JP2001053133A - Substrate-lifting mechanism - Google Patents

Substrate-lifting mechanism

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Publication number
JP2001053133A
JP2001053133A JP22450699A JP22450699A JP2001053133A JP 2001053133 A JP2001053133 A JP 2001053133A JP 22450699 A JP22450699 A JP 22450699A JP 22450699 A JP22450699 A JP 22450699A JP 2001053133 A JP2001053133 A JP 2001053133A
Authority
JP
Japan
Prior art keywords
substrate
support member
horizontal
horizontal support
mounting table
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22450699A
Other languages
Japanese (ja)
Inventor
Masahito Kawakami
雅人 川上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP22450699A priority Critical patent/JP2001053133A/en
Publication of JP2001053133A publication Critical patent/JP2001053133A/en
Pending legal-status Critical Current

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PROBLEM TO BE SOLVED: To prevent positional deviation of a substrate support pins by reducing displacement or deformation of a horizontal support member for supporting the substrate support pins directly below a placement stage. SOLUTION: This horizontal support member 34 is made of a metal or ceramic, and has a ring-shaped support body 44, having three substrate supporting pins 32A, 32B and 32C erected or implanted within a horizontal plane at 120 deg. intervals in the circumferential direction and a pair of shoulder parts 46 and 48 for connecting a pair of ends, facing opposite to each other, of the ring-shaped support body 44 to the upper end parts of both vertical support rods 36 and 38. Both the shoulder parts 46 and 48 comprises horizontal joint members 52 and L-shaped joint members 54, which are integrally connected with bolts 50. The both vertical supporting rods 36 and 38 are connected to a driving means for lifting such as a pneumatic cylinder.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体基板やLC
D基板等の被処理基板を枚葉式で処理する処理装置に用
いられる基板昇降機構に関する。
TECHNICAL FIELD The present invention relates to a semiconductor substrate and an LC
The present invention relates to a substrate elevating mechanism used in a processing apparatus that processes a substrate to be processed such as a D substrate in a single wafer process.

【0002】[0002]

【従来の技術】今日の半導体デバイス製造工程では、半
導体ウエハを1枚単位で処理する枚葉式の処理装置が主
流となっている。一般に、枚葉式の処理装置では、密閉
可能な処理室(チャンバ)内に載置台またはサセプタを
設置し、該載置台上で半導体ウエハを所定温度に加熱し
ながら処理を施すようになっている。
2. Description of the Related Art In today's semiconductor device manufacturing process, a single-wafer processing apparatus for processing semiconductor wafers one by one is mainly used. Generally, in a single-wafer processing apparatus, a mounting table or a susceptor is installed in a process chamber (chamber) that can be sealed, and processing is performed while heating a semiconductor wafer to a predetermined temperature on the mounting table. .

【0003】枚葉式処理装置における典型的な載置台
は、熱伝導率の高い金属またはセラミックス製の円盤体
からなり、発熱体たとえば電熱ヒータを内蔵した熱板と
して構成される。この種の載置台には、複数個たとえば
3個の貫通孔が形成され、各孔内に基板支持ピンが遊嵌
状態で垂直方向に挿通される。外部の搬送装置が半導体
ウエハを処理室内に搬入する際には、基板支持ピンが貫
通孔より上方に突出(上昇)して該半導体ウエハを受け
取り、次いで貫通孔内に退避(下降)することにより、
該半導体ウエハが熱板上に載置される。また、処理済み
の半導体ウエハを処理室外に搬出する際には、基板支持
ピンが貫通孔より上方に突出(上昇)して該半導体ウエ
ハを熱板の上方へ持ち上げ、かかる姿勢で外部搬送装置
に該半導体ウエハを渡すようになっている。
A typical mounting table in a single-wafer processing apparatus is made of a metal or ceramic disk having a high thermal conductivity, and is configured as a heating plate, for example, a heating plate having a built-in electric heater. A plurality of through holes, for example, three through holes are formed in this type of mounting table, and substrate support pins are vertically inserted into each of the holes in a loosely fitted state. When an external transfer device loads a semiconductor wafer into the processing chamber, the substrate support pins protrude (ascend) above the through hole to receive the semiconductor wafer, and then retract (fall) into the through hole. ,
The semiconductor wafer is placed on a hot plate. When the processed semiconductor wafer is carried out of the processing chamber, the substrate support pins protrude (ascend) above the through holes, lift the semiconductor wafer above the hot plate, and move the semiconductor wafer to the external transfer device in such a posture. The semiconductor wafer is delivered.

【0004】上記のような熱板の貫通孔を介して基板支
持ピンを昇降移動させるため、基板支持ピンの下端部を
支持する水平支持部材が載置台の直下に配置され、この
水平支持部材がエアーシリンダ等の駆動手段によって昇
降駆動されるようになっている。
In order to move the substrate support pins up and down through the through holes of the hot plate as described above, a horizontal support member for supporting the lower end of the substrate support pins is disposed immediately below the mounting table. It is driven up and down by driving means such as an air cylinder.

【0005】[0005]

【発明が解決しようとする課題】上記のような枚葉式処
理装置では、処理時に載置台が半導体ウエハを所定温度
(たとえば数百゜C)に加熱する際に、熱板より発生さ
れた熱が周囲の部材にも及ぶ。特に、熱板の直下に位置
する水平支持部材は、熱板からの輻射熱を受けて、熱膨
張しやすい。従来一般のこの種の水平支持部材は、片持
ち梁型に構成されているため、自重で先端部が垂れ下が
りやすい。そこに、熱膨張が重なることで、基板支持ピ
ンの傾きやピン先端部の位置ずれが顕著になり、半導体
ウエハを水平状態で持ち上げたり受け渡しすることが難
しくなるという問題があった。
In the single-wafer processing apparatus as described above, when the mounting table heats the semiconductor wafer to a predetermined temperature (for example, several hundred degrees centigrade C) during processing, heat generated from the hot plate is generated. Extends to surrounding members. In particular, the horizontal support member located immediately below the hot plate is susceptible to thermal expansion by receiving radiant heat from the hot plate. Since this kind of conventional horizontal support member is formed in a cantilever shape, its tip portion is likely to hang down by its own weight. There is a problem in that the thermal expansion overlaps, and the inclination of the substrate support pins and the positional deviation of the pin tips become remarkable, making it difficult to lift and deliver the semiconductor wafer in a horizontal state.

【0006】本発明は、かかる問題点に鑑みてなされた
ものであって、基板支持ピンを載置台直下で支持する水
平支持部材の変位または変形を少なくして、基板支持ピ
ンの位置ずれを防止するようにした基板昇降機構を提供
することを目的とする。
SUMMARY OF THE INVENTION The present invention has been made in view of such a problem, and reduces displacement or deformation of a horizontal support member that supports a substrate support pin immediately below a mounting table to prevent displacement of the substrate support pin. It is an object of the present invention to provide a substrate lifting / lowering mechanism.

【0007】[0007]

【課題を解決するための手段】上記の目的を達成するた
めに、本発明の第1の基板昇降機構は、所定の処理を受
ける被処理基板が載置される載置台に設けられている複
数の貫通孔にそれぞれ昇降移動可能に挿通された複数本
の基板支持ピンと、前記載置台の下方にて水平方向に延
在し、前記複数の基板支持ピンを各々垂直に立てた状態
で支持する水平支持部材と、前記水平支持部材の相対向
する一対の端部に結合され、ほぼ一定の垂直線上で前記
水平支持部材を支持する垂直支持部材と、前記載置台に
対して前記複数本の基板支持ピンを前記貫通孔より上方
に突出する第1の位置と前記貫通孔内に後退する第2の
位置との間で相対的に昇降移動させる昇降駆動手段とを
具備する構成とした。
In order to achieve the above object, a first substrate raising / lowering mechanism of the present invention comprises a plurality of substrates provided on a mounting table on which a substrate to be subjected to a predetermined process is mounted. A plurality of substrate support pins respectively inserted through the through-holes so as to be able to move up and down, horizontally extending below the mounting table, and supporting the plurality of substrate support pins in an upright state. A support member, a vertical support member coupled to a pair of opposed ends of the horizontal support member, and supporting the horizontal support member on a substantially constant vertical line; and the plurality of substrate supports with respect to the mounting table. An up-and-down drive means for relatively vertically moving the pin between a first position protruding above the through-hole and a second position retracting into the through-hole is provided.

【0008】上記第1の基板昇降機構では、水平支持部
材が、両端部にて垂直支持部材に結合され、ほぼ一定の
垂直線状に保持されるため、自重によって傾いたり垂れ
たりすることがないだけでなく、載置台からの輻射熱に
対して熱膨張の変形または変位を起こし難く、水平姿勢
を安定に維持することができる。これにより、基板支持
ピンの傾きや位置ずれを防止することができる。
In the first substrate lifting mechanism, the horizontal support member is connected to the vertical support member at both ends and is held in a substantially constant vertical line, so that the horizontal support member does not tilt or drop due to its own weight. In addition, deformation or displacement of thermal expansion hardly occurs due to radiant heat from the mounting table, and the horizontal posture can be stably maintained. Thereby, inclination and displacement of the substrate support pins can be prevented.

【0009】上記第1の基板昇降機構において、水平支
持部材が前記複数の基板支持ピンを円周方向に所定の間
隔をおいて配設してなるリング状支持体を有する構成と
した場合は、該リング状支持体が均一な温度分布特性を
有し熱膨張の変形を起こし難いため、基板支持ピンの位
置ずれを一層確実に防止することができる。
In the above-mentioned first substrate lifting mechanism, when the horizontal support member has a ring-shaped support member in which the plurality of substrate support pins are arranged at predetermined intervals in a circumferential direction, Since the ring-shaped support has a uniform temperature distribution characteristic and is unlikely to be deformed by thermal expansion, the displacement of the substrate support pins can be prevented more reliably.

【0010】本発明の第2の基板昇降機構は、所定の処
理を受ける被処理基板が載置される載置台に設けられて
いる複数の貫通孔にそれぞれ昇降移動可能に挿通された
複数本の基板支持ピンと、前記載置台の下方にて水平方
向に延在し、前記複数の基板支持ピンを各々垂直に立て
た状態で支持する水平支持部材と、前記水平支持部材の
上面に対向して延在する熱伝導性の上部カバー部と、前
記水平支持部材の下面に対向して延在する熱伝導性の下
部カバー部と、前記上部カバー部と下部カバー部とを熱
的に接続する接続部とを有するカバー部材と、前記載置
台に対して前記複数本の基板支持ピンを前記貫通孔より
上方に突出する第1の位置と前記貫通孔内に後退する第
2の位置との間で相対的に昇降移動させる昇降駆動手段
とを具備する構成とした。
A second substrate lifting mechanism according to the present invention comprises a plurality of through-holes movably inserted into a plurality of through holes provided in a mounting table on which a substrate to be processed to be processed is mounted. A substrate support pin, a horizontal support member extending in a horizontal direction below the mounting table, and supporting the plurality of substrate support pins in an upright state, and extending in opposition to an upper surface of the horizontal support member. A heat conductive upper cover part, a heat conductive lower cover part extending opposite to the lower surface of the horizontal support member, and a connecting part for thermally connecting the upper cover part and the lower cover part. And a cover member having: a first position where the plurality of substrate support pins project above the through-hole with respect to the mounting table; and a second position where the plurality of substrate support pins are retracted into the through-hole. Lifting means for moving up and down vertically It was.

【0011】上記第2の基板昇降機構では、載置台から
の一方向(下向き)の輻射熱がいったん上部カバー部材
に吸収される。そして、上部カバー部材に吸収された熱
は接続部材を介して下部カバー部材に伝導され、上部カ
バー部材からの輻射熱が水平支持部材の上面に与えられ
ると同時に、下部カバー部材からの輻射熱も水平支持部
材の下面に与えられる。これにより、水平支持部材にお
いて形態係数や温度分布が緩和ないし均一化され、熱膨
張に起因する変形が効果的に抑えられる。
In the second substrate lifting mechanism, radiant heat in one direction (downward) from the mounting table is temporarily absorbed by the upper cover member. The heat absorbed by the upper cover member is conducted to the lower cover member via the connecting member, and the radiant heat from the upper cover member is given to the upper surface of the horizontal support member, and the radiant heat from the lower cover member is also horizontally supported. Provided on the lower surface of the member. Thereby, the form factor and the temperature distribution in the horizontal support member are relaxed or uniform, and the deformation due to thermal expansion is effectively suppressed.

【0012】本発明の第3の基板昇降機構は、所定の処
理を受ける被処理基板が載置される載置台に設けられて
いる複数の貫通孔にそれぞれ昇降移動可能に挿通され、
前記載置台上で前記被処理基板を昇降させるための複数
本の基板支持ピンと、前記載置台の下方にて水平方向に
延在し、前記複数の基板支持ピンを各々垂直に立てた状
態で支持する第1の水平支持部材と、前記第1の水平支
持部材の長さ方向において前記第1の水平支持部材とほ
ぼ平行に延在し、一端部が前記第1の水平支持部材の一
端部に連結されている第2の水平支持部材と、前記載置
台に対して前記複数本の基板支持ピンを前記貫通孔より
上方に突出する第1の位置と前記貫通孔内に後退する第
2の位置との間で相対的に昇降移動させる昇降駆動手段
とを具備する構成とした。
The third substrate lifting mechanism according to the present invention is movably inserted into a plurality of through holes provided on a mounting table on which a substrate to be processed to be subjected to predetermined processing is mounted,
A plurality of substrate support pins for raising and lowering the substrate to be processed on the mounting table; and a plurality of substrate support pins extending horizontally below the mounting table and supporting the plurality of substrate support pins vertically. A first horizontal support member that extends substantially in parallel with the first horizontal support member in a longitudinal direction of the first horizontal support member, and has one end connected to one end of the first horizontal support member. A connected second horizontal support member, a first position at which the plurality of substrate support pins project above the through hole with respect to the mounting table, and a second position at which the plurality of substrate support pins are retracted into the through hole. And a lifting drive means for relatively vertically moving between the two.

【0013】上記第3の基板昇降機構においては、各基
板支持ピンを支持する第1の水平支持部材の熱膨張変位
を第2の水平支持部材の熱膨張変位で相殺し、各基板支
持ピンをほぼ定位置に保つことができる。
In the third substrate lifting mechanism, the thermal expansion displacement of the first horizontal support member supporting each substrate support pin is offset by the thermal expansion displacement of the second horizontal support member, and each substrate support pin is removed. It can be kept almost in a fixed position.

【0014】[0014]

【発明の実施の形態】以下、添付図を参照して本発明の
実施例を説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the accompanying drawings.

【0015】図1に、本発明の一実施例における処理装
置の主要な構成を示す。この処理装置は、たとえば減圧
CVD(Chemical Vapor Deposition)装置として構成
されている。
FIG. 1 shows a main configuration of a processing apparatus according to an embodiment of the present invention. This processing apparatus is configured, for example, as a low pressure CVD (Chemical Vapor Deposition) apparatus.

【0016】このCVD装置において、処理室10はた
とえばアルミニウムからなる円筒状の真空チャンバであ
り、室内の中央部に適当な支持部材(図示せず)を介し
て載置台またはサセプタ12が設置される。載置台12
は、熱伝導性の材質たとえばステンレス鋼製で、内部に
発熱体たとえば電熱ヒータ(図示せず)を備えた円盤状
の熱板からなり、後述する基板支持ピン32を載置台1
2上に突出・退避可能とする離散的な複数個の(たとえ
ば円周方向に120゜間隔で3個の)貫通孔12aを有
している。
In this CVD apparatus, the processing chamber 10 is a cylindrical vacuum chamber made of, for example, aluminum, and a mounting table or a susceptor 12 is installed at a central portion of the chamber via a suitable support member (not shown). . Mounting table 12
Is made of a heat conductive material, for example, stainless steel, and is made of a disk-shaped hot plate provided with a heating element, for example, an electric heater (not shown) inside.
A plurality of discrete through-holes 12a (e.g., three at circumferential intervals of 120 [deg.]) That can protrude and retreat are provided on the second through-hole.

【0017】処理室10の側璧には自動開閉器たとえば
ゲートバルブ14が設けられている。被処理基板たとえ
ば半導体ウエハWが室内に搬入される時または室外へ搬
出する時、ゲートバルブ14が開き、外部の基板搬送装
置のアーム(図示せず)がゲートバルブ14を通って処
理室10内に出入りするようになっている。かかる半導
体ウエハWの搬入/搬出時には、後述する本実施例の基
板昇降機構30も作動して、半導体ウエハWを載置台1
2に載置する動作(搬入時)または載置台12から上方
へ持ち上げる動作(搬出時)を行うようになっている。
An automatic switch such as a gate valve 14 is provided on a side wall of the processing chamber 10. When a substrate to be processed, for example, a semiconductor wafer W is carried into or out of the room, the gate valve 14 is opened, and an arm (not shown) of the external substrate transfer device is moved through the gate valve 14 into the processing chamber 10. To come and go. When loading / unloading the semiconductor wafer W, the substrate lifting / lowering mechanism 30 of the present embodiment described later is also operated, and the semiconductor wafer W is placed on the mounting table 1.
2 (at the time of carrying in) or an operation of lifting up from the mounting table 12 (at the time of carrying out).

【0018】処理室10の上部には、載置台12上の処
理空間から区画されたガス室16が設けられている。こ
のガス室16の載置台12と対向する面(下面)18は
多数の孔18aを有する多孔板で構成されている。処理
中は、ガス供給源(図示せず)よりガス供給管20,2
2を介してガス室16に送られてきた複数種類の原料ガ
スが、ガス室16内でよく混合してから、多孔板18の
孔18aより均一な濃度および流量で載置台12上の半
導体ウエハWに吹き付けられるようになっている。
Above the processing chamber 10, a gas chamber 16 is provided which is partitioned from a processing space on the mounting table 12. A surface (lower surface) 18 of the gas chamber 16 facing the mounting table 12 is formed of a perforated plate having a large number of holes 18a. During the process, a gas supply source (not shown) supplies gas supply pipes 20 and 2.
After a plurality of types of source gases sent to the gas chamber 16 through the gas chamber 2 are mixed well in the gas chamber 16, the semiconductor wafers on the mounting table 12 are uniformly distributed through the holes 18 a of the porous plate 18 at a uniform flow rate. W can be sprayed.

【0019】処理室10の下面中心部に、かつ載置台1
2の中心軸とほぼ同軸に形成されている排気口24は、
排気管(図示せず)を介して真空ポンプ(図示せず)に
通じている。該真空ポンプによる排気で、処理室10内
が所定の真空度に維持されるとともに、CVD処理の際
に生じる気体の反応副生成物が室外へ排出されるように
なっている。このような底面中央部の排気口24は排気
効率に優れている反面、この部分またはスペースに機械
的要素(特に基板昇降機構の駆動部)を配設できないと
いう制約をもたらす。
At the center of the lower surface of the processing chamber 10 and on the mounting table 1
The exhaust port 24 formed substantially coaxially with the central axis of
It communicates with a vacuum pump (not shown) through an exhaust pipe (not shown). By the evacuation by the vacuum pump, the inside of the processing chamber 10 is maintained at a predetermined degree of vacuum, and gaseous reaction by-products generated during the CVD processing are discharged outside the chamber. Although the exhaust port 24 at the center of the bottom surface is excellent in the exhaust efficiency, there is a restriction that a mechanical element (particularly, a drive unit of the substrate lifting mechanism) cannot be disposed in this portion or space.

【0020】本実施例による基板昇降機構30は、載置
台12の複数(図示の例では3個)の貫通孔12aにそ
れぞれ昇降移動可能に挿通された複数本(3本)の基板
支持ピン32A,32B,32Cと、載置台12の直下
で水平方向に延在し、それらの基板支持ピン32A,3
2B,32Cを各々垂直に立てた状態で支持する水平支
持部材34と、この水平支持部材34の相対向する一対
の端部34a,34bに結合され、ほぼ一定の垂直線上
でそれら一対の端部34a,34bひいては水平支持部
材34全体を支持する昇降移動可能な一対の垂直支持ロ
ッド36,38と、これらの垂直支持ロッド36,38
の下端部にそれぞれのピストンロッド40a,42aが
固着されている一対のエアシリンダ40,42とを有し
ている。
The substrate elevating mechanism 30 according to the present embodiment includes a plurality (three) of substrate support pins 32A which are movably inserted into a plurality of (three in the illustrated example) through holes 12a of the mounting table 12. , 32B, 32C and the substrate support pins 32A, 3B extending in the horizontal direction immediately below the mounting table 12.
A horizontal support member 34 for supporting each of the 2B and 32C in an upright state, and a pair of opposite ends 34a and 34b of the horizontal support member 34 which are coupled to each other on a substantially constant vertical line. 34a, 34b, and a pair of vertically movable rods 36, 38 which support the entire horizontal support member 34 and which can move up and down, and these vertical support rods 36, 38
And a pair of air cylinders 40, 42 to which respective piston rods 40a, 42a are fixed.

【0021】図2に水平支持部材34の構成を示す。こ
の水平支持部材34は、金属材またはセラミック材から
なり、3本の基板支持ピン32A,32B,32Cを水
平面内で円周方向に120゜間隔で立設または植設して
なるリング状の支持体44と、このリング状支持体44
の相対向する一対の端部を両垂直支持ロッド36,38
の上端部に連結する一対の肩部46,48とを有してい
る。
FIG. 2 shows the structure of the horizontal support member 34. The horizontal support member 34 is made of a metal material or a ceramic material, and is a ring-shaped support in which three substrate support pins 32A, 32B, and 32C are erected or implanted at intervals of 120 ° in a circumferential direction in a horizontal plane. Body 44 and this ring-shaped support body 44
Of the pair of vertical support rods 36, 38
And a pair of shoulders 46, 48 connected to the upper end of the head.

【0022】図示の例における各肩部46,48は、ボ
ルト50で一体結合された水平ジョイント部材52とL
状ジョイント部材54とで構成されている。そして、水
平ジョイント部材52の先端部(内側端部)がリング状
支持体44に一体形成または一体結合され、L状ジョイ
ント部材54の垂直基端部(水平支持部材34の両端部
34a,34b)がボルト56で垂直支持ロッド36
(38)に結合されている。
Each of the shoulder portions 46 and 48 in the illustrated example is connected to a horizontal joint member 52 integrally connected with a bolt 50 by L.
And a joint member 54. The distal end (inner end) of the horizontal joint member 52 is integrally formed or integrally connected to the ring-shaped support member 44, and the vertical base end of the L-shaped joint member 54 (both ends 34a and 34b of the horizontal support member 34). Is the bolt 56 and the vertical support rod 36
(38).

【0023】再び図1において、両垂直支持ロッド3
6,38の中間部ないし下端部は、処理室10の底面に
形成されている開口58,60を昇降移動可能に貫通
し、処理室10の下に設けられたベローズ62,64に
それぞれ収容されている。両垂直支持ロッド36,38
がシール機能付きのジョイント66を介してベローズ6
2,64の下端閉塞板62a,64aに固着されてい
る。両エアシリンダ40,42は、制御部(図示せず)
より共通の空気圧回路68を介して制御され、互いに連
動して同じ駆動動作を行うようになっている。
Referring again to FIG. 1, both vertical support rods 3
The middle or lower end of the processing chamber 10 penetrates through openings 58 and 60 formed on the bottom surface of the processing chamber 10 so as to be able to move up and down, and is accommodated in bellows 62 and 64 provided below the processing chamber 10. ing. Both vertical support rods 36, 38
Is a bellows 6 through a joint 66 having a sealing function.
2 and 64 are fixed to the lower end closing plates 62a and 64a. Both air cylinders 40 and 42 are controlled by a control unit (not shown).
It is controlled through a more common pneumatic circuit 68, and performs the same driving operation in conjunction with each other.

【0024】次に、本実施例における基板昇降機構30
の作用を説明する。
Next, the substrate elevating mechanism 30 in the present embodiment
The operation of will be described.

【0025】処理室10内に処理対象の半導体ウエハW
が搬入される前は、エアシリンダ40,42のピストン
ロッド40a,42aがそれぞれ原位置に後退してお
り、他の各部も図1の実線で示す各々の原位置にあり、
各基板支持ピン32A,32B,32Cは載置台12の
各貫通孔12a内に退避している。
The semiconductor wafer W to be processed is placed in the processing chamber 10.
Before is carried in, the piston rods 40a and 42a of the air cylinders 40 and 42 are respectively retracted to their original positions, and other parts are also at their original positions shown by solid lines in FIG.
Each of the substrate support pins 32A, 32B, 32C is retracted into each through hole 12a of the mounting table 12.

【0026】半導体ウエハWが搬入される時は、ゲート
バルブ14が開いて外部の基板搬送装置のアームが処理
室10内に入ってくるのと連動または同期して、両エア
シリンダ40,42のピストンロッド40a,42aが
所定の距離(ストローク)だけ上方に前進する。これに
より、両ピストンロッド40a,42aにそれぞれ連結
されている両垂直支持ロッド36,38が上昇移動し
て、両垂直支持ロッド36,38に連結されている水平
支持部材34およびこの水平支持部材34に支持されて
いる基板支持ピン32A,32B,32Cが図1の鎖線
で示すそれぞれの往動位置まで上昇移動する。この上昇
移動によって、各基板支持ピン32A,32B,32C
は載置台12の各貫通孔12aより上方に同じ高さだけ
突出する。なお、両垂直支持ロッド36,38が上昇移
動することで、両ベローズ62,64が上方に収縮す
る。
When the semiconductor wafer W is carried in, the gate valves 14 are opened and the arms of the external substrate transfer device enter the processing chamber 10 in conjunction with or in synchronism therewith. The piston rods 40a and 42a advance upward by a predetermined distance (stroke). As a result, the vertical support rods 36, 38 connected to the piston rods 40a, 42a respectively move upward, and the horizontal support member 34 connected to the vertical support rods 36, 38 and the horizontal support member 34 The substrate support pins 32A, 32B, and 32C supported by the above move upwardly to respective forward positions indicated by chain lines in FIG. By this upward movement, each of the substrate support pins 32A, 32B, 32C
Protrudes above the respective through holes 12a of the mounting table 12 by the same height. In addition, both bellows 62 and 64 contract upward by the vertical movement of both vertical support rods 36 and 38.

【0027】かくして、処理室10内で上記外部搬送ア
ームは、載置台12の貫通孔12aより上方に同じ高さ
で突出している基板支持ピン32A,32B,32Cの
上に半導体ウエハWを平行状態(姿勢)で渡すことがで
きる。
Thus, in the processing chamber 10, the external transfer arm places the semiconductor wafer W in a parallel state on the substrate support pins 32A, 32B, and 32C projecting at the same height above the through holes 12a of the mounting table 12. (Posture) can be passed.

【0028】上記のようにして外部搬送アームから基板
支持ピン32A,32B,32Cに半導体ウエハWが渡
されると、次に両エアシリンダ40,42のピストンロ
ッド40a,42aが原位置まで下方に後退する。これ
により、両垂直支持ロッド36,38が下降移動し、水
平支持部材34および基板支持ピン32A,32B,3
2Cも各々の原位置まで下降移動する。この下降移動に
よって、各基板支持ピン32A,32B,32Cは載置
台12の各貫通孔12a内に退避する。その結果、半導
体ウエハWは載置台12の上面(載置面)に着地するよ
うにして平行状態(姿勢)で載置される。なお、両垂直
支持ロッド36,38が原位置に下降移動するとき、両
ベローズ62,64は下方に伸張する。
When the semiconductor wafer W is transferred from the external transfer arm to the substrate support pins 32A, 32B, 32C as described above, the piston rods 40a, 42a of the air cylinders 40, 42 are then retracted downward to their original positions. I do. As a result, both the vertical support rods 36 and 38 move downward, and the horizontal support member 34 and the substrate support pins 32A, 32B, 3
2C also moves down to each original position. By this downward movement, each of the substrate support pins 32A, 32B, 32C is retracted into each through hole 12a of the mounting table 12. As a result, the semiconductor wafer W is mounted in a parallel state (posture) so as to land on the upper surface (mounting surface) of the mounting table 12. When the vertical support rods 36 and 38 move down to their original positions, the bellows 62 and 64 extend downward.

【0029】載置台12は、内臓の電熱ヒータによって
常時加温され、その上面(載置面)に半導体ウエハWが
載置されると、これを所定温度に加熱する。こうして減
圧下で所定温度に加熱される半導体ウエハWにガス室1
6より原料ガスが吹き付けられることにより、ウエハ表
面上で原料ガスが反応し、反応生成物がウエハ表面に堆
積する。この反応で生成した気体または反応せずに残っ
た気体は排気口24より排気部側へ排出される。
The mounting table 12 is constantly heated by a built-in electric heater, and when the semiconductor wafer W is mounted on its upper surface (mounting surface), it is heated to a predetermined temperature. The semiconductor wafer W heated to a predetermined temperature under reduced pressure in the gas chamber 1
By blowing the source gas from 6, the source gas reacts on the wafer surface, and a reaction product is deposited on the wafer surface. The gas generated by this reaction or the gas remaining without the reaction is exhausted from the exhaust port 24 to the exhaust unit side.

【0030】上記のような減圧CVDの成膜処理が終了
すると、処理済みの半導体ウエハWを搬出するため、基
板昇降機構30において上記搬入時と同様の昇降動作が
行なわれる。すなわち、基板昇降機構30の各可動部が
上記各々の往動位置まで上昇移動し、各基板支持ピン3
2A,32B,32Cは半導体ウエハWを水平姿勢のま
ま持ち上げながら載置台12の各貫通孔12aより上方
に突出する。この状態で、外部搬送アームがゲートバル
ブ14を通って処理室10内に入ってきて、基板支持ピ
ン32A,32B,32Cより半導体ウエハWを受け取
る。半導体ウエハWを外部搬送アームに渡した後、基板
昇降機構30の各可動部は各々の原位置まで下降移動
し、各基板支持ピン32A,32B,32Cは載置台1
2の各貫通孔12a内に退避する。
When the film forming process of the low pressure CVD as described above is completed, in order to carry out the processed semiconductor wafer W, the substrate lifting / lowering mechanism 30 performs the same lifting / lowering operation as at the time of loading. That is, each movable portion of the substrate lifting mechanism 30 moves up to each of the forward movement positions, and
2A, 32B, and 32C protrude upward from the through holes 12a of the mounting table 12 while lifting the semiconductor wafer W in a horizontal posture. In this state, the external transfer arm enters the processing chamber 10 through the gate valve 14 and receives the semiconductor wafer W from the substrate support pins 32A, 32B, 32C. After transferring the semiconductor wafer W to the external transfer arm, each movable part of the substrate elevating mechanism 30 moves down to its original position, and each of the substrate support pins 32A, 32B, 32C is mounted on the mounting table 1.
2 is retracted into each through hole 12a.

【0031】本実施例の基板昇降機構30において、水
平支持部材34は、両端部34a,34bが両垂直支持
ロッド36,38に結合され、両ロッドの軸上に保持さ
れているため、自重によって傾く(垂れる)ことがない
だけでなく、載置台12から輻射熱を受けても熱膨張の
変形(特に長さ方向の変形)が起こり難く、水平姿勢を
安定に維持することができる。これにより、基板支持ピ
ン32A,32B,32Cの傾きや位置ずれを効果的に
防止することができる。
In the substrate elevating mechanism 30 of the present embodiment, the horizontal support member 34 has both ends 34a, 34b connected to the vertical support rods 36, 38 and is held on the axes of both rods. Not only does it not tilt (drop), but also does not easily undergo thermal expansion deformation (especially, deformation in the length direction) even when it receives radiant heat from the mounting table 12, and can maintain a stable horizontal posture. Thereby, the inclination and displacement of the substrate support pins 32A, 32B, 32C can be effectively prevented.

【0032】しかも、水平支持部材34は、それ自体が
均一な温度分布特性を有し熱膨張の変形を起こし難いリ
ング状の支持体44に基板支持ピン32A,32B,3
2Cを取り付けているため(図2)、基板支持ピン32
A,32B,32Cの位置ずれを一層確実に防止するこ
とができる。
Further, the horizontal support member 34 is provided on the ring-shaped support member 44, which itself has a uniform temperature distribution characteristic and is hardly deformed by thermal expansion, on the substrate support pins 32A, 32B, 3B.
2C (FIG. 2), the substrate support pins 32
A, 32B and 32C can be more reliably prevented from being displaced.

【0033】図示の例では水平支持部材34における各
肩部46,48を水平ジョイント部材52とL状ジョイ
ント部材54との複合部材で構成しているが、単一部材
で構成してもよい。あるいは、各肩部46,48の全体
をリング状支持体44または垂直支持ロッド36,38
と一体形成してもよい。
In the illustrated example, the shoulders 46 and 48 of the horizontal support member 34 are composed of a composite member of the horizontal joint member 52 and the L-shaped joint member 54, but may be composed of a single member. Alternatively, the entirety of the shoulders 46 and 48 may be formed by using the ring-shaped support 44 or the vertical support rods 36 and 38.
May be integrally formed.

【0034】次に、図3および図4につき本発明の第2
の実施例による基板昇降機構を説明する。なお、この第
2の実施例において上記第1の実施例と共通の構成・機
能を有する部分には同一の参照符号を用いる。
Next, referring to FIGS. 3 and 4, a second embodiment of the present invention will be described.
The substrate lifting mechanism according to the embodiment will be described. In the second embodiment, the same reference numerals are used for parts having the same configurations and functions as those in the first embodiment.

【0035】この基板昇降機構30’の水平支持部材7
0は、垂直支持ロッド80の上端部にL状ジョイント部
72を介してほぼ水平に取り付けられた片持ち梁型の水
平アーム74を有している。この水平アーム74の先端
部は、ほぼ水平な面内で放射状に多方向たとえば3方向
に分岐し、それらの分岐アーム部76A,76B,76
Cの先端部に基板支持ピン32A,32B,32Cをそ
れぞれほぼ垂直に立設または植設している。水平アーム
74の基端部はボルト78でL状ジョイント部72に固
定され、L状ジョイント部72はボルト(図示せず)等
で垂直支持ロッド80の上端部に固定されている。水平
アーム74の基端部およびL状ジョイント部72が水平
支持部材70における肩部を構成している。
The horizontal support member 7 of the substrate lifting mechanism 30 '
Numeral 0 has a cantilever-type horizontal arm 74 that is attached substantially horizontally to the upper end of a vertical support rod 80 via an L-shaped joint 72. The distal end of the horizontal arm 74 radially branches in multiple directions, for example, three directions, in a substantially horizontal plane, and the branch arms 76A, 76B, 76 are provided.
Substrate support pins 32A, 32B, 32C are erected or implanted substantially vertically at the tip of C. The base end of the horizontal arm 74 is fixed to the L-shaped joint 72 with a bolt 78, and the L-shaped joint 72 is fixed to the upper end of the vertical support rod 80 with a bolt (not shown) or the like. The base end of the horizontal arm 74 and the L-shaped joint 72 constitute a shoulder of the horizontal support member 70.

【0036】この基板昇降機構30’においては、水平
支持部材70の全体が熱伝導率の高い材質たとえばステ
ンレス鋼からなる四角筒状のカバー部材82で覆われて
いる。このカバー部材82の上璧部または上部カバー部
82aは水平支持部材70の上面と対向してこれとほぼ
平行に(水平に)延在し、下璧部または下部カバー部8
2bは水平支持部材70の下面と対向してこれとほぼ平
行に(水平に)延在し、両側璧部つまり側面カバー部
(接続部)82c,82dは水平支持部材70の側面と
対向してこれとほぼ平行に(垂直に)延在するとともに
上部カバー部82aおよび下部カバー部82bを物理的
かつ熱的に接続している。
In the substrate lifting / lowering mechanism 30 ', the entire horizontal support member 70 is covered with a rectangular cylindrical cover member 82 made of a material having high thermal conductivity, for example, stainless steel. The upper wall portion or the upper cover portion 82a of the cover member 82 faces the upper surface of the horizontal support member 70 and extends substantially in parallel (horizontally) therewith.
2b is opposed to the lower surface of the horizontal support member 70 and extends substantially parallel thereto (horizontally), and both side wall portions, that is, side cover portions (connection portions) 82c and 82d are opposed to the side surface of the horizontal support member 70. It extends substantially parallel (vertically) and physically and thermally connects the upper cover portion 82a and the lower cover portion 82b.

【0037】カバー部材82は、垂直支持ロッド80を
通す下部カバー部82bの開口84の外で金具86およ
びボルト88により垂直支持ロッド80に固定取付され
ている。水平支持部材70の組立てまたはセッティング
を容易にするため、カバー部材82を分解可能な構成と
してもよい。
The cover member 82 is fixedly attached to the vertical support rod 80 by a metal fitting 86 and a bolt 88 outside the opening 84 of the lower cover portion 82b through which the vertical support rod 80 passes. To facilitate assembly or setting of the horizontal support member 70, the cover member 82 may be configured to be disassembled.

【0038】この基板昇降機構30’をたとえば図1の
ような処理装置に組み込む場合は、垂直支持ロッド80
がエアシリンダ40のピストンロッド40aに結合され
るとともに、処理室10の下面において開口60が閉塞
される(エアシリンダ42は不要である)。したがっ
て、エアシリンダ40のピストンロッド40aがその原
位置から所定ストロークだけ前進すると、基板昇降機構
30’の各可動部が各々の往動位置まで上昇して、各基
板支持ピン32A,32B,32Cは載置台12の各貫
通孔12aより上方に同じ高さだけ突出する。また、ピ
ストンロッド40aがその往動位置から原位置まで後退
すると、基板昇降機構30’の各可動部が各々の原位置
まで下降して、各基板支持ピン32A,32B,32C
は載置台12の各貫通孔12a内に退避する。
When the substrate elevating mechanism 30 'is incorporated in a processing apparatus such as that shown in FIG.
Is connected to the piston rod 40a of the air cylinder 40, and the opening 60 is closed at the lower surface of the processing chamber 10 (the air cylinder 42 is unnecessary). Therefore, when the piston rod 40a of the air cylinder 40 advances by a predetermined stroke from its original position, each movable portion of the substrate elevating mechanism 30 'moves up to each forward position, and each of the substrate support pins 32A, 32B, 32C is moved. The mounting table 12 protrudes above the respective through holes 12a by the same height. When the piston rod 40a moves backward from its forward position to the original position, each movable part of the substrate lifting mechanism 30 'descends to its original position, and each substrate support pin 32A, 32B, 32C.
Retreats into each through hole 12a of the mounting table 12.

【0039】この基板昇降機構30’において、カバー
部材82も可動部の1つとして水平支持部材70や垂直
支持ロッド80等と一体に昇降移動する。原位置でも往
動位置でも、図4に示すように、カバー部材82の上部
カバー部82aは上方より載置台12からの輻射熱Hを
受ける。上部カバー部82aで吸収された熱はカバー部
材82内で側面カバー部(接続部)82c,82dを経
由して下部カバー部82bに伝導される。これにより、
カバー部材82の内部では、水平支持部材70の上面に
対して上部カバー部82aより輻射熱hUが供給される
とともに、水平支持部材70の下面に対しても下部カバ
ー部材2bより輻射熱hLが供給される。もちろん、両
側面カバー部82c,82dからの輻射熱も供給され
る。
In the substrate lifting mechanism 30 ', the cover member 82 also moves up and down integrally with the horizontal support member 70, the vertical support rod 80 and the like as one of the movable parts. At both the original position and the forward position, as shown in FIG. 4, the upper cover portion 82a of the cover member 82 receives the radiant heat H from the mounting table 12 from above. The heat absorbed by the upper cover portion 82a is conducted to the lower cover portion 82b through the side cover portions (connection portions) 82c and 82d in the cover member 82. This allows
Inside the cover member 82, the radiant heat hU is supplied to the upper surface of the horizontal support member 70 from the upper cover portion 82a, and the radiant heat hL is also supplied to the lower surface of the horizontal support member 70 from the lower cover member 2b. . Of course, the radiant heat from both side cover parts 82c and 82d is also supplied.

【0040】このように、載置台12からの一方向(下
向き)の輻射熱Hがいったんカバー部材82に吸収さ
れ、カバー部材82の全面から、特に上部カバー部82
aからの下向きの輻射熱hUだけでなく下部カバー部8
2bからの上向きの輻射熱hLも同時に水平支持部材7
0に与えられることにより、水平支持部材70において
形態係数や温度分布が緩和(補償)ないし均一化され、
熱膨張に起因する変形が効果的に抑えられる。
As described above, the radiant heat H from the mounting table 12 in one direction (downward) is temporarily absorbed by the cover member 82, and from the entire surface of the cover member 82, particularly, the upper cover portion 82
not only the downward radiant heat hU from a but also the lower cover 8
The upward radiant heat hL from 2b is also supplied to the horizontal support member 7 at the same time.
By giving 0, the form factor and the temperature distribution in the horizontal support member 70 are relaxed (compensated) or made uniform,
Deformation due to thermal expansion is effectively suppressed.

【0041】なお、この基板昇降機構30’における水
平支持部材70は、片持ち梁構造であるため、上記した
第1実施例のような両持ち梁構造に比して水平度を正確
に確保するのは難しい面がある。しかし、上記のように
熱膨張分の変形を考慮しなくて済むため、機械的な調整
で実用上十分な水平度を得ることが可能である。
Since the horizontal support member 70 of the substrate lifting mechanism 30 'has a cantilever structure, the horizontality can be more accurately secured as compared with the double-supported beam structure of the first embodiment. There are difficult aspects. However, since it is not necessary to consider the deformation due to the thermal expansion as described above, it is possible to obtain practically sufficient levelness by mechanical adjustment.

【0042】図示の例ではカバー部材82を四角筒状に
形成したが、他の種々の形状も可能である。たとえば、
図3においてカバー部材82の前端および後端の開口を
閉塞して四方密閉構造としてもよい。あるいは、図3の
カバー構造よりも開口度の大きな構成、たとえば側面カ
バー部82c,82dの両方が部分的に開口された構成
あるいは一方が省略された構成も可能である。また、上
部カバー部82aおよび下部カバー部82bにおいて
も、形態係数や温度分布が特に問題となる水平アーム7
4の基端部ないし肩部の部分を上下両側から包む込むこ
とは肝要であるが、水平アーム74の先端部側を一部省
略した構成としてもよい。
In the illustrated example, the cover member 82 is formed in the shape of a square tube, but other various shapes are also possible. For example,
In FIG. 3, the opening at the front end and the rear end of the cover member 82 may be closed to form a four-way sealed structure. Alternatively, a configuration having a larger opening degree than the cover structure in FIG. 3, for example, a configuration in which both the side cover portions 82c and 82d are partially opened or a configuration in which one is omitted is also possible. Also, in the upper cover portion 82a and the lower cover portion 82b, the horizontal arm 7 in which the form factor and the temperature distribution are particularly problematic.
Although it is important to wrap the base end or shoulder portion of 4 from both upper and lower sides, a configuration in which the distal end side of the horizontal arm 74 is partially omitted may be adopted.

【0043】次に、図5および図6につき本発明の第3
の実施例による基板昇降機構を説明する。なお、この第
3の実施例においても、上記第1および第2の実施例と
共通の構成・機能を有する部分には同一の参照符号を用
いる。
Next, FIGS. 5 and 6 show a third embodiment of the present invention.
The substrate lifting mechanism according to the embodiment will be described. In the third embodiment, the same reference numerals are used for portions having the same configuration and function as those in the first and second embodiments.

【0044】この基板昇降機構30”の水平支持部材9
0は、基板支持ピン32A,32B,32Cを各々垂直
に立てた状態で支持する上部水平アーム92と、この上
部水平アーム92の長さ方向において上部水平アーム9
2とほぼ平行に延在し、その先端部が上部水平アーム9
2の基端部に垂直ジョイント部材94を介してボルト9
6で連結または固定され、その基端部がL状ジョイント
部材72にボルト78で固定されている下部水平アーム
98とを有している。
The horizontal support member 9 of the substrate lifting mechanism 30 "
Reference numeral 0 denotes an upper horizontal arm 92 that supports the substrate support pins 32A, 32B, and 32C in an upright state, and an upper horizontal arm 9 in the length direction of the upper horizontal arm 92.
2, the tip of which extends substantially parallel to the upper horizontal arm 9.
The bolt 9 is connected to the base end of the
6 has a lower horizontal arm 98 whose base end is fixed to the L-shaped joint member 72 by bolts 78.

【0045】上部水平アーム92は、中心部で基端側か
らみて約120゜の角度で左右斜めに2つの分岐アーム
部92b,92cを水平に分岐させ、基端部とそれら分
岐アーム部92b,92cの先端部にそれぞれ基板支持
ピン32A,32B,32Cを垂直に立設してなる。上
部水平アーム92の中心部より長さ方向に延びる延長部
92dは、後述するように上部水平アーム92の熱膨張
変位が下部水平アーム98の熱膨張(変位)によって相
殺されるような長さに設定されてよい。
The upper horizontal arm 92 horizontally branches the two branch arms 92b and 92c diagonally left and right at an angle of about 120 ° when viewed from the base end at the center, and the base end and the branch arms 92b and 92b. The board support pins 32A, 32B, 32C are vertically provided at the tip of the 92c. The extension 92d extending in the length direction from the center of the upper horizontal arm 92 has a length such that the thermal expansion displacement of the upper horizontal arm 92 is offset by the thermal expansion (displacement) of the lower horizontal arm 98 as described later. May be set.

【0046】両水平アーム92,98は、同じ材質で同
じ膨張率を有するものであってもよく、あるいは異なる
材質で異なる膨張率を有するものであってもよい。
The horizontal arms 92 and 98 may be of the same material and have the same expansion coefficient, or may be of different materials and have different expansion coefficients.

【0047】この基板昇降機構30”も上記第2の実施
例の基板昇降機構30’と同様にして処理室10に組み
込まれてよい。処理室10内で、両水平アーム92,9
8は、載置台12からの輻射熱Hを受けて熱膨張し、特
に長さ方向において伸張(変位)する。ここで、下部水
平アーム98は、基端部がL状ジョイント部材72ない
し垂直支持ロッド80に固定されているため、基端部は
定位置に保持され、基端部から先端部に向かう向き(図
6の左方)に伸張(変位)する。一方、上部水平アーム
92は、基端部が垂直ジョイント部94に固定されてい
るため、基端部から先端部に向かう向き(図6の右方)
に変位する。これにより、上部水平アーム92および下
部水平アーム98の熱膨張率またはアーム長を適宜選択
することで、上部水平アーム92の熱膨張変位δ1と下
部水平アーム98の熱膨張変位δ2とを互いに相殺さ
せ、各基板支持ピン32A,32B,32Cをほぼ定位
置に保つことができる。
This substrate raising / lowering mechanism 30 "may be incorporated in the processing chamber 10 in the same manner as the substrate lifting / lowering mechanism 30 'of the second embodiment. In the processing chamber 10, both horizontal arms 92, 9 are provided.
8 thermally expands by receiving the radiant heat H from the mounting table 12, and expands (displaces) particularly in the length direction. Here, since the base end of the lower horizontal arm 98 is fixed to the L-shaped joint member 72 or the vertical support rod 80, the base end is held in a fixed position, and a direction from the base end toward the front end ( It expands (displaces) to the left of FIG. On the other hand, the upper horizontal arm 92 has a base end portion fixed to the vertical joint portion 94, and thus is directed from the base end portion to the tip end portion (rightward in FIG. 6).
Is displaced. Thus, by appropriately selecting the thermal expansion coefficient or the arm length of the upper horizontal arm 92 and the lower horizontal arm 98, the thermal expansion displacement δ1 of the upper horizontal arm 92 and the thermal expansion displacement δ2 of the lower horizontal arm 98 cancel each other. The respective substrate support pins 32A, 32B, 32C can be maintained at substantially fixed positions.

【0048】このように、この実施例の基板昇降機構3
0”においても、水平支持部材70が片持ち梁構造であ
るものの、熱膨張変位の影響が少ないため、水平アーム
機構の機械的調整で実用上十分な水平度を得ることが可
能である。
As described above, the substrate elevating mechanism 3 of this embodiment
Even at 0 ", although the horizontal support member 70 has a cantilever structure, the effect of thermal expansion displacement is small, so that practically sufficient levelness can be obtained by mechanical adjustment of the horizontal arm mechanism.

【0049】なお、基板支持ピンの本数等に応じて上記
の各実施例における水平支持部材の構成や形状を種々変
形することができる。水平支持部材と垂直支持部材とを
連結または結合するための部材も上記実施例のようなL
状ジョイント部材(54,72)を用いる構成に限るも
のではなく、両支持部材同士を直接結合する構成として
もよい。
The configuration and shape of the horizontal support member in each of the above embodiments can be variously modified according to the number of substrate support pins and the like. The member for connecting or connecting the horizontal support member and the vertical support member is also L as in the above embodiment.
The configuration is not limited to the configuration using the joint members (54, 72), but may be a configuration in which both support members are directly connected to each other.

【0050】上記した実施例では、載置台12を固定
し、基板昇降機構側の可動部を昇降移動させる構成であ
った。しかし、逆に、基板昇降機構の各部を固定し、載
置台12を昇降移動する構成とすることも可能である。
昇降駆動部材は、エアシリンダに限定されるものではな
く、電動モータやボールネジ機構、ベルト機構等でも可
能である。垂直支持部材は水平支持部材との結合部をほ
ぼ一定の垂直線上で保持できるものであれば任意の形状
が可能である。
In the above embodiment, the mounting table 12 is fixed, and the movable part on the substrate lifting mechanism side is moved up and down. However, conversely, it is also possible to adopt a configuration in which the components of the substrate lifting mechanism are fixed and the mounting table 12 is moved up and down.
The lifting drive member is not limited to the air cylinder, but may be an electric motor, a ball screw mechanism, a belt mechanism, or the like. The vertical support member may have any shape as long as it can hold the connection with the horizontal support member on a substantially constant vertical line.

【0051】上記した実施例の基板昇降機構は半導体ウ
エハを扱うものであったが、他の被処理基板たとえばL
CD基板、ガラス基板、CD基板、プリント基板等も可
能である。本発明の基板昇降機構は、上記実施例におけ
るCVD装置に限るものではなく、エッチング装置、ア
ドヒージョン装置、ベーキング装置等の処理装置でも勿
論使用可能である。
Although the substrate elevating mechanism of the above embodiment handles a semiconductor wafer, another substrate to be processed, for example, L
A CD substrate, a glass substrate, a CD substrate, a printed substrate, and the like are also possible. The substrate raising / lowering mechanism of the present invention is not limited to the CVD apparatus in the above embodiment, but may be used in a processing apparatus such as an etching apparatus, an adhesion apparatus, and a baking apparatus.

【0052】[0052]

【発明の効果】以上説明したように、本発明の基板昇降
機構によれば、基板支持ピンを載置台直下で支持する水
平支持部材の変位または変形を少なくして、基板支持ピ
ンの位置ずれを防止することができる。
As described above, according to the substrate elevating mechanism of the present invention, the displacement or deformation of the horizontal support member that supports the substrate support pins directly below the mounting table is reduced, and the displacement of the substrate support pins is reduced. Can be prevented.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例における処理装置の主要な構
成を示す略縦断面図である。
FIG. 1 is a schematic vertical sectional view showing a main configuration of a processing apparatus according to an embodiment of the present invention.

【図2】第1実施例における基板昇降機構の水平支持部
材の構成を示す斜視図である。
FIG. 2 is a perspective view illustrating a configuration of a horizontal support member of the substrate lifting mechanism according to the first embodiment.

【図3】第2実施例における基板昇降機構の水平支持部
材の構成を示す斜視図である。
FIG. 3 is a perspective view illustrating a configuration of a horizontal support member of a substrate lifting mechanism according to a second embodiment.

【図4】第2実施例における基板昇降機構の水平支持部
材の構成を模式的に示す側面図である。
FIG. 4 is a side view schematically illustrating a configuration of a horizontal support member of a substrate lifting mechanism according to a second embodiment.

【図5】第3実施例における基板昇降機構の水平支持部
材の構成を示す斜視図である。
FIG. 5 is a perspective view illustrating a configuration of a horizontal support member of a substrate lifting mechanism according to a third embodiment.

【図6】第3実施例における基板昇降機構の水平支持部
材の構成を模式的に示す側面図である。
FIG. 6 is a side view schematically illustrating a configuration of a horizontal support member of a substrate lifting mechanism according to a third embodiment.

【符号の説明】[Explanation of symbols]

10 処理室 12 載置台 30,30’,30” 基板昇降機構 32A,32B,32C 基板支持ピン 34 水平支持部材 36,38 垂直支持ロッド 40,42 エアシリンダ 44 リング状支持体 70 水平支持部材 74 水平アーム 80 垂直支持ロッド 82 カバー部材 82a 上部カバー部 82b 下部カバー部 82c,82d 側面カバー部 90 水平支持部材 92 上部水平アーム 98 下部水平アーム Reference Signs List 10 processing chamber 12 mounting table 30, 30 ', 30 "substrate elevating mechanism 32A, 32B, 32C substrate support pin 34 horizontal support member 36, 38 vertical support rod 40, 42 air cylinder 44 ring-shaped support 70 horizontal support member 74 horizontal Arm 80 Vertical support rod 82 Cover member 82a Upper cover part 82b Lower cover part 82c, 82d Side cover part 90 Horizontal support member 92 Upper horizontal arm 98 Lower horizontal arm

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 所定の処理を受ける被処理基板が載置さ
れる載置台に設けられている複数の貫通孔にそれぞれ昇
降移動可能に挿通された複数本の基板支持ピンと、 前記載置台の下方にて水平方向に延在し、前記複数の基
板支持ピンを各々垂直に立てた状態で支持する水平支持
部材と、 前記水平支持部材の相対向する一対の端部に結合され、
ほぼ一定の垂直線上で前記水平支持部材を支持する垂直
支持部材と、 前記載置台に対して相対的に前記複数本の基板支持ピン
を前記貫通孔より上方に突出する第1の位置と前記貫通
孔内に後退する第2の位置との間で昇降移動させる昇降
駆動手段とを具備する基板昇降機構。
A plurality of substrate support pins respectively movably vertically inserted into a plurality of through holes provided in a mounting table on which a substrate to be processed to be subjected to a predetermined process is mounted; A horizontal support member that extends in the horizontal direction and supports the plurality of substrate support pins in a vertically standing state, and is coupled to a pair of opposed ends of the horizontal support member,
A vertical support member that supports the horizontal support member on a substantially constant vertical line; a first position where the plurality of substrate support pins project above the through hole relative to the mounting table; An elevating drive means for elevating and lowering a second position retracted into the hole.
【請求項2】 前記水平支持部材が、前記複数の基板支
持ピンを円周方向に所定の間隔をおいて配設してなるリ
ング状支持体を有する請求項1に記載の基板昇降機構。
2. The substrate lifting / lowering mechanism according to claim 1, wherein the horizontal support member has a ring-shaped support in which the plurality of substrate support pins are arranged at predetermined intervals in a circumferential direction.
【請求項3】 所定の処理を受ける被処理基板が載置さ
れる載置台に設けられている複数の貫通孔にそれぞれ昇
降移動可能に挿通された複数本の基板支持ピンと、 前記載置台の下方にて水平方向に延在し、前記複数の基
板支持ピンを各々垂直に立てた状態で支持する水平支持
部材と、 前記水平支持部材の上面に対向して延在する熱伝導性の
上部カバー部と、前記水平支持部材の下面に対向して延
在する熱伝導性の下部カバー部と、前記上部カバー部と
下部カバー部とを熱的に接続する接続部とを有するカバ
ー部材と、 前記載置台に対して相対的に前記複数本の基板支持ピン
を前記貫通孔より上方に突出する第1の位置と前記貫通
孔内に後退する第2の位置との間で昇降移動させる昇降
駆動手段とを具備する基板昇降機構。
3. A plurality of substrate support pins respectively movably inserted into a plurality of through holes provided in a mounting table on which a substrate to be processed to be subjected to a predetermined process is mounted, and A horizontal support member extending in the horizontal direction and supporting each of the plurality of substrate support pins in an upright state; and a thermally conductive upper cover portion extending opposite to the upper surface of the horizontal support member. A cover member having a thermally conductive lower cover portion extending opposite to the lower surface of the horizontal support member, and a connection portion for thermally connecting the upper cover portion and the lower cover portion; Lifting drive means for lifting and lowering the plurality of substrate support pins between a first position protruding above the through-hole relative to the mounting table and a second position retracting into the through-hole; A substrate elevating mechanism comprising:
【請求項4】 所定の処理を受ける被処理基板が載置さ
れる載置台に設けられている複数の貫通孔にそれぞれ昇
降移動可能に挿通された複数本の基板支持ピンと、 前記載置台の下方にて水平方向に延在し、前記複数の基
板支持ピンを各々垂直に立てた状態で支持する第1の水
平支持部材と、 前記第1の水平支持部材の長さ方向において前記第1の
水平支持部材とほぼ平行に延在し、一端部が前記第1の
水平支持部材の一端部に連結されている第2の水平支持
部材と、 前記載置台に対して相対的に前記複数本の基板支持ピン
を前記貫通孔より上方に突出する第1の位置と前記貫通
孔内に後退する第2の位置との間で昇降移動させる昇降
駆動手段とを具備する基板昇降機構。
4. A plurality of substrate support pins which are respectively movably inserted into a plurality of through holes provided in a mounting table on which a substrate to be processed to be subjected to a predetermined process is mounted, and A first horizontal support member extending in the horizontal direction and supporting the plurality of substrate support pins in an upright state, and the first horizontal support member extends in a length direction of the first horizontal support member. A second horizontal support member extending substantially parallel to the support member and having one end connected to one end of the first horizontal support member; and the plurality of substrates relatively to the mounting table. A substrate lifting / lowering mechanism comprising: lifting / lowering drive means for lifting / lowering a support pin between a first position protruding above the through hole and a second position receding into the through hole.
【請求項5】 請求項1〜4のいずれかに記載の基板昇
降機構を備えた加熱装置。
5. A heating device comprising the substrate lifting / lowering mechanism according to claim 1.
JP22450699A 1999-08-06 1999-08-06 Substrate-lifting mechanism Pending JP2001053133A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22450699A JP2001053133A (en) 1999-08-06 1999-08-06 Substrate-lifting mechanism

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22450699A JP2001053133A (en) 1999-08-06 1999-08-06 Substrate-lifting mechanism

Publications (1)

Publication Number Publication Date
JP2001053133A true JP2001053133A (en) 2001-02-23

Family

ID=16814878

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22450699A Pending JP2001053133A (en) 1999-08-06 1999-08-06 Substrate-lifting mechanism

Country Status (1)

Country Link
JP (1) JP2001053133A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014531583A (en) * 2011-09-06 2014-11-27 ケーエルエー−テンカー コーポレイション Passive position compensation of spindles, stages, or components exposed to thermal loads

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014531583A (en) * 2011-09-06 2014-11-27 ケーエルエー−テンカー コーポレイション Passive position compensation of spindles, stages, or components exposed to thermal loads

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