JPH08172105A - Manufacture of semiconductor device and manufacturing device - Google Patents

Abstract

PURPOSE: To provide a manufacturing method for a semiconductor device by which a whole surface can be stably stuck without generating a warp and damage in a semiconductor chip in a die bond automatic machine for die- bonding a semiconductor chip on the die bed part of a lead frame and its die bond method. CONSTITUTION: In the state that a semiconductor chip 11 vacuum-sucked by a collet 12 is brought into contact with a die bond agent 21 applied onto the die bed of a lead frame 14, after the supply of vacuum is stopped, high-pressure air is supplied into the chamber 12b of the collet 12 from a dispenser for high- pressure air supply. Thereby, nearly uniform pressure is given in the whole surface of the chip 11 without being brought into contact, and the whole surface of the chip 11 is stuck to the die bond agent 21.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to, for example, a method of manufacturing a semiconductor device and a manufacturing apparatus thereof, and is particularly used when a semiconductor chip is die-bonded to a lead frame or a package case.

[0002]

2. Description of the Related Art Conventionally, the work of die-bonding a semiconductor chip onto a lead frame has been automated. That is, in a general die bonding process, for example, as shown in FIG.
Alternatively, as shown in FIG. 8, semiconductor chips 1 individually cut out from a semiconductor wafer by a dicing process are vacuum-sucked and picked up by a collet 2 (pickup), and the chips 1 are attached to a die bed portion 3 of a lead frame.
The semiconductor chip 1 is brought into close contact with the die bonding agent 4 of the die bed portion 3 by being transferred (pressed) by the collet 2 onto the die bonding agent 4 applied to the.

However, in the above-mentioned method, when the semiconductor chip 1 is brought into close contact with the die bonding agent 4, a pressing force is directly applied to the end portion of the semiconductor chip 1. For this reason,
There were the following problems.

For example, as the size of the semiconductor chip 1 becomes larger, the pressing force applied to the end of the chip 1 also increases, and the pressure distribution is distributed only at the end of the chip 1, and
Since the contact pressure is applied, the chip 1 is likely to be damaged such as cracked or chipped.

Further, since the pressure distribution also varies depending on the inclination of the collet 2 and the like, it is necessary to strictly perform the initial setting of the machine, especially when die bonding is performed by an automatic machine. Further, a warp is likely to occur in proportion to the reduction in thickness of the semiconductor chip 1, and the thickness of the die bonding agent 4 becomes uneven. Also,
The contact area between the chip 1 and the die bonding agent 4 may be small, and the adhesion and the conductivity of heat generated by the chip 1 may be reduced.

[0006]

As described above, in the past, the size and thickness of the semiconductor chip have been remarkably increased, and when the size of the semiconductor chip increases, a pressing force proportional to its area is required. The pressure required for die-bonding increases with the increase in size, while thinning tends to cause damage such as warpage or cracks and chips, making it even more difficult to directly apply large pressure in the future. That was a concern.

Therefore, according to the present invention, a substantially uniform pressure can be applied to the entire surface of the semiconductor element by non-contact, and the entire surface of the semiconductor element can be stably adhered without causing warping or damage. An object of the present invention is to provide a manufacturing method and a manufacturing apparatus.

[0008]

In order to achieve the above object, in a semiconductor device manufacturing apparatus of the present invention, an opening surface is formed on one end surface for adsorbing a semiconductor element. A collet having a space portion, a suction means for supplying a vacuum pressure to the space portion of the collet to adsorb the semiconductor element to the opening surface of the collet, and the semiconductor element attached to the opening surface of the collet. After contacting the adhesive applied on the substrate and stopping the supply of the vacuum pressure by the suction means in this state, high pressure air is supplied to the space portion of the collet to press the semiconductor element in a non-contact manner. It is composed of a pressing means.

Further, in the method for manufacturing a semiconductor device of the present invention, a vacuum pressure is supplied to the space portion of the collet having the space portion having the opening surface, and the semiconductor element is adsorbed to the opening surface of the collet. Then, the semiconductor element adsorbed on the opening surface of the collet is brought into contact with the adhesive applied on the mounting substrate, and in this state, after the supply of the vacuum pressure is stopped, high pressure air is supplied to the space portion of the collet. Is supplied to press the semiconductor element in a non-contact manner.

[0010]

According to the present invention, since the large pressure can be applied to the entire surface of the semiconductor element in a non-contact manner by the above means, it is possible to prevent the semiconductor element from being damaged or warped. It is a thing.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows a schematic configuration of an automatic die bond machine according to the present invention. This die bond automatic machine is, for example, a collet 12 that picks up semiconductor chips 11 individually cut from a semiconductor wafer by a dicing process by vacuum suction, and this collet 1.
2. The semiconductor chip 11 picked up in 2 is transferred onto the die bed portion of the lead frame (mounting substrate) 14 conveyed on the guide rail 13, and is transferred to the collet 12 via the die bond head 15. From a vacuum pressure supply dispenser (supply means) 16 for supplying a vacuum pressure for pickup, and a high pressure air supply dispenser (pressurization means) 17 for supplying high pressure air for pressurization to the collet 12 at the time of die bonding. It is configured.

Dispenser 17 for supplying the high pressure air
Has a regulator, an air conditioner, a time switch (all not shown), and has a pipe 17a for connection with the collet 12.

The dispenser 16 for supplying the vacuum pressure is
For example, it has a regulator, a vacuum adjuster, a time switch (all not shown) and the like, and is configured to have a pipe 16a for connection with the collet 12.

The die bond head 15 controls, for example, the position of the collet 12 in the X, Y and Z directions, and the collet 12 and the pipes 16a,
It has a switching valve (not shown) for connection with 17a.

That is, in the case of the die bond automatic machine shown in this embodiment, the pipe 16 of each of the dispensers 16 and 17 is
The a and 17a are connected to the collet 12 via a switching valve provided in the die bond head 15.

The structure of the collet 12 will be described later. Further, a die bond agent coating device is arranged along the guide rail 13 immediately before the die bond automatic machine.

This die bond agent application device is for applying a die bond agent (adhesive) 21 for fixing the semiconductor chip 11 to be die-bonded on the lead frame 14 onto the die bed portion. Tank 22 for storing the die-bonding agent 21 in the shape of a tube, a dispenser 23 for supplying air for delivering a fixed amount of die-bonding agent 21 from inside the tank 22, and the die-bonding agent 21 delivered from the tank 22 for the lead frame 14 It is configured to have a coating nozzle 24 and the like for coating on the die bed part.

As the die-bonding agent 21, for example, a resin-based material such as epoxy or polyimide, or silver glass in which silver or glass particles are mixed in a solvent is used. Further, it is not limited to the paste-like one, and a film-like die-bonding agent obtained by preforming resin, solder or the like on the die-bed portion in advance can also be used.

FIG. 2 shows a schematic structure of the collet 12 in the above-mentioned automatic die bonding machine. The collet 12 is formed by grinding a metal block such as stainless steel, and its cross section is formed in an inverted T shape. Further, the lower surface of the collet 12 has a semiconductor chip 11 to be picked up.
It is almost the same size as. Inside the pipes 16a, 17 of the dispensers 16, 17 are provided.
A cylindrical through hole 12a connected to a is provided, and a chamber (space portion) 12b having, for example, a quadrangular pyramid shape connected to the through hole 12a is formed.

The diameter of the through hole 12a is formed in proportion to the pressure of the high pressure air for pressurizing the semiconductor chip 11. The chamber 1
2b is provided so as to open the lower surface of the collet 12. The size of the opening formed by the chamber 12a is slightly smaller than the size of the semiconductor chip 11.

In the collet 12 having such a structure, the vacuum pressure is supplied from the vacuum pressure supply dispenser 16 into the chamber 12b through the through hole 12a, so that the semiconductor chip 11 is secured by the lower surface thereof. It is vacuum-adsorbed. As the suction force at the time of pickup,
A suction force corresponding to the weight of the semiconductor chip 11 to be picked up is required, and the vacuum pressure is set so that the semiconductor chip 11 can be securely sucked.

Further, the dispenser 17 for supplying the high pressure air is introduced into the chamber 12b through the through hole 12a.
By supplying the high-pressure air from the above, the pressing force is applied to almost the entire surface of the semiconductor chip 11 transferred onto the die bed portion in a non-contact manner. As the pressing force at the time of die bonding, a pressing force corresponding to the area of the semiconductor chip 11 to be die-bonded is required, and high pressure air is applied so that an arbitrary die-bonding thickness can be realized depending on conditions such as viscosity of the die-bonding agent 21. The pressure is set.

For example, an arbitrary chip size of 15 mm
The corner of the die bond agent 21 has a viscosity of 20 to 100 Pa.
s, the pressure of the high-pressure air is set to about 0.6 MPa when the die bond thickness of 30 μm can be realized.

In this case, since the pressing force applied per unit area of the semiconductor chip 11 is always constant, it is not necessary to change the setting for each chip 11. FIG. 3 shows a die-bonding method using the above-mentioned die-bonding automatic machine.

In the die bonding process, first,
A fixed amount of die bond agent 21 is applied onto the die bed portion of the lead frame 14 by a die bond agent application device. Then, the lead frame 14 is conveyed on the guide rails 13 and guided directly below the die bond automatic machine.

On the other hand, in the die bond automatic machine, the semiconductor chip 11 picked up by the collet 12 is transferred onto the die bed portion of the lead frame 14 in synchronization with the transfer operation of the lead frame 14.

In this case, the semiconductor chip 11 corresponds to one of the chips individually cut out from the semiconductor wafer by the dicing process in the preceding stage, and the collet 12 is controlled by the control of the die bond head 15, and the vacuum pressure is supplied in this state. A vacuum pressure is supplied from the dispenser 16 for vacuum into the through hole 12a of the collet 12 and the chamber 12b via the pipe 16a, so that the lower surface of the collet 12 is adsorbed.

The semiconductor chip 11 which is vacuum-sucked on the lower surface of the collet 12 is picked up by the control of the die bond head 15 and is moved onto the die bed portion of the lead frame 14 which has been conveyed on the guide rail 13. (FIG. 3 (a)).

Further, the position of the collet 12 is controlled by the die bond head 15, and the semiconductor chip 11 vacuum-adsorbed on the lower surface of the collet 12 comes into contact with the die bonding agent 21 applied on the die bed portion of the lead frame 14. It is moved to the position (Fig. 3 (b)).

Subsequently, the lead frame 14 of the semiconductor chip 11 which is vacuum-adsorbed on the lower surface of the collet 12.
The die bond to is performed. In this case, first, after the vacuum pressure supply from the vacuum pressure supply dispenser 16 is stopped, the valve in the die bond head 15 is switched, and in this state, the pipe 17a is connected from the high pressure air supply dispenser 17 to the pipe 17a. High-pressure air is supplied to the through hole 12a of the collet 12 and the chamber 12b via the. As a result, a substantially uniform pressing force is applied to the entire surface of the semiconductor chip 11 adsorbed on the lower surface of the collet 12 in a non-contact manner,
The entire surface of the semiconductor chip 11 is brought into close contact with the die bonding agent 21 (FIG. 3C).

Thereafter, the supply of high pressure air from the high pressure air supply dispenser 17 is stopped and the collet 12 is
Is moved from above the guide rail 13 to complete one die bonding operation in the die bonding process. Then, the die-bonded lead frame 14 of the semiconductor chip 11 is transported on the guide rail 13 and supplied to the next stage, for example, the wire bonding step.

The collet 12 moved from the guide rail 13 picks up the semiconductor chip 11 that is die-bonded to the lead frame 14 until the next lead frame 14 is conveyed to directly below the die bond automatic machine. To start.

As described above, a large pressure can be applied to the entire surface of the semiconductor chip without contact. That is, high pressure air is supplied to the semiconductor chip transferred on the die bonding agent applied on the die bed portion of the lead frame. This allows
It becomes possible to apply a substantially uniform pressure to the entire surface of the chip without contacting the semiconductor chip. Therefore, since the pressure distribution on the semiconductor chip at the time of die bonding can be eliminated, even if the chip is large and thin, it is possible to stably adhere the entire surface of the chip without warping. .

Further, it becomes possible to obtain a uniform die bond thickness, and it is possible to solve the problem that the adhesiveness and the heat conductivity generated by the chip are lowered due to the non-uniform thickness of the die bonding agent.

Moreover, since the pressure is applied in a non-contact manner, there is no fear of damaging the chip such as chipping or cracking due to the inclination of the collet. In particular, when a die-bonding agent having a high elastic modulus at the time of heat, for example, a film-like die-bonding agent is used, it becomes possible to bring the entire surface of the semiconductor chip into good contact, which is effective.

In the above embodiment, the collet formed so as to supply the high pressure air through the through hole has been described as an example, but the present invention is not limited to this and, for example, as shown in FIG. A flow path 12c that is more connected to the chamber 12b is formed, and without passing through the through hole 12a,
It is also possible to directly supply the high pressure air into the chamber 12b.

In this case, the switching valve provided in the die bond head becomes unnecessary, and the conventional device can be used as it is with almost no improvement. Further, it is also effective to provide a skirt made of a heat-resistant resin having a low elastic modulus on the lower surface of the collet.

Further, the collet is not limited to one in which a quadrangular pyramid-shaped chamber is formed, and for example, as shown in FIG. 5, a quadrangular prism-shaped chamber 12d connected to a cylindrical through hole 12a is formed. Can also be

In this case as well, as in the above, the collet 1
It is possible to supply the high-pressure air into the chamber 12d directly from the side surface of 2 and to provide a skirt.

In each of the above embodiments, the chamber (opening surface) is formed to be smaller than the outer shape of the semiconductor chip. However, as shown in FIG. 6, for example, a chamber (opening surface) connected to a cylindrical through hole 12a ( The space portion) may be formed by a combination of a quadrangular pyramid-shaped space portion 12b having a diameter smaller than the outer shape of the semiconductor chip 11 and a rectangular column-shaped chamber 12d slightly larger than the outer shape of the semiconductor chip 11.

The mounting substrate for die-bonding the semiconductor chip may be a lead frame, a package case, or a circuit board. Of course, various modifications can be made without departing from the scope of the invention.

[0042]

As described above in detail, according to the present invention, a substantially uniform pressure can be applied to the entire surface of the semiconductor element by non-contact, and the entire surface of the semiconductor element can be stabilized without warping or damage. A manufacturing method and a manufacturing apparatus of a semiconductor device that can be brought into close contact can be provided.

[Brief description of drawings]

FIG. 1 is a configuration diagram schematically showing an automatic die bond machine according to an embodiment of the present invention.

FIG. 2 is a sectional view showing a schematic structure of a collet used in an automatic die bonding machine.

FIG. 3 is a diagram similarly shown for explaining a die bonding operation by an automatic die bonding machine.

FIG. 4 is a sectional view showing another configuration example of the collet used in the die bond automatic machine.

FIG. 5 is a sectional view showing another configuration example of a collet used in an automatic die bonding machine.

FIG. 6 is a sectional view showing another configuration example of a collet used in an automatic die bonding machine.

FIG. 7 is a cross-sectional view for explaining an outline of a die bonding operation in order to explain a conventional technique and its problems.

FIG. 8 is a sectional view similarly shown for explaining the outline of the die bonding operation.

[Explanation of symbols]

11 ... Semiconductor chip, 12 ... Collet, 12a ... Through hole, 12b, 12d ... Chamber, 13 ... Guide rail,
14 ... Lead frame, 15 ... Die bond head, 16
... vacuum pressure supply dispenser, 17 ... high pressure air supply dispenser, 21 ... die bonding agent.

Claims (3)

[Claims] 1. A collet formed on one end surface and having a space portion for adsorbing a semiconductor element, the space portion having an opening surface, and a vacuum pressure is supplied to the space portion of the collet so that the collet opening surface is exposed. Adsorption means for adsorbing the semiconductor element, and contacting the semiconductor element adsorbed on the opening surface of the collet with the adhesive applied on the mounting substrate, in this state,
A manufacturing method of a semiconductor device, comprising: pressurizing means for supplying high-pressure air to the space portion of the collet to stop the semiconductor element from being non-contacted after stopping the supply of the vacuum pressure by the suction means. apparatus. 2. An apparatus for manufacturing a semiconductor device according to claim 1, wherein the opening surface is formed smaller than the outer shape of the semiconductor element. 3. A collet having a space having an opening surface, a vacuum pressure is supplied to the space to adsorb a semiconductor element to the opening surface of the collet, and the semiconductor adsorbed to the opening surface of the collet. The element is brought into contact with the adhesive applied on the mounting board, and in this state,
After the supply of the vacuum pressure is stopped, high pressure air is supplied to the space portion of the collet to press the semiconductor element in a non-contact manner.