JP2001110839A - Bonding device - Google Patents

Bonding device

Info

Publication number
JP2001110839A
JP2001110839A JP28705299A JP28705299A JP2001110839A JP 2001110839 A JP2001110839 A JP 2001110839A JP 28705299 A JP28705299 A JP 28705299A JP 28705299 A JP28705299 A JP 28705299A JP 2001110839 A JP2001110839 A JP 2001110839A
Authority
JP
Japan
Prior art keywords
capillary
bonding
wire
lead frame
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28705299A
Other languages
Japanese (ja)
Inventor
Shunichi Hashiguchi
俊一 橋口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP28705299A priority Critical patent/JP2001110839A/en
Publication of JP2001110839A publication Critical patent/JP2001110839A/en
Pending legal-status Critical Current

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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a bonding device which can preventing that out gas exhausted in a WB process from a bonding agent from adhering to a bonding tool, which is mounted with the die pad of a lead frame or a package and a semiconductor chip, and generating various troubles. SOLUTION: An air blow nozzle 20 for jetting the dry air for blowing off out gas, which is exhausted from an Ag paste resin 12 at the time of a wire- bonding to a semiconductor chip 14, is arranged in the vicinity of a capillary 16 of a wire-bonding device. Because of this, it is suppressed and reduced in a WB process using a heating pressure bonding method that the out gas exhausted from the resin 12 adheres to the point part of the capillary 16 or the interior of a through hole formed in the point part of the capillary 16 and is turned into a foreign material to deposit on the point part or the interior, the generation of a defect in the capillary 16 is prevented and it is also eliminated that the favorable passage of an Au wire is hindered.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明はボンディング装置に
係り、特にリードフレーム又はパッケージのダイパッド
上に接着剤を介して装着した半導体チップとリードフレ
ーム又はパッケージのリード端子とを金属細線によって
接続する際、熱を利用してワイヤボンディングを行うボ
ンディング装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding apparatus, and more particularly to a bonding apparatus for connecting a semiconductor chip mounted on a die pad of a lead frame or a package via an adhesive to a lead terminal of the lead frame or a package by a thin metal wire. The present invention relates to a bonding apparatus that performs wire bonding using heat.

【０００２】[0002]

【従来の技術】従来の半導体装置の組立て工程における
ＤＢ（Die Bonding ；ダイボンディング）プロセス及び
ＷＢ（Wire Bonding；ワイヤボンディング）プロセス
を、図６〜図１０を用いて説明する。ここで、図６はＤ
Ｂプロセスを説明するための概略斜視図であり、図７及
び図８はそれぞれＡｇペースト樹脂のキュア処理を説明
するための概略断面図であり、図９はＷＢプロセスを説
明するための概略斜視図であり、図１０（ａ）〜（ｇ）
はそれぞれ図９に示すＷＢプロセスの具体的な手順を示
す概略断面図である。2. Description of the Related Art A DB (die bonding) process and a WB (wire bonding) process in a conventional semiconductor device assembling process will be described with reference to FIGS. Here, FIG.
FIG. 7 and FIG. 8 are schematic cross-sectional views for explaining a curing process of an Ag paste resin, and FIG. 9 is a schematic perspective view for explaining a WB process. 10 (a) to (g).
10 is a schematic sectional view showing a specific procedure of the WB process shown in FIG. 9.

【０００３】先ず、図６に示されるように、ＤＢプロセ
スにおいて、リードフレーム５０のダイパッド５２上
に、接着剤としてのＡｇ（銀）ペースト樹脂５４を、そ
れを収容している樹脂用容器５６から樹脂用ノズル５８
を介して塗布する。続いて、各半導体チップにダイシン
グ（dicing）されたウェーハ６０から、良品の半導体チ
ップ６２を選別し、コレット６４により吸着保持してダ
イパッド５２上方に移動し、Ａｇペースト樹脂５４が塗
布されているダイパッド５２上にマウントする。こうし
て、リードフレーム５０のダイパッド５２上にＡｇペー
スト樹脂５４を介して良品の半導体チップ６２を装着す
る。First, as shown in FIG. 6, in a DB process, an Ag (silver) paste resin 54 as an adhesive is placed on a die pad 52 of a lead frame 50 from a resin container 56 containing the paste. Nozzle 58 for resin
And applied through. Subsequently, non-defective semiconductor chips 62 are selected from the wafers 60 diced into the respective semiconductor chips, sucked and held by the collet 64, moved to the upper side of the die pad 52, and the die pad on which the Ag paste resin 54 is applied. 52 is mounted. Thus, the non-defective semiconductor chip 62 is mounted on the die pad 52 of the lead frame 50 via the Ag paste resin 54.

【０００４】次いで、このダイパッド５２上にＡｇペー
スト樹脂５４を介して良品の半導体チップ６２を装着し
たリードフレーム５０に対する加熱処理を施し、Ａｇペ
ースト樹脂５４を硬化させるキュア（cure）処理を行
う。Next, a heat treatment is applied to the lead frame 50 on which the non-defective semiconductor chip 62 is mounted on the die pad 52 via the Ag paste resin 54, and a cure process for curing the Ag paste resin 54 is performed.

【０００５】具体的には、例えば図７に示されるよう
に、オーブン７０内において、ダイパッド５２上にＡｇ
ペースト樹脂５４を介して半導体チップ６２が装着され
ているリードフレーム５０を、ヒータ７２によって１８
０℃〜２４０℃に加熱したヒートプレート７４上に搭載
し、所定の時間をかけて矢印方向に順に搬送する。或い
はまた、例えば図８に示されるように、オーブン７６内
において、ダイパッド５２上にＡｇペースト樹脂５４を
介して半導体チップ６２が装着されているリードフレー
ム５０を多数収納しているフレームマガジン７８を、周
囲のヒータ８０により１８０℃〜２４０℃に加熱して状
態で所定の時間保管する。More specifically, for example, as shown in FIG.
The lead frame 50 on which the semiconductor chip 62 is mounted via the paste resin 54 is
It is mounted on a heat plate 74 heated to 0 ° C. to 240 ° C. and transported in the direction of the arrow in a predetermined time. Alternatively, for example, as shown in FIG. 8, in an oven 76, a frame magazine 78 containing a large number of lead frames 50 on which the semiconductor chips 62 are mounted on the die pad 52 via the Ag paste resin 54 is provided. It is heated to 180 ° C. to 240 ° C. by the surrounding heater 80 and stored for a predetermined time in a state.

【０００６】何れの場合においても、このＡｇペースト
樹脂５４のキュア処理の際に、Ａｇペースト樹脂５４か
らはその希釈成分であるフェノールが放出される（以
下、この放出されるＡｇペースト樹脂５４の希釈成分を
「アウトガス」という）。そして、このＡｇペースト樹
脂５４からのアウトガス（図７中において、模式的に雲
状に表示している）は、各オーブン７０、７６にそれぞ
れ設けられている排気口８２、８４から外部に排気され
るようになっている。In any case, when the Ag paste resin 54 is cured, phenol, which is a diluting component thereof, is released from the Ag paste resin 54 (hereinafter referred to as dilution of the released Ag paste resin 54). The component is called “outgas”). The outgas from the Ag paste resin 54 (shown schematically as a cloud in FIG. 7) is exhausted to the outside through exhaust ports 82 and 84 provided in the ovens 70 and 76, respectively. It has become so.

【０００７】こうして、Ａｇペースト樹脂５４のキュア
処理により、Ａｇペースト樹脂５４を硬化させ、リード
フレーム５０のダイパッド５２上への半導体チップ６２
の装着を強固なものとする。Thus, the Ag paste resin 54 is cured by the curing process of the Ag paste resin 54, and the semiconductor chip 62 is placed on the die pad 52 of the lead frame 50.
The mounting of is firm.

【０００８】次いで、図９に示されるように、ＷＢプロ
セスにおいて、ボンディングツールとしてのキャピラリ
９０を用いて、リードフレーム５０のダイパッド５２上
に装着した半導体チップ６２表面上に形成されている約
８０μｍ×８０μｍ〜１００μｍ×１００μｍのＡｌ
（アルミニウム）電極９２とリードフレーム５０のイン
ナリード９４端子との間を、直径数十μｍの金属細線、
例えばＡｕ（金）ワイヤ９６によって結線する。Next, as shown in FIG. 9, in a WB process, using a capillary 90 as a bonding tool, about 80 μm × about 80 μm × formed on the surface of the semiconductor chip 62 mounted on the die pad 52 of the lead frame 50. 80 μm to 100 μm × 100 μm Al
(Aluminum) A thin metal wire having a diameter of several tens of μm is provided between the electrode 92 and the inner lead 94 terminal of the lead frame 50.
For example, the connection is made by an Au (gold) wire 96.

【０００９】具体的には、図１０（ａ）〜（ｇ）に示さ
れるように、ワイヤボンディング装置の２５０℃〜３０
０℃に加熱されたヒートブロック（図示せず）上にリー
ドフレーム５０を搭載した後、このリードフレーム５０
のダイパッド５２上に装着した半導体チップ６２上方に
キャピラリ９０を移動すると共に、このキャピラリ９０
を通るＡｕワイヤ９６の先端を球状にする。More specifically, as shown in FIGS.
After mounting the lead frame 50 on a heat block (not shown) heated to 0 ° C.,
The capillary 90 is moved to above the semiconductor chip 62 mounted on the die pad 52 of FIG.
The tip of the Au wire 96 passing through is made spherical.

【００１０】続いて、キャピラリ９０を降下させて、Ａ
ｕワイヤ９６の球状の先端を半導体チップ６２表面上の
Ａｌ電極９２に加熱圧着する。続いて、キャピラリ９０
を上昇させ、更に横方向にリードフレーム５０のインナ
リード９４端子上方にまで移動した後、再びキャピラリ
９０を降下させて、Ａｕワイヤ９６をリードフレーム５
０のインナリード９４端子に加熱圧着する。Subsequently, the capillary 90 is lowered, and A
The spherical tip of the u-wire 96 is heat-pressed to the Al electrode 92 on the surface of the semiconductor chip 62. Then, the capillary 90
And after moving further to the upper side of the inner lead 94 terminal of the lead frame 50, the capillary 90 is lowered again to connect the Au wire 96 to the lead frame 5.
The inner lead 94 terminal of No. 0 is heat-pressed.

【００１１】こうして、加熱圧着法を用いたＷＢプロセ
スにより、半導体チップ６２表面のＡｌ電極９２とリー
ドフレーム５０のインナリード９４端子との間をＡｕワ
イヤ９６によって結線する。その後、再びキャピラリ９
０を上昇させた後、トーチ電極９８を用いて、Ａｕワイ
ヤ９６を途中から切断すると共に、Ａｕワイヤ９６の先
端を球状にする。In this way, the Au wire 96 connects between the Al electrode 92 on the surface of the semiconductor chip 62 and the inner lead 94 terminal of the lead frame 50 by the WB process using the thermocompression bonding method. After that, the capillary 9 again
After raising 0, the Au wire 96 is cut from the middle using the torch electrode 98, and the tip of the Au wire 96 is made spherical.

【００１２】[0012]

【発明が解決しようとする課題】このように上記従来の
半導体装置の組立て工程におけるＤＢプロセス及び加熱
圧着法によるＷＢプロセスにおいては、リードフレーム
５０のダイパッド５２上にＡｇペースト樹脂５４を介し
て半導体チップ６２を装着した後、このＡｇペースト樹
脂５４を硬化させるために１８０℃〜２４０℃のキュア
処理を行うと共に、キャピラリ９０を用いてＡｕワイヤ
９６を半導体チップ６２表面上のＡｌ電極９２に加熱圧
着する際にも、Ａｕワイヤ９６とＡｌ電極９２との良好
な接合特性を確保するために、２５０℃〜３００℃の加
熱がなされている。As described above, in the DB process and the WB process by the heat compression method in the above-mentioned conventional semiconductor device assembling process, the semiconductor chip is placed on the die pad 52 of the lead frame 50 via the Ag paste resin 54. After mounting the Ag paste resin 54, a curing process at 180 ° C. to 240 ° C. is performed to cure the Ag paste resin 54, and the Au wire 96 is heated and pressed to the Al electrode 92 on the surface of the semiconductor chip 62 using the capillary 90. At this time, heating is performed at 250 ° C. to 300 ° C. in order to secure good bonding characteristics between the Au wire 96 and the Al electrode 92.

【００１３】このため、図１０（ａ）〜（ｇ）に示され
るＷＢプロセスの一連の動作中において、リードフレー
ム５０のダイパッド５２と半導体チップ６２とを装着し
ているＡｇペースト樹脂５４からは、再びアウトガス
（図１０中において、模式的に湯気が立っているように
表示する）が放出されている。For this reason, during a series of operations of the WB process shown in FIGS. 10A to 10G, the Ag paste resin 54 on which the die pad 52 of the lead frame 50 and the semiconductor chip 62 are mounted, Outgas is again emitted (in FIG. 10, schematically indicated as steaming).

【００１４】そして、この加熱圧着法によるＷＢプロセ
スにおいては、図７及び図８に示されるキュア処理の場
合のようにＡｇペースト樹脂５４からのアウトガスを排
気している措置に対応する何らの措置もとられていない
のが実情である。In the WB process by the thermocompression bonding method, there are no measures corresponding to the measures for exhausting the outgas from the Ag paste resin 54 as in the case of the curing treatment shown in FIGS. The fact is not taken.

【００１５】従って、加熱圧着法によるＷＢプロセスに
おいては、Ａｇペースト樹脂５４から放出されたアウト
ガスがキャピラリ９０の先端部又はＡｕワイヤ９６を通
す貫通口内部に付着し、異物となって堆積して、Ａｕワ
イヤ９６の良好な通りを阻害する。このため、キャピラ
リ９０に不良が発生し、ＷＢプロセスにおける歩留りの
低下や、キャピラリ９０の使用ライフの短縮化や、キャ
ピラリ９０の不良に起因する設備の稼働率の低下を招く
という問題が生じている。Therefore, in the WB process by the thermocompression bonding method, the outgas released from the Ag paste resin 54 adheres to the tip portion of the capillary 90 or the inside of the through hole through which the Au wire 96 passes, and deposits as foreign matter. It hinders the good passage of the Au wire 96. For this reason, a defect occurs in the capillary 90, which causes a problem of lowering the yield in the WB process, shortening the service life of the capillary 90, and lowering the operation rate of the equipment due to the defect of the capillary 90. .

【００１６】なお、ここでは、リードフレーム５０のダ
イパッド５２上にＡｇペースト樹脂５４を介して装着し
た半導体チップ６２に対するＷＢプロセスについて述べ
てきたが、リードフレーム５０の代わりに、金属基板又
はセラミック基板からなるパッケージを使用する場合に
も同様の問題が生じる。Although the WB process for the semiconductor chip 62 mounted on the die pad 52 of the lead frame 50 via the Ag paste resin 54 has been described here, a metal substrate or a ceramic substrate is used instead of the lead frame 50. A similar problem occurs when a different package is used.

【００１７】また、加熱圧着法によるＷＢプロセスの場
合について述べてきたが、加熱圧着法に限定されず、例
えば超音波併用加熱圧着法など、熱を利用するワイヤボ
ンディングであれば、同様の問題が生じる。Although the case of the WB process by the thermocompression bonding method has been described, the present invention is not limited to the thermocompression bonding method. Occurs.

【００１８】そこで本発明は、上記問題点を鑑みてなさ
れたものであり、ＷＢプロセスにおいて、リードフレー
ム又はパッケージのダイパッドと半導体チップとを装着
している接着剤から放出されたアウトガスがボンディン
グツールに付着し、種々の不都合を生じさせることを防
止することが可能なボンディング装置を提供することを
目的とする。The present invention has been made in view of the above problems, and in a WB process, outgas released from an adhesive mounting a die pad of a lead frame or a package and a semiconductor chip to a bonding tool. It is an object of the present invention to provide a bonding apparatus capable of preventing adhesion and various inconveniences.

【００１９】[0019]

【課題を解決するための手段】上記課題は、以下の本発
明に係るボンディング装置により達成される。即ち、請
求項１に係るボンディング装置は、ボンディングツール
を用いて、リードフレーム又はパッケージのダイパッド
上に接着剤を介して装着された半導体チップとリードフ
レーム又はパッケージのリード端子とを金属細線によっ
て接続するボンディング装置であって、接着剤から放出
されるアウトガスを吹き飛ばすための気体を噴出するノ
ズルが配置されていることを特徴とする。The above object is achieved by the following bonding apparatus according to the present invention. That is, the bonding apparatus according to claim 1 uses a bonding tool to connect a semiconductor chip mounted on a die pad of a lead frame or a package via an adhesive and a lead terminal of the lead frame or the package by a thin metal wire. A bonding apparatus, characterized in that a nozzle for blowing out gas for blowing out gas emitted from the adhesive is arranged.

【００２０】このように請求項１に係るボンディング装
置においては、気体を噴出するノズルが配置され、熱を
利用するワイヤボンディングの際に接着剤から放出され
るアウトガスを吹き飛ばすようになっていることによ
り、この接着剤からのアウトガスがボンディングツール
の先端部又は貫通口内部に付着することが抑制・低減さ
れる。このため、従来のようにボンディングツールの先
端部又は貫通口内部に付着したアウトガスが異物となっ
て堆積して金属細線の良好な通りを阻害することが防止
される。As described above, in the bonding apparatus according to the first aspect, the nozzle for ejecting the gas is arranged, and the outgas released from the adhesive is blown off at the time of wire bonding utilizing heat. In addition, the outgas from the adhesive is suppressed or reduced from adhering to the tip portion or the inside of the through hole of the bonding tool. For this reason, it is possible to prevent the outgas adhering to the tip end portion or the inside of the through-hole of the bonding tool from accumulating as a foreign substance and obstructing the fine metal wire from passing as in the related art.

【００２１】なお、上記請求項１に係るボンディング装
置において、ノズルから噴出される気体はドライエアー
であることが好適である。即ち、ドライエアーの使用
は、接着剤から放出されるアウトガスを吹き飛ばすとい
う機能を十全に果たすと共に、極めて容易で、安全性が
高く、かつ経済的にも安価だからである。In the bonding apparatus according to the first aspect, the gas ejected from the nozzle is preferably dry air. In other words, the use of dry air has a sufficient function of blowing out the outgas released from the adhesive, and is extremely easy, high in safety, and economically inexpensive.

【００２２】また、上記請求項１に係るボンディング装
置において、ノズルに、ノズルから噴出される気体の流
量を制御する流量制御手段が接続されていることが好適
である。この場合、この流量制御手段によってノズルか
ら噴出される気体の流量を制御することにより、接着剤
から放出されるアウトガスを吹き飛ばすという機能を十
全に果たすために必要な流量が確保される一方、その範
囲内で必要最小の流量に抑制することも可能になり、ま
た、ボンディングツールの先端部又は貫通口内部への異
物の付着の程度に応じて必要な流量を調整することも可
能になる。Further, in the bonding apparatus according to the first aspect, it is preferable that the nozzle is connected to a flow rate control means for controlling a flow rate of gas ejected from the nozzle. In this case, by controlling the flow rate of the gas ejected from the nozzle by the flow rate control means, the flow rate necessary to fully perform the function of blowing out the outgas released from the adhesive is secured, The flow rate can be suppressed to the minimum necessary flow rate within the range, and the required flow rate can be adjusted according to the degree of adhesion of foreign matter to the tip portion of the bonding tool or the inside of the through hole.

【００２３】なお、従来から、ボンディングツールと、
Ａｕ−Ｓｎ（錫）共晶合金法によるボンディング中にボ
ンディングツール表面に付着するＡｕ、Ｓｎ、Ｃｕ
（銅）の混合物質からなる異物を研磨除去するための研
磨材とを有するボンディング装置において、その研磨除
去の際に発生する付着異物や研磨材等の塵埃をエアーブ
ローするためのエアーノズルを備えたものがある。そし
て、こうした従来のボンディング装置に改良を加え、エ
アーノズルによってエアーブローされた塵埃を吸引する
ための吸引口が配設されたボンディング装置が提案され
ている（特開昭６３−２５０８２９号公報参照）。即
ち、本発明に係るボンディング装置と上記従来のボンデ
ィング装置とは、気体を噴出するノズルが配置されてい
る点で類似している。Conventionally, a bonding tool,
Au, Sn, Cu adhering to the bonding tool surface during bonding by the Au-Sn (tin) eutectic alloy method
A bonding apparatus having an abrasive for polishing and removing foreign substances made of a mixed substance of (copper), and an air nozzle for air blowing dust such as foreign substances and abrasives generated during polishing and removal. There are things. Further, there has been proposed a bonding apparatus in which a suction port for sucking dust blown by an air nozzle is provided by improving such a conventional bonding apparatus (see Japanese Patent Application Laid-Open No. 63-250829). . That is, the bonding apparatus according to the present invention is similar to the above-described conventional bonding apparatus in that a nozzle for ejecting gas is disposed.

【００２４】しかし、上記のボンディング装置における
エアーノズルは、前述のように、研磨材を用いてボンデ
ィングツール表面に付着した異物を研磨除去する際に発
生する付着異物や研磨材等の塵埃をエアーブローするた
めのものであるのに対して、本発明に係るボンディング
装置における気体を噴出するノズルは、ワイヤボンディ
ングの際に接着剤から放出されるアウトガスを吹き飛ば
すためのものである。従って、両者は全く異なる構成に
係るボンディング装置である。However, as described above, the air nozzle in the above-described bonding apparatus uses an air blow to remove foreign matter and dust such as abrasives generated when polishing and removing foreign matters attached to the surface of a bonding tool using an abrasive. On the other hand, the gas ejecting nozzle in the bonding apparatus according to the present invention blows out gas released from the adhesive during wire bonding. Therefore, both are bonding apparatuses according to completely different configurations.

【００２５】[0025]

【発明の実施の形態】以下、添付図面を参照しながら、
本発明の実施の形態を説明する。図１は本発明の一実施
形態に係るワイヤボンディング装置を示す概略斜視図で
あり、図２は図１のワイヤボンディング装置のエアーブ
ローノズルとキャピラリとを抜き出して図示した概略斜
視図であり、図３は図２のエアーブローノズル及びキャ
ピラリにリードフレームのダイパッド上にＡｇペースト
樹脂を介して装着された半導体チップを加えて図示した
概略断面図である。BRIEF DESCRIPTION OF THE DRAWINGS FIG.
An embodiment of the present invention will be described. FIG. 1 is a schematic perspective view showing a wire bonding apparatus according to an embodiment of the present invention, and FIG. 2 is a schematic perspective view showing an air blow nozzle and a capillary of the wire bonding apparatus shown in FIG. FIG. 3 is a schematic cross-sectional view illustrating a semiconductor chip mounted on a die pad of a lead frame via an Ag paste resin to the air blow nozzle and the capillary of FIG. 2.

【００２６】図１〜図３に示されるように、本実施形態
に係るワイヤボンディング装置は、リードフレームのダ
イパッド１０上にＡｇペースト樹脂１２を介して装着さ
れた半導体チップ１４に対するワイヤボンディングを行
うボンディングツールとしてのキャピラリ１６と、この
キャピラリ１６を用いて半導体チップ１４表面のＡｌ電
極とリードフレームのインナリード端子との間をＡｕワ
イヤによって結線した後、インナリード端子からキャピ
ラリ１６に延びるＡｕワイヤを途中から切断しその先端
を球状にするためのトーチ電極１８とを有している。As shown in FIGS. 1 to 3, the wire bonding apparatus according to the present embodiment performs wire bonding to a semiconductor chip 14 mounted on a die pad 10 of a lead frame via an Ag paste resin 12. After connecting a capillary 16 as a tool and an Au wire between the Al electrode on the surface of the semiconductor chip 14 and the inner lead terminal of the lead frame using the capillary 16, an Au wire extending from the inner lead terminal to the capillary 16 is connected in the middle. And a torch electrode 18 for making the tip spherical.

【００２７】また、キャピラリ１６の近傍には、この半
導体チップ１４に対するワイヤボンディングの際にＡｇ
ペースト樹脂１２から放出されるアウトガスを吹き飛ば
すためのドライエアーを噴出するためのエアーブローノ
ズル２０が配置されている。そして、このエアーブロー
ノズル２０には、エアーブローノズル２０からのドライ
エアーの噴出流量を制御するための流量制御手段とし
て、流量計２２が接続されている。In the vicinity of the capillary 16, Ag is used for wire bonding to the semiconductor chip 14.
An air blow nozzle 20 for jetting dry air for blowing out gas emitted from the paste resin 12 is provided. A flow meter 22 is connected to the air blow nozzle 20 as flow control means for controlling the flow rate of dry air jetted from the air blow nozzle 20.

【００２８】次に、図１〜図３に示すワイヤボンディン
グ装置の動作を説明する。先ず、従来の場合と同様に、
ＤＢプロセスにおいて、リードフレームのダイパッド１
０上に、接着剤としてのＡｇペースト樹脂１２を塗布し
た後、良品の半導体チップ１４をマウントする。こうし
て、リードフレームのダイパッド１０上にＡｇペースト
樹脂１２を介して良品の半導体チップ１４を装着する。Next, the operation of the wire bonding apparatus shown in FIGS. 1 to 3 will be described. First, as in the conventional case,
In the DB process, the die pad 1 of the lead frame
After applying an Ag paste resin 12 as an adhesive on the substrate 0, a good semiconductor chip 14 is mounted. Thus, the non-defective semiconductor chip 14 is mounted on the die pad 10 of the lead frame via the Ag paste resin 12.

【００２９】次いで、従来の場合と同様に、このダイパ
ッド１０上にＡｇペースト樹脂１２を介して良品の半導
体チップ１４を装着したリードフレームに対して、１８
０℃〜２４０℃の加熱処理を施し、Ａｇペースト樹脂１
２を硬化させるキュア処理を行う。Next, as in the conventional case, a lead frame having a non-defective semiconductor chip 14 mounted on the die pad 10 with an Ag paste resin 12 interposed therebetween
A heat treatment of 0 ° C. to 240 ° C. is performed, and the Ag paste resin 1
2 is cured.

【００３０】次いで、従来の場合とほぼ同様に、加熱圧
着法によるＷＢプロセスにおいて、ボンディングツール
としてのキャピラリ１６を用い、２５０℃〜３００℃に
加熱されたヒートブロック上にリードフレームを搭載し
た後、このリードフレームのダイパッド１０上に装着し
た半導体チップ１４表面上に形成されているＡｌ電極と
リードフレームのインナリード端子との間をＡｕワイヤ
によって結線する。Next, in substantially the same manner as in the conventional case, in the WB process by the heat compression bonding method, after using a capillary 16 as a bonding tool, a lead frame is mounted on a heat block heated to 250 to 300 ° C. An Au wire is connected between the Al electrode formed on the surface of the semiconductor chip 14 mounted on the die pad 10 of the lead frame and the inner lead terminal of the lead frame.

【００３１】そして、この加熱圧着法によるＷＢプロセ
スの際には、ＡｕワイヤとＡｌ電極との良好な接合特性
を確保するために２５０℃〜３００℃の加熱を行ってい
るため、リードフレーム５０のダイパッド５２と半導体
チップ６２とを装着しているＡｇペースト樹脂５４から
アウトガスが放出される。In the WB process by the thermocompression bonding method, heating at 250 ° C. to 300 ° C. is performed in order to secure good bonding characteristics between the Au wire and the Al electrode. Outgas is released from the Ag paste resin 54 on which the die pad 52 and the semiconductor chip 62 are mounted.

【００３２】しかし、本実施形態においては、従来の場
合と異なり、キャピラリ１６の近傍にエアーブローノズ
ル２０が配置されており、このエアーブローノズル２０
からドライエアーを噴出して、Ａｇペースト樹脂１２か
ら放出されるアウトガスを吹き飛ばす。なお、このとき
のドライエアーの噴出流量は、エアーブローノズル２０
に接続されている流量計２２によって制御する。However, in the present embodiment, unlike the conventional case, the air blow nozzle 20 is arranged near the capillary 16 and the air blow nozzle 20
, And blows out outgas emitted from the Ag paste resin 12. At this time, the flow rate of the dry air is determined by the air blow nozzle 20.
Is controlled by a flow meter 22 connected to the

【００３３】このため、Ａｇペースト樹脂１２から放出
されたアウトガスがキャピラリ１６の先端部又はＡｕワ
イヤを通す貫通口内部に付着し異物となって堆積するこ
とが抑制・低減され、Ａｕワイヤの良好な通りを阻害す
ることもなくなる。従って、キャピラリ１６に不良が発
生して、ＷＢプロセスにおける歩留りが低下したり、キ
ャピラリ１６の使用ライフが短縮したり、キャピラリ１
６の不良に起因して設備の稼働率が低下したりすること
も防止される。For this reason, the outgas released from the Ag paste resin 12 is suppressed or reduced from adhering to the tip of the capillary 16 or the inside of the through hole through which the Au wire passes and being deposited as a foreign substance, thereby reducing the quality of the Au wire. It will not obstruct the street. Therefore, a defect occurs in the capillary 16 and the yield in the WB process is reduced, the service life of the capillary 16 is shortened, and the capillary 1 is not used.
Also, it is possible to prevent the operation rate of the equipment from being reduced due to the defect of the sixth embodiment.

【００３４】なお、本発明者は、上記実施形態の効果を
確認するため、下記のような実験を行った。その結果
を、図４及び図５を用いて説明する。この実験において
は、ワイヤボンディング装置として、（株）新川製のＵ
ＴＣ−２００（＃１３０）を使用し、キャピラリ１６と
して、小ファインピッチＩＣ用キャピラリ（ガイザー１
５２０−１５−ＳＦ１）を使用した。The present inventor conducted the following experiment to confirm the effects of the above embodiment. The result will be described with reference to FIGS. In this experiment, as a wire bonding apparatus, a U.S.A. made by Shinkawa Co., Ltd. was used.
Using TC-200 (# 130), the capillary 16 for small fine pitch IC (Gaiser 1) was used as the capillary 16.
520-15-SF1) was used.

【００３５】先ず、ワイヤボンディング装置に新品のキ
ャピラリ１６を取付け、上記実施形態に従い、２５０℃
〜３００℃に加熱されたヒートブロック上にリードフレ
ームを搭載した後、このキャピラリ１６を用いて、リー
ドフレームのダイパッド１０上に装着した半導体チップ
１４表面上に形成されているＡｌ電極とリードフレーム
のインナリード端子との間をＡｕワイヤによって結線し
た。First, a new capillary 16 is attached to a wire bonding apparatus, and at 250 ° C. according to the above embodiment.
After mounting the lead frame on the heat block heated to 300 ° C., the capillary 16 is used to form an Al electrode formed on the surface of the semiconductor chip 14 mounted on the die pad 10 of the lead frame and an Al electrode formed on the surface of the lead frame. An Au wire was connected between the inner lead terminal.

【００３６】そして、この加熱圧着法によるＷＢプロセ
スの際に、キャピラリ１６の近傍に配置したエアーブロ
ーノズル２０からドライエアーを噴出して、Ａｇペース
ト樹脂１２から放出されるアウトガスを吹き飛ばした。
なお、このときのドライエアーの噴出流量は、３リット
ル／分とした。Then, during the WB process by the thermocompression bonding method, dry air was blown out from an air blow nozzle 20 arranged near the capillary 16 to blow out outgas released from the Ag paste resin 12.
At this time, the flow rate of the dry air jet was 3 liters / minute.

【００３７】そして、このようなワイヤボンディングを
１００万回繰り返した後、キャピラリ１６の先端部及び
Ａｕワイヤを通す貫通口内部を観察した。その結果を、
図４（ａ）に示す。また、このようなワイヤボンディン
グを１５０万回繰り返した後、キャピラリ１６の先端部
及びＡｕワイヤを通す貫通口内部を観察した結果を、図
５（ａ）に示す。After repeating such wire bonding one million times, the tip of the capillary 16 and the inside of the through hole through which the Au wire passes were observed. The result is
This is shown in FIG. FIG. 5 (a) shows the result of observing the tip of the capillary 16 and the inside of the through hole through which the Au wire passes after repeating such wire bonding 1.5 million times.

【００３８】なお、比較のために、エアーブローノズル
２０を設置していない従来の場合についても、同様にワ
イヤボンディングを１００万回及び１５０万回繰り返し
た後のキャピラリ１６の先端部及びＡｕワイヤを通す貫
通口内部を観察し、その結果をそれぞれ図４（ｂ）、図
５（ｂ）に示す。For comparison, in the conventional case where the air blow nozzle 20 was not installed, the tip end of the capillary 16 and the Au wire after repeating the wire bonding 1 million times and 1.5 million times in the same manner. The inside of the through hole to be passed is observed, and the results are shown in FIGS. 4 (b) and 5 (b), respectively.

【００３９】また、これらの図４（ａ）、（ｂ）及び図
５（ａ）、（ｂ）においては、上部にキャピラリ１６の
先端部及びその近傍の側面外観を示し、下部にキャピラ
リ１６の貫通口内部を先端側から見た状態を示してい
る。4 (a) and 4 (b) and FIGS. 5 (a) and 5 (b), the upper end of the capillary 16 and the side appearance in the vicinity thereof are shown at the upper part, and the lower part of the capillary 16 is shown at the lower part. It shows a state where the inside of the through hole is viewed from the tip side.

【００４０】図４（ａ）から明らかなように、上記実施
形態に従って、エアーブローノズル２０から３リットル
／分のドライエアーを噴出しつつ行うワイヤボンディン
グを１００万回繰り返しても、キャピラリ１６の先端部
及び貫通口内部の状態は新品のときの状態と殆ど変化が
生じていない。As is clear from FIG. 4A, according to the above-described embodiment, even if wire bonding performed while blowing out 3 L / min of dry air from the air blow nozzle 20 is repeated 1,000,000 times, the tip of the capillary 16 can be removed. The state of the part and the inside of the through-hole is hardly changed from the state of a new article.

【００４１】これに対して、エアーブローノズル２０を
設置していない従来の場合には、ワイヤボンディングを
１００万回繰り返すと、図４（ｂ）のＡ部に示されるよ
うに、キャピラリ１６の先端部及びその近傍に異物の付
着が観察され、また、図中のＢ部に示されるように、小
さな異物による汚染が観察された。更に、図中のＣ部に
示されるように、キャピラリ１６の貫通口内部の一部に
も、異物の付着が観察された。On the other hand, in the conventional case in which the air blow nozzle 20 is not provided, when the wire bonding is repeated 1 million times, as shown in a part A of FIG. Adhesion of foreign matter was observed at and around the portion, and contamination by small foreign matter was observed as shown at B in the figure. Further, as shown in the part C in the figure, the adhesion of foreign matter was also observed on a part of the inside of the through hole of the capillary 16.

【００４２】また、上記実施形態に従って、エアーブロ
ーノズル２０から３リットル／分のドライエアーを噴出
しつつ行うワイヤボンディングを１５０万回繰り返した
場合には、図５（ａ）のＤ部に示されるように、キャピ
ラリ１６の先端部の近傍に小さな異物による汚染が観察
された。この小さな異物による汚染は、従来の方法によ
りワイヤボンディングを１００万回繰り返した場合の上
記図４（ｂ）のＢ部に示されるものと同程度である。ま
た、上記図４（ｂ）のＡ部に示されるような異物の付着
は観察されなかった。また、図５（ａ）のＥ部に示され
るように、キャピラリ１６の貫通口内部の一部にも異物
の付着が僅かに観察された。但し、この異物の付着は、
上記図４（ｂ）のＣ部に示される異物の付着よりも小さ
いものであった。Further, according to the above-described embodiment, when wire bonding performed while blowing out 3 liters / minute of dry air from the air blow nozzle 20 is repeated 1.5 million times, it is shown in a part D of FIG. 5A. Thus, contamination by a small foreign matter was observed near the tip of the capillary 16. The contamination due to the small foreign matter is almost the same as that shown in the portion B in FIG. 4B when the wire bonding is repeated 1 million times by the conventional method. In addition, the adhesion of the foreign matter as shown in the part A of FIG. 4B was not observed. Further, as shown in part E of FIG. 5 (a), adhesion of foreign matter was slightly observed on a part of the inside of the through hole of the capillary 16. However, the adhesion of this foreign matter
It was smaller than the adhesion of the foreign matter shown in part C of FIG. 4 (b).

【００４３】これに対して、エアーブローノズル２０を
設置していない従来の場合には、ワイヤボンディングを
１５０万回繰り返すと、図５（ｂ）のＦ部に示されるよ
うに、キャピラリ１６の先端部及びその近傍に大きな異
物の付着が観察された。この大きな異物の付着は、上記
図４（ｂ）のＡ部に示されるものよりも遙に大きいもの
であった。また、図５（ｂ）のＧ部に示されるように、
小さな異物による汚染が観察されたが、その汚染の程度
及び広がりは、上記図４（ｂ）のＢ部又は上記図５
（ａ）のＤ部に示される場合よりも酷くなっていた。更
に、図５（ｂ）のＨ部に示されるように、キャピラリ１
６の貫通口内部の全周囲に、異物の付着が観察された。On the other hand, in the conventional case in which the air blow nozzle 20 is not provided, when the wire bonding is repeated 1.5 million times, the tip of the capillary 16 becomes as shown in the F section of FIG. Large foreign matter adhered to the portion and its vicinity. The adhesion of the large foreign matter was much larger than that shown in the portion A in FIG. 4B. Also, as shown in the G section of FIG.
Although contamination by a small foreign substance was observed, the degree and extent of the contamination were determined by the portion B in FIG.
It was worse than the case shown in part D of (a). Further, as shown in the H section of FIG.
The adhesion of foreign matter was observed all around the inside of the through hole of No. 6.

【００４４】以上のように本実施形態によれば、ワイヤ
ボンディング装置のキャピラリ１６の近傍にエアーブロ
ーノズル２０が配置され、このエアーブローノズル２０
からドライエアーを噴出し、加熱圧着法によるＷＢプロ
セスにおいてＡｇペースト樹脂１２から放出されるアウ
トガスを吹き飛ばすことにより、Ａｇペースト樹脂１２
から放出されたアウトガスがキャピラリ１６の先端部又
はＡｕワイヤを通す貫通口内部に付着し異物となって堆
積することを抑制・低減することができる。このため、
キャピラリ１６の不良の発生を防止して、Ａｕワイヤの
良好な通りを確保することができる。従って、ＷＢプロ
セスにおける歩留りを向上させ、キャピラリ１６の使用
ライフを長寿命化し、設備の稼働率を向上させることが
可能になる。As described above, according to the present embodiment, the air blow nozzle 20 is disposed near the capillary 16 of the wire bonding apparatus.
From the Ag paste resin 12 in the WB process by the heat and pressure bonding method to blow out the outgas released from the Ag paste resin 12.
It is possible to suppress and reduce the amount of outgas released from the inside of the capillary 16 or the inside of the through-hole through which the Au wire passes and which is deposited as foreign matter. For this reason,
The occurrence of defects in the capillary 16 can be prevented, and a good passage of the Au wire can be ensured. Therefore, it is possible to improve the yield in the WB process, extend the service life of the capillary 16, and improve the operation rate of the equipment.

【００４５】なお、上記本実施形態においては、リード
フレームのダイパッド１０上にＡｇペースト樹脂１２を
介して装着した半導体チップ１６に対するＷＢプロセス
について述べてきたが、リードフレームの代わりに、金
属基板又はセラミック基板からなるパッケージを使用す
る場合にも、本発明は同様に適用することが可能であ
る。In this embodiment, the WB process for the semiconductor chip 16 mounted on the die pad 10 of the lead frame via the Ag paste resin 12 has been described. However, instead of the lead frame, a metal substrate or a ceramic substrate is used. The present invention can be similarly applied to a case where a package including a substrate is used.

【００４６】また、加熱圧着法によるＷＢプロセスの場
合について述べてきたが、加熱圧着法に限定されず、例
えば超音波併用加熱圧着法などであって、熱を利用する
ワイヤボンディングにおいて接着剤からアウトガスが放
出される場合であれば、本発明を有効に適用することが
可能である。Although the case of the WB process by the thermocompression bonding method has been described, the invention is not limited to the thermocompression bonding method. For example, the thermocompression bonding method using ultrasonic waves may be used. Is released, the present invention can be effectively applied.

【００４７】[0047]

【発明の効果】以上、詳細に説明した通り、本発明に係
るボンディング装置によれば、次のような効果を奏する
ことができる。即ち、請求項１に係るボンディング装置
によれば、気体を噴出するノズルが配置され、ワイヤボ
ンディングの際に接着剤から放出されるアウトガスを吹
き飛ばすようになっていることにより、熱を利用するＷ
Ｂプロセスにおいて接着剤から放出されるアウトガスが
ボンディングツールの先端部又は貫通口内部に付着する
ことを抑制・低減することができるため、ボンディング
ツールの不良の発生を防止して、金属細線の良好な通り
を確保することができる。従って、ＷＢプロセスにおけ
る歩留りを向上させ、キャピラリの使用ライフを長寿命
化し、設備の稼働率を向上させることが可能になる。As described above, according to the bonding apparatus of the present invention, the following effects can be obtained. In other words, according to the bonding apparatus of the first aspect, since the nozzle for ejecting the gas is arranged to blow out the outgas released from the adhesive at the time of wire bonding, W which utilizes heat is used.
Since the outgas released from the adhesive in the B process can be suppressed or reduced from adhering to the front end portion or the inside of the through hole of the bonding tool, it is possible to prevent the occurrence of a defect of the bonding tool and improve the quality of the thin metal wire. A street can be secured. Therefore, it is possible to improve the yield in the WB process, prolong the service life of the capillary, and improve the operation rate of the equipment.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の一実施形態に係るワイヤボンディング
装置を示す斜視図である。FIG. 1 is a perspective view showing a wire bonding apparatus according to an embodiment of the present invention.

【図２】図１のワイヤボンディング装置のエアーブロー
ノズルとキャピラリとを抜き出して図示した概略斜視図
である。FIG. 2 is a schematic perspective view illustrating an air blow nozzle and a capillary of the wire bonding apparatus of FIG.

【図３】図２のエアーブローノズル及びキャピラリにリ
ードフレームのダイパッド上にＡｇペースト樹脂を介し
て装着された半導体チップを加えて図示した概略断面図
である。3 is a schematic cross-sectional view illustrating a semiconductor chip mounted on a die pad of a lead frame via an Ag paste resin to the air blow nozzle and the capillary of FIG. 2;

【図４】（ａ）は本発明の一実施形態に従って行った実
験結果を示すものであって、ワイヤボンディングを１０
０万回繰り返した後のキャピラリの先端部及び貫通口内
部の状態を模式的に示す概略図であり、（ｂ）は比較の
ために従来の場合を示す概略図である。FIG. 4 (a) shows the results of an experiment performed in accordance with one embodiment of the present invention, in which wire bonding was performed for 10 minutes.
It is the schematic which shows typically the state of the front-end | tip part of a capillary, and the inside of a through-hole after repeating 0,000 times, (b) is the schematic which shows the conventional case for a comparison.

【図５】（ａ）は本発明の一実施形態に従って行った実
験結果を示すものであって、ワイヤボンディングを１５
０万回繰り返した後のキャピラリの先端部及び貫通口内
部の状態を模式的に示す概略図であり、（ｂ）は比較の
ために従来の場合を示す概略図である。FIG. 5 (a) shows the results of an experiment performed according to an embodiment of the present invention, wherein
It is the schematic which shows typically the state of the front-end | tip part of a capillary, and the inside of a through-hole after repeating 0,000 times, (b) is the schematic which shows the conventional case for a comparison.

【図６】従来の半導体装置の組立工程におけるＤＢプロ
セスを説明するための概略斜視図である。FIG. 6 is a schematic perspective view for explaining a DB process in an assembly process of a conventional semiconductor device.

【図７】従来のＡｇペースト樹脂のキュア処理を説明す
るための概略断面図（その１）である。FIG. 7 is a schematic cross-sectional view (part 1) for explaining a conventional curing treatment of an Ag paste resin.

【図８】従来のＡｇペースト樹脂のキュア処理を説明す
るための概略断面図（その２）である。FIG. 8 is a schematic sectional view (part 2) for explaining a conventional curing treatment of an Ag paste resin.

【図９】従来の半導体装置の組立工程におけるＷＢプロ
セスを説明するための概略斜視図である。FIG. 9 is a schematic perspective view illustrating a WB process in a conventional semiconductor device assembling process.

【図１０】（ａ）〜（ｇ）はそれぞれ図９に示すＷＢプ
ロセスの具体的な手順を示す概略断面図である。10A to 10G are schematic cross-sectional views each showing a specific procedure of the WB process shown in FIG.

【符号の説明】[Explanation of symbols]

１０……ダイパッド、１２……Ａｇペースト樹脂、１４
……半導体チップ、１６……キャピラリ、１８……トー
チ電極、２０……エアーブローノズル、２２……流量
計、５０……リードフレーム、５２……ダイパッド、５
４……Ａｇペースト樹脂、５６……樹脂用容器、５８…
…樹脂用ノズル、６０……ウェーハ、６２……半導体チ
ップ、６４……コレット、７０……オーブン、７２……
ヒータ、７４……ヒートプレート、７６……オーブン、
７８……フレームマガジン、８０……ヒータ、８２、８
４……排気口、９０……キャピラリ、９２……Ａｌ電
極、９４……インナリード、９６……Ａｕワイヤ、９８
……トーチ電極。10: die pad, 12: Ag paste resin, 14
... Semiconductor chip, 16 capillary, 18 torch electrode, 20 air blow nozzle, 22 flow meter, 50 lead frame, 52 die pad, 5
4 ... Ag paste resin, 56 ... Resin container, 58 ...
... Nozzle for resin, 60 ... Wafer, 62 ... Semiconductor chip, 64 ... Collet, 70 ... Oven, 72 ...
Heater, 74, heat plate, 76, oven,
78: Frame magazine, 80: Heater, 82, 8
4 ... exhaust port, 90 ... capillary, 92 ... Al electrode, 94 ... inner lead, 96 ... Au wire, 98
.... Torch electrode.

Claims (3)

【特許請求の範囲】[Claims] 【請求項１】 ボンディングツールを用いて、リードフ
レーム又はパッケージのダイパッド上に接着剤を介して
装着された半導体チップと前記リードフレーム又は前記
パッケージのリード端子とを金属細線によって接続する
ボンディング装置であって、 前記接着剤から放出されるアウトガスを吹き飛ばすため
の気体を噴出するノズルが配置されていることを特徴と
するボンディング装置。1. A bonding apparatus for connecting a semiconductor chip mounted on a die pad of a lead frame or a package via an adhesive and a lead terminal of the lead frame or the package by a thin metal wire using a bonding tool. And a nozzle for ejecting a gas for blowing out outgas emitted from the adhesive. 【請求項２】 請求項１記載のボンディング装置におい
て、 前記ノズルから噴出される気体が、ドライエアーである
ことを特徴とするボンディング装置。2. The bonding apparatus according to claim 1, wherein the gas ejected from the nozzle is dry air. 【請求項３】 請求項１記載のボンディング装置におい
て、 前記ノズルに、前記ノズルから噴出される気体の流量を
制御する流量制御手段が接続されていることを特徴とす
るボンディング装置。3. The bonding apparatus according to claim 1, wherein flow rate control means for controlling a flow rate of gas ejected from the nozzle is connected to the nozzle.
JP28705299A 1999-10-07 1999-10-07 Bonding device Pending JP2001110839A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28705299A JP2001110839A (en) 1999-10-07 1999-10-07 Bonding device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28705299A JP2001110839A (en) 1999-10-07 1999-10-07 Bonding device

Publications (1)

Publication Number Publication Date
JP2001110839A true JP2001110839A (en) 2001-04-20

Family

ID=17712440

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28705299A Pending JP2001110839A (en) 1999-10-07 1999-10-07 Bonding device

Country Status (1)

Country Link
JP (1) JP2001110839A (en)

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