JP2000508116A - 多層金属ポリマ構造を使用するｒｆトランス - Google Patents
多層金属ポリマ構造を使用するｒｆトランスInfo
- Publication number
- JP2000508116A JP2000508116A JP9517392A JP51739297A JP2000508116A JP 2000508116 A JP2000508116 A JP 2000508116A JP 9517392 A JP9517392 A JP 9517392A JP 51739297 A JP51739297 A JP 51739297A JP 2000508116 A JP2000508116 A JP 2000508116A
- Authority
- JP
- Japan
- Prior art keywords
- transformer
- layer
- metal
- polymer
- coils
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 title claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 37
- 229920000642 polymer Polymers 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000012212 insulator Substances 0.000 claims abstract description 14
- 239000003989 dielectric material Substances 0.000 claims abstract description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical group C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 18
- 230000008878 coupling Effects 0.000 abstract description 19
- 238000010168 coupling process Methods 0.000 abstract description 19
- 238000005859 coupling reaction Methods 0.000 abstract description 19
- 239000010409 thin film Substances 0.000 abstract description 10
- 239000011521 glass Substances 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 6
- 230000001939 inductive effect Effects 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 239000002861 polymer material Substances 0.000 abstract 1
- 238000004804 winding Methods 0.000 description 22
- 238000004519 manufacturing process Methods 0.000 description 15
- 239000003990 capacitor Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 230000008901 benefit Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910017813 Cu—Cr Inorganic materials 0.000 description 1
- 241000252233 Cyprinus carpio Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000005098 blood-cerebrospinal fluid barrier Anatomy 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F19/00—Fixed transformers or mutual inductances of the signal type
- H01F19/04—Transformers or mutual inductances suitable for handling frequencies considerably beyond the audio range
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Coils Or Transformers For Communication (AREA)
- Semiconductor Integrated Circuits (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US708995P | 1995-10-31 | 1995-10-31 | |
| US60/007,089 | 1995-10-31 | ||
| US61082596A | 1996-03-07 | 1996-03-07 | |
| US08/610,825 | 1996-03-07 | ||
| PCT/US1996/016876 WO1997016836A1 (en) | 1995-10-31 | 1996-10-21 | Rf transformer using multilayer metal polymer structures |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000508116A true JP2000508116A (ja) | 2000-06-27 |
Family
ID=26676489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9517392A Pending JP2000508116A (ja) | 1995-10-31 | 1996-10-21 | 多層金属ポリマ構造を使用するｒｆトランス |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0858666A1 (ko) |
| JP (1) | JP2000508116A (ko) |
| KR (1) | KR100452022B1 (ko) |
| AU (1) | AU7518496A (ko) |
| WO (1) | WO1997016836A1 (ko) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008061236A (ja) * | 2006-08-28 | 2008-03-13 | Avago Technologies General Ip (Singapore) Private Ltd | 改善されたガルバニックアイソレータ |
| US7852186B2 (en) | 2006-08-28 | 2010-12-14 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Coil transducer with reduced arcing and improved high voltage breakdown performance characteristics |
| US7948067B2 (en) | 2009-06-30 | 2011-05-24 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Coil transducer isolator packages |
| US8061017B2 (en) | 2006-08-28 | 2011-11-22 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Methods of making coil transducers |
| US8093983B2 (en) | 2006-08-28 | 2012-01-10 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Narrowbody coil isolator |
| US8237534B2 (en) | 2007-05-10 | 2012-08-07 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Miniature transformers adapted for use in galvanic isolators and the like |
| US8258911B2 (en) | 2008-03-31 | 2012-09-04 | Avago Technologies ECBU IP (Singapor) Pte. Ltd. | Compact power transformer components, devices, systems and methods |
| US8385043B2 (en) | 2006-08-28 | 2013-02-26 | Avago Technologies ECBU IP (Singapoare) Pte. Ltd. | Galvanic isolator |
| US8427844B2 (en) | 2006-08-28 | 2013-04-23 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Widebody coil isolators |
| JP2013115421A (ja) * | 2011-11-25 | 2013-06-10 | Samsung Electro-Mechanics Co Ltd | インダクタ及びその製造方法 |
| US9019057B2 (en) | 2006-08-28 | 2015-04-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Galvanic isolators and coil transducers |
| US9105391B2 (en) | 2006-08-28 | 2015-08-11 | Avago Technologies General Ip (Singapore) Pte. Ltd. | High voltage hold-off coil transducer |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6249039B1 (en) * | 1998-09-10 | 2001-06-19 | Bourns, Inc. | Integrated inductive components and method of fabricating such components |
| US6384461B1 (en) * | 1999-10-15 | 2002-05-07 | Xerox Corporation | Dual dielectric structure for suppressing lateral leakage current in high fill factor arrays |
| US20020170677A1 (en) * | 2001-04-07 | 2002-11-21 | Tucker Steven D. | RF power process apparatus and methods |
| DE60238069D1 (de) | 2001-08-14 | 2010-12-02 | Nxp Bv | Elektronisches bauelement und verfahren zur herstellung |
| US20100301987A1 (en) * | 2009-05-27 | 2010-12-02 | Stmicroelectronics S.A. | Millimeter wave transformer with a high transformation factor and a low insertion loss |
| US8552829B2 (en) * | 2010-11-19 | 2013-10-08 | Infineon Technologies Austria Ag | Transformer device and method for manufacturing a transformer device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2897091B2 (ja) * | 1992-07-09 | 1999-05-31 | 株式会社村田製作所 | ライントランス |
-
1996
- 1996-10-21 WO PCT/US1996/016876 patent/WO1997016836A1/en active IP Right Grant
- 1996-10-21 EP EP96937708A patent/EP0858666A1/en not_active Withdrawn
- 1996-10-21 JP JP9517392A patent/JP2000508116A/ja active Pending
- 1996-10-21 AU AU75184/96A patent/AU7518496A/en not_active Abandoned
- 1996-10-21 KR KR10-1998-0703513A patent/KR100452022B1/ko not_active IP Right Cessation
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8093983B2 (en) | 2006-08-28 | 2012-01-10 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Narrowbody coil isolator |
| US7791900B2 (en) * | 2006-08-28 | 2010-09-07 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Galvanic isolator |
| US7852186B2 (en) | 2006-08-28 | 2010-12-14 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Coil transducer with reduced arcing and improved high voltage breakdown performance characteristics |
| JP4654228B2 (ja) * | 2006-08-28 | 2011-03-16 | アバゴ・テクノロジーズ・ジェネラル・アイピー（シンガポール）プライベート・リミテッド | 改善されたガルバニックアイソレータ |
| JP2008061236A (ja) * | 2006-08-28 | 2008-03-13 | Avago Technologies General Ip (Singapore) Private Ltd | 改善されたガルバニックアイソレータ |
| US8061017B2 (en) | 2006-08-28 | 2011-11-22 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Methods of making coil transducers |
| US9019057B2 (en) | 2006-08-28 | 2015-04-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Galvanic isolators and coil transducers |
| US8385043B2 (en) | 2006-08-28 | 2013-02-26 | Avago Technologies ECBU IP (Singapoare) Pte. Ltd. | Galvanic isolator |
| US8385028B2 (en) | 2006-08-28 | 2013-02-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Galvanic isolator |
| US8427844B2 (en) | 2006-08-28 | 2013-04-23 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Widebody coil isolators |
| US9105391B2 (en) | 2006-08-28 | 2015-08-11 | Avago Technologies General Ip (Singapore) Pte. Ltd. | High voltage hold-off coil transducer |
| US8237534B2 (en) | 2007-05-10 | 2012-08-07 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Miniature transformers adapted for use in galvanic isolators and the like |
| US8258911B2 (en) | 2008-03-31 | 2012-09-04 | Avago Technologies ECBU IP (Singapor) Pte. Ltd. | Compact power transformer components, devices, systems and methods |
| US7948067B2 (en) | 2009-06-30 | 2011-05-24 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Coil transducer isolator packages |
| JP2013115421A (ja) * | 2011-11-25 | 2013-06-10 | Samsung Electro-Mechanics Co Ltd | インダクタ及びその製造方法 |
| US9659708B2 (en) | 2011-11-25 | 2017-05-23 | Samsung Electro-Mechanics Co., Ltd. | Method for manufacturing an inductor |
Also Published As
| Publication number | Publication date |
|---|---|
| KR19990067493A (ko) | 1999-08-25 |
| EP0858666A1 (en) | 1998-08-19 |
| WO1997016836A1 (en) | 1997-05-09 |
| KR100452022B1 (ko) | 2004-12-14 |
| AU7518496A (en) | 1997-05-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050419 |
|
| A524 | Written submission of copy of amendment under article 19 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A524 Effective date: 20050719 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20060104 |