JP2001085295A - Device and method for processing substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a device for processing a substrate in which mist sprayed when a processing liquid is shaked off can be effectively discharged. SOLUTION: This device includes a wafer holding mechanism 2 for rotating a substrate W processed by a processing liquid to drip off the processing liquid, a cap 12 for surrounding the substrate W held by the wafer holding mechanism 2 and receiving the sprayed processing liquid, and a discharging passage 11 for discharging the processing liquid from the cup 12. The cup 12 has a mist holding portion 16 for generating vortex and catching the mist-like processing liquid sprayed outward in the radial direction of the substrate W by the vortex.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing in which a substrate to be processed such as a semiconductor wafer or an LCD substrate is subjected to liquid processing such as development and cleaning, and then the substrate to be processed is rotated at high speed to shake off and dry. The present invention relates to an apparatus and a substrate processing method.

[0002]

2. Description of the Related Art As is well known, in a manufacturing process of a semiconductor device, a liquid crystal display (LCD) or the like, a desired circuit is formed by a photolithography technique. In this photolithography technology, first,
A resist solution is applied to the surface of the substrate to be processed, and is exposed to a predetermined pattern. Next, after applying a developing solution to the substrate to be processed and performing a developing process, the developing solution is washed away with a cleaning solution, and a series of processes is completed.

In such a processing step, in a developing apparatus, in order to clean the substrate after the development processing, the substrate to be processed is sucked and held on a spin chuck, and a cleaning liquid is supplied to the surface thereof. Drive in rotation. Then, after the cleaning liquid is stopped, the remaining developing liquid and cleaning liquid are shaken off by rotating the wafer at a high speed to dry the substrate.

In such a washing / drying step, a mist of the washing liquid is scattered from the peripheral portion of the substrate. For this reason,
It is necessary to effectively discharge the mist from around the substrate. In a conventional apparatus, a down flow of a clean room is incorporated in a cup for rotating the substrate at a high speed,
By using this down flow, the mist that has scattered is forcibly discharged out of the cup. That is, in this case, the scattered mist is guided downward by the downflow, and is forcibly exhausted to the outside through an outlet provided on the bottom surface of the cup.

[0005]

However, the conventional configuration has the following problems to be solved.

That is, when the substrate to be processed is rotated at a high speed, the mist scattered from the periphery of the substrate to be processed rebounds on the inner surface of the cup and scatters upward or toward the wafer.
May flow out of cup. Therefore, there is a possibility that the mist cannot be effectively discharged from the discharge port provided on the bottom surface of the cup.

In the conventional apparatus, the vortex generated by the high-speed rotation and the downflow introduced into the cup may interfere with each other to generate a turbulent flow in the cup. May not be ideally controlled. As a result, the mist scattered during the rotation may stay without being effectively discharged out of the cup, and may adhere to the substrate after the rotation is completed.

SUMMARY OF THE INVENTION The present invention has been made in view of such circumstances, and provides a substrate processing apparatus for shaking off and drying a substrate after liquid processing, which can effectively discharge mist scattered at the time of shaking off. With the goal.

[0009]

In order to achieve the above object, according to a main aspect of the present invention, a substrate rotation driving mechanism for rotating a substrate processed by a processing liquid and shaking the processing liquid, and the substrate rotation driving mechanism, Surrounding the substrate held by the rotating mechanism, has a container for receiving the shaken processing liquid, and a discharge path for discharging the processing liquid from this container, the container,
A substrate processing apparatus is provided, wherein an airflow retention portion is provided for generating a vortex and trapping a mist-like processing liquid scattered outward in the radial direction of the substrate by the vortex in a container.

[0010] According to such a configuration, a vortex is generated in the airflow stagnation portion of the container, and the mist of the processing liquid can be captured by the vortex, so that the mist is prevented from flowing out of the container toward the wafer. it can.

Here, the airflow stagnation portion is bent downward in a direction from the upper end of the first vertical wall constituting the outer wall of the container to the wafer and extended downward. Dome part, extending downward from this dome part,
It is preferable that the lower end be made up of a second vertical wall positioned higher than the substrate. In this case, it is preferable that the apparatus has a vertical drive mechanism for raising and lowering the container and a control means for controlling the height of the lower end of the second vertical wall to stabilize the airflow state.

According to such a configuration, the downflow is rectified by the second vertical wall and the vortex is prevented from joining the downflow. Further, according to such a configuration, since the airflow state can be controlled by moving the container up and down, there is an effect that the mist can be discharged more favorably.

According to one embodiment, an uneven portion is formed on the inner surface of the airflow stagnation portion. According to such a configuration, it is possible to promote the formation of mist in the stagnation portion and to control the vortex.

Further, according to another embodiment, a discharge path for discharging the received processing liquid is provided at the bottom of the container, and the container is provided at an intermediate portion in the height direction of the container. An apparatus is provided in which a receiving portion for discharging a processing liquid that runs down is formed. A substrate processing apparatus, characterized in that:

According to a different main aspect of the present invention, a substrate rotation drive mechanism for rotating a substrate processed by a processing liquid and shaking the processing liquid, and a peripheral portion surrounding the substrate held by the substrate rotation mechanism, A substrate processing method using a substrate processing apparatus having a container extending near a peripheral portion of the substrate and a discharge mechanism for discharging the processing liquid captured in the container, wherein the processing liquid of the discharge mechanism A substrate processing method is provided, comprising the step of raising and lowering the container based on a discharge pressure and / or a discharge flow rate and controlling a gap between the substrate and a container edge.

In addition, according to such a configuration, since the airflow state can be controlled by moving the container up and down, the mist can be discharged in a more controllable state.

[0017]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic configuration diagram showing one embodiment of a developing apparatus to which the present invention is applied.

The development processing apparatus includes a base 1, a wafer holding mechanism 2 attached to the base 1, and holding a wafer W (a wafer coated with a resist solution and subjected to exposure processing) as a substrate to be processed, A developing solution supply mechanism 3 for supplying a developing solution to the wafer W, a cleaning mechanism 4 for performing a cleaning process on the wafer W after development, a cup mechanism 5 for receiving the developing solution and the cleaning solution scattered from above the wafer W, and each of these mechanisms. And a control unit 6 for controlling.

The wafer holding mechanism 2 includes a spin chuck 7 for sucking and holding the wafer W, and a spin chuck driving mechanism 8 for rotating and driving the spin chuck 7 up and down.
And The wafer holding mechanism 2 has a function of rotating the wafer W at a high speed when cleaning and removing the developer supplied by the developer supply mechanism 3, and shaking off the developer and the cleaning liquid by centrifugal force. The developing solution and the cleaning solution dripping downward from the outer edge of the wafer W are received by the inclined plate 10 fixed to the base 1 and discharged to the outside through a discharge path shown in FIG. The developer and the cleaning liquid scattered from the outer edge of the wafer W are received by the cup mechanism 5, guided by the discharge path 11 by the cup mechanism 5, and discharged to the outside.

The cup mechanism 5 includes an inner cup 12, an outer cup 13 which covers the outside of the inner cup 12 and extends above the inner cup, and a cup driving mechanism 14 for driving the outer cup 13. Consists of

The inner cup 12 is removably inserted into the outer cup 13 and is held by a receiving portion 13a provided at the lower end of the outer cup 13 so as not to fall down. The upper end of the outer cup 13 is formed to have an inner diameter larger than the outer shape of the inner cup 12 so that the inner cup 12 can be easily inserted into and removed from the outer cup 13. The reason why the inner cup 12 is detachable in this way is to consider that only the inner cup 12 is detached and washed.

The inner cup 12 is formed in an inverted J shape. That is, the inner cup 12 has a lower end held by the receiving portion 13 a of the outer cup 13.
A dome portion 12b, one end of which is connected to the upper end of the first vertical wall 12a and the other end of which is bent 180 degrees to face downward, and a dome portion 1
The second vertical wall 12c extends substantially vertically downward from the other end of the second vertical wall 2b. According to such a configuration, as will be described in detail later, the upper end of the first vertical wall 12a, the dome portion 12b, and the second vertical wall 12c
A stagnant portion 16 for trapping the mist scattered from the wafer W and preventing the mist from flowing back to the wafer W side is defined.

FIG. 2 shows the inner cup 12 and the outer cup 1.
It is a perspective view which has a partial longitudinal cross section which expands and shows 3. As shown in this figure, a substantially saw-shaped uneven portion 17 is formed on the inner surface of the inner cup 12 from the upper end of the first vertical wall 12a to the dome portion 12b. The uneven portion 17 has a function of accelerating the mist trapped by the staying portion 16 to promote the formation of the mist into droplets. In addition, the uneven portion 17 is
It also has the function of controlling the vortex generated inside.

Further, a groove 19 is formed in the middle of the first vertical wall 12a in the height direction over the entire circumference. The groove 19 has a function of temporarily holding the liquid that is dropped downward along the first vertical wall 12a. In the groove 19, discharge holes 20 for discharging the droplets are formed at predetermined intervals along the circumferential direction.
In addition, a concave portion 21 is formed at a position corresponding to the position where the discharge hole 20 is provided on the outer cup 13.
The recess 21 is provided over the entire circumference of the outer cup 13 in the circumferential direction. A gas-liquid discharging means 22 is connected to the recess 21 so as to generate a suction pressure in the discharging hole 20. And the groove 1
9. Droplets collected through the discharge hole 20 and the concave portion 21
The gas is discharged to the outside through the gas-liquid discharging means 22. In this embodiment, a receiving piece 19a is protruded in order to effectively collect the droplets in the groove portion 19.

The inner cup 12 and the outer cup 13 thus configured are driven up and down by a cup drive mechanism 14 shown in FIG. This drive mechanism 14
Consists of, for example, a ball screw mechanism 24 arranged with its axis vertical. A screw shaft 26 of the ball screw mechanism 24 is connected to a stepping motor 27, and a nut 25 screwed to the screw shaft 26 is connected to the outer cup 13. Therefore, this stepping motor 2
By actuating the outer cup 13, the outer cup 13 is driven in the vertical direction, and the inner cup 12 is also held by the outer cup 13, so that the outer cup 13 is integrally driven up and down.

On the other hand, the stepping motor 27
An encoder 28 for detecting the rotational position of the stepping motor 27 is attached, and the stepping motor 27 and the encoder 28 are connected to the control unit 6 via a driver (not shown).

Further, a pressure / flow rate detecting unit 30 for detecting a discharge pressure and a discharge flow rate in the discharge path 11 is provided in a discharge path indicated by 11 in FIG. The discharge pressure and the discharge flow rate detected by the detection unit 30 are determined by the control unit 6.
To be sent to

Then, the control unit 6 operates the cup driving mechanism 14 based on the value detected by the detection unit 30,
A cup height controller 32 for controlling the height of the inner cup 12 is provided. That is, the control unit 6 has a function of controlling the height of the cup 12 in real time while monitoring the exhaust flow rate and the exhaust pressure through the detection unit 30.

Next, the developer supply mechanism 3 and the cleaning mechanism 4 shown in FIG. 1 will be described. First, the developer supply mechanism 3 includes a developer supply nozzle 34, a developer supply unit 35 that supplies a developer to the developer supply nozzle 34, and a developer supply nozzle 34 that holds the developer supply nozzle 34 and And a supply nozzle drive mechanism (not shown) that is positioned so as to face the surface.
The developer supply nozzle 34 has a width slightly longer than the diameter of the wafer W, and has a plurality of developer discharge holes (not shown) formed at its lower surface at a pitch of, for example, 2 mm. A liquid reservoir (not shown) is provided in the nozzle 34, and the developer is temporarily stored in the liquid reservoir and then discharged from the discharge hole at a substantially uniform pressure.

The developer flows discharged from the respective discharge holes are supplied to the wafer W in the form of a curtain as adjacent developer flows contact each other. By rotating the spin chuck mechanism 180 degrees while discharging the developer from the supply nozzle 34 in this manner, the liquid is formed over the entire surface of the wafer W. When the liquid is filled, the supply of the developer from the supply nozzle 34 is stopped. Then, the resist film is developed by holding it in a liquid-filled state for a predetermined time.

Next, the cleaning mechanism 4 includes a cleaning nozzle 36,
The cleaning liquid supply unit 3 that supplies the cleaning liquid to the cleaning nozzle 36
7 and a nozzle drive mechanism (not shown) that holds the nozzle 36 and positions the wafer W opposed to the center of the wafer W held by the spin chuck 7. The cleaning liquid is discharged onto the wafer W after the development is completed, and the cleaning liquid is rinsed to remove the developing liquid.

Next, the operation of this device will be described with reference to FIGS. Although this processing is performed in the developing apparatus, FIG. 3 is a flowchart showing only the rotary drying step during the developing processing.

Here, the steps before the rotation drying step will be briefly described. First, the developing solution is supplied to the wafer W by the developing solution supply mechanism and development is performed. Next, the cleaning mechanism operates to supply a cleaning liquid (eg, pure water) onto the wafer. At this time, the spin chuck is driven to rotate at a relatively low speed. As a result, the developer on the wafer is washed away.

Next, the spin drying process shown in FIG. 4 is started. First, the spin chuck 7 starts high-speed rotation (step S1). As shown in FIG. 4, a down flow D in the clean room is introduced from above the inner cup 12, and this down flow D is rectified by the second vertical wall 12c along the outer surface of the inner cup 12. To the upper surface of the wafer W. Near the upper surface of the wafer W,
Since a centrifugal force is applied to the airflow with the high-speed rotation of the wafer W, an outward airflow 40 toward the inside of the inner cup 12 is generated. The outward airflow 40 hits the inner surface of the first vertical wall 12a of the inner cup 12, and generates an upward airflow and a downward airflow. The upward airflow is guided along the inner surfaces of the dome portion 12b of the inner cup 12 and the second vertical wall 12c, and generates a vortex 41 in the stagnation portion 16 without merging with the downflow D.

When mist scattered from the edge of the wafer W rides on such an airflow, the mist is trapped by the vortex 41 in the stagnation portion 16 and scatters from the stagnation portion 16 to the outside. There is no. In addition, the stagnant portion 16
The uneven portion 17 is formed in the inside, and the excessive vortex 4
1 is prevented from being generated, and the formation of mist is promoted.

Here, in this drying step, it is important to stabilize the air flow, and in particular, the gap g between the wafer W and the inner cup 12 (the lower end of the second vertical wall 12c) makes the air flow stable. Contribute greatly. Then, in this device, first, in order to surely trap the mist in the stagnation portion 16, the inner cup 12 is lowered to a predetermined height, and an action of suppressing the air flow is performed (Step S2). This height is a height at which a desired discharge pressure and discharge amount can be obtained, and is a value obtained in advance by an experiment or the like.

However, in a uniform height setting, a desired state may not be obtained depending on various conditions. Accordingly, in this apparatus, the cup 12 is moved up and down while monitoring the discharge pressure and / or the discharge amount by the detection unit 30 to change the gap amount with the wafer W (step S3). Then, the inner cup 12 is positioned at a height at which the discharge pressure / exhaust pressure is stabilized.

When the residual developing solution and the cleaning solution on the wafer W are shaken off and the surface of the wafer is dried by such a process, the rotation of the spin chuck 7 is stopped (step S4).

When the drying of the wafer W is completed, the wafer W is unloaded from the developing device (step S5). That is, the wafer W is driven upward by the spin chuck 7, taken out by an arm (not shown), and discharged from the developing apparatus.

According to such a configuration, the following effects can be obtained. That is, according to the above configuration, the mist scattered from the wafer W is stored in the stagnation portion 1 of the inner cup 12.
Since it is trapped by the vortex 41 in 6 and rotates here,
It does not flow out of the stagnation section 16 to the outside (wafer side). Therefore, it is possible to prevent the mist from scattering from the upper surface of the wafer W above the inner cup 12 and the outer cup 13 and from the outside of the cup.

The second vertical wall 1 of the inner cup 12
2c rectifies the downflow D, and effectively prevents the swirl 41 in the stagnant portion 16 from joining the downflow D. With this, the flow of the airflow on the upper surface of the wafer W can be controlled well, so that generation of unnecessary turbulence in the wafer region can be prevented. As a result, there is an effect that it is possible to effectively prevent a situation in which the mist scattered during rotation is not effectively discharged to the outside of the cup but stays and adheres to the substrate after the rotation is completed.

The developing apparatus is preferably applied to a coating and developing system shown in FIGS.

As shown in FIG. 5, the coating and developing system includes a cassette unit 50 for sequentially taking out wafers W from a cassette CR in which wafers W are stored, and a resist solution coating process for the wafer W taken out by the cassette unit 50. And an interface unit 52 for transferring the wafer W coated with the resist liquid to an exposure apparatus (not shown).

The cassette section 50 has four projections 60a for positioning and holding the cassette CR and wafers W from inside the cassette held by the projections 60a.
And a first sub arm mechanism 61 for taking out the first sub arm mechanism 61 are provided. When the sub-arm mechanism 61 takes out the wafer W, the sub-arm mechanism 61 rotates in the θ direction to change the direction, and can transfer the wafer W to the main arm mechanism 62 provided in the process section 51. ing.

The transfer of the wafer W between the cassette section 50 and the processing section 51 is performed via the third processing unit group G3. This third processing unit group G3 corresponds to FIG.
As shown in Fig. 7, a plurality of process processing units are vertically stacked. That is, the processing unit group G3 includes a cooling unit (COL) for cooling the wafer W, and an adhesion unit (A) for performing a hydrophobic process for improving the fixability of the resist solution to the wafer W.
D), an alignment unit (ALIM) for positioning the wafer W, an extension unit (EXT) for holding the wafer W on standby, and two pre-baking units (PREBAK) for performing a heating process before the exposure process.
E) and two post-baking units (POBAKE) for performing a heating process after the exposure process are sequentially stacked from bottom to top.

The transfer of the wafer W to the main arm mechanism 62 is performed by the extension unit (EXT).
And an alignment unit (ALIM).

As shown in FIG. 5, around the main arm mechanism 62, the third processing unit group G3
The first to fifth processing unit groups G1 to G5 are provided so as to surround the main arm mechanism 62. Similarly to the third processing unit group G3 described above, the other processing unit groups G1, G2, G4, and G5 are configured by stacking various processing units in the vertical direction.

The developing device (DEV) of this embodiment
Are provided in the first and second processing unit groups G1 and G2, as shown in FIG. The first and second processing unit groups G1 and G2 are provided with a resist coating device (COT)
And a developing device (DEV) are vertically stacked.

On the other hand, the main arm mechanism 62
As shown in the figure, a cylindrical guide 69 extended vertically.
And a main arm 6 driven up and down along a guide 69
8 is provided. The main arm 68 is configured to rotate in the plane direction and to be driven forward and backward. Therefore, by driving the main arm 68 in the up-down direction, the wafer W can be moved to the processing unit groups G1.
To G5 can be arbitrarily accessed.

The main arm mechanism 62, which has received the wafer W from the cassette unit 50 via the extension unit (EXT) of the third processing unit group G3, first transfers the wafer W to the adder of the third processing unit group G3. It is carried into a fusion unit (AD) and subjected to a hydrophobic treatment. Next, the wafer W is unloaded from the adhesion unit (AD) and cooled by the cooling unit (COL).

The wafer W having been subjected to the cooling process is transferred to the first processing unit group G1 by the main arm mechanism 62.
(Or the second processing unit group G2) is positioned so as to face the resist liquid coating apparatus (COT), and is carried in. The wafer W coated with the resist liquid by the resist liquid coating device is unloaded by the main arm mechanism,
The interface unit 5 via the fourth processing unit group G4
Handed over to 2.

As shown in FIG. 7, the fourth processing unit group G4 includes a cooling unit (COL), an extension cooling unit (EXT · COL), an extension unit (EXT), a cooling unit (COL), Two pre-baking units (PRE
BAKE) and two post-baking units (P
OBAKE) are sequentially stacked from bottom to top.

The wafer W taken out of the resist liquid coating device (COT) is first inserted into a prebaking unit (PREBAKE), and dried by removing a solvent (thinner) from the resist liquid.

This post-baking unit may be installed separately from the resist solution coating device (COT).
It may be installed in a resist liquid application device.

Next, the wafer W is cooled by a cooling unit (COL) and then transferred to a second sub-arm mechanism 54 provided in the interface section 52 via an extension unit (EXT).

The second sub-arm mechanism 54 that has received the wafer W sequentially stores the received wafer W in the cassette CR. The interface unit transfers the wafer W stored in the cassette CR to an exposure device (not shown) and stores the wafer W in the cassette C in which the exposed wafer W is stored.
Receive R.

The wafer W after the exposure processing is transferred to the main arm mechanism 62 via the fourth processing unit group G4, and the main arm mechanism 62 reverses the above processing. Is inserted into the post-baking unit (POBAKE) if necessary, and then is inserted into the developing device (DEV) of this embodiment to perform the developing process by the scanning method. The wafer W after the development processing is transferred to any one of the baking units, heated and dried, and then discharged to the cassette unit 50 via the extension unit (EXT) of the third processing unit group G3.

The fifth processing unit group G5 includes:
This is selectively provided, and in this example, is configured similarly to the fourth processing unit group G4. Further, the fifth processing unit group G5 is movably held by a rail 55, and is provided with the main arm mechanism 62 and the first to the first.
Maintenance processing can be easily performed on the fourth processing unit groups G1 to G4.

When the developing apparatus of the present invention is applied to the coating and developing unit shown in FIGS. 5 to 7, parallel processing of a plurality of wafers can be easily performed. It can be performed efficiently. Also,
Since the processing units are vertically stacked, the installation area of the apparatus can be significantly reduced.

The present invention is not limited to the above-described embodiment, and it goes without saying that various modifications can be made without departing from the spirit of the invention.

For example, in the above-described embodiment, a wafer is processed, but an apparatus for processing an LCD glass substrate may be used. Also, the second vertical wall 12c of the inner cup 12 needs to have a vertical surface on the wafer W side to rectify downflow, but the inner surface has a dome portion for effectively generating a vortex. It may be formed in a curved surface shape that is continuous with the inner surface of 12b. Further, the lower end of the second vertical wall 12c may be bent outward in the radial direction of the wafer W.

[0062]

According to this structure, a vortex is generated in the airflow stagnation portion of the container, and the mist of the processing liquid can be captured by the vortex, so that the mist flows out of the container toward the wafer. Can be prevented.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram showing an embodiment of the present invention.

FIG. 2 is an enlarged perspective view showing a cup mechanism, which is a main part.

FIG. 3 is a flowchart showing processing steps.

FIG. 4 is a schematic configuration diagram showing a flow of an air current.

FIG. 5 is a plan view showing the overall configuration of a coating and developing system to which an embodiment of the present invention is applied.

FIG. 6 is a front layout view showing the overall configuration of a coating and developing system to which an embodiment of the present invention is applied.

FIG. 7 is a rear view showing the overall configuration of a coating and developing system to which an embodiment of the present invention is applied.

[Explanation of symbols]

 G1 to G5 first to fifth processing unit groups W semiconductor wafer 1 base 2 wafer holding mechanism 3 developer supply mechanism 4 cleaning mechanism 5 cup mechanism 6 control unit 7 spin chuck 8 spin Chuck drive mechanism 10 inclined plate 11 discharge path 12 inner cup 12a first vertical wall 12b dome 12c second vertical wall 13 outer cup 14 cup drive mechanism 16 staying part 17 uneven part DESCRIPTION OF SYMBOLS 19 ... groove part 20 ... discharge hole 21 ... concave part 22 ... gas-liquid discharge means 24 ... ball screw mechanism 25 ... nut part 26 ... screw shaft 27 ... stepping motor 28 ... encoder 30 ... detection part 32 ... control part 34 ... developer supply nozzle 35: developer supply unit 36: cleaning nozzle 37: cleaning liquid supply unit 40: outward airflow 41: vortex

Claims (6)

[Claims] A substrate rotation drive mechanism configured to rotate a substrate processed by the processing liquid and shake the processing liquid; a container surrounding the substrate held by the substrate rotation mechanism and receiving the shaken processing liquid; A discharge path for discharging the processing liquid from the container, wherein the container generates a vortex, and the mist-like processing liquid scattered outward in the radial direction of the substrate by the vortex is trapped in the container. A substrate processing apparatus provided with an airflow stagnation section. 2. The substrate processing apparatus according to claim 1, wherein the airflow staying portion is bent in a direction from a first vertical wall constituting an outer wall of the container to a wafer from an upper end of the first vertical wall. And a second vertical wall extending downward from the dome and having a lower end positioned higher than the substrate. . 3. The substrate processing apparatus according to claim 2, further comprising: a vertical drive mechanism for moving the container up and down; and a control unit for stabilizing an exhaust state by controlling a height of a lower end of the second vertical wall. A substrate processing apparatus, comprising: 4. The substrate processing apparatus according to claim 1, wherein an uneven portion is formed on an inner surface of the airflow stagnation section. 5. The substrate processing apparatus according to claim 1, wherein a discharge path for discharging the received processing liquid is provided at a bottom portion of the container, and the container is provided at an intermediate portion in a height direction of the container. A substrate processing apparatus, wherein a receiving portion for discharging a processing liquid that falls down is formed. 6. A substrate rotation drive mechanism for rotating a substrate processed by a processing liquid and shaking the processing liquid, and surrounding the substrate held by the substrate rotation mechanism and having an edge near a peripheral edge of the substrate. An extended container, and a substrate processing method using a substrate processing apparatus having a discharge mechanism for discharging a processing liquid captured in the container, wherein the processing mechanism discharge pressure or discharge flow rate of the discharge mechanism or both. A substrate processing method comprising: moving the container up and down to control a gap between the substrate and an edge of the container.