JP2001052983A - Heat treatment apparatus and method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a heat treatment apparatus and a method therefor in which the substrate transfer time can be reduced to improve throughput in treating a substrate in the case of heat treatment a low temperature. SOLUTION: An anti-reflection-film coated wafer W is transferred to a treatment chamber 50, by placed on lift pins 54, approached to a low-temperature heating prate 51 by lowering the lift pins 54, and subjected to a lowtemperature heat treatment there. Then, the wafer W is approached to a high-temperature heating plate 52 by being lifted up by the lift pins 54, and subjected to a high- temperature heat treatment there. Then, the wafer W is lowered by the lift pins 54 and is taken out from the treatment chamber 50.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment apparatus and a heat treatment method for performing heat treatment on a substrate such as a semiconductor wafer.

[0002]

2. Description of the Related Art In a photolithography process of a semiconductor device, a resist is applied to a semiconductor wafer, a resist film formed by the resist is exposed according to a predetermined circuit pattern, and the exposed pattern is developed to develop a resist. A circuit pattern is formed on the film.

Conventionally, a resist coating and developing system has been used to carry out such a series of steps. Such a resist coating and developing processing system includes a processing station in which various processing units for performing various processing for coating and developing on a semiconductor wafer are arranged in multiple stages,
A cassette station for storing a plurality of semiconductor wafers is mounted, a semiconductor station for loading semiconductor wafers one by one into a processing station, unloading processed semiconductor wafers from the processing station and storing them in a cassette, and a cassette station adjacent to this system. And an interface unit for transferring a semiconductor wafer to and from an exposure apparatus for exposing a resist film to a predetermined pattern.

In such a resist coating and developing system, for example, wafers are taken out one by one from a cassette placed in a cassette station, transported to a processing station, and first set to a predetermined temperature by a cooling unit. An anti-reflection film (bottom layer) is formed in the resist coating unit, heated in the hot plate unit, and cooled in the cooling unit. Then, a photoresist film is applied in a resist coating unit, and baking processing is performed in a heat treatment unit.

[0005] Thereafter, the semiconductor wafer is transferred from the processing station to the exposure apparatus via the interface section, and the resist film is exposed to a predetermined pattern by the exposure apparatus. After the exposure, the semiconductor wafer is transported again to the processing station via the interface unit, and the exposed semiconductor wafer is first subjected to post-exposure bake processing in the heating processing unit, and after cooling, to the developing processing unit. Then, a developer is applied to develop the exposure pattern. Thereafter, a post-baking process is performed in the heat processing unit, and the post-baking process is performed to complete the series of processes. After a series of processes is completed, the semiconductor wafer is transferred to a cassette station and stored in a wafer cassette.

[0006]

By the way, in such a series of resist coating and developing treatments, when a wafer is coated with an anti-reflection film (bottom layer) and subjected to a heating treatment, a solvent volatilization and a curing treatment are performed. From the viewpoint of separating functions, a two-stage heat treatment is performed in which a heat treatment is first performed by a hot plate unit set at a low temperature, and then a heat treatment is performed by a hot plate unit set at a high temperature.

However, such low and high temperature 2
When performing various types of heat treatment, first, the semiconductor wafer is loaded into a low-temperature heat treatment unit and heat-treated at a low temperature.
After that, the semiconductor wafer must be unloaded from the low-temperature heating unit, loaded into the high-temperature heating unit, heated at a high temperature, and unloaded from the high-temperature heating unit. Is complicated. Therefore, it acts as a negative factor for a demand for further improvement in throughput.

The present invention has been made in view of such circumstances, and when performing heat treatment on a substrate at a high temperature and a low temperature, it is possible to shorten the time required to transport the substrate and improve the throughput. An object is to provide an apparatus and a heat treatment method.

[0009]

SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention provides a substrate processing apparatus for performing a heat treatment on a substrate, comprising a processing chamber for accommodating the substrate, and a processing chamber disposed opposite to each other in the processing chamber. And a first and second heating plate for heating the substrate at relatively low and high temperatures, respectively, and supporting the substrate carried into the processing chamber and moving the substrate between the first and second plates. And a moving means for moving the heat treatment apparatus.

According to such a configuration, the substrate is moved between the first and second heating plates disposed in one processing chamber and heat-treating the substrate at relatively low and high temperatures, respectively. Since the substrate can be heated by the heating plate, the substrate transfer time when the substrate is subjected to the heat treatment at a high temperature and a low temperature can be remarkably reduced, and the throughput can be improved.

In this case, it is possible to further comprise a control means for controlling the moving means so as to heat the substrate by the first and / or second heating plates based on a predetermined sequence.

Further, the control means moves to a heating position by the first heating plate for heating the substrate at a relatively low temperature, performs a heat treatment on the substrate there, and then heats the substrate to a relatively high temperature. The moving means can be controlled so as to move to a heating position by the second heating plate and perform a heat treatment there.

Further, the first heating plate for heating the substrate to a relatively low temperature and the second heating plate for heating the substrate to a relatively high temperature are arranged such that one of them is on the upper side and the other is on the lower side. Can be arranged.

Further, the apparatus further includes a buffer having a heat absorbing function or a heat insulating function, and a loading / unloading mechanism for loading / unloading the buffer between the first and second heating plates in the processing chamber. Can be. Thus, when the substrate is heated by the first heating plate that heats the substrate to a relatively low temperature, the heat from the second heating plate that heats the substrate to a relatively high temperature can be absorbed or blocked by the buffer material. As a result, the thermal influence of the first heating plate on the substrate can be reduced. In this case, the loading / unloading control means causes the buffer material to move into the first position based on a predetermined sequence.
The loading / unloading mechanism can be controlled such that the loading / unloading mechanism is loaded or unloaded between the second heating plate and the second heating plate.

Further, the processing chamber may have a plurality of loading / unloading ports for loading / unloading the substrate, thereby shortening the moving distance of the moving member when loading / unloading the substrate. In addition, since the substrate before processing can be loaded while the substrate after processing is unloaded, the throughput is further improved.

The present invention also relates to a substrate processing method for performing a heat treatment on a substrate, wherein a first and a second heating plate for heating the substrate at relatively low and high temperatures are opposed to each other in a processing chamber. And performing a heat treatment on one of the first and second heating plates and then a heat treatment on the other of the substrates carried into the processing chamber. I do.

In this method, the substrate is moved to a heating position by the first heating plate for heating the substrate to a relatively low temperature, where the substrate is subjected to a heat treatment and then heated to a relatively high temperature. It is possible to move to a heating position by the heating plate and to perform a heat treatment there.

Further, at the time of the heat treatment by the first heating plate, a buffer material having a heat absorbing function or a heat insulating function can be inserted between the first heating plate and the second heating plate. .

[0019]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a schematic plan view showing a resist coating and developing system equipped with a hot plate unit according to one embodiment of the present invention, FIG. 2 is a front view thereof, and FIG. 3 is a rear view thereof.

This resist coating and developing processing system 1
A cassette station 10 which is a transfer station;
A processing station 11 having a plurality of processing units;
An interface unit 12 for transferring a wafer W between the processing station 11 and an exposure apparatus (not shown) provided adjacent to the processing station 11 is provided.

The cassette station 10 includes a semiconductor wafer W (hereinafter simply referred to as a wafer) as an object to be processed.
In a state where a plurality of wafers are loaded in the wafer cassette CR in units of, for example, 25 wafers, the wafer W is loaded into or out of this system from another system, or the wafer W is transferred between the wafer cassette CR and the processing station 11
Is to be transported.

In the cassette station 10, as shown in FIG.
A plurality of (four in the figure) positioning projections 20a along the direction
The wafer cassette CR can be placed at a position of the projection 20a in a line with the respective wafer entrances facing the processing station 11 side. In the wafer cassette CR, the wafers W are arranged in a vertical direction (Z direction). Also, the cassette station 10
A wafer transfer mechanism 21 is provided between the wafer cassette mounting table 20 and the processing station 11. The wafer transfer mechanism 21 has a wafer transfer arm 21a that is movable in the cassette arrangement direction (X direction) and the wafer arrangement direction of the wafers W therein (Z direction). Of the wafer cassette CR can be selectively accessed. The wafer transfer arm 21a is configured to be rotatable in the θ direction, and is provided with an alignment unit (ALI) belonging to a _third processing unit group G3 on the processing station 11 side described later.
M) and the extension unit (EXT).

The processing station 11 is provided with a plurality of processing units for performing a series of steps for performing a coating / phenomenon on the semiconductor wafer W, and these are arranged at predetermined positions in multiple stages. The semiconductor wafer W
Are processed one by one. This processing station 11
As shown in FIG. 1, a transfer path 22a is provided at the center, and a main wafer transfer mechanism 22 is provided therein.
All processing units are arranged around 2a. The plurality of processing units are divided into a plurality of processing unit groups, and in each processing unit group, a plurality of processing units are arranged in multiple stages along the vertical direction.

As shown in FIG. 3, the main wafer transfer mechanism 22 is provided with a wafer transfer device 46 inside a cylindrical support 49 so as to be able to move up and down in the vertical direction (Z direction). The cylindrical support 49 is rotatable by the rotational driving force of a motor (not shown), and accordingly, the wafer transfer device 4
6 is also rotatable integrally.

The wafer transfer device 46 includes a plurality of holding members (tweezers) 4 movable in the front-rear direction of the transfer base 47.
The transfer of the wafer W between the processing units is realized by the holding members 48.

As shown in FIG. 1, in this embodiment, four processing unit groups G ₁ , G ₂ , G ₃ ,
G ₄ are actually arranged around the wafer transport path 22a, the processing unit group G ₅ is adapted to be positioned as required.

Of these, the first and second processing unit groups G ₁ and G ₂ are located at the front of the system (the front in FIG. 1).
The third processing unit group G ₃ is disposed adjacent to the cassette station 10, and the fourth processing unit group G ₄ is disposed adjacent to the interface unit 12. The processing unit group G ₅ of the fifth is adapted to be disposed on the rear portion.

[0028] In this case, as shown in FIG. 2, the first processing unit group G _1, the spin chuck and the wafer W in a cup CP of two that is placed (not shown) performs the predetermined processing Spinner type processing unit is arranged in upper and lower two stages,
In this embodiment, a resist coating unit (COT) for coating the resist on the wafer W and a developing unit (DEV) for developing the resist pattern are stacked in two stages from the bottom. Similarly, the second processing unit group G _2, a resist coating unit (COT) and a developing unit (DEV) are two-tiered in order from the bottom as two spinner-type processing units. The first processing resist coating unit of the unit group _{G 1} (COT) and a second processing resist coating unit of the unit group _{G 2} (CO
One of T) is an anti-reflection film (bottom layer)
The other is used for resist application for pattern formation, and the other is used for normal resist application for pattern formation.

As described above, the resist coating unit (CO
The reason for disposing T) on the lower side is that the waste liquid of the resist solution is inherently more complicated than the waste liquid of the developer both mechanically and in terms of maintenance, and thus the resist coating unit (C)
This is because the complexity is alleviated by disposing the OT) in the lower stage. However, if necessary, a resist coating unit (COT) can be arranged in the upper stage.

[0030] In the third processing unit group G _3, as shown in FIG. 3, the oven-type processing units of the wafer W is placed on a mounting table SP performs predetermined processing are multi-tiered. That is, a cooling unit (COL) for performing a cooling process, an adhesion unit (AD) for performing a so-called hydrophobizing process for improving the fixability of a resist, an alignment unit (ALIM) for performing positioning, and carrying in and out of the wafer W. Extension unit (EX
T), three normal hot plate units (HP) for performing a heating process on the wafer W before and after the exposure process and after the development process, and the hot plate unit (LHP / HHP) according to the present embodiment. ) Are stacked in eight steps from the bottom. In addition, instead of the alignment unit (ALIM), a cooling unit (COL)
And the cooling unit (COL) may have an alignment function. The hot plate unit (LHP / HHP) according to the present embodiment will be described later.

The fourth processing unit group G ₄ may, oven-type processing units are multi-tiered. That is, a cooling unit (COL), an extension cooling unit (EXTCOL) which is a wafer loading / unloading section provided with a cooling plate, an extension unit (EXT), a cooling unit (COL), and four normal hot plate units (HP) Are stacked in eight steps from the bottom.

As described above, the cooling unit (COL) and the extension cooling unit (EXTCOL) having a low processing temperature are arranged in the lower stage, and the hot plate unit (HP) having a high processing temperature is arranged in the upper stage. Thermal interference can be reduced. Of course, a random multi-stage arrangement may be used.

[0033] As described above, it can be provided a fifth processing unit group G ₅ on the rear side of the main wafer transfer mechanism 22, when the fifth processing unit group G ₅ to provide the guide rail 25 Along the main wafer transfer mechanism 21 to move to the side. Therefore, even in the case where the processing unit group G ₅ of the fifth, the space portion is secured by sliding along the guide rail 25 to this maintenance work from behind the main wafer transfer mechanism 21 easily Can be done. In this case,
The space is not limited to such a linear movement, and the space can be similarly secured by rotating. In addition,
The processing unit group G ₅ in the fifth, basically third
As in the case of the fourth processing unit groups G ₃ and G ₄ , a unit having a structure in which open processing units are stacked in multiple stages can be used.

The interface section 12 has the same length as the processing station 11 in the depth direction (X direction). As shown in FIGS. 1 and 2, a portable pickup cassette CR and a stationary buffer cassette BR are arranged in two stages at the front of the interface section 12, and a peripheral exposure device 23 is arranged at the rear. The wafer transfer mechanism 24 is provided at the center. The wafer transfer mechanism 24 has a wafer transfer arm 24a. The wafer transfer arm 24a moves in the X and Z directions and can access the cassettes CR and BR and the peripheral exposure device 23. . Further, the wafer transfer arm 24a is rotatable in θ direction, the fourth processing unit group G ₄ belonging extension unit and (EXT), more wafer delivery of the adjacent exposure device side stand of the process station 11 (Not shown) can also be accessed.

In the resist coating / developing processing system 1 configured as described above, first, in the cassette station 10, the wafer transfer arm 21a of the wafer transfer mechanism 21 stores the unprocessed wafer W on the cassette mounting table 20. The wafer cassette CR is accessed, one wafer W is taken out from the cassette CR, and the extension unit (EX) of the _third processing unit group G3 is accessed.
Transport to T).

The wafer W is loaded from the extension unit (EXT) into the processing station 11 by the wafer transfer device 46 of the main wafer transfer mechanism 22.
Then, after being at a predetermined temperature by the third processing unit group G ₃ of the cooling unit (COL), is conveyed to one of the resist coating unit (COT), where the resist for the anti-reflective film (bottom layer) coating Is done. After the anti-reflection film resist coating process, the hot plate unit (LHP / HHP) according to the present embodiment performs a low-temperature heat treatment for solvent volatilization and a high-temperature heat treatment for curing. Done. Thereafter, the wafer W is transferred to the cooling unit (CO
L) and cooled. In normal processing,
Instead of performing the formation of the antireflection layer and the heat treatment, the adhesion treatment unit (AD) may perform a hydrophobic treatment (HMDS treatment).

The wafer W cooled by the cooling unit (COL) is transferred to the resist coating unit (COT) by the wafer transfer device 46 after the coating and heating of the antireflection film resist are completed. A film is formed. After the completion of the coating process, the wafer W is subjected to a pre-baking process in one of the hot plate units (HP) of the processing unit groups G ₃ and G ₄ , and then cooled by one of the cooling units (COL).

The cooled wafer W is supplied to the third processing unit.
Group G₃Transported to the alignment unit (ALIM)
And after alignment there, the fourth processing unit
Group G ₄Via the extension unit (EXT)
It is transported to the interface unit 12.

In the interface section 12, peripheral exposure is performed by a peripheral exposure apparatus 23 to remove excess resist. Thereafter, the wafer W is transferred to an exposure apparatus (not shown) provided adjacent to the interface section 12, where the wafer W is transferred. Exposure processing is performed on the resist film of the wafer W according to a predetermined pattern.

The wafer W after the exposure is again returned to the interface unit 12, the wafer transfer member 24 is carried to the extension unit (EXT) belonging to the fourth processing unit group _{G 4.} Then, the wafer W is transferred to one of the hot plate units (HP) by the wafer transfer device 46 and subjected to post-exposure bake processing, and then the cooling unit (COL)
Cooling.

Thereafter, the wafer W is transferred to the developing unit (DE
V), where the exposure pattern is developed. After the development is completed, the wafer W is transferred to one of the hot plate units (HP) and subjected to post-baking, and then cooled by the cooling unit (COL). After such a series of processing is completed, the third processing unit group G ₃ of the extension unit (EXT)
And is returned to the cassette station 10 via one of the wafer cassettes CR.

Next, with reference to FIGS. 4 and 5, the hot plate unit (LHP / HHP) according to the present embodiment will be described.
Will be described. FIG. 4 is a schematic cross-sectional view showing a hot plate unit (LHP / HHP) according to the present embodiment in which a wafer is heated by a low-temperature heating plate, and FIG. It is a schematic sectional drawing which shows the hot plate unit (LHP / HHP) which concerns on this embodiment in the state which is performing the heat processing.

This hot plate unit (LHP / H
In the processing chamber 50 of the HP), two heating plates 51 and 52 are arranged to face each other as shown in FIG.
A first heating plate 51 set at a relatively low temperature is arranged, and a second heating plate 52 set at a relatively high temperature is arranged on the upper side. However, a high-temperature heating plate may be arranged on the lower side, and a low-temperature heating plate may be arranged on the upper side.

A support member 53 for supporting three lift pins 54 (only two are shown) is provided below the lower first heating plate 51, and a cylinder 55 for raising and lowering the support member 53. Is provided. Therefore,
The lift pins 54 are moved up and down by the cylinder 55 through the low-temperature heating plate 51 to move the wafer W up and down. That is, the wafer W loaded by the wafer transfer device 46 is placed on the lift pins 54,
By lowering the lift pins 54, the heating pins 51 are brought close to the low-temperature heating plate 51, where the low-temperature heating processing is performed. Next, as shown by a virtual line in FIG.
Is raised by the lift pins 54 and is brought close to the high-temperature heating plate 52, where a high-temperature heat treatment is performed.

The movement of the lift pin 54 by the cylinder 55 is controlled by the controller 70. That is, the lifting and lowering operation of the wafer W by the lift pins 54 is controlled so that the heating process is performed based on a predetermined sequence set in advance.

The wafer transfer device 4 is located beside the processing chamber 50.
A loading / unloading port 56 for loading / unloading the wafer W loaded by 6 is provided, and the loading / unloading port 56 is closed by a shutter 58.

On the opposite side of the processing chamber 50, the processing chamber 50
In order to exhaust the inside, exhaust branch pipes 57a and 57b are provided so as to correspond to the two heating plates 51 and 52, respectively, and these exhaust branch pipes 57a and 57b are connected to the downstream exhaust pipe 57. Thereby, the vicinity of the lower first heating plate 51 is exhausted by the lower exhaust branch pipe 57a, and the vicinity of the upper second heating plate 52 is exhausted by the upper exhaust branch pipe 57b. .
Dampers 101 and 102 are provided inside the exhaust branch pipes 57a and 57b, respectively. By opening and closing the exhaust branch pipes 57a and 57b by these,
The vicinity of the heating plate on which the heat treatment is being performed can be exhausted. That is, when heating with the first heating plate 51, the damper 101 is opened to exhaust air, and when heating with the second heating plate 52, the damper 1 is heated.
02 can be opened to exhaust air. Further, by adjusting the degree of opening of the damper 102 when heating with the heating plate 52 and reducing the amount of exhaust, the generation of turbulence is suppressed, and uniform curing can be achieved. The opening and closing of the dampers 101 and 102 are also controlled by the controller 70.

In the hot plate unit (LHP / HHP) configured as described above, the wafer W is subjected to the heat treatment at a relatively low temperature and the heat treatment at a high temperature as follows.

First, the wafer W to which the antireflection film (bottom layer) is applied is carried into the processing chamber 50 through the carry-in / out port 56 by the carrying device 46, and is placed on the lift pins 54. The lift pins 54 are lowered, the wafer W is brought close to the first heating plate 51 set at a relatively low temperature, and a heating process is performed at a relatively low temperature.

After the heat treatment at this low temperature, the wafer W is lifted by the lift pins 54 as shown in FIG.
It is brought close to the second heating plate 52 set at a relatively high temperature, and is heated at a relatively high temperature. Thereafter, the wafer W is lowered by the lift pins 54, placed on the wafer transfer device 46, and unloaded from the processing chamber 50.

As described above, in the present embodiment, the wafer W can be subjected to the high-temperature and low-temperature heat treatments in one processing chamber 50, so that the time required for carrying the substrates during the heat treatment is significantly reduced. It is possible to improve throughput.

Next, another embodiment of the hot plate unit (LHP / HHP) will be described with reference to FIG. 6 and FIG. 6 and 7 are schematic cross-sectional views showing a hot plate unit (HP) according to another embodiment. FIG. 6 shows a process of heating a wafer W by a first heating plate 51 set at a relatively low temperature. FIG. 7 shows a state where the wafer W is being heated by the second heating plate 52 set at a relatively high temperature.

In this embodiment, as shown in FIG. 6, when the wafer W is baked by the low-temperature heating plate 51, a heat absorbing function of absorbing heat from the high-temperature heating plate 52 or a heat insulating function of blocking the heat. And the wafer W
A cushioning material 60 is provided to prevent thermal influence on the two heating plates 51 and 52 in the processing chamber 50 through a loading / unloading port 56 by a loading / unloading mechanism 61 on which the buffering material 60 is placed. It is designed to be carried in and out in between. In the present embodiment, the cylinder 55 and the dampers 101, 10
2, a controller 70 'for controlling the driving mechanism 62 of the loading / unloading mechanism 61 is provided, so that not only the lifting / lowering operation of the wafer W by the lift pins 54 and the exhaust, but also the cushioning material by the loading / unloading mechanism 61 is provided. The loading and unloading of 60 is also controlled.

The buffer member 60 is configured to be carried into and out of the processing chamber 50 by the carrying-in / out mechanism 61. After the buffering material 60 is carried in, the processing chamber 5 is held by an appropriate holding member.
May be configured to be held in a predetermined position within 0,
In this case, the carry-in / out mechanism 61 can be retracted out of the processing chamber 50 during the heating process with the first heating plate 51 set at a relatively low temperature. The 56 shutters 58 can be closed. Also,
The buffer material 60 is loaded and unloaded through the loading / unloading port 56 for the wafer W, but may be configured to be loaded and unloaded through the loading / unloading port 56 for the buffer material 60.

In the hot plate unit (LHP / HHP) configured as described above, the wafer W is subjected to a heat treatment at a relatively low temperature and a heat treatment at a high temperature as follows.

First, the wafer W coated with the anti-reflection film (bottom layer) is loaded into the processing chamber 50 by the transfer device 46 through the loading / unloading port 56, and is placed on the lift pins 54. At the same time, the buffer material 60 is carried into the processing chamber 50 by the carry-in / out mechanism 61 via the carry-in / out port 56 between the two heating plates 51 and 52.

The lift pins 54 are lowered, the wafer W is brought close to the first heating plate 51 set at a relatively low temperature, and a heating process is performed at a relatively low temperature. On this occasion,
Since the shutter 58 is open, the air from the loading / unloading port 56 is exhausted from the exhaust pipe 57, so that the solvent can be exhausted intensively, and the solvent can be prevented from adhering to the processing chamber. After the heat treatment at this low temperature, as shown in FIG. 7, the buffer material 60 is carried out by the carry-in / out mechanism 61, and the shutter 58 is closed.

Next, as shown in FIG. 7, the wafer W
It is raised by the lift pins 54, approaches the second heating plate 52 set at a relatively high temperature, and is heated at a relatively high temperature. After that, the wafer W is lifted by the lift pins 5.
4, is placed on the wafer transfer device 46, and is unloaded from the processing chamber 50.

As described above, in this embodiment, the wafer W is controlled by the first heating plate 51 set at a relatively low temperature.
When the heat treatment is performed, the heat from the second heating plate 52 set at a relatively high temperature is absorbed or blocked by the buffer material 60, so that the heat is heated by the first heating plate 51 set at a relatively low temperature. The thermal effect on the wafer W being processed can be reduced. In addition, as described above, it is possible to open the damper 101 and exhaust when heating with the first heating plate 51, and to open and exhaust the damper 102 when heating with the second heating plate 52. This is particularly effective for this embodiment.

Next, a hot plate unit (LHP /
Still another embodiment of HHP) will be described with reference to FIG. Here, as shown in FIG. 8, two loading / unloading ports 56a and 56b for the wafer W are provided, and shutters 58a and 58b for closing them are provided. The loading / unloading port 56 a is provided at a height corresponding to the first heating plate 51, and the loading / unloading port 56 b is provided at a height corresponding to the second heating plate 52. Therefore, as described above, when the heat treatment is first performed on the first heating plate 51 set at a low temperature and then performed on the second heating plate 52 set at a high temperature, The wafer W is loaded and loaded and unloaded 5
6b, the lifting and lowering operation of the lift pins 54 can be reduced. Further, the wafer W after the completion of the heating process is unloaded from the loading / unloading port 56b while being loaded into the loading / unloading port 5b.
The wafer W before processing can be carried in from 6a, and the throughput can be further improved.

Note that the present invention is not limited to the above embodiment, and various modifications are possible. For example, in the above-described embodiment, the case where the relatively low-temperature heat treatment and the relatively high-temperature heat treatment are continuously performed after the application of the antireflection film (bottom layer) is described. The method of heating is applicable as long as heating is performed, and there is no limitation on the mode of heating, such as heating at a relatively high temperature and then heating at a relatively low temperature, or performing these alternately.

Further, in the above embodiment, the case where the present invention is applied to the hot plate unit incorporated in the resist coating / developing processing system has been described. However, the present invention is not limited to this, and heating is performed at different temperatures using a heating plate. The application is not limited to this. The substrate to be processed is not limited to a semiconductor wafer, but may be, for example, a liquid crystal display (LCD).
The present invention can be applied to the processing of other substrates such as a substrate for use.

[0063]

As described above, according to the present invention,
Since the substrate can be moved between the first and second heating plates, which are arranged in one processing chamber and heat-treat the substrate at relatively low and high temperatures, respectively, and can be heated by both these heating plates, When the substrate is subjected to the heat treatment at a high temperature and a low temperature, the transfer time of the substrate can be significantly reduced, and the throughput can be improved.

[Brief description of the drawings]

FIG. 1 is a plan view showing the overall configuration of a semiconductor wafer coating and developing system incorporating a hot plate unit according to an embodiment of the present invention.

FIG. 2 is a front view showing the overall configuration of a semiconductor wafer coating and developing system incorporating a hot plate unit according to an embodiment of the present invention.

FIG. 3 is a rear view showing the overall configuration of a semiconductor wafer coating and developing system incorporating a hot plate unit according to the embodiment of the present invention;

FIG. 4 is a schematic sectional view showing a hot plate unit according to one embodiment of the present invention in a state where a wafer is being heated by a first heating plate set at a relatively low temperature.

FIG. 5 is a schematic cross-sectional view showing a hot plate unit according to one embodiment of the present invention in a state where a wafer is being heated by a second heating plate set at a relatively high temperature.

FIG. 6 is a schematic cross-sectional view showing a hot plate unit according to another embodiment of the present invention in which a wafer is being heated by a first heating plate set at a relatively low temperature.

FIG. 7 is a schematic cross-sectional view showing a hot plate unit according to another embodiment of the present invention, in which a wafer is being heated by a second heating plate set at a relatively high temperature.

FIG. 8 is a schematic sectional view showing a hot plate unit according to still another embodiment of the present invention.

[Explanation of symbols]

 46; wafer transfer device 50; processing chamber 51; first heating plate 52; second heating plate 53; support member 54; lift pin 55; cylinder 56; Loading / unloading mechanisms 101, 102; Dampers 70, 70 '; Controller LHP / HHP; Hot plate unit W; Semiconductor wafer (substrate)

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Kazutoshi Yano 2655 Tsukure, Kikuyo-cho, Kikuchi-gun, Kumamoto Pref.

Claims (11)

[Claims] 1. A substrate processing apparatus for performing a heat treatment on a substrate, comprising: a treatment chamber for accommodating the substrate; and a heating chamber disposed opposite to the treatment chamber for heating the substrate at relatively low and high temperatures, respectively. A heat treatment apparatus comprising: first and second heating plates; and a moving unit that supports a substrate carried into a processing chamber and moves the substrate between the first and second plates. 2. The apparatus according to claim 1, further comprising control means for controlling said moving means such that said first and / or second heating plate heats the substrate based on a predetermined sequence. 3. The heat treatment apparatus according to claim 1. 3. The control means moves to a heating position by the first heating plate for heating the substrate at a relatively low temperature, performs a heat treatment on the substrate there, and then heats the substrate to a relatively high temperature. 3. The heat treatment apparatus according to claim 2, wherein the heating unit is moved to a heating position by the second heating plate, and the moving unit is controlled so as to perform a heat treatment there. 4. The first method for heating a substrate to a relatively low temperature.
Heating plate and the second heating to a relatively high temperature
4. The heating plate according to claim 1, wherein one of the heating plates is arranged on the upper side and the other is arranged on the lower side.
3. The heat treatment apparatus according to claim 1. 5. The apparatus according to claim 1, further comprising a buffer having a heat absorbing function or a heat insulating function, and a loading / unloading mechanism for loading / unloading the buffer between the first and second heating plates in the processing chamber. The heat treatment apparatus according to claim 1, wherein 6. A loading / unloading mechanism control means for controlling the loading / unloading mechanism such that the cushioning material is loaded or unloaded between the first and second heating plates based on a predetermined sequence. The heat treatment apparatus according to claim 5, wherein the heat treatment apparatus is provided. 7. The processing chamber according to claim 1, wherein the processing chamber has a plurality of loading / unloading ports for loading / unloading the substrate.
The heat treatment apparatus according to claim 6. 8. The apparatus according to claim 1, wherein said moving means has a plurality of lift pins for supporting and lowering the substrate.
The heat treatment apparatus according to claim 7. 9. A substrate processing method for performing a heat treatment on a substrate, wherein first and second heating plates for heating the substrate at relatively low and high temperatures, respectively, are disposed in the processing chamber so as to face each other. And a heat treatment method for the substrate carried into the processing chamber, wherein the heat treatment is performed on one of the first and second heating plates and then on the other. 10. The second heating plate, which moves to a heating position by the first heating plate for heating the substrate at a relatively low temperature, performs a heat treatment on the substrate there, and then heats the substrate to a relatively high temperature. The heat treatment method according to claim 9, wherein the heat treatment is performed by moving to a heating position. 11. A heat-absorbing or heat-insulating buffer is inserted between the first heating plate and the second heating plate during the heat treatment by the first heating plate. The heat treatment method according to claim 9 or 10, wherein