JP2000504430A - 磁界検出装置 - Google Patents
磁界検出装置Info
- Publication number
- JP2000504430A JP2000504430A JP10525393A JP52539398A JP2000504430A JP 2000504430 A JP2000504430 A JP 2000504430A JP 10525393 A JP10525393 A JP 10525393A JP 52539398 A JP52539398 A JP 52539398A JP 2000504430 A JP2000504430 A JP 2000504430A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- current
- sensing
- magnetoresistive
- ferromagnetic layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 75
- 239000004020 conductor Substances 0.000 claims abstract description 62
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 29
- 230000001154 acute effect Effects 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 238000001514 detection method Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- 230000005415 magnetization Effects 0.000 description 13
- 239000013598 vector Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 9
- 230000000903 blocking effect Effects 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 230000005290 antiferromagnetic effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910015136 FeMn Inorganic materials 0.000 description 1
- 229910002555 FeNi Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 241000209140 Triticum Species 0.000 description 1
- 235000021307 Triticum Nutrition 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005324 grain boundary diffusion Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
- G11B5/397—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read with a plurality of independent magnetoresistive active read-out elements for respectively transducing from selected components
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP96203430.2 | 1996-12-04 | ||
| EP96203430 | 1996-12-04 | ||
| PCT/IB1997/001438 WO1998025155A2 (en) | 1996-12-04 | 1997-11-13 | Device for detecting a magnetic field |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000504430A true JP2000504430A (ja) | 2000-04-11 |
| JP2000504430A5 JP2000504430A5 (cg-RX-API-DMAC7.html) | 2005-08-11 |
Family
ID=8224659
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10525393A Ceased JP2000504430A (ja) | 1996-12-04 | 1997-11-13 | 磁界検出装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6075361A (cg-RX-API-DMAC7.html) |
| EP (1) | EP0880711B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP2000504430A (cg-RX-API-DMAC7.html) |
| DE (1) | DE69736463T2 (cg-RX-API-DMAC7.html) |
| WO (1) | WO1998025155A2 (cg-RX-API-DMAC7.html) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3623366B2 (ja) * | 1998-07-17 | 2005-02-23 | アルプス電気株式会社 | 巨大磁気抵抗効果素子を備えた磁界センサおよびその製造方法と製造装置 |
| FR2787197B1 (fr) * | 1998-12-11 | 2001-02-23 | Thomson Csf | Capteur de champ magnetique a magnetoresistance geante |
| DE19948026B4 (de) * | 1999-10-06 | 2009-06-10 | Robert Bosch Gmbh | Schaltung und Verfahren zur Feststellung eines magnetischen Feldes |
| US6538437B2 (en) * | 2000-07-11 | 2003-03-25 | Integrated Magnetoelectronics Corporation | Low power magnetic anomaly sensor |
| FR2830621B1 (fr) | 2001-10-09 | 2004-05-28 | Commissariat Energie Atomique | Structure pour capteur et capteur de champ magnetique |
| US7046117B2 (en) * | 2002-01-15 | 2006-05-16 | Honeywell International Inc. | Integrated magnetic field strap for signal isolator |
| DE10213941A1 (de) * | 2002-03-28 | 2003-10-30 | Bosch Gmbh Robert | Sensorelement und Gradiometeranordnung, deren Verwendung zum Messen von Magnetfeldgradienten und Verfahren hierzu |
| KR100462792B1 (ko) * | 2002-08-31 | 2004-12-20 | 한국과학기술연구원 | 교환바이어스형 스핀밸브를 이용한 브리지센서 제조방법 |
| US20100001723A1 (en) * | 2004-12-28 | 2010-01-07 | Koninklijke Philips Electronics, N.V. | Bridge type sensor with tunable characteristic |
| US20070121254A1 (en) * | 2005-11-29 | 2007-05-31 | Honeywell International Inc. | Protective and conductive layer for giant magnetoresistance |
| US8242776B2 (en) * | 2008-03-26 | 2012-08-14 | Everspin Technologies, Inc. | Magnetic sensor design for suppression of barkhausen noise |
| US10809320B2 (en) | 2015-04-29 | 2020-10-20 | Everspin Technologies, Inc. | Magnetic field sensor with increased SNR |
| US9910106B2 (en) * | 2015-04-29 | 2018-03-06 | Everspin Technologies, Inc. | Magnetic field sensor with increased linearity |
| CN110007255B (zh) * | 2017-12-21 | 2021-06-29 | 爱盛科技股份有限公司 | 磁场感测装置 |
| JP7505684B2 (ja) | 2021-10-06 | 2024-06-25 | Tdk株式会社 | 磁気抵抗効果素子、磁気抵抗効果装置および磁気センサ |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5021736A (en) * | 1989-09-19 | 1991-06-04 | Texas Instruments Incorporated | Speed/position sensor calibration method with angular adjustment of a magnetoresistive element |
| EP0704061A1 (en) * | 1994-04-15 | 1996-04-03 | Koninklijke Philips Electronics N.V. | A magnetic field sensor, an instrument comprising such a sensor and a method of manufacturing such a sensor |
| WO1996007926A1 (en) * | 1994-08-28 | 1996-03-14 | Philips Electronics N.V. | Magnetic field detector device |
| US5712612A (en) * | 1996-01-02 | 1998-01-27 | Hewlett-Packard Company | Tunneling ferrimagnetic magnetoresistive sensor |
-
1997
- 1997-11-13 DE DE69736463T patent/DE69736463T2/de not_active Expired - Fee Related
- 1997-11-13 WO PCT/IB1997/001438 patent/WO1998025155A2/en not_active Ceased
- 1997-11-13 EP EP97910581A patent/EP0880711B1/en not_active Expired - Lifetime
- 1997-11-13 JP JP10525393A patent/JP2000504430A/ja not_active Ceased
- 1997-11-25 US US08/977,983 patent/US6075361A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE69736463T2 (de) | 2007-04-19 |
| EP0880711A2 (en) | 1998-12-02 |
| EP0880711B1 (en) | 2006-08-09 |
| DE69736463D1 (de) | 2006-09-21 |
| WO1998025155A3 (en) | 1998-10-01 |
| US6075361A (en) | 2000-06-13 |
| WO1998025155A2 (en) | 1998-06-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20041110 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20041110 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20080401 |
|
| A045 | Written measure of dismissal of application [lapsed due to lack of payment] |
Free format text: JAPANESE INTERMEDIATE CODE: A045 Effective date: 20080826 |