JP2000355798A - Substrate plating device - Google Patents
Substrate plating deviceInfo
- Publication number
- JP2000355798A JP2000355798A JP11167926A JP16792699A JP2000355798A JP 2000355798 A JP2000355798 A JP 2000355798A JP 11167926 A JP11167926 A JP 11167926A JP 16792699 A JP16792699 A JP 16792699A JP 2000355798 A JP2000355798 A JP 2000355798A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- plating solution
- wafer
- current value
- plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体ウエハ、液
晶表示用ガラス基板、フォトマスク用ガラス基板、光デ
ィスク用ガラス基板などの基板に銅電解メッキ液などの
メッキ液を供給してメッキ処理を行う基板メッキ装置に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention performs plating by supplying a plating solution such as a copper electrolytic plating solution to a substrate such as a semiconductor wafer, a glass substrate for a liquid crystal display, a glass substrate for a photomask, and a glass substrate for an optical disk. The present invention relates to a substrate plating apparatus.
【０００２】[0002]
【従来の技術】従来のこの種の基板メッキ装置として、
例えば、特開平１−２９４８８８号公報に示すようなも
のが提案されている。2. Description of the Related Art As a conventional substrate plating apparatus of this kind,
For example, one disclosed in Japanese Patent Application Laid-Open No. 1-298888 has been proposed.
【０００３】この公報に開示された従来の基板メッキ装
置は、図５に示すように、メッキ層を形成する処理面Ｗ
Ｆを上方に向けてウエハＷを静止状態で保持するステー
ジ２００やステージ２００に保持されたウエハＷの処理
面ＷＦに対して電気的に接続する陰電極（カソードコン
タクト部）２１０、ステージ２００に保持されたウエハ
Ｗの上部に電解メッキ液を貯溜するカップ部２２０、カ
ップ部２２０に貯溜された電解メッキ液に浸漬され、ス
テージ２００に保持されたウエハＷの処理面ＷＦに対向
配置される陽電極（アノード）２３０、カップ部２２０
に電解メッキ液を供給するための電解メッキ液の貯溜タ
ンク２４１や、ポンプ２４２、供給管２４３などを有す
る電解メッキ液供給機構２４０、陽電極２３０から陰電
極２１０へ向けて電流が流れるようにに給電する電源２
５０などを備えている。なお、図５中の符号２６０は、
カップ部２２０内にウエハＷの搬入・搬出の際に用いる
上下方向に昇降のみ可能な押し上げ台を示している。As shown in FIG. 5, the conventional substrate plating apparatus disclosed in this publication employs a processing surface W on which a plating layer is formed.
The stage 200 for holding the wafer W in a stationary state with F facing upward, the negative electrode (cathode contact portion) 210 electrically connected to the processing surface WF of the wafer W held on the stage 200, and held on the stage 200 A cup portion 220 for storing an electrolytic plating solution above the wafer W, and a positive electrode immersed in the electrolytic plating solution stored in the cup portion 220 and arranged to face the processing surface WF of the wafer W held on the stage 200 (Anode) 230, cup 220
And an electrolytic plating solution supply mechanism 240 having a pump 242, a supply pipe 243, and the like, so that a current flows from the positive electrode 230 to the negative electrode 210. Power supply 2 for power supply
50 and the like. Note that reference numeral 260 in FIG.
A push-up table that can only be moved up and down in the vertical direction is used when loading and unloading wafers W into and from the cup section 220.
【０００４】この従来の基板メッキ装置による電解メッ
キ処理は、処理面ＷＦを上方に向けてウエハＷをステー
ジ２００に保持した状態で、カップ部２２０内に収容
し、ウエハＷが静止保持された状態でカップ部２２０内
に電解メッキ液を供給しつつ、カップ部２２０の上部か
ら電解メッキ液をオーバーフローで排出することで、カ
ップ部２２０内に貯溜される電解メッキ液を入れ替えな
がら、陽電極２３０と陰電極２１０との間を給電するこ
とで行われている。[0004] In the electroplating process using this conventional substrate plating apparatus, the wafer W is housed in a cup portion 220 with the processing surface WF facing upward and held on the stage 200, and the wafer W is held stationary. By supplying the electrolytic plating solution into the cup portion 220 and discharging the electrolytic plating solution from the upper portion of the cup portion 220 by overflow, the electrolytic plating solution stored in the cup portion 220 is replaced, and the positive electrode 230 and the positive electrode 230 are exchanged. Power is supplied to the negative electrode 210.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、この従
来の基板メッキ装置では、カップ２２０内への電解メッ
キ液の供給してから、陽電極２３０と陰電極２１０との
間の給電を行っていたので、電解メッキ液が供給されは
じめて給電までの時間が長いと、図６（ａ）に示すよう
に、ウエハの処理面の絶縁膜表面に形成されたシード層
がエッチングされることがある。シード層がエッチング
された状態でメッキ処理を行ってしまうと、図６（ｂ）
に示すように、メッキの析出が阻害されてしまう結果、
ボイドが発生して半導体装置の歩留まりを著しく低下さ
せるという問題がある。そのため、カップ２２０内を急
速に電解メッキ液で充填させる必要があり、カップ２２
０やメッキ槽そのものの構成を複雑にするという問題が
ある。However, in this conventional substrate plating apparatus, power is supplied between the positive electrode 230 and the negative electrode 210 after supplying the electrolytic plating solution into the cup 220. If the time from when the electrolytic plating solution is supplied to when the power is supplied is long, the seed layer formed on the insulating film surface on the processing surface of the wafer may be etched as shown in FIG. If the plating process is performed in a state where the seed layer is etched, FIG.
As shown in the figure, as a result that plating deposition is inhibited,
There is a problem that voids are generated and the yield of semiconductor devices is significantly reduced. Therefore, it is necessary to rapidly fill the inside of the cup 220 with the electrolytic plating solution.
There is a problem in that the configuration of the plating bath and the plating bath itself is complicated.
【０００６】本発明は、かかる事情に鑑みてなされたも
のであって、基板の処理面におけるボイドの発生を防止
する基板メッキ装置を提供することを目的とする。The present invention has been made in view of such circumstances, and has as its object to provide a substrate plating apparatus that prevents generation of voids on a processing surface of a substrate.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するため
に、本発明は、基板にメッキ処理を行う基板メッキ装置
であって、基板を保持する基板保持手段と、前記基板保
持手段に保持された基板にメッキ液を供給するためのメ
ッキ液供給手段と、前記基板保持手段に保持された基板
の処理面の上方において基板の処理面に対向して配置さ
れた第１の電極と、前記基板保持手段に保持された基板
に電気的に接続された第２の電極と、前記第１の電極と
前記第２の電極との間で電流が流れるように給電する給
電手段と、前記メッキ液供給手段からメッキ液を供給し
て基板にメッキ処理を行う際に、前記給電手段に第１の
電流値で給電させた後、前記第１の電流値より高い第２
の電流値で給電をさせる制御手段と、を備えたことを特
徴とする。なお、第１の電極としては陽電極、第２の電
極としては院電極が考えられる。To achieve the above object, the present invention provides a substrate plating apparatus for plating a substrate, comprising: a substrate holding means for holding a substrate; A plating solution supply unit for supplying a plating solution to the substrate, a first electrode disposed above the processing surface of the substrate held by the substrate holding unit and opposed to the processing surface of the substrate, A second electrode electrically connected to the substrate held by the holding means; a power supply means for supplying power so that a current flows between the first electrode and the second electrode; When a plating solution is supplied from the means to perform a plating process on the substrate, the power supply means is supplied with a first current value, and then a second current higher than the first current value is supplied.
And control means for supplying power at the current value. The first electrode may be a positive electrode, and the second electrode may be a hospital electrode.
【０００８】また、本発明は、前記基板保持手段に保持
された基板を上方から覆うカップと、前記カップ内にお
いて上側空間と下側空間とを形成するように前記カップ
内に設けられ、かつ前記上側空間から前記下側空間へメ
ッキ液を通すための複数の孔を有する板状部材と、をさ
らに備え、前記メッキ液供給手段は、前記上側空間にメ
ッキ液を供給し、前記第１の電極は、前記上側空間に設
けられ、前記制御手段は、基板にメッキ処理を行う際
に、前記給電手段によって第１の電流値で給電させ、前
記下側空間がメッキ液で充填された後、前記第１の電流
値より高い第２の電流値で給電させることを特徴とす
る。Further, the present invention provides a cup for covering a substrate held by the substrate holding means from above, and provided in the cup so as to form an upper space and a lower space in the cup, A plate-shaped member having a plurality of holes for allowing a plating solution to pass from the upper space to the lower space, wherein the plating solution supply means supplies a plating solution to the upper space, and the first electrode Is provided in the upper space, the control means, when performing a plating process on the substrate, the power supply means to supply power at a first current value, after the lower space is filled with a plating solution, Power is supplied at a second current value higher than the first current value.
【０００９】また、本発明は、前記下側空間がメッキ液
で充填させるたことを検知する検知手段をさらに備えた
ことを特徴とする。The present invention is further characterized by further comprising a detecting means for detecting that the lower space is filled with a plating solution.
【００１０】また、本発明は、前記検知手段が、前記下
側空間内のメッキ液の液面を検出する液面検出手段を備
えたことを特徴とする。Further, the invention is characterized in that the detecting means includes a liquid level detecting means for detecting a liquid level of the plating solution in the lower space.
【００１１】また、本発明は、前記カップが、前記基板
保持手段に対して開閉可能であり、前記制御手段が、前
記メッキ液供給手段によって前記上側空間にメッキ液を
供給して前記上側空間をメッキ液で充填させた状態で、
前記カップによって前記基板保持手段に保持された基板
を覆ったときに、前記給電手段によって第１の電流値の
給電を開始させることを特徴とする。Further, according to the present invention, the cup is openable and closable with respect to the substrate holding means, and the control means supplies a plating solution to the upper space by the plating solution supply means, thereby opening the upper space. In the state filled with plating solution,
When the substrate held by the substrate holding means is covered by the cup, power supply of the first current value is started by the power supply means.
【００１２】[0012]
【発明の実施の形態】以下、図面を参照して本発明の一
実施の形態を説明する。図１は、本発明の第１の実施の
形態に係る基板メッキ装置の全体構成を示す図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing an overall configuration of a substrate plating apparatus according to a first embodiment of the present invention.
【００１３】この基板メッキ装置は、メッキ層を形成す
る処理面ＷＦを上方に向けて基板の一種であるウエハＷ
を保持する保持機構１を備えている。In this substrate plating apparatus, a processing surface WF on which a plating layer is to be formed faces upward, and a wafer
Is provided.
【００１４】この保持機構１は、モータ２に連動連結さ
れており、鉛直方向の軸芯周りで回転される回転軸３の
上部にウエハＷよりも大径の円板状のベース部材４が一
体回転可能に連結され、ベース部材４の上面周辺部にウ
エハＷの周縁部を保持する保持部材５が３つ以上設けら
れれている。The holding mechanism 1 is connected to a motor 2 in an interlocking manner. A disc-shaped base member 4 having a diameter larger than that of the wafer W is integrally formed on a rotating shaft 3 rotated about a vertical axis. Three or more holding members 5 that are rotatably connected and hold the peripheral portion of the wafer W around the upper surface of the base member 4 are provided.
【００１５】ベース部材４は、導電性の材料で形成され
ている。このベース部材４に設けられた回転軸３との連
結部４ａには、給電ブラシ６によって、保持機構１の回
転中でもブラシ給電されるようになっている。なお、回
転軸３は絶縁部３ａによって上部と下部とが電気的に絶
縁されており、給電ブラシ６からの給電がモータ２に影
響しないように構成されている。The base member 4 is formed of a conductive material. A power supply brush 6 supplies power to the connecting portion 4 a of the base member 4 that connects to the rotating shaft 3 even during rotation of the holding mechanism 1. The upper and lower portions of the rotating shaft 3 are electrically insulated by an insulating portion 3a, so that power supply from the power supply brush 6 does not affect the motor 2.
【００１６】各保持部材５は、鉛直方向の軸芯周りで回
転可能であり、この軸芯から離れた外周部にウエハＷを
係止するための凹部５ａが形成されている。また、各保
持部材５は凹部５ａの天井面側に設けられた第２の電極
である陰電極７だけが給電ブラシ６と導通するようにな
っており、ウエハＷが各保持部材５に係止されて保持さ
れると、ウエハＷの処理面ＷＦと陰電極７とが電気的に
接続されてウエハＷの処理面ＷＦだけに通電される。Each holding member 5 is rotatable around a vertical axis, and a concave portion 5a for locking the wafer W is formed in an outer peripheral portion away from the axis. Further, in each holding member 5, only the negative electrode 7, which is the second electrode provided on the ceiling surface side of the concave portion 5a, is electrically connected to the power supply brush 6, and the wafer W is locked to each holding member 5. Then, the processing surface WF of the wafer W and the negative electrode 7 are electrically connected and only the processing surface WF of the wafer W is energized.
【００１７】保持機構１は、第１昇降機構８によって上
下方向に昇降可能である。この第１昇降機構８は、ボー
ルネジなどで構成される周知の１軸方向駆動機構によっ
て実現されている。The holding mechanism 1 can be moved up and down by a first lifting mechanism 8. The first elevating mechanism 8 is realized by a well-known one-axis driving mechanism including a ball screw or the like.
【００１８】保持機構１の上方には、下方が開口され、
保持機構１の上部を覆う有蓋円筒状の上部カップ１０が
設けられている。この上部カップ１０も周知の１軸方向
駆動機構によって実現された第２昇降機構１１によって
上下方向に昇降可能である。第１昇降機構８、第２昇降
機構１１によって保持機構１と上部カップ１０とが近接
され、保持機構１のベース部材４の上面と上部カップ１
０の下端部とが閉じ合わされることにより、保持機構１
に保持されたウエハＷの上部に電解メッキ液を貯溜する
メッキ処理空間１２が形成される。このメッキ処理空間
１２には、後述する板状部材に相当する仕切り板２２に
よって上側空間１２ａと下側空間１２ｂとが形成され
る。Above the holding mechanism 1, a lower part is opened,
A cylindrical upper cup 10 that covers the upper part of the holding mechanism 1 is provided. The upper cup 10 can also be moved up and down by a second elevating mechanism 11 realized by a well-known uniaxial drive mechanism. The holding mechanism 1 and the upper cup 10 are brought close to each other by the first lifting mechanism 8 and the second lifting mechanism 11, and the upper surface of the base member 4 of the holding mechanism 1 and the upper cup 1
0 is closed with the lower end of the holding mechanism 1.
A plating processing space 12 for storing an electrolytic plating solution is formed above the wafer W held in the substrate. An upper space 12a and a lower space 12b are formed in the plating space 12 by a partition plate 22 corresponding to a plate-like member described later.
【００１９】なお、上部カップ１０の下端部にはシール
部材１３が設けられ、電解メッキ処理を行うための銅メ
ッキ液などの電解メッキ液を下側空間１２ｂに充填する
際に、ベース部材４の上面と上部カップ１０の下端部と
の接合部分から電解メッキ液が漏れ出ないようになって
いる。A seal member 13 is provided at the lower end of the upper cup 10, and when the lower space 12b is filled with an electrolytic plating solution such as a copper plating solution for performing an electrolytic plating process, the base member 4 is sealed. The electrolytic plating solution is prevented from leaking from the joint between the upper surface and the lower end of the upper cup 10.
【００２０】上部カップ１０内には、保持機構１に保持
されたウエハＷの処理面ＷＦに対向して配置されるよう
に円板状の第１の電極である陽電極１４が配設されてい
る。この陽電極１４の周囲には、０．５μｍ程度の濾過
性能を有するフィルタＦが装着されている。なお、フィ
ルタＦの代わりにイオン交換膜などの電解メッキ液を通
過させる透過膜でもよい。In the upper cup 10, a positive electrode 14, which is a disk-shaped first electrode, is disposed so as to face the processing surface WF of the wafer W held by the holding mechanism 1. I have. Around the positive electrode 14, a filter F having a filtering performance of about 0.5 μm is mounted. Instead of the filter F, a permeable membrane such as an ion exchange membrane through which an electrolytic plating solution passes may be used.
【００２１】給電ブラシ６は、電源ユニット１５の陰極
側に接続され、陽電極１４は電源ユニット１５の陽極側
に接続されている。したがって、ウエハＷの処理面ＷＦ
は、陰電極７だけがベース部材４と導通させる導電部
（図示省略）、ベース部材４、連結部４ａ、給電ブラシ
６、導線１６を介して陰極となり、陽電極１４は、導線
１７を介して陽極となるように給電される。The power supply brush 6 is connected to the cathode side of the power supply unit 15, and the positive electrode 14 is connected to the anode side of the power supply unit 15. Therefore, the processing surface WF of the wafer W
The negative electrode 7 serves as a cathode through a conductive part (not shown) for conducting only with the base member 4, the base member 4, the connecting part 4 a, the power supply brush 6, and the conducting wire 16, and the positive electrode 14 via the conducting wire 17. Power is supplied to be the anode.
【００２２】また、以下のような構成により陽電極１４
の周りの電解メッキ液を保持するための電解メッキ液保
持機構２０が設けられている。The positive electrode 14 has the following structure.
There is provided an electrolytic plating solution holding mechanism 20 for holding the electrolytic plating solution around.
【００２３】すなわち、まず上部カップ１０内には、陽
電極１４の下方に位置させて複数の微小開口孔２１が形
成された仕切り板２２が設けられ、この仕切り板２２
と、陽電極１４の側方及び上方を囲う上部カップ１０の
側壁及び天井面とによって上側空間１２ａが形成され、
この上側空間１２ａ内に陽電極１４が収容された状態に
する。That is, first, a partition plate 22 having a plurality of minute openings 21 formed therein is provided below the positive electrode 14 in the upper cup 10.
And an upper space 12a formed by the side wall and the ceiling surface of the upper cup 10 surrounding the side and the upper side of the positive electrode 14,
The positive electrode 14 is housed in the upper space 12a.
【００２４】また、上部カップ１０の天井部分に電解メ
ッキ液の供給口２３を設け、この供給口２３から、ま
ず、上側空間１２ａに電解メッキ液が供給される。次
に、仕切り板２２に形成された微小開口孔２１から下側
空間１２ｂ内へ電解メッキ液を供給させる。Further, a supply port 23 for the electrolytic plating solution is provided in the ceiling portion of the upper cup 10, and the electrolytic plating solution is first supplied from the supply port 23 to the upper space 12a. Next, an electrolytic plating solution is supplied into the lower space 12b from the minute opening holes 21 formed in the partition plate 22.
【００２５】このような構成にすることによって、電解
メッキ処理を終えて上側空間１２ａへの電解メッキ液の
供給を停止するとともに、下側空間１２ｂ内の電解メッ
キ液を排出しても、電解メッキ液の表面張力により、上
側空間１２ａの電解メッキ液が仕切り板２２に形成され
た微小開口孔２１から下方に排出されることが防止さ
れ、陽電極１４が上側空間１２ａの電解メッキ液内に浸
漬された状態を常時維持することができる。With this configuration, the supply of the electrolytic plating solution to the upper space 12a is stopped after the electrolytic plating process is completed, and the electrolytic plating solution in the lower space 12b is discharged. The surface tension of the solution prevents the electrolytic plating solution in the upper space 12a from being discharged downward from the minute opening holes 21 formed in the partition plate 22, and the positive electrode 14 is immersed in the electrolytic plating solution in the upper space 12a. This state can always be maintained.
【００２６】なお、仕切り板２２に形成する微小開口孔
２１の孔径は、上側空間１２ａ内の電解メッキ液が微小
開口孔２１から下方に排出されないような電解メッキ液
の表面張力が得られる孔径とし、電解メッキ液の粘度や
仕切り板２２の材質などに応じて設定される。The diameter of the fine opening hole 21 formed in the partition plate 22 is a hole diameter at which the surface tension of the electrolytic plating solution is obtained such that the electrolytic plating solution in the upper space 12a is not discharged downward from the small opening hole 21. Is set according to the viscosity of the electrolytic plating solution, the material of the partition plate 22, and the like.
【００２７】上部カップ１０の天井面には、上側空間１
２ａ内と大気と連通させて、上側空間１２ａ内に電解メ
ッキ液を供給できるようにするためにエア抜き部２４が
設けられている。An upper space 1 is provided on the ceiling surface of the upper cup 10.
An air vent 24 is provided to allow the inside of the upper space 12a to be supplied with the electrolytic plating solution by communicating with the inside of the space 2a and the atmosphere.
【００２８】上部カップ１０の天井部分に設けられた電
解メッキ液の供給口２３には、以下のような電解メッキ
液供給機構３０により電解メッキ液が供給されるように
なっている。The electrolytic plating solution is supplied to an electrolytic plating solution supply port 23 provided on the ceiling portion of the upper cup 10 by the following electrolytic plating solution supply mechanism 30.
【００２９】すなわち、供給口２３は、貯溜タンク３１
内の電解メッキ液Ｑを供給する供給管３２が接続されて
いる。供給管３２には、貯溜タンク３１内の電解メッキ
液Ｑを送液するポンプ３３、及び開閉弁３４が設けられ
ているとともに、供給管３２の途中には、帰還管３５が
分岐されている。帰還管３５の先端は貯溜タンク３１に
接続され、帰還管３５の途中には開閉弁３６が設けられ
ている。That is, the supply port 23 is connected to the storage tank 31
A supply pipe 32 for supplying the electrolytic plating solution Q in the inside is connected. The supply pipe 32 is provided with a pump 33 for sending the electrolytic plating solution Q in the storage tank 31 and an on-off valve 34, and a return pipe 35 is branched in the supply pipe 32. The end of the return pipe 35 is connected to the storage tank 31, and an on-off valve 36 is provided in the middle of the return pipe 35.
【００３０】基板メッキ装置を稼動している際には、常
時ポンプ３３を駆動させている。上側空間１２ａに電解
メッキ液Ｑを供給するときには、開閉弁３４を開、開閉
弁３６を閉に切り換えて、供給口２３に電解メッキ液Ｑ
をすぐに供給できるようにしている。なお、供給管３２
の一部と帰還管３５とを介した電解メッキ液Ｑの循環中
に図示しない温度調整機構により電解メッキ液Ｑの温度
を所定温度範囲に維持するように温調したり、図示しな
い濃度調整機構により電解メッキ液Ｑの濃度を所定濃度
範囲に維持するようにしてもよい。When the substrate plating apparatus is operating, the pump 33 is constantly driven. When supplying the electrolytic plating solution Q to the upper space 12a, the on-off valve 34 is opened and the on-off valve 36 is switched to the closed state.
Are available immediately. The supply pipe 32
During the circulation of the electrolytic plating solution Q through a portion of the electroplating solution Q and the return pipe 35, the temperature of the electrolytic plating solution Q is controlled to be maintained in a predetermined temperature range by a temperature adjusting mechanism (not shown), or a concentration adjusting mechanism (not shown). Thus, the concentration of the electrolytic plating solution Q may be maintained in a predetermined concentration range.
【００３１】貯溜タンク３１には液補充管３７や回収管
３８も接続されている。貯溜タンク３１内の電解メッキ
液Ｑの貯溜量が減少すると、図示しない液補充機構によ
って液補充管３７を介して電解メッキ液Ｑが貯溜タンク
３１に補充される。また、後述する液回収部４０に形成
された電解メッキ液回収部４１によって電解メッキ処理
中に回収された電解メッキ液Ｑは回収管３８を介して貯
溜タンク３１へ戻される。A liquid replenishing pipe 37 and a collecting pipe 38 are also connected to the storage tank 31. When the stored amount of the electroplating solution Q in the storage tank 31 decreases, the electroplating solution Q is replenished to the storage tank 31 via the solution replenishing pipe 37 by a replenishing mechanism (not shown). Further, the electrolytic plating solution Q recovered during the electrolytic plating process by the electrolytic plating solution recovery unit 41 formed in the solution recovery unit 40 described later is returned to the storage tank 31 via the recovery pipe 38.
【００３２】保持機構１の周囲には、電解メッキ液回収
部４１と洗浄液回収部４２とが形成されるとともに、電
解メッキ液回収部４１の回収口４３と洗浄液回収部４２
の回収口４４とが上下方向に設けられた液回収部４０が
固設されている。Around the holding mechanism 1, an electrolytic plating solution collecting section 41 and a cleaning liquid collecting section 42 are formed, and a collecting port 43 of the electrolytic plating liquid collecting section 41 and a cleaning liquid collecting section 42.
The liquid recovery part 40 provided with the recovery port 44 in the up and down direction is fixedly provided.
【００３３】この液回収部４０は、円筒状の内壁４５
と、円筒状の仕切り壁４６と、円筒状の外壁４７と、仕
切り壁４６の上部に設けられた傾斜部４８と、外壁４７
の上部に設けられた傾斜部４９とを備えている。内壁４
５と、仕切り壁４６及び傾斜部４８の内側面とによって
囲まれる空間が洗浄液回収部４２となり、仕切り壁４６
及び傾斜部４８の外側面と、外壁４７及び傾斜部４９と
によって囲まれる空間が電解メッキ液回収部４１となっ
ている。また、内壁４５の上端部と傾斜部４８の先端部
との間の開口が洗浄液回収部４２の回収口４４となり、
傾斜部４８の先端部と傾斜部４９の先端部との間の開口
が電解メッキ液回収部４１の回収口４３となっている。The liquid recovery section 40 has a cylindrical inner wall 45.
A cylindrical partition wall 46, a cylindrical outer wall 47, an inclined portion 48 provided above the partition wall 46, and an outer wall 47.
And an inclined portion 49 provided at the upper part of the. Inner wall 4
5 and the space surrounded by the partition wall 46 and the inner surface of the inclined portion 48 become the cleaning liquid collecting portion 42, and the partition wall 46.
The space surrounded by the outer surface of the inclined portion 48 and the outer wall 47 and the inclined portion 49 is the electrolytic plating solution recovery portion 41. Also, an opening between the upper end of the inner wall 45 and the tip of the inclined portion 48 becomes the recovery port 44 of the cleaning liquid recovery section 42,
The opening between the tip of the inclined part 48 and the tip of the inclined part 49 is the recovery port 43 of the electrolytic plating solution recovery part 41.
【００３４】電解メッキ処理時は、第１昇降機構８によ
って液回収部４０に対して保持機構１が昇降されて、液
回収部４０に形成されている電解メッキ液回収部４１の
回収口４３を保持機構１の周囲に位置させ、保持機構１
及び保持機構１によって保持されたウエハＷの回転に伴
って保持機構１及びウエハＷの周囲に飛散される電解メ
ッキ液Ｑが電解メッキ液回収部４１の回収口４３を介し
て傾斜部４９の内側面で受け止められ、電解メッキ液回
収部４１に回収される。なお、電解メッキ液回収部４１
の底部には、回収管３８に接続された液排出口５０が設
けられ、電解メッキ液回収部４１で回収された電解メッ
キ液Ｑは液排出口５０、回収管３８を介して貯溜タンク
３１へ戻される。At the time of the electrolytic plating process, the holding mechanism 1 is moved up and down with respect to the liquid collecting section 40 by the first elevating mechanism 8, and the collecting port 43 of the electrolytic plating liquid collecting section 41 formed in the liquid collecting section 40 is opened. It is located around the holding mechanism 1 and the holding mechanism 1
Then, the electrolytic plating solution Q scattered around the holding mechanism 1 and the wafer W with the rotation of the wafer W held by the holding mechanism 1 is formed in the inclined portion 49 through the recovery port 43 of the electrolytic plating solution recovery section 41. It is received by the side surface and collected by the electrolytic plating solution collecting section 41. The electrolytic plating solution recovery unit 41
A liquid discharge port 50 connected to a recovery pipe 38 is provided at the bottom of the tank. The electrolytic plating solution Q recovered by the electrolytic plating liquid recovery section 41 is supplied to the storage tank 31 via the liquid discharge port 50 and the recovery pipe 38. Will be returned.
【００３５】また、洗浄処理時と乾燥処理時とは、第１
昇降機構８によって液回収部４０に対して保持機構１が
昇降されて液回収部４０に形成された洗浄液回収部４２
の回収口４４を保持機構１の周囲に位置させ、保持機構
１及びウエハＷの回転に伴って保持機構１及びウエハＷ
の周囲に飛散される洗浄液が洗浄液回収部４２の回収口
４４を介して傾斜部４８の内側面で受け止められ、洗浄
液回収部４２で回収される。なお、洗浄液回収部４２の
底部には、廃棄管５１に接続された液排出口５２が設け
られ、洗浄液回収部４２で回収された洗浄液は液排出口
５２、廃棄管５１を介して廃棄される。The cleaning process and the drying process are performed in the first
The holding mechanism 1 is moved up and down with respect to the liquid collecting section 40 by the elevating mechanism 8 to form the cleaning liquid collecting section 42 formed in the liquid collecting section 40.
Of the holding mechanism 1 and the wafer W with the rotation of the holding mechanism 1 and the wafer W.
The cleaning liquid scattered around is collected by the cleaning liquid recovery unit 42 through the recovery port 44 of the cleaning liquid recovery unit 42 and received on the inner surface of the inclined part 48. In addition, a liquid outlet 52 connected to a waste pipe 51 is provided at the bottom of the cleaning liquid recovery unit 42, and the cleaning liquid collected by the cleaning liquid recovery unit 42 is disposed of through the liquid outlet 52 and the waste pipe 51. .
【００３６】保持機構１に保持されたウエハＷの上方で
あって、離間された保持機構１と上部カップ１０との間
の防滴位置に位置されて上方から保持機構１に保持され
たウエハＷへの電解メッキ液Ｑの滴下を防止する円板状
の防滴部材６０と、防滴位置とそこから外れた待機位置
（図１に示す防滴部材６０の位置）との間で防滴部材６
０を移動させる移動機構６１とを備えている。The wafer W held by the holding mechanism 1 from above is positioned above the wafer W held by the holding mechanism 1 and at a drip-proof position between the separated holding mechanism 1 and the upper cup 10. Between the disk-shaped drip-proof member 60 for preventing the electrolytic plating solution Q from dropping onto the drip-proof position and the standby position (the position of the drip-proof member 60 shown in FIG. 1) separated therefrom. 6
And a moving mechanism 61 for moving 0.
【００３７】防滴部材６０は、防滴位置に位置している
ときには水平姿勢をとり、待機位置に位置しているとき
には起立姿勢をとる。このような姿勢転換を伴う防滴部
材６０の移動を行う移動機構６１は、図２（ａ）に示す
ような構成で実現することができる。The drip-proof member 60 has a horizontal posture when it is located at the drip-proof position, and has an upright posture when it is at the standby position. The moving mechanism 61 that moves the drip-proof member 60 with such a change in posture can be realized with a configuration as shown in FIG.
【００３８】すなわち、固定フレームに取り付けられた
回転軸６２、６３に回転自在に連結された支持部材６
４、６５の基端部に防滴部材６０が支持されている。そ
して、支持部材６５の先端部には、エアシリンダ６６の
ロッド６７が連結されていて、エアシリンダ６６のロッ
ド６７を伸縮させることにより、図２（ｂ）に示すよう
に、姿勢転換を伴う防滴部材６０の移動が行われる。こ
のように防滴部材６０が待機位置に位置しているときは
起立姿勢をとるように構成したことにより、基板メッキ
装置のフットプリントを小さくすることができる。That is, the supporting member 6 rotatably connected to the rotating shafts 62 and 63 attached to the fixed frame.
The drip-proof member 60 is supported on the base end portions of the fourth and fourth members. A rod 67 of an air cylinder 66 is connected to the distal end of the support member 65. By expanding and contracting the rod 67 of the air cylinder 66, as shown in FIG. The movement of the drop member 60 is performed. As described above, when the drip-proof member 60 is located at the standby position, the drip-proof member 60 is configured to be in the upright posture, so that the footprint of the substrate plating apparatus can be reduced.
【００３９】防滴部材６０の下部には、保持機構１に保
持されたウエハＷに洗浄液を供給する洗浄液供給ノズル
７０が設けられている。洗浄液供給ノズル７０には、洗
浄液供給管７１を介して図示しない洗浄液供給源から洗
浄液が供給される。洗浄液供給ノズル７０からの洗浄液
の供給とその停止の切換えは、洗浄液供給管７１に設け
られた開閉弁７２の開閉によって行われる。A cleaning liquid supply nozzle 70 for supplying a cleaning liquid to the wafer W held by the holding mechanism 1 is provided below the drip-proof member 60. A cleaning liquid is supplied to the cleaning liquid supply nozzle 70 from a cleaning liquid supply source (not shown) via a cleaning liquid supply pipe 71. Switching between the supply of the cleaning liquid from the cleaning liquid supply nozzle 70 and the stop thereof is performed by opening and closing an on-off valve 72 provided in the cleaning liquid supply pipe 71.
【００４０】この基板メッキ装置の各部の制御は、図３
に示すような制御部８０によって行われる。この制御部
８０は、モータ２、第１昇降機構８、第２昇降機構１
１、電源ユニット１５、液面検出センサ１８、ポンプ３
３、開閉弁３４、開閉弁３６、開閉弁７２、及び移動機
構６１にそれぞれ接続されている。そして、この制御部
８０は、モータ２による保持機構１の回転制御、第１昇
降機構８による保持機構１の上下方向の昇降制御、第２
昇降機構１１による上部カップ１０の上下方向の昇降制
御、電源ユニット１５の給電制御、液面検出センサ１８
による下側空間１２ｂ内の電解メッキ液の検出制御、ポ
ンプ３３の駆動制御、開閉弁３４の開閉による電解メッ
キ液の供給とその停止の制御、開閉弁３６の開閉制御、
開閉弁７２の開閉による洗浄液の供給とその停止の制
御、及び移動機構６１による防滴部材６０の姿勢転換制
御とを行う。なお、この制御部８０は、ＣＰＵやメモリ
等を備えたコンピュータで構成されている。The control of each part of the substrate plating apparatus is shown in FIG.
This is performed by the control unit 80 as shown in FIG. The control unit 80 includes a motor 2, a first lifting mechanism 8, and a second lifting mechanism 1.
1, power supply unit 15, liquid level detection sensor 18, pump 3
3, the on-off valve 34, the on-off valve 36, the on-off valve 72, and the moving mechanism 61, respectively. The control unit 80 controls the rotation of the holding mechanism 1 by the motor 2, the vertical movement of the holding mechanism 1 by the first lifting mechanism 8, and the second
Vertical control of the upper cup 10 by the lifting mechanism 11, power supply control of the power supply unit 15, and a liquid level detection sensor 18.
Control of the electrolytic plating solution in the lower space 12b in the lower space 12b, drive control of the pump 33, supply and stop of the electrolytic plating solution by opening and closing of the on-off valve 34, opening and closing control of the on-off valve 36,
The control of supply and stop of the cleaning liquid by opening and closing the on-off valve 72 and the control of the posture change of the drip-proof member 60 by the moving mechanism 61 are performed. The control unit 80 is configured by a computer having a CPU, a memory, and the like.
【００４１】次に、本発明に係る基板処理装置の通電制
御について説明する。図４は、本発明に係る基板処理装
置の通電制御を示す図である。Next, control of energization of the substrate processing apparatus according to the present invention will be described. FIG. 4 is a diagram showing the energization control of the substrate processing apparatus according to the present invention.
【００４２】まず、開閉弁３４を開の状態にして、上側
空間１２ａを電解メッキ液で充填しておく。このとき、
ウエハＷは保持機構１に保持された状態であるととも
に、上部カップ１０と保持機構１とは離間した状態であ
る。次に、第１昇降機構８、第２昇降機構１１によって
保持機構１と上部カップ１０とが近接され、保持機構１
のベース部材４の上面と上部カップ１０の下端部とが閉
じ合わされ、微小開口孔２１を介して電解メッキ液が上
側空間１２ａから下側空間１２ｂへ流入する。このとき
に、制御部８０が電源ユニット１５を制御して第１の電
流値Ａ１（例えば、８インチのウエハを用いた場合、１
ｍＡ／ｃｍ2〜１０ｍＡ／ｃｍ2）を流して予備通電を開
始する（図４（ｂ）に示すｔ１時）。なお、電解メッキ
液の下側空間１２ｂへの流入量の増加に伴って、図４
（ａ）に示すように、陽電極１４とウエハＷとの間の電
流の抵抗値が減少している。First, the open / close valve 34 is opened, and the upper space 12a is filled with the electrolytic plating solution. At this time,
The wafer W is held by the holding mechanism 1, and the upper cup 10 and the holding mechanism 1 are separated from each other. Next, the holding mechanism 1 and the upper cup 10 are brought close to each other by the first lifting mechanism 8 and the second lifting mechanism 11,
The upper surface of the base member 4 and the lower end of the upper cup 10 are closed, and the electrolytic plating solution flows from the upper space 12a to the lower space 12b through the minute opening hole 21. At this time, the control unit 80 controls the power supply unit 15 to control the first current value A1 (for example, when an 8-inch wafer is used, 1
mA / cm 2 ~10mA / cm 2 ) to start the preliminary energization by flowing a time t1 shown in (Figure 4 (b)). It should be noted that, as the amount of inflow into the lower space 12b of the electrolytic plating solution increases, FIG.
As shown in (a), the resistance value of the current between the positive electrode 14 and the wafer W decreases.
【００４３】予備通電が所定の時間経過すると、下側空
間１２ｂが電解メッキ液で充填され、図４（ｂ）に示す
ｔ２時（ｔ１から約１５秒以内）に、液面検出センサ１
８は、下側空間１２ｂが電解メッキ液で充填されたこと
を検出し、この検出に基づいて制御部８０は、ｔ２時に
電源ユニット１５を制御して第１の電流値より高い第２
の電流値（例えば、８インチのウエハを用いた場合、１
０ｍＡ／ｃｍ2〜３０ｍＡ／ｃｍ2）で本通電を開始す
る。なお、図４（ｂ）のｔ２以降は、陽電極１４とウエ
ハＷとの間の電流の抵抗値は一定となる。After a predetermined time has elapsed from the pre-energization, the lower space 12b is filled with the electrolytic plating solution, and at time t2 (within about 15 seconds from t1) shown in FIG.
8 detects that the lower space 12b has been filled with the electrolytic plating solution, and based on this detection, the control unit 80 controls the power supply unit 15 at t2 to increase the second current higher than the first current value.
Current value (for example, when an 8-inch wafer is used, 1
0mA / cm 2 ~30mA / cm 2 ) to start the energization in. Note that after t2 in FIG. 4B, the resistance value of the current between the positive electrode 14 and the wafer W becomes constant.
【００４４】その後、制御部８０は、第１昇降機構８、
第２移動機構１によって保持機構１と上部カップ１０と
を離間させ、モータ２を制御して保持機構１を回転さ
せ、保持機構Ｗ及びウエハＷの回転に伴って、ウエハＷ
に対する本格的な電解メッキ処理が行われる。Thereafter, the control unit 80 controls the first lifting mechanism 8,
The holding mechanism 1 is separated from the upper cup 10 by the second moving mechanism 1, the motor 2 is controlled to rotate the holding mechanism 1, and the wafer W is rotated with the rotation of the holding mechanism W and the wafer W.
Is subjected to full-scale electrolytic plating.
【００４５】以上の構成より明らかなように、この発明
の一実施の態様によれば以下のような効果が得られる。As is apparent from the above configuration, the following effects can be obtained according to the embodiment of the present invention.
【００４６】一旦供給口２３からに電解メッキ液が供給
された後、仕切り板２２に形成された微小開口孔２１を
介して上側空間１２ａから下側空間１２ｂへ電解メッキ
液を供給し、保持機構１に保持されたウエハＷの処理面
ＷＦに供給しているので、電解メッキ液の銅イオンの濃
度などの影響を受けることはなく、電解メッキ液を充分
に分散してウエハＷの処理面ＷＦに電解メッキ液を供給
できる。また、仕切り板２２は、陽電極１４と保持機構
１に保持されたウエハＷとの間に設けられているので、
この仕切り板２２で電流のショートパスを防止でき、電
流密度を均一にすることができる。その結果、ウエハＷ
の処理面ＷＦに均一な膜厚のメッキ層を形成することが
できる。After the electrolytic plating solution is once supplied from the supply port 23, the electrolytic plating solution is supplied from the upper space 12a to the lower space 12b through the minute opening holes 21 formed in the partition plate 22, and the holding mechanism is provided. Since the liquid is supplied to the processing surface WF of the wafer W held at 1, it is not affected by the concentration of copper ions in the electrolytic plating solution and the electrolytic plating solution is sufficiently dispersed and the processing surface WF of the wafer W is dispersed. Can be supplied with an electrolytic plating solution. Further, since the partition plate 22 is provided between the positive electrode 14 and the wafer W held by the holding mechanism 1,
This partition plate 22 can prevent a short path of current, and can make the current density uniform. As a result, the wafer W
A plated layer having a uniform thickness can be formed on the treated surface WF.
【００４７】また、陽電極１４にフィルタまたはイオン
交換膜などのような透過膜を装着しているので、陽電極
１４の溶解物であるスライムがウエハＷの処理面ＷＦに
供給されるのを防止することができる。したがって、ウ
エハＷの処理面ＷＦにスライムの付着、もしくは陽電極
１４に吸着している電解メッキ液中の添加剤等の一時的
な大量離脱が原因の離脱成分の付着による膜質の悪化を
防止することができる。Since a filter or a permeable membrane such as an ion exchange membrane is mounted on the positive electrode 14, slime, which is a dissolved substance of the positive electrode 14, is prevented from being supplied to the processing surface WF of the wafer W. can do. Therefore, it is possible to prevent the slime from adhering to the processing surface WF of the wafer W or the deterioration of the film quality due to the attachment of detached components due to the temporary large detachment of additives and the like in the electrolytic plating solution adsorbed on the positive electrode 14. be able to.
【００４８】また、保持機構１及び保持機構１によって
保持されたウエハＷを回転させながら電解メッキ処理を
行うので、ウエハＷの回転によって、ウエハＷの処理面
ＷＦ上のウエハＷの中心から周囲へ向かう電解メッキ液
Ｑの流れが形成され、保持機構１に保持されたウエハＷ
の処理面ＷＦ上に形成される境界層が薄く、かつ均一に
することができ、ウエハＷの処理面ＷＦにメッキ層形成
イオンが移動し易くなり、ウエハＷの処理面ＷＦへのメ
ッキ層形成イオンの移動を均一化できる。したがって、
メッキ層の形成に要する時間を短縮できるとともに、均
一なメッキ層をウエハＷの処理面ＷＦに形成することが
できる。Since the electrolytic plating is performed while rotating the holding mechanism 1 and the wafer W held by the holding mechanism 1, the rotation of the wafer W causes the center of the wafer W on the processing surface WF of the wafer W to move from the center to the periphery. A flow of the electrolytic plating solution Q is formed, and the wafer W held by the holding mechanism 1 is formed.
The boundary layer formed on the processing surface WF of the wafer W can be thin and uniform, and the plating layer forming ions can easily move to the processing surface WF of the wafer W, and the plating layer can be formed on the processing surface WF of the wafer W. The movement of ions can be made uniform. Therefore,
The time required for forming the plating layer can be reduced, and a uniform plating layer can be formed on the processing surface WF of the wafer W.
【００４９】また、電解メッキ処理を行う際に、電解メ
ッキ液が上側空間１２ａから下側空間１２ｂへ流入して
から（図４に示すｔ１時）、制御部８０が電源ユニット
１５を制御して第１の電流値Ａ１を流して予備通電を開
始し、下側空間１２ｂが電解メッキ液で充填された後
に、制御部８０は、ｔ２時に電源ユニット１５を制御し
て第１の電流値Ａ１より高い第２の電流値Ａ２で本通電
を開始し、ウエハＷに対する本格的な電解メッキ処理を
行っている。その結果、従来の技術のように、シード層
が電解メッキ液でエッチングされることもなく、メッキ
の析出が阻害されてボイドが発生して半導体装置の歩留
まりを著しく低下させるという問題を解決することがで
きる。When the electrolytic plating process is performed, the controller 80 controls the power supply unit 15 after the electrolytic plating solution flows from the upper space 12a to the lower space 12b (at time t1 shown in FIG. 4). After the first current value A1 is supplied to start the preliminary energization and the lower space 12b is filled with the electrolytic plating solution, the control unit 80 controls the power supply unit 15 at t2 to increase the first current value A1. Main energization is started at a high second current value A2, and full-scale electrolytic plating of the wafer W is performed. As a result, it is possible to solve the problem that the seed layer is not etched by the electrolytic plating solution as in the related art, the deposition of plating is inhibited, and voids are generated, thereby significantly reducing the yield of the semiconductor device. Can be.
【００５０】図４（ｂ）に示すｔ２時、すなわち、下側
空間１２ｂが電解メッキ液で充填された時、液面検出セ
ンサ１８は、下側空間１２ｂが電解メッキ液で充填され
たことを検出し、この検出に基づいて制御部８０は、ｔ
２時に電源ユニット１５を制御して第１の電流値Ａ１よ
り高い第２の電流値Ａ２の電流値で本通電を開始し、そ
れによってウエハＷに対する本格的な電解メッキ処理が
行われる。その結果、第１の電流値Ａ１から第２の電流
値Ａ２への切り換えを確実に行うことができる。At time t2 shown in FIG. 4B, that is, when the lower space 12b is filled with the electrolytic plating solution, the liquid level detection sensor 18 determines that the lower space 12b is filled with the electrolytic plating solution. And based on this detection, the control unit 80
At 2:00, the power supply unit 15 is controlled to start the main energization at a current value of the second current value A2 higher than the first current value A1, whereby the full-scale electrolytic plating process on the wafer W is performed. As a result, switching from the first current value A1 to the second current value A2 can be reliably performed.
【００５１】なお、上記発明の実施の形態では、図４
（ｂ）において第１の電流値Ａ１と第２の電流値Ａ２と
のいったように２段階で電流値を切り換える内容を説明
したが、第１の電流値Ａ１から第２の電流値Ａ２に切り
換える前に、複数段階で電流値を切り換えるようにして
もよい。In the embodiment of the present invention, FIG.
In (b), the content of switching the current value in two steps, such as the first current value A1 and the second current value A2, has been described, but the first current value A1 is changed to the second current value A2. Before switching, the current value may be switched in a plurality of stages.
【００５２】[0052]
【発明の効果】以上説明したように本発明によれば、基
板にメッキ処理を行う際に、給電手段に第１の電流値で
給電させ、下側空間がメッキ液で充填された後、第１の
電流値より高い第２の電流値で給電させているので、シ
ード層がエッチングされることもなく、ボイドの発生を
防止できる。As described above, according to the present invention, when a plating process is performed on a substrate, a power supply unit is supplied with a first current value, and after the lower space is filled with a plating solution, Since the power is supplied at the second current value higher than the current value of 1, the seed layer is not etched, and the generation of voids can be prevented.
【００５３】また、本発明によれば、メッキ液供給手段
からメッキ液を供給して基板にメッキ処理をする際に、
給電手段に第１の電流値で給電させた後、前記第１の電
流値より高い第２の電流値で給電をさせているので、シ
ード層がエッチングされることもなく、ボイドの発生を
防止できる。Further, according to the present invention, when the plating solution is supplied from the plating solution supply means and the substrate is plated,
Since the power is supplied to the power supply unit at the first current value and then to the second current value higher than the first current value, the seed layer is not etched and the generation of voids is prevented. it can.
【図１】本発明の一実施の形態に係る基板処理装置の全
体構成を示す図である。FIG. 1 is a diagram illustrating an overall configuration of a substrate processing apparatus according to an embodiment of the present invention.
【図２】移動機構を示す図である。FIG. 2 is a diagram showing a moving mechanism.
【図３】本発明の一実施の形態に係る基板処理装置の制
御系を示す図である。FIG. 3 is a diagram showing a control system of the substrate processing apparatus according to one embodiment of the present invention.
【図４】本発明の一実施の形態に係る基板処理装置の通
電制御を示す図である。FIG. 4 is a diagram showing the energization control of the substrate processing apparatus according to one embodiment of the present invention.
【図５】従来の基板メッキ装置の概略構成図である。FIG. 5 is a schematic configuration diagram of a conventional substrate plating apparatus.
【図６】従来の基板メッキ装置の問題点を説明する図で
ある。FIG. 6 is a diagram illustrating a problem of a conventional substrate plating apparatus.
１ 保持機構 ４ ベース部材 ５ 保持部材 ６ 給電ブラシ ７ 陰電極 １０ 上部カップ １２ メッキ処理空間 １２ａ 上側空間 １２ｂ 下側空間 １４ 陽電極 １５ 電源ユニット １６ 導線 １７ 導線 １８ 液面検出センサ ２０ メッキ液保持空間 ２３ 供給口 ８０ 制御部 Ｗ ウエハ ＷＦ 処理面 Ａ１ 第１の電流値 Ａ２ 第２の電流値 DESCRIPTION OF SYMBOLS 1 Holding mechanism 4 Base member 5 Holding member 6 Power supply brush 7 Negative electrode 10 Upper cup 12 Plating processing space 12a Upper space 12b Lower space 14 Positive electrode 15 Power supply unit 16 Conductor 17 Conductor 18 Liquid level detection sensor 20 Plating solution holding space 23 Supply port 80 Control unit W Wafer WF Processing surface A1 First current value A2 Second current value
フロントページの続き (72)発明者 松原 英明 京都市上京区堀川通寺之内上る４丁目天神 北町１番地の１ 大日本スクリーン製造株 式会社内 Ｆターム(参考） 4M104 DD52 HH20 Continued on the front page (72) Inventor Hideaki Matsubara 4-chome Tenjin Kitamachi 1-chome, Horikawa-dori-Terauchi, Kamigyo-ku, Kyoto F-term (reference) 4M104 DD52 HH20
Claims (5)
あって、 基板を保持する基板保持手段と、 前記基板保持手段に保持された基板にメッキ液を供給す
るためのメッキ液供給手段と、 前記基板保持手段に保持された基板の処理面の上方にお
いて基板の処理面に対向して配置された第１の電極と、 前記基板保持手段に保持された基板に電気的に接続され
た第２の電極と、 前記第１の電極と前記第２の電極との間で電流が流れる
ように給電する給電手段と、 前記メッキ液供給手段からメッキ液を供給して基板にメ
ッキ処理を行う際に、前記給電手段に第１の電流値で給
電させた後、前記第１の電流値より高い第２の電流値で
給電をさせる制御手段と、を備えたことを特徴とする基
板メッキ装置。1. A substrate plating apparatus for performing plating on a substrate, comprising: substrate holding means for holding the substrate; plating solution supply means for supplying a plating solution to the substrate held by the substrate holding means; A first electrode disposed above the processing surface of the substrate held by the substrate holding means and opposed to the processing surface of the substrate; and a second electrode electrically connected to the substrate held by the substrate holding means. And a power supply unit for supplying power so that a current flows between the first electrode and the second electrode; and supplying a plating solution from the plating solution supply unit to perform plating on a substrate. Control means for causing the power supply means to supply power at a first current value and then supplying power at a second current value higher than the first current value.
て、 前記基板保持手段に保持された基板を上方から覆うカッ
プと、 前記カップ内において上側空間と下側空間とを形成する
ように前記カップ内に設けられ、かつ前記上側空間から
前記下側空間へメッキ液を通すための複数の孔を有する
板状部材と、をさらに備え前記メッキ液供給手段は、前
記上側空間にメッキ液を供給し、 前記第１の電極は、前記上側空間に設けられ、 前記制御手段は、基板にメッキ処理を行う際に、前記給
電手段によって第１の電流値で給電させ、前記下側空間
がメッキ液で充填された後、前記第１の電流値より高い
第２の電流値で給電させることを特徴とする基板メッキ
装置。2. The substrate plating apparatus according to claim 1, wherein a cup that covers the substrate held by the substrate holding means from above, and an upper space and a lower space are formed in the cup. A plate-like member provided in the cup, and having a plurality of holes for passing a plating solution from the upper space to the lower space, the plating solution supply means further comprises: The first electrode is provided in the upper space, and the control means causes the power supply means to supply power at a first current value when plating the substrate, and the lower space is plated. A substrate plating apparatus characterized in that after filling with a liquid, power is supplied at a second current value higher than the first current value.
て、 前記下側空間がメッキ液で充填されたことを検知する検
知手段をさらに備えたことを特徴とする基板メッキ装
置。3. The substrate plating apparatus according to claim 2, further comprising detecting means for detecting that the lower space is filled with a plating solution.
て、 前記検知手段は、前記下側空間内のメッキ液の液面を検
出する液面検出手段を備えたことを特徴とする基板メッ
キ装置4. The substrate plating apparatus according to claim 3, wherein said detecting means includes a liquid level detecting means for detecting a liquid level of a plating liquid in said lower space. Plating equipment
基板メッキ装置であって、 前記カップは、前記基板保持手段に対して開閉可能であ
り、 前記制御手段は、前記メッキ液供給手段によって前記上
側空間にメッキ液を供給して前記上側空間をメッキ液で
充填させた状態で、前記カップによって前記基板保持手
段に保持された基板を覆ったときに、前記給電手段によ
って第１の電流値の給電を開始させることを特徴とする
基板メッキ装置。5. The substrate plating apparatus according to claim 2, wherein said cup is openable and closable with respect to said substrate holding means, and said control means supplies said plating solution. In a state where the plating solution is supplied to the upper space by the means and the upper space is filled with the plating solution, when the substrate held by the substrate holding means is covered by the cup, the first power is supplied by the power supply means. A substrate plating apparatus characterized by starting supply of a current value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16792699A JP3856986B2 (en) | 1999-06-15 | 1999-06-15 | Board plating equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16792699A JP3856986B2 (en) | 1999-06-15 | 1999-06-15 | Board plating equipment |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003370286A Division JP3987480B2 (en) | 2003-10-30 | 2003-10-30 | Substrate plating apparatus and substrate plating method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000355798A true JP2000355798A (en) | 2000-12-26 |
| JP2000355798A5 JP2000355798A5 (en) | 2004-10-28 |
| JP3856986B2 JP3856986B2 (en) | 2006-12-13 |
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ID=15858630
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
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| Country | Link |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100544911B1 (en) * | 2002-12-19 | 2006-01-24 | 다이닛뽕스크린 세이조오 가부시키가이샤 | Plating apparatus and plating method |
| WO2011033916A1 (en) * | 2009-09-17 | 2011-03-24 | 東京エレクトロン株式会社 | Film-forming method and storage medium |
| US20190043741A1 (en) * | 2017-08-04 | 2019-02-07 | Semes Co., Ltd. | Substrate processing apparatus and substrate processing method |
-
1999
- 1999-06-15 JP JP16792699A patent/JP3856986B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100544911B1 (en) * | 2002-12-19 | 2006-01-24 | 다이닛뽕스크린 세이조오 가부시키가이샤 | Plating apparatus and plating method |
| WO2011033916A1 (en) * | 2009-09-17 | 2011-03-24 | 東京エレクトロン株式会社 | Film-forming method and storage medium |
| US20190043741A1 (en) * | 2017-08-04 | 2019-02-07 | Semes Co., Ltd. | Substrate processing apparatus and substrate processing method |
| US10964557B2 (en) * | 2017-08-04 | 2021-03-30 | Semes Co., Ltd. | Substrate processing apparatus and substrate processing method |
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| Publication number | Publication date |
|---|---|
| JP3856986B2 (en) | 2006-12-13 |
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