JP3987480B2 - Substrate plating apparatus and substrate plating method - Google Patents

Description

The present invention relates to a substrate plating apparatus and a substrate plating process for supplying a plating solution such as a copper electrolytic plating solution to a substrate such as a semiconductor wafer, a glass substrate for liquid crystal display, a glass substrate for photomask, and a glass substrate for optical disk. Regarding the method .

  As a conventional substrate plating apparatus of this type, for example, the one shown in Patent Document 1 has been proposed.

  As shown in FIG. 5, the conventional substrate plating apparatus disclosed in this publication is held by a stage 200 or a stage 200 that holds the wafer W in a stationary state with the processing surface WF for forming a plating layer facing upward. A negative electrode (cathode contact portion) 210 electrically connected to the processing surface WF of the wafer W, a cup portion 220 for storing an electrolytic plating solution on the upper portion of the wafer W held on the stage 200, and a cup portion 220. Electrolytic plating solution storage tank for supplying the electrolytic plating solution to the positive electrode (anode) 230 and the cup portion 220, which are immersed in the electrolytic plating solution and disposed opposite to the processing surface WF of the wafer W held on the stage 200. 241, an electrolytic plating solution supply mechanism 240 having a pump 242, a supply pipe 243, and the like, and a current flows from the positive electrode 230 to the negative electrode 210. And a like power 250 to urchin feed. Note that reference numeral 260 in FIG. 5 indicates a push-up stand that can be moved up and down in the vertical direction used when the wafer W is loaded into and unloaded from the cup portion 220.

  In the electrolytic plating process by this conventional substrate plating apparatus, the wafer W is accommodated in the cup part 220 with the processing surface WF facing upward and held in the stage 200, and the cup part is held in a state where the wafer W is held stationary. While supplying the electrolytic plating solution into 220, the electrolytic plating solution is discharged from the upper part of the cup part 220 by overflow, so that the positive electrode 230 and the negative electrode 210 are exchanged while replacing the electrolytic plating solution stored in the cup part 220. This is done by supplying power between the two.

JP-A-1-294888

  However, in this conventional substrate plating apparatus, since the electrolytic plating solution is supplied into the cup 220 and then power is supplied between the positive electrode 230 and the negative electrode 210, the electrolytic plating solution is not supplied until the power supply starts. If this time is long, the seed layer formed on the insulating film surface of the processing surface of the wafer may be etched as shown in FIG. If the plating process is performed in a state where the seed layer is etched, as shown in FIG. 6B, the deposition of the plating is hindered. As a result, voids are generated and the yield of the semiconductor device is significantly reduced. There's a problem. Therefore, it is necessary to rapidly fill the inside of the cup 220 with the electrolytic plating solution, and there is a problem that the configuration of the cup 220 and the plating tank itself is complicated.

The present invention has been made in view of such circumstances, and an object of the present invention is to provide a substrate plating apparatus and a substrate plating method that prevent the generation of voids on the processing surface of the substrate.

In order to solve the above-mentioned problems, the invention of claim 1 is a substrate plating apparatus for performing a plating process on a substrate, a substrate holding means for holding the substrate, and plating for supplying a plating solution to the substrate held by the substrate holding means. A liquid supply unit; a first electrode disposed opposite to a processing surface of the substrate held by the substrate holding unit; and a second electrode electrically connected to the substrate held by the substrate holding unit And a power supply means for supplying power so that a current flows between the first electrode and the second electrode, and when the plating solution is supplied from the plating solution supply means to perform the plating process on the substrate, The first electrode and the second electrode are fed with a first current value to start energization, and after a predetermined energization time has elapsed, a second current value higher than the first current value. Power supply control means for controlling the power supply means to supply power at It is equipped with a.

According to a second aspect of the present invention, in the substrate plating apparatus according to the first aspect of the present invention, the power supply control unit causes the power supply unit to supply power at a first current value, and then the first current value is The current value is switched to the second current value in a plurality of stages, and power is supplied at the second current value.
According to a third aspect of the present invention, there is provided a substrate plating method for performing a plating process on a substrate. When a plating solution is supplied to the substrate and the substrate is subjected to the plating process, the substrate is disposed so as to face the processing surface of the substrate. A first current value is fed between a first electrode and a second electrode electrically connected to the substrate to start energization, and after a predetermined energization time has elapsed, the first current value Power is supplied at a higher second current value.
According to a fourth aspect of the present invention, in the substrate plating method according to the third aspect of the present invention, after the first current is supplied between the first electrode and the second electrode at a first current value, the first The current value is switched from the current value to the second current value in a plurality of stages, and power is supplied at the second current value.

According to the invention of claim 1 and claim 3, when performing the plating process on a substrate by supplying a plating solution, and feeding in the first current value between the first electrode and the second electrode Since energization is started and power is supplied at a second current value higher than the first current value after a predetermined energization time has elapsed , the seed layer is not etched, and generation of voids can be prevented. .

According to the invention of claim 2 and claim 4 , after supplying power with the first current value , the current value is switched from the first current value to the second current value in a plurality of stages, and the second current value is set. Therefore, the seed layer is not etched and generation of voids can be prevented.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a diagram showing an overall configuration of a substrate plating apparatus according to a first embodiment of the present invention.

  The substrate plating apparatus includes a holding mechanism 1 that holds a wafer W, which is a kind of substrate, with a processing surface WF on which a plating layer is formed facing upward.

  The holding mechanism 1 is linked to a motor 2 so that a disk-shaped base member 4 having a diameter larger than that of the wafer W can be integrally rotated on an upper portion of a rotating shaft 3 that is rotated around a vertical axis. Three or more holding members 5 that are connected and hold the peripheral edge of the wafer W are provided around the upper surface of the base member 4.

  The base member 4 is made of a conductive material. The power supply brush 6 supplies power to the connecting portion 4 a connected to the rotating shaft 3 provided on the base member 4 while the holding mechanism 1 is rotating. The rotating shaft 3 is configured so that the upper portion and the lower portion are electrically insulated by an insulating portion 3 a so that the power supply from the power supply brush 6 does not affect the motor 2.

  Each holding member 5 is rotatable around an axis in the vertical direction, and a recess 5a for locking the wafer W is formed on an outer peripheral part away from the axis. In addition, each holding member 5 is configured such that only the negative electrode 7 which is the second electrode provided on the ceiling surface side of the recess 5 a is electrically connected to the power supply brush 6, and the wafer W is locked to each holding member 5. When held, the processing surface WF of the wafer W and the negative electrode 7 are electrically connected, and only the processing surface WF of the wafer W is energized.

  The holding mechanism 1 can be moved up and down by the first lifting mechanism 8. The first elevating mechanism 8 is realized by a well-known uniaxial driving mechanism constituted by a ball screw or the like.

  Above the holding mechanism 1, there is provided a covered cup-shaped upper cup 10 that opens downward and covers the upper part of the holding mechanism 1. The upper cup 10 can also be moved up and down by a second lifting mechanism 11 realized by a well-known uniaxial driving mechanism. The holding mechanism 1 and the upper cup 10 are brought close to each other by the first elevating mechanism 8 and the second elevating mechanism 11, and the upper surface of the base member 4 of the holding mechanism 1 and the lower end portion of the upper cup 10 are closed to each other. A plating processing space 12 for storing the electrolytic plating solution is formed on the upper portion of the wafer W held by the semiconductor wafer 1. In the plating treatment space 12, an upper space 12a and a lower space 12b are formed by a partition plate 22 corresponding to a plate-like member described later.

  A seal member 13 is provided at the lower end portion of the upper cup 10, and the upper surface and the upper portion of the base member 4 are filled when the lower space 12 b is filled with an electrolytic plating solution such as a copper plating solution for performing an electrolytic plating process. The electrolytic plating solution is prevented from leaking from the joint portion with the lower end portion of the cup 10.

  In the upper cup 10, a positive electrode 14, which is a disc-shaped first electrode, is disposed so as to face the processing surface WF of the wafer W held by the holding mechanism 1. A filter F having a filtration performance of about 0.5 μm is mounted around the positive electrode 14. Instead of the filter F, a permeable membrane that allows an electrolytic plating solution such as an ion exchange membrane to pass therethrough may be used.

  The power supply brush 6 is connected to the cathode side of the power supply unit 15, and the positive electrode 14 is connected to the anode side of the power supply unit 15. Therefore, the processing surface WF of the wafer W becomes a cathode through a conductive portion (not shown) in which only the negative electrode 7 is electrically connected to the base member 4, the base member 4, the connecting portion 4 a, the power supply brush 6, and the conductive wire 16. 14 is fed via a conducting wire 17 so as to be an anode.

  In addition, an electrolytic plating solution holding mechanism 20 for holding the electrolytic plating solution around the positive electrode 14 is provided with the following configuration.

  That is, first, in the upper cup 10, a partition plate 22 is provided, which is positioned below the positive electrode 14 and formed with a plurality of minute apertures 21, and the partition plate 22 and the side and upper sides of the positive electrode 14 are provided. The upper space 12a is formed by the side wall and the ceiling surface of the upper cup 10 surrounding the upper cup 10, and the positive electrode 14 is accommodated in the upper space 12a.

  Further, an electrolytic plating solution supply port 23 is provided in the ceiling portion of the upper cup 10, and the electrolytic plating solution is first supplied from the supply port 23 to the upper space 12 a. Next, an electrolytic plating solution is supplied from the minute opening 21 formed in the partition plate 22 into the lower space 12b.

  By adopting such a configuration, the surface of the electrolytic plating solution is stopped even when the electrolytic plating treatment is finished and the supply of the electrolytic plating solution to the upper space 12a is stopped and the electrolytic plating solution in the lower space 12b is discharged. The state in which the electrolytic plating solution in the upper space 12a is prevented from being discharged downward from the minute opening hole 21 formed in the partition plate 22 due to the tension, and the positive electrode 14 is immersed in the electrolytic plating solution in the upper space 12a. Can be maintained at all times.

  The hole diameter of the minute opening hole 21 formed in the partition plate 22 is set to a hole diameter that can obtain the surface tension of the electrolytic plating solution so that the electrolytic plating solution in the upper space 12a is not discharged downward from the minute opening hole 21. It is set according to the viscosity of the liquid and the material of the partition plate 22.

  An air vent 24 is provided on the ceiling surface of the upper cup 10 so as to allow the inside of the upper space 12a to communicate with the atmosphere so that the electrolytic plating solution can be supplied into the upper space 12a.

  Electrolytic plating solution is supplied to an electrolytic plating solution supply port 23 provided in the ceiling portion of the upper cup 10 by an electrolytic plating solution supply mechanism 30 as described below.

  In other words, the supply port 23 is connected to a supply pipe 32 that supplies the electrolytic plating solution Q in the storage tank 31. The supply pipe 32 is provided with a pump 33 for sending the electrolytic plating solution Q in the storage tank 31 and an open / close valve 34, and a return pipe 35 is branched in the middle of the supply pipe 32. The tip of the return pipe 35 is connected to the storage tank 31, and an open / close valve 36 is provided in the middle of the return pipe 35.

  When the substrate plating apparatus is operating, the pump 33 is always driven. When supplying the electrolytic plating solution Q to the upper space 12a, the on-off valve 34 is opened and the on-off valve 36 is switched to close so that the electrolytic plating solution Q can be immediately supplied to the supply port 23. During the circulation of the electrolytic plating solution Q through a part of the supply pipe 32 and the return pipe 35, the temperature of the electrolytic plating solution Q is controlled to be maintained within a predetermined temperature range by a temperature adjusting mechanism (not shown). The concentration of the electroplating solution Q may be maintained within a predetermined concentration range by a concentration adjusting mechanism (not shown).

  A liquid replenishment pipe 37 and a recovery pipe 38 are also connected to the storage tank 31. When the storage amount of the electrolytic plating solution Q in the storage tank 31 decreases, the electrolytic plating solution Q is replenished to the storage tank 31 via the liquid replenishment pipe 37 by a liquid replenishment mechanism (not shown). In addition, the electrolytic plating solution Q recovered during the electrolytic plating process by the electrolytic plating solution recovery unit 41 formed in the liquid recovery unit 40 described later is returned to the storage tank 31 via the recovery pipe 38.

  An electrolytic plating solution recovery unit 41 and a cleaning solution recovery unit 42 are formed around the holding mechanism 1, and a recovery port 43 of the electroplating solution recovery unit 41 and a recovery port 44 of the cleaning solution recovery unit 42 are vertically arranged. The provided liquid recovery unit 40 is fixed.

  The liquid recovery unit 40 is provided on a cylindrical inner wall 45, a cylindrical partition wall 46, a cylindrical outer wall 47, an inclined part 48 provided on the upper part of the partition wall 46, and an upper part of the outer wall 47. And an inclined portion 49. The space surrounded by the inner wall 45 and the inner surface of the partition wall 46 and the inclined portion 48 becomes the cleaning liquid recovery portion 42, and the space surrounded by the outer surface of the partition wall 46 and the inclined portion 48, the outer wall 47 and the inclined portion 49. An electrolytic plating solution recovery unit 41 is provided. Further, the opening between the upper end of the inner wall 45 and the tip of the inclined portion 48 becomes the recovery port 44 of the cleaning liquid recovery portion 42, and the opening between the tip of the inclined portion 48 and the tip of the inclined portion 49 is electrolyzed. It is a collection port 43 of the plating solution collection unit 41.

  During the electrolytic plating process, the holding mechanism 1 is moved up and down with respect to the liquid recovery unit 40 by the first lifting mechanism 8, and the recovery port 43 of the electrolytic plating solution recovery unit 41 formed in the liquid recovery unit 40 is held in the holding mechanism 1. The electrolytic plating solution Q is scattered around the holding mechanism 1 and the wafer W as the wafer W held by the holding mechanism 1 and the holding mechanism 1 is rotated. It is received by the inner surface of the inclined portion 49 through 43 and is recovered by the electrolytic plating solution recovery portion 41. Note that a liquid discharge port 50 connected to the recovery pipe 38 is provided at the bottom of the electrolytic plating solution recovery unit 41, and the electrolytic plating solution Q recovered by the electrolytic plating solution recovery unit 41 is supplied to the liquid discharge port 50 and the recovery tube. It is returned to the storage tank 31 via 38.

  During the cleaning process and the drying process, the holding mechanism 1 is moved up and down with respect to the liquid recovery unit 40 by the first lifting mechanism 8 to hold the recovery port 44 of the cleaning liquid recovery unit 42 formed in the liquid recovery unit 40. The cleaning liquid that is positioned around the mechanism 1 and splashes around the holding mechanism 1 and the wafer W as the holding mechanism 1 and the wafer W rotate is connected to the inner surface of the inclined portion 48 through the recovery port 44 of the cleaning liquid recovery unit 42. And is collected by the cleaning liquid collecting unit 42. In addition, a liquid discharge port 52 connected to the disposal pipe 51 is provided at the bottom of the cleaning liquid collection unit 42, and the cleaning liquid collected by the cleaning liquid collection unit 42 is discarded through the liquid discharge port 52 and the disposal pipe 51. .

  Electrolysis of the wafer W held above the wafer W held by the holding mechanism 1 and positioned at a drip-proof position between the holding mechanism 1 and the upper cup 10 which are separated from each other and held by the holding mechanism 1 from above. The drip-proof member 60 is moved between the disc-shaped drip-proof member 60 that prevents the plating solution Q from dripping, and the drip-proof position and the standby position (the position of the drip-proof member 60 shown in FIG. 1) that deviates therefrom. And a moving mechanism 61 to be moved.

  The drip-proof member 60 takes a horizontal posture when positioned at the drip-proof position, and takes a standing posture when positioned at the standby position. The moving mechanism 61 that moves the drip-proof member 60 with such a posture change can be realized with the configuration shown in FIG.

  That is, the drip-proof member 60 is supported on the base end portions of the support members 64 and 65 that are rotatably connected to the rotation shafts 62 and 63 attached to the fixed frame. The rod 67 of the air cylinder 66 is connected to the tip of the support member 65. By extending and contracting the rod 67 of the air cylinder 66, as shown in FIG. The drop member 60 is moved. Thus, when the drip-proof member 60 is located at the standby position, the footprint of the substrate plating apparatus can be reduced by adopting the standing posture.

  Below the drip-proof member 60, a cleaning liquid supply nozzle 70 that supplies a cleaning liquid to the wafer W held by the holding mechanism 1 is provided. A cleaning liquid is supplied to the cleaning liquid supply nozzle 70 from a cleaning liquid supply source (not shown) via a cleaning liquid supply pipe 71. Switching between the supply of the cleaning liquid from the cleaning liquid supply nozzle 70 and the stop thereof is performed by opening and closing an on-off valve 72 provided in the cleaning liquid supply pipe 71.

  Control of each part of the substrate plating apparatus is performed by a control unit 80 as shown in FIG. The control unit 80 includes a motor 2, a first lifting mechanism 8, a second lifting mechanism 11, a power supply unit 15, a liquid level detection sensor 18, a pump 33, an opening / closing valve 34, an opening / closing valve 36, an opening / closing valve 72, and a moving mechanism 61. Are connected to each. And this control part 80 is the rotation control of the holding mechanism 1 by the motor 2, the vertical movement control of the holding mechanism 1 by the first lifting mechanism 8, the vertical movement control of the upper cup 10 by the second lifting mechanism 11, Power supply control of the power supply unit 15, detection control of the electroplating solution in the lower space 12 b by the liquid level detection sensor 18, drive control of the pump 33, control of supply and stop of the electroplating solution by opening and closing the on-off valve 34, opening and closing Control of opening and closing of the valve 36, supply of cleaning liquid by opening and closing of the opening and closing valve 72, control of stopping thereof, and posture change control of the drip-proof member 60 by the moving mechanism 61 are performed. The control unit 80 is constituted by a computer having a CPU, a memory, and the like.

  Next, energization control of the substrate processing apparatus according to the present invention will be described. FIG. 4 is a diagram showing energization control of the substrate processing apparatus according to the present invention.

First, the on-off valve 34 is opened, and the upper space 12a is filled with an electrolytic plating solution. At this time, the wafer W is held by the holding mechanism 1 and the upper cup 10 and the holding mechanism 1 are separated from each other. Next, the holding mechanism 1 and the upper cup 10 are brought close to each other by the first elevating mechanism 8 and the second elevating mechanism 11, and the upper surface of the base member 4 of the holding mechanism 1 and the lower end portion of the upper cup 10 are closed to each other. The electrolytic plating solution flows from the upper space 12a into the lower space 12b through the holes 21. At this time, the control unit 80 is the first current value and controls the power supply unit 15 A1 (e.g., when using an 8-inch ^{wafer, 1mA / cm 2 ~10mA / cm} 2) initiate a preliminary energization is flowed (At time t1 shown in FIG. 4B). As the amount of inflow into the lower space 12b of the electrolytic plating solution increases, the resistance value of the current between the positive electrode 14 and the wafer W decreases as shown in FIG.

When the pre-energization elapses for a predetermined time, the lower space 12b is filled with the electrolytic plating solution, and at t2 (within about 15 seconds from t1) shown in FIG. Based on this detection, the control unit 80 controls the power supply unit 15 to detect a second current value higher than the first current value (for example, 8 inches). when using the wafer to initiate the energization at ^{10mA / cm 2 ~30mA / cm 2} ). Note that the resistance value of the current between the positive electrode 14 and the wafer W is constant after t2 in FIG.

  Thereafter, the controller 80 separates the holding mechanism 1 and the upper cup 10 by the first elevating mechanism 8 and the second elevating mechanism 11, controls the motor 2 to rotate the holding mechanism 1, and holds the holding mechanism 1 and the wafer W. Along with this rotation, a full-scale electrolytic plating process is performed on the wafer W.

  As is apparent from the above configuration, according to one embodiment of the present invention, the following effects can be obtained.

  Once the electrolytic plating solution is supplied from the supply port 23, the electrolytic plating solution is supplied from the upper space 12 a to the lower space 12 b through the minute opening 21 formed in the partition plate 22 and is held by the holding mechanism 1. Since it is supplied to the processing surface WF of the wafer W, it is not affected by the concentration of copper ions in the electrolytic plating solution, and the electrolytic plating solution is sufficiently dispersed to be applied to the processing surface WF of the wafer W. Can supply. Further, since the partition plate 22 is provided between the positive electrode 14 and the wafer W held by the holding mechanism 1, the partition plate 22 can prevent a short-circuit current and make the current density uniform. Can do. As a result, a plating layer having a uniform thickness can be formed on the processing surface WF of the wafer W.

  Further, since a permeable membrane such as a filter or an ion exchange membrane is attached to the positive electrode 14, it is possible to prevent slime, which is a dissolved material of the positive electrode 14, from being supplied to the processing surface WF of the wafer W. it can. Therefore, the deterioration of the film quality due to the adhesion of the release component due to the adhesion of slime to the processing surface WF of the wafer W or the temporary large-scale separation of the additive in the electrolytic plating solution adsorbed to the positive electrode 14 is prevented. be able to.

  Further, since the electrolytic plating process is performed while rotating the holding mechanism 1 and the wafer W held by the holding mechanism 1, the electrolytic plating is performed from the center of the wafer W on the processing surface WF of the wafer W toward the periphery by the rotation of the wafer W. The boundary layer formed on the processing surface WF of the wafer W held by the holding mechanism 1 is formed thin and uniform, and a plating layer forming ion is formed on the processing surface WF of the wafer W. It becomes easy to move, and the movement of the plating layer forming ions to the processing surface WF of the wafer W can be made uniform. Therefore, the time required for forming the plating layer can be shortened, and a uniform plating layer can be formed on the processing surface WF of the wafer W.

  Further, when the electrolytic plating process is performed, after the electrolytic plating solution flows from the upper space 12a into the lower space 12b (at time t1 shown in FIG. 4), the control unit 80 controls the power supply unit 15 to perform the first operation. After the current value A1 is flown and preliminary energization is started and the lower space 12b is filled with the electrolytic plating solution, the control unit 80 controls the power supply unit 15 at t2 to set the second current higher than the first current value A1. The main energization is started at a current value of A2 and a full-scale electrolytic plating process is performed on the wafer W. As a result, unlike the prior art, the seed layer is not etched with the electrolytic plating solution, and the problem that the deposition of the plating is hindered and voids are generated to significantly reduce the yield of the semiconductor device is solved. Can do.

  At time t2 shown in FIG. 4B, that is, when the lower space 12b is filled with the electrolytic plating solution, the liquid level detection sensor 18 detects that the lower space 12b is filled with the electrolytic plating solution, Based on this detection, the control unit 80 controls the power supply unit 15 at t2 to start the main energization with the current value of the second current value A2 higher than the first current value A1, and thereby the full-scale operation for the wafer W is performed. An electrolytic plating process is performed. As a result, switching from the first current value A1 to the second current value A2 can be performed reliably.

  In the embodiment of the invention described above, the content of switching the current value in two stages such as the first current value A1 and the second current value A2 in FIG. 4B has been described. Prior to switching from A1 to the second current value A2, the current value may be switched in a plurality of stages.

1 is a diagram illustrating an overall configuration of a substrate processing apparatus according to an embodiment of the present invention. It is a figure which shows the moving mechanism of the substrate processing apparatus of FIG. It is a figure which shows the control system of the substrate processing apparatus of FIG. It is a figure which shows the electricity supply control of the substrate processing apparatus of FIG. It is a schematic block diagram of the conventional board | substrate plating apparatus. It is a figure explaining the problem of the conventional board | substrate plating apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Holding mechanism 4 Base member 5 Holding member 6 Power supply brush 7 Negative electrode 10 Upper cup 12 Plating process space 12a Upper space 12b Lower space 14 Positive electrode 15 Power supply unit 16 Conductor 17 Conductor 18 Liquid level detection sensor 20 Plating solution holding space 23 Supply port 80 Control unit W Wafer WF Processing surface A1 First current value A2 Second current value

Claims (4)

A substrate plating apparatus for performing plating on a substrate,
Substrate holding means for holding the substrate;
A plating solution supply means for supplying a plating solution to the substrate held by the substrate holding means;
A first electrode disposed to face the processing surface of the substrate held by the substrate holding means;
A second electrode electrically connected to the substrate held by the substrate holding means;
Power supply means for supplying power so that a current flows between the first electrode and the second electrode;
When the plating solution is supplied from the plating solution supply means to perform the plating process on the substrate, power supply is started at a first current value between the first electrode and the second electrode, and energization is started. Power supply control means for controlling the power supply means to supply power at a second current value higher than the first current value after a predetermined energization time has elapsed ;
A substrate plating apparatus comprising: The substrate plating apparatus according to claim 1,
The power supply control unit supplies power to the power supply unit with a first current value, and then switches the current value from the first current value to the second current value in a plurality of stages, and uses the second current value. A substrate plating apparatus characterized by feeding power. A substrate plating method for plating a substrate,
When the plating solution is supplied to the substrate and the substrate is plated, the first electrode disposed opposite to the processing surface of the substrate and the second electrode electrically connected to the substrate The substrate plating method according to claim 1, wherein energization is started by supplying power at a first current value, and power is supplied at a second current value higher than the first current value after a predetermined energization time has elapsed. The substrate plating method according to claim 3, wherein
After supplying power at a first current value between the first electrode and the second electrode, the current value is switched from the first current value to the second current value in a plurality of stages to change the second current value. A substrate plating method, wherein power is supplied at a current value of.

Images