱膨張係数の小さい材料から成る伸縮規
制板を接合一体化したことを特徴とする。請求項2の発
明は、圧電材料から成る圧電基板の一方の面上に櫛形電
極を形成して成る弾性表面波素子をパッケージ内に収容
した弾性表面波デバイスにおいて、前記圧電基板の他方
の面上に、圧電基板を構成する圧電材料よりも熱膨張係
数の小さい材料から成りかつ圧電基板よりも面積の大き
い伸縮規制板を接合一体化し、前記圧電基板の周縁から
はみ出した伸縮規制板の張り出し部に金属キャップの裾
部を固定することにより、圧電基板を含む伸縮規制板の
上面を金属キャップにより封止したことを特徴とする。
請求項3の発明は、前記圧電材料は、ニオブ酸リチウ
ム、或はタンタル酸リチウムであることを特徴とする。
請求項4の発明は、前記伸縮規制板は、SiO2である
ことを特徴とする。
According to a first aspect of the present invention, there is provided a surface acoustic wave device in which a comb-shaped electrode is formed on one surface of a piezoelectric substrate made of a piezoelectric material. An expansion / contraction regulating plate made of a material having a smaller coefficient of thermal expansion than the piezoelectric material constituting the piezoelectric substrate is joined and integrated on the other surface of the substrate. According to a second aspect of the present invention, there is provided a surface acoustic wave device in which a surface acoustic wave element having a comb-shaped electrode formed on one surface of a piezoelectric substrate made of a piezoelectric material is housed in a package. In addition, the expansion and contraction restricting plate made of a material having a smaller coefficient of thermal expansion than the piezoelectric material constituting the piezoelectric substrate and having a larger area than the piezoelectric substrate is joined and integrated, and the extension of the expansion and contraction restricting plate protruding from the peripheral edge of the piezoelectric substrate is formed. By fixing the bottom of the metal cap, the upper surface of the expansion / contraction regulating plate including the piezoelectric substrate is sealed by the metal cap.
The invention according to claim 3 is characterized in that the piezoelectric material is lithium niobate or lithium tantalate.
The invention of claim 4 is characterized in that the expansion / contraction regulating plate is made of SiO 2 .

【0006】[0006]

【発明の実施の形態】以下、本発明を図面に示した実施
形態により詳細に説明する。図1は本発明に係る弾性表
面波素子の一例の断面図であり、この弾性表面波素子は
ニオブ酸リチウム(LiNbO3 ,以下、LNと称す
る)、或はタンタル酸リチウム(TiTaO3 、以下、
LTと称する)等の圧電材料から成る圧電基板11の表
面上に、励振用の複数の電極指12から成る櫛形電極1
3を形成するとともに、圧電基板11の裏面に圧電基板
を構成する材料よりも熱膨張係数の小さい材料、例えば
SiO2ガラスから成る伸縮規制板14を接合一体化し
た構成を備えている。伸縮規制板14を圧電基板11の
裏面に一体化することにより、電極指12を含む基板表
面に対する機械的拘束を一切加えることなく、圧電基板
11の熱膨張を抑制して周波数の変化率を低減させるこ
とを可能とした。なお、伸縮規制板14としては圧電基
板の材質よりも熱膨張係数の小さい材料から成る伸縮規
制板であればよく、例えばSiO2ガラスの代わりに、
石英ガラスを用いてもよい。なお、圧電基板11の裏面
に対して伸縮規制板14を一体的に接合する手段として
接着剤を使用することは本発明の目的から、あまり望ま
しい選択とは言えない。それは、圧電基板11の裏面と
伸縮規制板14との間に接着剤が介在することにより、
接着剤が緩衝材として作用して圧電基板の熱による伸縮
を伸縮規制板14が規制することができなくなるからで
ある。そこで、本発明では、直接接合方法を採用する。
本発明において採用する直接接合方法とは、圧電基板裏
面と、伸縮規制板14の接合面を、夫々超清浄面に仕上
げてから水素化処理(親水処理)を施して面接触状態で
密着させ、その後加熱処理することにより接合一体化す
る処理である。具体的には、例えば両接合面を夫々超鏡
面状に研磨してから、両面を夫々過酸化水素水にて洗浄
して活性化させてから密着させることにより水素と酸素
の分子レベルでの結合を実現する手法を例示することが
できる。この水素化処理後に加熱処理を施すことにより
接合を完了する。このように接着剤を介在させない直接
接合方法により圧電基板11の裏面に対して直接伸縮規
制板14を密着接合するので、温度環境の変動によって
圧電基板11がその面方向へ伸縮しようとしても、熱膨
張係数の小さい材質からなる伸縮規制板14により圧電
基板の伸縮が規制され、圧電基板表面の電極指間のピッ
チに変動が生じることがなくなる。このため、圧電基板
1の励振が阻害されることがなくなり、所望の周波数を
安定して出力することが可能となる。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to embodiments shown in the drawings. FIG. 1 is a cross-sectional view of an example of a surface acoustic wave device according to the present invention. The surface acoustic wave device includes lithium niobate (LiNbO3, hereinafter referred to as LN) or lithium tantalate (TiTaO3, hereinafter).
A comb-shaped electrode 1 composed of a plurality of electrode fingers 12 for excitation is provided on a surface of a piezoelectric substrate 11 made of a piezoelectric material such as LT.
3, and a structure in which a material having a smaller coefficient of thermal expansion than the material forming the piezoelectric substrate, for example, an expansion / contraction regulating plate 14 made of SiO 2 glass is joined and integrated on the back surface of the piezoelectric substrate 11. By integrating the expansion / contraction regulating plate 14 on the back surface of the piezoelectric substrate 11, the thermal expansion of the piezoelectric substrate 11 is suppressed and the rate of change in frequency is reduced without any mechanical constraint on the substrate surface including the electrode fingers 12. It was made possible. Note that the expansion / contraction regulating plate 14 may be any expansion / contraction regulating plate made of a material having a smaller coefficient of thermal expansion than the material of the piezoelectric substrate. For example, instead of SiO 2 glass,
Quartz glass may be used. The use of an adhesive as a means for integrally joining the expansion / contraction regulating plate 14 to the back surface of the piezoelectric substrate 11 is not a very desirable choice for the purpose of the present invention. It is because the adhesive is interposed between the back surface of the piezoelectric substrate 11 and the expansion / contraction regulating plate 14,
This is because the adhesive acts as a buffer and the expansion / contraction restricting plate 14 cannot restrict expansion and contraction of the piezoelectric substrate due to heat. Therefore, in the present invention, a direct joining method is employed.
The direct bonding method employed in the present invention means that the back surface of the piezoelectric substrate and the bonding surface of the expansion / contraction regulating plate 14 are each finished to an ultra-clean surface, and then subjected to a hydrogenation treatment (hydrophilic treatment) so that they are brought into close contact with each other in a surface contact state. Thereafter, it is a process of joining and integrating by heating. Specifically, for example, both bonding surfaces are each polished to a super-mirror shape, and then both surfaces are respectively cleaned and activated with a hydrogen peroxide solution to be activated and then adhered to each other to bond hydrogen and oxygen at a molecular level. Can be exemplified. The bonding is completed by performing a heat treatment after the hydrogenation treatment. As described above, the expansion and contraction restricting plate 14 is directly adhered to the back surface of the piezoelectric substrate 11 by the direct bonding method without the interposition of an adhesive. The expansion and contraction of the piezoelectric substrate is restricted by the expansion and contraction restricting plate 14 made of a material having a small expansion coefficient, so that the pitch between the electrode fingers on the surface of the piezoelectric substrate does not change. Therefore, the excitation of the piezoelectric substrate 1 is not hindered, and a desired frequency can be output stably.

【0007】次に、図2は本発明の第2の実施形態を示
す分解斜視図、及び縦断面図であり、図1の実施形態の
如き複合基板構造を備えた弾性表面波素子をパッケージ
化する際の構成例である。即ち、上記第1の実施形態で
は伸縮規制板14の平面形状を圧電基板11の底面形状
と一致させることにより、両者を接合したときに伸縮規
制板14が圧電基板11の周縁からはみ出すことがない
ように構成したが、第2の実施形態では伸縮規制板14
の四辺の長さを圧電基板の四辺の長さよりも長く設定す
ることにより、伸縮規制板14の中央部に圧電基板11
を直接接合したときに、圧電基板11の周縁から伸縮規
制板14がはみ出すように構成している。本実施形態で
は更に圧電基板11の周縁からはみ出した伸縮規制板1
4の張り出し部15の上面を、金属キャップ16の裾部
を接着固定するスペースとして利用している。つまり、
金属キャップ16の裾部を張り出し部15の上面に接着
剤等により固定することにより、パッケージ化された弾
性表面波デバイスを完成し、低背化を図っているのであ
る。ところで、従来の弾性表面波デバイスにあっては、
圧電基板とは格別のパッケージを用い、上面が開口した
箱形の下側パッケージの内底面上に圧電基板を搭載した
後で、下側パッケージの開口周縁に金属蓋を固定して開
口を封止していたが、このパッケージ構造を本発明に係
る弾性表面波デバイスに適用すると、伸縮規制板14の
肉厚分だけパッケージの高さが増大するという問題があ
る。これに対して本実施形態では圧電基板の底面に接合
した伸縮規制板14をパッケージの底板として兼用する
ので、従来のパッケージと同等の低背化を実現すること
ができる。図2に示した弾性表面波デバイスは表面実装
型である為、伸縮規制板14の底面に電極指等と接続し
た図示しない外部電極を設けることは勿論である。
Next, FIG. 2 is an exploded perspective view and a longitudinal sectional view showing a second embodiment of the present invention. A surface acoustic wave device having a composite substrate structure as in the embodiment of FIG. 1 is packaged. This is an example of the configuration when performing. That is, in the first embodiment, the planar shape of the expansion / contraction regulating plate 14 matches the bottom surface shape of the piezoelectric substrate 11, so that when the two are joined, the expansion / contraction regulating plate 14 does not protrude from the peripheral edge of the piezoelectric substrate 11. However, in the second embodiment, the expansion and contraction regulating plate 14 is used.
Are set longer than the lengths of the four sides of the piezoelectric substrate, the piezoelectric substrate 11
Are configured so that the expansion / contraction regulating plate 14 protrudes from the peripheral edge of the piezoelectric substrate 11 when they are directly joined. In the present embodiment, the expansion / contraction regulating plate 1 further protruding from the peripheral edge of the piezoelectric substrate 11.
The upper surface of the overhanging portion 15 is used as a space for adhesively fixing the skirt of the metal cap 16. That is,
By fixing the skirt portion of the metal cap 16 to the upper surface of the overhang portion 15 with an adhesive or the like, a packaged surface acoustic wave device is completed, and the height is reduced. By the way, in the conventional surface acoustic wave device,
After mounting the piezoelectric substrate on the inner bottom surface of a box-shaped lower package with an open top using a special package from the piezoelectric substrate, fix the metal lid around the opening edge of the lower package and seal the opening However, when this package structure is applied to the surface acoustic wave device according to the present invention, there is a problem that the height of the package is increased by the thickness of the expansion / contraction regulating plate 14. On the other hand, in the present embodiment, since the expansion / contraction regulating plate 14 joined to the bottom surface of the piezoelectric substrate is also used as the bottom plate of the package, it is possible to realize the same low profile as the conventional package. Since the surface acoustic wave device shown in FIG. 2 is a surface mount type, it goes without saying that an external electrode (not shown) connected to an electrode finger or the like is provided on the bottom surface of the expansion / contraction regulating plate 14.

【0008】[0008]

【発明の効果】以上のように本発明によれば、LN、L
T等から成る圧電基板の裏面側に圧電基板材料よりも熱
膨張係数の小さい材質から成る伸縮規制板を直接接合し
たので、圧電基板表面の励振を妨げたり、熱により電極
指ピッチが伸縮する等の不具合を生じることがなくな
る。即ち、LN、LT等、水晶よりも電気機械的係数が
大きい圧電材料を圧電基板として使用する弾性表面波素
子の不具合である温度周波数特性の低下という問題を解
決することができ、更に、電極指を含む圧電基板上にS
iO2等の薄膜を成膜することによって温度周波数特性
の低下を防止した場合に生じる不具合である励振レベル
の低下による損失の増大という問題を解決することがで
きる。また、このように圧電基板の裏面に伸縮規制板を
接合した複合弾性表面波素子は、伸縮規制板の分だけ肉
厚が大きくなる為、これを従来のパッケージ内に収容し
た場合にはパッケージの全高が大きくならざるを得ない
が、伸縮規制板をパッケージの底板として兼用すること
により、この弾性表面波素子を用いたデバイスの高背化
を有効に防止することができる。
As described above, according to the present invention, LN, LN
Since the expansion / contraction regulating plate made of a material having a smaller thermal expansion coefficient than the piezoelectric substrate material is directly bonded to the back side of the piezoelectric substrate made of T or the like, the excitation of the piezoelectric substrate surface is prevented, and the electrode finger pitch expands / contracts due to heat, etc. The problem described above is not caused. That is, it is possible to solve the problem of a decrease in temperature-frequency characteristics, which is a defect of a surface acoustic wave element using a piezoelectric material having a larger electromechanical coefficient than quartz, such as LN and LT, as a piezoelectric substrate. On a piezoelectric substrate containing
It is possible to solve the problem of an increase in loss due to a decrease in excitation level, which is a problem that occurs when a decrease in temperature-frequency characteristics is prevented by forming a thin film such as iO 2 . In addition, since the composite surface acoustic wave element in which the expansion and contraction restricting plate is joined to the back surface of the piezoelectric substrate has a larger thickness by the amount of the expansion and contraction restricting plate, if this is accommodated in a conventional package, Although the overall height is inevitably large, the use of the expansion / contraction regulating plate as the bottom plate of the package can effectively prevent the height of the device using the surface acoustic wave element from increasing.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施形態に係る弾性表面波素子の断
面図。
FIG. 1 is a sectional view of a surface acoustic wave device according to an embodiment of the present invention.

【図2】(a) 及び(b) は本発明の実施形態に係る弾性表
面波デバイスの分解斜視図、及び断面図。
2A and 2B are an exploded perspective view and a sectional view of a surface acoustic wave device according to an embodiment of the present invention.

【図3】従来例の説明図。FIG. 3 is an explanatory view of a conventional example.

【符号の説明】[Explanation of symbols]

11 圧電基板、12 電極指、13 櫛形電極、14
伸縮規制板、15 張り出し部、16 金属キャッ
プ。
11 piezoelectric substrate, 12 electrode finger, 13 comb-shaped electrode, 14
Telescopic control plate, 15 overhang, 16 metal cap.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 圧電材料から成る圧電基板の一方の面上
に櫛形電極を形成して成る弾性表面波素子において、 前記圧電基板の他方の面上に圧電基板を構成する圧電材
料よりも熱膨張係数の小さい材料から成る伸縮規制板を
接合一体化したことを特徴とする弾性表面波素子。
1. A surface acoustic wave device comprising a piezoelectric substrate made of a piezoelectric material and a comb-shaped electrode formed on one surface of the piezoelectric substrate, wherein the surface of the piezoelectric substrate is more thermally expanded than the piezoelectric material constituting the piezoelectric substrate on the other surface of the piezoelectric substrate. A surface acoustic wave device characterized in that an expansion / contraction regulating plate made of a material having a small coefficient is joined and integrated.
【請求項2】 圧電材料から成る圧電基板の一方の面上
に櫛形電極を形成して成る弾性表面波素子をパッケージ
内に収容した弾性表面波デバイスにおいて、 前記圧電基板の他方の面上に、圧電基板を構成する圧電
材料よりも熱膨張係数の小さい材料から成りかつ圧電基
板よりも面積の大きい伸縮規制板を接合一体化し、 前記圧電基板の周縁からはみ出した伸縮規制板の張り出
し部に金属キャップの裾部を固定することにより、圧電
基板を含む伸縮規制板の上面を金属キャップにより封止
したことを特徴とする弾性表面波デバイス。
2. A surface acoustic wave device in which a surface acoustic wave element formed by forming a comb-shaped electrode on one surface of a piezoelectric substrate made of a piezoelectric material is housed in a package. An expansion / contraction restricting plate made of a material having a smaller coefficient of thermal expansion than the piezoelectric material constituting the piezoelectric substrate and having a larger area than the piezoelectric substrate is joined and integrated, and a metal cap is provided on a protruding portion of the expansion / contraction restricting plate which protrudes from the periphery of the piezoelectric substrate. A surface acoustic wave device characterized in that an upper surface of an expansion / contraction regulating plate including a piezoelectric substrate is sealed with a metal cap by fixing a bottom portion of the surface acoustic wave device.
【請求項3】 前記圧電材料は、ニオブ酸リチウム、或
はタンタル酸リチウムであることを特徴とする請求項1
又は2記載の弾性表面波素子及び弾性表面波デバイス。
3. The method according to claim 1, wherein the piezoelectric material is lithium niobate or lithium tantalate.
Or the surface acoustic wave device and the surface acoustic wave device according to 2.
【請求項4】 前記伸縮規制板は、SiO2であること
を特徴とする請求項1又は2記載の弾性表面波素子及び
弾性表面波デバイス。
4. The surface acoustic wave element and the surface acoustic wave device according to claim 1, wherein the expansion / contraction regulating plate is made of SiO 2 .
JP29163299A 1999-10-13 1999-10-13 Surface acoustic wave element and surface acoustic wave device Pending JP2001111378A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29163299A JP2001111378A (en) 1999-10-13 1999-10-13 Surface acoustic wave element and surface acoustic wave device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29163299A JP2001111378A (en) 1999-10-13 1999-10-13 Surface acoustic wave element and surface acoustic wave device

Publications (1)

Publication Number Publication Date
JP2001111378A true JP2001111378A (en) 2001-04-20

Family

ID=17771480

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29163299A Pending JP2001111378A (en) 1999-10-13 1999-10-13 Surface acoustic wave element and surface acoustic wave device

Country Status (1)

Country Link
JP (1) JP2001111378A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009011004A (en) * 2006-07-27 2009-01-15 Koike Co Ltd Method for manufacturing piezo-electric device
JP2009055625A (en) * 2006-07-27 2009-03-12 Koike Co Ltd Method of manufacturing piezoelectric element
JP2009188844A (en) * 2008-02-08 2009-08-20 Fujitsu Media Device Kk Surface acoustic wave device and manufacturing method thereof
JP2010153962A (en) * 2008-12-24 2010-07-08 Ngk Insulators Ltd Method of manufacturing composite substrate, and composite substrate
US20100293770A1 (en) * 2008-01-24 2010-11-25 Murata Manufacturing Co., Ltd. Method for manufacturing acoustic wave device
WO2011034136A1 (en) * 2009-09-18 2011-03-24 住友電気工業株式会社 Substrate, manufacturing method of substrate, saw device, and device
JP2011066818A (en) * 2009-09-18 2011-03-31 Sumitomo Electric Ind Ltd Substrate, saw device and device
JP2011130385A (en) * 2009-12-21 2011-06-30 Murata Mfg Co Ltd Method of manufacturing piezoelectric device
US8614535B2 (en) 2010-09-07 2013-12-24 Sumitomo Electric Industries, Ltd. Substrate, manufacturing method of substrate and saw device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009011004A (en) * 2006-07-27 2009-01-15 Koike Co Ltd Method for manufacturing piezo-electric device
JP2009055625A (en) * 2006-07-27 2009-03-12 Koike Co Ltd Method of manufacturing piezoelectric element
US20100293770A1 (en) * 2008-01-24 2010-11-25 Murata Manufacturing Co., Ltd. Method for manufacturing acoustic wave device
US8997320B2 (en) * 2008-01-24 2015-04-07 Murata Manufacturing Co., Ltd. Method for manufacturing acoustic wave device
JP2009188844A (en) * 2008-02-08 2009-08-20 Fujitsu Media Device Kk Surface acoustic wave device and manufacturing method thereof
JP2010153962A (en) * 2008-12-24 2010-07-08 Ngk Insulators Ltd Method of manufacturing composite substrate, and composite substrate
WO2011034136A1 (en) * 2009-09-18 2011-03-24 住友電気工業株式会社 Substrate, manufacturing method of substrate, saw device, and device
JP2011066818A (en) * 2009-09-18 2011-03-31 Sumitomo Electric Ind Ltd Substrate, saw device and device
JP2011130385A (en) * 2009-12-21 2011-06-30 Murata Mfg Co Ltd Method of manufacturing piezoelectric device
US8614535B2 (en) 2010-09-07 2013-12-24 Sumitomo Electric Industries, Ltd. Substrate, manufacturing method of substrate and saw device

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