JP2001004881A - Semiconductor laser module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress deterioration in the coupling efficiency of a laser beam to an optical fiber, even if a camber is generated on a loading surface of a semiconductor laser element on a temperature control element. SOLUTION: In this semiconductor laser module 1, a radiating member 5 and an optical coupling means 7a are loaded directly or indirectly on a loading surface 3a of a temperature control element 3, and a semiconductor laser element 6 and the optical coupling means 7a are arranged on the same side relative to a first center line Lcpp crossing vertically with a tangent plane at the center of the loading surface 3a of the temperature control element 3 and/or a second center line passing through the center of the loading surface 3a of the temperature control element 3 and vertical to each of the first center line Lcpp and an axis showing the outgoing direction of a laser beam emitted from the semiconductor laser element 6, in the outgoing direction of the laser beam.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a semiconductor laser module.

[0002]

2. Description of the Related Art FIGS. 8 to 10 show examples of the configuration of a conventional semiconductor laser module. In the semiconductor laser module 1 shown in FIGS. 8 to 10, a Peltier cooler (temperature control element) 3, a base 4, a heat sink (heat dissipation member) 5, an LD chip (semiconductor laser element) 6 and an optical fiber 7 are provided in a package 2. It is stored.

The Peltier cooler 3 is provided on a bottom plate 2a of the package 2, and a base 4 is fixed substantially at the center of a mounting surface 3a on which an optical component such as an LD chip 6 is mounted. As shown, an LD chip 6 is fixed to the base 4 via a heat sink 5, and an optical fiber 7 is fixed to the base 4 via two fixing components 8. At this time, the optical fiber 7 is an optical fiber with a lens in which a lens portion 7a serving as an optical coupling means is formed at one end facing the LD chip 6,
A ferrule 7b is attached at a position corresponding to the fixed component 8. Further, the other end of the optical fiber 7 is drawn out from a drawing part 2 c provided on the peripheral wall 2 b of the package 2.

Here, the semiconductor laser module 1 has a temperature sensor (not shown) for detecting the temperature of the mounting surface 3a of the Peltier cooler 3 at an appropriate position in the package 2. The operation of the Peltier cooler 3 of the semiconductor laser module 1 is externally controlled by control means (not shown) based on the temperature detected by the temperature sensor.

[0005] In addition, the package 2 usually has a lid 2d attached to the upper part of the peripheral wall 2b as shown in FIG.
FIG. 9 shows a state where the lid is removed to show the inside. This is the same in FIGS. 2 and 7 described below.

[0006]

Incidentally, in the conventional semiconductor laser module 1, a Peltier device is used for the purpose of stabilizing the thermal operation characteristics of the LD chip 6 due to a change in environmental temperature and heat generation of the LD chip 6 due to the operation. The temperature of the LD chip 6 is controlled to a predetermined temperature by the cooler 3.
The temperature is controlled so that the mounting surface 3a on the upper surface of the Peltier cooler 3 on which the D chip 6 is mounted has a predetermined temperature.

At this time, if the temperature of the mounting surface 3a rises due to, for example, the heat generated by the LD chip 6, the Peltier cooler 3 radiates the heat to the lower surface, and the mounting surface 3a
At a predetermined temperature. Therefore, in the Peltier cooler 3, a large temperature difference occurs between the upper mounting surface 3a and the lower surface. Therefore, in the Peltier cooler 3, a minute expansion or contraction of a component member occurs internally due to a change in temperature of the Peltier cooler itself. As a result, in the Peltier cooler 3, as shown in FIG. 10, the mounting surface 3a on which the LD chip 6 is mounted has a change in flatness such as a small warpage having a height difference of about sub-μm (hereinafter simply referred to as warpage). ) Occurs.

Here, FIG. 10 exaggerates the warp of the Peltier cooler 3 and the base 4 for convenience of explanation.
The same applies to FIGS. 3 and 4A described below. When such a warp occurs, the optical coupling state between the LD chip 6 and the optical coupling unit of the semiconductor laser module 1 deteriorates. In particular, when such a warp occurs in the emission direction of the laser light, the semiconductor laser module 1 reduces the coupling efficiency of the laser light to the optical fiber 7 and cannot output appropriate optical power to the optical fiber 7. The problem arises.

SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and it is possible to suppress a decrease in coupling efficiency of a laser beam to an optical fiber even if a surface on which a semiconductor laser device is mounted is warped in a temperature control device. It is an object of the present invention to provide a semiconductor laser module that can be used.

[0010]

According to the present invention, there is provided a semiconductor laser device, a temperature control device for controlling a temperature of the semiconductor laser device to a predetermined temperature, and a semiconductor laser device and a temperature control device. A heat radiation member disposed between the semiconductor laser element and a semiconductor laser module containing an optical fiber for guiding laser light emitted from the semiconductor laser element to the outside through an optical coupling means in a package. The heat radiation member and the optical coupling unit are mounted directly or indirectly on the mounting surface of the temperature control element, and the semiconductor laser element and the optical coupling unit are connected at the center of the mounting surface of the temperature control element. A first center line perpendicular to a plane and / or a center line of the mounting surface of the temperature control element, the first center line and the semiconductor laser element; Relates second centerline perpendicular to each of the axes representing the emission direction of the laser beam emitted from,
The configuration is such that they are arranged on the same side in the emission direction of the laser light.

In order to achieve the above object, according to the present invention, there is provided a semiconductor laser device, a temperature control device for controlling the temperature of the semiconductor laser device to a predetermined temperature, and a semiconductor laser device disposed between the semiconductor laser device and the temperature control device. A semiconductor laser module in which a heat radiating member that radiates heat of the semiconductor laser element and an optical fiber that guides a laser beam emitted from the semiconductor laser element to the outside through an optical coupling unit are housed in a package. The member and the optical coupling unit are mounted directly or indirectly on the mounting surface of the temperature control element, and the semiconductor laser element and the optical coupling unit are
By a light beam that intersects perpendicularly to a tangent plane immediately below the semiconductor laser element on the mounting surface of the temperature control element, an axis representing the emission direction of laser light emitted from the semiconductor laser element is mounted on the mounting surface of the temperature control element. Considering a line segment connecting two points where a projected line image at the time of projection and a contour line indicating the contour of the mounting surface intersect, and a midpoint of the line segment, the semiconductor laser element and the When the light coupling means is projected onto the mounting surface, the projected image of the semiconductor laser element and the projected image of the light coupling means are located on the projection line image, and with respect to the midpoint of the line segment, The configuration is such that they are located on the same side.

Preferably, the semiconductor laser device is arranged closer to the center of the mounting surface of the temperature control device than the optical coupling means. Preferably, the optical coupling means is mounted on the temperature control element via a base, and a part of the base on which the optical coupling means is mounted extends from the mounting surface.

[0013] More preferably, the optical coupling means includes a portion formed at an end of the optical fiber, the end face of which the laser light emitted from the semiconductor laser device is incident is formed in a lens shape. Here, the center of the mounting surface of the temperature control element referred to in the present specification refers to the intersection of diagonal lines when the mounting surface is square, and the center of the circle when the mounting surface is circular. . When the mounting surface has a shape other than a quadrangle, such as a polygon, X
The point of intersection of the bisector at each length in the axial direction and the Y-axis direction is referred to.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below in detail with reference to FIGS. Here, the semiconductor laser module of the present invention has the same configuration as the conventional semiconductor laser module except that the position of the LD chip and the optical coupling means are different, so the same reference numerals are used for the same components. The duplicate description will be omitted.

FIGS. 1 to 3 show a semiconductor laser module 1 according to a first embodiment. The center line Lcpp shown in FIGS. 1 to 3 is a straight line perpendicular to the tangent plane PT (see FIG. 3) at the center O of the mounting surface 3a in the Peltier cooler 3. The center line Lctr includes a center line Lcpp passing through the center O of the mounting surface 3a and an axis AL (hereinafter, simply referred to as an “optical axis of the laser beam”) indicating the emission direction of the laser beam emitted from the LD chip 6. It is a vertical straight line. Here, the center of the mounting surface 3a refers to a contour Sa, described later, of the mounting surface 3a.
It refers to the intersection of diagonal lines in the square formed by Sb, Sc, and Sd.

Semiconductor laser module 1 of the present embodiment
Are, as shown in FIGS. 1 to 3, these center lines Lcpp
And / or Lctr, the LD chip 6 and the lens portion 7a of the optical fiber 7 as the optical coupling means are arranged on the same side, that is, in the present embodiment, on the right side of the center lines Lcpp and Lctr in the drawing. There is a feature. The center line Lctr is perpendicular to a plane including the optical axis AL of the laser beam and the center line Lcpp.

The characteristics of the semiconductor laser module 1 according to this embodiment will be described from another viewpoint. FIG. 4 (a),
As shown in (b), at a point P on the mounting surface 3a located immediately below the center of the LD chip 6, consider a virtual light beam Q perpendicular to the tangent plane PT contacting the mounting surface 3a. At this time, an image obtained by projecting the optical axis AL of the laser beam on the mounting surface 3a of the Peltier cooler 3 by the light beam Q is a projected image IAL.
And Then, of the projected image IAL and the contour lines Sa, Sb, Sc, and Sd relating to the mounting surface 3a of the Peltier cooler 3,
Consider a line segment V connecting two points T and U where two contour lines Sa and Sb intersect, and a middle point W of the line segment V. Also, consider a projected image I6 of the LD chip 6 and a projected image I7 of the optical fiber 7 when the LD chip 6 and the optical fiber 7 including the lens portion 7a are projected on the mounting surface 3a by the light beam Q.

Then, in the semiconductor laser module 1, the projected image I6 of the LD chip 6 and the projected image I7 of the optical fiber 7 are located on the projected image IAL, and are on the same side (here, the midpoint W of the line segment V). In the drawing, the LD chip 6 and the lens portion 7a are arranged so as to be positioned on the right side in the drawing. In other words, in the semiconductor laser module 1, as shown in FIGS. 4A and 4B, the emission point of the laser light on the emission end face of the LD chip 6 and the lens portion 7
a line segment M connecting the laser light receiving point on the end face
Is projected onto the mounting surface 3a of the Peltier cooler 3 with the light beam Q, when the line segment V is divided by the midpoint W, it is completely included on one of the sides.

Semiconductor laser module 1 of this embodiment
Then, as shown in FIG. 4B, the optical axis Aop of the optical fiber 7 is shifted by the light beam Q to the mounting surface 3a of the Peltier cooler 3.
The optical fiber 7 is arranged so as to coincide with the projection image IAL when projected onto the optical fiber 7. However, for example, in order to prevent return light from the end face of the optical fiber 7 to the LD chip 6, the optical axis Aop is shifted by the light beam Q to the mounting surface 3a of the Peltier cooler 3.
When projecting on, so as not to match the projected image IAL,
The LD chip 6 is moved so that the relative position between the optical axis AL of the laser beam emitted from the LD chip 6 and the optical axis Aop of the optical fiber 7 slightly deviates in a plane parallel to the tangent plane PT at the point P.
And the optical fiber 7 may be arranged.

The semiconductor laser module 1 uses the Peltier cooler 3 in which the outlines Sa, Sb, Sc, and Sd of the mounting surface 3a draw a rectangle. For this reason, in the semiconductor laser module 1, the center point W coincides with the center O of the mounting surface 3a in the Peltier cooler 3, and the center lines Lcpp, Lc
tr passes through the center O and the midpoint W. Therefore, the description about the positional relationship between the center O and the midpoint W and the LD chip 6 and the lens portion 7a is the same as the description about the positional relationship between the center lines Lcpp and Lctr and the LD chip 6 and the lens portion 7a.
Therefore, only the positional relationship between the center lines Lcpp and Lctr and the LD chip 6 and the lens portion 7a will be described, and description of the positional relationship between the center O and the midpoint W and the LD chip 6 and the lens portion 7a will be omitted.

In the semiconductor laser module 1, the LD
The reason why the effects of the present invention are exhibited by arranging the chip 6 and the lens portion 7a as described above will be described below. FIG. 5 shows the warpage of the mounting surface 3a of the Peltier cooler 3,
FIG. 3 is a perspective view (three-dimensional display) showing measurement results obtained by measuring with a contact type surface roughness meter at room temperature (about 25 ° C.).

As shown in FIG. 5, the mounting surface 3a of the Peltier cooler 3 is warped due to the influence of temperature and the like.
The warp at the center O is particularly large. Also, an arbitrary 2 on the two contour lines Sa and Sb of the Peltier cooler 3
When the line segment V is formed by connecting the points T and U, the largest warpage on the line segment V is the middle point W of the line segment V. Accordingly, on either side of the midpoint W on the line segment V, the projected image I6 of the LD chip 6 and the optical fiber 7 including the lens portion 7a
The LD chip 6 and the lens portion 7a are arranged so that the projected image I7 of the above comes. Then, the semiconductor laser module 1
Can avoid the influence of a large warp at the middle point W as compared with the case where the LD chip 6 and the lens portion 7a are arranged on both sides across the middle point W.

For example, as shown in FIG. 3, in the semiconductor laser module 1 of this embodiment, the Peltier cooler 3
It is assumed that the mounting surface 3a has a warp in the laser light emission direction as in the case of FIG. At this time, the angle at which the optical axis AL of the laser beam emitted from the LD chip 6 intersects with the optical axis Aop of the optical fiber 7 is defined as an intersection angle θ1, and the optical axis AL in a plane including the optical axes AL and Aop. , Aop, the radius of curvature when considering an arc tangent to each of them is R1 as shown in FIG.

On the other hand, in the conventional semiconductor laser module 1 shown in FIG.
Is warped. At this time, the LD chip 6
The angle formed by the intersection of the optical axis AL of the laser beam emitted from the optical axis and the optical axis Aop of the optical fiber 7 is defined as an intersection angle θ2, and similarly, in the plane including the optical axes AL and Aop, the optical axes AL and Aop
Let R2 be the radius of curvature when considering an arc that contacts each of the above.

Here, it is assumed that the semiconductor laser module shown in FIG. 3 and the semiconductor laser module shown in FIG. 10 have the same warp shape of the Peltier cooler 3 at the same ambient temperature. Then, the distance α1 between the end faces (see FIG. 3) and the distance α2 between the end faces (see FIG. 10) between the LD chip 6 and the lens portion 7a are both curvature radii R1, R2.
And is given by the following approximation: α1 = R1 · θ1 (Equation 1) α2 = R2 · θ2 (Equation 2)

Here, the distances α1 and α2 between the end faces are designed to be constant values (α1 = α2) in order to secure the optical coupling efficiency between the LD chip 6 and the lens portion 7a. Therefore, the following equation is obtained from Equations 1 and 2. R1 · θ1 = R2 · θ2 (Equation 3) At this time, in the semiconductor laser module 1 of FIG.
The chip 6 and the lens portion 7a are connected to the center line Lcp of the mounting surface 3a.
It is arranged on the same side with respect to p and Lctr. Therefore, the semiconductor laser module 1 of FIG. 3 can avoid the influence of the large warpage on the center lines Lcpp and Lctr shown in FIGS. On the other hand, the conventional semiconductor laser module 1
Is, as shown in FIG. 10, the LD chip 6 and the lens portion 7a.
Are arranged so as to sandwich the center lines Lcpp and Lctr of the mounting surface 3a, and therefore are greatly affected by the warpage on the center lines Lcpp and Lctr.

Accordingly, since the radius of curvature R2 is smaller than the radius of curvature R1 (R1> R2), θ1 <θ2 is obtained from the relationship of Expression 3. Thus, in the semiconductor laser module 1 of the present embodiment, the optical axis AL of the laser beam
The intersection angle θ1 between the optical axis Aop of the optical fiber 7 and the optical axis AL of the laser light in the conventional semiconductor laser module 1 is
Is smaller than the intersection angle θ2 between the optical axis Aop of the optical fiber 7 and the optical axis Aop.

In addition, it has been assumed above that the distances α1, α2 between the end faces are the same. However, in practice, the distance α1 between the end faces in the semiconductor laser module of the present embodiment is not affected by the large warpage at the center O of the mounting surface 3a of the Peltier cooler 3, and is therefore larger than the end face distance α2 in the conventional semiconductor laser module. It can also be said that the temperature dependency in which the distance between the end faces fluctuates with the temperature is small.

For the reasons described above, when the LD chip 6 and the lens portion 7a are arranged on the right side of the center lines Lcpp and Lctr in the drawing in the present embodiment, the laser light emitted from the LD chip 6 The effect of the present invention that a decrease in coupling efficiency when coupling to the portion 7a can be suppressed can be exhibited. The semiconductor laser module 1 of the present embodiment may be arranged on the left side in the figure as long as the LD chip 6 and the lens portion 7a are on the same side with respect to the center lines Lcpp and Lctr on the mounting surface 3a of the Peltier cooler 3. .

However, when the LD chip 6 is disposed on the mounting surface 3a on the upper surface of the Peltier cooler 3 on the right side of the center lines Lcpp and Lctr, as in this embodiment, that is, the Peltier cooler 3 is disposed on the upper side than the lens portion 7a. Of the mounting surface 3a closer to the center O of the mounting surface 3a,
The heat generated by the LD chip 6 can be diffused to the entire mounting surface 3a on the upper surface of the Peltier cooler 3. Therefore, the heat dissipation by the Peltier cooler 3 is improved, and high output characteristics and light output stability as a semiconductor laser module can be secured. At the same time, it is possible to obtain an effect that the LD chip 6 and the optical fiber 7 can be arranged on the mounting surface 3a of the Peltier cooler 3 with good space efficiency.

In this embodiment, the optical coupling means optically coupled to the LD chip 6 is a lens portion 7a in which the laser light incident end face of the optical fiber 7 is formed in a lens shape, as shown in FIGS. is there. When such a configuration is adopted in which the lens portion 7a on the end face of the optical fiber and the LD chip 6 are directly optically coupled, the arrangement accuracy of these optical components must be very high as compared with optical coupling via a single lens. (It is said that an arrangement accuracy of about 10 times is necessary). Therefore, in the case of a semiconductor laser module having a configuration in which the lens portion 7a and the LD chip 6 are directly optically coupled to each other, the present invention that can reduce the influence of the warpage of the Peltier cooler 3 and realize high placement accuracy between optical components. Very effectively applied.

In this embodiment, the base 4 on which the heat sink 5 and the optical fiber 7 are mounted is partially
More specifically, part of the portion where the optical fiber 7 is mounted is
As shown in FIG. 3, the length L extends rightward from the mounting surface 3a along the direction of the optical axis Aop and is fixed to the mounting surface 3a. Therefore, the semiconductor laser module 1 can secure a sufficient length for fixing the optical fiber 7 to the base 4.

Next, a semiconductor laser module according to another embodiment of the present invention will be described with reference to FIGS. In the semiconductor laser module 1 shown in FIGS. 6 and 7, the LD chip 6 is mounted on the mounting surface 3 of the Peltier cooler 3.
It is arranged on the right side in the figure with respect to the center lines Lcpp and Lctr of a. At the same time, a ferrule 7c is attached to one end of the optical fiber 7, and the ferrule 7c is attached to the peripheral wall 2b of the package 2.
And holding the LD chip 6 so as to face the LD chip 6, and pull out the other end from the holding portion 2 e provided on the peripheral wall 2 b of the package 2. The optical coupling means between the LD chip 6 and the optical fiber 7 is a spherical lens 1 provided on the base 4 via the fixing component 11 adjacent to the heat sink 5.
Use 2. In this case, in addition to the spherical lens 12, various optical lens components such as an aspheric lens or a rod lens can be used.

The semiconductor laser module 1 includes a spherical lens 1
Even with the use of 2, the laser light emitted from the LD chip 6 is condensed by the spherical lens unit 12 and coupled to the optical fiber 7, so that a decrease in coupling efficiency can be suppressed.
In each of the above embodiments, the base 4 is placed on the Peltier cooler 3.
Is fixed, and the heat sink 5 and the optical fiber 7 having the lens portion 7a as the optical coupling means are provided on the Peltier cooler 3 via the fixed component 8, or the spherical lens 12 as the optical coupling means is provided on the Peltier cooler 3 via the fixed component 11. The semiconductor laser module mounted indirectly has been described. However, since the base 4 is used as an auxiliary component for mounting various components on the mounting surface 3a of the heat equalizing plate and the Peltier cooler 3, the base 4 is not necessarily required. The optical fiber 7 having a certain lens portion 7a may be directly mounted via the fixed component 8, or the spherical lens 12 as the optical coupling means may be directly mounted via the fixed component 11.

In each of the above-described embodiments, an example is shown in which one set of the LD chip 6 and the lens portion 7a are mounted on the Peltier cooler 3. However, in the present invention, these L chips 6 are mounted on the Peltier cooler 3.
The present invention is also applicable to a device in which a plurality of sets of the D chip 6 and the lens portion 7a are mounted. Also, the mounting surface 3a of the Peltier cooler 3
Is rectangular in the present embodiment, but the mounting surface 3a
May be any shape such as a circle or a polygon other than a square.

Further, the warpage of the Peltier cooler 3 is affected by the material of the components of the Peltier cooler 3, the material of the package and other members. For this reason, depending on these materials and the temperature environment, the Peltier cooler may warp in the opposite direction (convex downward) to that shown in FIG. The same effect can be obtained.

[0037]

According to the first to fifth aspects of the present invention, in the temperature control element, even if the mounting surface of the semiconductor laser element warps, a decrease in the coupling efficiency of the laser light to the optical fiber can be suppressed. A semiconductor laser module can be provided.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a first embodiment of a semiconductor laser module of the present invention.

FIG. 2 is a plan view of the semiconductor laser module of FIG. 1;

FIG. 3 is an enlarged side view showing the arrangement of the semiconductor laser element and the optical control means with respect to the center line of the temperature control element in the semiconductor laser module of FIG. 1;

FIGS. 4A and 4B are explanatory diagrams illustrating the arrangement of the semiconductor laser element and the optical coupling unit on the temperature control element from a viewpoint different from FIG. 3, wherein FIG. 4A is a side view and FIG.

FIG. 5 is a perspective view showing the result of measuring the warpage of the Peltier cooler.

FIG. 6 is a sectional view showing another embodiment of the semiconductor laser module of the present invention.

FIG. 7 is a plan view of the semiconductor laser module of FIG. 6;

FIG. 8 is a sectional view of a conventional semiconductor laser module.

FIG. 9 is a plan view of the semiconductor laser module of FIG. 8;

FIG. 10 is an enlarged side view showing the arrangement of the semiconductor laser device and the optical control means with respect to the center line of the temperature control device in the conventional semiconductor laser module of FIG. 8;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor laser module 2 Package 3 Peltier cooler (temperature control element) 4 Base 5 Heat sink (heat dissipation member) 6 LD chip (semiconductor laser element) 7 Optical fiber 7a Lens part (optical coupling means) 8 Fixed component 11 Fixed component 12 Spherical lens AL Optical axis (of laser light) Aop Optical axis (of optical fiber) Lcpp Center line (first) Lctr Center line (second) θ1, θ2 Intersection angle (between optical axis AL and optical axis Aop)

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Yuichiro Irie 2-6-1 Marunouchi, Chiyoda-ku, Tokyo Inside Furukawa Electric Co., Ltd. (72) Inventor Takeo Shimizu 2-6-1 Marunouchi, Chiyoda-ku, Tokyo F-term in Furukawa Electric Co., Ltd. (reference) 2H037 BA02 CA08 DA03 DA04 DA06 5F073 AB28 FA07 FA23 FA25

Claims (5)

[Claims] 1. A semiconductor laser device, a temperature control device for controlling a temperature of the semiconductor laser device to a predetermined temperature, and a heat radiator disposed between the semiconductor laser device and the temperature control device for radiating heat of the semiconductor laser device. A semiconductor laser module in which a member and an optical fiber for guiding a laser beam emitted from the semiconductor laser element to the outside via an optical coupling unit are housed in a package, wherein the heat dissipation member and the optical coupling unit are The semiconductor laser device and the optical coupling unit are mounted directly or indirectly on the mounting surface of the temperature control element, and the first center line perpendicularly intersecting a tangent plane at the center of the mounting surface of the temperature control element and / or The line between the first center line passing through the center of the mounting surface of the temperature control element and the axis indicating the emission direction of the laser light emitted from the semiconductor laser element. It relates second centerline perpendicular to, respectively, the semiconductor laser module, characterized in that in the emission direction of the laser beam, are arranged on the same side. 2. A semiconductor laser device, a temperature control device for controlling the temperature of the semiconductor laser device to a predetermined temperature, and a heat radiator disposed between the semiconductor laser device and the temperature control device for radiating heat of the semiconductor laser device. A semiconductor laser module in which a member and an optical fiber for guiding a laser beam emitted from the semiconductor laser element to the outside via an optical coupling unit are housed in a package, wherein the heat dissipation member and the optical coupling unit are The semiconductor laser device and the optical coupling unit are mounted directly or indirectly on the mounting surface of the temperature control element, and the light beam that intersects perpendicularly with a tangent plane that is in contact with the mounting surface of the temperature control element immediately below the semiconductor laser device. A projection line obtained by projecting an axis representing an emission direction of laser light emitted from the semiconductor laser element onto a mounting surface of the temperature control element. Considering a line segment connecting two points where a contour line indicating the contour of the mounting surface intersects and a midpoint of the line segment, the light beam bundle mounts the semiconductor laser element and the optical coupling unit. When projected on a plane, the projected image of the semiconductor laser element and the projected image of the optical coupling means are located on the projected line image, and are located on the same side with respect to the midpoint of the line segment. A semiconductor laser module, wherein the semiconductor laser module is disposed in a semiconductor laser module. 3. The semiconductor laser module according to claim 1, wherein said semiconductor laser element is disposed closer to a center of a mounting surface of said temperature control element than said optical coupling means. 4. The optical coupling means is mounted on the temperature control element via a base, and a part of the base on which the optical coupling means is mounted extends from the mounting surface. The semiconductor laser module according to claim 1. 5. An optical fiber according to claim 1, wherein said optical coupling means includes a portion formed at an end of said optical fiber and having an end face formed in a lens shape for receiving a laser beam emitted from said semiconductor laser element. 5. The semiconductor laser module according to any one of 4.